Method for local modification of etching resistance in a silicon layer, use of this method in the productions of passivating contact solar cells and thus-created solar cell

Abstract

Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the production of solar cells.

Claims

1. A method for local structuring of a layer to produce locally structured polycrystalline layers (301,1301,1302), characterized in that the method comprises a step of local modification of the etching resistance within said silicon layer (301,1301,1302) and a subsequent step of removing unmodified regions of said silicon layer (301,1301,1302) by etching.

2. The method according to claim 1, wherein the silicon layer (301,1301,1302) as deposited is amorphous, partly crystalline or completely crystalline.

3. The method according to claim 1, wherein the local modification of the etching resistance is brought about at least partly by inducing a local increase in the crystallinity of the silicon layer (301,1301,1302) in the modified regions to produce locally structured polycrystalline layers.

4. The method according to claim 1, wherein the local modification of the etching resistance of the silicon layer (301,1301,1302) is brought about at least partly by application of a laser to those regions of the silicon layer (301,1301,1302) in which the etching resistance is increased.

5. The method according to claim 4, wherein the laser that is used is a short pulse laser, preferably a visible or ultraviolet light short pulse laser or a UV excimer laser, and wherein the pulse energy is being selected such that a local increase in the crystallinity of the polycrystalline silicon layer (301,1301,1302) and diffusion or activation of dopants, in case dopants are present, occurs, but an underlying layer remains unaffected.

6. The method according to claim 1, wherein the local modification of the etching resistance of the silicon layer (301,1301,1302) is brought about at least partly by local doping, preferably by implantation of boron.

7. The method according to claim 6, wherein the doping source is a doping source layer (401,1401,1402) formed by a highly doped amorphous silicon layer or a dopant-containing silicate glass layer, preferably boron silicate glass.

8. The method according to claim 7, wherein the silicon layer (301,1301,1302) and the doping source layer (401,1401,1402) are successively created in the same process chamber.

9. The method according to claim 6, wherein local doping is obtained by ion implantation using a shadow mask.

10. The method according to claim 1, wherein the subsequent step of removing unmodified regions of said silicon layer (301,1301,1302) by etching takes place in alkaline solution, preferably in a concentration range between 1 and 40%.

11. A method for the production of silicon solar cells, said method comprising at least one step of local structuring of a silicon layer (301,1301,1302) according to claim 1.

12. The method according to claim 11, wherein as a starting substrate a silicon wafer (101, 1101), the saw damage of which was removed and which was then cleaned, is provided.

13. The method according to claim 12, wherein a stack of layers is first deposited onto said silicon wafer (101,1101) which stack comprises an oxide layer (201,1201,1202), an undoped silicon layer (301,1301,1302) and a dopant layer (401,1401,1402) on top of the undoped silicon layer (301,1301,1302).

14. The method according to claim 13, wherein a laser is applied to produce a highly doped (p++) region (501,1501,1502) in the undoped silicon layer (301,1301,1302) and wherein at parts of the locations where the laser has been applied a metal contact for the extraction of positive charge carriers is created in a later process step.

15. The method according to claim 11, wherein the solar cell is a two side contacted solar cell and wherein the method according to one of claims 1 to 9 is used to produce localized passivating layers, for passivating the contacts on the front side of the solar cell.

16. The method according to claim 15, wherein the regions between places, at which local modification of the etching resistance within said silicon layer (301,1301,1302) has been performed, are homogenously doped with the same doping type as the passivating layer.

17. The method according to claim 10, wherein the solar cell is an IBC solar cell and wherein the method uses a method according to one of claims 1 to 9 to either produce localized passivating layers or so-called passivating contacts in an interdigitated structure on the rear side.

Description

[0031] Next, the invention is explained in more detail assisted by figures, which represent specific embodiments of the invention. Note that none of the dimensions in the figures is to scale.

[0032] The figures show:

[0033] FIG. 1: The process flow of a process sequence showing essential steps of the preparation of the front side of a TOPCon solar cell with selective passivating contact structures on the front side during the production of the TOPCon solar cell,

[0034] FIG. 2: a variety of alternatives for the relative widths of laser treated region and metallization finger obtained after the last processing step in FIG. 1,

[0035] FIG. 3: the process flow of a process sequence showing essential steps of the formation of a passivating contact IBC solar cell with a focus on the processing of the rear side, and

[0036] FIG. 4: a variety of alternatives for the structure of the rear side of the solar cell obtained after the last processing step in FIG. 3,

[0037] In the present disclosure relating to specific embodiments of the invention, numerous specific details are provided, such as examples of materials, process parameters, process steps, and structures, to provide a thorough understanding of the invention. However, persons skilled in the art of solar cell manufacturing will be aware of alternatives that allow realization of the invention. In some instances, well-known details are not shown or described in detail to avoid obscuring the focus on invention.

[0038] The presented invention utilizes material properties and changes in material properties that can be characterized using well known methods. The invention relates to a combination of process steps that are used to change the material properties in a way that allows to produce highly efficient solar cells in a cost effective manner.

[0039] In all of the embodiments of the invention, a silicon layer is structured locally without the use of an etching mask. The resulting layer can then be utilized to serve as passivating layer for metal-silicon contacts. In contrast to common laser structuring in solar cell manufacturing technology, the laser is not used to ablate material, but quite the opposite. Where the laser is applied the material properties of the layers are changed in such a fashion that the laser treated area can serve as an etching barrier.

[0040] One way for obtaining this etching resistance of the layer that is disclosed in detail is locally doping the layer with boron obtaining a p++(6e19-4e20 cm-3) doped region that etches slower than a non-doped or lower doped or n+ doped region (see. FIG. 1). The starting substrate is a silicon wafer, the saw damage of which was removed by conventional methods and which was then cleaned. In one version of the invention, a stack of layers is first deposited by a conventional method (e.g. by oxidation, PECVD, LPCVD, CVD, sputtering or a mix of the named methods), which consists of a thin oxide layer, an intrinsic Si layer and a dopant layer, preferably a borosilicate glass layer (BSG). With the aid of a laser, e.g. an eximer laser or a green or ultraviolet nanosecond-, picosecond- or femtosecond-laser, the intrinsic layer produces a highly doped (p++) region wherever the metal contact for the p-polarity is applied at the end of the process.

[0041] Using a partly crystalline layer, such as would be resulting from LPCVD depositions, the p++ doped layer was found to etch by a factor of about 100 to 500 slower as the non-doped region and the silicon underneath. This allows for alkaline texturing of the silicon as deep as several micrometers, while only some tens of nanometers of the doped layers are removed. If amorphous layers are used, local n++ doping can also be used. Different etch rates then do not result from the difference of the dopant concentration and different crystallinity, but only from the different crystallinity.

[0042] Following this invention, also local implantation of boron, e.g. by a shadow mask can be considered. In this case no dopant source layer and laser is necessary to obtain the doped region that can then serve as etching barrier.

[0043] More preferably, the local doping and simultaneous crystallization is done by a laser from a source layer of doped silicate glass layer, which has been deposited in-situ (in the same machine as the silicon layer) or ex-situ in a different machine (such as by APCVD or in a tube furnace or PECVD), or from a further, highly doped amorphous Si layer. The laser step is preferably performed with an excimer laser (similar to the one used in the production of TFT displays) or by scanning with a short pulse laser (e.g. a green nanosecond laser). Nevertheless, other methods are also conceivable, by which the layer is heated locally so strongly that dopants are incorporated and their crystallinity is increased.

[0044] Subsequent alkaline etching (e.g. using preferably hot KOH, NaOH, TMAH or similar of various concentrations) selectively removes the non-actively doped (and crystallized) silicon layer.

[0045] The alkaline etch step can be an alkaline texturing step using conventional methods (in dilute hot alkali using common texture additives). Alternatively, the surface can be etched smooth by the usual method in hot, more concentrated alkaline solution to form a step.

[0046] FIG. 1 shows a process flow for producing a TOPCon cell with selective passivating contact structures on the front side of the solar cell. The different stages of the process are marked by bracketed numbers, which are also used in the following description of the process flow.

[0047] This process sequence only describes the preparation of the front side of the solar cell. Rear side production processes are omitted for clarity but can be easily added based on the knowledge of a person skilled in the art. Also not displayed are process steps such as single side polishing and the deposition of a second poly layer on the rear side of the cell, or doping (and crystallization) of the same intrinsic layer with an opposite doping type on the rear side of the solar cell, which may be useful in certain embodiments of the invention. Further, the drawing is not to scale. Thickness of layers is typically in the range of tens of to hundreds of nanometers while width of doped region and metal finger is typically in the range of few micrometers to about hundred micrometers.

[0048] The solar cell possesses a light facing side (also referred to as front side) and an opposing side (also referred to as rear side). [0049] (1) Onto a preprocessed silicon wafer 101 of either n- or p-type that has been saw damage etched and cleaned using conventional etching and cleaning techniques, a thin oxide layer 201 is grown or deposited (e.g. by heating in oxygen containing atmosphere or by immersing into oxidants containing solutions). An intrinsic silicon layer 301 (which represents the layer to be locally modified) and a doping source layer 401 are deposited. [0050] (2) A laser is used to dope and crystallize local areas of 301. [0051] (3) By the laser treatment the highly doped area 501 with increased crystallinity is formed in the regions that are irradiated by the laser. [0052] (4) After removal of the doping source layer 401 in a suitable etchant, an alkaline etching step (in this case a texturing step producing random pyramids) forms an alkaline etched surface 601. [0053] (5) This surface is subsequently doped creating a doped region 701 of the same polarity as 501 but with lower dopant concentration using a conventional doping process such as tube furnace diffusion. [0054] (6) Onto 501 and 601 an antireflective coating 801 (e.g. SiNx) is formed by conventional methods such as PECVD. [0055] (7) Last, a metallization finger 901 is applied using a conventional solar cell metallization process, such as screen printing of metal paste or plating.

[0056] As shown in FIG. 2, the width of the laser treated region and or the width of the metallization finger may vary to achieve minimum parasitic absorption and best alignment with the metallization process. Ideally, the two widths match perfectly as in configuration (7.1) of FIG. 2. Yet, to ease the need for alignment also slightly wider laser treated areas, as in configuration (7.2) of FIG. 2 or wider metallization fingers 901, 902, 903 as in configuration (7.3) of FIG. 2 are conceivable. Further also for partly misaligned metal fingers, in which the metal is only partly on top of layer 501, would work.

[0057] FIG. 3 shows a second embodiment of the invention, a solar cell process sequence for a passivating contact IBC solar cell being disclosed. As in the embodiment of FIG. 1, not all the process steps that are required to process the functional solar cell are shown for reasons of simplicity. A person skilled in the art of solar cell production will easily notice that for example upon alkaline texturing for the gaps in the rear side also the front side may be textured in the same step. Also, the formation of the second doping source layer may be used for doping the front side of the solar cell. The focus in the description of the second embodiment of the invention lies on the processing of the rear side. [0058] (1) Onto a preprocessed silicon wafer 1101 of either n- or p-type that has been saw damage etched and cleaned using conventional etching and cleaning techniques, a thin oxide layer 1201 is grown or deposited (e.g. by heating in oxygen containing atmosphere or by immersing into oxidants containing solutions). An intrinsic silicon layer 1301 and a doping source layer 1401 are deposited. [0059] (2) A laser is used to dope and crystallize local areas of 1301. [0060] (3) By the laser treatment the highly doped area 1501 with increased crystallinity is formed in the regions that are irradiated by the laser. [0061] (4) After removal of the doping source layer 1401 in a suitable etchant, an alkaline etching step (in this case a texturing step producing random pyramids) forms an alkaline etched surface 1601. [0062] (5) Onto that wafer surface a second thin oxide layer 1202 is grown or deposited (e.g. by heating in oxygen containing atmosphere or by immersing into oxidants containing solutions). A second intrinsic silicon layer 1302 and a doping source for opposite dopant layer 1402 are deposited. [0063] (6) Similar to (2) a laser is used to produce a second highly doped layer 1502 of the second polarity. The non-doped gap between the polarities should be minimized for best passivation quality, yet remain large enough to get good reverse current behavior. [0064] (7) Shows the structure after the second lasering step. [0065] (8) Next the dopant source layer is removed. In one embodiment, also the intrinsic, non-treated region may be removed following the disclosed principle of this invention (not shown). [0066] (9) A capping layer 1801 is deposited on top. [0067] (10) The metallization of the two polarities 1911 and 1912 is applied using a conventional solar cell metallization process, such as screen printing of metal paste or plating.

[0068] As stated beforehand, instead of alkaline texturing, also alkaline etching without additive producing flat surfaces may be used the resulting process sequence, from (1)-(5) changes only slightly. In addition, as mentioned above, the non-treated region in the second Si-layer may be etched, if for the second polarity the crystallization of an amorphous layer is employed. Several possible different embodiments of the inventions are schematically drawn in FIG. 4. In all case the front side (facing downwards in the drawing) is textured, diffused 1702 and anti-reflective coated 1802.

REFERENCE NUMERALS

[0069] 101,1101 wafer [0070] 201,1201,1202 oxide layer [0071] 301,1301,1302 silicon layer [0072] 401,1401,1402 doping source layer [0073] 501,1501,1502 doped region (in laser treated areas) [0074] 601,1601 alkaline etched surface [0075] 701,1701,1702 doped region (between laser-treated areas) [0076] 801,1801,1802 antireflective coating [0077] 901,902,903,1911,1912 metallization finger