BOTTOM OHMIC SILVER PASTE FOR STRONTIUM TITANATE RING VARISTOR, PREPARATION METHOD AND USE THEREOF
20230321764 · 2023-10-12
Inventors
- Zhinan Chai (Guangzhou, CN)
- Shuiming Zhou (Guangzhou, CN)
- Keqiang Wang (Guangzhou, CN)
- Xuezhao Wang (Guangzhou, CN)
Cpc classification
B23K2101/36
PERFORMING OPERATIONS; TRANSPORTING
H01C1/144
ELECTRICITY
B23K35/3006
PERFORMING OPERATIONS; TRANSPORTING
International classification
B23K35/02
PERFORMING OPERATIONS; TRANSPORTING
B23K35/30
PERFORMING OPERATIONS; TRANSPORTING
B23K35/36
PERFORMING OPERATIONS; TRANSPORTING
H01C1/144
ELECTRICITY
Abstract
The present invention provides a bottom ohmic silver paste for strontium titanate ring varistor including silver powder, doped SnO.sub.2 micro powder, glass powder, organic solvent and organic binder, and the mass ratio of the silver powder, the doped SnO.sub.2 micro powder, the glass powder, the organic solvent and the organic binder is [65,85]:[0.9,4.3]:[0.5,5]:[10,20]:[10,15]. The present invention also provides a preparation method and use of the bottom ohmic silver paste for strontium titanate ring varistor of the present invention.
Claims
1. A bottom ohmic silver paste for strontium titanate ring varistor, wherein the bottom ohmic silver paste comprises silver powder, doped tin dioxide SnO.sub.2 micro powder, glass powder, organic solvent and organic binder, and a mass ratio of the silver powder, the doped tin dioxide SnO.sub.2 micro powder, the glass powder, the organic solvent and the organic adhesive is [65, 85]:[0.9, 4.76]:[0.5, 5]:[10, 20]:[5,15].
2. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the doped tin dioxide SnO.sub.2 micro powder is tin dioxide SnO.sub.2 micro powder doped with one or two of antimony, fluorine, phosphorus and tungsten ions.
3. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the doped tin dioxide SnO.sub.2 micro powder is doped with Sb.sub.2O.sub.3.
4. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein a mass ratio of tin dioxide SnO.sub.2 to dopant in the doped tin dioxide SnO.sub.2 micro powder is [89, 99]:[1, 11], in which sum of mass ratio of the tin dioxide SnO.sub.2 micro powder and the dopant is 100.
5. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the doped tin dioxide SnO.sub.2 micro powder is spherical and has a median granularity D50 of 0.5-3 μm.
6. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the doped tin dioxide SnO.sub.2 micro powder has a specific surface area of 2-50 m2/g and a resistivity of 0.1-1 Ω.Math.cm at room temperature.
7. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein a method for preparing the glass powder comprises the steps of: mixing H.sub.3BO.sub.3, SiO.sub.2, BaCo.sub.3, ZnO, Al.sub.2O.sub.3, Na.sub.2CO.sub.3, K.sub.2CO.sub.3 at a mass ratio of [20, 60]:[15, 25]:[10, 20]:[15, 20]:[1, 10]:[5, 20]:[1, 10] via ball milling and obtaining a mixture; melting the mixture at 1250° C. for 2-3 h and obtaining glass slag via water-quenched after melting; placing the glass slag into a ball milling tank and carrying out ball milling for 4-24 h; and obtaining the glass powder with softening point of 635-700° C. and median granularity of D50≤3 m after sieving and drying.
8. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the silver powder comprises a spherical silver powder A having a particle size of [1.0, 2.5] μm, a spherical silver powder B having a particle size of [0.8, 1.0] μm and a spherical silver powder C having a particle size of [0.2, 0.8] μm, and a mass ratio of spherical silver powder A:spherical silver powder B:spherical silver powder C is [30, 60]:[20, 30]:[5, 10].
9. A bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein a method for preparing the organic binder comprises the steps of: accurately weighing at least one of [80, 90] mass parts terpineol and butyl carbitol and adding the terpineol and/or butyl carbitol into a glue making machine, and heating the terpineol and/or butyl carbitol to 80° C.; adding [10, 20] mass parts of ethyl cellulose, and controlling the temperature at [90,95]° C.; fully stirring the mixture to form a transparent gelatinous mixture; and cooling the mixture naturally to room temperature in a plastic or stainless steel drum, to obtain the organic binder having a viscosity of 400-600 dPa.Math.S.
10. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the organic solvent is one or two of terpineol, butyl carbitol, dibutyl phthalate.
11. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein a method for preparing the bottom ohmic silver paste comprises the steps of: mixing the silver powder, the doped tin dioxide SnO.sub.2 micro powder, the glass powder, the organic solvent and the organic binder at a mass ratio of [65, 85]:[0.9, 4.76]:[0.5, 5]:[10, 20]:[5, 15] to obtain a mixture; ball milling the mixture and rolling the mixture to obtain the bottom ohmic silver paste.
12. The bottom ohmic silver paste for strontium titanate ring varistor of claim 1, wherein the bottom ohmic silver paste is printed on a surface of a high resistance layer of a strontium titanate substrate having nonlinear volt-ampere characteristics, and the bottom ohmic silver paste is sintered in air at a sintering temperature of [800,860]° C.
13. A method for improving easy welding and enduring welding performances of strontium titanate ring varistor comprising the steps of: screen printing a bottom ohmic silver paste on a substrate of strontium titanate ring varistor having volt-ampere characteristics and drying, screen printing surface layer of silver paste in the same position again and drying; sintering the substrate with bottom ohmic silver paste and surface layer of silver paste in the air to form silver electrode, wherein the bottom ohmic silver paste is the bottom ohmic silver paste for strontium titanate ring varistor of claim 1.
14. The method for improving easy welding and enduring welding performances of strontium titanate ring varistor of claim 13, wherein a method for preparing the strontium titanate ring varistor substrate comprises the steps of: mixing SrCO.sub.3, BaCO.sub.3, CaCO.sub.3 and TiO.sub.2 proportionally proportioned to obtain a mixture; ball-milling and drying the mixture, to solid-state synthesize strontium barium calcium titanate powder; doping one or more of Nb.sub.2O.sub.5, La.sub.2O.sub.3, Ta.sub.2O.sub.5 and SiO.sub.2, MnCO.sub.3 to prepare ceramic body of strontium barium calcium titanate ring varistor by ball milling, granulation and molding; and obtaining strontium titanate substrate having nonlinear volt-ampere characteristics by discharging glue, reduction sintering and oxidation sintering.
15. The method for improving easy welding and enduring welding performances of strontium titanate ring varistor of claim 13, wherein the surface layer silver paste is a silver conductive paste having a silver content of [70, 80] percentages.
16. A ring varistor with easy welding and enduring welding performances prepared by the method for improving easy welding and enduring welding performances of strontium titanate ring of claim 13.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0042] In order to better illustrate the technical solution of the present invention, the present invention will be described in detail in view of the examples and the attached drawings. All the specific parameters and descriptions of the examples of the present invention are used for better illustration only, not for limitation of the present invention. Any replacement, recombination, deletion or addition that does not exceed the expected effect of the technical solution will fall within the scope of protection of the present invention.
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[0045]
[0046]
[0047]
[0048]
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[0050]
DETAILED DESCRIPTION OF THE INVENTION
[0051] A bottom ohmic silver paste for strontium titanate ring varistor includes silver powder, doped tin dioxide SnO.sub.2 micro powder, glass powder, organic solvent and organic binder, and a mass ratio of the silver powder, the doped tin dioxide SnO.sub.2 micro powder, the glass powder, the organic solvent and the organic binder is 75:1.125:5:10:10.
[0052] The method for preparing the glass powder includes the steps of: mixing H.sub.3BO.sub.3, SiO.sub.2, BaCO.sub.3, ZnO, Al.sub.2O.sub.3, Na.sub.2CO.sub.3, K.sub.2CO.sub.3 according to a mass ratio of 20:20:14:19:2.88:19:4.8 to obtain a mixture; placing the mixture in a ball-mill can and mixing and ball milling the mixture for 4 h-24 h; after ball milling, placing the mixture in an alumina crucible and melting in a high temperature of 1250° C. in muffle stove for 2-3 h; obtaining glass slag by water quenching after melting; putting the glass slag into a ball mill can and ball milling the glass slag with deionized water as the ball mill medium for 12-24 h; after sieving and drying, obtaining the glass powder with softening point of 650° C. and median granularity of D50≤3 μm.
[0053] Wherein the silver powder includes spherical silver powder A having particle size of 1.0-2.5 μm, spherical silver powder B having particle size of 0.8-1.0 μm, and spherical silver powder C having particle size of 0.2-0.8 μm, and the mass ratio of pherical silver powder A:pherical silver powder B:pherical silver powder C is 60:20:10.
[0054] Wherein the organic solvent is mixture of terpineol and butyl carbitol and the weight ratio of terpineol to butyl carbitol is 7:3.
[0055] The method for preparing organic binder includes the steps of adding 40 wt. % terpineol, 40 wt. % butyl carbitol into glue making machine and heating to 80° C.; weighting and adding 20 wt. % ethyl cellulose, and stirring for 2 h at 90° C. to form a transparent gelatinous mixture; placing transparent gelatinous mixture in a stainless steel drum and cooling to room temperature, to obtain an organic binder having a viscosity of 450 dPa.Math.S. [0056] wherein the doped tin dioxide SnO.sub.2 micro powder is spherical, the median granularity D50 is 0.5-3 m, the specific surface area is 2-50 m2/g, the resistivity is 0.1-1n-cm, the doped material is Sb.sub.2O.sub.3 and a mass ratio of SnO.sub.2:Sb.sub.2O.sub.3 is shown in Table 1.
TABLE-US-00001 TABLE 1 Mass ratio of SnO.sub.2:Sb.sub.2O.sub.3 in the Examples Mass Examples ratio % 1 2 3 4 5 6 7 8 9 10 SnO.sub.2 89 90 91 92 93 94 95 97 98 99 Sb.sub.2O.sub.3 11 10 9 8 7 6 5 3 2 1 Total 100 100 100 100 100 100 100 100 100 100
[0057] As shown Branch A in
[0058] The bottom ohmic silver paste prepared by the above method is screen-printed through 180 meshes on the substrate of strontium titanate ring varistor having non-linear volt-ampere characteristics as shown in
[0059] The method for preparing the strontium titanate ring varistor substrate includes the following steps: preparing solid-state synthesis of strontium barium calcium titanate powder via mixing SrCO.sub.3, BaCO.sub.3, CaCO.sub.3 and TiO.sub.2 proportionally proportioned to obtain a mixture, ball milling the mixture, and drying, sintering; doping one or more of Nb.sub.2O.sub.5, La.sub.2O.sub.3, Ta.sub.2O.sub.5 and SiO.sub.2, MnCO.sub.3 to prepare the ceramic body of strontium barium calcium titanate ring varistor by ball milling, granulation and molding; and obtaining strontium titanate ring varistor substrate with nonlinear volt-ampere characteristics by discharging glue, reduction sintering and oxidation sintering.
[0060] The surface layer silver paste is silver conductive paste having silver content of 75 percentages.
[0061] A ring varistor with easy welding and enduring welding performances of the specification shown in
[0062] The test of the above-mentioned properties and the comparison of the relevant process parameters of the strontium titanate ring varistor are shown in Tables 2, 3, 4.
[0063] According to the ratio 95:5 of SnO.sub.2:Sb.sub.2O.sub.3, the doped tin dioxide SnO.sub.2 micro powder to silver powder was added according to table 5, a bottom ohmic silver paste for a strontium titanate ring varistor is prepared as in the above embodiment. The silver paste obtained is printed on the surface of a high resistance layer with a non-linear volt-ampere varistor substrate of
TABLE-US-00002 TABLE 5 Mass percent of doped tin dioxide SnO.sub.2 micro powder in the silver powder 1.5 2.5 3.5 4.5 5.0 Note: 1.5 percent corresponding to 75:1.125 of step 2 in the Example
Comparative Example 1
[0064] As shown in Branch B of the process flow chart of
[0065] As shown in
[0066] The surface layer silver paste is a silver conductive paste on the market containing 75% silver.
Comparative Example 2
[0067] Copper electrode ring varistor on the market has the size and voltage specifications as shown in
Comparative Example 3
[0068] The difference between comparative example 1 and comparative example 3 lies in that, there is no printing of the conventional bottom layer ohmic silver paste of the prior art.
[0069] Test of Examples and three comparative examples Table 2 and Table 3 show the comparison of ohmic characteristics, wherein the data recorded in the tables are the average values of 20 pcs selected from each 500 pcs basic.
[0070] Table 4 is a recorded parameters comparison of relevant preparation process.
Analysis of Test Results 1
[0071] The results in tables 2 and 3 show that the ohmic contact is realized between the electrode and the strontium titanate ring varistor substrate., such as the three-pole voltage change rate before and after welding, three-pole difference, positive and negative current difference, value, all of them can meet the requirements of the electrical performance of the varistor when the motor is in use. The non-linear volt-ampere characteristics of strontium titanate ring varistor can be performed normally, which is comparable to the ohmic contact characteristics of the prior art of adding a highly reducing metal to the silver paste as a base layer of ohmic silver paste in comparative example 1. The typical defects of non-ohmic contact that occur in comparative example 3 are overcome. All the examples can realize the functions of high-frequency transient overvoltage protection, absorbing the electric spark generated by commutator, making the motor quiet, reducing electromagnetic interference when the DC micro-motor operates, and the peeling strength of silver layer also meet actual requirements. It can be concluded that the ratio after 89:11 will worsen the relevant parameters.
TABLE-US-00003 TABLE 2 Voltage record and change rate thereof before and after welding (specifications in FIG. 3) SnO.sub.2:Sb.sub.2O.sub.3 E1 E10 (17-29 V) added Item tested A-B B-C C-A A-B B-C C-A Example 2 90:10 before welding 18.32 18.39 18.48 27.32 27.28 27.56 after welding 17.36 17.30 17.46 26.04 25.81 25.81 change rate % −5.25 −5.90 −5.52 −4.70 −5.42 −6.34 Example 7 95:5 before welding 13.91 13.97 13.95 20.92 20.95 20.94 after welding 13.91 14.01 13.97 20.91 21.00 20.97 change rate % −0.01 0.30 0.14 −0.08 0.24 0.13 Example 9 98:2 before welding 16.20 16.06 16.43 23.59 23.36 24.02 after welding 16.22 15.86 16.20 23.50 23.18 23.78 change rate % 0.11 −1.27 −1.41 −0.40 −0.76 −1.00 Comparative No before welding 12.74 12.72 12.64 20.49 20.43 20.26 Example 1 after welding 12.87 12.82 12.72 20.56 20.43 20.34 change rate % 1.02 0.76 0.64 0.34 0.03 0.42 Comparative No before welding 46.89 No No 62.57 63.35 54.16 Example 3 after welding 28.58 No No 46.72 No No change rate % −39.05 No No −25.33 No No In examples 2, 7 and 9, the capacity at 1.0 KHz is larger than 13.325 nF, and the peeling strength of silver layer is larger than 36N. Note: “no” in the table means the data is not detected because the voltage between A and B is enough to explain the problem.
Specifications in FIG. 3
[0072]
TABLE-US-00004 SnO.sub.2:Sb.sub.2O.sub.3 E1 E10 A-B B-C C-A E1 E10 E1 E10 E1 E10 Example 2 90:10 0.90 1.48 5.76 5.84 5.76 18.32 27.32 18.34 27.06 −0.02 0.27 Example 7 95:5 0.41 0.54 5.64 5.69 5.67 13.97 20.95 14.03 21.01 −0.06 −0.06 Example 9 98:2 0.89 1.37 6.12 6.15 6.07 16.20 23.59 16.34 23.74 −0.14 −0.15 Comparative no 0.33 0.53 4.84 4.86 4.88 12.72 20.43 12.74 20.40 −0.02 0.03 Example 1 Comparative no no 15.47 21.35 no no 46.89 62.57 47.41 61.69 9.32 7.34 Example 3 Note: three-pole difference in the table equals the maximum in A-B, B-C, C-A three-electrode voltage minus the minimum in A-B, B-C, C-A three-electrode voltage.
Analysis of Test Results 2
[0073] Referring to the scanning electron microscope in
Analysis of Test Results 3
[0074] It is found that the electrode in
Analysis of Test Results 4
[0075] Analyzing the data in Table 4, to realize the E10 value of 17-29V of the same specification, the oxidation time of the substrate in examples 1-10 only needs 4.5 h, which saves more than 50% oxidation time relative to that of the substrate in the prior art, thereby saving the oxidation cost. Same oxidation temperature and oxidation time of 9.5 h, the E10 value of the present invention reaches 25-34V. Obviously, the sintering and infiltration of silver electrode process of example 1-10 contributes part of the E10 value, which breaks through the inherent mode that the E10 value of strontium titanate varistor in the prior art only forms in the oxidation process of the substrate.
[0076] Referring to the Masafumi conductive structure model as shown in
TABLE-US-00005 TABLE 4 Comparison of related parameters of substrate oxidation at high temperature and silver electrode burning-infiltration sintering and substrate oxidation permeating process Final product treatment process of electrode voltage treatment treatment treatment treatment voltage E10 temperature time temperature time value ° C. h ° C. min V Examples 930 4.5 820 40 17-29 1-10 945 9.5 820 40 25-34 Comparative 945 9.5 600 50 16~21 example 1 Comparative 945 9.5 830 60 18~21 example 2 Note: the sintering and infiltration process of electrode of comparative example 2 shall be carried out in protective atmosphere.
[0077] The above described embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Any modification, equivalent replacement and improvement within the spirit and principle of the present invention should be included in the protection scope of the present invention.