Method of debonding work-carrier pair with thin devices
11177153 ยท 2021-11-16
Assignee
Inventors
Cpc classification
Y10T156/1967
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T156/1917
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01L2221/6834
ELECTRICITY
B32B38/10
PERFORMING OPERATIONS; TRANSPORTING
H01L2221/68318
ELECTRICITY
Y10T156/1111
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T156/1184
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10T156/1158
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
International classification
Abstract
Disclosed is a thin subject assisted debonding method for separating temporarily bonded workpiece-carrier pair. The thin subject can be a thin wire, or thin filament, or thin blade. The thin subject can be applied between the workpiece and carrier pair in association with laser debonding or mechanical debonding to provide well controlled and targeted wedging function to the delaminating temporary adhesive and its adjacent substrate to which it is separating from. The workpiece can be a semiconductor wafer that has been thinned and processed, and the carrier can be a semiconductor non-device wafer or any other rigid substrate such as a glass wafer or panel. The application of a thin subject between the workpiece and carrier during debonding provides the advantage of high throughput and low defect rate.
Claims
1. A method of manufacturing a semiconductor device, comprising: providing a first substrate bonded to a second substrate by an adhesive material forming an adhesive layer therebetween, wherein the first substrate includes a semiconductor wafer workpiece with at least one integrated circuit disposed on a surface thereof, wherein the adhesive layer comprises a laser decomposable layer; applying an electromagnetic energy to the laser decomposable layer to decompose the laser decomposable layer; and while applying the electromagnetic energy, actuating an external device into direct physical contact with the entire adhesive layer along a direction substantially parallel to the surface of the first substrate and concomitantly moving the external device in a reciprocating saw-like motion to facilitate separation of the first substrate from the second substrate, wherein the external device is a polymer wire having a thickness of less than 1 mm.
2. The method of claim 1, further comprising: exposing the first substrate and the second substrate to a chemical solvent operable to dissolve the adhesive material.
3. The method of claim 1, wherein the polymer wire includes a transverse section having at least one of a triangular, circular, oval, rectangular, and square shape.
4. The method of claim 1, wherein the polymer wire includes a transverse section having a saw-tooth shape.
5. The method of claim 1, wherein the polymer wire includes a dental floss.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
(12) Disclosed are methods of separating a temporary adhesive bonded carrier-workpiece pair with the use of a thin subject in association with laser debonding or mechanical debonding. This method can be used for processing various workpieces of: different shapes, e.g., round, rectangle, and square, among others; different materials, e.g., silicon, gallium arsenide, sapphire, glass, and metal, among others; different thicknesses, e.g., thick or thin; and different applications, e.g., optical lens, semiconductors, displays-LCD, and solar, among others. In some embodiments, the methods may be useful for debonding temporarily adhesive bonded semiconductor wafers that are used in wafer level packaging and 3D semiconductor wafer packaging (2.5D/3D).
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(19) In one embodiment, a method of manufacturing a semiconductor device includes: providing a first substrate bonded to a second substrate having an adhesive material therebetween, where the first substrate includes at least one integrated circuit disposed thereon, and separating the first substrate from the second substrate by actuating an external device into direct physical contact with the adhesive layer without the use of any additional mechanical or electromagnetic forces.
(20) In another embodiment, the providing step includes providing the first substrate including a device wafer workpiece, where the device wafer workpiece can be an optical lens, quartz, sapphire wafer, display glass, LED crystal, thin metal plate, thin membrane, thin film, silicon, polysilicon, silicon oxide, silicon-germanium, silicon nitride, gallium arsenide, gallium phosphide, alumina titanium carbide, silicon carbide, copper, aluminum, steel, gold, tungsten, tantalum, low-K dielectric, metal nitrides, metal alloys, silicide, and combinations thereof, and where the providing step includes the first substrate bonded to the second substrate, where the second substrate includes silicon, glass, quartz, sapphire, and combinations thereof.
(21) In one embodiment, the method further includes: concomitant to the separating step, applying a mechanical force to the at least one of the first substrate and the second substrate in a substantially vertical orientation to facilitate separation of the first substrate from the second substrate. In another embodiment, the method further includes: exposing the first substrate and the second substrate to a chemical solvent further operable to dissolving the adhesive material.
(22) In another embodiment, the method further includes: concomitant to the separating step, applying an electromagnetic force to the at least one of the first substrate, the second substrate, and the adhesive layer to facilitate separation of the first substrate from the second substrate. This will become more apparent in subsequent discussion.
(23) In one embodiment, the separating step includes actuating the external device in a reciprocating saw motion. In another embodiment, the separating step includes actuating the external device in the form of a blade or a wire, where the blade or the wire is made of at least one of ceramic, metal, metal composite, metal coated polymer, metal alloy, synthetic or natural polymer, or polymer composite. In some embodiments, the separating step includes actuating the external device in the form of a blade or a wire, where the blade or the wire has triangular, circular, oval, rectangular, or square cross-section profile transverse the wire or the blade. In other embodiments, the separating step includes actuating the external device in the form of a blade or a wire, where the blade or the wire has saw-tooth shaped cross-section profile along at least a portion of the wire or the blade. This will become more apparent in subsequent discussion.
(24) In some embodiments, the debonding methods involve the introduction of a thin subject 414 as shown in
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(30) In one embodiment, a method of manufacturing a semiconductor device includes: providing a first substrate bonded to a second substrate having an adhesive material therebetween, where the first substrate includes at least one integrated circuit disposed thereon; applying a mechanical force to the at least one of the first substrate and the second substrate in a substantially vertical orientation; and concomitant to the applying step, actuating an external device into direct physical contact with the adhesive layer along a substantially horizontal orientation to facilitate separation of the first substrate from the second substrate. In another embodiment, the method further includes: exposing the first substrate and the second substrate to a chemical solvent further operable to dissolving the adhesive material.
(31) In some embodiments, the separating step includes actuating the external device in the form of a blade or a wire in a reciprocating saw motion, where the blade or the wire is made of at least one of ceramic, metal, metal composite, metal coated polymer, metal alloy, synthetic or natural polymer, or polymer composite. In other embodiments, the separating step includes actuating the external device in the form of a blade or a wire in a reciprocating saw motion, where the blade or the wire has triangular, circular, oval, rectangular, or square cross-section profile transverse the wire or the blade. In some embodiments, the separating step includes actuating the external device in the form of a blade or a wire in a reciprocating saw motion, wherein the blade or the wire has saw-tooth shaped cross-section profile along at least a portion of the wire or the blade.
(32) In one embodiment, a method of manufacturing a semiconductor device includes: providing a first substrate bonded to a second substrate having an adhesive material therebetween, where the first substrate includes at least one integrated circuit disposed thereon; applying an electromagnetic force to the at least one of the first substrate, the second substrate, and the adhesive layer; and concomitant to the applying step, actuating an external device into direct physical contact with the adhesive layer along a substantially horizontal orientation to facilitate separation of the first substrate from the second substrate. In another embodiment, the method further includes: exposing the first substrate and the second substrate to a chemical solvent further operable to dissolving the adhesive material.
(33) In some embodiments, the separating step includes actuating the external device in the form of a blade or a wire in a reciprocating saw motion, where the blade or the wire is made of at least one of ceramic, metal, metal composite, metal coated polymer, metal alloy, synthetic or natural polymer, or polymer composite. In other embodiments, the separating step includes actuating the external device in the form of a blade or a wire in a reciprocating saw motion, where the blade or the wire has triangular, circular, oval, rectangular, or square cross-section profile transverse the wire or the blade. In some embodiments, the separating step includes actuating the external device in the form of a blade or a wire in a reciprocating saw motion, wherein the blade or the wire has saw-tooth shaped cross-section profile along at least a portion of the wire or the blade.
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(36) In the embodiments disclosed herein, the carrier 402, 602, 702 can be of the same material as the workpiece 404, 604, 704 of device wafer that has enough mechanical strength. In semiconductor wafer bonding and debonding processes, the carrier 402, 602, 702, can be made of silicon, glass, quartz, among other materials.
(37) The workpiece 404, 604, 704, also known as device wafer, can be optical lens, quartz, sapphire wafers, display glass, LED crystal, thin metal plate, thin membrane, film, among other materials. In some embodiments, the workpiece 404, 604, 704 can be made of silicon, polysilicon, silicon oxide, silicon-germanium, silicon nitride, gallium arsenide, gallium nitride, gallium phosphide, alumina titanium carbide, silicon carbon, among others. In other embodiments, the workpiece 404, 604, 704 can be metals such as copper, aluminum, steel, gold, tungsten, tantalum, low-K dielectrics, metal nitrides, metal alloys, silicides, or any combination thereof.
(38) The external device, also known as the thin subject 414, 614, 714, can be used to eliminate problems which are detrimental in mechanical debonding or laser debonding. This thin subject 414, 614, 714 can be inserted between the adhesive 406, 606, 706 and its debonding substrate, carrier 402, 602, 702 or device wafer 404, 604, 704, applies to all the adhesives that are suited for mechanical or laser debonding. The adhesives 406, 606, 706 and or their releasing layers 608, 708 can be polyimides, triazine-polymers, rubbers, cyclic olefins, polyacrylates, poly methyl methacrylate, polyurethanes, polycarbonates, polyethylene terephthalate, cellulose, polyesters, polystyrences, epoxies, silicones, polyamides, polysulfones, or combinations thereof, among other materials. The adhesives 406, 606, 706 can also be of formulations which use polymers as binders and may also contain fillers and additives such as antioxidants or plasticizers, among others.
(39) In some embodiments, the thin subject 414, 614, 714 can be in the form of thin wire, or thin filament, or thin blade, or thin saw shape, of varied cross-sectional areas, or combination thereof, among other polygonal shapes and figures. These components have to be relatively thin, so they do not cause mechanical damage to the device wafer 404, 604, 704 or carrier 402, 602, 702 during debonding. The wire, filament, or blade 414, 614, 714 can be made of synthetic polymers, natural polymers, metals, ceramics, or combinations thereof, among other materials. An example of the thin wire is a floss made of polymers. An example of combination is metal wire or blade coated with polymers. In some embodiments, the wires, filaments, or blades can be made of copper, gold, silver, stainless steel, tungsten, among other materials. The thickness of the wire, the filament, or the blade may be less than about 10 mm, or less than about 5 mm, or less than about 3 mm, or less than about 2 mm, or less than about 1 mm, among other suitable dimensions. In some embodiments, the thin subject 414, 614, 714, being wire, filament, or blade, may have their outer surfaces made of polymers so to avoid scratch or damage the carrier wafer or device wafer surfaces during mechanical movement. In other embodiments, the thin subjects 414, 614, 714 may be lubricated or self-lubricating. For example, thin subject of wire or blade made of fluorinated materials, silicones, polyolefins can be of low surface energy and thus offer lubricating function. Examples of polymer wires include dental floss or filaments made of polyamide, elastic synthetic polymer based on aliphatic or semi-aromatic polyamides, polytetrafluoroethylene (PTFE), synthetic fluoropolymer of tetrafluoroethylene, among other suitable polymers. In other embodiments, the wires, filaments, and blades can be made of other polymers such as polypropylene, silk, cotton, and other fluorinated polymers. Filament can be viewed as a special wire of single thread.
(40) The polymeric adhesives 406, 606, 706 can be applied to the wafers or workpieces 404, 604, 704 using spin coating, spray coating, slot coating, knife coating, and other available coating techniques from solutions. The polymeric adhesives 406, 606, 706 can also be applied in dry film lamination. The adhesives 406, 606, 706 should form as uniform films as possible. Bonding of device wafer 404, 604, 704 to carrier wafer 402, 602, 702 coated with adhesives 406, 606, 706 can be accomplished in suitable bonding machines.
(41) The adhesive bonded device wafer stack 410, 610, 710 with the support of carrier wafer can safely be subjected to thinning such as back-grinding and chemical-mechanical polishing (CMP). After thinning, other backside processing can be carried out too, such as TSV-formation, etching such as DRIE, metal and dielectric deposition, patterning (e.g., photolithography, via etching), plasma ash, bonding pads, passivating, annealing, and any combinations thereof. After these processes, the wafer device wafer stack 410, 610, 710 is ready to be debonded or separated from the carrier wafer and cleaned of the adhesive.
(42) As shown in
(43) In operation and in reference to
(44) In operation, the thin subject 414, 614, 714 is able to apply shear force uniformly to the adhesive debonding line. The thin subject 414, 614, 714 movement can follow the pattern of peeling and pulling in instances of mechanical debonding. The force of peeling can vary depending in accordance with the wedge effect of the thin subject 414, 614, 714. In some embodiments, the mechanical force of peeling and pulling to be applied during mechanical debonding can be reduced with the assistance of the thin subject 414, 614, 714. In other embodiments, the mechanical force of peeling and pulling to be applied during mechanical debonding can be zero. In other words, no peeling or pulling forces are needed if the thin subject 414, 614, 714 applies sufficient shear forces to the debonding process.
(45) In laser debonding, the thin subject can have a larger selection of movement patterns to facilitate the debonding process. The total area that will be exposed to laser debonding can also vary as a result of the thin subject application. For example, the laser scanned area can be much smaller with the application of thin subject than that with no application of the thin subject.
(46) Lubricants can also be applied to the thin subject or introduced to the debonding locations to help reduce friction and reduce localized heating. The lubricants can be inert to the adhesive to not cause adhesive to deform in unfavorable way. Common lubricants can be used if they are clean and do not contaminate the device wafer. For example, water or glycerol-based lubricants can be used. Some solvents such as NMP, PGMEA, alcohol, plasticizers, surfactants, hydrocarbons, silicone oil, fluorinated solvents, can be used to help reduce the thin subject surface friction force and eliminating localized heating if the adhesive is not soluble in the solvents.
(47) Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.