ORGANIC ELECTROLUMINESCENT DEVICE

20230371294 · 2023-11-16

Inventors

Cpc classification

International classification

Abstract

The present invention relates to organic electroluminescent devices including one or more light-emitting layers, each of which is composed of one or more sublayers including as a whole one or more excitation energy transfer components EET-1, one or more hole scavengers H.sub.scav, one or more small full width at half maximum (FWHM) emitters S.sup.B emitting light with an FWHM of less than or equal to 0.25 eV. Furthermore, the present invention relates to a method for generating light by means of an organic electroluminescent device according to the present invention.

Claims

1-15. (canceled)

16. An organic electroluminescent device comprising: one or more light-emitting layers, each comprising one or more sublayers, wherein the one or more sublayers are adjacent to each other and as a whole comprise: one or more excitation energy transfer components (EET-1), each having a highest occupied molecular orbital HOMO(EET-1) with an energy E.sup.HOMO(EET-1) and a lowest unoccupied molecular orbital LUMO(EET-1) with an energy E.sup.LUMO(EET-1); and one or more hole scavengers (H.sub.scav), each having a highest occupied molecular orbital HOMO(H.sub.scav) with an energy E.sup.HOMO(H.sub.scav) and a lowest unoccupied molecular orbital LUMO(H.sub.scav) with an energy E.sup.LUMO(H.sub.scav); and one or more small full width at half maximum (FWHM) emitters (S.sup.B), each having a highest occupied molecular orbital HOMO(S.sup.B) with an energy E.sup.HOMO(S.sup.B), and a lowest unoccupied molecular orbital LUMO(S.sup.B) with an energy E.sup.LUMO(S.sup.B), wherein each small FWHM emitter is to emit light with an FWHM of less than or equal to 0.25 eV; and optionally one or more host materials (H.sup.B), each having a highest occupied molecular orbital HOMO(H.sup.B) with an energy E.sup.HOMO(H.sup.B), and a lowest unoccupied molecular orbital LUMO(H.sup.B) with an energy E.sup.LUMO(H.sup.B), wherein the one or more sublayers that are located at an outer surface of each light-emitting layer comprise at least one material selected from the group consisting of the excitation energy transfer components, the hole scavengers, and the small FWHM emitters, and wherein when the respective excitation energy transfer components, hole scavengers, small FWHM emitters, and optional host materials are in the same light-emitting layer,
E.sup.LUMO(EET-1)<E.sup.LUMO(H.sup.B) (1),
E.sup.LUMO(EET-1)<E.sup.LUMO(H.sub.scav) (2),
E.sup.LUMO(EET-1)<E.sup.LUMO(S.sup.B) (3),
E.sup.HOMO(H.sub.scav)≥E.sup.HOMO(H.sup.B) (4),
E.sup.HOMO(H.sub.scav)≥E.sup.HOMO(EET-1) (5), and
E.sup.HOMO(H.sub.scav)≥E.sup.HOMO(S.sup.B) (6).

17. The organic electroluminescent device according to claim 16, wherein, in at least one light-emitting layer of the one or more light-emitting layers, the lowest unoccupied molecular orbital LUMO(EET-1) of at least one excitation energy transfer component of the one or more excitation energy transfer components has an energy E.sup.LUMO(EET-1) of less than −2.3 eV.

18. The organic electroluminescent device according to claim 16, wherein at least one light-emitting layer of the one or more light-emitting layers comprises less than or equal to 5% by weight, based on the total weight of the at least one light-emitting layer, of the one or more small FWHM emitters.

19. The organic electroluminescent device according to claim 16, wherein at least one light-emitting layer of the one or more light-emitting layers comprises 15% to 50% by weight, based on the total weight of the at least one light-emitting layer, of the one or more excitation energy transfer components.

20. The organic electroluminescent device according to claim 16, wherein at least one light-emitting layer of the one or more light-emitting layers comprises less than or equal to 5% by weight, based on the total weight of the at least one light-emitting layer, of the one or more hole scavengers.

21. The organic electroluminescent device according to claim 16, wherein: (i) each excitation energy transfer component has a lowermost excited singlet state S1.sup.EET-1 with an energy level E(S1.sup.EET-1) and a lowermost excited triplet state T1.sup.EET-1 with an energy level E(T1.sup.EET-1); and (ii) each hole scavenger has a lowermost excited singlet state S1.sup.Hscav with an energy level E(S1.sup.H.sub.scav) and a lowermost excited triplet state T1.sup.Hscav with an energy level E(T1.sup.H.sub.scav); and (iii) each small full width at half maximum (FWHM) emitter has a lowermost excited singlet state S1.sup.S with an energy level E(S1.sup.S) and a lowermost excited triplet state T1.sup.S with an energy level E(T1.sup.S); and (iv) each optionally comprised host material has a lowermost excited singlet state S1.sup.H with an energy level E(S1.sup.H) and a lowermost excited triplet state T1.sup.H with an energy level E(T1.sup.H); wherein when the respective excitation energy transfer components, hole scavengers, small FWHM emitters, and optional host materials are in the same light-emitting layer,
E(S1.sup.H)>E(S1.sup.EET-1) (7),
E(S1.sup.H)>E(S1.sup.Hscav) (8), and
E(S1.sup.H)>E(S1.sup.S) (9).

22. The organic electroluminescent device according to claim 16, wherein the organic electroluminescent device is to emit light with an FWHM of a main emission peak of less than a value selected from the group consisting of 0.25 eV, 0.20 eV, 0.15 eV, and 0.13 eV.

23. The organic electroluminescent device according to claim 16, wherein each light-emitting layer of the one or more light-emitting layers consists of exactly one (sub)layer.

24. The organic electroluminescent device according to claim 21, wherein in each light-emitting layer of the one or more light-emitting layers, at least one excitation energy transfer component of the one or more excitation energy transfer components comprises: (i) a ΔE.sub.ST value, which corresponds to an energy difference between E(S1.sup.EET-1) and E(T1.sup.EET-1), less than a value selected from the group consisting of 0.4 eV, 0.3 eV, 0.2 eV, 0.1 eV, and 0.05 eV; and/or (ii) at least one transition metal with a standard atomic weight of more than 40.

25. The organic electroluminescent device according to claim 16, wherein in at least one light-emitting layer of the one or more light-emitting layers, at least one hole scavenger of the one or more hole scavengers is an excitation energy transfer component, and wherein within at least one light-emitting layer that comprises the excitation energy transfer component, at least one the excitation energy transfer component comprises iridium (Ir) or platinum (Pt).

26. The organic electroluminescent device according to claim 16, wherein in at least one light-emitting layer of the one or more light-emitting layers, at least one small FWHM emitter of the one or more small FWHM emitters comprises boron and/or a pyrene core structure.

27. The organic electroluminescent device according to claim 16, wherein in at least one light-emitting layer of the one or more light-emitting layers, at least one small FWHM emitter of the one or more small FWHM emitters comprises a structure according to Formula DABNA-I or Formula BNE-1: ##STR00508## wherein each of ring A′, ring B′, and ring C′ independently of each other represents an aromatic or heteroaromatic ring, each comprising 5 to 24 ring atoms, wherein in the heteroaromatic ring, 1 to 3 ring atoms are heteroatoms independently of each other selected from N, O, S, and Se, wherein, one or more hydrogen atoms in each of the aromatic or heteroaromatic rings A′, B′, and C′ are optionally and independently of each other substituted by a substituent R.sup.DABNA-1, which is at each occurrence independently of each other selected from the group consisting of: deuterium; N(R.sup.DABNA-2); OR.sup.DABNA-2; SR.sup.DABNA-2; Si(R.sup.DABNA-2).sub.3; B(OR.sup.DABNA-2).sub.2; OSO.sub.2R.sup.DABNA-2; CF.sub.3; CN; halogen; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.DABNA-2 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-2C═CR.sup.DABNA-2, C≡C, Si(R.sup.DABNA-2).sub.2, Ge(R.sup.DABNA-2).sub.2, Sn(R.sup.DABNA_2).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-2, P(═O)(R.sup.DABNA-2), SO, SO.sub.2, NR.sup.DABNA-2, O, S, or CONR.sup.DABNA-2; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-2 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-2C═CR.sup.DABNA-2, C≡C, Si(R.sup.DABNA-2).sub.2, Ge(R.sup.DABNA-2).sub.2, Sn(R.sup.DABNA-2).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-2, P(═O)(R.sup.DABNA-2), SO, SO.sub.2, NR.sup.DABNA-2, O, S, or CONR.sup.DABNA-2; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-2 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-2C═CR.sup.DABNA-2, C≡C, Si(R.sup.DABNA-2).sub.2, Ge(R.sup.DABNA-2).sub.2, Sn(R.sup.DABNA-2).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-2, P(═O)(R.sup.DABNA-2), SO, SO.sub.2, NR.sup.DABNA-2, O, S, or CONR.sup.DABNA-2; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.DABNA-2 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-2C═CR.sup.DABNA-2, C≡C, Si(R.sup.DABNA-2).sub.2, Ge(R.sup.DABNA-2).sub.2, Sn(R.sup.DABNA-2).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-2, P(═O)(R.sup.DABNA-2), SO, SO.sub.2, NR.sup.DABNA-2, O, S, or CONR.sup.DABNA-2; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.DABNA-2 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-2C═CR.sup.DABNA-2, Si(R.sup.DABNA-2).sub.2, Ge(R.sup.DABNA-2).sub.2, Sn(R.sup.DABNA-2).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-2, P(═O)(R.sup.DABNA-2), SO, SO.sub.2, NR.sup.DABNA-2, O, S, or CONR.sup.DABNA-2; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.DABNA-2; C.sub.3-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.DABNA-2; and aliphatic and cyclic amines comprising 4 to 18 carbon atoms and 1 to 3 nitrogen atoms, R.sup.DABNA-2 is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.DABNA-6).sub.2; OR.sup.DABNA-6; SR.sup.DABNA-6; Si(R.sup.DABNA-6).sub.3; B(OR.sup.DABNA-6).sub.2; OSO.sub.2R.sup.DABNA-6; CF.sub.3; CN; halogen; C.sub.1-C.sub.5-alkyl, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.1-C.sub.5-alkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.1-C.sub.5-thioalkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.2-C.sub.5-alkenyl, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.2-C.sub.5-alkynyl, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.6-C.sub.18-aryl, which is optionally substituted with one or more substituents R.sup.DABNA-6; C.sub.3-C.sub.17-heteroaryl, which is optionally substituted with one or more substituents R.sup.DABNA-6; and aliphatic and cyclic amines comprising 4 to 18 carbon atoms and 1 to 3 nitrogen atoms, wherein two or more adjacent substituents selected from R.sup.DABNA-1, and R.sup.DABNA-2 optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system which is fused to the adjacent ring A′, B′ or C′, wherein the optionally formed fused ring system comprises in total 8 to 30 ring atoms; Y.sup.a and Y.sup.b are independently of each other selected from a direct single bond, NR.sup.DABNA-3, O, S, C(R.sup.DABNA-3).sub.2, Si(R.sup.DABNA-3).sub.2, BR.sup.DABNA-3, and Se; R.sup.DABNA-3 is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.DABNA-4).sub.2; OR.sup.DABNA-4; SR.sup.DABNA-4; Si(R.sup.DABNA-4).sub.3; B(OR.sup.DABNA-4).sub.2; OSO.sub.2R.sup.DABNA-4; CF.sub.3; CN; halogen; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.DABNA-4 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-4, C═CR.sup.DABNA-4, C≡C, Si(R.sup.DABNA-4).sub.2, Ge(R.sup.DABNA-4).sub.2, Sn(R.sup.DABNA-4).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-4, P(═O)(R.sup.DABNA-4), SO, SO.sub.2, NR.sup.DABNA-4, O, S, or CONR.sup.DABNA-4; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-4 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-4, C═CR.sup.DABNA-4, C≡C, Si(R.sup.DABNA-4).sub.2, Ge(R.sup.DABNA-4).sub.2, Sn(R.sup.DABNA-4).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-4, P(═O)(R.sup.DABNA-4), SO, SO.sub.2, NR.sup.DABNA-4, O, S, or CONR.sup.DABNA-4; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-4 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-4, C═CR.sup.DABNA-4, C≡C, Si(R.sup.DABNA-4).sub.2, Ge(R.sup.DABNA-4).sub.2, Sn(R.sup.DABNA-4).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-4, P(═O)(R.sup.DABNA-4), SO, SO.sub.2, NR.sup.DABNA-4, O, S, or CONR.sup.DABNA-4; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.DABNA-4 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-4, C═CR.sup.DABNA-4, C≡C, Si(R.sup.DABNA-4).sub.2, Ge(R.sup.DABNA-4).sub.2, Sn(R.sup.DABNA-4).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-4, P(═O)(R.sup.DABNA-4), SO, SO.sub.2, NR.sup.DABNA-4, O, S, or CONR.sup.DABNA-4; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.DABNA-4 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-4, C═CR.sup.DABNA-4, Si(R.sup.DABNA-4).sub.2, Ge(R.sup.DABNA-4).sub.2, Sn(R.sup.DABNA-4).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-4, P(═O)(R.sup.DABNA-4), SO, SO.sub.2, NR.sup.DABNA-4, O, S, or CONR.sup.DABNA-4; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.DABNA-4; C.sub.3-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.DABNA-4; and aliphatic and cyclic amines comprising 4 to 18 carbon atoms and 1 to 3 nitrogen atoms, R.sup.DABNA-4 is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.DABNA-5).sub.2; OR.sup.DABNA-5; SR.sup.DABNA-5; Si(R.sup.DABNA-5).sub.3; B(OR.sup.DABNA-5).sub.2; OSO.sub.2R.sup.DABNA-5; CF.sub.3; CN; halogen; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.DABNA-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-5C═CR.sup.DABNA-5, C≡C, Si(R.sup.DABNA-5).sub.2, Ge(R.sup.DABNA-5).sub.2, Sn(R.sup.DABNA-5).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-5, P(═O)(R.sup.DABNA-5), SO, SO.sub.2, NR.sup.DABNA-5, O, S, or CONR.sup.DABNA-5; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-5C═CR.sup.DABNA-5, C≡C, Si(R.sup.DABNA-5).sub.2, Ge(R.sup.DABNA-5).sub.2, Sn(R.sup.DABNA-5).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-5, P(═O)(R.sup.DABNA-5), SO, SO.sub.2, NR.sup.DABNA-5, O, S, or CONR.sup.DABNA-5; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-5C═CR.sup.DABNA-5, C≡C, Si(R.sup.DABNA-5).sub.2, Ge(R.sup.DABNA-5).sub.2, Sn(R.sup.DABNA-5).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-5, P(═O)(R.sup.DABNA-5), SO, SO.sub.2, NR.sup.DABNA-5, O, S, or CONR.sup.DABNA-5; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.DABNA-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-5C═CR.sup.DABNA-5, C≡C, Si(R.sup.DABNA-5).sub.2, Ge(R.sup.DABNA-5).sub.2, Sn(R.sup.DABNA-5).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-5, P(═O)(R.sup.DABNA-5), SO, SO.sub.2, NR.sup.DABNA-5, O, S, or CONR.sup.DABNA-5; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.DABNA-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-5C═CR.sup.DABNA-5, Si(R.sup.DABNA-5).sub.2, Ge(R.sup.DABNA-5).sub.2, Sn(R.sup.DABNA-5).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-5), P(═O)(R.sup.DABNA-5), SO, SO.sub.2, NR.sup.DABNA-5, O, S, or CONR.sup.DABNA-5; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.DABNA-5; C.sub.3-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.DABNA-5; and aliphatic and cyclic amines comprising 4 to 18 carbon atoms and 1 to 3 nitrogen atoms, R.sup.DABNA-5 is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.DABNA-6).sub.2; OR.sup.DABNA-6, SR.sup.DABNA-6; Si(R.sup.DABNA-6).sub.3; B(OR.sup.DABNA-6).sub.2; OSO.sub.2R.sup.DABNA-6; CF.sub.3; CN; halogen; C.sub.1-C.sub.5-alkyl, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.1-C.sub.5-alkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.1-C.sub.5-thioalkoxy, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.2-C.sub.5-alkenyl, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, C≡C, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.2-C.sub.5-alkynyl, which is optionally substituted with one or more substituents R.sup.DABNA-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.DABNA-6C═CR.sup.DABNA-6, Si(R.sup.DABNA-6).sub.2, Ge(R.sup.DABNA-6).sub.2, Sn(R.sup.DABNA-6).sub.2, C═O, C═S, C═Se, C═NR.sup.DABNA-6, P(═O)(R.sup.DABNA-6), SO, SO.sub.2, NR.sup.DABNA-6, O, S, or CONR.sup.DABNA-6; C.sub.6-C.sub.18-aryl, which is optionally substituted with one or more substituents R.sup.DABNA-6; C.sub.3-C.sub.17-heteroaryl, which is optionally substituted with one or more substituents R.sup.DABNA-6; and aliphatic and cyclic amines comprising 4 to 18 carbon atoms and 1 to 3 nitrogen atoms, wherein two or more adjacent substituents selected from R.sup.DABNA-3, R.sup.DABNA-4, and R.sup.DABNA-5, optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbocyclic or heterocyclic ring system with each other, wherein the optionally formed ring system comprises in total 8 to 30 ring atoms; R.sup.DABNA-6 is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; OPh (Ph=phenyl); SPh; CF.sub.3; CN; F; Si(C.sub.1-C.sub.5-alkyl).sub.3; Si(Ph).sub.3; C.sub.1-C.sub.5-alkyl, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, Ph, CN, CF.sub.3, or F; C.sub.1-C.sub.5-alkoxy, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF.sub.3, or F; C.sub.1-C.sub.5-thioalkoxy, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF.sub.3, or F; C.sub.2-C.sub.5-alkenyl, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF.sub.3, or F; C.sub.2-C.sub.5-alkynyl, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF.sub.3, or F; C.sub.6-C.sub.18-aryl, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF.sub.3, F, C.sub.1-C.sub.5-alkyl, SiMe.sub.3, SiPh.sub.3, or C.sub.6-C.sub.18-aryl substituents; C.sub.3-C.sub.17-heteroaryl, wherein optionally one or more hydrogen atoms are independently substituted by deuterium, CN, CF.sub.3, F, C.sub.1-C.sub.5-alkyl, SiMe.sub.3, SiPh.sub.3, or C.sub.6-C.sub.18-aryl substituents; N(C.sub.6-C.sub.18-aryl).sub.2; N(C.sub.3-C.sub.17-heteroaryl).sub.2; and N(C.sub.3-C.sub.17-heteroaryl)(C.sub.6-C.sub.18-aryl), wherein, when one of Y.sup.a and Y.sup.b is or both of Y.sup.a and Y.sup.b are NR.sup.DABNA-3, C(R.sup.DABNA-3).sub.2, Si(R.sup.DABNA-3).sub.2, or BR.sup.DABNA-3, the one or the two substituents R.sup.DABNA-3 may optionally and independently of each other bond to one or both of the adjacent rings A′ and B′, for Y.sup.a=NR.sup.DABNA-3, C(R.sup.DABNA-3).sub.2, Si(R.sup.DABNA-3).sub.2, or BR.sup.DABNA-3, or A′ and C′, for Y.sup.b=NR.sup.DABNA-3, C(R.sup.DABNA-3).sub.2, Si(R.sup.DABNA-3).sub.2, or BR.sup.DABNA-3, via a direct single bond or via a connecting atom or atom group being each independently selected from NR.sup.DABNA-1, O, S, C(R.sup.DABNA-1).sub.2, Si(R.sup.DABNA-1).sub.2, BR.sup.DABNA-1, and Se; and wherein optionally, two or more structures of Formula DABNA-I are conjugated with each other or fused to each other by sharing at least one bond; wherein optionally two or more structures of Formula DABNA-I are present in the at least one small FWHM emitter and share at least one aromatic or heteroaromatic ring which is any selected from the rings A′, B′, and C′ of Formula DABNA-I, or any aromatic or heteroaromatic substituent selected from R.sup.DABNA-1, R.sup.DABNA-2, R.sup.DABNA-3R.sup.DABNA-4, R.sup.DABNA-5, and R.sup.DABNA-6 or any aromatic or heteroaromatic ring formed by two or more adjacent substituents, wherein the shared ring constitutes the same or different moieties of the two or more structures of Formula DABNA-I that share the ring; and wherein optionally at least one selected from R.sup.DABNA-1, R.sup.DABNA-2, R.sup.DABNA-3, R.sup.DABNA-4, R.sup.DABNA-5, and R.sup.DABNA-6 is replaced by a bond to a further chemical entity of Formula DABNA-I and/or wherein optionally at least one hydrogen atom of any selected from R.sup.DABNA-1, R.sup.DABNA-2, R.sup.DABNA-3, R.sup.DABNA-4, R.sup.DABNA-5, and R.sup.DABNA-6 is replaced by a bond to a further chemical entity of Formula DABNA-I; ##STR00509## wherein, c and d are both integers and independently of each other selected from 0 and 1; e and f are both integers and selected from 0 and 1, wherein e and f are identical; g and h are both integers and selected from 0 and 1, wherein g and h are identical; when d is 0, e and f are both 1, and when d is 1, e and f are both 0; when c is 0, g and h are both 1, and when c is 1, g and h are both 0; V.sup.1 is selected from nitrogen (N) and CR.sup.BNE-V; V.sup.2 is selected from nitrogen (N) and CR.sup.BNE-I; X.sup.3 is selected from the group consisting of a direct bond, CR.sup.BNE-3R.sup.BNE-4, C═CR.sup.BNE-3R.sup.BNE-4, C═O, C═NR.sup.BNE-3, NR.sup.BNE-3, O, SiR.sup.BNE-3R.sup.BNE-4, S, S(O), and S(O).sub.2; Y.sup.2 is selected from the group consisting of a direct bond, CR.sup.BNE-3′, R.sup.BNE-4′, C═CR.sup.BNE-3′R.sup.BNE-4′, C═O, C═NR.sup.BNE-3′, NR.sup.BNE-3′, O, SiR.sup.BNE-3′R.sup.BNE-4′, S, S(O), and S(O).sub.2; R.sup.BNE-1, R.sup.BNE-2, R.sup.BNE-1′, R.sup.BNE-2′, R.sup.BNE-3, R.sup.BNE-4, R.sup.BNE-3′, R.sup.BNE-4′, R.sup.BNE-I, R.sup.BNE-II, R.sup.BNE-III, R.sup.BNE-IV, and R.sup.BNE-V are each independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.BNE-5).sub.2; OR.sup.BNE-5; Si(R.sup.BNE-5).sub.3; B(OR.sup.BNE-5).sub.2; B(R.sup.BNE-5).sub.2; OSO.sub.2R.sup.BNE-5; CF.sub.3; CN; F; Cl; Br; I; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, Si(R.sup.BNE-5) Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.BNE-5; and C.sub.2-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.BNE-5; R.sup.BNE-d, R.sup.BNE-d′, and R.sup.BNE-e are independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.BNE-5).sub.2; OR.sup.BNE-5; Si(R.sup.BNE-5).sub.3, B(OR.sup.BNE-5).sub.2; B(R.sup.BNE-5).sub.2; OSO.sub.2R.sup.BNE-5; CF.sub.3; CN; F; Cl; Br; I; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.BNE-a and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.BNE-a and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.BNE-a and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.BNE-a and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.BNE-a and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE- C═CR.sup.BNE-5, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.BNE-a; and C.sub.2-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.BNE-a; R.sup.BNE-a is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.BNE-5).sub.2; OR.sup.BNE-5; Si(R.sup.BNE-5).sub.3; B(OR.sup.BNE-5).sub.2; B(R.sup.BNE-5).sub.2; OSO.sub.2R.sup.BNE-5; CF.sub.3; CN; F; Cl; Br; I; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-5C═CR.sup.BNE-5, C≡C, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.BNE-5 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE- C═CR.sup.BNE-5, Si(R.sup.BNE-5).sub.2, Ge(R.sup.BNE-5).sub.2, Sn(R.sup.BNE-5).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-5, P(═O)(R.sup.BNE-5), SO, SO.sub.2, NR.sup.BNE-5, O, S, or CONR.sup.BNE-5; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.BNE-5; and C.sub.2-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.BNE-5; R.sup.BNE-5 is at each occurrence independently of each other selected from the group consisting of: hydrogen; deuterium; N(R.sup.BNE-6).sub.2; OR.sup.BNE-6; Si(R.sup.BNE-6).sub.3; B(OR.sup.BNE-6).sub.2; B(R.sup.BNE-6).sub.2; OSO.sub.2R.sup.BNE-6; CF.sub.3; CN; F; Cl; Br; I; C.sub.1-C.sub.40-alkyl, which is optionally substituted with one or more substituents R.sup.BNE-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-6C═CR.sup.BNE-6, C≡C, Si(R.sup.BNE-6).sub.2, Ge(R.sup.BNE-6).sub.2, Sn(R.sup.BNE-6).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-6, P(═O)(R.sup.BNE-6), SO, SO.sub.2, NR.sup.BNE-6, O, S, or CONR.sup.BNE-6; C.sub.1-C.sub.40-alkoxy, which is optionally substituted with one or more substituents R.sup.BNE-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-6C═CR.sup.BNE-6, C≡C, Si(R.sup.BNE-6).sub.2, Ge(R.sup.BNE-6).sub.2, Sn(R.sup.BNE-6).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-6, P(═O)(R.sup.BNE-6), SO, SO.sub.2, NR.sup.BNE-6, O, S, or CONR.sup.BNE-6; C.sub.1-C.sub.40-thioalkoxy, which is optionally substituted with one or more substituents R.sup.BNE-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-6C═CR.sup.BNE-6, C≡C, Si(R.sup.BNE-6).sub.2, Ge(R.sup.BNE-6).sub.2, Sn(R.sup.BNE-6).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-6, P(═O)(R.sup.BNE-6), SO, SO.sub.2, NR.sup.BNE-6, O, S, or CONR.sup.BNE-6; C.sub.2-C.sub.40-alkenyl, which is optionally substituted with one or more substituents R.sup.BNE-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-6C═CR.sup.BNE-6, C≡C, Si(R.sup.BNE-6).sub.2, Ge(R.sup.BNE-6).sub.2, Sn(R.sup.BNE-6).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-6, P(═O)(R.sup.BNE-6), SO, SO.sub.2, NR.sup.BNE-6, O, S, or CONR.sup.BNE-6; C.sub.2-C.sub.40-alkynyl, which is optionally substituted with one or more substituents R.sup.BNE-6 and wherein one or more non-adjacent CH.sub.2-groups are optionally substituted by R.sup.BNE-6C═CR.sup.BNE-6, Si(R.sup.BNE-6).sub.2, Ge(R.sup.BNE-6).sub.2, Sn(R.sup.BNE-6).sub.2, C═O, C═S, C═Se, C═NR.sup.BNE-6, P(═O)(R.sup.BNE-6), SO, SO.sub.2, NR.sup.BNE-6, O, S, or CONR.sup.BNE-6; C.sub.6-C.sub.60-aryl, which is optionally substituted with one or more substituents R.sup.BNE-6; and C.sub.2-C.sub.57-heteroaryl, which is optionally substituted with one or more substituents R.sup.BNE-6; R.sup.BNE-6 is at each occurrence independently from another selected from the group consisting of: hydrogen; deuterium; OPh; CF.sub.3; CN; F; C.sub.1-C.sub.5-alkyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF.sub.3, Ph or F; C.sub.1-C.sub.5-alkoxy, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF.sub.3, or F; C.sub.1-C.sub.5-thioalkoxy, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF.sub.3, or F; C.sub.2-C.sub.5-alkenyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF.sub.3, or F; C.sub.2-C.sub.5-alkynyl, wherein one or more hydrogen atoms are optionally, independently of each other substituted by deuterium, CN, CF.sub.3, or F; C.sub.6-C.sub.18-aryl, which is optionally substituted with one or more C.sub.1-C.sub.5-alkyl substituents; C.sub.2-C.sub.17-heteroaryl, which is optionally substituted with one or more C.sub.1-C.sub.5-alkyl substituents; N(C.sub.6-C.sub.18-aryl).sub.2; N(C.sub.2-C.sub.17-heteroaryl).sub.2; and N(C.sub.2-C.sub.17-heteroaryl)(C.sub.6-C.sub.18-aryl); wherein R.sup.BNE-III and R.sup.BNE-e optionally combine to form a direct single bond; and wherein two or more of substituents R.sup.BNE-a, R.sup.BNE-d, R.sup.BNE-d′, R.sup.BNE-e, R.sup.BNE-3′, R.sup.BNE-4′ R.sup.BNE-5 optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other; wherein two or more of the substituents R.sup.BNE-1, R.sup.BNE-2, R.sup.BNE-1′, R.sup.BNE-2′, R.sup.BNE-3, R.sup.BNE-4, R.sup.BNE-5, R.sup.BNE-I, R.sup.BNE-II, R.sup.BNE-III, R.sup.BNE-IV, R.sup.BNE-V, optionally form a mono- or polycyclic, aliphatic or aromatic or heteroaromatic, carbo- or heterocyclic ring system with each other; wherein optionally two or more structures of Formula BNE-1 are conjugated with each other or fused to each other by sharing at least one bond; wherein optionally two or more structures of Formula BNE-1 are present in the at least one small FWHM emitter and share at least one aromatic or heteroaromatic ring which is any selected from the rings a, b, and c′ of Formula BNE-1, or any aromatic or heteroaromatic substituent selected from R.sup.BNE-1, R.sup.BNE-2, R.sup.BNE-1′, R.sup.BNE-2′, R.sup.BNE-3, R.sup.BNE-4, R.sup.BNE-3′, R.sup.BNE-4′, R.sup.BNE-5, R.sup.BNE-6, R.sup.BNE-I, R.sup.BNE-II, R.sup.BNE-III, R.sup.BNE-IV, R.sup.BNE-V, R.sup.BNE-a, R.sup.BNE-e, R.sup.BNE-d, and R.sup.BNE-d′, or any aromatic or heteroaromatic ring formed by two or more substituents, wherein the shared ring constitute the same or different moieties of the two or more structures of Formula BNE-1 that share the ring; and wherein optionally at least one of R.sup.BNE-1, R.sup.BNE-2, R.sup.BNE-1′, R.sup.BNE-2′, R.sup.BNE-3, R.sup.BNE-4, R.sup.BNE-5, R.sup.BNE-3′, R.sup.BNE-4′, R.sup.BNE-6, R.sup.BNE-I, R.sup.BNE-II, R.sup.BNE-III, R.sup.BNE-IV, R.sup.BNE-V, R.sup.BNE-a, R.sup.BNE-e, R.sup.BNE-d, or R.sup.BNE-d′ is replaced by a bond to a further chemical entity of Formula BNE-1, and/or wherein optionally at least one hydrogen atom of any selected from R.sup.BNE-1, R.sup.BNE-2, R.sup.BNE-1′, R.sup.BNE-2′, R.sup.BNE-3, R.sup.BNE-4, R.sup.BNE-5, R.sup.BNE-3′, R.sup.BNE-4′, R.sup.BNE-6, R.sup.BNE-I, R.sup.BNE-II, R.sup.BNE-III, R.sup.BNE-IV, R.sup.BNE-V, R.sup.BNE-a, R.sup.BNE-e, R.sup.BNE-d, and R.sup.BNE-d′ is replaced by a bond to a further chemical entity of Formula BNE-1.

28. The organic electroluminescent device according to claim 16, wherein for at least one light-emitting layer of the one or more light-emitting layers, a recombination zone, where electron-hole-recombination occurs upon applying an electrical current to the organic electroluminescent device, comprises: (i) 20-80% of a volume thereof that is located between an electron blocking layer (EBL) and an imaginary boundary surface (S.sup.EML), wherein the S.sup.EML is parallel to the EBL and located exactly in the middle of the respective light-emitting layer; and (ii) 20-80% of the volume thereof that is located between a hole blocking layer (HBL) and the imaginary boundary surface (S.sup.EML), wherein the S.sup.EML is parallel to the HBL and located exactly in the middle of the respective light-emitting layer; wherein both the EBL and the HBL are adjacent to the light-emitting layer B with the EBL being closer to an anode and the HBL being closer to a cathode; and wherein the total volume of the recombination zone adds up to 100%.

29. A method for generating light, the method comprising: applying an electrical current to the organic electroluminescent device according to claim 16 to generate light.

30. The method according to claim 29, wherein the light has an emission maximum being within a wavelength range selected from: (i) from 510 nm to 550 nm, (ii) from 440 nm to 470 nm, and (iii) from 610 nm to 665 nm.

31. The organic electroluminescent device according to claim 16, wherein each of the one or more small FWHM emitters is to emit light with an FWHM of less than or equal to 0.25 eV.

32. The organic electroluminescent device according to claim 16, wherein each of the one or more light-emitting layers comprises less than or equal to 5% by weight, based on the total weight of the light-emitting layer, of the one or more small FWHM emitters.

33. The organic electroluminescent device according to claim 16, wherein each of the one or more light-emitting layers comprises 15-50% by weight, based on the total weight of the light-emitting layer, of the one or more excitation energy transfer components.

34. The organic electroluminescent device according to claim 16, wherein each of the one or more light-emitting layers comprises less than or equal to 5% by weight, based on the total weight of the light-emitting layer, of the one or more hole scavengers.

35. The organic electroluminescent device according to claim 16, wherein the organic electroluminescent device is to emit light with an FWHM of a main emission peak of below 0.15 eV.

Description

DESCRIPTION OF FIGURES

[2138] FIG. 1 gives a schematic layer structure of exemplary organic electroluminescent devices (in accordance with the setup 1 given in table 2, vide infra) as well as a close up view on the light-emitting layer (EML). Herein, the layers have the following meaning: S: glass substrate, 1: anode (layer), 2: hole injection layer (HIL), 3: hole transport layer 1 (HTL-1), 4: hole transport layer 2 (HTL-2), 5: electron blocking layer (EBL), 6: light-emitting layer (EML), which is optionally divided in sublayers, 7: hole blocking layer (HBL), 8: electron transport layer (ETL), 9: electron injection layer (EIL), and 10: cathode (layer). A light-emitting layer (EML) may include an imaginary boundary surface S.sup.EML dividing the EML in halves of equal volume. It is shown how the EML may be imaginarily divides in halves of equal volume by an imaginary boundary surface S.sup.EML to assess the distribution of the recombination zone over the imaginarily so-formed halves of the EML (see above).

EXAMPLES

[2139] Cyclic Voltammetry

[2140] Cyclic voltammograms of solutions having concentration of 10.sup.−3 mol/l of the organic molecules in dichloromethane or a suitable solvent and a suitable supporting electrolyte (e.g., 0.1 mol/l of tetrabutylammonium hexafluorophosphate) are measured. The measurements are conducted at room temperature (i.e., (approximately) 20° C.) and under nitrogen atmosphere with a three-electrode assembly (working and counter electrodes: Pt wire, reference electrode: Pt wire) and calibrated using FeCp.sub.2/FeCp.sub.2.sup.+ as internal standard. HOMO and LUMO data was corrected using ferrocene as internal standard against SCE.

[2141] Density Functional Theory Calculation

[2142] Molecular structures are optimized employing the BP86 functional and the resolution of identity approach (RI). Excitation energies are calculated using the (BP86) optimized structures employing Time-Dependent DFT (TD-DFT) methods. Orbital and excited state energies are calculated with the B3LYP functional. Def2-SVP basis sets and a m4-grid for numerical integration were used. The Turbomole program package was used for all calculations. However, herein, orbital and excited state energies are preferably determined experimentally as stated above. All orbital and excited state energies reported herein (see experimental results) have been determined experimentally.

[2143] Photophysical Measurements

[2144] Sample Pretreatment: Vacuum-Evaporation

[2145] As stated before, photophysical measurements of individual compounds (for example organic molecules or transition metal complexes) that may be included in a light-emitting layer B of the organic electroluminescent device according to the present invention (e.g., host materials H.sup.B, host materials host.sup.scav, TADF materials E.sup.B, phosphorescence materials P.sup.B, small FWHM emitters S.sup.B or fluorescence emitters F) were typically performed using either spin-coated neat films (in case of host materials H.sup.B or host.sup.scav) or spin-coated films of the respective material in poly(methyl methacrylate) (PMMA) (e.g., for TADF materials E.sup.B, phosphorescence materials P.sup.B, small FWHM emitters S.sup.B, and fluorescence emitters F). These films were typically spin-coated films and, unless stated differently for specific measurements, the concentration of the materials in the PMMA-films was 10% by weight for TADF materials E.sup.B and for phosphorescent materials P.sup.B or 1-5%, preferably 2% by weight for small FWHM emitters S.sup.B and fluorescence emitters F. Alternatively, and as stated previously, some photophysical measurements may also be performed from solutions of the respective molecules, for example in dichloromethane or toluene, wherein the concentration of the solution is typically chosen so that the maximum absorbance preferably is in a range of 0.1 to 0.5.

[2146] Apparatus: Spin150, SPS Euro.

[2147] The sample concentration was 1.0 mg/ml, typically dissolved in Toluene/DCM as suitable solvent.

[2148] Program: 7-30 sec. at 2000 U/min. After coating, the films were dried at 70° C. for 1 min.

[2149] For the purpose of further studying compositions of certain materials as present in the EML of organic electroluminescent devices (according to the present invention or comparative), the samples for photophysical measurements were produced from the same materials used for device fabrication by vacuum deposition of 50 nm of the respective light-emitting layer B on quartz substrates. Photophysical characterization of the samples are conducted under nitrogen atmosphere.

[2150] Absorption Measurements

[2151] A Thermo Scientific Evolution 201 UV-Visible Spectrophotometer is used to determine the wavelength of the absorption maximum of the sample in the wavelength region above 270 nm. This wavelength is used as excitation wavelength for photoluminescence spectral and quantum yield measurements.

[2152] Photoluminescence Spectra

[2153] Steady-state emission spectra are recorded using a Horiba Scientific, Modell FluoroMax-4 equipped with a 150 W Xenon-Arc lamp, excitation- and emissions monochromators. The samples are placed in a cuvette and flushed with nitrogen during the measurements.

[2154] Photoluminescence Quantum Yield Measurements

[2155] For photoluminescence quantum yield (PLQY) measurements an integrating sphere, the Absolute PL Quantum Yield Measurement C9920-03G system (Hamamatsu Photonics) is used. The samples are kept under nitrogen atmosphere throughout the measurement. Quantum yields are determined using the software U6039-05 and given in %. The yield is calculated using the equation:

[00004] $Φ_{PL} = \frac{n_{photon}, emited}{n_{photon}, absorbed} = \frac{\int \frac{λ}{hc} [{Int}_{emitted}^{sample} (λ) - {Int}_{absorbed}^{sample} (λ)] d λ}{\int \frac{λ}{hc} [{Int}_{emitted}^{reference} (λ) - {Int}_{absorbed}^{reference} (λ)] d λ}$ [2156] wherein n.sub.photon denotes the photon count and Int. is the intensity. For quality assurance, anthracene in ethanol (known concentration) is used as reference.

[2157] TCSPC (Time-Correlated Single-Photon Counting)

[2158] Unless stated otherwise in the context of certain embodiments or analyses, excited state population dynamics are determined employing Edinburgh Instruments FS5 Spectrofluoremeters, equipped with an emission monochromator, a temperature stabilized photomultiplier as detector unit and a pulsed LED (310 nm central wavelength, 910 ps pulse width) as excitation source. The samples are placed in a cuvette and flushed with nitrogen during the measurements.

[2159] To determine the average decay time τ of a measured transient photoluminescence signal, the data is fitted with a sum of n exponential functions:

[00005] ${.Math.}_{i = 1}^{n} A_{i} \exp (- \frac{t}{t_{i}})$ [2160] wherein n is an integer between 1 and 3. By weighting the specific decay time constants τ with the corresponding amplitudes A.sub.i, the excited state lifetime τ is determined:

[00006] $\overline{τ} = \frac{{.Math.}_{i = 1}^{n} A_{i} τ_{i}}{{.Math.}_{i = 1}^{n} A_{i}}$

[2161] The method may be applied for fluorescence and phosphorescence materials to determine the excited state lifetimes. For TADF materials, the full decay dynamics as described below need to be gathered.

[2162] Full Decay Dynamics

[2163] The full excited state population decay dynamics over several orders of magnitude in time and signal intensity is achieved by carrying out TCSPC measurements in 4 time windows: 200 ns, 1 μs, and 20 μs, and a longer measurement spanning >80 μs. The measured time curves are then processed in the following way: [2164] A background correction is applied by determining the average signal level before excitation and subtracting. [2165] The time axes are aligned by taking the initial rise of the main signal as reference. [2166] The curves are scaled onto each other using overlapping measurement time regions. [2167] The processed curves are merged to one curve.

[2168] Data analysis is done using mono-exponential or bi-exponential fitting of prompt fluorescence (PF) and delayed fluorescence (DF) decays separately. By weighting the specific decay time constants τ from the fits with the corresponding amplitudes A.sub.i, the average lifetime τ for the prompt (i.e., the prompt fluorescence lifetime) and the delayed-fluorescence (i.e., the delayed fluorescence lifetime), respectively, may be determined as follows:

[00007] $\overline{τ} = \frac{{.Math.}_{i = 1}^{n} A_{i} τ_{i}}{{.Math.}_{i = 1}^{n} A_{i}}$ [2169] wherein n is either 1 or 2.

[2170] The ratio of delayed and prompt fluorescence (n- value) is calculated by the integration of respective photoluminescence decays in time.

[00008] $\frac{\int I_{DF} (t) dt}{\int I_{PF} (t) dt} = n$

[2171] Transient Photoluminescence Measurements with Spectral Resolution

[2172] In transient photoluminescence (PL) measurements with spectral resolution, PL spectra at defined delay times after pulsed optical excitation are recorded.

[2173] An exemplary device for measuring transient PL spectra includes:

[2174] a pulsed laser (eMOPA, CryLas) with a central wavelength of 355 nm and a pulse width of 1 ns to excite the sample.

[2175] a sample chamber configured to house a sample that can be either evacuated or flushed with nitrogen.

[2176] a spectrograph (SpectraPro HRS) to disperse light emitted from the sample.

[2177] a CCD camera (Princeton Instruments PI-MAX4) for wavelength resolved detection of the dispersed emitted light, with integrated timing generator for synchronization with the pulsed laser.

[2178] a personal computer configured to analyze the signal from the CCD camera imported thereinto.

[2179] In the course of the measurement, the sample is placed in the sample chamber and irradiated with the pulsed laser. Emitted light from the sample is taken in a 90 degree direction with respect to the irradiation direction of the laser pulses. It is dispersed by the spectrograph and directed onto the detector (the CCD camera in the exemplary device), thus obtaining a wavelength resolved emission spectrum. The time delay between laser irradiation and detection, and the duration (i.e., the gate time) of detection are controlled by the timing generator.

[2180] It should be noted that transient photoluminescence may be measured by a device different from the one described in the exemplary device.

[2181] Production and Characterization of Organic Electroluminescence Devices

[2182] Via vacuum-deposition methods OLED devices including organic molecules according to the invention can be produced. If a layer contains more than one compound, the weight-percentage of one or more compounds is given in %. The total weight-percentage values amount to 100%, thus if a value is not given, the fraction of this compound equals to the difference between the given values and 100%.

[2183] The not fully optimized OLEDs are characterized using standard methods and measuring electroluminescence spectra, the external quantum efficiency (in %) in dependency on the intensity, calculated using the light detected by the photodiode, and the current. The FWHM of the devices is determined from the electroluminescence spectra as stated previously for photoluminescence spectra (fluorescence or phosphorescence). The reported FWHM refers to the main emission peak (i.e., the peak with the highest emission intensity). The OLED device lifetime is extracted from the change of the luminance during operation at constant current density. The LT50 value corresponds to the time, where the measured luminance decreased to 50% of the initial luminance, analogously LT80 corresponds to the time point, at which the measured luminance decreased to 80% of the initial luminance, LT97 to the time point, at which the measured luminance decreased to 97% of the initial luminance etc.

[2184] Accelerated lifetime measurements are performed (e.g., applying increased current densities). Exemplarily LT80 values at 500 cd/m.sup.2 are determined using the following equation:

[00009] $LT 80 (500 \frac{{cd}^{2}}{m^{2}}) = LT 80 (L_{0}) {(\frac{L_{0}}{500 \frac{{cd}^{2}}{m^{2}}})}^{1.6}$ [2185] wherein L.sub.0 denotes the initial luminance at the applied current density. The values correspond to the average of several pixels (typically two to eight).

[2186] Experimental Results

[2187] Stack Materials

##STR00488## ##STR00489## ##STR00490##

[2188] Host materials H.sup.B

##STR00491## ##STR00492## ##STR00493## ##STR00494##

TABLE-US-00001 TABLE 1H Properties of the host materials. E E Example E.sup.HOMO E.sup.LUMO (S1) (T1) compound [eV] [eV] [eV] [eV] H.sup.B HBM1 −2.91 2.94 EBM1 −5.54 −2.46 3.08 2.36 mCBP −6.02 −2.42 3.6 2.82 PYD2 −6.08 −2.55 3.53 2.81 HB-3 −5.66 −2.35 3.31 2.71 HB-4 −5.85 −2.43 3.42 2.84 HB-5 −5.91 −2.89 2.79 HB-6 −5.94 −2.93 3.01 2.78 HB-7 3.27 2.71 HB-8 2.94 2.70 HB-9 −5.97 −3.10 2.88 2.77 HB-10 3.15 2.75 HB-11 −6.04 −3.10 2.94 2.86 HB-12 −6.23 −3.02 3.21 2.76 HB-13 −6.23 −3.12 3.21 2.76 HB-14 −5.99 −2.48 3.51 2.97 HB-15 −5.64 −2.36 3.28 2.70 HB-16 −5.68 −2.55 3.13 2.81

[2189] TADF materials E.sup.B that may be selected as excitation energy transfer component EET-1 or hole scavenger H.sub.scav (when H.sub.scav is EET-2)

##STR00495## ##STR00496## ##STR00497## ##STR00498## ##STR00499## ##STR00500##

TABLE-US-00002 TABLE 1E Properties of the TADF materials E.sup.B. Example E.sup.HOMO E.sup.LUMO E(S1) E(T1) λ.sub.max.sup.PMMA FWHM PLQY compound [eV] [eV] [eV] [eV] [nm] [eV] [%] E.sup.B E.sup.B-1 −5.97 −3.28 2.69 2.63 518 0.43 61 E.sup.B-2 −5.97 −3.31 2.66 2.72 526 0.43 43 E.sup.B-3 −5.92 −3.25 2.67 2.65 517 0.40 73 E.sup.B-4 −6.00 −3.37 2.63 2.65 525 0.40 54 E.sup.B-5 −5.95 −3.27 2.68 2.64 508 0.41 72 E.sup.B-6 −5.94 −3.24 2.70 2.64 509 0.41 74 E.sup.B-7 −5.94 −3.24 2.70 2.66 509 0.41 71 E.sup.B-8 −5.93 −3.33 2.60 2.59 525 0.39 71 E.sup.B-9 −5.89 −3.15 2.74 2.64 498 0.40 81 E.sup.B-10 −5.99 −3.34 2.65 2.65 520 0.42 54 E.sup.B-11 −5.79 −3.15 2.77 2.81 514 0.50 63 E.sup.B-12 −6.07 −3.19 2.88 2.80 477 0.42 83 E.sup.B-13 −6.15 −3.13 3.02 2.79 454 0.44 72 E.sup.B-14 −6.03 −3.01 3.02 2.97 459 0.45 72 E.sup.B-15 −5.79 −3.02 2.77 2.82 511 0.49 64 E.sup.B-16 −5.71 −3.07 2.64 2.59 517 0.38 68 E.sup.B-17 −5.79 −3.02 2.77 2.77 523 0.51 49 E.sup.B-18 −5.80 −3.04 2.76 522 0.52 52 E.sup.B-19 −5.80 −3.14 2.67 540 0.50 38 E.sup.B-20 −5.71 −3.06 2.65 2.60 510 0.37 69 E.sup.B-21 −5.79 −2.96 2.84 2.88 502 0.51 66 E.sup.B-22 −5.97 −2.94 2.92 2.87 473 0.44 79 E.sup.B-23 −6.05 −3.17 2.88 2.81 478 0.43 79 E.sup.B-24 −5.92 −3.00 2.92 2.87 475 0.44 79

[2190] Phosphorescence materials P.sup.B that may be selected as excitation energy transfer component EET-1 or hole scavenger H.sub.scav (when H.sub.scav is EET-2)

##STR00501##

TABLE-US-00003 TABLE 1P Properties of the materials. Example E.sup.HOMO E.sub.CV.sup.LUMO E.sup.LUMO E(S1) E(T1) λ.sub.max.sup.PMMA FWHM compound [eV] [eV] [eV] [eV] [eV] [nm] [eV] P.sup.B Ir(ppy).sub.3 −5.36 2.56.sup.a 509 0.38 P.sup.B-2 −5.33 −2.32 2.57.sup.b 522 0.34 P.sup.B-3 −5.80 −2.67 2.88.sup.c 482 0.40 P.sup.B-4 −5.24 [2191] wherein E.sub.CV.sup.LUMO is the energy of the lowest unoccupied molecular orbital, which is determined by cyclic voltammetry. .sup.aThe emission spectrum was recorded from a solution of Ir(ppy).sub.3, in chloroform. .sup.bThe emission spectrum was recorded from a 0.001 mg/mL solution of P.sup.B-2 in dichloromethane. .sup.cThe emission spectrum was recorded from a 0.001 mg/mL solution of P.sup.B-3 in toluene.

[2192] Small FWHM emitters S.sup.B (may also be used as fluorescence emitters F and/or may be used as hole scavengers H.sub.scav)

##STR00502## ##STR00503## ##STR00504## ##STR00505## ##STR00506## ##STR00507##

TABLE-US-00004 TABLE 1S Properties of the Small FWHM emitters S.sup.B. Example E.sup.HOMO E.sup.LUMO E(S1) E(T1) λ.sub.max.sup.PMMA FWHM compound [eV] [eV] [eV] [eV] [nm] [eV] S.sup.B S.sup.B-1 −5.54 −3.10 2.44 2.12 538 0.21 S.sup.B-2 −5.53 −3.04 2.49 2.26 525 0.18 S.sup.B-3 −5.55 −3.05 2.50 2.22 520 0.18 S.sup.B-4 −5.48 −3.05 2.43 2.25 537 0.17 S.sup.B-5 −5.47 −3.01 2.46 2.58 527 0.15 S.sup.B-6 −5.56 −3.03 2.53 2.19 518 0.22 S.sup.B-7 −5.48 −2.97 2.53 2.23 521 0.25 S.sup.B-8* −5.86 −3.40 2.46 517 0.10 S.sup.B-9 −5.47 −.2.66 2.81 460 0.14 S.sup.B-10 −5.46 −2.65 2.81 459 0.15 S.sup.B-11 −5.33 −2.51 2.82 458 0.16 S.sup.B-12 −5.49 −2.63 2.86 451 0.14 S.sup.B-13 2.79 464 0.24 S.sup.B-14 −5.31 −2.50 2.81 2.61 459 0.16 S.sup.B-15 −5.40 −2.66 2.74 468 0.12 *measured in DCM (0.01 mg/mL; such a solution was used for photophysical measurements).

TABLE-US-00005 Layer Thickness Material 10 100 nm Al 9 2 nm Liq 8 20 nm NBPhen 7 10 nm HBM1 6 50 nm H.sup.B: EET-1: H.sub.scav: S.sup.B: 5 10 nm H.sup.P 4 10 nm TCTA 3 50 nm NPB 2 5 nm HAT-CN 1 50 nm ITO substrate glass

[2193] In order to evaluate the results of the invention, comparison experiments were performed, wherein solely the composition of the emission layer (6) was varied. Additionally, the ratio of EET-1 and S.sup.B was kept constant in the comparison experiments.

[2194] Results I: Variation of the Content of the Hole Scavenger H.sub.scav (Here Exemplarily a Phosphorescence Material P.sup.B) in the Light-Emitting Layer (Emission Layer, 6)

[2195] Composition of the light-emitting layer B of devices D1 to D4 (the percentages refer to weight percent):

TABLE-US-00006 Layer D1 D2 D3 D4 Emission H.sup.B (79%): H.sup.B (78%): H.sup.B (75%): H.sup.B (69%): layer EET-1 EET-1 EET-1 EET-1 (6) (20%): (20%): (20%): (20%): H.sub.scav (0%): H.sub.scav(1%): H.sub.scav (4%): H.sub.scav S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) (10%): S.sup.B (1%)

[2196] Setup 1 from Table 2 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), E.sup.B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-1 was used as the small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00007 Device results I Voltage at EQE at Relative FWHM λ.sub.max 10 mA/cm.sup.2 1000 cd/m.sup.2 lifetime LT95 Device [eV] [nm] CIEx CIEy [Volt] [%] at 1200 cd/m.sup.2 D1 0.17 530 0.31 0.64 5.53 21.0 1.00 D2 0.18 532 0.32 0.64 6.64 21.2 2.47 D3 0.20 532 0.34 0.62 7.41 18.1 1.21 D4 0.24 532 0.37 0.60 6.96 13.1 0.99

[2197] Comparing the device results, D1 and D2, similar optical properties (FWHM, λ.sub.max, CIEx and CIEy) and efficiency (EQE) can be observed, while for D2 an extension of the relative lifetime of 147% compared to D1 (from 1.00 to 2.47) can be observed. For D3 extension of the relative lifetime of 21% compared to D1 (from 1.00 to 1.21), while the relative lifetime of D4 decreased by 1% compared to D1 (from 1.00 to 0.99).

[2198] Results II: Variation of Composition of Components

[2199] Composition of the light-emitting layer B of devices D5 to D13 (the percentages refer to weight percent):

TABLE-US-00008 Layer D5 D6 D7 D8 Emission H.sup.B (79%): H.sup.B (76%): H.sup.B (78%): H.sup.B (75%): layer (6) H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): H.sub.scav H.sub.scav H.sub.scav H.sub.scav (1%): (4%): (1%): (4%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%)

TABLE-US-00009 Layer D9 D10 Emission H.sup.B H.sup.B layer (79.5%): (78.5%): (6) EET-1 EET-1 (20%): (20%): H.sub.scav (0%): H.sub.scav (1%): S.sup.B (0.5%) S.sup.B (0.5%)

[2200] Setup 1 from Table 2 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), H.sup.B-5 was used as host material H.sup.N, E.sup.B-11 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-1 was used as the small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

[2201] Devices D5 and D6 are typical phosphorescence devices, which include a mixed-host system, i.e., H.sup.B and H.sup.N, and a phosphorescence emitter.

[2202] Device D7 and D8 are devices, which include a mixed-host system, i.e., H.sup.B and H.sup.N, a phosphorescence material and a small FWHM emitter S.sup.B.

[2203] Device D9 is a device, which includes a host H.sup.B, a TADF material E.sup.B and a small FWHM emitter S.sup.B.

[2204] Devices D10 is a device, which includes a host H.sup.B, an excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), a hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and a small FWHM emitter S.sup.B.

TABLE-US-00010 Device results II Voltage at EQE at Relative FWHM λ.sub.max 10 mA/cm.sup.2 1000 cd/m.sup.2 lifetime LT95 Device [eV] [nm] CIEx CIEy [Volt] [%] at 1200 cd/m.sup.2 D5 0.31 512 0.30 0.62 6.11 19.5 1.00 D6 0.31 514 0.30 0.63 5.77 21.7 1.89 D7 0.17 534 0.33 0.64 6.33 19.9 2.05 D8 0.17 534 0.33 0.64 6.19 22.9 3.50 D9 0.17 532 0.31 0.63 5.86 20.6 1.30 D10 0.18 532 0.32 0.64 6.74 24.9 13.34

[2205] Comparing the composition of the emission layer of devices D5 and D6 to D7 and D8, D7 and D8 contain additionally a small FWHM emitter S.sup.B, which is not present in D5 and D6. A longer lifetime, similar efficiency and smaller FWHM of the emission can be observed for D7 and D8.

[2206] Device D10 according to the present invention shows a superior overall performance over D-9 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3).

[2207] Composition of the light-emitting layer B of devices D14 to D21 (the percentages refer to weight percent):

TABLE-US-00011 Layer D14 D15 D16 D17 D18 Emission H.sup.B (80%): H.sup.B (79%): H.sup.B (79%): H.sup.B (78%): H.sup.B (79%): layer (6) H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): EET-1 EET-1 EET-1 EET-1 EET-1 (20%): (0%): (20%): (0%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%) S.sup.B (0%) Layer D19 D20 D21 Emission H.sup.B (78%): H.sup.B (75%): H.sup.B (72%): layer (6) H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): EET-1 EET-1 EET-1 (20%): (20%): (20%): H.sub.scav (1%): : H.sub.scav (4%) H.sub.scav (7%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%)

[2208] Setup 1 from Table 2 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), H.sup.B-5 was used as host material H.sup.N, E.sup.B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), P.sup.B-2 was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00012 Device results III Voltage at EQE at Relative FWHM λ.sub.max 10 mA/cm.sup.2 1000 cd/m.sup.2 lifetime LT95 Device [eV] [nm] CIEx CIEy [Volt] [%] at 1200 cd/m.sup.2 D14 0.35 522 0.32 0.60 4.76 16.4 1.00 D15 0.29 516 0.30 0.63 6.49 22.7 0.29 D16 0.16 532 0.32 0.65 5.85 20.4 2.76 D17 0.17 532 0.31 0.65 6.60 22.4 0.52 D18 0.36 525 0.36 0.59 7.02 15.7 2.17 D19 0.17 532 0.33 0.64 7.28 20.4 4.75 D20 0.20 532 0.35 0.62 7.85 16.3 2.42 D21 0.20 534 0.36 0.61 7.26 13.6 2.57

[2209] As can be concluded from device results III, the absence of the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) results in an undesirably broad emission reflected by the FWHM values being significantly larger than 0.25 eV in all cases (see devices D14, D15, and D18). For D15, the very high EQE of 22.7% comes along with a significantly reduced lifetime. When using a small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) alongside an EET-1 (exemplarily a TADF material E.sup.B, specifically E.sup.B-10) or a hole scavenger H.sub.scav (here exemplarily an EET-2, specifically a phosphorescence material P.sup.B such as P.sup.B-2)), a narrow emission can be achieved, which is then reflected by the FWHM values being significantly smaller than 0.25 eV (see devices D16 and D17). At the same time, these devices exhibit high EQE-values of 20.4% and 22.4%, respectively. However, in terms of lifetime, all of these devices are clearly outcompeted by device D19, which was prepared according to the present invention. D19 also exhibits a very good efficiency (EQE of 20.4%) and a narrow emission (FWHM of 0.17 eV). In summary, the skilled artisan will acknowledge that D19 (according to the present invention) clearly shows the best overall device performance. The EML of D19 includes 1% of the hole scavenger H.sub.scav (here a phosphorescence material P.sup.B). Increasing this value to 4% (in D20) or even to 7% (in D21) results in a somewhat poorer device performance reflected by a slight increase of the FWHM to 0.20 eV, a reduction of the EQE to 16.3% or 13.6%, respectively, and a reduction of the device lifetime. Nevertheless, D20 and D21 still display a good overall performance, in particular with regard to the device lifetime.

[2210] In the absence of the excitation energy transfer component EET-1 (here exemplarily TADF material E.sup.B-10), an n-host (here exemplarily H.sup.B-5) was generally used to increase the electron mobility within the EML.

[2211] Composition of the light-emitting layer B of devices D22 to D29 (the percentages refer to weight percent):

TABLE-US-00013 Layer D22 D23 D24 D25 D26 Em- H.sup.B (80%): H.sup.B (79%): H.sup.B (78%): H.sup.B (78%): H.sup.B (78.5%): ission H.sup.N (0%): H.sup.N (20%): H.sup.N (20%): H.sup.N (0%): H.sup.N (0%): layer EET-1 EET-1 EET-1 EET-1 EET-1 (6) (20%): (0%): (0%): (20%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%) S.sup.B (0.5%) Layer D27 D28 D29 Emission H.sup.B (79.5%): H.sup.B (75%): H.sup.B (75.5%): layer (6) H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): EET-1 EET-1 EET-1 (20%): (20%): (20%): H.sub.scav (0%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0.5%) S.sup.B (1%) S.sup.B (0.5%)

[2212] Setup 1 from Table 2 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), H.sup.B-5 was used as host material H.sup.N, E.sup.B-11 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00014 Device results IV Voltage at EQE at Relative FWHM λ.sub.max 10 mA/cm.sup.2 1000 cd/m.sup.2 lifetime LT95 Device [eV] [nm] CIEx CIEy [Volt] [%] at 1200 cd/m.sup.2 D22 0.41 518 0.29 0.55 4.93 22.5 1.00 D23 0.31 512 0.30 0.62 6.11 19.5 1.10 D24 0.17 534 0.33 0.64 6.33 19.9 2.26 D25 0.17 534 0.32 0.64 6.30 22.5 11.89 D26 0.18 532 0.32 0.64 6.74 24.9 14.72 D27 0.17 532 0.31 0.63 5.86 20.6 1.44 D28 0.16 534 0.33 0.64 5.94 21.6 8.95 D29 0.18 532 0.32 0.64 6.75 22.6 11.40

[2213] As can be concluded from device results IV, using the TADF material E.sup.B (here exemplarily E.sup.B-11) or the phosphorescence material P.sup.B (here exemplarily Ir(ppy).sub.3) as the main emitter in the absence of a small FWHM emitter S.sup.B results in a relatively broad emission of the organic electroluminescent device, which is reflected by FWHM values of the main emission peak of clearly more than 0.25 eV (here 0.41 and 0.31 eV, respectively, see D22 and D23). Both, D22 and D23, exhibit high efficiencies (EQE of 22.5% and 19.5%, respectively). The addition of a small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) to for example the phosphorescent OLED D23 results in a significantly reduced FWHM of the main emission peak (then 0.17 eV) while slightly improving the EQE and the lifetime (see D24). However, device D24 as well as the OLEDs D22 and D23 are strongly outperformed by device D25, which was prepared according to the present invention. As compared to D22, D23, and D24, device D25 exhibits a dramatically prolonged lifetime, while still displaying an equally high efficiency and a narrow FWHM. The skilled artisan will acknowledge that the overall performance of device D25 according to the present invention is clearly superior to the performance of D22, D23, and D24. The overall device performance could be improved even further by reducing the content of the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) from 1% (in the EML of D25) to 0.5% (in the EML of D26). Again, a comparative example D27, not fulfilling the conditions of the present invention (exemplarily lacking the hole scavenger H.sub.scav, in this case EET-2, here a phosphorescence material P.sup.B) showed a drastically reduced lifetime and a somewhat reduced efficiency (EQE). Increasing the content of the hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B, Ir(ppy).sub.3) from 1% in the devices D25 and D26 according to the present invention to 4% (in devices D28 and D29 according to the present invention) led to a reduction of the device lifetime and the efficiency. However, these devices (D28 and D29) still clearly outperform the aforementioned comparative devices which were manufactured according to the state of the art and not according to the present invention. In the absence of the excitation energy transfer component EET-1 (here exemplarily the TADF material E.sup.B-11), an n-host (here exemplarily H.sup.B-5) was generally used to increase the electron mobility within the EML.

TABLE-US-00015 TABLE 3 Setup 2 of exemplary organic electroluminescent devices (OLEDs). Layer Thickness Material 10 100 nm Al 9 2 nm Liq 8 20 nm NBPhen 7 10 nm HBM1 6 50 nm H.sup.B: EET-1: H.sub.scav: S.sup.B 5 10 nm H.sup.P 4 10 nm TCTA 3 40 nm NPB 2 5 nm HAT-CN 1 50 nm ITO substrate glass
Composition of the light-emitting layer B of devices D30 to D32 (the percentages refer to weight percent):

TABLE-US-00016 Layer D30 D31 D32 Emission H.sup.B (79%): H.sup.B (76%): H.sup.B (75%): layer EET-1 EET-1 EET-1 (6) (20%): 20%): (20%): H.sub.scav (0%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (1%) S.sup.B (0%) S.sup.B (1%)

[2214] Setup 2 from Table 3 was used, wherein H.sup.B-1 (mCBP) was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), E.sup.B-14 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), P.sup.B-3 was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-14 was used as small FWHM emitter S.sup.B.

TABLE-US-00017 Device results V Voltage at EQE at Relative FWHM λ.sub.max 10 mA/cm.sup.2 1000 cd/m.sup.2 lifetime LT95 Device [eV] [nm] CIEx CIEy [Volt] [%] at 1200 cd/m.sup.2 D30 0.17 462 0.14 0.15 6.07 15.8 1.00 D31 0.33 474 0.14 0.23 5.61 16.8 2.50 D32 0.19 462 0.14 0.16 6.03 19.4 1.75

[2215] Among the organic electroluminescent devices D30-D32, D32 according to the present invention shows the best overall performance when taking the narrow emission (small FWHM), the high EQE, and the relative lifetime into account.

[2216] Composition of the light-emitting layer B of devices D33 to D35 (the percentages refer to weight percent):

TABLE-US-00018 Layer D33 D34 D35 Emission H.sup.P (79%): H.sup.P (79%): H.sup.P (78%): layer EET-1 EET-1 EET-1 (6) (20%): (20%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (1%) S.sup.B (0%) S.sup.B (1%)

[2217] Setup 2 from Table 3 was used, wherein H.sup.B-14 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), E.sup.B-14 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), P.sup.B-3 was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-14 was used as small FWHM emitter S.sup.B.

TABLE-US-00019 Device results VI Voltage at EQE at Relative FWHM λ.sub.max 10 mA/cm.sup.2 1000 cd/m.sup.2 lifetime LT95 Device [eV] [nm] CIEx CIEy [Volt] [%] at 1200 cd/m.sup.2 D33 0.17 462 0.14 0.15 5.26 17.2 1.00 D34 0.35 474 0.15 0.25 6.07 13.5 0.75 D35 0.18 462 0.14 0.15 5.89 18.1 1.50

[2218] Among the organic electroluminescent devices D33-D35, D35 according to the present invention clearly shows the best overall performance when taking the narrow emission (small FWHM), the high EQE, and the relative lifetime into account.

[2219] As stated before, each light-emitting layer B according to the present invention may be a single layer or may be composed of two or more sublayers. Exemplary organic electroluminescent devices with a light-emitting layer B including two or more sublayers are shown below (see device results VII and VIII).

TABLE-US-00020 TABLE 4 Setup 3 of exemplary organic electroluminescent devices (OLEDs). Layer Thickness Sublayers Material 10 100 nm single layer Al 9 2 nm single layer Liq 8 20 nm single layer NBPhen 7 10 nm single layer HBM1 6 2 nm sublayer 11 H.sup.B: 8 nm sublayer 10 EET-1: 2 nm sublayer 9 H.sub.scav: 8 nm sublayer 8 S.sup.B 2 nm sublayer 7 8 nm sublayer 6 2 nm sublayer 5 8 nm sublayer 4 2 nm sublayer 3 8 nm sublayer 2 2 nm sublayer 1 5 10 nm single layer H.sup.P 4 10 nm single layer TCTA 3 50 nm single layer NPB 2 5 nm single layer HAT-CN 1 50 nm single layer ITO substrate glass
Composition of the light-emitting layer B of devices D36 to D38 (the percentages refer to weight percent):

TABLE-US-00021 Layer Sublayer D36 D37 D38 Emission 11 H.sup.B (79%): H.sup.B (79%): H.sup.B (79%): layer H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): (6) S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) 10 H.sup.B (79%): H.sup.B (80%): H.sup.B (79%): H.sup.N (20%): EET-1 EET-1 H.sub.scav (1%) (20%): (20%): H.sub.scav (1%) 9 H.sup.B (79%): H.sup.B (79%): H.sup.B (79%): H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) 8 H.sup.B (79%): H.sup.B (80%): H.sup.B (79%): H.sup.N (20%): EET-1 EET-1 H.sub.scav (1%) (20%): (20%): H.sub.scav (1%) 7 H.sup.B (79%): H.sup.B (79%): H.sup.B (79%): H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) 6 H.sup.B (79%): H.sup.B (80%): H.sup.B (79%): H.sup.N (20%): EET-1 EET-1 H.sub.scav (1%) (20%): (20%): H.sub.scav (1%) 5 H.sup.B (79%): H.sup.B (79%): H.sup.B (79%): H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) 4 H.sup.B (79%): H.sup.B (80%): H.sup.B (79%): H.sup.N (20%): EET-1 EET-1 H.sub.scav (1%) (20%): (20%): H.sub.scav (1%) 3 H.sup.B (79%): H.sup.B (79%): H.sup.B (79%): H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) 2 H.sup.B (79%): H.sup.B (80%): H.sup.B (79%): H.sup.N (20%): EET-1 EET-1 H.sub.scav (1%) (20%): (20%): H.sub.scav (1%) 1 H.sup.B (79%): H.sup.B (79%): H.sup.B (79%): H.sup.N (20%): H.sup.N (20%): H.sup.N (20%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%)

[2220] Setup 3 from Table 4 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), H.sup.B-5 was used as host material H.sup.N, E.sup.B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-1 was used as small FWHM emitter S.sup.B.

TABLE-US-00022 Device results VII Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D36 0.24 528 0.29 0.64 5.08 23.8 1.00 D37 0.21 530 0.31 0.63 5.80 18.0 3.87 D38 0.23 530 0.33 0.62 7.71 16.3 9.01

[2221] As can be concluded from device results VII, D38 according to the present invention shows a significantly prolonged lifetime as compared to D36 and D37. This comes along with a somewhat reduced, but still high efficiency (EQE). All three devices display a narrow emission which is expressed by FWHM values below 0.25 eV in all cases. D38 displays the best overall device performance, when taking the narrow emission, the still high EQE and the very long lifetime into account.

TABLE-US-00023 TABLE 5 Setup 4 of exemplary organic electroluminescent devices (OLEDs). Layer Thickness Sublayers Material 10 100 nm single layer Al 9 2 nm single layer Liq 8 20 nm single layer NBPhen 7 10 nm single layer HBM1 6 5 nm sublayer 13 H.sup.B: 2 nm sublayer 12 EET-1: 5 nm sublayer 11 H.sub.scav: 2 nm sublayer 10 S.sup.B 5 nm sublayer 9 2 nm sublayer 8 5 nm sublayer 7 2 nm sublayer 6 5 nm sublayer 5 2 nm sublayer 4 5 nm sublayer 3 2 nm sublayer 2 5 nm sublayer 1 5 10 nm single layer H.sup.P 4 10 nm single layer TCTA 3 50 nm single layer NPB 2 5 nm single layer HAT-CN 1 50 nm single layer ITO substrate glass

[2222] Composition of the light-emitting layer B of device D39 (the percentages refer to weight percent):

TABLE-US-00024 Layer Sublayer D39 Emission 13 H.sup.B (79%): layer (6) EET-1 (20%): H.sub.scav (1%) 12 H.sup.B (79%): H.sup.N (20%): S.sup.B (1%) 11 H.sup.B (79%): EET-1 (20%): H.sub.scav (1%) 10 H.sup.B (79%): H.sup.N (20%): S.sup.B (1%) 9 H.sup.B (79%): EET-1 (20%): H.sub.scav (1%) 8 H.sup.B (79%): H.sup.N (20%): S.sup.B (1%) 7 H.sup.B (79%): EET-1 (20%): H.sub.scav (1%) 6 H.sup.B (79%): H.sup.N (20%): S.sup.B (1%) 5 H.sup.B (79%): EET-1 (20%): H.sub.scav (1%) 4 H.sup.B (79%): H.sup.N (20%): S.sup.B (1%) 3 H.sup.B (79%): EET-1 (20%): H.sub.scav (1%) 2 H.sup.B (79%): H.sup.N (20%): S.sup.B (1%) 1 H.sup.B (79%): EET-1 (20%): H.sub.scav (1%)

[2223] Setup 4 from Table 5 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), H.sup.B-5 was used as host material H.sup.N, E.sup.B-10 was used as excitation energy transfer component EET-1 (here exemplarily a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here exemplarily a phosphorescence material P.sup.B as EET-2), and S.sup.B-1 was used as small FWHM emitter S.sup.B.

TABLE-US-00025 Device results VIII Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D39 0.23 528 0.33 0.62 6.21 15.3 0.73* *The lifetime is given relative to D38.

[2224] As can be concluded from device results VIII, reducing the thickness of the H.sup.B:E.sup.B:H.sub.scav-sublayers from 8 nm (D38) to 5 nm (D39) while using a largely analogue stack architecture, did not result in an improved device performance. Nevertheless, D39 still displays a narrow emission, high EQE and good lifetime.

[2225] Composition of the light-emitting layer B of devices D40 and D41 (the percentages refer to weight percent):

TABLE-US-00026 Layer D40 D41 Emission H.sup.B (79%): H.sup.B (75%): E.sup.B (20%): E.sup.B (20%): layer (6) H.sub.scav (0%): H.sub.scav (4%): S.sup.B (1%) S.sup.B (1%)

[2226] Setup 1 from Table 2 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), E.sup.B-10 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3 was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00027 Device results IX Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D40 0.16 534 0.33 0.64 3.93 13.1 1.00 D41 0.18 534 0.35 0.63 5.09 12.9 3.02

[2227] As can be concluded from device results IX, device D41 according to the present invention shows a superior overall performance as compared to device D40 which lacks the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-10) when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

TABLE-US-00028 TABLE 6 Setup 5 of exemplary organic electroluminescent devices (OLEDs). Layer Thickness Material 10 100 nm Al 9 2 nm Liq 8 20 nm NBPhen 7 10 nm HBM1 6 50 nm H.sup.B: EET-1: H.sub.scav: S.sup.B 5 10 nm EBM1 4 10 nm TCTA 3 60 nm NPB 2 5 nm HAT-CN 1 50 nm ITO substrate glass

[2228] Composition of the light-emitting layer B of devices D42 to D44 (the percentages refer to weight percent):

TABLE-US-00029 Layer D42 D43 D44 Emission H.sup.B (79%): H.sup.B (78%): H.sup.B (78%): layer (6) H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): EET-1 EET-1 EET-1 (20%): (0%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (1%) S.sup.B (1%) S.sup.B (1%)

[2229] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), H.sup.B-5 was used as host material H.sup.N, E.sup.B-10 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), P.sup.B-2 was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00030 Device results X Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D42 0.18 532 0.33 0.64 3.81 14.4 1.00 D43 0.18 532 0.32 0.65 4.00 14.9 0.17 D44 0.18 534 0.33 0.64 4.31 14.8 1.77

[2230] As can be concluded from device results X, device D44 according to the present invention shows a superior overall performance as compared to device D43 which lacks the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-10) and device D42 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically P.sup.B-2) when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. In the absence of the TADF material E.sup.B-10, an n-host (here exemplarily H.sup.B-5) was used to increase the electron mobility within the EML.

[2231] Composition of the light-emitting layer B of devices D45 to D49 (the percentages refer to weight percent):

TABLE-US-00031 Layer D45 D46 D47 D48 D49 Emission H.sup.B (80%): H.sup.B (79%): H.sup.B (79%): H.sup.B (78%): H.sup.B (78%): layer (6) H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): EET-1 EET-1 EET-1 EET-1 EET-1 (20%): (0%): (20%): (0%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%) S.sup.B (1%)

[2232] Setup 1 from Table 2 was used, wherein H.sup.B-4 was used as host material H.sup.B (p-host H.sup.P; also used as material for the electron blocking layer 5), H.sup.B-5 was used as host material H.sup.N, E.sup.B-10 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), P.sup.B-4 was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00032 Device results XI Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D45 0.34 521 0.31 0.60 5.04 17.5 1.00 D46 0.25 522 0.32 0.63 5.91 27.0 0.72 D47 0.16 532 0.31 0.65 6.02 20.0 2.27 D48 0.17 531 0.32 0.65 6.56 22.5 0.64 D49 0.17 532 0.33 0.64 7.70 19.2 4.39

[2233] As can be concluded from device results XI, device D49 according to the present invention shows a superior overall performance as compared to device D48 which lacks the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-10) and device D47 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically P.sup.B-4) and device D46 which employs P.sup.B-4 as the emitter material in spite of S.sup.B-1 and device D45 which employs E.sup.B-10 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. In the absence of the TADF material E.sup.B-10, an n-host (here exemplarily H.sup.B-5) was used to increase the electron mobility within the EML.

[2234] Composition of the light-emitting layer B of devices D50 to D64 (the percentages refer to weight percent):

TABLE-US-00033 Layer D50 D51 D52 D53 D54 Emis- H.sup.B (80%): H.sup.B (79%): H.sup.B (79%): H.sup.B (78%): H.sup.B (78%): sion H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): layer EET-1 EET-1 EET-1 EET-1 EET-1 (6) (20%): (0%): (20%): (0%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) Layer D55 D56 D57 D58 D59 Emis- H.sup.B (75%): H.sup.B (75.5%): H.sup.B (72%): H.sup.B (72.5%): H.sup.B (65.5%): sion H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): layer EET-1 EET-1 EET-1 EET-1 EET-1 (6) (20%): (20%): (20%): (20%): (30%): H.sub.scav (4%): H.sub.scav (4%): H.sub.scav (7%): H.sub.scav (7%): H.sub.scav (4%): S.sup.B (1%) S.sup.B (0.5%) S.sup.B (1%) S.sup.B (0.5%) S.sup.B (0.5%) D60 D61 Emis- H.sup.B (55.5%): H.sup.B (67.5%): sion H.sup.N (0%): H.sup.N (0%): layer EET-1 EET-1 (6) (40%): (30%): H.sub.scav (4%): H.sub.scav (3%): S.sup.B (0.5%) S.sup.B (0.5%)

[2235] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), H.sup.B-5 was used as host material H.sup.N, E.sup.B-11 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00034 Device results XII Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D50 0.35 530 0.34 0.57 3.51 11.0 1.00 D51 0.28 508 0.27 0.63 3.85 18.7 0.47 D52 0.17 534 0.32 0.64 3.67 12.7 0.90 D53 0.16 532 0.31 0.65 3.83 14.5 0.84 D54 0.19 532 0.32 0.65 4.29 17.5 1.91 D55 0.16 534 0.33 0.64 4.71 20.2 6.72 D56 0.17 532 0.32 0.65 4.75 19.0 10.71 D57 0.17 534 0.33 0.64 4.70 18.3 6.18 D58 0.18 532 0.32 0.64 4.69 16.9 7.21 D59 0.19 532 0.33 0.64 4.54 18.7 14.51 D60 0.20 532 0.34 0.63 4.22 16.9 14.27 D61 0.21 532 0.34 0.63 4.54 18.0 17.15

[2236] As can be concluded from device results XII, device D54 according to the present invention shows a superior overall performance as compared to device D53 which lacks the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-11) and device D52 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3) and device D51 which employs Ir(ppy).sub.3, as the emitter material in spite of S.sup.B-1 and device D50 which employs E.sup.B-11 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. When comparing the performance of devices D55 to D58, it can be concluded that the reduction of the concentration of the small FWHM emitter (here exemplarily S.sup.B-1) in the EML from 1% to 0.5% may result in a prolonged device lifetime. Devices D59 to D61 were also prepared according to the present invention and, especially in comparison with D55 according to the present invention, indicate that increasing the concentration of the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-11) from 20% to 30% or even to 40% may result in an improved overall device performance. The comparison between the devices D55 to D58 and between D60 and D61 indicates that in contrast, a low concentration of the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3) is beneficial for the device performance. In the absence of the TADF material E.sup.B-11, an n-host (here exemplarily H.sup.B-5) was used to increase the electron mobility within the EML.

[2237] Composition of the light-emitting layer B of devices D62 to D71 (the percentages refer to weight percent):

TABLE-US-00035 Layer D62 D63 D64 D65 D66 Emis- H.sup.B (80%): H.sup.B (79%): H.sup.B (79%): H.sup.B (78%): H.sup.B (79%): sion H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): layer EET-1 EET-1 EET-1 EET-1 EET-1 (6) (20%): (0%): (20%): (0%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%) S.sup.B (0%) Layer D67 D68 D69 D70 D71 Emis- H.sup.B (78%): H.sup.B (75%): H.sup.B (67%): H.sup.B (57%): H.sup.B (47%): sion H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): layer EET-1 EET-1 EET-1 EET-1 EET-1 (6) (20%): (20%): (30%): (40%): (50%): H.sub.scav (1%): H.sub.scav (4%): H.sub.scav (2.5%): H.sub.scav (2.5%): H.sub.scav (2.5%): S.sup.B (1%) S.sup.B (1%) S.sup.B (0.5%) S.sup.B (0.5%) S.sup.B (0.5%)

[2238] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), H.sup.B-5 was used as host material H.sup.N, E.sup.B-11 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), P.sup.B-2 was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00036 Device results XIII Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D62 0.35 530 0.34 0.57 3.51 10.98 1.00 D63 0.28 516 0.30 0.63 3.94 21.33 2.47 D64 0.17 534 0.32 0.64 3.64 13.74 1.81 D65 0.17 534 0.32 0.65 3.96 19.87 3.76 D66 0.16 520 0.33 0.61 4.30 15.09 5.17 D67 0.17 534 0.33 0.64 4.35 20.89 9.59 D68 0.17 534 0.34 0.64 4.65 21.9 19.51 D69 0.20 532 0.34 0.63 4.56 19.3 23.18 D70 0.22 532 0.35 0.62 4.24 17.2 17.96 D71 0.24 532 0.36 0.61 3.96 14.6 8.61

[2239] As can be concluded from device results XIII, device D67 according to the present invention shows a superior overall performance as compared to device D66 which lacks the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) and device D65 which lacks the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-11) and device D64 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically P.sup.B-2) and device D63 which employs P.sup.B-2 as the emitter material in spite of S.sup.B-1 and device D62 which employs E.sup.B-11 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. When comparing the performance of devices D67 to D71, it can be concluded that for the given set of materials, a concentration of 30% of EET-1 (here E.sup.B-11) and 2.5% of H.sub.scav (here EET-2, more specifically P.sup.B-2) and of 0.5% of S.sup.B-1 afforded the best performing device (D69).

[2240] Composition of the light-emitting layer B of devices D72 to D79 (the percentages refer to weight percent):

TABLE-US-00037 Layer D72 D73 D74 D75 D76 Emission H.sup.B (80%): H.sup.B (79%): H.sup.B (79%): H.sup.B (78%): H.sup.B (78%): layer (6) H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): H.sup.N (20%): H.sup.N (0%): EET-1 EET-1 EET-1 EET-1 EET-1 (20%): (0%): (20%): (0%): (20%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (0%): H.sub.scav (1%): H.sub.scav (1%): S.sup.B (0%) S.sup.B (0%) S.sup.B (1%) S.sup.B (1%) S.sup.B (1%) Layer D77 D78 D79 Emission H.sup.B (78.5%): H.sup.B (75%): H.sup.B (75.5%): layer (6) H.sup.N (0%): H.sup.N (0%): H.sup.N (0%): EET-1 EET-1 EET-1 (20%): (20%): (20%): H.sub.scav (1%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0.5%) S.sup.B (1%) S.sup.B (0.5%)

[2241] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), H.sup.B-5 was used as host material H.sup.N, E.sup.B-11 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), P.sup.B-4 was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00038 Device results XIV Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D72 0.26 528 0.34 0.57 3.67 10.6 1.00 D73 0.24 520 0.30 0.64 4.36 25.0 0.54 D74 0.17 534 0.32 0.64 3.78 14.0 1.18 D75 0.16 532 0.32 0.65 4.39 13.2 0.57 D76 0.17 534 0.33 0.64 4.72 19.6 3.65 D77 0.18 530 0.32 0.64 4.66 19.8 7.29 D78 0.17 534 0.34 0.64 5.71 23.5 19.39 D79 0.19 530 0.33 0.64 5.57 22.6 35.59

[2242] As can be concluded from device results XIV, device D76 according to the present invention shows a superior overall performance as compared to device D75 which lacks the excitation energy transfer component EET-1 (here a TADF material E.sup.B, more specifically E.sup.B-11) and device D74 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically P.sup.B-4) and device D73 which employs P.sup.B-4 as the emitter material in spite of S.sup.B-1 and device D72 which employs E.sup.B-11 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account. When comparing the performance of devices D76 to D79, it can be concluded that the reduction of the concentration of the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) from 1% to 0.5% may improve the overall device performance.

[2243] Composition of the light-emitting layer B of devices D80 to D85 (the percentages refer to weight percent):

TABLE-US-00039 Layer D80 D81 D82 Emission H.sup.B (70%): H.sup.B (79.5%): H.sup.B (69.5%): layer (6) EET-1 EET-1 EET-1 (30%): (20%): (30%): H.sub.scav (0%): H.sub.scav (0%): H.sub.scav (0%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0.5%) Layer D83 D84 D85 Emission H.sup.B (66%): H.sup.B (75.5%): H.sup.B (65.5%): layer (6) EET-1 EET-1 EET-1 (30%): (20%): (30%): H.sub.scav (4%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0.5%)

[2244] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-15 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00040 Device results XV Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D80 0.41 532 0.35 0.57 3.43 10.2 1.00 D81 0.19 530 0.32 0.63 3.45 12.8 0.88 D82 0.19 530 0.32 0.63 3.44 12.3 1.50 D83 0.38 518 0.36 0.59 4.50 13.2 4.50 D84 0.19 532 0.32 0.64 4.81 18.3 5.12 D85 0.19 532 0.33 0.63 4.54 17.7 9.23

[2245] As can be concluded from device results XV, device D84 according to the present invention shows a superior overall performance as compared to device D81 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3). Furthermore, D85 according to the present invention shows a superior overall performance as compared to device D83 which lacks the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) and device D80 which employs E.sup.B-15 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

[2246] Composition of the light-emitting layer B of devices D86 to D90 (the percentages refer to weight percent):

TABLE-US-00041 Layer D86 D87 D88 Emission H.sup.B (70%): H.sup.B (79.5%): H.sup.B (69.5%): layer (6) EET-1 EET-1 EET-1 (30%): (20%): (30%): H.sub.scav (0%): H.sub.scav (0%): H.sub.scav (0%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0.5%) Layer D89 D90 Emission H.sup.B (75.5%): H.sup.B (65.5%): layer (6) EET-1 EET-1 (20%): (30%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0.5%) S.sup.B (0.5%)

[2247] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-15 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), P.sup.B-2 was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00042 Device results XVI Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D86 0.41 532 0.35 0.57 3.43 10.2 1.00 D87 0.19 530 0.32 0.63 3.45 12.8 0.55 D88 0.19 532 0.32 0.63 3.44 12.3 0.96 D89 0.19 532 0.32 0.64 5.14 19.0 1.98 D90 0.20 532 0.34 0.63 4.64 19.3 3.44

[2248] As can be concluded from device results XVI, devices D89 and D90 according to the present invention show a superior overall performance as compared to device D87 and D88 which lack the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically P.sup.B-2) and device D86 which employs E.sup.B-15 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

[2249] Composition of the light-emitting layer B of devices D91 to D94 (the percentages refer to weight percent):

TABLE-US-00043 Layer D91 D92 D93 D94 Emission H.sup.B (70%): H.sup.B (69.5%): H.sup.B (66%): H.sup.B (65.5%): layer (6) EET-1 EET-1 EET-1 EET-1 (30%): (30%): (30%): (30%): H.sub.scav (0%): H.sub.scav (0%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0%) S.sup.B (0.5%)

[2250] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-16 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00044 Device results XVII Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D91 0.33 518 0.30 0.61 3.08 19.4 1.00 D92 0.18 532 0.31 0.64 3.25 18.7 1.72 D93 0.33 520 0.33 0.61 3.61 20.6 7.61 D94 0.18 534 0.33 0.64 3.83 24.7 18.21

[2251] As can be concluded from device results XVII, device D94 according to the present invention shows a superior overall performance as compared to device D93 which lacks the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) and device D92 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3) and device D91 which employs E.sup.B-16 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

[2252] Composition of the light-emitting layer B of devices D91 to D94 (the percentages refer to weight percent):

TABLE-US-00045 Layer D95 D96 D97 Emission H.sup.B (69.5%): H.sup.B (66%): H.sup.B (65.5%): layer (6) EET-1 EET-1 EET-1 (30%): (30%): (30%): H.sub.scav (0%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0.5%) S.sup.B (0%) S.sup.B (0.5%)

[2253] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-17 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00046 Device results XVIII Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D95 0.20 532 0.33 0.63 3.64 11.3 1.00 D96 0.44 550 0.40 0.56 4.27 8.4 3.77 D97 0.24 534 0.37 0.61 4.42 13.5 4.49

[2254] As can be concluded from device results XVIII, device D97 according to the present invention shows a superior overall performance as compared to device D96 which lacks the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) and device D95 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3), when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

[2255] Composition of the light-emitting layer B of devices D98 to D101 (the percentages refer to weight percent):

TABLE-US-00047 Layer D98 D99 D100 D101 Emission H.sup.B (70%): H.sup.B (69.5%): H.sup.B (66%): H.sup.B (65.5%): layer (6) EET-1 EET-1 EET-1 EET-1 (30%): (30%): (30%): (30%): H.sub.scav (0%): H.sub.scav (0%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0%) S.sup.B (0.5%)

[2256] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-18 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00048 Device results XIX Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D98 0.40 535 0.37 0.57 3.68 8.7 1.00 D99 0.20 531 0.34 0.62 3.87 8.7 1.22 D100 0.43 546 0.39 0.57 4.52 9.8 5.85 D101 0.22 532 0.36 0.61 4.80 11.4 8.24

[2257] As can be concluded from device results XIX, device D101 according to the present invention shows a superior overall performance as compared to device D100 which lacks the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) and device D99 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3) and device D98 which employs E.sup.B-18 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

[2258] Composition of the light-emitting layer B of devices D102 to D105 (the percentages refer to weight percent):

TABLE-US-00049 Layer D102 D103 D104 D105 Emission H.sup.B (70%): H.sup.B (69.5%): H.sup.B (66%): H.sup.B (65.5%): layer (6) EET-1 EET-1 EET-1 EET-1 (30%): (30%): (30%): (30%): H.sub.scav (0%): H.sub.scav (0%): H.sub.scav (4%): H.sub.scav (4%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0%) S.sup.B (0.5%)

[2259] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-19 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00050 Device results XX Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D102 0.41 532 0.353 0.573 3.56 9.25 1.00 D103 0.19 531 0.324 0.631 3.64 12.31 1.70 D104 0.41 535 0.373 0.582 4.31 11.68 4.07 D105 0.20 532 0.339 0.628 4.51 16.97 8.31

[2260] As can be concluded from device results XX, device D105 according to the present invention shows a superior overall performance as compared to device D104 which lacks the small FWHM emitter S.sup.B (here exemplarily S.sup.B-1) and device D103 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3) and device D102 which employs E.sup.B-19 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

[2261] Composition of the light-emitting layer B of devices D106 to D108 (the percentages refer to weight percent):

TABLE-US-00051 Layer D106 D107 D108 Emission H.sup.B (70%): H.sup.B (69.5%): H.sup.B (65.5%): layer (6) EET-1 EET-1 EET-1 (30%): (30%): (30%): H.sub.scav (0%): H.sub.scav (0%): H.sub.scav (4%): S.sup.B (0%) S.sup.B (0.5%) S.sup.B (0.5%)

[2262] Setup 5 from Table 6 was used, wherein H.sup.B-15 was used as host material H.sup.B (p-host H.sup.P), E.sup.B-21 was used as excitation energy transfer component EET-1 (here a TADF material E.sup.B), Ir(ppy).sub.3, was used as hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B), and S.sup.B-1 was used as small FWHM emitter S.sup.B. A weight percentage of 0% means the absence of the material in the light-emitting layer B.

TABLE-US-00052 Device results XXI Relative EQE at lifetime Voltage at 1000 LT95 at FWHM λ.sub.max 10 mA/cm.sup.2 cd/m.sup.2 1200 Device [eV] [nm] CIEx CIEy [Volt] [%] cd/m.sup.2 D106 0.41 520 0.30 0.56 3.65 11.2 1.00 D107 0.18 528 0.29 0.63 3.61 12.4 1.69 D108 0.18 530 0.31 0.65 5.10 19.4 15.88

[2263] As can be concluded from device results XXI, device D108 according to the present invention shows a superior overall performance as compared to device D107 which lacks the hole scavenger H.sub.scav (here an excitation energy transfer component EET-2, more specifically a phosphorescence material P.sup.B, more specifically Ir(ppy).sub.3) and device D106 which employs E.sup.B-21 as the emitter material in spite of S.sup.B-1, when taking the narrow emission (FWHM), the efficiency (EQE), and the device lifetime (LT95) into account.

ORGANIC ELECTROLUMINESCENT DEVICE

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H10K85/60

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H10K71/164

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C09K2211/1011

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H10K85/6574

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C09K11/06

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H10K2101/25

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C09K2211/1018

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H10K85/6572

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C09K2211/1003

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C07B2200/05

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