Perovskite photovoltaic device

Abstract

A photovoltaic device, comprises (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) n light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material. The light harvesting material comprises, a pervoskite absorber, and the second conductive layer comprises nickel. The semiconductor layer tray comprise TiO.sub.2 nanowires. The light-harvesting material may comprise a pervoskite absorber containing a psuedohalogen.

Claims

1. A photovoltaic device, comprising: (1) a first conductive layer, (2) an electron blocking layer, on the first conductive layer, (3) a semiconductor layer, on the electron blocking layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material, wherein the light-harvesting material comprises a perovskite absorber containing a pseudohalogen, and the difference in reflection percentage of the perovskite absorber after 1.5 hours measured at 700 nm in 95% humidity at room temperature, is less than 2%.

2. The photovoltaic device of claim 1, wherein the first conductive layer is transparent.

3. The photovoltaic device of claim 1, wherein the perovskite absorber comprises a lead compound.

4. The photovoltaic device of claim 1, wherein the semiconductor layer comprises TiO.sub.2.

5. The photovoltaic device of claim 1, wherein the hole transport material comprises spiro-MeOTAD.

6. The photovoltaic device of claim 1, wherein the first conductive layer comprises at least one transparent conductor selected from the group consisting of indium-tin oxide, fluorinated tin oxide and aluminum-zinc oxide.

7. The photovoltaic device of claim 1, wherein the semiconductor layer comprises TiO.sub.2 nanowires.

8. The photovoltaic device of claim 7, wherein the TiO.sub.2 nanowires have a length of at most 1000 nm.

9. The photovoltaic device of claim 1, wherein the second conductive layer comprises nickel.

10. The photovoltaic device of claim 9, wherein the second conductive layer comprises nickel having a thickness of at least 150 nm.

11. The photovoltaic device of claim 9, wherein the second conductive layer comprises nickel having a thickness of at least 300 nm.

12. The photovoltaic device of claim 1, wherein the pseudohalogen is thiocyanate.

13. The photovoltaic device of claim 1, wherein the perovskite absorber comprises methyl ammonium.

14. The photovoltaic device of claim 1, wherein the perovskite absorber comprises formamidinium.

15. A photovoltaic device, comprising: (1) a first conductive layer, (2) an electron blocking layer, on the first conductive layer, (3) a semiconductor layer, on the electron blocking layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material, wherein the light-harvesting material comprises a perovskite absorber is compound of formula ABX.sub.3, A comprises lead, B comprises an alkyl ammonium compound, X comprises I and SCN, and the difference in reflection percentage of the perovskite absorber after 1.5 hours measured at 700 nm in 95% humidity at room temperature, is less than 2%.

16. The photovoltaic device of claim 15, wherein the alkyl ammonium compound comprises methyl ammonium.

17. The photovoltaic device of claim 15, wherein the alkyl ammonium compound comprises formamidinium.

18. The photovoltaic device of claim 15, wherein the semiconductor layer comprises TiO.sub.2.

19. The photovoltaic device of claim 15, wherein the hole transport material comprises spiro-MeOTAD.

20. The photovoltaic device of claim 15, wherein the first conductive layer comprises at least one transparent conductor selected from the group consisting of indium-tin oxide, fluorinated tin oxide and aluminum-zinc oxide.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1A shows a schematic diagram of a perovskite solar cell with listed components being preferred: a fluorinated tin oxide (FTO) anode covered with a electron blocking TiO.sub.2 thin film, ruble TiO.sub.2 nanowires, spin-coated CH.sub.3NH.sub.3PbI.sub.3 layer, or spin-coated CH.sub.2NH.sub.3Pb(SCN).sub.2I layer and sprit-MeTAD layer, followed by a sputtered nickel cathode.

(2) FIG. 1B shows the energy diagram, of the device of FIG. 1A.

(3) FIG. 2a is a SEM image of TiO.sub.2 nanowires on a FTO substrate (inset magnified SEM image).

(4) FIG. 2b shows HR-TEM images of TiO.sub.2 nanowires.

(5) FIG. 2c is a SEM top-view image of a cell near the edge of a gold cathode.

(6) FIG. 2d is a cross-section SEM image of a cell with gold as cathode (inset: digital photo of an actual device with six cells).

(7) FIG. 2e is a SEM top-view image of a cell near the edge of a nickel cathode.

(8) FIG. 2f is a SEM cross section image of a cell with nickel as cathode (inset; digital photo of an actual device with six cells).

(9) FIG. 3 is a graph of J-V characteristic under illumination (1 sun, 1.5 global air mass) and in dark for gold-backed and nickel-back cells. Both cells use 900 nm TiO.sub.2 nanowires on FTO as anode for a fair comparison.

(10) FIG. 4 is a graph of J-V curves of cells using 900, 300, and 1200 nm TiO.sub.2 nanowires as anode and 80 nm thick gold as back electrode.

(11) FIG. 5 is a graph of J-V curves of a cell using 1200 nm TiO.sub.2 nanowires as anode and 150 nm thick nickel as back cathode.

(12) FIG. 6A is a graph of J-V curves for nickel-cathoded cells having 150 nm thick Ni measured on day 1, day 2, and day 5 Between each measurement, the device is stored in a desiccator.

(13) FIG. 6B is a graph of J-V curves for nickel-cathoded cells having 300 nm thick Ni measured on day 1, day 2, and day 5. Between each measurement, the device is stored in a desiccator.

(14) FIG. 7 is a graph of photovoltage rising transients of a 900 nm rich nanowire (NWs) photoanodes devices with 80 nm Au as cathode and a 900 nm TiO.sub.2 NWs photoanodes device with 300 nm Ni as cathode.

(15) FIG. 8a is a graph of the moisture-tolerance test of conventional CH.sub.3NH.sub.3PbI.sub.3.

(16) FIG. 8b is a graph of the moisture-tolerance test of CH.sub.3NH.sub.2Pb(SCN).sub.2I.

(17) FIG. 9 is an X-ray diffraction (XRD) patterns of CH.sub.3NH.sub.3Pb(SCN).sub.2I comparison to the conventional CH.sub.3NH.sub.3PbI.sub.3, along with Pb(SCN).sub.2 and CH.sub.3NH.sub.3I (MAO.

DETAILED DESCRIPTION

(18) The present invention makes use of the discovery that noble metals may be replaced with nickel, as the back cathode. In the guest for high work function metals, noble metals such as gold, platinum, or silver often come up as the routine choice. The present invention break down this stereotype selection rule for perovskite-type solar cells using nickel as the back cathode. Nickel has a unit price less than 0.03% e that of gold. The present invention also makes use of the discovery that TiO.sub.2 nanowires may be used to efficiently collect electrons generated from the perovskite light harvesting elements in perovskite solar cells. The present invention also makes use of the discovery that by replacing two iodide with two pseudohalogens, that is, thiocynide ions, (—SON), a new perovskite material CH.sub.3NH.sub.3Pb(SON).sub.2I has been developed that exhibits much better moisture-tolerance than the conventional CH.sub.3NH.sub.3PbI.sub.3. The three discoveries may be used independent of the other, or preferably used together.

(19) FIG. 1A illustrates a solar cell, 7, with preferred materials listed; other materials for each of the different layers may be used instead of those listed. The solar cell includes a first conductive layer, 6; an electron blocking layer, 5, on the electron blocking layer, a semiconductor layer, 4, on the first conductive layer a light-harvesting material, 3, on the semiconductor layer a hole-transporting material, 2, on the semiconductor layer; and a second conductive layer, 1, on the hole-transporting material.

(20) Preferably, the first conductive layer is transparent, so that light may penetrate one side of the device and reach the light-harvesting material Optionally, the first conductive layer may be on a substrate. Examples of substrates include glass, quartz and transparent polymeric materials, such as polycarbonate. Examples of transparent conductive layers include indium-tin oxide, fluorinated tin oxide, and aluminum-zinc oxide. Graphene may also be used as the first conductive layer. The first conductive layer may also be formed as a composite material and/or formed as multiple layers. For example, a planar substrate of glass may be coated with a layer of fluorinated tin oxide, and fine particles of fluorinated tin oxide applied to die surface and sintered together to provide the substrate and first conductive layer.

(21) In an alternative configuration, such as that described in Patent Application Publication, Pub. No. US 2011/0220192, the first conductive layer, with the semiconductor layer and light harvesting material, are on the support, but spaced away from the electrode and second conducting layer, and not in direct electrical contact therewith. In operation of this alternative configuration, light does not need to travel through the first conductive layer, so a non-transparent conductive Layer may be used, for example a metal such as nickel, gold, silver or platinum, or a conductive oxide, such as electrically conductive titanium suboxides.

(22) The optional blocking layer, which serves to bind defective sites and suppress back electron transfer, and may have a different composition than the semiconductor layer, and is preferably a transparent insulating material, for example titanium dioxide (TiO.sub.2), magnesium oxide (MgO), aluminum oxide (Al.sub.2O.sub.3), zirconium oxide (ZrO.sub.2), boron nitride (BN), silicon oxide (SiO.sub.2), diamond (C), barium titanate (BaTiO.sub.3), and mixtures thereof. The blocking layer may also be formed of a transparent semiconductor material and preferably is an n-type semiconductor, for example titanium dioxide (TiO.sub.2), zinc oxide (ZnO), zirconium, oxide (ZrO.sub.2), tungsten oxide (WO.sub.3), molybdenum oxide (MoO.sub.3), lead oxide (PbO), and mixtures thereof, or mixtures thereof with a transparent insulating material. It is important that the blocking layer be both conformal and compact.

(23) The optional blocking layer preferably has a thickness of at most 2 nm, or may be present in an amount of at most 10 atomic layers. It may also be present as islands on the surface of the semiconductor layer, in which case the thickness may be expressed as an average thickness across the semiconductor layer, for example as less than one atomic layer.

(24) The semiconductor layer, which is n-doped or n-type, may be a transparent semiconductor, such as titanium dioxide (TiO.sub.2), zinc oxide (ZnO), zirconium oxide (ZrO.sub.2), tungsten oxide (WO.sub.3), molybdenum oxide (MoO.sub.3), lead oxide (PbO) or mixtures thereof. Preferably, the semiconductor layer has a thickness of at most 100 nm, for example 1 to 100 nm, including 5, 10, 15, 20, 25, 30, 35, 40, 46, 50, 55, 60, 66, 70, 75, 80, 85, 90 and 95 nm. If the semiconductor layer is not intrinsically formed as an n-type semiconductor, such as is the case with TiO.sub.2, is may be chemically n-doped.

(25) The semiconductor layer may be formed by physical vapor deposition such as evaporation or sputtering, or by chemical deposition, such as atomic layer deposition, or by forming a thin layer of a precursor which is then decomposed to form the semiconductor layer. Electrochemical deposition or deposition from solution, may also be used in the case of conductive polymers. The thickness may be controlled by the amount of semiconductor initially deposited, or by removing deposited semiconductor by etching, such as chemical etching. The semiconductor layer may also be formed by applying a dispersion of fine particles of the semiconductor dispersed into a fluid, for example particles have an average diameter of 5 to 100 nm, including 10, 20, 30, 40, 50, 60, 70, 80 or 90 nm, dispersed in water, or an organic solvent for example alcohols such as methanol or ethanol, or mixtures thereof. Sintering may be desirable to remove the solvent and/or improve the contact between the semiconductor layer and the first conductive layer, or to improve the crystallinity of the semiconductor layer. It is important that the semiconductor layer both conformal and compact. Ideally, the contact between the first conductive layer and the semiconductor layer should be an ohmic contact.

(26) Atomic layer deposition may be carried out by chemical reaction of two compounds which react to form the semiconductor layer. The structure onto which the semiconductor layer is to be deposited is exposed to vapors of the first of the two chemicals, and then exposed to the vapors or gasses of the second of the two chemicals. If necessary, the exposure and/or reaction may be carried out at elevated temperatures. In some instances, byproducts of the reaction may need to be removed before repeating the process by washing, evacuation, or by the passage of an inert gas over the structure. The process may be repeated until the desired thickness of the semiconductor layer is formed. For example, in the case of the transparent oxide semiconductors, which are typically compounds of a metal and oxygen, the first chemical may be a halide, such as a chloride, bromide or iodide, an oxychloride, oxybromide or oxyiodide, organometallic compounds, alkoxides of the metal and other ceramic precursor compounds (such as titanium isopropoxide), as well as mixtures thereof. The second chemical may be water (H.sub.2O), oxygen (O.sub.2 and/or O.sub.3) or a gaseous oxidizing agent, for example N.sub.2O, as well as mixtures thereof. Inert gasses, such as helium, argon or nitrogen may be used to dilute the gasses during, the process.

(27) In a preferred alternative embodiment, the semiconductor layer is composed of TiO.sub.2 nanowires. The nanowires may be prepared by solvothermal method with controllable length-to-diameter ratio and are well separated..sup.13 Preferably, the length of the TiO.sub.2 nanowires is 400-1100 nm, more preferably 600-1000 nm, including 700, 800 and 900 nm.

(28) The light-harvesting material is a perovskite absorber, a compound of formula ABX.sub.3, where A is a metal atom such as lead or tin, B is a counter ion (typically an alkyl ammonium compound), and X is a halide (F, Cl, Br, or I) or pseudohalide such as SCN (thiocynide ion), which forms crystals of the perovskite structure. Examples include CH.sub.3NH.sub.3PbX.sub.3 and H.sub.2NCHNH.sub.2PbX.sub.3. Preferably, the light-harvesting material is applied by spin-coating so that it fills spaces on and in the semiconductor layer.

(29) The hole-transporting material may be a solid p-type semiconductor, for example CuI, CuSCN CuAlO.sub.2, NiO, and mixtures thereof, as well as p-doped conductive polymers. Conductive polymers include poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, polyp-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, and polynaphthalene. Other examples include polyaniline, polyaniline derivatives, polythiophene; polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, and polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV), in which the heteroarylene group can be for example thiophene, furan or pyrrol, polyphenylene-sulphide (PPS), polyperinaphthalene (PPN), and polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof. As used herein, the term derivatives means the polymer is made from monomers substituted with side chains or groups. P-doping of the solid semiconductor and the conductive polymers may be carried out chemically, if necessary, for example by treatment with an oxidizing agent, such as oxygen, fluorine or iodine, or by electrochemical oxidation. A preferred hole-transporting material is spiro-MeOTAD (2,2′7,7′-tetrakis(N,N-di-p-methoxyphenyl amine)-9,9′-spirobifluorene).

(30) A second conductive layer is in contact with the hole-transporting material, and is preferably formed of a highly conductive and chemically unreactive material, for example gold, platinum, or metallic alloys. Preferably, the second conductive layer is nickel or a nickel alloy. The second conductive layer may be present on a third conductive layer, which may be formed of any conductive material. The second conductive layer serve to transport electrons back to the hole-transporting material, thus completing the electrical circuit. The second conductive layer is preferably on a support, which may be formed of any solid material, such as plastic, glass or metal. Preferably, the second conductive layer is formed by evaporation or sputtering.

(31) As shown in FIG. 1A, using the preferred material listed on the illustration, the cell contains about 900 nm high rutile TiO.sub.2 nanowire (NWs) array on FTO (fluorinated tin oxide) glass as the photoanode,.sup.13 which is filled with a layer of spinning-coated CH.sub.3NH.sub.3PbI.sub.3, a 220 nm thick spinning-coated Spiro-MeOTAD (2,2′7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene) as hole transport material (HTM), capped by a sputtering-coated nickel film as the cathode.

EXAMPLES

(32) Preparation of the Photo odes having Rutile TiO.sub.2 Nanowire Arrays on FTO.

(33) The TiO.sub.2 nanowire arrays are fabricated via a solvothermal method reported previously. In a typical process, FTC substrates coated with a layer of TiO.sub.2 thin film were loaded into a sealed Teflon-lined stainless steel reactor filled with 6 mL of 2-butanone, 6 mL of 37% hydrochloric acid, and 0.5 mL of tetrabutyltitanate, and the mixture was then kept at 200° C. for 40 min. The obtained substrates with nanowire arrays were cleaned by dipping in a H.sub.2O.sub.2 (30 wt %)/NH.sub.4OH (25 wt %) (10:1 of volume ratio) solution for 10 min., followed by annealing, at 450° C. for 30 min under an O.sub.2 atmosphere. The obtained electrodes were then soaked in 40 mM TiCl.sub.4 solution at 65° C. for 1 h, followed by rinsing with DI water. The TiO.sub.4-treated TiO.sub.2 nanowires were annealed at 500° C. for 30 min.

(34) Synthesis of CH.sub.3NH.sub.3I.

(35) 19.5 mL of methylamine (40 wt % water solution) was dropwisely added to 32.3 mL of hydroiodic acid (57 wt % in water, Aldrich) in an ice bath and under stirring for 2 h. The precipitate was recovered by extracting the mixture in a rotary evaporator at 50° C. The yellow/brown product was filtered and washed by diethyl ether to yield white powders, which was further purified by recrystallization in ethanol and diethyl ether..sup.14 The nuclear magnetic resonance (NMR, Bruker Avance III 500 MHz) spectrum of the product in d6-DMSO can be found in Figure S1 of the Supporting Information.sup.21.

(36) Preparation of precursory CH.sub.3NH.sub.3PbI.sub.2 Solution.

(37) 0.29 g (0.63 mmol) of PbI.sub.2 and 0.1 g (0.63 mmol) of CH.sub.3NH.sub.3I ere dissolved in 0.5 mL of γ-butyrolactone solution at 60° C..sup.15

(38) Preparation of precursory CH.sub.3NH.sub.3Pb(SCN).sub.2I Solution.

(39) CH.sub.3NH.sub.3Pb(SCN).sub.2I precursory solution is prepared as following: 0.283 g Pb(SCN).sub.2 and 0.15 g CH.sub.3NH.sub.3I were dissolved in 0.6 ml DMF under stirring at 60° C. for 3 hours.

(40) Preparation of HTM Solution.

(41) 92 mg of 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-MeOTAD), 7.2 mg of Li bis-trifluoromethane sulfonimide, and 12 mg of 4-tert-butylpyridine were dissolved in 1 mL of chlorobenzene.

(42) Device Fabrication.

(43) The precursory solution of CH.sub.3NH.sub.3PbI.sub.3 or precursory solution of CH.sub.3NH.sub.3Pb(SCN).sub.2I was spin coated on the TiO.sub.2 nanowire photoanodes at 2000 rpm for 1 min in ambient conditions. The deposited CH.sub.3NH.sub.3PbI.sub.3 or CH.sub.3NH.sub.3Pb(SCN).sub.2I film was dried in Ar at 105° C. for 10 min, followed by spinning coating HTM at 2500 rpm. Nickel was sputtered on the top of the HTM layer through a homemade aluminum mask to form the nickel pads as back cathodic electrode. Au films were deposited with an Edward 306A thermal evaporator with base pressure of 6×10.sup.−6 Torr. Nickel thin films were deposited using the magnetron sputtering technique. The rotary magnetron sputtering system was customized by Denton Vacuum with DC power supplies. The system has sputtering targets set vertically. The based pressure of the deposition was 1×10.sup.−6 Torr, and the deposition pressure was 3 mTorr of Ar. The distance of substrate-to-target is 7 cm. The Ni target was ignited at the power of 80 W and presputtered for 5 min. The samples were then moved to the sputtering zone in a horizontal cycling swiping manner (1 nm/loop, 6 s/loop). The growth rate was calibrated using SEM cross-section measurements. The temperature on the substrate surface is monitored with a set of irreversible temperature indicators (Cole-Palmer) ranging from 65 to 135° C. After sputtering under above conditions, none of the temperature labels turn black, suggesting that the temperature on substrate is below 65° C. during sputtering.

(44) Structure Characterization and Other Measurement

(45) The morphologies and microstructures of the samples were characterization using a Hitachi-S4800 FE-SEM or a Tescan SEM (model Vega it SSH). The TEM and HR-TEM images were taken using a Tecnai F20 (FEI Hillsboro, Oreg.) microscope at, an accelerating voltage of 200 kV. The sheet resistance measurement is conducted using a Jandel four-probe sheet resistance measurement system,

(46) Photovoltaic Performance Measurement.

(47) The current density-voltage (J-V) curves were collected using a potentiostat (Gamry Reference 600) and the devices were illuminated at one sun 1.5 air mass global (AM G) spectrum provided by a solar simulator (Photo Emission inc., Camarillo, Calif., model SS50B). It is reported that hysteresis appears in J-V measurement at low voltage scan rate (<150 mV/s)..sup.16 This is seen in our initial study, and therefore, to minimize hysteresis, we set the voltage sweeping rate at 200 mV/s with a step of 2 mV, which is a fairly optimized setting..sup.17 This setting is applied to all J-V measurements in this work for fair comparisons between different devices. All devices were measured under the same measurement conditions as described above on day 1 (the day that the device was prepared), day 2, and day 5 to see if samples performance undergo any significant changes, at least within the first 5 days. Between each measurement the samples are stored in a desiccator. The open-circuit photovoltage transient was measured on Gamry Reference 600 in the Chronopotentiometry mode. An ultrafast optical shutter is used (UniBlitz model LS6, 700 is from full closure to full open, aperture is 6 mm in diameter with a shutter driver model D 122) to control the incident sunlight. A commercial solid-state silicon photodiode (OSRAM Opto Semiconductor, SPX 61, response time 20 ns, spectral range 400-1100 nm, and active area 2.65 mm×2.65 mm=7 mm.sup.2) is used as a reference to verify the measurement limit of our setup (Figure S2 in Supporting Information.sup.21).

(48) Results and Discussion

(49) FIG. 2a is the scanning electron microscope (SEM) image of the ˜900 nm TiO.sub.2 nanowires array grown almost vertically on the FTC substrate. The diameter of TiO.sub.2 nanowires is about 30-40 nm (see inset of FIG. 2a). The high-resolution transmission electron microscope (HRTEM) image in FIG. 2b suggests a single crystal feature of the nanowires. The (110) lattice crystal plane with a fringe spacing of 0.325 nm indicates that these nanowires are rutile TiO.sub.2. FIG. 2c is the top-view SEM image of the cell near the edge (along the yellow dashed line) of a gold cathode. The lower left portion of FIG. 2c is the morphology of TiO.sub.2 nanowire photoanode after spincoating with CH.sub.3NH.sub.3PbI.sub.3 or CH.sub.3NH.sub.3Pb(SON).sub.2I and spiro-MeOTAD, while the upper right portion of FIG. 2c is the morphology after gold evaporation. It can be clearly seen that thermal evaporation of gold does not change the morphology of the underneath layers. FIG. 2d is the cross-section SEM image of a device with gold as cathode, in which each layer including the wrapped TiO.sub.2 nanowires by CH.sub.3NH.sub.3PbI.sub.3, or the CH.sub.3NH.sub.3Pb(SCN).sub.2I layer, the spiro-MEOTAD layer, and the gold layer, can be identified. The thickness of Spiro-MeOTAD is about 220 nm, which is the optimized thickness that yields the best of we can achieve. The inset of FIG. 2d is the photo of the device with six gold cathodes, FIG. 2e is a top view of the cell near the edge (along the dashed line) of a nickel cathode. Unlike the shape edge found in the thermally evaporated gold cathode, the sputter nickel does not give a very sharp edge. The upper right part of FIG. 2e is covered with nickel, while the lower left part is intact. Nonetheless, it can still be seen that the morphology of the CH.sub.3NH.sub.3PbI.sub.3 or CH.sub.3NH.sub.3Pb(SCN).sub.2I layer and spiro-MeOTAD layer remains the same after sputtering compared with the parts that are not coated with nickel, indicating that the nickel sputtering process does not change the morphology of the spin-coated CH.sub.3NH.sub.3PbI.sub.3 or the CH.sub.3NH.sub.3Pb(SCN).sub.2I layer and Spiro-MeOTAD layers under our optimized operational parameters. The inset of FIG. 2f shows six nickel cathode. The diameter for all the cathodes is 3 mm.

(50) FIG. 3 shows the photocurrent density versus photovoltage (J-V) curves of cells using 900 nm TiO.sub.2 nanowires as photoanodes and using $0 nm gold film, 150 nm nickel film, and 300 nm nickel film as cathodes, respectively. The photovoltaic performance of the cells are summarized in Table 1. It can been seen that the cell using 300 nm nickel film as cathode exhibits comparable energy conversion efficiency (η=10.4%) to that of the cell using 80 nm gold film as cathode (η=11.8%). However, the cells using 150 nm nickel film as the cathodes exhibits a notable drop in efficiency (η=7.7%).

(51) TABLE-US-00001 TABLE 1 Photovoltaic Performance of Solar Cells with Ni and Au as Back Cathodes cathodes J.sub.sc V.sub.oc of cells (mA m.sup.−2) (mV) FF η (%) R.sub.sh (Ω) R.sub.s (Ω) Ni 150 nm 21.4 752 0.50 7.7 11794.6 264.4 Ni 300 nm 20.6 830 0.61 10.4 13851.4 103.2 Au 80 nm 21.7 792 0.68 11.6 14160.9 81.5

(52) To troubleshoot the source of energy loss in 150 nm nickel cathoded cells, short circuit current density (J.sub.sc) for ail cells are first compared. However, both cells exhibit almost the same 0.6, about 20 mA/cm.sup.−2. Furthermore, V.sub.oc of the cell using 150 nm nickel as cathode is 0.752 V, only slightly lower than that of the cells using 80 nm gold or 300 nm Ni film as cathode. Then, compared to the fill factor (FF) or 68% for the cell using gold as cathode, it is the relatively low FF (50%) found in the cell using nickel as cathode that is responsible for its low conversion efficiency. Since there is no significant difference in V.sub.oc and J.sub.sc in comparison to the other two cells, we attribute the low FF in cell with 150 nm nickel cathode mainly to its high series resistance, indeed, shunt resistance (R.sub.sh) at J.sub.sc for 150 nm nickel-backed cell is 11 794Ω, which is about 80% of that for gold-backed cell, while the series resistance (R.sub.s) at V.sub.oc for the nickel-backed cell is 264Ω, over 3 times higher than that of the gold-backed cell. The relations between current, fill factor, and shunt resistance are shown by the following equations.sup.18

(53) $\begin{array}{cc}{\mathrm{FF}}_{\mathrm{SH}}={\mathrm{FF}}_0\left(1-\frac{1}{R_{\mathrm{SH}}}\right)& \left(1\right)\\ I=I_L-I_0\exp \left[\frac{\mathrm{qV}}{\mathrm{nkT}}\right]-\frac{V}{R_{\mathrm{SH}}}& \left(2\right)\end{array}$
where I is the cell output current, I.sub.L is the light generated current, V is the voltage across the cell terminals, T is the temperature, q is the charge of an electron, k is Boltzmann constant, n is the ideality factor, and R.sub.SH is the cell shunt resistance. The idea cell which is not affected by any resistance is denoted by I.sub.0 and FF.sub.0.

(54) The relations between current, fill factor, and series resistance are shown by eqs 3 and 4..sup.18 R.sub.s is the series resistance.

(55) $\begin{array}{cc}{\mathrm{FF}}_s={\mathrm{FF}}_0\left(1-R_s\right)& \left(3\right)\\ I=I_L-I_0\exp \left[\frac{q\left(V+{\mathrm{IR}}_s\right)}{\mathrm{nkT}}\right]& \left(4\right)\end{array}$

(56) Equations 1-4 can be combined to briefly estimate the respective impact from series resistance and shunt resistance on FF in comparison to an ideal solar cell. The simulated result suggests that the loss of FF in the cell with a nickel cathode is mainly caused by the high series resistance (Figure S2)..sup.21 As supporting evidence, four-probe sheet resistance of the 80 nm thick gold cathodes is measured to be 0.2-0.4 Ω/square, in contrast to 90-100 Ω/square for the 150 nm thick nickel cathode. The two-probe measurement on the edge-to-edge resistance of gold pads is typically about 0.5Ω, in contrast to ˜150Ω for nickel pads. Indeed, cells with a 100 nm thick nickel cathode, i.e. even higher series resistance, yield even lower FF as shown in Figure S3.sup.21 and Table S1.sup.21.

(57) As we further increased the thickness of the nickel film to 300 nm thick, the FF of the cell increases to 0.61 and the conversion efficiency reaches 10.4%. The two-probe measurement on the edge-to-edge resistance of the 300 nm thick nickel pads is measured to be 3Ω, and the four-probe sheet resistance of the 300 nm thick nickel cathodes is measured to be 3-5 Ω/square.

(58) The effect of the length of the TiO.sub.2 nanowires was also studied. The J-V curves of cells using 300, 900, and 1200 nm TiO.sub.2 nanowires as photoanodes and 80 nm thick gold as back electrode cells are shown in FIG. 4 and Table 2. The result suggest that that 900 nm TiO.sub.2, nanowires give the best result..sup.19

(59) TABLE-US-00002 TABLE 2 Photovoltaic Performance of Solar Cell with 300, 900, and 1200 nm TiO.sub.2 Nanowires as Photoaonde and 80 nm Gold as Back Cathode J.sub.sc V.sub.oc NWs length for cells (mA m.sup.−2) (mV) FF η (%) 300 nm 19.3 850 0.63 10.4 900 nm 21.7 792 0.68 11.6 1200 nm  9.1 722 0.73 4.7

(60) Further increase of the length of the nanowires deteriorates the cell performance as shown by the device using 1200 nm TiO.sub.2 nanowires as anode and 150 nm Ni as cathode, which only reach 4.1% in efficiency (FIG. 5). This trend agrees with the Au-cathoded cells.

(61) The stability of the photovoltaic performance of the cells using nickel cathodes are also studied as shown in FIGS. 6A and 6B and summarized in Table 3. FIGS. 6A and 66 respectively show the J-V curves of the cells using 150 nm Ni and 300 nm Ni film as the cathode. Explicitly, for the 150 nm Ni-cathoded cell, the J.sub.sc decreased from 22.4 mA/cm.sup.−2 on day 1 to 20.4 mA/cm.sup.−2 on day 5, and FF increased from 43% on day 1 to 50% on day 5. For the 300 nm Ni-cathoded cell, V.sub.oc changed from the 0.70 V on day 1 to 0.75 V on day 5, J changed slightly from 20.1 mA/cm.sup.−2 on day 1 to 20.6 mA/cm.sup.−2 on day 5, and FF increased from 50% on day 1 to 61% on day 5. We think that the decrease in J.sub.sc for the 150 nm Ni-cathoded cell is likely due to the absorption of moisture in the CH.sub.3NH.sub.3PbI.sub.3. The overall efficiencies increase from 6.7% on day 1 to 7.7% on days for the 150 nm Ni-cathoded cell and 7.8% on day 1 to 10.4% on day 5 for the 300 nm Ni-cathoded cell. For comparison, the results for cells with 100 nm nickel cathode are shown in Figure S3.sup.21 and Table S1.sup.22.

(62) We further studied the photovoltage rising transients of both gold-cathoded and nickel-cathoded cells. The photovoltage rising transient reflects how rapidly the electrons and holes can be photoinduced and further transport through the internal layers (electrons from perovskite.fwdarw.TiO.sub.2.fwdarw.FTO and holes from perovskite.fwdarw.HTM.fwdarw.metals (gold or Ni)) in the presence of the recombination of the above process..sup.20 FIG. 7 shows that the rising time of V.sub.oc (defined as the time it takes from shuttle open to 90% of the full V.sub.oc) for the Au-cathoded and Ni-cathoded cells are 27.5 and 31.9 ms, respectively. This result suggests that replacement of gold cathode with Ni cathode does not significantly vary the charge transport kinetics. Therefore, nickel is a potentially suitable low-cost metal as cathode in perovskite solar cells. Note that, neither the motion of the shutter (response time=0.7 ms from full-close to full-open) nor the data acquisition rate (with the highest rate at 10 μs per data point) is the bottleneck of the above measurement, as confirmed by a commercial ultrafast silicon photodiode (see Figure S4 in Supporting Information.sup.21).

(63) TABLE-US-00003 TABLE 3 Photovoltaic Performance of Solar Cells with Ni as Cathode Measured on Different Days.sup.a J.sub.sc V.sub.oc Cell Name (mA m.sup.−2) (mV) FF η (%) 150 nm Ni Day 1 22.4 702 0.43 6.7 Day 2 22.2 752 0.45 7.5 Day 5 20.4 752 0.50 7.7 300 nm Ni Day 1 21.0 746 0.50 7.8 Day 2 20.6 822 0.60 10.2 Day 5 20.6 830 0.61 10.4 .sup.aBetween each measurement, the devices are stored in a desiccator.

(64) The accelerated stability tests for perovskite materials were performed by monitoring the reflection of the corresponding perovskite films in 95% humidity air at room temperature. Increase of reflection in FIG. 8A for the conventional CH.sub.3NH.sub.3PbI.sub.3 is due to the decomposition of perovskite structure in moisture. As can be seen, conventional perovskite CH.sub.3NH.sub.3PbI.sub.3 started to decompose immediately after being exposed to moisture. After 1.5 hours, most of the black film has been decomposed to the yellowish color, originated form PbI.sub.2, and the corresponding reflection increases from about 10% to about 20%. In the case of CH.sub.3NH.sub.3Pb(SCN).sub.2I as shown in FIG. 8B, no obvious reflection increase was observed even after 4 hours exposure to moisture. The corresponding reflection increases only 2% after 4 hour of exposure in moisture, from about 6% to 8% and a tiny white piece emerges at the corner, which is likely due to Pb(SCN).sub.2. In addition, the black color of CH.sub.3NH.sub.3Pb(SCN).sub.2I film can last for months in air with humidity 40% or below. The lower inserted images in FIGS. 8A and 8B compare the CH.sub.3NH.sub.3PbI.sub.3 film and CH.sub.3NH.sub.3Pb(SCN).sub.2I film after 30 days in air at 20-40% humidity. According to the crystal structure of CH.sub.3NH.sub.3PbX.sub.3 perovskite material, ligands between lead and halogen atoms form the frame of the perovskite structure. The first step of degradation in moisture involves a formation of a hydrated intermediate containing isolated PbX.sub.6.sup.4− octahedral The formation constants K.sub.4 is calculated to be only 0.35 for PbI.sub.4.sup.2−, which corresponds to the weak interaction between halogens and lead. In the case of CH.sub.3NH.sub.3Pb(SCN).sub.2I, the interaction between lead and thiocyanate is much stronger and the formation constant K.sub.4 is up to 7 for Pb(SCN).sub.4.sup.2−. Comparing the spheric shape I.sup.− with the linear shape SCN.sup.− as indicated by its Lewis structure, the lone pair of electrons from S and N in SCN.sup.− can form stronger ligand with Pb, which in turn stabilizes the frame structure of CH.sub.3NH.sub.3Pb(SCN).sub.2I. We show that direct improvement of moisture tolerance for CH.sub.3NH.sub.3Pb(SCN).sub.2I has been observed in accelerated stability test compared with traditional CH.sub.3NH.sub.3PbI.sub.3 perovskite material.

(65) FIG. 9 collects the X-ray diffraction (XRD) patterns of perovskite type CH.sub.3NH.sub.3Pb(SCN).sub.2I in comparison to the conventional CH.sub.3NH.sub.3PbI.sub.3 film, along with Pb(SCN).sub.2 and CH.sub.3NH.sub.3I (MAO. The typical characteristic XRD peaks (2θ) for the conventional perovskite CH.sub.3NH.sub.3PbI.sub.3 at 14, 20, 29, 32, 41 degree, ail present as expected. In comparison, these peaks are also found for CH.sub.3NH.sub.3Pb(SCN).sub.2I, which strongly indicates that our CH.sub.2NH.sub.3Pb(SCN).sub.2I material is also in perovskite structure. The calculated XRD pattern for CH.sub.3NH.sub.3Pb(SCN).sub.2I matches well with the major XRD peaks from experiment. XRD patterns for Pb(SCN).sub.2 and MAI were also listed in FIG. 2 as references.

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