DEVICE AND METHOD FOR DEPOSITING THICK METAL NITRIDE COATINGS BY THE SUPERCRITICAL FLUID ROUTE

Abstract

A device for depositing a thick metal nitride on a sample by supercritical fluids includes a first enclosure forming a first closed volume; a second enclosure placed in the first enclosure and delimited by internal walls transparent to electromagnetic radiation forming a second closed volume intended to include fluid under supercritical conditions; a heat transfer dielectric fluid circulating in the first volume around the second enclosure; a sample holder present in the second volume; an induction heating device surrounding the second enclosure; inlets for introducing a fluid and at least one precursor material into the second enclosure, and an outlet to purge the second volume.

Claims

1. A device for depositing a metal nitride with a thickness greater than or equal to 1 .Math.m on a sample by supercritical fluids comprising: a first enclosure delimited by external walls forming a first closed volume; a second enclosure delimited by internal walls forming a second closed volume, the second enclosure being placed in the first enclosure and being intended to contain a fluid under supercritical conditions and the material of the internal walls being transparent to electromagnetic radiation; a heat transfer dielectric fluid circulating in the first closed volume around the second enclosure; a sample holder present in the second closed volume and configured to support the sample; an induction heating device placed in the first enclosure and surrounding the second enclosure so as to be able to heat the sample placed on the sample holder; an inlet configured to introduce a fluid into the second closed volume; an inlet configured to introduce at least one precursor material into the second closed volume, and at least one outlet configured to purge the second closed volume.

2. The metal nitride deposition device according to claim 1, wherein the material of the internal walls is a ceramic.

3. The metal nitride deposition device according to claim 1, wherein the first and second enclosures are closed by two covers made of 316L stainless steel.

4. A method for depositing a metal nitride with a thickness greater than or equal to 1 .Math.m on a sample by supercritical fluids implemented by the device according to claim 1 and comprising: placing the sample on the sample holder ; heating the sample by induction and heating the second closed volume by the dielectric heat transfer fluid ; introducing each precursor material and a fluid into the second closed volume so as to cause the precursor materials and the fluid to react under supercritical conditions to form metal nitride on a surface of the sample and to grow the metal nitride formed on the surface of the sample, and cooling then depressurizing the second closed volume.

5. The deposition method according to claim 4, wherein each precursor material and the fluid are introduced into the second closed volume when a temperature of the sample is greater than or equal to 100° C. and a temperature of the internal walls is greater than or equal to 70° C. throughout the a duration of metal nitride formation and growth on the surface of the sample.

6. The deposition method according to claim 4, wherein each precursor material and the fluid are introduced into the second closed volume when a temperature and a pressure in the second closed volume are greater than or equal, respectively, to the critical temperature and pressure of the supercritical fluid, no precursor material and supercritical fluid being introduced during the growth of the metal nitride on the surface of the sample.

7. The deposition method according to claim 4, wherein the sample is made of steel or is a metal alloy or is a conductive ceramic or is a conductive polymer.

8. The deposition method according to claim 4, wherein the precursor material is a titanium organometallic or a tantalum organometallic.

9. The deposition method according to claim 4, wherein the fluid introduced into the second closed volume comprises ammonia.

10. The deposition method according to claim 4 wherein a temperature of the internal walls is comprised between 90° C. and 200° C. during the formation and growth of the metal nitride on the surface of the sample.

11. The deposition method according to claim 4, wherein the sample is heated so as to reach a temperature comprised between 100° C. and 800° C. during the formation and growth of the metal nitride on its surface.

12. The deposition method according to claim 4, wherein, in the second closed volume, a temperature is comprised between 90° C. and 800° C. and a pressure is comprised between 10 MPa and 25 MPa during the formation and growth of metal nitride on the surface of the sample.

13. The deposition method according to claim 4, wherein, in the second closed volume, a temperature is comprised between 90° C. and 800° C. and a pressure is comprised between 1 MPa and 25 MPa during the formation and growth of metal nitride on the surface of the sample.

14. The deposition method according to claim 4, wherein a duration of the method is comprised between 1 min and 60 min.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Other features and advantages of the present invention will emerge from the description given below, with reference to the appended drawings which illustrate examples of embodiments without any limiting character.

[0041] FIG. 1 shows, schematically and partially, a sectional view of a deposition device according to the invention.

[0042] FIG. 2 schematically shows the steps of a deposition method according to one embodiment of the invention.

[0043] FIG. 3 schematically shows the steps of a deposition method according to one embodiment of the invention.

DESCRIPTION OF EMBODIMENTS

[0044] Throughout the description, a supercritical fluid or a fluid under supercritical conditions is a fluid under pressure and at temperature under supercritical conditions.

[0045] FIG. 1 schematically and partially shows a sectional view of a device according to the invention.

[0046] The device 100 allows to deposit a metal nitride coating on a sample 104. The device 100 comprises a first enclosure 110 delimited by external walls 101 and forming a first closed volume V1. It also comprises a second enclosure 120 delimited by internal walls 102 forming a second closed volume V2. The second enclosure 120 is included in the first enclosure 110.

[0047] A heat transfer fluid is placed in the first volume V1 and thus circulates around the second enclosure 120.

[0048] The second enclosure 120 is adapted to receive a supercritical fluid and to withstand temperatures and pressures higher than the critical temperature and pressure of the supercritical fluid.

[0049] The device 100 also comprises an inlet 150 to be able to introduce into the second volume V2 a fluid which will be the supercritical fluid and therefore will be subjected to supercritical pressure and temperature conditions. It also comprises an inlet 151 to be able to introduce precursor materials into this same volume V2.

[0050] An outlet 152 is also present in the device 100 to purge the second volume V2, and thus allow continuous operation of the deposition device 100.

[0051] A sample holder 105 is placed in the second enclosure 120 to support the sample 104 on which the coating is deposited. Preferably, the sample holder 105 is placed in the second enclosure 120 so that the sample 104 is held at the center of the inductor forming the induction heater 103. Preferably, the sample holder 105 has a shape allowing to support the sample 104 with a minimum of point of contact in order to coat the largest possible surface of the sample with the metal nitride coating deposited and to limit the disturbances in the convection flow of the induction. Preferably, the sample holder 105 is composed of a material limiting thermal losses, it is for example composed of a thermally and electrically nonconductive material.

[0052] An induction heater 103 is placed in the first enclosure 110 and surrounds the second enclosure 120. The induction heating allows to heat the sample 104 by limiting the heating of the precursor materials present in the second volume V2.

[0053] In order not to disturb the heating of the sample 104 by induction, the internal walls 102 are transparent to electromagnetic radiation. They are for example made of ceramic. The ceramics used can be boron nitride, aluminum nitride, alumina or silicon nitride. These examples of dense and non-porous ceramics allow the internal walls 102 to have excellent mechanical strength and thus to withstand the pressures present in the second volume V2.

[0054] In order not to degrade the yield of the induction, the heat transfer fluid present in the first volume V1 is dielectric. For example, the heat transfer fluid can be a synthetic oil, air or even nitrogen.

[0055] According to a particular feature of the invention, O-rings 130, 131, 132 and 133 may be present at the ends of the two enclosures 110 and 120 in order to guarantee the tightness of the two enclosures 110, 120. These seals 130 to 132 are, for example, made of ethylene-propylene-diene monomer (EPDM) or of Kalrez 6375.

[0056] According to another particular feature of the invention, covers 140 and 141 can be present at the ends of the two enclosures 110 and 120 in order to close them. Advantageously, only one of the two covers 140 and 141 is movable. The covers can for example be made of steel, and more particularly of 316L steel.

[0057] FIG. 2 represents the steps of a method for depositing a thick metal nitride coating according to one embodiment of the invention, in particular for depositing the coating in semi-continuous mode.

[0058] In a first step 201, the sample on which it is desired to form a metal nitride coating is placed in the second enclosure on the sample holder.

[0059] Then in the next step 202, the sample is heated by induction using the induction heating means. In this step, the second volume is also heated by means of the dielectric heat transfer fluid.

[0060] Then as soon as the temperature of the sample T.sub.sam reaches at least 100° C. and the temperature of the internal walls T.sub.wall reaches at least 70° C., the precursor materials and a fluid begin to be introduced into the second enclosure (step 203). The fluid introduced will then be subjected to supercritical conditions in the second enclosure.

[0061] During the introduction of the precursor materials and the fluid, the sample and the second volume continue to be heated by induction. This allows to reach in the vicinity of the sample the supercritical conditions necessary for the formation of the metal nitride on the surface of the sample of the introduced fluid.

[0062] The precursor materials and the introduced fluid therefore react under supercritical conditions to form, by chemical reaction of the seeds, metal nitride on the surface of the sample (step 204). Throughout the formation and growth of the metal nitride on the surface of the sample, the precursor materials and the fluid are introduced into the second enclosure. The formation of metal nitride on the surface of the sample thus takes place in semi-open or continuous mode. This allows the amounts of precursor materials and fluid to be adjusted as the metal nitride layer grows.

[0063] When the growth of the continuous layer of metal nitride is complete, that is to say when the thickness of metal nitride is reached, the second enclosure is cooled before depressurizing it (step 205).

[0064] FIG. 3 shows the steps of a method for depositing a thick metal nitride coating according to another embodiment of the invention, in particular for depositing the coating in closed mode.

[0065] In a first step 301, the sample on which it is desired to form a metal nitride coating is placed in the second enclosure on the sample holder.

[0066] Then in the next step 302, the sample is heated by induction using the induction heating means. In this step, the second volume is also heated by means of the dielectric heat transfer fluid.

[0067] As soon as the temperature and the pressure within the second enclosure (T, P).sub.2nd .sub.volume reach at least the critical temperature and pressure (T, P).sub.c of the fluid that is to be introduced, the precursor materials and the fluid which will thus be placed under supercritical conditions (step 303) are introduced in the second enclosure.

[0068] The precursor materials and the supercritical fluid will then react and form, by chemical reaction of seeds, metal nitride on the surface of the sample in order to form a continuous layer which will grow throughout the duration of the reaction. During this reaction step 304, no precursor material or fluid is added. The formation of metal nitride on the surface of the sample takes place in closed mode.

[0069] When the growth of the continuous layer of metal nitride is complete, that is to say when all the precursor materials have reacted, the second enclosure is cooled before depressurizing it (step 305).

[0070] Regardless of the embodiment, the sample can be made of steel, can be a metal alloy, or can be a conductive ceramic or a conductive polymer.

[0071] Regardless of the embodiment, the precursor material can be a halide or an organometallic. The precursor material may in particular be a titanium organometallic or a tantalum organometallic, for example tetrakis(dimethylamido) titanium TDMAT or tetrakis(diethylamido) titanium TDEAT. Thus, for example with a titanium organometallic as a precursor, a titanium nitride coating can be formed on the surface of the sample; or a tantalum nitride coating can be formed with a tantalum organometallic as the precursor material.

[0072] Regardless of the embodiment, the supercritical fluid, that is to say the fluid introduced into the second enclosure, may comprise ammonia, ethanol, methanol, carbon dioxide, dinitrogen, argon, alkanes, toluene or a mixture of these fluids. If the precursor material is TDMAT or TDEAT, ammonia will preferably be chosen as the supercritical fluid, because these precursors have good solubility in this medium and the reducing nature of ammonia allows to obtain the desired stoichiometry of the nitride.

[0073] In the case of the method described with reference to FIG. 3, if ammonia is chosen as the supercritical fluid, the precursor materials and the ammonia will be introduced into the second enclosure (step 303) when the temperature reaches at least 132.3° C. and the pressure 11.3 MPa, these thresholds corresponding to the critical temperature and pressure values of ammonia.

[0074] Regardless of the embodiment, the temperature of the internal walls can vary between 90° C. and 200° C. during the formation and growth of the metal nitride on the sample (step 204 or 304).

[0075] Regardless of the embodiment, the temperature of the sample can vary between 100° C. and 800° C. during the step 204 or 304.

[0076] Regardless of the embodiment, the temperature of the supercritical fluid, and therefore of the second volume, can vary in the vicinity of the sample between 90° C. and 800° C. during the step 204 or 304.

[0077] Regardless of the embodiment, the pressure in the second volume can vary between 1 MPa and 25 MPa, for example between 10 MPa and 25 MPa, during the step 204 or 304.

[0078] Regardless of the embodiment, the method of the invention can last between 1 min and 60 min, or even longer if necessary depending on the thickness of the desired metal nitride deposition.

[0079] Whether in semi-open or continuous mode (method described with reference to FIG. 2) or in closed mode (method described with reference to FIG. 3), the method according to the invention allows to obtain a continuous, dense and homogeneous metal nitride coating on the surface of the sample, the sample possibly having a complex three-dimensional geometry, that is to say non-planar.

[0080] The expression “comprised between ... and ...” must be understood as including the limits.