Optoelectronic Device and Method for Manufacturing the Same

Abstract

In an embodiment, an optoelectronic device includes a carrier, at least one optoelectronic semiconductor component arranged on an upper side of the carrier and at least one light channel associated with the optoelectronic semiconductor component which extends between a first end of the light channel which is distant from a light-active surface of the semiconductor component and which includes an opening into the outer space and a second end of the light channel including an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel includes a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.

Claims

1.-15. (canceled)

16. An optoelectronic device comprising: a carrier; at least one optoelectronic semiconductor component arranged on an upper side of the carrier; and at least one light channel associated with the optoelectronic semiconductor component which extends between a first end of the light channel which is distant from a light-active surface of the semiconductor component and which comprises an opening into an outer space, and a second end of the light channel comprising an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel comprises a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.

17. The optoelectronic device according to claim 16, wherein at least the section of the inner wall comprises a reflective or mirror coating.

18. The optoelectronic device according to claim 16, wherein at least two optoelectronic semiconductor components are arranged on the upper side of the carrier, each semiconductor component being associated with a respective, separate light channel whose opening located at the second end is directed onto the light-active surface of the semiconductor component and whose opening located at the first end is directed into the outer space.

19. The optoelectronic device according to claim 18, wherein the openings of the light channels directed into the outer space are directed in different directions.

20. The optoelectronic device according to claim 16, wherein the opening of the at least one light channel directed into the outer space comprises a cross-sectional area which does not run parallel to the light-active surface of the semiconductor component.

21. The optoelectronic device according to claim 16, wherein a plane extending through a cross-sectional area extends at an angle between 30° and 80° to a plane extending through the light-active surface of the semiconductor component.

22. The optoelectronic device according to claim 16, wherein the cavity of the at least one light channel is filled with a light-transmitting material and/or comprises a cross-section which is at least substantially dimensioned according to dimensions of the light-active surface of the semiconductor component.

23. The optoelectronic device according to claim 16, wherein a cross-section of the cavity of the at least one light channel remains at least substantially the same along a curved trajectory of the light channel.

24. The optoelectronic device according to claim 16, wherein the at least one semiconductor component is glued to the upper side of the carrier.

25. The optoelectronic device according to claim 16, wherein the at least one light channel is formed in a solid housing block.

26. The optoelectronic device according to claim 25, wherein the housing block comprises a planar bottom side for resting on the upper side of the carrier, and wherein the housing block is glued to the carrier.

27. The optoelectronic device according to claim 16, wherein the carrier comprises a planar upper side and/or a planar bottom side so that the optoelectronic device is surface mountable in case of the planar bottom side.

28. The optoelectronic device according to claim 16, wherein the at least one optoelectronic semiconductor component is a light detector or a light emitter, or wherein, in case of two or more semiconductor components, all semiconductor components are light detectors or light emitters, or wherein, in case of two or more semiconductor components, at least one light detector and at least one light emitter is provided.

29. A motor vehicle comprising: at least one interior element, wherein the optoelectronic device according to claim 16 is integrated into the interior element.

30. A method for manufacturing an optoelectronic device, the method comprising: providing a planar carrier for at least one optoelectronic semiconductor component; arranging the at least one optoelectronic semiconductor component on an upper side of the carrier; and arranging at least one light channel associated with the optoelectronic semiconductor component on the carrier, wherein the light channel is arranged such that the light channel extends between a first end of the light channel, which is distant from a light-active surface of the semiconductor component and comprises an opening into an exterior space, and a second end of the light channel, wherein the second end of the light channel comprises an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel comprises a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In the following, the invention is explained in more detail with reference to the drawings by means of embodiments.

[0032] FIG. 1 shows a perspective view of a variant of an optoelectronic device according to embodiments;

[0033] FIG. 2 shows a perspective view of a carrier of the device of FIG. 1;

[0034] FIG. 3 shows an upper view of a housing block of the device of FIG. 1;

[0035] FIG. 4 shows reception characteristics of the device of FIG. 1;

[0036] FIG. 5 shows further reception characteristics of the device of FIG. 1; and

[0037] FIG. 6 shows a perspective view of a light channel of an optoelectronic device according to embodiments.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0038] The variant of an optoelectronic device according to embodiments shown in FIGS. 1 and 2 comprises two optoelectronic semiconductor components 11, which are arranged at a distance from one another on the upper side 13 of a carrier 15. Each semiconductor component 11 is associated with its own light channel 17. In the variant shown, the light channels 17 are formed in a solid housing block 19, as FIG. 1 shows.

[0039] FIG. 6 illustrates an example of a light channel 17. The light channel 17 comprises a first end 21 that is distant from a light-active surface 23 of the associated semiconductor component 11 and that comprises an opening 25 to the outer space. The light channel 17 also comprises a second end 27, which comprises an opening 29 directed towards the light-active surface 23 of the semiconductor component 11. Between the two ends 21, 27 of the light channel 17 extends a cavity 31, which may optionally be filled with a light-transmitting material. The cavity 31 is surrounded by an inner wall 33, of which at least a section or the entire region of the inner wall 33 is designed reflective.

[0040] In the variant shown, the optoelectronic semiconductor components 11 are light detectors, for example in the form of a respective photodiode. Each semiconductor component 11 can thereby have a usable optical sensitivity in a predetermined spectral range for the detection of light in the spectral range.

[0041] The inner wall 33 of the cavity 31 can be designed to be reflective in such a way that there is a reflectivity of at least 75% or at least 80% or at least 85% or at least 90% or at least 95% for light from the spectral range. The percentage values refer to the proportion of the reflected radiation in relation to the incident radiation at a specific angle of incidence, which may be 90°, for example.

[0042] Such high reflectivity can be achieved in particular by at least the reflective section of the inner wall 33 comprising a reflective or mirror coating, for example of gold or silver (not shown).

[0043] The optoelectronic device according to FIGS. 1 and 2 is particularly suitable for use as a 2-zone solar altitude sensor, as will be explained below. In the device of FIGS. 1 and 2, the two openings 25 point in different directions into the outer space. Here, the direction of the opening is considered to be the direction of the respective normal to a cross-sectional surface extending through the respective opening 25. As illustrated with reference to FIG. 3, the angle between the opening directions of the two openings 25 of the light channels 17 is at least approximately 1.sup.0. This angular indication refers in particular to the horizontal angle between the directions of the openings and thus of the fields of view of the detectors 11 associated with the channels 17. In other words, the horizontal angle lies in an X-Y plane parallel to the planar upper surface 13 of the carrier 15. The vertical angle of acceptance may be at least approximately 6. Thus, the opening direction may be inclined approximately 60° with respect to the Z-axis (compare the coordinate system in FIG. 1).

[0044] FIG. 4 shows in a diagram the dependence of the measurement signal of the two semiconductor components 11 of the device of FIG. 1, each designed as a photodiode, with a changing angle of incidence of the detected radiation. Angles from −180° to +180° are plotted along the abscissa, indicating the position of a light emitter directed at the device with respect to a reference point in the device. This may be the geometric center of the device. The ordinate indicates the intensity of the detected light.

[0045] FIG. 5 shows in a diagram the dependence of a measurement signal K3, K4 of a single photodiode 11 of the device as well as a sum signal 5 of the two photodiodes 11 with changing angle of incidence of the detected radiation. Along the abscissa, angles from −135° to +135° are plotted, indicating the position of a light emitter directed at the device with respect to the reference point. The ordinate indicates the intensity of the detected light. The measurement signals K3, K4 and K5 refer to a movement of the light emitter along the y-axis (cf. FIG. 3).

[0046] The curves K3 and K4 relate to a respective signal recorded by a photodiode 11, while the curve K5 indicates the sum signal of both photodiodes 11. The sum signal corresponding to curve K5 corresponds to the measurement signal K1 in the angular range of approximately −45° and +45°.

[0047] By means of diagrams as exemplarily shown in FIGS. 4 and 5, a reception characteristic for the arrangement of the device of FIGS. 1 and 2 can be determined. When the device of FIGS. 1 and 2 is used, for example, as a sun position sensor, the reception characteristic makes it possible to determine the direction or at least the half-space from which the light is incident on the device.

[0048] If instead of photodiodes, light emitters such as LEDs are used as semiconductor components 11 in the device of FIG. 1, a device with radiation characteristics tilted to the horizontal and to the vertical is obtained. When LEDs with different colors are used, different colors can be seen at different angles. More than two semiconductor components 11 can also be provided, each with associated light channels 17. For example, if one uses four light channels 11 each rotated by 90° with associated light emitters or light detectors, the entire spatial area can be covered, for example in the horizontal direction. Mixed arrangements with light emitters and light detectors, each with an associated light channel, can also be implemented.

[0049] Although the invention has been illustrated and described in detail by means of the preferred embodiment examples, the present invention is not restricted by the disclosed examples and other variations may be derived by the skilled person without exceeding the scope of protection of the invention.