Method of providing a plurality of through-holes in a layer of structural material

Abstract

A method of providing a MEMS device including a through-hole in a layer of structural material using a multitude of MEMS method steps. A versatile method to create a through-hole, in particular a multitude thereof, involves a step of exposing a polymeric layer of positive photoresist in a direction from the outer surface of the positive photoresist to light resulting in an exposed layer of positive photoresist including relatively strongly depolymerized positive photoresist in the top section of a recess while leaving relatively less strongly depolymerized positive photoresist in the bottom section of the recess.

Claims

1. A method of providing a MEMS device comprising a through-hole in a layer of structural material using MEMS method steps, wherein an intermediate product is subjected to a plurality of MEMS method steps, the intermediate product defining a first main side and a second main side, and at least initially comprising a substrate body having a recess at the first main side, the recess comprising a bottom section and a top section, wherein the bottom section is a section of the recess that is closest to the second main side and the top section is a section of the recess that is closest to the first main side; wherein the method steps comprise the steps of: providing the first main side of the intermediate substrate with a polymeric layer of positive photoresist, said polymeric layer having an outer surface facing away from the body and an inner surface facing the body, exposing the polymeric layer of positive photoresist in a direction from the outer surface of the positive photoresist towards the body of the intermediate substrate to light resulting in an exposed layer of positive photoresist comprising: a depolymerized positive photoresist in the top section of the recess while leaving a depolymerized positive photoresist in the bottom section of the recess that is less strongly depolymerized than the depolymerized positive photoresist in the top section of the recess; removing the depolymerized positive photoresist in the top section of the recess while leaving the less strongly depolymerized positive photoresist in the bottom section of the recess of the body so as to provide a protected area; providing structural material at the first main side and outside the protected area; and etching at the protected area to provide the through-hole in the structural material.

2. The method according to claim 1, wherein the substrate body is a crystalline substrate.

3. The method according to claim 1, wherein the through-hole is a through-hole in a tip of a cantilever of a probe.

4. The method according to claim 1, wherein the intermediate product comprises: the substrate body comprising a body material, and a first layer of a first material different from the body material at the first main side; wherein after the step of removing the depolymerized positive photoresist in the top section of the recess while leaving the less strongly depolymerized positive photoresist in the bottom section of the recess of the body, the first layer is etched using the less strongly depolymerized photoresist as a mask leaving a first area of first material on top of exposed body material, the step of providing structural material at the first main side comprises growing the layer of structural material by converting exposed body material of the substrate body into structural material of a composition different from the substrate body material using at least one of the remaining first material and the less strongly depolymerized photoresist as a mask, and the step of etching the protected area comprises removing said remaining first material.

5. The method according to claim 1, wherein substrate body material is removed at the location of the recess so as to expose the structural material at the through-hole.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The present invention will now be illustrated with reference to the drawing where

(2) FIG. 1 shows a probe as can be manufactured using the method according to the invention, in top view (top) and cross-sectional view (bottom), both views being vertically aligned; and

(3) FIG. 2A to FIG. 2K illustrate the manufacture of a cantilevered probe according to FIG. 1 in top view (top) and cross-sectional view (bottom), both views being vertically aligned.

DETAILED DESCRIPTION OF THE INVENTION

(4) FIG. 1 shows a probe 100 as can be manufactured using the method according to the invention in top view (top) and cross-sectional view (bottom), both views being vertically aligned.

(5) The probe 100 comprises a probe body section 110 and a cantilever 120. The cantilever 120 has a proximal end 121 connected to the probe body section 110 and a distal cantilever end 122.

(6) The distal cantilever end 122 comprises a pyramidal tip 130 comprising a pyramidal tip end 131 comprising a central through-hole 132. This probe is described in “Nanoscale dispensing of liquids through cantilevered probes” (A. Meister et al. Microelectronic Engineering 67-68 (2003) 644-650) and its manufacture is replicated using the method according to the present invention, as will be illustrated below.

(7) The method according to the invention will now be illustrated using FIG. 2A to FIG. 2K, which show in top view and cross-sectional view a method of manufacturing the probe 100 of FIG. 1. The method according to the present invention allows for a multitude of through-holes 132 and hence probes 100 to be manufactured at once, but the figures will show one probe 100 in the making only.

(8) A silicon wafer 200 (a crystalline substrate, which will provide body 260) having a thickness of 380 um is shown (FIG. 2A) in top view. The silicon wafer 200 is of (1,0,0) silicon. If a pyramidal tip with three faces is desired, (1,1,1) silicon may be used instead.

(9) Using a mask, pyramidal recesses 210 (further on called pits; only one shown, singulars are used in the remainder of the figure description) is etched by wet anisotropic etching of the silicon using 25% KOH (FIG. 2B). The pyramidal pit 210 is 10 um by 10 um.

(10) A thin layer of first material 220 (300 nm), here silicon nitride, is deposited (FIG. 2C) on the silicon wafer 200 comprising a pyramidal pit 210 (FIG. 2C) using Low Pressure Chemical Deposition (LPCVD) so as to result in an intermediate product, having a first main side 201 and a second main side 202.

(11) The intermediate product is provided with a layer of positive photoresist (OiR 907-17 photoresist available from FujiFilm), that polymerizes so as to yield a polymerized layer of positive photoresist 290 (FIG. 2D). It has an outer surface 291 and an inner surface 292 adjacent to the first layer.

(12) The polymerized layer is subjected to light at the first main side 201 for a duration and with an intensity that causes depolymerization of the positive photoresist, exposing and thus depolymerizing the outer surface 291 more strongly than photoresist further from the outer surface 291, and in particular the photoresist in the bottom section of the pit 210, in accordance with physical law of the absorption of light. When the more strongly depolymerized positive photoresist is removed by development in an aqueous alkaline solution (OPD 4262 developer available from FujiFilm), relatively less strongly depolymerized positive photoresist 290′ remains in the bottom section of the pit 210 (FIG. 2E) closest to the second main side 202.

(13) The silicon nitride of the first layer 220 is etched away using Reactive Ion Etching (RIE), using the remaining relatively less strongly depolymerized photoresist 290′ as a mask.

(14) The less strongly depolymerized positive photoresist is removed using plasma etching (FIG. 2G).

(15) The silicon of the body is oxidised (wet oxidation at 1000° C.), using the silicon nitride areas as a mask (FIG. 2H), resulting in a wall layer 230 of silicon dioxide.

(16) Silicon nitride is selectively removed by wet chemical etching (hot phosphoric acid), resulting in hole 231 in the wall layer 230 (FIG. 2I).

(17) Regular patterning using RIE results in a probe layout.

(18) After anodic bonding of a pre-diced glass wafer 250 (FIG. 2K), the bulk silicon of the body 260 is removed by wet chemical etching. Etching with hot Tetramethylammonium hydroxide (TMAH) solution results in the probe 100, shown in FIG. 1, with through-hole 132.

(19) The present invention can be varied with in the scope of the appended claims. For example, an intermediate body comprising an etched first layer exposing the substrate body material may be provided with a structural material by deposition, allowing a greater choice of structural material as it does not depend on the chemical conversion of the substrate body material. The structural material will have a thickness that is less than the thickness of the first layer, allowing the first layer to be etched chemically so as to form the through-hole.