Optoelectronic Component and Method for Producing an Optoelectronic Component

Abstract

In an embodiment an optoelectronic component includes an optoelectronic semiconductor chip, an optical element and a chip carrier, wherein the semiconductor chip is arranged on the chip carrier, wherein the optical element is arranged downstream of the semiconductor chip in a radiation direction and is attached to an optic carrier by an adhesive layer, wherein a potting forms a frame around the optical element, the optic carrier and the adhesive layer which extends from the optical element to the optic carrier, wherein the potting fixes the optical element in its position relative to the semiconductor chip, wherein the optic carrier and the chip carrier are one piece, and wherein the optic carrier at least partially surrounds the semiconductor chip laterally as seen in the radiation direction.

Claims

1.-16. (canceled)

17. An optoelectronic component comprising: an optoelectronic semiconductor chip; an optical element; and a chip carrier, wherein the semiconductor chip is arranged on the chip carrier, wherein the optical element is arranged downstream of the semiconductor chip in a radiation direction of the semiconductor chip and is attached to an optic carrier by an adhesive layer, wherein a potting forms a frame around the optical element, the optic carrier and the adhesive layer which extends from the optical element to the optic carrier, wherein the potting fixes the optical element in its position relative to the semiconductor chip, wherein the optic carrier and the chip carrier are one piece, and wherein the optic carrier at least partially surrounds the semiconductor chip laterally as seen in the radiation direction.

18. The optoelectronic component according to claim 17, wherein side surfaces of the optical element are at least partially tilted towards the radiation direction, seen in the radiation direction, and wherein the potting is arranged on the side surfaces of the optical element.

19. The optoelectronic component according claim 17, wherein a front side of the optical element is free of the adhesive layer and the potting.

20. The optoelectronic component according to claim 17, wherein the optic carrier comprises at least one recess on a side facing away from the semiconductor chip, and wherein the potting has at least one protrusion which engages in the at least one recess of the optic carrier.

21. The optoelectronic component according to claim 17, wherein the semiconductor chip is a surface-emitting light-emitting diode chip or a surface-emitting laser diode chip.

22. A method for manufacturing an optoelectronic component, the method comprising: providing a substrate having a plurality of cutouts; placing at least one semiconductor chip in each cutout; forming incisions in the substrate between the cutouts so that a plurality of optic carriers connected by a chip carrier are formed; bonding optical elements to the optic carriers such that an optical element is located on each cutout and intermediate spaces are formed between the optical elements above the incisions; filling the incisions and partially the intermediate spaces with a potting; and cutting a composite with a chip carrier, semiconductor chips, optic carriers and optical elements through the potting along separation lines running in the incisions.

23. The method according to claim 22, wherein the bonding of the optical elements is carried out with an adhesive layer which is photochemically cured, and wherein the potting is thermally cured.

24. The method according to claim 22, wherein the optic elements are provided in an optic composite, and wherein, by sawing with a profiled saw blade, the optical elements are produced from the optic composite such that, after the optical elements have been bonded, side surfaces of the optical elements are tilted in a radiation direction towards the radiation direction.

25. The method according to claim 22, wherein the substrate comprises a plurality of voids between the cutouts, and wherein the incisions are formed in the substrate in regions of the voids so that each of the resulting optic carriers comprises a recess in a region of a void.

26. The method according to claim 25, wherein filling the incisions with the potting comprises: filling the incisions with the potting in regions of the exposed voids so that the recesses of the optic carriers are each completely filled with the potting, and filling the incisions with the potting.

27. The method according to claim 22, wherein providing the substrate comprises: provide a base layer, and applying a first layer comprises first cavities to the base layer, wherein the first cavities form the cutouts of the substrate.

28. The method according to claim 27, wherein a second layer is arranged between the base layer and the first layer, the second layer comprising second and third cavities, and the second cavities and the first cavities being congruent in plan view of the base layer, wherein the first and second cavities form the cutouts of the substrate, and wherein the third cavities form voids of the substrate.

29. The method according to claim 27, wherein the layers of the substrate are ceramic layers and the layers are at least partially bonded by firing.

30. An optoelectronic component comprising: an optoelectronic semiconductor chip; an optical element; and a chip carrier, wherein the semiconductor chip is arranged on the chip carrier, wherein the optical element is arranged downstream of the semiconductor chip in a radiation direction of the semiconductor chip and is attached to an optic carrier by an adhesive layer, wherein a potting forms a frame around the optical element, the optic carrier and the adhesive layer which extends from the optical element to the optic carrier, and wherein the potting fixes the optical element in its position relative to the semiconductor chip.

31. The optoelectronic component according to claim 30, wherein the optic carrier is formed by the semiconductor chip, wherein the potting at least partially covers flanks of the semiconductor chip.

32. A method for manufacturing the optoelectronic component according to claim 31, the method comprising: arranging the semiconductor chip on the chip carrier, bonding the optical element to the semiconductor chip on a surface of the semiconductor chip facing away from the chip carrier; and applying the potting to the carrier so that flanks of the semiconductor chip and the optical element are covered by the potting.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Further advantageous embodiments and developments of the optoelectronic component and the method will become apparent from the exemplary embodiments described below in association with the schematic drawings. In and figures, similar or similarly acting constituent parts are provided with the same reference symbols. The elements illustrated in the figures and their size relationships among one another should not be regarded as true to scale. Rather, individual elements may be represented with an exaggerated size for the sake of better representability and/or for the sake of better understanding.

[0058] In the figures:

[0059] FIGS. 1 to 3 show exemplary embodiments of the optoelectronic component in sectional views perpendicular to its main extension plane;

[0060] FIGS. 4 to 6 show different method stages of a first exemplary embodiment of a method of manufacturing an optoelectronic component by means of sectional views;

[0061] FIGS. 7 to 12A-12B and 16 show different method stages of a second exemplary embodiment of a method of manufacturing an optoelectronic component by means of sectional views; and

[0062] FIGS. 13 to 15 different stages of a method of manufacturing a substrate by means of plan views of the substrate.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

[0063] The optoelectronic component 1 of FIG. 1 comprises an optoelectronic semiconductor chip 2. The optoelectronic semiconductor chip 2 is arranged on a chip carrier 5. The semiconductor chip 2 is bonded to the chip carrier 5, for example, by means of a silver conductive adhesive. The semiconductor chip 2 is configured to generate electromagnetic radiation, for example. The semiconductor chip 2 comprises, for example, a semiconductor layer sequence based on a III-V compound semiconductor material and comprises an active zone. In the intended operation, electromagnetic radiation is generated in particular in the active zone and emitted by the semiconductor chip 2 in radiation direction 7.

[0064] The semiconductor chip 2 is, for example, a light-emitting diode chip, called LED for short, or a laser diode chip, preferably a surface-emitting laser diode chip, called VCSEL for short.

[0065] Downstream of the semiconductor chip 2 in a radiation direction 7 is an optical element 3. The optical element 3 is, for example, a glass lens or a microlens array and is configured for beam shaping, in particular for beam expansion.

[0066] The optical element 3 is bonded to an optic carrier 12 with an adhesive layer 6. The adhesive layer 6 comprises, for example, a silicone-based adhesive. The optic carrier 12 and the chip carrier 5 are formed in one piece. For example, the chip carrier 5 and the optic carrier 12 are formed with a ceramic material, such as AlO or AlN. The semiconductor chip 2 is spaced apart from the optic carrier 12 and the optical element 3.

[0067] The optoelectronic component 1 of FIG. 1 also comprises a potting 4 which forms a frame around the optical element 3, the optic carrier 12 and the adhesive layer 6 which extends from the optical element 3 to the optic carrier 12. In the present case, the potting 4 also extends to the chip carrier 5. The potting 4 thus fixes the optical element 3 in its position relative to the semiconductor chip 2. The potting 4 is arranged directly at the optical element 3, the adhesive layer 6, the optic carrier 12 and the chip carrier 5.

[0068] To achieve stronger fixation, side surfaces 8 of the optical element 3 are at least partially tilted towards the radiation direction 7. In particular, the side surfaces 8 enclose an acute angle 10 with a back side 11 of the optical element 3 facing the semiconductor chip 2.

[0069] In intended operation, radiation emitted by the optoelectronic component 1 emerges in particular via a front side 9. The front side 9 of the optical element 3 is opposite to the back side 11. The front side 9 is free of the potting 4 and/or the adhesive layer 6. Thus, an influence of the adhesive layer 6 and/or the potting 4 on the emission properties of the optoelectronic component 1 can be reduced.

[0070] The optoelectronic component 1 of FIG. 2 comprises essentially the same features as the component 1 of FIG. 1, with the difference that the optic carrier 12 has a recess 13 on a side facing away from the semiconductor chip 2. The potting 4 has a protrusion 14 which engages in the recess 13. The protrusion 14 and the recess 13 are in particular corresponding to each other. The protrusion 14 completely fills the recess 13. This allows the mechanical stability of the optoelectronic component 1 to be further increased.

[0071] In the optoelectronic component 1 according to the exemplary embodiment of FIG. 3, the optic carrier 12 is formed by the semiconductor chip 2. The semiconductor chip 2 is arranged on a chip carrier 5. An optical element 3 is arranged on a side of the semiconductor chip 2 facing away from the chip carrier 5. An adhesive layer 6 is located between the semiconductor chip 2 and the optical element 3. The semiconductor chip 2 comprises, for example, the same features as the semiconductor chip 2 of FIGS. 1 and 2.

[0072] As in the exemplary embodiments of FIGS. 1 and 2, the optical element 3 is configured for beam shaping and comprises side surfaces 8 that are tilted toward the radiation direction 7 as viewed in a radiation direction 7. The front side 9 of the optical element 3, which faces away from the semiconductor chip 2, is free from a potting layer 4 and the adhesive layer 6.

[0073] In particular, the potting 4 is formed with the same materials as the potting 4 of the exemplary embodiments of FIGS. 1 and 2 and completely surrounds the semiconductor chip 2 in directions perpendicular to the radiation direction. Furthermore, substantially all outer surfaces of the semiconductor chip 2 that are not covered with the chip carrier 5 or the adhesive layer 6 are covered, in particular directly covered, by the potting 4.

[0074] In the intended operation, the chip carrier 5 serves as current supply energize and to drive the semiconductor chip 2. For example, the chip carrier 5 has one or more metallizations on a side facing the semiconductor chip 2, which are not shown in FIG. 3. Furthermore, it is possible that the chip carrier 5 has at least one through-connection, which is also not shown in the FIG. 3. In the intended operation, the semiconductor chip 2 of FIG. 3 is energized and controlled, for example, via the chip carrier 5 and via a bonding wire 15.

[0075] In particular, the chip carrier 5 of all exemplary embodiments is configured for electrical contacting of the semiconductor chip 2 as the chip carrier of FIG. 3.

[0076] In the method according to FIGS. 4 to 6, a substrate 16 with a plurality of cutouts 17 is provided. Optoelectronic semiconductor chips 2 are arranged in the cutouts 17 (see FIG. 4). The semiconductor chips 2 are arranged in the cutouts 17 by means of silver conductive bonding or silver sintering, for example. Incisions 18 are formed between the cutouts 17. The cutouts 17 and incisions 18 are separated by optic carriers 12. The optic carriers 12 are mechanically connected to each other by a chip carrier 5. For example, the substrate 16 is sawn in the region of the incisions 18.

[0077] An adhesive layer 6 is subsequently applied to the optic carrier 12, for example by stamping or dispensing (see FIG. 5). Optical elements 3 are applied to the adhesive layer 6 and the adhesive layer 6 is cured. Intermediate spaces 28 are formed between the optical elements 3, which are arranged above the incisions 18 in the radiation direction 7. As can be seen in FIG. 5, the incisions 18 and the intermediate spaces 28 are subsequently filled with a potting 4. For example, a liquid potting means is introduced into the intermediate spaces 28 and incisions 18, for example by means of jetting or dispensing. Subsequently, the potting means is cured, for example thermally, so that the potting 4 is formed. The potting 4 comprises, for example, an epoxy or silicone filled with SiO2.

[0078] The chip carrier 5 is then completely cut through the potting 4 along separation lines 19 (see FIG. 6). The separation lines 19 run in the incisions 18 and the intermediate spaces 28. The cutting through is carried out, for example, by sawing. The cutting results in a plurality of optoelectronic components 1. The optoelectronic components 1 are, for example, each a component 1 according to the exemplary embodiment of FIG. 1.

[0079] The method according to a second exemplary embodiment, as illustrated in FIGS. 7 to 10, comprises essentially the same steps and features as the method of FIGS. 4 to 6. Different to the method of FIGS. 4 to 6, the provided substrate 16 comprises a plurality of voids 20 (see FIG. 7). In particular, the voids 20 are completely surrounded by the substrate 16. During the formation of the incisions 18, the voids 20 are opened (see FIG. 8). After the incisions 18 have been formed, the optic carriers 12 are each formed with a recess 13.

[0080] By filling the incisions 18 with the potting 4, the potting 4 has protrusions 14 which correspond to the recesses 13 (see FIG. 9). After the chip carrier 5 has been completely cut through, a plurality of optoelectronic components 1 is thus produced according to the exemplary embodiment of FIG. 2 (see FIG. 10).

[0081] FIG. 11 illustrates a method step in which a plurality of optical elements 3 are produced from an optic composite. For example, an optic composite is cut with a profiled saw blade so that each of the optical elements 3 comprises an inclined side surfaces 8. In particular, the optical elements 3 of all exemplary embodiments can be generated from an optic composite.

[0082] FIG. 12 illustrates a method step in which a potting 4 is introduced into an incision 18, wherein optic carriers 12 comprise recesses 13. In a first step, a liquid potting means is filled in the region of the recesses 13 (see FIG. 12A). Capillary forces are utilized so that air inclusions in the potting 4 can be reduced. Subsequently, the remaining incision 18 and an intermediate space 28 arranged above the incision 18 are filled with the potting 4 (see FIG. 12B).

[0083] FIGS. 13 to 15 illustrate how a substrate is created, which is provided for example in FIG. 7. First, a base layer 21, for example made of a ceramic material such as AlN or AlO, is provided (see FIG. 13). The base layer comprises, for example, several ceramic sublayers, also called green bodies.

[0084] Subsequently, a second layer 24 is applied (see FIG. 14). The second layer 24 is formed, for example, from a ceramic material such as AlO or AlN and comprises, for example, several ceramic sublayers. In a plan view of the second layer 24, these partial layers are in particular congruent.

[0085] The second layer 24 comprises second cavities 25 and third cavities 26. The second and third cavities 25, 26 completely penetrate the second layer 24. In a plan view of the base layer 21, as shown in FIG. 14, the base layer 21 can be seen in the first and second cavities 25, 26.

[0086] Subsequently, a first layer 22 is applied to the second layer 24, so that the second layer 24 is arranged between the base layer 21 and the first layer 22 (see FIG. 15). The first layer 22 has first cavities 23 which, in a plan view of the base layer 21, are congruent with the second cavities 25 of the second layer 24. Thus, the base layer 21 can be seen in the first cavities 23. The first cavities 23 completely penetrate the first layer 22. The first layer 22 is formed, for example, with the same material as the second layer 24 and/or the base layer 21. The first layer 22 comprises, for example, like the second layer 24, a plurality of sub-layers which are congruent in a plan view of the first layer 22.

[0087] Subsequently, the base layer 21 and the first and second layers 22, 24 are connected, for example by firing (see FIG. 15). It is possible for all three layers 21, 22, 24 to be connected in a common firing process and for these to be connected to form a one-piece substrate 16.

[0088] Alternatively, it is possible, for example, for the first layer 22 and the second layer 24 to be connected separately to one another by firing and then applied to the base layer 21. In this case, the base layer 21 is fired independently of the first and second layers 22, 24. Firing of the base layer 21 is carried out, for example, before application of the second layer 24 (see FIG. 14). In this case, the first and second layers 22, 24 may be formed of a material that is different from the material of the base layer 21. For example, the first and second layers 22, 24 are formed with AlO and the base layer 21 is formed with AlN. Advantageously, ceramic layers made of AlO are less expensive to manufacture.

[0089] By connecting the base layer 21 of the first layer 22 and the second layer 24, a substrate 16 is created, which is shown in sectional view in FIG. 7, for example. Here, the first cavities 23 and the second cavities 25 together form cutouts 17 of the substrate 16, 17. The third cavities 26 form the voids 20.

[0090] FIG. 16 illustrates in a plan view of the substrate 16 the method step illustrated in sectional view in FIG. 8. In FIG. 16, it can be seen that the incisions 18 in the substrate 16 used to form the optic carriers 12 and open the voids 20 run along grid lines of a regular rectangular grid.

[0091] Unless otherwise indicated, the components shown in the figures preferably follow one another directly in the sequence indicated. Layers which do not touch in the figures are preferably spaced apart. Insofar as lines are drawn parallel to one another, the corresponding surfaces are preferably also aligned parallel to one another. Also, unless otherwise indicated, the relative positions of the drawn components to each other are realistically reproduced in the figures.

[0092] The invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary embodiments. Rather, the invention encompasses any new feature and also any combination of features, which in particular comprises any combination of features in the patent claims and any combination of features in the exemplary embodiments, even if this feature or this combination itself is not explicitly specified in the patent claims or exemplary embodiments.