SURFACE ACOUSTIC WAVE RESONATOR AND MULTIPLEXER INCLUDING THE SAME

Abstract

A surface acoustic wave resonator (100) comprises a layered substrate including a carrier substrate (110) and a dielectric layer (112) having a low acoustic velocity. Another dielectric layer (122) is disposed on a piezoelectric layer (113) and interdigitated electrodes (131, 132) having an acoustic velocity lower than the acoustic velocity of the carrier substrate (110) and a positive temperature coefficient of frequency.

Claims

1. A surface acoustic wave resonator, comprising: a layered substrate, comprising: a carrier substrate (110) having an acoustic velocity; a dielectric layer (112) having an acoustic velocity lower than the acoustic velocity of the carrier substrate, the dielectric layer disposed on the carrier substrate; a piezoelectric layer (113) disposed on the dielectric layer; interdigitated electrodes (131, 132) disposed on the piezoelectric layer; and another dielectric layer (122) having an acoustic velocity lower than the acoustic velocity of the carrier substrate (110) and having a positive temperature coefficient of frequency, the other dielectric layer (122) disposed on the piezoelectric layer (113) and on the interdigitated electrodes (131, 132).

2. The surface acoustic wave resonator claim 1, wherein the other dielectric layer (122) has an acoustic velocity lower than the acoustic velocity of any of the layers (110, . . . , 113) of the layered substrate.

3. The surface acoustic wave resonator of claim 1, wherein the carrier substrate (110) and the piezoelectric layer (113) have a temperature coefficient of frequency below zero and the dielectric layer (112) and the other dielectric layer (122) have a temperature coefficient of frequency larger than zero.

4. The surface acoustic wave resonator of claim 1, wherein the dielectric layer (112) and the other dielectric layer (122) have the same temperature coefficient of frequency larger than zero.

5. The surface acoustic wave resonator of claim 1, wherein the other dielectric layer (120) comprises silicon dioxide or consists of silicon dioxide.

6. The surface acoustic wave resonator of claim 1, wherein the other dielectric layer (122) comprises at least one of germanium dioxide, scandium yttrium fluoride, zirconium tungsten oxide, hafnium tungsten oxide or consists of one of said materials.

7. The surface acoustic wave resonator of claim 1, wherein the interdigitated electrodes comprise a multitude of fingers (131, 132) having a pitch (133) related to a wavelength, the height of the other dielectric layer (122) relative to said wavelength is lower than 50% of the height of the piezoelectric layer (113) relative to said wavelength.

8. The surface acoustic wave resonator of claim 7, wherein the height of the other dielectric layer (122) in dependence on the height of the piezoelectric layer (113) is given as follows:
1%<hd/λ−hpiezo/λ<50% or
5%<hd/λ−hpiezo/λ<15% or
7%<hd/λ−hpiezo/λ<12% or
hd/λ−hpiezo/λ=10%, wherein hd represents the height of the other dielectric layer (122) and hpiezo represents the height of the piezoelectric layer (113).

9. The surface acoustic wave resonator of claim 1, the layered substrate further comprising a layer (111) having an acoustic velocity higher than the acoustic velocity of the carrier substrate (110), said layer (111) disposed between the carrier substrate (110) and the dielectric layer (112) of the layered substrate.

10. The surface acoustic wave resonator of claim 1, further comprising a passivation layer (123) disposed on the other dielectric layer (122).

11. The surface acoustic wave resonator of claim 1, wherein the carrier substrate (110) comprises one of monocrystalline silicon, aluminum oxide, silicon carbide and diamond, wherein the dielectric layer (112) of the layered substrate comprises one of silicon dioxide, germanium dioxide and doped silicon dioxide and wherein the piezoelectric layer (113) comprises one of lithium tantalate, lithium niobate, aluminum nitride and quartz.

12. The surface acoustic wave resonator of claim 11, the layered substrate further comprising a layer (111) having an acoustic velocity higher than the acoustic velocity of the carrier substrate (110), said layer (111) comprising one of polycrystalline silicon, amorphous silicon, aluminium nitride and silicon carbide.

13. A RF multiplexer circuit, comprising: a first port (431) to be coupled to an antenna; a second port (411) to be coupled to a transmit circuit and a transmit filter circuit (410) coupled between the first and second ports (431, 411); and a third port (421) to be coupled to a receive circuit and a receive filter circuit (420) coupled between the first and third ports (431, 421), wherein transmit and receive filter circuits (410, 420) each include resonators (412, 422).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In the drawings:

[0023] FIG. 1 shows a cross-section of a surface acoustic wave resonator according to the principles of the present disclosure;

[0024] FIG. 2 shows the effect of increasing thickness of a top temperature compensating silicon dioxide layer on the difference of TCF between resonance and anti-resonance frequencies of a temperature compensated SAW resonator;

[0025] FIG. 3 shows an admittance chart for different heights of silicon dioxide layers used in the layered substrate and on top of the resonator; and

[0026] FIG. 4 shows a principle block diagram of a duplexer using resonators according to FIG. 1.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0027] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings showing embodiments of the disclosure. The disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will fully convey the scope of the disclosure to those skilled in the art. The drawings are not necessarily drawn to scale but are configured to clearly illustrate the disclosure.

[0028] FIG. 1 shows a cross-sectional view of a portion of a SAW resonator loo according to the principles of the present disclosure. The resonator comprises a layered substrate comprising a stack of several layers of different acoustic velocities 110, 111, 112, 113. There is a lowermost carrier substrate no having moderate acoustic velocity. A layer in of high acoustic velocity is disposed on carrier substrate 110. A dielectric layer 112 of low acoustic velocity is disposed on layer in. A piezoelectric layer 113 is disposed on low acoustic velocity layer 112. Layer in of high acoustic velocity is optional and can be omitted. Additional layers may be disposed between carrier substrate 110 and high acoustic velocity layer 111 dedicated to specific functions such as a charge trapping layer or others. The layered or stacked substrate comprises layers of different acoustic velocity which achieves a defined vertical acoustic velocity profile so that the acoustic energy is substantially confined to the upper portion of the layer stack.

[0029] Carrier substrate no may comprise or may consist of monocrystalline silicon, aluminum oxide or Saphire, silicon carbide or diamond so that it exhibits moderate acoustic velocity. The optional layer in of high acoustic velocity may be made or may consist of polycrystalline silicon, amorphous silicon, aluminum nitride or silicon carbide. A charge trapping layer may be disposed between layers no and in.

[0030] Layer 112 is a dielectric layer that has a relatively low acoustic velocity, which is at least lower than the acoustic velocity of carrier substrate 110. Layer 112 may comprise or may consist of silicon dioxide, germanium dioxide, scandium yttrium fluoride, zirconium tungsten oxide, hafnium tungsten oxide, doped silicon dioxide such as fluorine-doped silicon dioxide. Doped silicon dioxide is very useful and it can be manufactured with standardized processes in a very defined way. The layer 112 has also a temperature compensating effect. While layers 110, 111, 113 have a negative TCF so that characteristic frequencies of the resonator such as resonance and anti-resonance frequencies drift to lower values with increasing temperature, layer 112 has a temperature compensating effect in that it has a positive TCF so that it counteracts the negative TCF of the other layers.

[0031] Layer 113 is a piezoelectric layer comprising or consisting of a suitable piezoelectric material such as lithium tantalate, lithium niobate, quartz, crystalline or columnar aluminum nitride, aluminum scandium nitride or others.

[0032] A pair of interdigitated electrodes are disposed on the top surface of piezoelectric layer 113. Each electrode comprises a multitude of, e.g. several hundreds of fingers wherein one finger of the first electrode is adjacent to another finger of the second electrode. In FIG. 1, representative electrodes 131 of the first electrode and electrode 132 of the second electrode are disposed at a pitch distance 133. The repetitive pitch 133 is related to the operating frequency of the SAW resonator. Usually twice the pitch equals the wavelength λ of the operating frequency.

[0033] Another dielectric, temperature compensating layer 122 is disposed on the top surface of the piezoelectric layer 113 and on top of the interdigitated electrodes. Temperature compensating layer 122 has a positive TCF and a low acoustic velocity. The positive TCF further compensates the negative TCF of the layers 110, 111, 113 and adds to the temperature compensating effect of layer 112. There are several options to select the material of layer 122 concerning the acoustic velocity. The acoustic velocity of layer 122 should be at least lower than the acoustic velocity of carrier substrate 110. Layer 122 may have the lowest acoustic velocity when compared to layers 110, 111, 112, 113, that is an acoustic velocity lower than any layer of the layered substrate. In a practical embodiment, the layer 122 may have the same acoustic velocity and the same temperature coefficient of frequency as layer 112. Layer 122 may be made of the same material as the temperature compensating, low velocity layer 112 of the layered substrate. According to an embodiment, layer 112 may be selected from the same group of materials as layer 112 which is silicon dioxide, germanium dioxide, scandium yttrium fluoride, zirconium tungsten oxide, hafnium tungsten oxide, doped silicon dioxide. In a preferred embodiment, layers 122 and 112 are made of the same material such as silicon dioxide or doped silicon dioxide. On top of the layer stack, a thin layer 123 having a passivation function is disposed on the surface of the low velocity temperature compensating layer 122. Layer 123 may be made of silicon nitride or other layers having a passivation function.

[0034] FIG. 2 shows a diagram obtained by simulation that illustrates the effect of the height of the layer 122 on the difference of TCF of resonance and anti-resonance frequencies, the so-called pole-zero-distance of the resonator of FIG. 1. As the pole-zero-distance of a resonator determines the bandwidth of a filter, the lower and upper edges of the passband of a filter will have a corresponding relation of the TCF. The horizontal axis of the chart in FIG. 2 shows the thickness of the silicon dioxide layer 122 in nanometers, the vertical axis shows the difference in TCF of the resonance and anti-resonance frequencies of the resonator in ppm/K. As can be gathered from FIG. 2, an increasing thickness of the silicon dioxide layer 122 reduces the difference in TCF for the resonance and anti-resonance frequencies of the resonator. Consequently, increasing thickness of layer 122 reduces also the difference in TCF of the lower and upper edges of the passband of a filter such as a ladder-type filter.

[0035] With the presence of temperature compensating layer 122, it is possible to reduce the height or thickness of temperature compensating layer 112 of the layered substrate. It turned out that a certain height of the top temperature compensating layer 122 has the same effect as a corresponding larger height of layer 112. The temperature compensating efficiency of layer 122 is higher than the temperature compensating efficiency of layer 112. One possible explanation for this observation could be that layer 122 carries more acoustic energy than layer 112 since layer 122 is closer to the interface between electrodes and piezoelectric layer, where the acoustic waves are originally generated, than layer 112. Consequently, with layer 122 disposed on top of the SAW resonator, the height of layer 112 can be reduced without sacrificing temperature compensating efficiency within the layered substrate system. As an additional effect, the excitation of volume waves in layer 112 which is directly related to the height of layer 112 is reduced. On the other hand, when comparing the temperature compensating effect of layers 112, 122, the same overall TCF of the resonator can be achieved by increasing the height of layer 122 and decreasing the height of layer 112, wherein a smaller increase of layer 122 allows a larger decrease of layer 112 assuming the same overall TCF of the resonator so that the use of layer 122 leads to a smaller overall height of the SAW resonator device when compared to a resonator having the same TCF without top temperature compensating layer 122.

[0036] Considering the height hd of temperature compensating layer 122 relative to the height hpiezo of the piezoelectric layer 113, it is useful to select the height hd of the temperature compensating layer 122 below 50% of the height hpiezo of piezoelectric layer 113. More preferably, the height of layer 122 should be between 5% and 15% of the height of the piezoelectric layer 113, more preferably between 7% and 12%. A preferred effect of layer 122 is achieved when the height of layer 122 is about 10% or 10% of the height of the piezoelectric layer 113. The relation of heights between hd and hpiezo can be summarized as follows:

1%<hd/λ−hpiezo/λ<50% or

5%<hd/λ−hpiezo/λ<15% or

7%<hd/λ−hpiezo/λ<12% or

hd/λ−hpiezo/λ=10%.

[0037] FIG. 3 shows the effect of different thickness relations between layers 122 and 112 on the admittance function of the resonator. The large spikes 301 relate to a SAW resonator of reference that includes no top temperature compensating layer and comprises a temperature compensating layer 112 only of a thickness of 500 nm. The spikes in the admittance chart above the main mode are rather strong and are caused by unwanted volume modes propagating in the temperature compensating layer 112. The moderate spikes 302 relate to a SAW resonator having a temperature compensating layer 112 of 300 nm and a top temperature compensating layer of 150 nm. The relatively small spikes 303 relate to a SAW resonator having a temperature compensating layer 112 of 100 nm and a top temperature compensating layer 122 of 200 nm. As can be gathered from FIG. 3, even a reduction in the combined thicknesses of bottom and top temperature compensating layers achieves the same overall TCF for the resonator and a remarkable reduction of the volume mode excitation. The examples shown in Figure 3 can be summarized as follows:

TABLE-US-00001 Example 1 Example 2 Example 3 Bottom layer 112 500 nm 300 nm 100 nm Top layer 122  0 nm 150 nm 200 nm Observation large spikes moderate spikes small spikes 301 302 303

[0038] A SAW resonator is useful to form filters to be used in multiplexers. A multiplexer combines multiple ports through corresponding filters to one antenna port. A first order multiplexer is also called a duplexer. Figure 4 depicts a duplexer 400 comprising an antenna poll 431 to which the antenna is to be coupled, a transmit (Tx) port 411 and a receive (Rx) port 421. Each signal path between antenna port 431 and transmit and lo receive ports 411, 421 includes a corresponding RF filter 410 and 420, respectively. Each of the filters 410, 420 is based on resonators such as 412, 422 which may be connected in a ladder-type structure or in any other suitable filter topology. Since unwanted modes from one of the filters of the duplexer such as a transmit filter 410 may couple into the receive filter 420, since the filters share the same antenna port 431, it is mandatory that any volume modes in a resonator having a layered substrate are as small as possible. When the resonators 412, 422 of filters 410, 420 include a top temperature compensating layer such as layer 422 of FIG. 1, the filters are substantially temperature compensated so that the lower and upper edges are substantially constant with regard to changing temperature. Temperature compensated edges of the passband avoid a different amount of drift of lower and upper passband edges which is the problem with temperature uncompensated layered substrate-based SAW resonators. Furthermore, the volume modes are fairly low so that cross-coupling between Tx and Rx bands is substantially reduced.

[0039] It will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit or scope of the disclosure as laid down in the appended claims. Since modifications, combinations, sub-combinations and variations of the disclosed embodiments incorporating the spirit and substance of the disclosure may occur to the persons skilled in the aft, the disclosure should be construed to include everything within the scope of the appended claims.