INTRA-SYMBOL VOLTAGE MODULATION IN A WIRELESS COMMUNICATION CIRCUIT
20230133842 · 2023-05-04
Inventors
Cpc classification
H04L5/0007
ELECTRICITY
H04L25/03847
ELECTRICITY
International classification
Abstract
Intra-symbol voltage modulation in a wireless communication circuit is disclosed. In a wireless communication circuit, a power amplifier circuit is configured to amplify a radio frequency (RF) signal based on a modulated voltage that tracks a time-variant input power of the RF signal. Herein, intra-symbol voltage modulation means that the modulated voltage can be adapted within a voltage modulation interval(s), such as an orthogonal frequency division multiplexing (OFDM) symbol duration. In embodiments disclosed herein, the voltage modulation interval(s) is divided into multiple voltage modulation subintervals and a respective voltage target is determined for each of the voltage modulation subintervals. Accordingly, the modulated voltage can be adapted in each of the voltage modulation subintervals according to the respective voltage target. By performing intra-symbol voltage modulation during the voltage modulation interval(s), the power amplifier circuit can operate with higher efficiency and prevent distortion (e.g., amplitude clipping) when amplifying the RF signal.
Claims
1. A transceiver circuit comprising: a digital baseband circuit configured to generate a digital input vector having a time-variant amplitude; and a target voltage processing circuit configured to: divide each of a plurality of voltage modulation intervals into a plurality of voltage modulation subintervals; determine a respective one of a plurality of modulated target voltage indicators for each of the plurality of voltage modulation subintervals based on the time-variant amplitude of the digital input vector; and generate a target voltage signal comprising the plurality of modulated target voltage indicators.
2. The transceiver circuit of claim 1, wherein the target voltage processing circuit is further configured to equally divide each of the plurality of voltage modulation intervals into the plurality of voltage modulation subintervals.
3. The transceiver circuit of claim 1, wherein the target voltage processing circuit is further configured to unequally divide each of the plurality of voltage modulation intervals into the plurality of voltage modulation subintervals.
4. The transceiver circuit of claim 1, wherein the target voltage processing circuit is further configured to: determine a first one of the plurality of modulated target voltage indicators to include an initial target voltage in the respective one of the plurality of voltage modulation intervals; and determine each of the plurality of modulated target voltage indicators succeeding the first one of the plurality of modulated target voltage indicators to include a target voltage change relative to an immediately preceding one of the plurality of modulated target voltage indicators.
5. The transceiver circuit of claim 1, wherein the target voltage processing circuit is further configured to pulse-width modulate each of the plurality of modulated target voltage indicators to have a respective one of a plurality of pulse widths corresponding to a respective one of a plurality of digital target voltage values.
6. The transceiver circuit of claim 5, wherein a duration of a largest one of the plurality of pulse widths is substantially smaller than any of the plurality of voltage modulation subintervals.
7. The transceiver circuit of claim 5, wherein the plurality of pulse widths is inversely related to the plurality of digital target voltage values.
8. The transceiver circuit of claim 1, further comprising a signal processing circuit configured to convert the digital input vector into a radio frequency (RF) signal and modulate the RF signal onto a plurality of symbols each corresponding to a respective one of the plurality of voltage modulation intervals.
9. The transceiver circuit of claim 1, wherein the target voltage processing circuit is coupled to a single-wire communication bus and a multi-wire communication bus and configured to communicate the target voltage signal over the single-wire communication bus.
10. A wireless communication circuit comprising: a transceiver circuit comprising: a digital baseband circuit configured to generate a digital input vector having a time-variant amplitude; and a target voltage processing circuit configured to: divide each of a plurality of voltage modulation intervals into a plurality of voltage modulation subintervals; determine a respective one of a plurality of modulated target voltage indicators for each of the plurality of voltage modulation subintervals based on the time-variant amplitude of the digital input vector; and generate a target voltage signal comprising the plurality of modulated target voltage indicators.
11. The wireless communication circuit of claim 10, further comprising a power management integrated circuit (PMIC) comprising: a target voltage circuit comprising: a target voltage demodulator circuit coupled to the transceiver circuit via a single-wire communication bus and a multi-wire communication bus and configured to: receive the target voltage signal via the single-wire communication bus; and demodulate each of the plurality of modulated target voltage indicators to generate a respective one of a plurality of digital target voltage values; and a target voltage lookup table, LUT, circuit configured to convert each of the plurality of digital target voltage values into a respective one of a plurality of voltage targets; and a voltage generation circuit configured to generate a plurality of modulated voltages in the plurality of voltage modulation subintervals based on the plurality of voltage targets, respectively.
12. The wireless communication circuit of claim 11, further comprising a power amplifier circuit configured to amplify the RF signal in the plurality of voltage modulation subintervals based on the plurality of modulated voltages, respectively.
13. A method for generating a target voltage for intra-symbol voltage modulation comprising: generating a digital input vector having a time-variant amplitude; dividing each of a plurality of voltage modulation intervals into a plurality of voltage modulation subintervals; determining a respective one of a plurality of modulated target voltage indicators for each of the plurality of voltage modulation subintervals based on the time-variant amplitude of the digital input vector; and generating a target voltage signal comprising the plurality of modulated target voltage indicators.
14. The method of claim 13, further comprising equally dividing each of the plurality of voltage modulation intervals into the plurality of voltage modulation subintervals.
15. The method of claim 13, further comprising unequally dividing each of the plurality of voltage modulation intervals into the plurality of voltage modulation subintervals.
16. The method of claim 13, further comprising: determining a first one of the plurality of modulated target voltage indicators to include an initial target voltage in the respective one of the plurality of voltage modulation intervals; and determining each of the plurality of modulated target voltage indicators succeeding the first one of the plurality of modulated target voltage indicators to include a target voltage change relative to an immediately preceding one of the plurality of modulated target voltage indicators.
17. The method of claim 13, further comprising pulse-width modulating each of the plurality of modulated target voltage indicators to have a respective one of a plurality of pulse widths corresponding to a respective one of a plurality of digital target voltage values.
18. The method of claim 17, wherein the plurality of pulse widths is inversely related to the plurality of digital target voltage values.
19. The method of claim 13, further comprising: demodulating each of the plurality of modulated target voltage indicators to generate a respective one of a plurality of digital target voltage values; converting each of the plurality of digital target voltage values into a respective one of a plurality of voltage targets; and generating a plurality of modulated voltages in the plurality of voltage modulation subintervals based on the plurality of voltage targets, respectively.
20. The method of claim 19, further comprising amplifying the RF signal in the plurality of voltage modulation subintervals based on the plurality of modulated voltages, respectively.
Description
BRIEF DESCRIPTION OF THE DRAWING FIGURES
[0013] The accompanying drawing figures incorporated in and forming a part of this specification illustrate several aspects of the disclosure, and together with the description serve to explain the principles of the disclosure.
[0014]
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[0017]
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[0020]
[0021]
DETAILED DESCRIPTION
[0022] The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
[0023] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
[0024] It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being “over” or extending “over” another element, it can be directly over or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over” or extending “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
[0025] Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.
[0026] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including” when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
[0027] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
[0028] Embodiments of the disclosure relate to intra-symbol voltage modulation in a wireless communication circuit. In a wireless communication circuit, a power amplifier circuit is configured to amplify a radio frequency (RF) signal based on a modulated voltage that tracks a time-variant input power of the RF signal. Herein, intra-symbol voltage modulation means that the modulated voltage can be adapted within a voltage modulation interval(s). In a non-limiting example, the voltage modulation interval(s) is equivalent to an orthogonal frequency division multiplexing (OFDM) symbol duration. In embodiments disclosed herein, the voltage modulation interval(s) is divided into multiple voltage modulation subintervals and a respective voltage target is determined for each of the voltage modulation subintervals. Accordingly, the modulated voltage can be adapted in each of the voltage modulation subintervals according to the respective voltage target. By performing intra-symbol voltage modulation during the voltage modulation interval(s), the modulated voltage can be generated to better track the time-variant input power of the RF signal. As a result, the power amplifier circuit can operate with higher efficiency and prevent distortion (e.g., amplitude clipping) when amplifying the RF signal.
[0029] Before discussing intra-symbol voltage modulation according to the present disclosure, starting at
[0030]
[0031] As previously shown in Table 1, each of the symbols 14(1)-14(M) has the symbol duration T.sub.SYM that depends on the subcarrier spacing (SCS). Once the SCS is chosen, the symbol duration T.sub.SYM and the CP of each of the symbols 10(1)-10(M) are set accordingly. In the context of the present disclosure, each of the symbols 10(1)-10(M) is referred to as a voltage modulation interval.
[0032] In a conventional wireless communication circuit, a radio frequency (RF) signal can be modulated based on a certain modulation and coding scheme (MCS) to carry various types of information in the symbols 10(1)-10(M). Accordingly, a power management circuit generates a modulated voltage for a power amplifier circuit to amplify the RF signal in each of the symbols 10(1)-10(M). Since the modulated voltage is generated on a per-symbol basis, the modulated voltage in each of the symbols 10(1)-10(M) is typically generated according to a peak power of the RF signal. Although such an approach can prevent amplitude clipping to the RF signal at the peak power, the power amplifier may be forced to operate with lower efficiency when an instantaneous power of the RF signal falls below the peak power. As such, it is desirable to adapt the modulated voltage to within each of the symbols 10(1)-10(M) to help improve operating efficiency of the power amplifier.
[0033] In this regard,
[0034] The wireless communication circuit 12 further includes a power amplifier circuit 18. The power amplifier circuit 18 is configured to amplify an RF signal 20 from a time-variant input power P.sub.IN(t) to a time-variant output power P.sub.OUT(t) based on a modulated voltage V.sub.CC, which can be an envelope tracking (ET) modulated voltage or an average power tracking (APT) modulated voltage. Herein, the transceiver circuit 16 is configured to generate the RF signal 20 having the time-variant input power P.sub.IN(t) and the PMIC 14 is configured to generate the modulated voltage V.sub.CC.
[0035] As described in detail below, the transceiver circuit 16 is configured to determine multiple modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN in each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1. Instead of generating the single modulated voltage V.sub.CC for an entire duration T.sub.SYM of each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1, the PMIC 14 is configured to generate multiple modulated voltages V.sub.CC1-V.sub.CCN in each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1 based on the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN, respectively. By replacing the single modulated voltage V.sub.CC with the multiple modulated voltages V.sub.CC1-V.sub.CCN in each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1, the PMIC 14 can adapt the modulated voltage V.sub.CC more frequently to closely track the time-variant input power P.sub.IN(t) of the RF signal 20. As a result, the power amplifier circuit 18 can achieve a higher efficiency when amplifying the RF signal 20, in addition to preventing distortion (e.g., amplitude clipping) in the RF signal 20.
[0036]
[0037] In an embodiment, the transceiver circuit 16 includes a digital baseband circuit 22, a signal processing circuit 24, and a target voltage processing circuit 26. The digital baseband circuit 22 is configured to generate a digital input vector {right arrow over (b.sub.MOD)} having a time-variant amplitude √{square root over (I.sup.2+Q.sup.2)}. Herein, I and Q represent in-phase and quadrature amplitudes of the digital input vector {right arrow over (b.sub.MOD)}, respectively.
[0038] The signal processing circuit 24 may include a digital-to-analog converter(s) (ADC), a frequency converter(s), and a frequency filter(s), as an example. The signal processing circuit 24 is configured to convert the digital input vector {right arrow over (b.sub.MOD)} into the RF signal 20 and modulate the RF signal 20 onto the symbols 14(1)-14(N) in
[0039] The target voltage processing circuit 26 is coupled to the PMIC 14 via a single-wire communication bus 28 and a multi-wire communication bus 30. In a non-limiting example, the multi-wire communication bus 30 can be an RF front-end (RFFE) bus. In an embodiment, the target voltage processing circuit 26 is configured to divide each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1 into multiple voltage modulate subintervals T.sub.1-T.sub.N. Herein, the target voltage processing circuit 26 may divide each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1, either equally or unequally, into the voltage modulate subintervals T.sub.1-T.sub.N. The target voltage processing circuit 26 is also configured to determine the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN in each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1 based on the time-variant amplitude √{square root over (I.sup.2+Q.sup.2)} of the digital input vector {right arrow over (b.sub.MOD)}. The target voltage processing circuit 26 is further configured to communicate the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN in a target voltage signal 32 at a beginning of each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1.
[0040] In one embodiment, the target voltage processing circuit 26 can generate a respective one of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN as a target voltage change relative to an immediately preceding one of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN. For example, the modulated target voltage indicator TGT.sub.ID1 in the voltage modulation interval S.sub.X indicates a target voltage change relative to the modulated target voltage indicator TGT.sub.IDN in the voltage modulation interval S.sub.X−1, and the modulated target voltage indicator TGT.sub.ID2 in the voltage modulation interval S.sub.X indicates a target voltage change relative to the modulated target voltage indicator TGT.sub.ID1 in the voltage modulation interval S.sub.X.
[0041] In another embodiment, the target voltage processing circuit 26 can generate a first modulated target voltage indicator TGT.sub.ID1 in each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1 to include an initial target voltage and generate each of the modulated target voltage indicators TGT.sub.ID2-TGT.sub.IDN succeeding the first modulated target voltage indicators TGT.sub.ID1 to include a target voltage change relative to an immediately preceding one of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN. For example, the modulated target voltage indicator TGT.sub.ID1 in the voltage modulation interval S.sub.X indicates an initial target voltage of the voltage modulation interval S.sub.X, and the modulated target voltage indicator TGT.sub.ID2 in the voltage modulation interval S.sub.X indicates a target voltage change relative to the first modulated target voltage indicator TGT.sub.ID1 in the voltage modulation interval S.sub.X. As such, the target voltage processing circuit 26 can reset the initial target voltage at the beginning of each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1.
[0042] According to an embodiment of the present disclosure, the target voltage processing circuit 26 is configured to pulse-width modulate each of the modulated target voltage indicators TGT.sub.ID2-TGT.sub.IDN. In this regard,
[0043] Herein, each of the digital target voltage values TGT.sub.V1-TGT.sub.VK in any of the modulated target voltage indicators TGT.sub.ID2-TGT.sub.IDN can be represented by a respective one of multiple pulse-width modulated (PWM) pulses 34(1)-34(K). The PWM pulses 34(1)-34(K) each have a respective rising edge 35R and a respective falling edge 35F that define a respective one of the pulse widths W.sub.1-W.sub.K. Since the digital target voltage values TGT.sub.V1-TGT.sub.VK are different from one another, the pulse widths W.sub.1-W.sub.K need to be different from one another as well. For example, the digital target voltage value TGT.sub.V1 is represented by the pulse width W.sub.1, the digital target voltage value TGT.sub.V2 is represented by the pulse width W.sub.2, and the digital target voltage value TGT.sub.VK is represented by the pulse width W.sub.K.
[0044] In an embodiment, the pulse widths W.sub.1-W.sub.K are inversely related to the digital target voltage values TGT.sub.V1-TGT.sub.VK. For example, if TGT.sub.V1>TGT.sub.V2> . . . >TGT.sub.VK, then W.sub.1<W.sub.2< . . . <W.sub.K. Notably, by using the shortest pulse width W.sub.1 to represent the highest digital target voltage values TGT.sub.V1 and, conversely, using the longest pulse width W.sub.K to represent the lowest digital target voltage values TGT.sub.VK, it will take a shorter time to demodulate the highest digital target voltage values TGT.sub.V1 in any voltage modulation subinterval T.sub.X (T.sub.X∈T.sub.1-T.sub.N) among the voltage modulate subintervals T.sub.1-T.sub.N, thus leaving sufficient time in the voltage modulation subinterval T.sub.X to ramp up a respective one of the modulated voltages V.sub.CC1-V.sub.CCN to the highest digital target voltage values TGT.sub.V1.
[0045] Further, to ensure that there is also sufficient time in the voltage modulate subinterval T.sub.X to generate a respective one of the modulated voltages V.sub.CC1-V.sub.CCN according to the lowest digital target voltage values TGT.sub.VK, the pulse width W.sub.K (a.k.a. the largest pulse width among the pulse widths W.sub.1-W.sub.K) is so determined to be substantially smaller than the voltage modulation subinterval T.sub.X. In a non-limiting example, the largest pulse width W.sub.K is said to be substantially smaller than the voltage modulation subinterval T.sub.X when the largest pulse width W.sub.K is less than ten percent (<10%) of the voltage modulation subinterval T.sub.X (W.sub.K<T.sub.X/10). According to an embodiment of the present disclosure, the largest pulse width W.sub.K is less than two nanoseconds (W.sub.K<2 ns).
[0046] With reference back to
[0047] As described in detail below, the target voltage circuit 36 is configured to demodulate each of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN to thereby generate a respective one of multiple target voltages V.sub.TGT1-V.sub.TGTN. The voltage generation circuit 38, in turn, can generate the modulated voltages V.sub.CC1-V.sub.CCN in each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1 based on the target voltages V.sub.TGT1-V.sub.TGTN, respectively.
[0048] According to an embodiment of the present disclosure, the target voltage circuit 36 includes a target voltage demodulator circuit 40 and a target voltage lookup table (LUT) circuit 42. The target voltage demodulator circuit 40 is configured to receive the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN during the voltage modulate subintervals T.sub.1-T.sub.N, respectively, via the single-wire communication bus 28. The target voltage demodulator circuit 40 is also configured to demodulate each of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN to generate a respective one of multiple digital target voltage values TGT.sub.1-TGT.sub.N.
[0049] In an embodiment, the target voltage LUT circuit 42 may include a LUT 44 that correlates each of the digital target voltage values TGT.sub.1-TGT.sub.N with a respective one of the target voltages V.sub.TGT1-V.sub.TGTN. In a non-limiting example, the LUT 44 can be programmed by the transceiver circuit 16 via the multi-wire communication bus 30, either statically (e.g., during factory and/or field calibration) or dynamically (e.g., based on modulation bandwidth of the RF signal 20). Accordingly, the target voltage LUT circuit 42 can use the LUT 44 to convert each of the digital target voltage values TGT.sub.1-TGT.sub.N into a respective one of the target voltages V.sub.TGT1-V.sub.TGTN.
[0050] The target voltage demodulator circuit 40 can be configured to detect a respective one of the pulse widths W.sub.1-W.sub.K of a respective one of the PWM pulses 34(1)-34(K) in each of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN to thereby determine a respective one of the digital target voltage values TGT.sub.V1-TGT.sub.VK. In this regard,
[0051] In an embodiment, the target voltage demodulator circuit 40 includes a clock generator 46. The clock generator 46 is configured to generate a clock signal DCLK based on the target voltage signal 32. More specifically, the clock generator 46 generates the clock signal DCLK to have a higher frequency f.sub.DCLK than a frequency f.sub.TGT of the target voltage signal 32, as expressed in equation (Eq. 1) below.
f.sub.DCLK=M*f.sub.TGT (Eq. 1)
[0052] In the equation (Eq. 1), f.sub.DCLK represents the frequency of the clock signal DCLK, f.sub.TGT represents the frequency of the target voltage signal 32, and M represents a scaling factor that is greater than one (M>1). Understandably, the scaling factor M depends on how many different values of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN are conveyed in the target voltage signal 32. In other words, the more the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN are conveyed in the target voltage signal 32, the higher the scaling factor M needs to be. According to an embodiment of the present disclosure, the scaling factor M is set to ten (M=10).
[0053] The target voltage demodulator circuit 40 also includes multiple first digital flip-flops 48 and multiple second digital flip-flops 50. The first digital flip-flops 48 are each coupled to a first delay line 52 and the second digital flip-flops 50 are each coupled to a second delay line 54. In an embodiment, the transceiver circuit 16 may calibrate the first delay line 52 and/or the second delay line 54 via a calibration signal 56, which may be provided to the target voltage demodulator circuit 40 via the multi-wire communication bus 30.
[0054] Herein, each of the first digital flip-flops 48 is configured to receive a first clock signal 58 and a first data signal 60, and each of the second digital flip-flops 50 is configured to receive a second clock signal 62 and a second data signal 64. According to an embodiment of the present disclosure, the first clock signal 58 is an inversion of the target voltage signal 32, the first data signal 60 and the second clock signal 62 are the clock signal DCLK, and the second data signal 64 is the target voltage signal 32.
[0055]
[0056] In this regard, some or all of the first digital flip-flops 48 may be clocked by the falling edge 35F of any of the PWM pulses 34(1)-34(K) to generate a first thermos-encoded digital word D.sub.1 that represents a first temporal difference τ.sub.1 between the rising edge 66 of the clock signal DCLK and the falling edge 35F of any of the PWM pulses 34(1)-34(K). In contrast, some or all of the second digital flip-flops 50 may be clocked by the rising edge 66 of the clock signal DCLK to generate a second thermos-encoded digital word D.sub.2 that represents a second temporal difference 12 between the rising edge 35R of any of the PWM pulses 34(1)-34(K) and the rising edge 66 of the clock signal DCLK.
[0057] With reference back to
[0058] According to an embodiment of the present disclosure, the first digital encoder 68 and/or the second digital encoder 70 may be configured according to whether the first thermos-encoded digital word D.sub.1 and/or the second thermos-encoded digital word D.sub.2 are saturated thermos-encoded digital words. Herein, the saturated thermos-encoded digital word refers to a thermos-encoded digital word consisting of only “1 s” or “0s.”
[0059] The first digital encoder 68 may send a first saturation indication signal 74 to the clock generator 46 in response to the first binary word D.sub.1 being a saturated thermos-encoded digital word. Likewise, the second digital encoder 70 may send a second saturation indication signal 76 to the clock generator 46 in response to the second binary word D.sub.2 being the saturated thermos-encoded digital word. The clock generator 46, in turn, may advance or delay the clock signal DCLK in response to receiving the first saturation indication signal 74 and/or the second saturation indication signal 76.
[0060] The wireless communication circuit 12 of
[0061] Herein, the user element 100 can be any type of user elements, such as mobile terminals, smart watches, tablets, computers, navigation devices, access points, and like wireless communication devices that support wireless communications, such as cellular, wireless local area network (WLAN), Bluetooth, and near field communications. The user element 100 will generally include a control system 102, a baseband processor 104, transmit circuitry 106, receive circuitry 108, antenna switching circuitry 110, multiple antennas 112, and user interface circuitry 114. In a non-limiting example, the control system 102 can be a field-programmable gate array (FPGA), as an example. In this regard, the control system 102 can include at least a microprocessor(s), an embedded memory circuit(s), and a communication bus interface(s). The receive circuitry 108 receives radio frequency signals via the antennas 112 and through the antenna switching circuitry 110 from one or more base stations. A low noise amplifier and a filter cooperate to amplify and remove broadband interference from the received signal for processing. Downconversion and digitization circuitry (not shown) will then downconvert the filtered, received signal to an intermediate or baseband frequency signal, which is then digitized into one or more digital streams using analog-to-digital converter(s) (ADC).
[0062] The baseband processor 104 processes the digitized received signal to extract the information or data bits conveyed in the received signal. This processing typically comprises demodulation, decoding, and error correction operations, as will be discussed in greater detail below. The baseband processor 104 is generally implemented in one or more digital signal processors (DSPs) and application specific integrated circuits (ASICs).
[0063] For transmission, the baseband processor 104 receives digitized data, which may represent voice, data, or control information, from the control system 102, which it encodes for transmission. The encoded data is output to the transmit circuitry 106, where a digital-to-analog converter(s) (DAC) converts the digitally encoded data into an analog signal and a modulator modulates the analog signal onto a carrier signal that is at a desired transmit frequency or frequencies. A power amplifier will amplify the modulated carrier signal to a level appropriate for transmission, and deliver the modulated carrier signal to the antennas 112 through the antenna switching circuitry 110. The multiple antennas 112 and the replicated transmit and receive circuitries 106, 108 may provide spatial diversity. Modulation and processing details will be understood by those skilled in the art.
[0064] The wireless communication circuit 12 of
[0065] Herein, the digital baseband circuit 22 generates the digital input vector {right arrow over (b.sub.MOD )}having a time-variant amplitude √{square root over (I.sup.2+Q.sup.2)} (step 202). The target voltage processing circuit 26 divides each of the voltage modulation intervals S.sub.X−1, S.sub.X, S.sub.X+1 into the voltage modulation subintervals T1-TN (step 204). Next, the target voltage processing circuit 26 determines a respective one of the modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN for each voltage modulation subinterval T.sub.1-T.sub.N based on the time-variant amplitude √{square root over (I.sup.2+Q.sup.2)} of the digital input vector {right arrow over (b.sub.MOD)} (step 206). Accordingly, the target voltage processing circuit 26 generates the target voltage signal 32 including the plurality of modulated target voltage indicators TGT.sub.ID1-TGT.sub.IDN (step 208).
[0066] Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.