Optical waveguide device

Abstract

An optical waveguide device including an optical waveguide substrate that has an electro-optic effect, is a crystal having anisotropy in thermal expansion rate, has a thickness set to 10 μm or lower, and includes an optical waveguide and a holding substrate that holds the optical waveguide substrate, the optical waveguide substrate and the holding substrate being joined to each other, in which the holding substrate is formed of a crystal having a lower dielectric constant than the optical waveguide substrate and having anisotropy in thermal expansion rate, and the optical waveguide substrate and the holding substrate are joined to each other such that differences in thermal expansion rate between the optical waveguide substrate and the holding substrate become small in different axial directions on a joint surface.

Claims

1. An optical modulator comprising: an optical waveguide substrate that has an electro-optic effect, is a crystal having anisotropy in a thermal expansion rate, has a thickness set to 10 μm or lower, and includes an optical waveguide; and a holding substrate that holds the optical waveguide substrate, the optical waveguide substrate and the holding substrate being directly bonded to each other, wherein the holding substrate is formed of a crystal having a lower dielectric constant than the optical waveguide substrate and having anisotropy in a thermal expansion rate, and the optical waveguide substrate and the holding substrate are joined to each other such that differences in the thermal expansion rates between the optical waveguide substrate and the holding substrate are set to become 5 ppm/° C. or lower in both anisotropic axial directions on a joint surface.

2. The optical modulator according to claim 1, wherein the optical waveguide substrate is formed of lithium niobate or lithium tantalate, and the holding substrate is formed of an α-quartz single crystal.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a cross-sectional view showing a first example of an optical waveguide device according to the present invention.

(2) FIG. 2 is a cross-sectional view showing a second example of the optical waveguide device according to the present invention.

(3) FIG. 3 is a cross-sectional view showing a third example of the optical waveguide device according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

(4) Hereinafter, the present invention will be described in detail using preferred examples.

(5) The present invention is an optical waveguide device including, as shown in FIGS. 1 to 3, an optical waveguide substrate 1 that has an electro-optic effect, is a crystal having anisotropy in thermal expansion rate, has a thickness t set to 10 μm or lower, and includes optical waveguides 3 and a holding substrate 4 that holds the optical waveguide substrate, the optical waveguide substrate 1 and the holding substrate 4 being joined to each other, in which the holding substrate 4 is formed of a crystal having a lower dielectric constant than the optical waveguide substrate 1 and having anisotropy in thermal expansion rate, and the optical waveguide substrate and the holding substrate are joined to each other such that differences in thermal expansion rate between the optical waveguide substrate and the holding substrate become small in different axial directions on a joint surface.

(6) The optical waveguide substrate 1 that is used in the present invention is a crystal of lithium niobate (LN) or lithium tantalate (LT) and is a trigonal crystal. The thickness t of the optical waveguide substrate is 10 μm or lower from the viewpoint of the velocity matching between microwaves and light waves, the reduction of the drive voltage, or the like. The thickness t is set to 2 μm or lower in a case where the waveguides are formed in a ridge structure (ridge portions 10) as shown in FIG. 2 or 3 in order to strengthen light confinement and more preferably set to lower than 1 μm in order to decrease the bend radius of the waveguide.

(7) In a thin plate such as the optical waveguide substrate having a thickness t of 10 μm or lower, a toughness is impaired, and the plate becomes extremely brittle. Therefore, in the case of a ridge waveguide, stress concentrates in an edge portion, and, physically, a crack is more likely to be generated. According to the present invention, since the generation of internal stress attributed to thermal expansion is suppressed, it is possible to reduce cracks.

(8) As a method for forming the optical waveguides 3, it is possible to apply a method in which metal such as Ti is thermally diffused in the substrate to form portions having a higher refractive index than the substrate material as shown in FIG. 1, a method in which protrusions and recesses are formed on the surface of the substrate to configure ridge-type waveguides (rib waveguides) 10 as shown in FIG. 2 or 3, or the like. In addition, control electrodes such as modulation electrodes that apply an electric field to the optical waveguides (a signal electrode (S) 2 and ground electrodes (G) 20) or DC bias electrodes are formed by laminating gold on a base electrode layer such as Au/Ti formed on the substrate by a plating method or the like in a thickness of several to several tens of micrometers.

(9) As the holding substrate 4 that holds the optical waveguide substrate 1, a crystal having a lower dielectric constant than the optical waveguide substrate and having anisotropy in thermal expansion rate is used. Specifically, a trigonal crystal such as an α-quartz single crystal is preferably used. The α-quartz single crystal has a relative dielectric constant of 4.6, which is sufficiently low compared with even LN (relative dielectric constant: 29.5) or LT (relative dielectric constant: 44.5), which is a single crystal substrate having the electro-optic effect.

(10) In addition, the α-quartz single crystal is a trigonal crystal and is different from amorphous (the linear expansion coefficient is isotropic) quartz glass. The linear expansion coefficients of the α-quartz single crystal are 8 ppm/° C. in the Z-axis direction and 13 ppm/° C. in the X and Y-axis directions, and the α-quartz single crystal has anisotropy in linear expansion coefficient. Furthermore, these linear expansion coefficients have values close to the linear expansion coefficients of LN (4 ppm/° C. in the Z-axis direction and 15 ppm/° C. in the X and Y-axis directions) or the linear expansion coefficients of LT (5 ppm/° C. in the Z-axis direction and 14 ppm/° C. in the X and Y-axis directions).

(11) Therefore, when the optical waveguide substrate and the holding substrate are joined to each other such that the Z axis of the optical waveguide substrate and the Z axis of the α-quartz single crystal, which is the holding substrate (low-dielectric constant layer), become parallel to each other, it is possible to bring the linear expansion coefficient of the low-dielectric constant layer close to the linear expansion coefficient of the optical waveguide substrate. As a result, it is possible to effectively suppress a temperature drift attributed to thermal stress between the optical waveguide substrate and the low-dielectric constant layer.

(12) Furthermore, the amount of an impurity contained in the α-quartz single crystal is small, and it also becomes possible to suppress the occurrence of the DC drift phenomenon caused by a movable carrier. From this point as well, artificial crystal (low-temperature type α-quartz) capable of further reducing the amount of an impurity in the crystal is more preferable.

(13) In addition, regarding the joining between the optical waveguide substrate and the holding substrate, in the case of using the α-quartz single crystal, the linear expansion coefficients of the optical waveguide substrate and the holding substrate are extremely close to 5 ppm/° C. or lower, and the substrates do not break even after undergoing a heating step where the substrates are heated to near 600° C., and thus direct joining in which the substrates are covalently bonded to each other also becomes possible. Particularly, even in the case of performing annealing by a thermal treatment in order to suppress scattering on the side surface of the ridge-type waveguide or in the case of performing a baking treatment on a resist material, it becomes possible to suppress the breakage of the substrates.

(14) The optical waveguide substrate 1 and the holding substrate 4 may be directly joined to each other using a method such as the activation of the surfaces of both substrates as shown in FIG. 1 or 2 or may be joined to each other through an adhesive layer 5 as shown in FIG. 3.

(15) The use of an adhesive, a resin, water glass, glass frit, or the like as the adhesive layer 5 becomes a cause for the occurrence of the temperature drift phenomenon attributed to a difference in linear expansion coefficient between the adhesive layer and the optical waveguide substrate. In addition, due to the influence of a polar group, a movable carrier, or the like that is contained in the adhesive layer, the use of the above-described material also becomes a cause for the occurrence of the DC drift phenomenon, which is not preferable. These drifts are more likely to be caused particularly as the thickness of the adhesive layer increases.

(16) In the case of using the adhesive layer 5 for the joining of the substrates, it is preferable to form an oxide such as alumina, tantalum pentoxide, or niobium pentoxide or the like extremely thin (100 nm or lower) from the viewpoint of suppressing the occurrence of the temperature drift phenomenon or the DC drift phenomenon as much as possible.

(17) In the optical waveguide device, in order to realize a stable operating environment and suppress deterioration over time, the substrates (chips) that configure the optical waveguide device are stored in a chassis made of metal or the like. In the case of using stainless steel (linear expansion coefficient: 10 ppm/° C.) or a cobalt alloy such as KOVAR (registered trademark of Carpenter Technology Corporation, linear expansion coefficient: 5 ppm/° C.) for the chassis, the material has a linear expansion coefficient close to the linear expansion coefficient of the holding substrate, and it becomes possible to provide an optical waveguide device that is highly durable against a temperature change.

(18) Optical waveguide devices were produced using LN or LT for optical waveguide substrates and using α-quartz single crystals for holding substrates, and the influences of the drift phenomena were evaluated. The results are shown in Table 1. It should be noted that, in Table 1, “X-LN” for the optical waveguide substrates indicates X-cut LN substrates. In addition, the notation also applies to an LT substrate in the same manner. “CTE” indicates linear expansion coefficients, and “horizontal” and “perpendicular” indicate linear expansion coefficients in different axial directions on the joint surfaces of the substrates. “None” for adhesives means direct joining, and “Al.sub.2O.sub.3 10 nmt” means that the substrates are joined to each other by applying Al.sub.2O.sub.3 (alumina) in a thickness of 10 nm. “Acrylic” and “glass frit” are the materials of the adhesives, and the numerical values indicate their thicknesses. “X-α-quartz” for the holding substrates are an X-cut α-quartz single crystal.

(19) Modulators having a Mach-Zehnder type (MZ structure) optical waveguide were produced, and the drifts were evaluated. In the evaluation of the temperature drift, the temperature was changed from −5° C. to 85° C. in a state where an AC voltage was applied to the modulator, and the amount of a change in the peak intensity of light output from the modulator was measured as a voltage value.

(20) On the other hand, in the evaluation of the DC drift, the measurement temperature was set to 85° C., the applied voltage was set to be constant (3.5 V), and the amount of a change in the peak intensity of light output from the modulator in 24 hours was measured as a voltage value.

(21) In Table 1, these amounts of voltage changes were regarded as drift amounts, cases where the drift amount was 3 V or lower were evaluated as “O”, and cases where the drift amount was larger than 3 V were evaluated as “X”.

(22) TABLE-US-00001 TABLE 1 Optical waveguide substrate Adhesive Holding substrate Drift amount Material CTE (ppm/° C.) Material Material CTE (ppm/° C.) Temperature DC Example 1 X-LN Horizontal: 15 None X-α- Horizontal: 13 ◯ ◯ Perpendicular: 4 quartz Perpendicular: 8 Example 2 X-LT Horizontal: 14 None X-α- Horizontal: 13 ◯ ◯ Perpendicular: 5 quartz Perpendicular: 8 Example 3 X-LN Horizontal: 15 Al2O3 X-α- Horizontal: 13 ◯ ◯ Perpendicular: 4 10 nmt quartz Perpendicular: 8 Comparative X-LN Horizontal: 15 None Quartz Horizontal: 0.5 X ◯ Example 1 Perpendicular: 4 glass Perpendicular: 0.5 Comparative X-LN Horizontal: 15 Acrylic X-α- Horizontal: 13 X X Example 2 Perpendicular: 4 10 μmt quartz Perpendicular: 8 Comparative X-LN Horizontal: 15 Glass frit X-α- Horizontal: 13 X X Example 3 Perpendicular: 4 10 μmt quartz Perpendicular: 8 Comparative X-LN Horizontal: 15 None Z-α- Horizontal: 13 X ◯ Example 4 Perpendicular: 4 quartz Perpendicular: 13 Evaluation of drift amount: ◯ indicates ‘≤3 V’, X indicates ‘>3 V’.

(23) From the results in Table 1, it was confirmed that, in a case where the α-quartz single crystal is used for the holding substrate and the differences in linear expansion coefficient are suppressed to 5 ppm/° C. or lower in different axial directions on the joint surface with the optical waveguide substrate, it is possible to effectively suppress not only the temperature drift phenomenon but also the DC drift phenomenon.

(24) As described above, according to the optical waveguide device according to the present invention, it becomes possible to provide an optical waveguide device capable of suppressing the temperature drift phenomenon and the DC drift phenomenon at the same time.