SPUTTER MAGNETRON FOR OPERATING WITH OTHER PLASMA SOURCES
20230282466 ยท 2023-09-07
Assignee
Inventors
Cpc classification
C23C14/35
CHEMISTRY; METALLURGY
H01J37/3461
ELECTRICITY
International classification
Abstract
A sputtering magnetron apparatus is provided. Another aspect employs a set of magnet assembly that forms a magnetic field over the target surface to confine electrons. A further aspect of a sputtering magnetron includes a side dark space shield that is made of magnetic metal which shunts the magnetic flux leaking from the side to prevent the formation of a secondary plasma around the dark space shield when it operates simultaneously with another plasma source.
Claims
1. A sputter magnetron apparatus comprising: (a) a set of magnet assembly that includes a center magnet and a side magnet, which work together to generate a primary magnetic field above a sputter target to effectively confine electrons during sputter discharge; (b) a set of side dark space shield that is made of magnetic metal, which shunts a secondary magnetic flux leaking from side to an extent to prevent the generation of a secondary plasma around the dark space shield; (c) A bottom shunt that is adjacent to the dark space shield from the side.
2. The apparatus of claim 1, wherein the sputter magnetron has a circular shape and the dark space shield has a circular hollow cylinder shape. At least part of the dark space shield is made of a magnetic metal that can shunt side magnetic flux.
3. The apparatus of claim 1, wherein the sputter magnetron has a rectangular shape and the dark space shield consists of at least four sides. At least one side or part of one is made of magnetic metal that can shunt side magnetic flux.
4. The apparatus of claim 1, further comprising a single ion beam, with ions being substantially uniformly distributed around the emission axis when viewed in cross-section, emitted through the outlet opening along the emission axis.
5. The sputter magnetron apparatus of claim 1 operates simultaneously with another plasma source that is excited with an electric potential substantially different from the magnetron potential.
6. The apparatus of claim 5, wherein the sputter magnetron operates simultaneously with another plasma source to deposit thin films.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0017] A preferred embodiment of the magnetic flux in a sputtering magnetron can be observed in
[0018] An exemplary sputtering magnetron is illustrated in
[0019] The exemplary sputtering magnetron is a profile of a circular magnetron. The dimensions of the magnets depend on the size of the target to be sputtered. For an exemplary sputtering target of 50.8 mm diameter, the center magnet has a preferred diameter of 6-20 mm and the side ring-shaped magnet has a preferred inner diameter of 34-48 mm and outer diameter of 38-51 mm. For an exemplary sputtering target of 76.2 mm diameter, the center magnet has a preferred diameter of 6-30 mm and the side ring-shaped magnet has a preferred inner diameter of 50-70 mm and outer diameter of 58-76 mm. There are many possible designs of the magnet assembly, which can be practiced by a person with knowledge of magnetron sputtering. The spirit of this invention is to use magnetic steel as an outside shield to shunt leaking secondary magnetic flux out of the dark space shield and prevent secondary plasma.
[0020] The discharge image of an exemplary sputtering magnetron and an ion source can be observed in
[0021] Another preferred embodiment of a magnet assembly in a circular sputtering magnetron can be observed in
[0022] While various embodiments have been disclosed, it should be appreciated that other variations may be employed. For example; specific magnet and shunt quantities and shapes may be varied although some of the desired benefits may not be realized. Additionally, the cathode body, insulator, base plate, and vacuum tubing may be varied, although certain advantages may not be achieved. Furthermore, each of the features may be interchanged and intermixed between any and ail of the disclosed embodiments. Changes and modifications are not to be regarded as a departure from the spirit or the scope of the present invention.
[0023] While operating the sputtering magnetron with an ion source has been disclosed, using the sputtering magnetron with other plasma sources for other applications is not to be regarded as a departure from the spirit or the scope of the present invention.