CHEMICALLY STRENGTHENED GLASS SUBSTRATE WITH REDUCED INVADING ION SURFACE CONCENTRATION AND METHOD FOR MAKING THE SAME

Abstract

A method of implanting ions to modify the invading ion surface layer concentration of a chemically strengthened glass substrate, where the ions are selected from the group consisting of N, H, O, He, Ne, Ar, and Kr and are implanted in the chemically strengthened glass substrate with a dosage between 10.sup.14 ions/cm.sup.2 and 10.sup.18 ions/cm.sup.2, and an acceleration voltage between 5 kV and 100 kV.

Claims

1: A method of implanting ions to decrease an invading ion concentration in a surface layer of a chemically strengthened glass substrate, comprising: a. selecting the ions from the group consisting of ions of N, H, O, He, Ne, Ar, and Kr; and b. implanting the ions in the chemically strengthened glass substrate with a dosage between 10.sup.14 ions/cm.sup.2 and 10.sup.18 ions/cm.sup.2, and an acceleration voltage between 5 kV and 100 kV.

2: The method of implanting ions to decrease the invading ion concentration in the surface layer of the chemically strengthened glass substrate according to claim 1, wherein a. the invading ion is K.sup.+, and b. the surface layer starts at a substrate surface and reaches-down to a depth d, where 100 nm<d<900 nm.

3: The method of implanting ions to decrease the invading ion concentration in the surface layer of the chemically strengthened glass substrate according to claim 1, wherein the invading ion concentration in the surface layer α is not more than 90% of the invading ion concentration in the substrate at a depth of 1 μm β, where 100 nm<d<900 nm, where the invading ion concentration is expressed as an invading ion to silicon signal intensity ratio in a SIMS profile.

4: The method of implanting ions to decrease the invading ion concentration in the surface layer of the chemically strengthened glass substrate according to claim 1, wherein the chemically strengthened glass substrate is soda lime glass or aluminosilicate glass.

5: A chemically strengthened glass substrate comprising: a glass substrate, and a surface layer starting at the substrate surface and reaching down to a depth d, wherein an invading ion concentration in the surface layer is equal to or lower than 90% of the invading ion concentration at a depth of 1 μm, where 100 nm<d<900 nm, where the invading ion concentration is expressed as the invading ion to silicon signal intensity ratio in a SIMS profile.

6: The chemically strengthened glass substrate according to claim 5, wherein the glass substrate is created from soda lime glass.

7: The chemically strengthened glass substrate according to claim 5, wherein the glass substrate is created from aluminosilicate glass.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0014] FIG. 1 is a schematic partial representation (not to scale) of an first chemically strengthened, then ion implanted glass substrate according to the present invention.

[0015] FIG. 2 shows a depth profile of potassium to silicon SIMS intensity ratio of an glass substrate according to the present invention.

DESCRIPTION OF EMBODIMENTS

[0016] The present invention concerns the use of implanted ions to decrease the invading ion concentration in a surface layer of a chemically strengthened glass, wherein [0017] a. the ions are selected from one or more of the ions of N, H, O, He, Ne, Ar, and Kr and [0018] b. are implanted in the substrate with a dosage comprised between 10.sup.14 ions/cm.sup.2 and 10.sup.18 ions/cm.sup.2, and an acceleration voltage comprised between 5 kV and 100 kV.

[0019] In particular the present invention concerns the use of implanted ions to decrease the invading ion concentration in a surface layer of a chemically strengthened glass according to claim 1, wherein [0020] a. the invading ion is K.sup.+, and [0021] b. the surface layer starts at the substrate surface and reaches down to a depth d, where 100 nm<d<900 nm.

[0022] In particular the present invention concerns the use of implanted ions to decrease the invading ion concentration in a surface layer of a chemically strengthened glass according to any one preceding claim, wherein the invading ion concentration α in the surface layer is not more than 90% of the invading ion concentration β in the substrate at a depth of 1 μm, where 100 nm<d<900 nm, where the invading ion concentration is expressed as the invading ion to silicon signal intensity ratio in a SIMS profile.

[0023] In particular the present invention concerns the use of implanted ions to decrease the invading ion concentration in a surface layer of a chemically strengthened glass according to any one preceding claim, wherein the chemically strengthened glass is soda lime glass or aluminosilicate glass.

[0024] The present invention also concerns a chemically strengthened glass substrate comprising a surface layer starting at the substrate surface and reaching down to a depth d, wherein the invading ion concentration in the surface is not more than 90% of the invading ion concentration at a depth of 1 μm, where 100 nm<d<900 nm, where the invading ion concentration is expressed as the invading ion to silicon signal intensity ratio in a SIMS profile.

[0025] A initial chemically strengthened glass substrate in the present invention shows an increased amount of invading ion, such as for example K.sup.+ up to a depth of at least 10 μm from the substrate surface. Chemical strengthening makes glass mechanically more resistant as the glass surface, up to a depth DOL of at least 6 μm, or even at least 10 μm, is set under compressive stress by replacement of part of the smaller alkali host ions, for example Na+, by larger invading ions, for example K.

[0026] According to the present invention single charge and/or multicharge ions are implanted up to an implantation depth D of up to 1 μm. FIG. 1 illustrates a is a schematic partial representation (not to scale) of a chemically strengthened, then implanted glass substrate (100) according to the present invention. An implanted layer (102) is thereby formed in the chemically strengthened glass substrate. As indicated on FIG. 1, a surface layer (101) is formed, starting at the substrate surface and reaching down to a depth d wherein the concentration of K.sup.+ is reduced compared to the initial chemically strengthened substrate. The depth d of this surface part-layer is less than the implantation depth D, in particular 100 nm<d<900 nm, more particularly 100 nm<d<500 nm. According to the present invention the invading ion's concentration in the surface layer (101) up to a depth d may be at least 10% lower than at a depth of 1 μm, without significantly modifying the initial CS and DOL values. All depth are measured starting from the substrate surface.

[0027] In particular CS and DOL values after ion implantation are not more than 5% lower than the initial CS and DOL values.

[0028] For the purpose of the present invention, the invading ion's concentration in the glass was determined by secondary ion mass spectroscopy (SIMS). The ion concentration is the SIMS intensity ratio of the invading ion and of silicon as explained in further detail below.

[0029] FIG. 2 shows the depth profile of the potassium/silicon SIMS intensity ratio of a chemically strengthened, then implanted glass substrate versus the depth 6. A typical, non-implanted, chemically strengthened glass substrate shows a steadily decreasing K/Si SIMS intensity ratio as one progresses from the surface towards the bulk if the substrate. As can be seen in this example embodiment of the present invention, a surface layer up to a depth d with a K/Si SIMS intensity ratio of at most a formed, wherein α<β, β being the K/Si SIMS intensity ratio at a depth of 1 μm.

[0030] Glass substrates suitable for use in connection with the present invention include in particular flat, sheet-like glass substrates, having two major opposed surfaces and having a composition capable of being strengthened by chemical strengthening.

[0031] Specific examples thereof include soda-lime silicate glass, alumino-silicate glass, borate glass, lithium alumino-silicate glass, borosilicate glass, and alkali-free glass, and transparent glass plates formed of various other kinds of glass. Soda-lime glass and alumino-silicate glass is particularly often used.

[0032] Among them, glass containing alkali metal ions or alkali earth metal ions, that have smaller ion radius, is preferred, and glass containing Na.sup.+ ions is more preferred. A glass substrate containing Na.sup.+ ions is capable of being subjected to ion exchange with alkali metal ions having ion radius larger than Na.sup.+, for example K.sup.+ ions. The Na.sup.+ ions can thus be effectively replaced to thereby strengthen the glass, even when the glass substrate has a temporary thin film formed on a surface thereof.

[0033] The composition of the glass substrate for chemical strengthening according to the present invention is not particularly limited, other than by the fact that it should permit ion exchange. For example, the following glass compositions may be used.

[0034] Preferably, the composition of the glass substrate of the invention is boron- and lithium-free. This means that the elements boron and lithium are not intentionally added in the glass batch/raw materials and that, if present, their content in the composition of the glass sheet reaches only level of an impurity unavoidably included in the production.

[0035] In an embodiment, the composition of the glass substrate comprises the following in weight percentage, expressed with respect to the total weight of glass:

TABLE-US-00001 SiO.sub.2 55-78%  Al.sub.2O.sub.3 0-18% B.sub.2O.sub.3 0-18% Na.sub.2O >0-20%  CaO 0-15% MgO 0-10% K.sub.2O 0-10% BaO  0-5%

[0036] Advantageously, notably for low production costs reasons, the composition of the glass substrate is a soda-lime-silicate glass. According to this embodiment, the composition of the glass substrate comprises the following in weight percentage, expressed with respect to the total weight of glass:

TABLE-US-00002 SiO.sub.2 60-78%  Al.sub.2O.sub.3  0-8% B.sub.2O.sub.3  0-4% CaO 0-15% MgO 0-10% Na.sub.2O 5-20% K.sub.2O 0-10% BaO .sup. 0-5%.

[0037] Preferably, the composition of the glass substrate comprises the following in weight percentage, expressed with respect to the total weight of glass:

TABLE-US-00003 SiO.sub.2 60-78%  Al.sub.2O.sub.3 0-6% B.sub.2O.sub.3 0-1% CaO 5-15%  MgO 0-8% Na.sub.2O 10-20%  K.sub.2O 0-5% BaO  0-1%.

[0038] Preferably the chemically strengthened glass substrate has, before and after ion implantation, on both opposed surfaces CS values of at least 400 MPa and DOL values of at least 6 μm. CS values are preferably comprised between 400 MPa and 1200 MPa, DOL values are preferably comprised between 6 μm and 40 μm. Preferably the chemically strengthened glass substrate has a thickness comprised between 0.1 mm and 3 mm. When the glass substrate is soda lime glass sheet, the two opposed surfaces' CS values are preferably at least 400 MPa at DOL values of at least 8 μm, before and after ion implantation. When the glass substrates are alumino-silicate glass sheets the CS values are preferably at least 650 MPa and the DOL values at least 16 μm, before and after ion implantation.

[0039] Preferably the chemical strengthening is performed in a bath of molten salt, preferably comprising KNO.sub.3, at a temperature between 400° C. and 500° C. for a duration of 20 minutes to 24 hours.

[0040] The chemical strengthening process may be performed, for example by immersing the glass substrate in bath of molten potassium nitrate KNO.sub.3 at a temperature between 400° C. and 500° C. for 20 minutes to 24 hours. As will be appreciated by those skilled in the art, various process parameters of the ion exchange can be selected by taking into consideration the composition and thickness of the glass, the molten salt used, and the stress profile required for the final use of the chemically strengthened glass.

[0041] In another preferred embodiment of the present invention the chemical strengthening is performed by immersing the glass substrate in bath of molten potassium nitrate at a temperature between 400° C. and 500° C. for 24 hours to 48 hours.

[0042] The invention proposes a method for treating a glass substrate by subjecting an area of the glass substrate to an ion beam so as to implant ions of the beam up to a certain depth D into the glass substrate, creating a three dimensional implantation zone, wherein [0043] a. the positively charged ions are generated by an ion source which produces simultaneously single charge and multicharge ions. Multicharge ions are ions carrying more than one positive charge, single charge ions carry one single positive charge. One such ion source is for example an Electron Cyclotron Resonance (ECR) ion source, [0044] b. the ions of the beam are selected from the ions of Ar, N, He, O, Ne, Kr, Xe, preferably form the ions of Ar, N, O and He. The single charge and multicharge ions generated simultaneously by the ion source make up the ions of the beam, [0045] c. the ion acceleration voltage is set at a value comprised between 5 and 100 kV, [0046] d. the beam power is set at a value comprised between 1 W and 500 W, and [0047] e. the ion dosage per surface unit is set at a value comprised between 10.sup.14 ions/cm.sup.2 and 10.sup.18 ions/cm.sup.2, preferably between 10.sup.15 ions/cm.sup.2 and 10.sup.18 ions/cm.sup.2.

[0048] In one embodiment of the invention the ion beam comprises Ar.sup.+, Ar.sup.2+, Ar.sup.3+, Ar.sup.4+, and Ar.sup.5+. While the present invention may use an ion beam comprising varying amounts of the different Ar ions, example intensities of the respective Ar ions are shown in the Table 1 below.

TABLE-US-00004 TABLE 1 Example intensity Ar.sup.+   2 mA Ar.sup.2+ 1.29 mA Ar.sup.3+ 0.60 mA Ar.sup.4+ 0.22 mA Ar.sup.5+ 0.11 mA

[0049] In another embodiment of the invention the ion beam comprises N.sup.+, N.sup.2+, and N.sup.3+. While the present invention may use an ion beam comprising various amounts of the different N ions, example intensities of the respective N ions are shown in Table 2 below.

TABLE-US-00005 TABLE 2 Example intensities N.sup.+ 0.55 mA N.sup.2+ 0.60 mA N.sup.3+ 0.24 mA

[0050] In another embodiment of the invention the ion beam comprises He.sup.+, and He.sup.2+. While the present invention may use an ion beam comprising various amounts of the different He ions, example intensities of the respective He ions are shown in Table 3 below.

TABLE-US-00006 TABLE 3 Example intensities He.sup.+ 1.35 mA He.sup.2+ 0.15 mA

[0051] The accelerator voltage and beam power as well as the dose of ions per unit of surface area are chosen to allow the implantation of ions from the beam into an implantation zone having a depth D of between 0.1 μm and 1 μm, preferably between 0.1 μm and 0.5 μm.

[0052] For a fixed acceleration voltage, every differently charged ion will have a different energy. For example in an ion beam comprising Ar.sup.+, Ar.sup.2+, Ar.sup.3+, Ar.sup.4+, and Ar.sup.5+ and an acceleration voltage of 35 kV, Ar.sup.+, Ar.sup.2+, Ar.sup.3+, Ar.sup.4+, and Ar.sup.5+ ions will have an energy respectively of 35 keV, 70 keV, 105 keV, 140 keV, and 175 keV (kilo-electron-volt). The maximum implantation depth will increase from the least energetic ion (Ar.sup.+) to the most energetic ion (Ar.sup.5+).

[0053] Because of their higher energy ions carrying a higher charge will be implanted deeper into a substrate than ions carrying a lower charge. Therefore, for a given total ion dosage, a narrow depth distribution is obtained when only simple charge ions are implanted and a wider depth distribution is obtained when simple charge and multicharge ions are implanted simultaneously.

[0054] In a preferred embodiment of the present invention the temperature of the area of the chemically strengthened glass substrate being implanted, situated under the area being treated is less than or equal to the glass transition temperature of the glass substrate. This temperature is for example influenced by the intensities of the ions in the beam, by the residence time of the treated area in the beam and by any cooling means of the substrate.

[0055] In one embodiment of the invention chemically strengthened glass substrate and ion beam are displaced relative to each other so as to progressively treat the glass substrate. Preferably they are displaced relative to each other at a speed VD comprised between 0.1 mm/s and 1000 mm/s. VD is chosen in an appropriate way to control the residence time of the sample in the beam which influences ion dosage and temperature of the area being treated.

[0056] In one embodiment the chemically strengthened glass substrate sheet is at least implanted on part of one or both of its surfaces.

[0057] In one embodiment the chemically strengthened glass substrate sheet is at least treated on the entirety of one or both of its surfaces.

[0058] In one embodiment of the invention the total dosage of ions per surface unit of an area of the chemically strengthened glass substrate is obtained by a single treatment by the ion beam.

[0059] In another embodiment of the invention the total dosage of ions per surface unit of an area of the chemically strengthened glass substrate is obtained by a several consecutive treatments by the ion beam.

[0060] In one embodiment of the invention several, at least two, ion beams are used simultaneously or consecutively to treat the chemically strengthened glass substrate.

[0061] It is thus possible to reduce the invading ions surface layer concentration by introducing a certain dosage of the selected ions to a significant depth in the glass substrate and at the same time it is also possible to obtain modified surface properties such as increased scratch resistance and/or lowered reflectance.

[0062] According to an embodiment of the present invention the positively charged implanted ions comprise a mixture of single and/or multiple charged ions.

[0063] The implantation of ions according to the present invention is preferably performed in a vacuum chamber at a pressure comprised between 10.sup.−7 mbar and 10.sup.−2 mbar, more preferably at a pressure comprised between 5×10.sup.−5 mbar and 2×10.sup.−6 mbar.

[0064] An example ion source for carrying out the method of the present invention is the Hardion+ ECR ion source from Ionics SA.

[0065] The present invention also concerns the use of a mixture of single charge and multicharge ions of N, H, O, He, Ne, Ar, or Kr to reduce the surface layer concentration of the invading ion in a chemically strengthened glass substrate, the mixture of single charge and multicharge ions being implanted in the glass substrate with an ion dosage and acceleration voltage effective to reduce the reference reflectance of the glass substrate.

[0066] Advantageously the implantation depth d of the ions may be comprised between 0.11 μm and 1 μm, preferably between 0.15 μm and 0.5 μm. The implanted ions are spread between the substrate surface and the implantation depth. The implantation depth may be adapted by the choice of implanted ion, by the acceleration energy and varies to a certain degree depending on the substrate.

[0067] According to the present invention, the mixture of single charge and multicharge ions of O or N preferably comprises, O.sup.+ and O.sup.2+ or N.sup.+, N.sup.2+ and N.sup.3+ respectively.

[0068] According to a preferred embodiment of the present invention, mixture of single charge and multicharge ions of O comprises a lesser amount of O.sup.2+ than of O. In a more preferred embodiment of the present invention the mixture of single charge and multicharge ions of O comprises 55-98% of O.sup.+ and, 2-45% of O.sup.2+.

[0069] According to another preferred embodiment of the present invention, mixture of single charge and multicharge ions of N comprises a lesser amount of N.sup.3+ than of N.sup.+ and of N.sup.2+ each. In a more preferred embodiment of the present invention the mixture of single charge and multicharge ions of N comprises 40-70% of N.sup.+, 20-40% of N.sup.2+, and 2-20% of N.sup.3+.

[0070] According to another preferred embodiment, the glass sheet of the invention is a glass sheet formed by a slot draw process or by a fusion process, in particular the overflow downdraw fusion process. These processes, in particular the fusion process produces glass sheets whose surfaces may reach superior flatness and smoothness necessary in some applications, but they are also more expensive than the float process for large scale glass production.

[0071] The substrate according to the invention may have a thickness of from 0.1 to 25 mm. Advantageously, in the case of display applications, the glass sheet according to the invention has preferably a thickness of from 0.1 to 6 mm. More preferably, in the case of display applications and for reasons of weight, the thickness of the glass sheet according to the invention is of from 0.1 to 2.2 mm.

[0072] In certain applications the substrate according to the invention may have a thickness of from 10 μm to 100 μm, advantageously from 50 μm to 100 μm.

[0073] Embodiments of the invention will now be further described, by way of examples only, together with some comparative examples, not in accordance with the invention. The following examples are provided for illustrative purposes, and are not intended to limit the scope of this invention.

[0074] The person skilled in the art realizes that the present invention by no means is limited to the preferred embodiments described above. On the contrary, many modifications and variations are possible within the scope of the appended claims.

Examples

[0075] Table 4 below shows details on the substrates, the chemical strengthening parameters and the initial CS and DOL values before ion implantation of the chemically strengthened glass substrates used to prepare the first chemically strengthened, then implanted glass substrates of the present invention.

TABLE-US-00007 TABLE 4 chemical strength- initial CS Substrate ening parameters and DOL thickness Duration temperature CS.sub.i DOL.sub.i glass type [mm] [h] [° C.] [MPa] [μm] Ex1 soda lime 0.55 1.5-3 440-480 563 11.8 Ex2 Alumino- 0.55 1.5-3 380-420 738 25.2 silicate 1 Ex3 Alumino- 0.55 1.5-3 440-480 636 49.9 silicate 1 Ex4 Alumino- 0.50 1.5-3 440-480 610 25.7 silicate 2 Ex5 Alumino- 0.50   7-98 380-420 807 22.2 silicate 2 Ex6, Alumino- 0.50 944 32.8 6′, 6″ silicate 3

[0076] In the implantation zone of a glass substrate, the depth distribution profile of the invading ion in the glass was determined by secondary ion mass spectroscopy (SIMS). The SIMS depth distribution profiles were carried out on a Cameca imsf-4 instrument. The sputter erosion conditions are: primary beam 5.5 keV Cs+, current density 0.16 mA/cm.sup.2; sputtered area 125×125 pmt. The analyzed area has a diameter of 60 μm. MCs+ ions are detected, where M stands for the element to be detected. The detection intensity signal I(M) for each element M versus the sputtering time is recorded at predetermined time intervals, leading to an intensity profile for this element versus a time scale. The depth scale is obtained by measuring the total depth of the crater obtained after the sputter erosion using a step profiler after the SIMS measurement. The time scale is converted into a depth scale assuming a constant sputtering rate. Any signal due to surface contamination is to be ignored.

[0077] For each sample (implanted and non-implanted as reference) the profile of the depth distribution (μm) of the intensity I(CsM) of the MCs+ ions, normalized with respect to isotope ratio and Cs-intensity is calculated. A semi-quantification of the invading ion's M concentration profile is obtained by calculating the ratios of I(CsM)/I(CsSi). For the purpose of the present invention the intensity ratio I(CsM)/I(CsSi) is calculated from the intensity signal I(CsM) of MCs+ for the invading ion M, and from the intensity signal I(CsSi) of SiCs+ for silicon, where the silicon isotope detected is .sup.28Si. In particular, when the invading ion M is potassium K, the intensity ratio I(CsK)/I(CsSi) is calculated, the potassium isotope detected is .sup.39K.

[0078] The ion implantation examples were prepared according to the various parameters detailed in the tables below using an ECR ion source for generating a beam of a mixture of single charge and multicharge ions. The ion source used was a Hardion+ ECR ion source from Ionics S.A.

[0079] All samples had a size of about 100 cm.sup.2 and were treated on the entire surface by displacing the substrate through the ion beam at a speed selected between 10 and 100 mm/s.

[0080] The temperature of the area of the substrate being treated was kept at a temperature less than or equal to the melting temperature of the substrate.

[0081] For all examples the implantation was performed in a vacuum chamber at a pressure of 10.sup.−6 mbar.

[0082] Using the ECR ion source, and a N.sub.2 source gas, ions of N were implanted in the chemically strengthened substrates.

TABLE-US-00008 TABLE 5 implantation parameters final CS and DOL Acceleration Dose CS.sub.f DOL.sub.f Voltage [kV] [ions/cm.sup.2] [MPa] [μm] Ex1 35 10.sup.16 559 11.8 Ex2 35 10.sup.16 734 27.2 Ex3 35 10.sup.16 656 53.7 Ex4 35 10.sup.16 609 25.8 Ex5 35 10.sup.16 822 22.4 Ex6 20 7 × 10.sup.16 947 32.8 Ex6′ 20 8 × 10.sup.16 946 32.7 Ex6″ 20 9 × 10.sup.16 947 32.6

[0083] For each sample 1 to 6″ according to the present invention the invading ion concentration in the surface layer was at least 10% lower than the invading ion concentration at a depth of 1 μm.

[0084] As can be seen from table 5 above, the implantation of ions of N leads to very little change in CS and DOL values of the chemically strengthened glass substrates.

[0085] Table 6 below shows the scratch resistance of the samples before and after the ion implantation.

[0086] Scratch resistance of the glass substrates was determined by a progressive load scratch test. This test corresponds to a load ramp applied during a defined displacement of the sample beneath it. Here measurements were performed with a microscratch tester “MicroCombi tester” from CSM Instruments. The scratch test consists in moving a diamond stylus that is placed on the substrate surface along a specified line under a linearly increasing normal force and with a constant speed. For glass samples of soda-lime type the scratches were made with a Rockwell diamond indenter with a radius of 200 μm (200 μm tip). For glass samples of aluminosilicate type the scratches were made with a Rockwell diamond indenter with a radius of 100 μm (100 μm tip).

[0087] The stylus was moved along a straight line of 1.5 cm in length. The speed was kept constant at 5 mm/min. The normal force (load) applied on the stylus was increased from 0.03 N at the start of the scratch to 30 N at the end of the scratch. During the scratch, the penetration depth, the acoustic emission and the tangential force are recorded and the aspect of the scratch is observed as a function of the penetration depth.

[0088] The load applied on the stylus when the first cracks appear at the glass surface is the critical load with 100 μm tip radius of the Rockwell diamond indenter used.

[0089] For each sample the average of at least three measurements is determined. The higher the scratch resistance the higher the load at which the first cracks appear.

[0090] On the equipment used for the present experiments the maximum possible load was limited to 30 N.

[0091] On samples with a very high scratch resistance no cracks appear even when the maximum load is applied to the stylus.

[0092] Table 6 below shows the scratch resistance of the samples before and after the ion implantation.

TABLE-US-00009 TABLE 6 Critical load CL with 100 μm tip [N] Initial CL.sub.i Final Cl.sub.f Ex1 8.9 9.1 Ex2 9.6 12.0 Ex3 11.0 16.7 Ex4 10.6 13.1 Ex5 11.0 13.6 Ex6 12.1 13.6

[0093] As can be seen from table 6 above, the scratch resistance is further improved after implanting the already very scratch resistant chemically strengthened glass substrates.

[0094] Indeed it was found that, in addition to reducing the potassium surface layer concentration, implanting chemically strengthened glass substrates with ions using an acceleration voltage of 10 to 50 kV and a dose in the range from 10.sup.15 to 5×10.sup.16 ions/cm.sup.2 led to an increase in scratch resistance.

[0095] It was also found that, in addition to reducing the potassium surface layer concentration, implanting chemically strengthened glass substrates with ions using an acceleration voltage of 15 to 40 kV and a dose in the range from 4×10.sup.16 to 7.5×10.sup.17 ions/cm.sup.2 led to an decrease of visible reflectance.