Encapsulation film and method for encapsulating organic electronic device using same

Abstract

Provided are an encapsulation film, a product for encapsulating an organic electronic device (OED) using the same, and a method of encapsulating an OED. The encapsulation film may effectively block moisture or oxygen permeating into the OED from an external environment, provide high reliability due to increases in a lifespan and durability of the OED, and minimize align errors in a process of attaching the film to a substrate.

Claims

1. An encapsulation film for encapsulating an organic electronic device, comprising: a releasing film; an encapsulating layer disposed on the releasing film, wherein the encapsulating layer comprises an encapsulating resin, and a cured product of the encapsulating layer has a tensile modulus of 0.001 to 500 MPa at room temperature; and a metal layer disposed on the encapsulating layer, wherein the encapsulation layer encapsulates an entire surface of the organic electronic device.

2. The encapsulation film according to claim 1, wherein the metal layer has a thermal conductivity of 50 W/mK or more.

3. The encapsulation film according to claim 1, wherein the encapsulating resin is a styrene-based resin, a polyolefin-based resin, a thermoplastic elastomer, a polyoxyalkylene-based resin, a polyester-based resin, a polyvinylchloride-based resin, a polycarbonate-based resin, a polyphenylenesulfide-based resin, a mixture of hydrocarbon, a polyamide-based resin, an acrylate-based resin, an epoxy-based resin, a silicon-based resin, a fluorine-based resin, or a mixture thereof.

4. The encapsulation film according to claim 1, wherein the encapsulating layer further comprises a moisture adsorbent.

5. The encapsulation film according to claim 1, wherein the metal layer comprises any one of a metal oxide, a metal nitride, a metal carbide, a metal oxynitride, a metal oxyboride, and a mixture thereof.

6. The encapsulation film according to claim 5, wherein the metal layer comprises any one of silicon oxide, aluminum oxide, titanium oxide, indium oxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide, niobium oxide, and a mixture thereof.

7. The encapsulation film according to claim 1, wherein the metal layer further comprises a polymer layer.

8. The encapsulation film according to claim 7, wherein the polymer layer comprises a material selected from the group consisting of polyethyleneterephthalate, polytetrafluoroethylene, polyethylene, polypropylene, polybutene, polybutadiene, a vinyl chloride copolymer, polyurethane, ethylene-vinyl acetate, an ethylene-propylene copolymer, an ethylene-ethyl acrylate copolymer, an ethylene-methyl acrylate copolymer, polyimide, nylon, and a combination thereof.

9. The encapsulation film according to claim 1, wherein the encapsulating layer is formed in a single layer or at least two layers.

10. The encapsulation film according to claim 9, wherein when the encapsulating layer is formed in at least two layers, at least one layer has a tensile modulus of 0.001 to 500 MPa at room temperature.

11. The encapsulation film according to claim 1, wherein the encapsulating resin comprises a curable resin.

12. The encapsulation film according to claim 11, wherein the curable resin comprises at least one curable functional group selected from a glycidyl group, an isocyanate group, a hydroxyl group, a carboxyl group, an amide group, an epoxide group, a cyclic ether group, a sulfide group, an acetal group, and a lactone group.

13. The encapsulation film according to claim 11, wherein the curable resin is an epoxy resin comprising a cyclic structure in a molecular structure.

14. The encapsulation film according to claim 11, wherein the curable resin is a silane-modified epoxy resin.

15. A product for encapsulating an organic electronic device, comprising: a substrate; an organic electronic device formed on the substrate; and the encapsulation film according to claim 1 to encapsulate the organic electronic device, wherein an encapsulating layer of the encapsulation film is attached to an entire surface of the organic electronic device.

16. The product according to claim 15, wherein the organic electronic device is an organic light emitting diode.

17. A method of encapsulating an organic electronic device, comprising: applying an encapsulating layer of the encapsulation film according to claim 1 to a substrate on which an organic electronic device is formed to be attached to an entire surface of the organic electronic device; and curing the encapsulating layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1 and 2 are cross-sectional views of an encapsulation film according to an exemplary embodiment of the present application; and

(2) FIG. 3 is a cross-sectional view of an encapsulation product of an OED according to an exemplary embodiment of the present application.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

(3) Hereinafter, the present invention will be described in further detail with reference to Examples according to the present invention and Comparative Examples not according to the present invention, but the scope of the present invention is not limited to the following Examples.

Example 1

(4) (1) Preparation of Encapsulating Layer (First Layer)

(5) 100 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.), 100 g of a butadiene rubber-modified epoxy resin (KR-450, Kukdo Chemical Co., Ltd.), and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reaction vessel at room temperature, and diluted with methylethylketone (MEK). 4 g of imidazole (Shikoku Chemicals Co., Ltd.) was added as a curing agent to the homogenized solution, and stirred at a high speed for 1 hour, resulting in a solution for a first layer.

(6) (2) Preparation of Encapsulating Layer (Second Layer)

(7) A moisture adsorbent solution was prepared by adding 100 g of calcined dolomite as a moisture adsorbent and MEK having a solid content of 50 wt % as a solvent. 200 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reaction vessel at room temperature, and diluted with MEK. 4 g of imidazole (Shikoku Chemicals Co., Ltd.) was added as a curing agent to the homogenized solution, and the resulting solution was stirred at a high speed for 1 hour, and thus a solution for a moisture barrier layer was prepared. The moisture adsorbent solution previously prepared was added to the resulting solution to have a content of the calcined dolomite of 50 parts by weight relative to 100 parts by weight of an encapsulating resin of a second layer, resulting in preparing a solution for a second layer.

(8) (3) Manufacture of Film

(9) A second layer having a thickness of 40 μm was formed by coating the solution for the moisture barrier layer previously prepared on a releasing surface of releasing PET, and drying the coated surface at 110° C. for 10 minutes. An encapsulation film was manufactured by manufacturing a multilayer film by laminating the first and second layers previously prepared, and laminating the multilayer film with a 20 μm copper film.

Example 2

(10) An encapsulation film was manufactured by the same method as described in Example 1, except that 100 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.), 100 g of an acryl rubber-modified epoxy resin (KR-692, Kukdo Chemical Co., Ltd.), and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reaction vessel at room temperature and diluted with MEK, and 4 g of imidazole (Shikoku Chemicals Co., Ltd.) was added as a curing agent to the homogenized solution and stirred at a high speed for 1 hour, resulting in a solution for a first layer.

Example 3

(11) An encapsulation film was manufactured by the same method as described in Example 1, except that 50 g of a polyisobutene resin (weight average molecular weight: 450,000) as an encapsulating resin of a first layer and 50 g of a hydrogenated dicyclopentadiene-based resin (softening point: 125° C.) as a tackifier were added into a reaction vessel at room temperature, and 10 g of a DCPD-based epoxy resin and 1 g of imidazole (Shikoku Chemicals Co., Ltd.) were diluted with toluene to have a solid content of approximately 30 wt %.

Example 4

(12) An encapsulation film was manufactured by the same method as described in Example 1, except that 50 g of a polyisobutene resin (weight average molecular weight: 450,000) as an encapsulating resin of a crack barrier layer and 50 g of a hydrogenated dicyclopentadiene-based resin (softening point: 125° C.) as a tackifier were added into a reaction vessel at room temperature, and 20 g of a multifunctional acryl monomer (TMPTA) and 1 g of a photoinitiator were diluted with toluene to have a solid content of approximately 25 wt %.

Example 5

(13) A moisture adsorbent solution was prepared by adding 100 g of calcined dolomite as a moisture adsorbent and toluene as a solvent to have a solid content of 50 wt %. An encapsulation film was manufactured by the same method as described in Example 1, except that 50 g of a polyisobutene resin (weight average molecular weight: 450,000) as an encapsulating resin of a first layer and 50 g of a hydrogenated dicyclopentadiene-based resin (softening point: 125° C.) as a tackifier were added into a reaction vessel at room temperature, and 10 g of a multifunctional acryl monomer (TMPTA) and 1 g of a photoinitiator were diluted with toluene to have a solid content of approximately 25 wt %, and a second layer was excluded.

Example 6

(14) An encapsulation film was manufactured by laminating the encapsulating layer formed in the first layer of Example 5 on an aluminum film.

Comparative Example 1

(15) An encapsulation film was manufactured by the same method as described in Example 1, except that 200 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reaction vessel at room temperature, and diluted with MEK, and a solution for a first layer was prepared by adding 4 g of imidazole (Shikoku Chemicals Co., Ltd.) as a curing agent to the homogenized solution, and stirring the resulting solution at a high speed for 1 hour.

Comparative Example 2

(16) An encapsulation film was manufactured by the same method as described in Example 1, except that an encapsulating layer formed of only the second layer of Example 1 was used.

(17) 1. Measurement of Tensile Modulus

(18) A coating film having a thickness of 40 μm was formed by laminating the crack barrier layer or moisture barrier layer manufactured in Example or Comparative Example. A sample was prepared by cutting the manufactured coating film to a size of 50 mm×10 mm (length×width) by setting a coating direction in the manufacture to a length direction, and both sides of the sample were taped to only have a length of 25 mm. Subsequently, the taped parts were extended at a speed of 18 mm/min at 25° C., and a tensile modulus was measured.

(19) 2. Measurement of Warpage in Evaluation of High Temperature and High Humidity Reliability

(20) A sample was manufactured by laminating the film manufactured in Example or Comparative Example on a cover substrate, laminating the resulting substrate between glass substrates, and pressured and thermal pressing the resulting product at 70° C. Afterward, the sample was maintained in a constant temperature and constant humidity chamber at 85° C. and a relative humidity of 85% for approximately 300 hours. When warpage occurred, it was represented as X, and when warpage did not occur, it was represented as O.

(21) TABLE-US-00001 TABLE 1 Adhesion failure in evaluation of high temperature and Tensile modulus Tensile modulus high humidity of second layer of first layer reliability Example 1 650 MPa 400 MPa ◯ Example 2 900 MPa 450 MPa ◯ Example 3 900 MPa 100 MPa ◯ Example 4 900 MPa  10 MPa ◯ Example 5 —  10 MPa ◯ Example 6 —  10 MPa ◯ Comparative  1 GPa 900 MPa X Example 1 Comparative 900 MPa — X Example 2

DESCRIPTION OF REFERENCE NUMERALS

(22) 11: base or releasing film 12: encapsulating layer 12a: a first layer 12b: a second layer 13: metal layer 21: substrate 22: organic electronic device