Abstract
Techniques produce integrated native metal oxide discrete elements which can be used to fabricate discrete dynode electron multiplier (DDEM) devices, for example by creating dynodes with a native oxide as secondary electron emissive (SEE) layer from a metal block. The metal block may comprise or consist of a metal base component, for example Al, Al alloys or BeCu, of metal oxide SEE materials Al2O3 or BeO. Growing a native oxide from these base metals, Al2O3 or BeO eliminates the need of a costly and time-consuming SEE coating on the dynode surface. Furthermore, aluminum alloys offer intrinsic dopant, in particular magnesium where its oxide provides a higher secondary electron yield than the aluminum oxide. The use of aluminum, its alloys or BeCu material block allows flexibility in design and fabrication of DDEM without an SEE coating process.
Claims
1. A method of forming a device, the method comprising: positioning a workpiece to be machined, the workpiece comprising a block of a base metal and a single substrate to which the block of the base metal is attached, the base metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper; machining the block of the base metal to form a first dynode array and a second dynode array opposed to and spaced from the first dynode array; and growing a native oxide at a surface of least a portion of each of the dynodes of the first and the second dynode arrays, the native oxide comprising a secondary electron emissive layer.
2. The method of claim 1, further comprising: attaching the block of the base metal to the single substrate via at least one of soldering, bonding, adhering, clamping, riveting, or fastening.
3. The method of claim 1 wherein attaching the block of the base metal to the single substrate comprises attaching the block of the base metal to at least one of a ceramic substrate, a direct bonded copper (DBC) substrate, or direct bonded aluminum (DBA) substrate.
4. The method of claim 1 wherein growing a native oxide at a surface of least a portion of the at least one dynode includes heating the machined piece of metal in a presence of oxygen.
5. The method of claim 1, further comprising: detachably physically coupling a printed circuit board as a side wall carrying at least one electrical network to the first and the second dynode arrays to form a discrete dynode electron multiplier (DDEM).
6. The method of claim 1 wherein growing a native oxide at a surface of least a portion of the each of the first and the second one dynode arrays includes growing the native oxide with an inherent dopant in the native oxide.
7. A device, comprising: a substrate; a first dynode array comprising a portion of a block of metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper, the first dynode array attached to the substrate, and each dynode of the first dynode array having a respective first face; a second dynode array comprising a portion of a block of metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper, the second dynode array attached to the substrate and each dynode of the second dynode array having a respective second face, the second face opposed across a path from the first face of a corresponding one of the dynodes of the first dynode array; a native oxide thermally grown directly on the first face of the dynodes of the first dynode array and grown directly on the second face of the dynodes of the second dynode arrays.
8. The device of claim 7 wherein the at least one dynode is devoid of any deposited secondary electrons (SEE) coating.
9. The device of claim 8 wherein the native oxide includes an intrinsic dopant.
10. The device of claim 9 wherein the at least one dynode has a higher secondary electron yield than an aluminum oxide.
11. The device of claim 7, further comprising: a printed circuit board detachably physically coupled as a side wall to the first and the second dynode arrays to form a discrete dynode electron multiplier (DDEM).
12.-17. (canceled)
18. The method of claim 1, further comprising: actively doping the native oxide.
19. The method of claim 1 wherein growing a native oxide at a surface of least a portion of the at least one dynode includes growing one of an Al2O3 or a BeO layer directly from the base metal.
20.-53. (canceled)
54. A method of forming a device, the method comprising: providing a single unitary piece of a base metal selected from the group consisting of aluminum, aluminum alloy, and beryllium copper; machining the piece of the base metal to form at least one dynode array having a first end and a second end, the second end opposed from the first end across a length of the dynode array, the dynode array comprising a plurality of dynodes arrayed along the length of the dynode array, each of the dynodes physically coupled to a successive one of the dynodes in the array via a metallic interconnect that fixes a position of each of the dynodes with respect to the successive one of the dynodes in the array; and securing an insulator to the dynodes of the dynode array; removing the metallic interconnect after securing an insulator to the dynodes of the dynode array.
55. The method of claim 54 wherein machining the piece of the base metal includes machining the piece of the base metal to form the metallic interconnect.
56. The method of claim 54 wherein machining the piece of the base metal includes machining the piece of the base metal to form a pair of the metallic interconnects, the metallic interconnects each extending along the length of the dynode array.
57. The method of claim 54, further comprising: growing a native oxide at a surface of least a portion of the dynodes, the native oxide comprising a secondary electron emissive layer.
58. The method of claim 57 wherein growing a native oxide at a surface of least a portion of the at least one dynode includes heating the machined piece of metal in a presence of oxygen.
59. The method of claim 57 wherein growing a native oxide at a surface of least a portion of the at least one dynode includes growing the native oxide without depositing any oxide on the surface of the at least one dynode.
60. The method of claim 57 wherein growing a native oxide at a surface of least a portion of the at least one dynode includes growing one of an Al2O3 or a BeO layer directly from the base metal.
Description
BRIEF DESCRIPTION OF DRAWINGS
[0036] FIG. 1A is an isometric view of a conventional discrete dynode electron multiplier (DDEM).
[0037] FIG. 1B is a representative cross-sectional view of the conventional DDEM of FIG. 1A.
[0038] FIG. 2A is an isometric view of a dynode array in one unit packaging of a DDEM according to at least a first implementation of the invention.
[0039] FIG. 2B is an isometric exploded view of the DDEM of FIG. 2A, better illustrating two components, a side wall and a wholly integrated dynode array made of aluminum, its alloys or BeCu block, bonded to a ceramic, DBC, or DBA frame and machined to form individual dynode.
[0040] FIG. 2C is a cross-sectional view of the DDEM of FIG. 2A, built on ceramic, DBC, or DBA frame with a cut out.
[0041] FIG. 3A is an isometric view of a DDEM according to at least a second implementation of the invention.
[0042] FIG. 3B is an exploded view of the DDEM of FIG. 3A, better illustrating various components, including a side wall, an ion optic structure, and integrated emissive dynodes united with a ceramic, DBC, or DBA frame prior to the shaping.
[0043] FIG. 3C is a first cross-sectional view of the DDEM of FIG. 3A, showing an ion optic structure separated from an integrated emissive dynode.
[0044] FIG. 3D is a second cross-sectional view of the DDEM of FIG. 3A, showing the integrated individual emissive dynode on a ceramic, DBC OR DBA frame.
[0045] FIG. 4A is an isometric view of a DDEM according to at least a third implementation of the invention, built by bonding aluminum, aluminum alloys, or BeCu to two ceramic, DBC, or DBA plates.
[0046] FIG. 4B is an exploded view of the DDEM of FIG. 4A, showing various components including a side wall carrying or containing an electrical network, an optional side wall for structural support, two dynode arrays held by a ceramic, DBC, or DBA plate, the two dynode arrays which constitute an upper and lower dynode array, respectively.
[0047] FIG. 4C is a cross-sectional view of the DDEM of FIG. 4A, better showing the upper and lower dynode arrays where the ion optic structure is integrated to the emissive dynode part.
[0048] FIG. 5A is an isometric view of a DDEM according to at least a third implementation of the invention, constructed by separation an ion optic structure from an emissive dynode.
[0049] FIG. 5B is an exploded view of the DDEM of FIG. 5A, better illustrating various components, including two side walls, an ion optic structure, and two integrated emissive dynode arrays, each of the emissive dynode arrays held by a respective ceramic, DBC, or DBA plate.
[0050] FIG. 5C is a first cross sectional view of the DDEM of FIG. 5A, better illustrating separated ion optic structure and two emissive dynode arrays (e.g., upper emissive dynode array, lower emissive dynode array).
[0051] FIG. 5D is a second cross sectional view of the DDEM of FIG. 5A, better illustrating the upper and lower emissive dynode arrays.
[0052] FIG. 6A is a side elevational view of an assembly of two dynode arrays, assembled from machined individual dynodes with ion optics integrated to the emissive part.
[0053] FIG. 6B is a partially exploded view of the assembly of dynode arrays of FIG. 6A, showing a “shish kebab” or “skewered” configuration, where two insulator rods are used and an electrical insulating spacer is used between successive dynodes for electrical biasing.
[0054] FIG. 6C is an isometric view of the assembly dynode arrays of FIG. 6B.
[0055] FIG. 7A is an isometric view of a cylindrical DDEM having a cylindrically symmetry DDEM for high performance particle detection, according to at least one illustrated implementation.
[0056] FIG. 7B is a cross sectional view of the cylindrical DDEM of FIG. 7A, showing an outer and an inner dynode machined from aluminum (Al), aluminum alloys, or beryllium copper (BeCu) blocks.
[0057] FIG. 7C is an isometric view of machined outer and inner dynodes for use as part of the cylindrical DDEM of FIG. 7A.
[0058] FIG. 7D is a cross sectional view of the outer and inner dynode of FIG. 7C.
[0059] FIG. 8A is an isometric view of a cylindrical DDEM installed in a cylindrical envelope containing a cylindrical symmetry high energy dynode (HED), according to at least one illustrated embodiment.
[0060] FIG. 8B is a cross sectional view of the cylindrical DDEM of FIG. 8A.
[0061] FIG. 8C is another cross sectional view of the cylindrical DDEM with the HED of FIG. 8A.
[0062] FIGS. 9A, 9B and 9C are cross sectional views illustrating manufacture of an individual dynode using inter metallic material (IMM) at three successive manufacturing operations, respectively, according to at least one illustrated implementation.
DESCRIPTION OF THE EMBODIMENTS
[0063] In at least one implementation, a fabrication of a discrete dynode electron multiplier (DDEM) starts with bonding a metal block of aluminum (Al), Al alloys or beryllium copper (BeCu) to a single ceramic, direct bonded copper (DBC) or direct bonded aluminum (DBA) plate with a cut out or opening. This cut out or opening provides an access for dynode machining for formation of geometrical ion optics on the metal block. Electric Discharge Machine (EDM) is suitable for creating the cut out due to its high precision and due to its lack of stress on the metal during the cutting process. In this machining stage, the dynode ion optics parts, the input end, the anode, the intended dynode region for native grown SEE, the electrical isolation inter-spacing between dynodes, and the critical spacing between upper and lower dynode arrays are established. (The terms “upper” and “lower” are used herein and in the claims only for convenience, to refer to the relative positions of elements within a given illustration, based on the orientation of a given drawing sheet. Such is not intended and should not be interpreted as requiring one element to be positioned relatively above or below another element.) The metal block of Al, Al alloys, or BeCu may be pre-machined to accommodate certain features to simplify the EDM cutting and the bonding process. Various bonding process may be suitable, for example brazing, spot welding (laser or resistive type), or soldering.
[0064] FIGS. 2A-2C show a DDEM 200, according to at least a first illustrated implementation. In the DDEM 200 all individual dynodes 21 (only one called out), input end 23, and anode 24 are unified by a frame 22. The frame 22 advantageously employs a single substrate, for example ceramic substrate or plate, direct bonded copper (DBC) substrate or plate, or direct bonded aluminum (DBA) substrate or plate. Various components are advantageously integrated into a single unit dynode component 200a that includes upper and lower dynode arrays 200b, 200c, best illustrated in FIG. 2B. This construction advantageously, employs only two parts (i.e., the single unit or dynode component 200 and side wall 25 to build the DDEM 200. Side wall 25 provides an anode connection 26 and a high voltage connection or node 27 for electrical biasing.
[0065] A fabrication of the DIEM 200 starts with a block of a metal on which a native oxide can be grown (e.g., Al, Al alloys or BeCu). The metal block, which may be a single metal block, is physically coupled or attached to a single ceramic, DBC, or DBA substrate or plate that serves as the frame 22. The metal block is physically coupled or attached to a single ceramic, DBC, or DBA substrate or plate via any variety of techniques or structures, including but not limited to soldering, bonding, adhering (e.g., high temperature adhesive), clamping, riveting, fastening, etc. The two dynode arrays 200b, 200c are then machined from the metal block, preferably from a single metal block. This inherently self-aligns, self-positions, self-orients, self-spaces, and otherwise fixes the alignment, position, orientation and spacing between the dynodes 21 of each dynode array 200b, 200c fixed relative to one another. The machining may take a variety of forms, although EDM may be preferred. The resulting structure is then exposed to oxygen or an oxygen containing environment and heated to grow a native oxide on the exposed surfaces of the dynodes 21 of both dynode arrays 200b, 200c. Finally, the side wall may be mounted to the resultant single unit dynode component 200a.
[0066] The construction of the single unit dynode component 200a is highly advantageous in manufacturing, for example, with the alignment, position, orientation and spacing between the dynodes 21 of each dynode array 200b, 200c fixed relative to one another by being manufactured from a single block of material, eliminating the later need for alignment. The EDM the dynodes 21 of both dynode arrays 200b, 200c from a single block of material ensures that all dimensions are precise, including spacing between the upper and lower arrays. Such is made possible by the technique of growing a native oxide grown on the structure, whereas metallization of the opposed faces of the dynodes 21 of the opposed dynode arrays 200b, 200c is impractical. In this respect, metallization typically employs a beam which should face (e.g., perpendicular to) the surface being metallized. This is impractical or even impossible given the tight spacing between the opposed dynode arrays 200b, 200c when machined from a single piece of material or when two opposed dynodes, one from each dynode array 200b, 200c, are machined from a single piece of material. This may also advantageously avoid any need to form slots in the insulative substrate (e.g., single ceramic, DBC, or DBA substrate or plate).
[0067] FIG. 2C shows the single unit dynode component 200, where individual dynodes 21, input end 23, and anode 24 are held together by the frame 22 with inter-spacing between the dynodes 21 of the upper array and respective ones of the dynodes 28 of the lower array inherently fixed by the machining process rather than via a subsequent assembly operation. Note that geometrical shapes are exemplary, and other shapes may be employed. The construction of the DDEM 200 illustrated in FIGS. 2A-2C offers flexibility in cutting of dynode shapes. Consequently, a wide range of dynode designs can be easily achieved, for example an electron cloud splitter. The shape of the dynodes in an array or between arrays can vary from dynode to dynode based on one or more desired operational characteristics.
[0068] The dynodes 21, 28 of the integrated single unit dynode component 200a can be can be oxidized to generate a native oxide SEE. For example, the integrated single unit dynode component 200 can be subjected to a heating in air process to generate the native oxide SEE (e.g., Al2O3 from base metal Al). After oxidation, the integrated single unit dynode component 200a can be assembled together with a side wall 25 to form the DDEM 200. The elimination of a coating or process operation (e.g., deposition) allows reduction of a spacing between the upper array and lower array, advantageously facilitating miniaturization of the DDEM 200. This approach which employs generation of a native oxide SEE advantageously avoids a costly and complicated SEE coating process operation.
[0069] FIGS. 3A-3D show a DDEM 300, according to at least one illustrated implementation. A fabrication of the DDEM 300 starts with a metal block of Al, Al alloys or BeCu, which is bonded to a single ceramic, DBC, or DBA plate that serves as a frame 32. The DDEM 300 may be similar in some respects to the DDEM 300 described with respect to FIGS. 2A-2C, except that the ion optic structure, including input end and anode, is separated from the dynode SEE region. This illustration shows the design flexibility based on the invention. As best illustrated in FIG. 3B, the dynode SEE part 31 is integrated to the frame 32 and advantageously becomes a cartridge 300a for consumable replacement as the dynode surface ages due to usage. The dynode SEE part 31 is oxidized to generate native SEE oxide (e.g., Al2O3 from the Al) dynode raw material. In at least some implementations, the ion optic structure 37 is anchored to the side wall 35 carrying or bearing an electrical network 30. For example, the ion optic structure 37 along with input end 33 and anode 34 is held by the side wall 35 with a resistive network including anode 36 and high voltage connection or node 37. The ion optic structure 37 part will typically not need replacement due to expected usage, unless damaged. If desired, input end 33 and anode 34 structure could be unified into the cartridge.
[0070] FIG. 3C shows upper and lower arrays of dynodes 21, 28, with native SEE oxide 31 held by a frame 32, ion optic structure 36, input end 33, and anode 34. The overall function is the same as of the wholly integrated dynode depicted in FIG. 2C. FIG. 3D shows a cartridge consisting of upper and lower arrays of dynodes 21, 28, with native SEE 31, and the frame 32. This part will be the replacement or consumable part for the DDEM 300.
[0071] FIGS. 4A-C show a DDEM 400, according to another illustrated implementation. A fabrication of the DDEM 400 starts with metal blocks of Al, Al alloys, or BeCu, which are then bonded, sandwiched between two plates (e.g., ceramic, DBC or DBA plates). This substrate configuration will generate a pair (upper and lower) of dynode arrays, including input end and anode part as commonly used in the DDEMs. A single dynode array can be created by the metal block and a ceramic based plate substrate configuration, if preferred. Electric Discharge Machine (EDM) operations (e.g., cutting) are the recommended dynode shaping cutting technique for the reasons mentioned above. The metal block of Al, Al alloys, or BeCu may be pre-machined to accommodate some features, for example to simplify the EDM cutting operations and the bonding process. At least one side wall carrying; or bearing an electrical network is advantageously used to integrate the upper and lower dynode arrays. The spacing between the two dynode arrays (e.g., upper and lower dynode arrays) is fixed though this side wall. The side wall is typically comprised of a ceramic plate. A second side wall may be employed to, for example, provide a more stable mechanical support.
[0072] As best illustrated in FIG. 4B a first plate 42 (e.g., ceramic, DBC, or DBA plate) holds or carries anode 44 and individual dynodes 41 (constituting upper dynode array). Similarly a second plate 49 (e.g., ceramic, DBC, or DBA plate) holds or carries an input end 43 and individual dynodes 48 (constituting lower dynode array). This dynode structure is exemplary, and a virtually unlimited variety of other shapes or configurations can be. As with the previously described implementations, the structure of FIG. 4B may be subject to an oxidation processor to generate an SEE native grown oxide, for example by heating of the Al, Al alloys, or BeCu dynode material in the presence of oxygen.
[0073] Side wall 45 carries an electric network 30, anode connection 46, and a high voltage node or point of contact 47 and provides the structural integrity of the DDEM 400. A second side wail 40 may be included for additional mechanical stability. As best illustrated in FIG. 4C an inter-spacing between the dynodes of the upper and lower arrays of dynodes is establishing by the cut formed during machining (e.g., EDM) of the dynode shapes. The distance between the upper and lower arrays of dynodes is determined by the side walls 45, 40.
[0074] This form of DDEM 400 where two ceramic, DBC, or DBA plates are used to hold the upper and lower arrays of dynodes can be built by separating the dynode ion optic structure, including input end and anode, from the dynode SEE region. The dynode SEE region component held by the plate constitutes a cartridge, therefore two cartridges are employed to form the illustrated DDEM 400. As will be apparent from this disclosure, the ion optic structure is integrated into at least one side wall 45, 40, the side wall 45 carrying an electrical network 30. The second side wall 40 may help to stabilize the mechanical structure.
[0075] FIGS. 5A-5D show a fully assembled DDEM 500, accord to at least one illustrated implementation. As best illustrated in FIG. 5B, the DDEM 500 comprises an upper cartridge 502 and a lower cartridge 501, an ion optic structure 503 including input end and anode end, and two side walls 504 and 505 that hold the ion optic structure 503. The oxidation process to grow SEE native oxide from the Al, Al alloys, or BeCu takes place after formation of the upper and the lower cartridges 502, 501. In practice, the ion optic structure can be bonded to a side wall 504 or the two side walls 504, 505. As best illustrated in FIG. 5C the ion optics structure 503 can be separated from the SEE grown oxide dynode regions 53, 54. Upper and lower cartridges 502, 501 comprise plates 51, 52 (e.g., ceramic, DBC or DBA plate) with individual SEE dynode regions 53, 54. Ion optic 55, input end 56, and anode 57 are held by the two side walls 504, 505. Alternatively, input end 56 and anode 57 could be integrated to one or both of the cartridges 501, 502. As best illustrated in FIG. 5D, the upper cartridge 502 and lower cartridge 501 can each serve as a spare or replacement part, to be replaced as the DDEM 500 ages. These cartridge arrangements will lower the cost of replacement for the end users.
[0076] Individual dynodes which include both an ion optic feature and SEE native grown oxide can be manually assembled to create an array of dynodes. This method still offers more advantages as compared to conventional approaches where each individual dynode is formed from metal sheet bending techniques. For example, machining offers virtually endless flexibility in dynode shaping as compare to metal bending, offers increased precision and higher tolerances in machining than metal bending, offers more flexible in designing the assembly process, etc.
[0077] FIGS. 6A-6C show an upper array of dynodes 600 and lower array of dynodes 601 opposed from one another across a gap 603, according to at least one illustrated implementation. Each array of dynodes 600, 601 includes a respective plurality of machined individual dynodes 61, 62 made of Al, Al alloys, or BeCu. An inter-spacing is determined by the dimensions of an electrical insulator spacer 65 (two called out in FIG. 6B). It is understood that an electrical network (not shown in FIG. 6A) is employed in the assembly to form a DDEM device. Input end 63 and anode 64 can be integrated to side walls (not shown in FIG. 6A) or can be machined from a metallic block in a same or similar fashion as machining of the individual dynodes 600, 601.
[0078] As best illustrated in FIG. 6B, the components can be assembled in “shish kebab” or “skewered” fashion. One or more Insulating rods 66 (two called out in FIG. 6B) is used to hold the dynodes 62, 61 together as respective upper and lower dynode arrays 601, 600. The insulating rod 66 may, for example, pass or extend through a throughhole 67 (only one called out in FIG. 6B) formed through each of the of the individual dynodes 62, 61. An oxidation process operation to generate or grow a native oxide SEE is performed prior to assembling the components. The assembled dynode upper and lower arrays 601, 602 are illustrated in FIG. 6C.
[0079] Due to the flexibility in machining dynodes from Al, Al alloys, or BeCu material, where native oxide SEE can be grown from the base metal, this technology enables the formation of a cylindrically symmetry dynode or array of cylindrically symmetry dynodes. The benefits of the cylindrical dynode shape have been mentioned herein.
[0080] FIGS. 7A-7D show a cylindrical symmetry discrete dynode electron multiplier (DDEM) 700, according to at least one illustrated implementation. The cylindrical symmetry DDEM 700 includes an of outer dynode 71 and an inner dynode 72. It is understood other support structures may be employed to assemble these individual cylindrical symmetry dynodes 71, 72. Thus, the implementation illustrated in FIG. 7A is exemplary of a DDEM 700 with a cylindrical symmetry dynode shape, and other implementations may be employed.
[0081] As best illustrated in FIG. 7B, the cylindrical symmetry DDEM 700 includes an outer dynode 71, inner dynode 72, input end 73, anode 74, and ion beam deflector 75. An oxidation process operation to grow a native oxide SEE (e.g., Al2O3 from Al) from the dynode raw material is performed prior to assembling. FIGS. 7C and 7D better illustrate the axial spatial relationship between the outer and the inner dynodes 71, 72 in the cylindrical symmetry dynode assembly 700. For example, the outer dynode 71 may be radially spaced with respect to a respective inner dynode 72, both for example aligned along a same longitudinal axis such that the outer and inner dynodes 71,72 are concentric with one another. Many cylindrical symmetry dynode shapes can be implemented according to desired operational characteristics. As in other implementations, the cylindrical symmetry dynodes can be formed by machining the dynodes from blocks of Al, Al alloys or BeCu, with subsequent formation of native oxides which possess good secondary electron emission (SEE) properties for the electron multiplication process.
[0082] In some implementations, a high energy cylindrical dynode can simply be added before an input end of the cylindrical symmetry DDEM 700. For example, FIGS. 8A-8C show a device 800 that combines a high energy dynode (HED) 802 with a cylindrical symmetry DDEM 801 and a cylindrical envelope 807, according to at least one illustrated implementation. In operation, a charged particle enters the HED input 805, attracted to HED 802 generating secondary charged particles. The charged particles are detected via the HED 802 prior to the electron multiplication by the cylindrical symmetry DDEM 801. These charged particles are focused to an input end 803 of the cylindrical symmetry DDEM 801 inside the cylindrical envelope 807. The path of the charged particle along with secondary emission arriving at the cylindrical symmetry DDEM 801 is illustrated by line 806 (FIG. 8C). After electron multiplication process, the electron cloud is collected at the anode 804.
[0083] FIGS. 9A, 9B and 9C are cross sectional views illustrating manufacture of an individual dynodes 901 using inter metallic material (IMM) at three successive manufacturing operations, respectively, according to at least one illustrated implementation.
[0084] Individual dynodes 901, Inter-metallic material (IMM) 902, input end 903, and output end 904 are machined from a single unitary block of metal, for example aluminum, aluminum alloys, or BeCu. Each individual dynode 901 in the array of dynodes 901 is connected to one another by IMM 902. Such advantageously high precision in inter-dynode position, and also advantageously eases DDEM assembling process. The design shown in FIGS. 9A-9B serves as an example structure and method of fabrication or manufacture.
[0085] As best illustrated in FIG. 9B, after SEE emissive layer activation, an electrical insulator material 905 is installed in such a way to secure each individual dynodes 901 while IMM 902 is in place to maintain the high precision inter dynode position. The electrical insulator material 905 may take a variety of forms, for example a ceramic, glass or plastic. The securing can be accomplished by, for example, adhesive bonding (PABA).
[0086] As best illustrated in FIG. 9C, at final assembly of DDEM, or just after insertion of insulator 905, the IMM 902 can be removed. The electrical insulator 905 replaces the functionality previously served by the IMM 902. The IMM 902 constitutes a sacrificial material. This process electrically separates each individual dynode 901 from the other dynodes 901 in the array of DDEM.
[0087] This method of assembling is not limited to integrated native oxide devices (INODs), but it can be applied to other metals such as stainless steel where SEE layer can be added as required.
[0088] This application incorporates by reference the teachings of U.S. patent application Ser. No. 62/716,185, filed Aug. 8, 2018, in its entirety.
[0089] From all of the exemplary disclosed DDEM fabrication implementations described herein, it is evident that this fundamental technology offers advantages for flexibility in dynode shaping with high precision fit for implementing various designs driven by specific end use applications and by manufacturability considerations.
