(RE,Y)-123 SUPERCONDUCTING FILM CONTAINING MIXED ARTIFICIAL PINNING CENTERS AND PREPARATION METHOD THEREOF

Abstract

The invention relates to a (RE,Y)-123 superconducting film containing mixed artificial pinning centers and a preparation method thereof, wherein a stoichiometric ratio of Cu in a parent phase of the (RE,Y)-123 superconducting film is 3.05-5; the mixed artificial pinning centers include a perovskite structure BaMO3 and a double-perovskite structure oxide Ba2(RE,Y)NO6; and a total mole percentage of Ba2(RE,Y)NO6 in the superconducting film is not less than 2.5%. The mixed artificial pinning centers form well-aligned column structures along the thickness direction in the superconducting film. The invention is intended not only to solve the problem that a single secondary phase cannot be well aligned along the thickness direction of (RE,Y)-123 when using the high-speed pulsed laser deposition technique, but also to effectively overcome the film thickness effect of the (RE,Y)-123 superconducting film containing mixed artificial pinning centers, hence the in-field current carrying capacity of the superconducting film is significantly improved in industrialized high-speed production.

Claims

1. A (RE,Y)-123 superconducting film containing mixed artificial pinning centers, wherein a stoichiometric ratio of Cu in a parent phase of the (RE,Y)-123 superconducting film is 3.05 to 5; the mixed artificial pinning centers comprise a perovskite structure BaMO.sub.3 and a double-perovskite structure oxide Ba.sub.2(RE,Y)NO.sub.6; a total mole percentage of the double-perovskite structures oxide Ba.sub.2(RE,Y)NO.sub.6 in the superconducting film is not less than 2.5%; the mixed artificial pinning centers form well-aligned column structures along the thickness direction in the superconducting film.

2. The (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 1, wherein in the (RE,Y)-123 superconducting film, RE is a mixed rare earth consisting of one or more selected from Gd, Eu, and Sm.

3. The (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 1, wherein in the perovskite structure BaMO.sub.3, M is a mixed element consisting of one or more selected from Zr, Hf, and Sn; in the double-perovskite structure oxide Ba.sub.2(RE,Y)NO.sub.6, RE is a mixed rare earth consisting of one or more selected from Gd, Eu, and Sm, and N is a mixed element consisting of one or more selected from Nb and Ta.

4. The (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 1, wherein a total mole percentage of the mixed artificial pinning centers in the superconducting film is 5-20%.

5. A method for preparing the (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 1, comprising the steps of: S1, preparing a (RE,Y)-123 superconducting target containing mixed artificial pinning centers;

6. S2, selecting a buffered metallic tape with biaxial texture as a substrate; and S3, depositing the target in step S1 on the substrate in step S2 in situ by adopting a high-speed pulsed laser deposition technique to obtain the (RE,Y)-123 superconducting film containing mixed artificial pinning centers.

7. The method for preparing the (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 5, wherein in step S1, the target is a conformable metal oxide target and prepared by uniformly mixing the secondary phase BaMO.sub.3 and Ba.sub.2(RE,Y)NO.sub.6 powder and parent phase (RE,Y)-123 superconducting powder, pressing and sintering, and obtaining the (RE,Y)-123 superconducting target containing mixed artificial pinning centers after surface treatment.

8. The method for preparing the (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 5, wherein a density of the target reaches more than 90% of a theoretical density.

9. The method for preparing the (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 5, wherein in step S2, the metallic tape is a nickel-based or copper-based flexible metallic tape, the metallic tape is coated with a single-layer or multi-layers of oxide films, and s structure of the oxide film is one of CeO.sub.2/YSZ/Y.sub.2O.sub.3, MgO, LaMnO.sub.3/MgO/Y.sub.2O.sub.3/Al—O or CeO.sub.2/MgO/Y.sub.2O.sub.3/Al—O.

10. The method for preparing the (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 5, wherein in step S3, the superconducting film prepared by in-situ deposition grows at a growth rate higher than 20 nm/s. The method for preparing the (RE,Y)-123 superconducting film containing mixed artificial pinning centers according to claim 5, wherein in step S3, the superconducting film prepared by in-situ deposition has a thickness of more than 1 μm.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Other features, objects, and advantages of the present invention will become apparent from the following detailed description of non-limiting embodiments in conjunction with the accompanying drawings, in which:

[0022] FIG. 1 is a 2D X-ray diffraction pattern of a superconducting film prepared in Example 1;

[0023] FIG. 2 is a cross-sectional transmission electron microscopic (TEM) image of the superconducting film prepared in Example 1;

[0024] FIG. 3 is a cross-sectional TEM image of the superconducting film prepared in Comparative Example 1.

DETAILED DESCRIPTION OF THE INVENTION

[0025] The present invention will now be described in detail with reference to specific examples. The following examples will help those skilled in the art to further understand the invention, but are not intended to limit the invention in any way. It should be noted that several variations and modifications may be made by those skilled in the art without departing from the inventive concept. The variations and modifications are within the scope of the invention.

[0026] Mole percentages of the perovskite structure BaMO.sub.3 and the double-perovskite structure oxide Ba.sub.2(RE,Y)NO.sub.6 described in the following examples refer to the mole percentages thereof in the superconducting film.

Example 1

[0027] This Example related to a Gd—Ba—Cu—O (Gd-123) superconducting film containing mixed artificial pinning centers, wherein the mixed artificial pinning centers included a perovskite structure BaZrO.sub.3 and a double-perovskite structure oxide Ba.sub.2YNbO.sub.6, the mole percentage of BaZrO.sub.3 was 2%, the mole percentage of Ba.sub.2YNbO.sub.6 was 3%, and a stoichiometric ratio of Cu in a parent phase (RE,Y)-123 superconducting film was 3.05; the preparation method of the Gd—Ba—Cu—O (Gd-123) superconducting film containing mixed artificial pinning centers included the steps of:

(1) preparing a Gd-123 superconducting target containing two mixed artificial pinning centers: uniformly mixing 2% by mole of BaZrO.sub.3 and 3% by mole of Ba.sub.2YNbO.sub.6 powder with parent phase Gd-123 superconducting powder, pressing and sintering, and obtaining the Gd-123 superconducting target containing two mixed artificial pinning centers through surface treatment, wherein a density of the target reaches 90% of a theoretical density.
(2) selecting a metallic tape with a biaxially textured CeO.sub.2/MgO/Y.sub.2O.sub.3/Al—O buffer layer as a substrate; and
(3) depositing the target in step (1) on the substrate in step (2) in situ by adopting a high-speed pulsed laser deposition technique, at a growth rate of 20 nm/s, and obtaining the Gd-123 superconducting film containing mixed artificial pinning centers after deposition.
The superconducting film prepared by the method of Example 1 had a thickness of 2 μm, and the mixed artificial pinning centers BaZrO.sub.3 and Ba.sub.2YNbO.sub.6 could still achieve well-aligned column structures along the thickness direction in the superconducting film. The 2D X-ray diffraction pattern of the superconducting film was shown in FIG. 1, and the diffraction peaks of (101) crystal planes of BaZrO.sub.3 and Ba.sub.2YNbO.sub.6 indicated by arrows in the drawing showed that the mixed artificial pinning centers formed column structures along the thickness direction. A cross-sectional TEM image of the superconducting film was shown in FIG. 2, arrows indicated the distribution of columnar crystals with a column structure diameter of about 5 nm, and the superconducting film had an in-field current carrying density of 15 MA/cm.sup.2 at 30 K in 1 T field (B//the thickness di recti on).

Example 2

[0028] This Example related to a (Gd,Sm)—Ba—Cu—O (denoted as (Gd,Sm)-123) superconducting film containing mixed artificial pinning centers, wherein the mixed artificial pinning centers included a perovskite structure BaHfO.sub.3 and a double-perovskite structure oxide Ba.sub.2GdNbO.sub.6, the mole percentage of BaHfO.sub.3 was 4%, the mole percentage of Ba.sub.2GdNbO.sub.6 was 2.5%, and a stoichiometric ratio of Cu in a parent phase (RE,Y)-123 superconducting film was 3.5; the preparation method of the (Gd,Sm)-123 superconducting film containing mixed artificial pinning centers included the steps of:

(1) preparing a (Gd,Sm)-123 superconducting target containing two mixed artificial pinning centers: uniformly mixing 4% by mole of BaHfO.sub.3 and 2.5% by mole of Ba.sub.2GdNbO.sub.6 powder with parent phase (Gd,Sm)-123 superconducting powder, pressing and sintering, and obtaining the (Gd,Sm)-123 superconducting target containing two mixed artificial pinning centers through surface treatment, wherein a density of the target reaches 95% of a theoretical density.
(2) selecting a metallic tape with a biaxially textured MgO buffer layer as a substrate; and
(3) depositing the target in step (1) on the substrate in step (2) in situ by adopting a high-speed pulsed laser deposition technique, at a growth rate of 50 nm/s, and obtaining the (Gd,Sm)-123 superconducting film containing mixed artificial pinning centers after deposition.
The superconducting film prepared by the method of Example 2 had a thickness of 1 and the mixed artificial pinning centers BaZrO.sub.3 and Ba.sub.2YNbO.sub.6 could still achieve well-aligned column structures along the thickness direction in the superconducting film and the superconducting film had an in-field current carrying density of 13 MA/cm.sup.2 at 30 K in 1 T field (B//the thickness di recti on).

Example 3

[0029] This Example related to a Y—Ba—Cu—O (denoted as Y-123) superconducting film containing mixed artificial pinning centers, wherein the mixed artificial pinning centers included a perovskite structure BaSnO.sub.3 and a double-perovskite structure oxide Ba.sub.2GdTaO.sub.6, the mole percentage of BaSnO.sub.3 was 6%, the mole percentage of Ba.sub.2GdTaO.sub.6 was 6%, and a stoichiometric ratio of Cu in a parent phase (RE,Y)-123 superconducting film was 4; the preparation method of the Y-123 superconducting film containing mixed artificial pinning centers included the steps of:

(1) preparing a Y-123 superconducting target containing two mixed artificial pinning centers: uniformly mixing 6% by mole of BaSnO.sub.3 and 6% by mole of Ba.sub.2GdTaO.sub.6 powder with parent phase Y-123 superconducting powder, pressing and sintering, and obtaining the Y-123 superconducting target containing two mixed artificial pinning centers through surface treatment, wherein a density of the target reaches 92% of a theoretical density.
(2) selecting a metallic tape with a biaxially textured LaMnO.sub.3/MgO/Y.sub.2O.sub.3/Al—O buffer layer as a substrate; and
(3) depositing the target in step (1) on the substrate in step (2) in situ by adopting a high-speed pulsed laser deposition technique, at a growth rate of 25 nm/s, and obtaining the Y-123 superconducting film containing mixed artificial pinning centers after deposition.
The superconducting film prepared by the method of Example 2 had a thickness of 2.5 and the mixed artificial pinning centers BaSnO.sub.3 and Ba.sub.2YTaO.sub.6 could still achieve well-aligned column structures along the thickness direction in the superconducting film and the superconducting film had an in-field current carrying density of 16 MA/cm.sup.2 at 4.2 K in 10 T field (B//the thickness di recti on).

Example 4

[0030] This Example related to a (Eu,Gd)—Ba—Cu—O (denoted as (Eu,Gd)-123) superconducting film containing mixed artificial pinning centers, wherein the mixed artificial pinning centers included two perovskite structure BaZrO.sub.3 and BaSnO.sub.3 and two double-perovskite structure oxide Ba.sub.2YTaO.sub.6 and Ba.sub.2YNbO.sub.6, the mole percentage of BaSnO.sub.3, BaZrO.sub.3, Ba.sub.2YTaO.sub.6 and Ba.sub.2YNbO.sub.6 were 7%, 8%, 2.5% and 2.5%, respectively. The stoichiometric ratio of Cu in a parent phase (RE,Y)-123 superconducting film was 5; the preparation method of the (Eu,Gd)-123 superconducting film containing mixed artificial pinning centers included the steps of:

(1) preparing a (Eu,Gd)-123 superconducting target containing two mixed artificial pinning centers: uniformly mixing 7% by mole of BaSnO.sub.3, 8% by mole of BaZrO.sub.3, 2.5% by mole of Ba.sub.2YTaO.sub.6 and 2.5% by mole of Ba.sub.2YNbO.sub.6 powder with parent phase (Eu,Gd)-123 superconducting powder, pressing and sintering, and obtaining the (Eu,Gd)-123 superconducting target containing two mixed artificial pinning centers through surface treatment, wherein a density of the target reaches 97% of a theoretical density.
(2) selecting a metallic tape with a biaxially textured LaMnO.sub.3/MgO/Y.sub.2O.sub.3/Al—O buffer layer as a substrate; and
(3) depositing the target in step (1) on the substrate in step (2) in situ by adopting a high-speed pulsed laser deposition technique, at a growth rate of 25 nm/s, and obtaining the (Eu,Gd)-123 superconducting film containing mixed artificial pinning centers after deposition.

[0031] The superconducting film prepared by the method of Example 2 had a thickness of 2.5 μm, and the mixed artificial pinning centers BaSnO.sub.3, BaZrO.sub.3, Ba.sub.2YNbO.sub.6 and Ba.sub.2YTaO.sub.6 could still achieve well-aligned column structures along the thickness direction in the superconducting film and the superconducting film had an in-field current carrying density of 20 MA/cm.sup.2 at 4.2 K in 10 T field (B//the thickness direction).

Comparative Example 1

[0032] This Comparative Example related to a Gd—Ba—Cu—O superconducting film containing mixed artificial pinning centers, the method being substantially the same as in Example 1, except that in this Comparative Example, the mixed artificial pinning centers were BaZrO.sub.3 and Y.sub.2O.sub.3 with mole percentages of 2% and 3%, respectively.

[0033] The structures of the obtained superconducting film artificial pinning centers BaZrO.sub.3 and Y.sub.2O.sub.3 in the superconducting film were nano-dots, and could not achieve well-aligned column structures at a high growth rate. A cross-sectional TEM image of the superconducting film was shown in FIG. 3, it could be seen that the superconducting film had only nano-dots formed therein (with a diameter of 5 nm), without apparent column structures. The superconducting film had an in-field current carrying density of 2 MA/cm.sup.2 at 30 K in 1 T field (B//the thickness direction).

Comparative Example 2

[0034] This Comparative Example related to a Gd—Ba—Cu—O superconducting film containing mixed artificial pinning centers, the method being substantially the same as in Example 1, except that in this Comparative Example, the mixed artificial pinning centers only was BaZrO.sub.3 with mole percentages of 5%.

[0035] The structures of the obtained superconducting film artificial pinning centers BaZrO.sub.3 in the superconducting film was nano-dots, and could not achieve well-aligned column structures at a high growth rate. The superconducting film had an in-field current carrying density of 1.5 MA/cm.sup.2 at 30 K in 1 T field (B//the thickness direction).

Comparative Example 3

[0036] This Comparative Example related to a (Gd, Sm)—Ba—Cu—O superconducting film containing mixed artificial pinning centers, the method being substantially the same as in Example 2, except that in this Comparative Example, the stoichiometric ratio of Cu in a parent phase (Gd, Sm)—Ba—Cu—O superconducting film was 3.

[0037] The structures of the obtained superconducting film artificial pinning centers of BaHfO.sub.3 and Ba.sub.2GdNbO.sub.6 in the superconducting film were a mixture of nano-dots and column. The superconducting film had an in-field current carrying density of 4 MA/cm.sup.2 at 30 K in 1 T field (B//the thickness direction).

Comparative Example 4

[0038] This Comparative Example related to a Y—Ba—Cu—O superconducting film containing mixed artificial pinning centers, the method being substantially the same as in Example 3, except that in this Comparative Example, the mole percentages of Ba.sub.2GdTaO.sub.6 was 2%.

[0039] The structures of the obtained superconducting film artificial pinning centers of Ba.sub.2GdTaO.sub.6 in the superconducting film were a mixture of nano-dots and column. The superconducting film had an in-field current carrying density of 4 MA/cm.sup.2 at 4.2 K in 10 T field (B//the thickness direction).

[0040] Specific examples of the invention have been described above. It is to be understood that the invention is not limited to the particular examples described above, and that various changes and modifications may be made by one skilled in the art with the scope of the appended claims without departing from the spirit of the invention. Without conflicts, the examples of the present application and features of the examples may be combined randomly.