FEEDER DESIGN WITH HIGH CURRENT CAPABILITY

Abstract

A feeder design is manufactured as a structure in a SiC semiconductor material comprising at least two p-type grids in an n-type SiC material (3), comprising at least one epitaxially grown p-type region, wherein an Ohmic contact is applied on the at least one epitaxially grown p-type region, wherein an epitaxially grown n-type layer is applied on at least a part of the at least two p-type grids and the n-type SiC material (3) wherein the at least two p-type grids (4, 5) are applied in at least a first and a second regions at least close to the at least first and second corners respectively and that there is a region in the n-type SiC material (3) between the first and a second regions without any grids.

Claims

1-29. (canceled)

30. A semiconductor device, comprising: an n-type substrate; an n-type drift layer disposed on the n-type substrate; a first n-type SiC layer disposed on the n-type drift layer; a p-type grid disposed in the first n-type SiC layer; a p-type region disposed on the first n-type SiC layer; and a second n-type SiC layer disposed in contact with the first n-type SiC layer and the p-type region; and an ohmic contact disposed in contact with the p-type region.

31. The semiconductor device of claim 30, wherein the p-type region, the first n-type SiC layer, and the ohmic contact form a PiN diode.

32. The semiconductor device of claim 30, wherein opposing edges of the p-type region overlap with at least a portion of the p-type grid.

33. The semiconductor device of claim 30, wherein a top surface of the p-type grid is coplanar with a bottom surface of the first n-type SiC layer, and wherein one of: the top surface of the p-type grid contacts a lower surface of the p-type region; the top surface of the p-type grid is spaced apart from a lower surface of the p-type region by portions of the second n-type SiC layer; and the top surface of the p-type grid is spaced apart from a lower surface of the p-type region by an entirety of the second n-type SiC layer.

34. The semiconductor device of claim 33, wherein the top surface of the p-type grid contacts opposing edges of the lower surface of the p-type region.

35. The semiconductor device of claim 30, wherein a top surface of the p-type grid is spaced apart from a top surface of the first n-type SiC layer, and wherein a bottom surface of the p-type grid is spaced apart from a bottom surface of the first n-type SiC layer.

36. The semiconductor device of claim 30, wherein at least a portion of the Ohmic contact is disposed in the second n-type SiC layer.

37. The semiconductor device of claim 30, wherein a projection of the p-type region in a first plane parallel with a surface of the n-type substrate has a boundary line limiting the projection of the p-type region, wherein the p-type grid is disposed so that a projection of the p-type grid in a second plane parallel with the surface the n-type substrate is in a surrounding of the boundary line, and wherein a distance from the boundary line to any point in the surrounding is a maximum of 0.5 μm.

38. The semiconductor device of claim 30, wherein a distance, along a direction perpendicular from a surface of the n-type substrate, from a lower part of the p-type region to an upper part of the p-type grid is in a range of 0 μm to 5 μm.

39. The semiconductor device of claim 30, wherein the p-type grid includes an upper part comprising epitaxial growth and a lower part comprising ion implantation.

40. The semiconductor device of claim 30, wherein the semiconductor device is one of a MOSFET, a JFET, a JBS diode, and an insulated-gate bipolar transistor (IGBT).

41. The semiconductor device of claim 30, wherein at least one of the p-type region and the ohmic contact comprises tapered sidewalls.

42. A PiN diode device comprising: a drift layer disposed on a substrate; a first SiC layer having a first conductivity type disposed on the drift layer; a SiC region having a second conductivity type disposed on the first SiC layer; a SiC grid having the second conductivity type disposed in the first SiC layer; a second SiC layer having the first conductivity type disposed in contact with the first SiC layer and the SiC region; and an Ohmic contact disposed in contact with the SiC region, wherein opposing edges of the SiC region overlap with portions of the SiC grid.

43. The device of claim 42, wherein a top surface of the SiC grid is coplanar with a bottom surface of the first SiC layer, and wherein one of: the top surface of the SiC grid contacts a lower surface of the SiC region; the top surface of the SiC grid is spaced apart from a lower surface of the SiC region by portions of the second SiC layer; and the top surface of the SiC grid is spaced apart from a lower surface of the SiC region by an entirety of the second SiC layer.

44. The device of claim 43, wherein the top surface of the SiC grid contacts opposing edges of the lower surface of the SiC region.

45. The device of claim 42, wherein a top surface of the SiC grid is spaced apart from a top surface of the first SiC layer, and wherein a bottom surface of the SiC grid is spaced apart from a bottom surface of the first SiC layer.

46. The device of claim 42, wherein at least a portion of the Ohmic contact is disposed in the second SiC layer.

47. The device of claim 42, wherein a projection of the SiC region in a first plane parallel with a surface of the substrate has a boundary line limiting the projection of the SiC region, wherein the SiC grid is disposed so that a projection of the SiC grid in a second plane parallel with the surface the substrate is in a surrounding of the boundary line, and wherein a distance from the boundary line to any point in the surrounding is a maximum of 0.5 μm.

48. The device of claim 47, wherein a distance, along a direction perpendicular from a surface of the, from a lower part of the SiC region to an upper part of the SiC grid is in a range of 0 μm to 5 μm.

49. The device of claim 42, wherein the SiC grid includes an upper part comprising epitaxial growth and a lower part comprising ion implantation.

50. A diode device comprising: a first n-type SiC layer on a drift layer over a substrate; a p-type SiC region on the first SiC layer; a second n-type SiC layer in contact with the first n-type SiC layer and the p-type SiC region; and an Ohmic contact in contact with the p-type SiC region, wherein a p-type SiC grid is disposed in the first SiC layer, and wherein opposing edges of the p-type SiC region overlap with at least a portion of the p-type SiC grid.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0048] The invention is described with reference to the following drawings in which:

[0049] FIG. 1A shows a schematic cross-sectional view of a buried grid rectifier.

[0050] FIG. 1B shows a schematic cross-sectional view of a P+ epilayer region shielded by extra overlapping P+ grids, or alternatively overlapping and prolonged P+ grids.

[0051] FIG. 1C shows a schematic cross-sectional view of different positioning of the P+ epilayer with spacing from the top of the P+ grids.

[0052] FIG. 1D shows parts of a device according to the invention, some parts are not shown for clarity.

[0053] FIGS. 2A-2G show proposed fabrication process steps for the proposed structure in FIG. 1A as a non-limiting example shown in order to facilitate use of the invention.

[0054] FIGS. 3A-3F show proposed fabrication process steps for the proposed structure in FIG. 1A as a non-limiting example shown in order to facilitate use of the invention.

[0055] FIGS. 4A-4G show proposed fabrication process steps for the proposed structure in FIG. 1A as a non-limiting example shown in order to facilitate use of the invention.

[0056] FIGS. 5A-5E show proposed fabrication process steps for the proposed structure in FIG. 1B as a non-limiting example shown in order to facilitate use of the invention.

[0057] FIGS. 6A-6E show six different proposed fabrication process steps for the proposed structure in FIG. 1B as a non-limiting example shown in order to facilitate use of the invention.

[0058] FIGS. 7A-7G show proposed fabrication process steps for the proposed structure in FIG. 1B as a non-limiting example shown in order to facilitate use of the invention.

DETAILED DESCRIPTION

[0059] FIG. 1A shows a schematic cross-sectional view of a buried grid rectifier with combination of an epitaxial PiN feeder and an implanted grid for shielding with a P+ epilayer region (7) centrally aligned on top of the P+ implanted grids (5).

[0060] FIG. 1B shows a schematic cross-sectional view of a P+ epilayer region (7) shielded by extra overlapping P+ grids (4, 5), or alternatively overlapping and prolonged P+ grids (5).

[0061] FIG. 1C shows a schematic cross-sectional view of different positioning of the P+ epilayer (7) with spacing from the top of the P+ grids (4, 5).

[0062] FIG. 1D shows parts of a device according to the invention, some parts are not shown for clarity. There is shown a substrate (1), a drift layer (2), an n-type SiC material (3), and an epitaxially grown p-type region (7) as well as a plane parallel with the substrate (1) and the projection of the epitaxially grown p-type region (7) in the plane including the boundary line (I) of the projection in the plane. The surrounding of the boundary line (I) in the plane are indicated with solid lines, so that the distance from the boundary line (I) to any point in the surrounding is maximum 0.5 μm. Any corners of the surrounding area are rounded so that the surrounding around the line is determined by a circle with radius 0.5 μm which is moved along the boundary line (I).

[0063] FIGS. 2A-2G, 3A-3F, and 4A-4G, show different proposed fabrication process steps for the proposed structure in FIG. 1A (FIGS. 2-4), and FIGS. 5A-5E, 6A-6E, and 7A-7G show different proposed fabrication process steps for the proposed structure in FIG. 1B. These are non-limiting examples shown in order to facilitate use of the invention.

[0064] Before the invention is disclosed and described in detail, it is to be understood that this invention is not limited to particular compounds, configurations, method steps, substrates, and materials disclosed herein as such compounds, configurations, method steps, substrates, and materials may vary somewhat. It is also to be understood that the terminology employed herein is used for the purpose of describing particular embodiments only and is not intended to be limiting since the scope of the present invention is limited only by the appended claims and equivalents thereof.

[0065] It must be noted that, as used in this specification and the appended claims, the singular forms “a”, “an” and “the” include plural referents unless the context clearly dictates otherwise.

[0066] “Buried grid” as used throughout the description and the claims denotes a grid structure of a material with one conductivity type in a material with the opposite conductivity type.

[0067] “Conductivity type” as used throughout the description and the claims denotes the type of conduction in a semiconductor material. N-type denotes electron conduction meaning that excess electrons move in the semiconductor giving a current flow and p-type denotes hole conduction, meaning that excess holes move in the semiconductor driving a current flow. An n-type semiconductor material is achieved by donor doping and a p-type semiconductor by acceptor dopants. In SiC, nitrogen is commonly used as donor dopant and aluminum as acceptor dopant. If a material is a doped semiconductor such as SiC, the material either has conductivity type p or conductivity type n. A skilled person realizes that in a semiconductor device all n-doped materials can be exchanged to p-doped materials when all p-doped materials are exchanged to n-doped materials, i.e. n and p can change place, and still a similar device can be obtained.

[0068] “Doped” as used throughout the description and the claims denotes that an intrinsic semiconductor such as SiC has got added impurities to modulate its electrical properties and become an extrinsic semiconductor.

[0069] “Epitaxial” as used throughout the description and the claims denotes that the material has been manufactured with epitaxial growth, in this case epitaxial growth of SiC.

[0070] “Substrate” as used throughout the description and the claims denotes a piece of material on which the power device is built up.

[0071] If nothing else is defined, any terms and scientific terminology used herein are intended to have the meanings commonly understood by those of skill in the art to which this invention pertains.

[0072] In a first aspect there is provided a structure in a SiC semiconductor material comprising a n-type substrate (1), a n-type drift layer (2), at least two p-type grids (4, 5) in an n-type SiC material (3), wherein the structure comprises an n-type epitaxially grown layer of SiC (8), wherein the epitaxially grown n-type layer (8) is in contact with the at least two p-type grids (4, 5) and the n-type SiC material (3), wherein the n-type epitaxially grown layer (8) is in contact with at least one epitaxially grown p-type region (7), wherein an Ohmic contact (9) is in contact with the at least one epitaxially grown p-type region (7), wherein a projection of the at least one epitaxially grown p-type region (7) in a plane parallel with the n-type substrate (1) has a boundary line (I) limiting the projection of the at least one epitaxially grown p-type region (7), wherein the p-type grid(s) (5) is applied at least so that a projection of the p-type grid(s) (5) in a plane parallel to the n-type substrate (1) is in a surrounding of the boundary line (I), so that the distance from the boundary line (I) to any point in the surrounding is maximum 0.5 μm, and wherein the p-type grid(s) (5) also is applied only so that the distance from the lower part of the at least one epitaxially grown p-type region (7) to the upper part of the p-type grid(s) (5) is in the range 0-5 μm, the direction up is given by the direction perpendicular away from the n-type substrate (1).

[0073] The surrounding of the boundary line (I) can be determined so that a circle with radius 0.5 μm is moved along the boundary line (I) and the area swept over by the circle is within the surrounding so that the distance from the boundary line (I) to any point in the surrounding is maximum 0.5 μm. This is applicable to any shape of the boundary line (I). If the epitaxially grown p-type region (7) has the form of a very long trench there may be two boundary lines. If viewed from above, i.e. from a position looking at the largest area of the substrate (1), then the p-type grid (5) is applied close to the boundary of the epitaxially grown p-type region (7), more in particular within ±0.5 μm from the boundary line. This defines a surrounding of ±0.5 μm from the boundary line and the p-type feeder layer (5) is applied at least in this surrounding, it can also be applied outside this surrounding. The p-type grid (5) should also be applied fairly close to the epitaxially grown p-type region (7), seen from the side, i.e. looking at a cross cut of the device. Then the p-type grid (5) is either in contact with the epitaxially grown p-type region (7), or maximum 5 μm below the epitaxially grown p-type region (7). Since the projection of the epitaxially grown p-type region (7) is used to determine the boundary line (I), the largest part of the epitaxially grown p-type region (7) determines the position of the p-type grid (5). Since the cross section of the p-type grid (5) in the cross section seen in FIG. 1D is fairly close to rectangular, the condition will imply that the p-type grid (5) is applied at least close to the corners where they will mitigate the effects of the corners on the electrical field.

[0074] In one embodiment the at least one epitaxially grown p-type region (7) is in contact with the at least one of the at least two p-type grids (4, 5).

[0075] In one embodiment the at least one epitaxially grown p-type region (7) is not in contact with the at least two p-type grids (4, 5).

[0076] In one embodiment the at least two p-type grids (4, 5) each comprises a plurality of ion implanted grids.

[0077] In one embodiment the width of the at least one epitaxially grown p-type region (7) is in the interval 5-500 μm.

[0078] In one embodiment the thickness of the at least one epitaxially grown p-type region (7) is in the interval 1-3 μm.

[0079] In one embodiment the doping concentration of the at least one epitaxially grown p-type region (7) varies from closest to the n-type SiC material (3) to closest to the Ohmic contact (9).

[0080] In one embodiment the doping concentration of the at least one epitaxially grown p-type region (7) is highest closest to the Ohmic contact (9).

[0081] In one embodiment the doping concentration of the at least one epitaxially grown p-type region (7) is in the interval 5e17 cm-3 to 1e19 cm-3 except in a layer closest to the Ohmic contact (9) where it is in the interval 1e19 cm-3 to 3e20 cm-3.

[0082] In one embodiment the center of the at least one epitaxially grown p-type region (7), calculated as the center of gravity, is aligned with the center of the region in the n-type SiC material (3) between the first and a second regions without any grids.

[0083] In one embodiment there is a space between the at least one epitaxially grown p-type region (7) and the at least two p-type grids (4, 5) in the n-type SiC material (3), optionally with a connection between the at least one epitaxially grown p-type region (7) and the at least two p-type grids (4, 5)

[0084] In one embodiment the at least one epitaxially grown p-type region (7) is applied directly on the at least two p-type grids (4, 5) in an n-type SiC material (3).

[0085] In one embodiment there are at least four p-type grids (4, 5) and wherein the at least two p-type grids (5) closest to the at least first and second corners respectively are larger than the remaining p-type grids (4).

[0086] In one embodiment the doping concentration of the at least two p-type grids (4, 5) is in the interval 3e17 cm-3 to 3e20 cm-3, wherein the thickness of the at least two p-type grids (4, 5) is in the interval 0.5 to 2.5 μm, wherein the width of each of the at least two p-type grids (4, 5) is at least 0.5 μm.

[0087] In one embodiment there are at least three two p-type grids (4, 5), and wherein the space between two adjacent p-type grids (4, 5) is in the interval 1 to 5 μm, not taking into account the region in the n-type SiC material (3) between the first and a second regions without any grids as a space.

[0088] In one embodiment the thickness of the epitaxially grown n-type layer (8) is at least 0.5 μm and the doping concentration is in the interval 1e14 cm-3 and 1e17 cm-3.

[0089] In one embodiment the thickness of the epitaxially grown n-type layer (8) is at least 0.5 μm thicker than the at least one epitaxially grown p-type region (7).

[0090] In one embodiment the at least two p-type grids (4, 5) comprise a plurality of grids, wherein at least a part of the grids has a ledge positioned centered under the grid, said ledge positioned in a direction away from the epitaxially grown n-type layer (8), said ledge having a smaller lateral dimension than the grid. This feature increases the electric filed shielding efficiency of the grid which is reducing the electric field on the surface of the device. This increases the blocking voltage and lower the leakage current without adding forward resistance. Alternatively a wider grid spacing can be used with this design, leading to lower on-resistance. The structure is more tolerant to process variations such as misalignment, dose and energy variation in ion implantation, etching depth etc.

[0091] In one embodiment the at least two p-type grids (4, 5) comprise a plurality of grids and wherein each grid comprises an upper part and a lower part said upper part is towards the epitaxially grown n-type layer (8), and wherein the upper part is manufactured using epitaxial growth and wherein the lower part is manufactured using ion implantation. In this embodiment it is possible to manufacture a grid with rounded corners as well as an upper part with a high doping level. It is possible to manufacture a component with efficient voltage blocking, high current conduction, low total resistance, high surge current capability, and fast switching.

[0092] In one embodiment the at least two p-type grids (4, 5) are manufactured by ion implantation.

[0093] In a second aspect there is provided a device comprising a structure as described above. In one embodiment the device is selected from the group consisting of a MOSFET, a JFET, a JBS diode, and an insulated-gate bipolar transistor (IGBT). In one embodiment the device is an integration of at least two components such as at least two of the mentioned components. One non-limiting example of an integration of at least two components is a MOSFET and a Schottky diode.

[0094] In a third aspect there is provided a method for the manufacture of a structure in SiC as described above and comprising the steps of: [0095] a) providing a substrate with a drift layer and an n-type SiC material (3) on top, [0096] b) adding a p-type layer by epitaxial growth of SiC, [0097] c) etching away unwanted parts of the added p-type layer to obtain at least one epitaxially grown p-type region (7), [0098] d) creating at least two p-type grids (4, 5) by ion implantation in the n-type SiC material (3), [0099] e) adding an n-type layer (8) by epitaxial growth of SiC.

[0100] In one embodiment step d) is carried out before step b).

[0101] In one embodiment the steps are carried out in the order: a), b), c), d), e).

[0102] In one embodiment the steps are carried out in the order: a), d), e), b), c) with an additional step of etching a trench in the n-type layer (8) after step e), in a region intended for the at least one epitaxially grown p-type region (7).

[0103] In one embodiment the method comprises the step of adding an Ohmic contact (9) at least partially on the at least one epitaxially grown p-type region (7).

[0104] In one embodiment the method comprises the step of adding a metal coating (12).

[0105] The skilled person realizes that even if the claims and the description define p-type grids (4, 5) in an n-type SiC material (3), an n-type epitaxially grown layer and so on, all n-type and p-type materials can be interchanged so that all n-doped (n-type) materials are p-doped (p-type) materials and so that all p-doped (p-type) materials are n-doped (n-type) materials. Today the most common commercially available substrates are n-type and thus a n-type substrate has been chosen in the claims and in the description, but the invention can with equally good result be used if all n-type and p-type materials are interchanged.