Heat-assisted magnetic recording (HAMR) write head with protective multilayer film for near-field transducer
11776566 · 2023-10-03
Assignee
Inventors
Cpc classification
G11B5/314
PHYSICS
G11B13/08
PHYSICS
G11B5/40
PHYSICS
G11B5/3906
PHYSICS
International classification
G11B11/105
PHYSICS
G11B13/08
PHYSICS
G11B5/00
PHYSICS
G11B5/40
PHYSICS
Abstract
A heat-assisted magnetic recording (HAMR) head has a protective multilayer confined to a window of the disk-facing surface of the slider that surrounds the near-field transducer (NFT) end and write pole end. The protective multilayer is made up of a first film of silicon nitride directly on and in contact with the NFT end and the write pole end and a second film of a metal oxide on and in contact with the silicon nitride film. The silicon nitride film is preferably formed by RIBD but is thin enough so that it does not contain any significant amount of other compounds. The metal oxide is preferably silicon dioxide, or alternatively an oxide of hafnium, tantalum, yttrium or zirconium, and together with the silicon nitride film provides a protective multilayer of sufficient thickness to be optically transparent to radiation and resistant to thermal oxidation.
Claims
1. A method for forming a protective multilayer on a window region of a substrate surface, the method comprising: providing a substrate having a near-field transducer (NFT) end and a write pole end located at the substrate surface in the window region; depositing on the NFT end and write pole end a first film consisting essentially of silicon nitride by one of (a) ion beam deposition (IBD) from a target consisting essentially of silicon nitride in an atmosphere consisting essentially of argon and (b) reactive ion beam deposition (RIBD) from a target consisting essentially of silicon in an atmosphere consisting essentially of argon and nitrogen; and depositing on the silicon nitride film a second film consisting essentially of a metal oxide selected from one of silicon dioxide, hafnium oxide, tantalum oxide, yttrium oxide and zirconium oxide by RIBD from a target consisting essentially of the selected metal in an atmosphere consisting essentially of argon and oxygen.
2. The method of claim 1 wherein depositing the first film consists of depositing silicon nitride by RIBD from a target consisting essentially of silicon in an atmosphere consisting essentially of argon and nitrogen.
3. The method of claim 1 wherein depositing the second film consists of depositing silicon dioxide.
4. The method of claim 3 further comprising treating the surface of the silicon dioxide film with a plasma consisting essentially of one of carbon tetrafluoride, nitrogen, and a mixture of nitrogen and hydrogen.
5. The method of claim 1, wherein the substrate comprises a slider, an adhesion film disposed on the slider, and a diamond-like carbon (DLC) overcoat disposed on the adhesion film.
6. The method of claim 5, wherein the adhesion film has a thickness of between about 0.2 and 0.5 nm.
7. The method of claim 5, wherein the DLC overcoat has a thickness of between about 1.5 and 2.5 nm.
8. The method of claim 5, wherein the slider comprises NFT material and write pole material.
9. The method of claim 8, wherein the NFT material comprises Au or Au alloy.
10. The method of claim 8, wherein the write pole comprises CoFe or CoFeNi alloy.
11. The method of claim 1, wherein the second film comprises silicon dioxide.
12. The method of claim 11, wherein the silicon nitride and silicon dioxide collectively have a thickness of 25 Angstroms.
13. The method of claim 12, wherein the silicon nitride and silicon dioxide collectively have a k value of 0.162.
14. The method of claim 12, wherein the silicon nitride and silicon dioxide have a plasmon propagation coefficient of 0.211 dB/μm.
15. The method of claim 11, wherein the silicon nitride and silicon dioxide collectively have a thickness of 40 Angstroms.
16. The method of claim 15, wherein the silicon nitride and silicon dioxide collectively have a k value of 0.109.
17. The method of claim 15, wherein the silicon nitride and silicon dioxide have a plasmon propagation coefficient of 0.248 dB/μm.
18. The method of claim 1, wherein the silicon dioxide has a thickness of between about 3-5 nm.
19. A method for forming a protective multilayer on a window region of a substrate surface, the method comprising: providing a substrate having a near-field transducer (NFT) end and a write pole end located at the substrate surface in the window region; depositing on the NFT end and write pole end a first film consisting essentially of silicon nitride by reactive ion beam deposition (RIBD) from a target consisting essentially of silicon in an atmosphere consisting essentially of argon and nitrogen; and depositing on the silicon nitride film a second film consisting essentially of silicon dioxide by RIBD from a target consisting essentially of silicon in an atmosphere consisting essentially of argon and oxygen.
20. The method of claim 19 further comprising treating the surface of the silicon dioxide film with a plasma consisting essentially of one of carbon tetrafluoride, nitrogen, and a mixture of nitrogen and hydrogen.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
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(7) The drive 100 has a housing or base 112 that supports an actuator 130 and a drive motor (not shown) for rotating the magnetic recording disk 200. The actuator 130 may be a voice coil motor (VCM) rotary actuator that has a rigid arm 131 and rotates about pivot 132 as shown by arrow 133. A head-suspension assembly includes a suspension 135 that has one end attached to the end of actuator arm 131 and a head carrier, such as a gas-bearing slider 120, attached to the other end of suspension 135. The suspension 135 permits the slider 120 to be maintained very close to the surface of disk 200 and enables it to “pitch” and “roll” on the gas-bearing, typically air or helium, generated by the disk 200 as it rotates in the direction of arrow 20. The slider 120 supports the HAMR head (not shown), which includes a magnetoresistive read head, an inductive write head, the near-field transducer (NFT) and optical waveguide. A semiconductor laser 90, for example with a wavelength of 780 to 980 nm, may be used as the HAMR light source and is depicted as being supported on the top of slider 120. Alternatively, the laser may be located on suspension 135 and coupled to slider 120 by an optical channel. As the disk 200 rotates in the direction of arrow 20, the movement of actuator 130 allows the HAMR head on the slider 120 to access different data tracks 118 on disk 200. The slider 120 is typically formed of a composite material, such as a composite of alumina/titanium-carbide (Al.sub.2O.sub.3/TiC). Only one disk surface with associated slider and read/write head is shown in
(8) In the following drawings, the X direction denotes a direction perpendicular to the gas-bearing surface (GBS) of the slider, the Y direction denotes a track width or cross-track direction, and the Z direction denotes an along-the-track direction.
(9) The gas-bearing slider 120 is supported by suspension 135. The slider 120 has a recording-layer-facing surface 122 onto which an overcoat 124 is deposited. The overcoat 124 is typically a DLC overcoat whose outer surface forms the GBS of the slider 120. An optional adhesion undercoat (not shown), such as a silicon (Si) or a silicon nitride (SiNx) film, may be deposited on the surface 122 before deposition of the overcoat 124. The slider 120 supports the magnetic write head 50, magnetoresistive (MR) read head 60, and magnetically permeable read head shields S1 and S2. A recording magnetic field is generated by the write head 50 made up of a coil 56, a main magnetic pole 53 for transmitting flux generated by the coil 56, a write pole 55 with end 52, and a return pole 54. A magnetic field generated by the coil 56 is transmitted through the magnetic pole 53 to the write pole end 52 located near an optical near-field transducer (NFT) 74. The write head 50 is typically capable of operating at different clock rates so as to be able to write data at different frequencies. The NFT 74, also known as a plasmonic antenna, typically uses a low-loss metal (e.g., Au, Ag, Al or Cu) shaped in such a way to concentrate surface charge motion at a tip located at the slider GBS when light from the waveguide 73 is incident. Oscillating tip charge creates an intense near-field pattern, heating the recording layer 31. Sometimes, the metal structure of the NFT can create resonant charge motion (surface plasmons) to further increase intensity and heating of the recording layer. At the moment of recording, the recording layer 31 of disk 200 is heated by the optical near-field generated by the NFT 74 and, at the same time, a region or “bit” 34 is magnetized and thus written onto the recording layer 31 by applying a recording magnetic field generated by the write pole end 52.
(10) A semiconductor laser 90 is mounted to the top surface of slider 120. An optical waveguide 73 for guiding light from laser 90 to the NFT 74 is formed inside the slider 120. The laser 90 is typically capable of operating at different power levels. Materials that ensure a refractive index of the waveguide 73 core material to be greater than a refractive index of the cladding material may be used for the waveguide 73. The waveguide 73 that delivers light to NFT 74 is preferably a single-mode waveguide.
(11) The reliability of the NFT is much worse under actual recording conditions on a disk than under similar conditions in vacuum or ambient air. This is believed to be due to accelerated oxidation of the slider DLC overcoat due to the high gas pressure (20 or more atmospheres) generated at the GBS by the high disk rotational speed (5-15 kRPM), or by “back-heating”, i.e., heating of the NFT because of slider-disk frictional heating, conduction from the disk and/or the accumulation of opaque carbonaceous material near the NFT. Back-heating can cause diffusion of the NFT metal until the NFT tip rounds and recording degrades.
(12) In embodiments of this invention the HAMR write head has a window protective multilayer made up of a first film of silicon nitride directly on and in contact with the NFT end and the write pole end and a second film of a metal oxide directly on and in contact with the silicon nitride film.
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(14) In all embodiments, the window is depicted as being circular but could have other shapes, provided it covers both the NFT and write pole ends. Preferably the window would not be so large as to also cover the read head (item 160 in
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(16) Next, in
(17) In
(18) In one embodiment of the method an optional surface treatment can be performed on the surface of the silicon dioxide film. The silicon dioxide film surface can be subjected to a plasma consisting essentially of one of carbon tetrafluoride (CCl.sub.4), nitrogen (N.sub.2), and a mixture of nitrogen and hydrogen (N.sub.2+H.sub.2).
(19) In all embodiments it is important that the silicon nitride film be the first film and the silicon dioxide film, or other metal oxide film, be the second film. If the order of the films is reversed, the NFT and write pole will become oxidized and deform. This is because to fabricate the silicon dioxide film with good stoichiometry and good optical transparency it is deposited using RIBD with argon-oxygen plasma. It has been discovered that the silicon nitride should be at least 0.5 nm thick to avoid NFT and write pole oxidation during the subsequent silicon dioxide deposition.
(20) Table 1 shows the optical performance as measured by the Attenuated Total Reflectance (ATR) method for similar thicknesses of a single silicon nitride layer and the multilayer according to embodiments of the invention. Surface plasmon propagation coefficient (Gspp) describes the amount of light loss (dB) per distance traveled (μm). The extinction coefficient k is a measure of light absorption. The Si.sub.3N.sub.4/SiO.sub.2 multilayers exhibited lower Gspp and k values, which signifies a more optically transparent layer, for both the 25 Å and 40 Å thick layers.
(21) TABLE-US-00001 TABLE 1 Protective layer Thickness (Å) Gspp (dB/μm) k Single layer Si.sub.3N.sub.4 25 0.266 0.331 50 0.278 0.152 Si.sub.3N.sub.4/SiO.sub.2 25 (10 Å/15 Å) 0.211 0.162 Multilayer 40 (20 Å/20 Å) 0.248 0.109
(22) The resistance to thermal oxidation for the multilayers was tested on Ni28Fe72 coupons with various Si.sub.3N.sub.4/SiO.sub.2 multilayer thicknesses. The coupons were subjected to 300° C. in oven at ambient atmosphere. After a specified annealing time they were removed from the oven and analyzed with Raman spectroscopy to test for Fe oxide formation. The data showed that a 20 Å Si.sub.3N.sub.4/10 Å SiO.sub.2 multilayer provides thermal oxidation protection equivalent to a single 30 Å Si.sub.3N.sub.4 layer, where the time to detect the Fe oxide peak was greater than 10 hours.
(23) While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention. Accordingly, the disclosed invention is to be considered merely as illustrative and limited in scope only as specified in the appended claims.