NV CENTER-BASED MICROWAVE-FREE GALVANICALLY ISOLATED MAGNETOMETER

20230349989 · 2023-11-02

Assignee

Inventors

Cpc classification

International classification

Abstract

A scalar magnetometer includes a sensor element, a circuit carrier, a pump radiation source, a radiation receiver and evaluation means. The pump radiation source emits pump radiation. The sensor element preferably includes one or more NV centers in diamond as paramagnetic centers. This paramagnetic center emits fluorescence radiation when irradiated with pump radiation. The radiation receiver converts a intensity signal of the fluorescence radiation into a receiver output signal. The evaluation means detects and/or stores and/or transmits the value of the receiver output signal. The material of the circuit carrier is preferably transparent for the pump radiation in the radiation path between pump radiation source and sensor element and transparent for the fluorescence radiation in the radiation path between sensor element and radiation receiver. The components sensor element, pump radiation source, radiation receiver and evaluation means are preferably mechanically attached to the circuit carrier .

Claims

1-33. (canceled)

34. A quantum optical system comprising: at least one quantum dot, with one or more paramagnetic centers in one or more crystals and/or with at least one plurality of paramagnetic centers in one or more crystals and/or with one or more NV centers in one or more diamond crystals and/or with at least one plurality of NV centers in one or more diamond crystals and/or with one or more SiV centers in one or more diamond crystals and/or with one or more G centers in one or more silicon crystals, and at least one circuit carrier made of an optically transparent material, wherein the quantum dot can interact with an optical radiation, wherein the circuit carrier interacts with the quantum dot such that the circuit carrier acts as an optical functional element for at least a portion of the optical radiation that can interact or has interacted with the quantum dot, wherein the circuit carrier is equipped with electronic components, and wherein at least one lead of the circuit carrier is electrically connected to at least one terminal of at least one electronic and/or electrical component by soldering and/or electrically conductive bonding.

35. A module comprising: the quantum optical system according to claim 34; and a sensing element; wherein: the sensing element comprises at least the optical quantum dot, preferably the paramagnetic center; the quantum dot of the sensing element, when irradiated with a pump radiation having a pump radiation wavelength (λ.sub.pmp), emits a fluorescent radiation having a fluorescent radiation wavelength (λ.sub.fl); the fluorescent radiation wavelength (λ.sub.fl) depends on a value of another physical parameter at a location of the quantum dot, preferably at the location of a paramagnetic center; and the material of the circuit carrier is at least locally transparent to the pump radiation and/or that the material of the circuit carrier is transparent to the pump radiation.

36. The module according to claim 35, wherein at least one line is mechanically connected to the circuit carrier, such that the circuit carrier comprises at least this at least one line.

37. The module according to claim 35, wherein an intensity of the fluorescent radiation depends on the value of a magnetic flux density B and/or the value of another physical parameter at the location of the quantum dot, preferably the location of the paramagnetic center.

38. A magnetometer, comprising: the module according to claim 35; a pump radiation source; a radiation receiver; and an evaluation circuit, the evaluation circuit including one or more of a filter, a controller, an analog-to-digital converter, a signal processor, a data interface or a data bus; wherein the pump radiation source emits the pump radiation when electrically energized with an electrical pump current; wherein the radiation receiver is sensitive to the fluorescent radiation and converts an intensity of the fluorescent radiation into a receiver output signal; whereby the evaluation circuit is suitable and intended to detect and/or store and/or transmit the value of the receiver output signal (S0) as a measured value, wherein: one or both of following conditions, a) that the material of the circuit carrier is at least locally transparent for radiation with the pump radiation wavelength (λ.sub.pmp) of the pump radiation in a radiation path between the pump radiation source and the sensing element and the pump radiation of the pump radiation source passes this radiation path and/or b) that the material of the circuit carrier is at least locally transparent for radiation with the fluorescent radiation wavelength (λ.sub.fl) of the fluorescent radiation in the radiation path between the sensing element and the radiation receiver and the fluorescent radiation of the quantum dot, in particular of the paramagnetic center, of the sensing element passes this radiation path, is fulfilled and at least one or more or all of the following components: the sensing element, the pump radiation source, the radiation receiver, and the evaluation circuit, is/are mechanically attached to the circuit carrier.

39. A current sensor comprising: the module according to claim 35; and an electrical conductor; wherein the electrical conductor is arranged with respect to the sensing element such that an additional magnetic flux density B generated by an electric current flow in the electrical conductor can influence an intensity of the fluorescent radiation.

40. An energy supply facility; comprising: a power supply device comprising the module according to claim 35.

41. A battery sensor for monitoring the function of a battery, the battery sensor comprising: the module according to claim 35.

42. A power monitoring device comprising: an electrical conductor; at least a first current sensor according to the current sensor of claim 39; and a measured value evaluation device; wherein the electrical conductor has a first conductor position; wherein the electrical conductor has a second conductor position different from the first conductor position and spaced along an intended current flow in the electrical conductor; wherein the first current sensor determines the electrical current in the electrical conductor at the first conductor position in a form of a first measured value; wherein the second current sensor determines the electrical current in the electrical conductor at the second conductor position in the form of a second measured value; and wherein the measured value evaluation device compares the first measured value with the second measured value and forms and provides a comparison value and/or transmits it to a higher-level device.

43. The power monitoring device according to the claim 42, wherein the power monitoring device is a ground fault circuit interrupter or fuse.

44. The power monitoring device according to claim 42, wherein a subdevice comprises a neural network model and/or an HMM model.

45. A circuit carrier, wherein the circuit carrier is designed to be used in the quantum optical system according to claim 34; and/or wherein the circuit carrier is part of the quantum optical system according to claim 34; wherein: the circuit carrier is equipped with electronic components; at least one lead of the circuit carrier is electrically connected to at least one terminal of at least one electronic and/or electrical component by soldering and/or electrically conductive bonding; the circuit carrier is connected to a sensing element comprising the at least one quantum dot of the quantum optical system according to claim 34; and the circuit carrier interacts with the at least one quantum dot of the sensing element in such a way that the circuit carrier acts as an optical functional element for at least part of the optical radiation that can interact or has interacted with the at least one quantum dot of the sensing element.

46. The circuit carrier according to claim 45; in which the circuit carrier incorporates optical functional elements such as optical filters and/or Bragg filters, mirrors and/or mirror surfaces, lenses, especially micro-lenses, digital optical functional elements, diffractive optical functional elements, photonic crystals and photonic crystal structures, an optical or photonic grating, resonators, optical apertures, a wave sump, optical shields, a prism, a beam splitter, and/or a fiber optic cable.

47. A vehicle and/or flying vehicle and/or missile and/or projectile and/or surface or underwater vehicle and/or a surface or underwater floating body, hereinafter referred to as the vehicle, wherein the vehicle comprises a subsystem including a sensing element; and wherein the sensing element comprises a quantum dot, in particular a paramagnetic center in a crystal and/or in particular a plurality of paramagnetic centers and/or in particular a NV center in a diamond crystal and/or in particular a plurality of NV centers in a diamond crystal and/or in particular a SiV center in a diamond crystal and/or in particular a G center in a silicon crystal, and wherein the vehicle comprises the quantum optical system according to claim 34 as a subsystem; wherein the subsystem determines and/or outputs and/or transmits and/or provides a measured value which depends on a value of a physical parameter within the vehicle, in particular a magnetic flux density B and/or an electric field strength and/or a temperature and/or an orientation of the vehicle or a vehicle part and/or a speed of the vehicle or a vehicle part and/or an acceleration of the vehicle or a vehicle part, which acts on the sensing element.

48. A usage of the quantum optical system according to claim 34; wherein the usage is in an environment with technically induced ionizing particles and/or photon radiation, a radiation level in the unit of measurement Sv being more than 1000% above a normal radiation level in the unit of measurement Sv.

49. A device for a technical or medical use of ionizing radiation comprising the quantum optical system according to claim 34.

50. A receiver comprising a quantum optical system according to claim 34.

51. A method for measuring a magnetic flux density B or another physical parameter within a borehole or a geological search field, comprising: positioning of the quantum optical system according to claim 34 as a measurement system or part of a measurement system in the borehole; detecting a value of the magnetic flux density B or the value of the physical parameter at a location of a quantum point, preferably at a location of the paramagnetic center, of the measuring system as a determined measured value; and transferring or transporting the determined measured value to a surface.

52. A method of manufacturing an optical system of the quantum optical system according to claim 34 comprising: providing a system carrier with an interface; applying and/or gluing and/or laminating a first sheet onto the system carrier; structuring the first sheet to obtain a first sheet structure, wherein the structuring may occur before or after a step of applying, gluing, or laminating; and using the first sheet structure as an optical functional element; wherein the sheet has sensing elements with quantum dots in its sheet material.

53. A method of manufacturing a quantum optical system, comprising: providing a system carrier with an interface; applying, preferably dispensing, and/or printing a first glass frit paste onto the system carrier as a glass frit structure; wherein the glass frit paste comprises a quantum dot; melting the glass frit structure to a molten glass frit structure; solidification of the molten glass frit structure to a solidified glass frit structure; and using the solidified glass frit structure as an optical functional element wherein: the quantum optical system comprises at least one quantum dot, with one or more paramagnetic centers in one or more crystals and/or with at least one plurality of paramagnetic centers in one or more crystals and/or with one or more NV centers in one or more diamond crystals and/or with at least one plurality of NV centers in one or more diamond crystals and/or with one or more SiV centers in one or more diamond crystals and/or with one or more G centers in one or more silicon crystals; the quantum dot can interact with an optical radiation; a circuit carrier interacts with the quantum dot such that the circuit carrier acts as an optical functional element for at least a portion of the optical radiation that can interact or has interacted with the quantum dot; the circuit carrier is equipped with electronic components; and at least one lead of the circuit carrier is electrically connected to at least one terminal of at least one electronic and/or electrical component by soldering and/or electrically conductive bonding.

54. The method of claim 53, wherein the circuit carrier is made of an optically transparent material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[1005] The figures explain some, but not all, aspects of the proposal. They are provided for clarification. The applicable claims are decisive for the stressing. The figures are only individual examples that do not limit the claim.

[1006] FIG. 1 shows the basic structure of the magnetometer as a highly simplified block diagram.

[1007] FIG. 2 shows a cross-sectional view of a module whose function corresponds to the basic structure of an exemplary magnetometer shown in FIG. 1.

[1008] FIG. 3 shows a current sensor based on the module of FIG. 2.

[1009] FIG. 4 shows the block diagram of a magnetometer comprising optical feedback compensation.

[1010] FIG. 5 shows the block diagram of a magnetometer comprising a chopper stage.

[1011] FIG. 6 shows a cross-section of a module whose function corresponds to the structure of an exemplary magnetometer shown in FIG. 5.

[1012] FIG. 7 shows a current sensor based on the module of FIG. 6.

[1013] FIG. 8 shows a sensor element in an optical waveguide as the core of an electric coil for current measurement.

[1014] FIG. 9 shows a sensitivity curve for the change in intensity of fluorescence radiation (FL) as a function of magnetic flux density B.

[1015] FIGS. 10 to 18 show a method of manufacturing an optical module using a glass frit paste that is molten.

DETAILED DESCRIPTION OF THE DRAWINGS

FIG. 1

[1016] FIG. 1 shows the basic structure of the magnetometer as a highly simplified block diagram. The signal generator (G) in this simple example is a pump current source (I0), which cannot be modulated in this example. The pump current source (I0) generates the pump current (I.sub.pump) as a transmission signal (S5). The pump current (I.sub.pump) feeds the pump radiation source (PLED). The pump radiation source (PLED) emits pump radiation (LB) into a first transmission path (i1, not drawn). The intensity of the pump radiation (LB) typically depends on the transmission signal (S5). As a result, the pump radiation source (PLED) irradiates at least one area of the sensor element (NVD) using pump radiation (LB). The sensor element (NVD) emits fluorescence radiation (FL) depending on the pump radiation (LB). The intensity of the fluorescence radiation (FL) depends on the intensity of the pump radiation (LB) in the emission area of the fluorescence radiation (FL) and, if necessary, on other parameters, for example the magnitude of the magnetic flux density B, in this area. An optical filter (F1) preferably allows a portion of the fluorescence radiation (FL) sufficient for the measuring system to pass, while it does not allow a portion of the pump radiation (LB) sufficient for the measuring system to pass. As a result, essentially only the fluorescence radiation (FL) reaches the radiation receiver (PD) via a second transmission path (i2, not shown in FIG. 1). The radiation receiver (PD) converts the received intensity of the fluorescence radiation (FL) and possibly further received radiation into a receiver output signal (S0), the value of which represents the amount of radiation intensity received by the radiation receiver (PD). In the example of FIG. 1, a first amplifier (V1) amplifies the receiver output signal (S0) to a demodulated signal (S4). This name “demodulated signal” is chosen only because modulations will be added later.

[1017] In this example, an analog-to-digital converter (ADC) converts the demodulated signal (S4) into a digitized signal (DS). A data interface (IF) then enables access to this value via a data bus (DB).

FIG. 2

[1018] FIG. 2 shows a cross-sectional view of an exemplary module, the function of which corresponds to the basic structure of an exemplary magnetometer shown in FIG. 1. On an exemplary circuit carrier (GPCB), which is made of optically transparent glass, for example, on the upper side of the circuit carrier (GPCB) lines not shown here are applied, for example in thick-film technology, to which, for example, a microintegrated circuit (IC), the radiation receiver (PD) and the pump radiation source (PLED) are electrically and possibly also mechanically connected. The pump radiation source (PLED) irradiates a sensor element (NVD), which for example includes NV centers in diamond, using pump radiation (LB). Depending on the magnetic flux density B as an exemplary physical quantity, the NV centers of the sensor element (NVD) emit fluorescence radiation (FL). An optical filter (F1) ensures that no pump radiation (LB) enters the radiation receiver (PD). A housing (GH) ensures that potential other optical paths are interrupted. The housing (GH) preferably comprises black thermoset as the housing material. A mirror surface (ML) ensures that as much as possible of the pump radiation (LB) from the pump radiation source (PLED) reaches the sensor element (NVD) and that as much as possible of the fluorescence radiation (FL) reaches the radiation receiver (PD) to maximize the sensitivity of the system.

[1019] The sensor element (NVD) is preferably mounted on the other side of the circuit carrier (GPCB). This means that it is electrically isolated from the microintegrated circuit (IC) and the other electronic components (PLED, PD) on the upper side of the circuit carrier (GPCB).

[1020] A bias magnet (BM), which is typically a permanent magnet, is attached to the top of the circuit carrier (GPCB) here as an example to set the bias magnetic field. In FIG. 9 it can be seen later that, for example, a bias magnetic field of about 10mA is often very suitable for NV centers.

FIG. 3

[1021] FIG. 3 shows a current sensor based on the module of FIG. 2. The module of FIG. 2 is now supplemented by an electrical conductor (LTG). If a current flow takes place in the electrical conductor (LTG), this generates a magnetic flux density B, which influences the fluorescence radiation (FL) of the sensor element (NVD) and can therefore be measured and converted into a measured value and whose measured values can be passed on via the said data bus (DB), for example.

FIG. 4

[1022] FIG. 4 shows the block diagram of a magnetometer comprising optical feedback compensation. It is similar to FIG. 1, but now a second amplifier (V2) amplifies the demodulated signal (S4). The second amplifier (V2) provides the demodulated signal (S4) if necessary with an offset. The second amplifier (V2) generates the compensation transmission signal (S7) by means of the compensation current source (I1). The compensation transmission signal (S7) feeds the compensation radiation source (CLED) using a compensation transmission current (I.sub.comp). The compensation radiation source (CLED) also radiates into the radiation receiver (PD) via a third transmission path (I3, not shown here). Having a total intensity, the irradiation of the fluorescence radiation (FL) and the compensation radiation (CL) of the compensation radiation source (CLED) is preferably approximately summing. The instantaneous value of the receiver output signal (S0) of the radiation receiver (PD) depends on this instantaneous total intensity. Thus, the instantaneous value of the receiver output signal (S0) of the radiation receiver (PD) is also dependent on the intensity of the fluorescence radiation (FL) and the intensity of the compensation radiation (CL). The gains and signs in this control loop are thereby preferably selected in such a way that stability is achieved. This means that the total intensity is preferably constant, so that the physical conditions in the radiation receiver (PD) do not change even if the intensity of the fluorescence radiation (FL) changes, since a corresponding change in the intensity of the compensation radiation (CL) in the opposite direction compensates for this.

FIG. 5

[1023] FIG. 5 shows the block diagram of an exemplary magnetometer comprising an exemplary chopper stage. As in FIG. 4, the radiation receiver (PD) again receives the total intensity of the radiations, namely the fluorescence radiation (FL) of the sensor element (NVD) and the compensation radiation (CL). An optical filter (F1) again prevents pump radiation (LB) from reaching the radiation receiver (PD). The radiation receiver (PD) converts the value of the total radiation intensity to the instantaneous value of the receiver output signal (S0). A synchronous demodulator (SDM) converts the receiver output signal (S0) to the demodulated signal (S4) using the transmission signal (S5). A signal generator (G) preferably generates the transmission signal (S5). The transmission signal (S5) preferably has a frequency different from 0 Hz. In the example of FIG. 5, the exemplary synchronous demodulator (SDM) comprises a first multiplier (M1) which converts the receiver output signal (S0) into an instantaneous value of the multiplier output signal (S3) by multiplying the instantaneous value of the receiver output signal (S0) by the instantaneous value of the transmission signal (S5). An exemplary low-pass filter (TP) amplifies and filters the multiplier output signal (S3) to the demodulated signal (S4). Thus, the low-pass filter (TP) here has taken over the function of the first amplifier (V1) of FIG. 1 and FIG. 4. Preferably, the low-pass filter (TP) lets through essentially only a DC signal and no frequencies of the transmission signal (S5) and higher. Evaluation means (ADC, IF) which are no longer shown can then process the demodulated signal (S4) as shown in FIG. 4. A second multiplier (M2) multiplies the instantaneous value of the demodulated signal (S4) with the instantaneous value of the transmission signal (S5) to the instantaneous value of the compensation pre-signal (S6). If necessary, a second amplifier (V2) further amplifies the compensation pre-signal (S6) to the compensation transmission signal (S7) and typically provides it with an offset. The intensity of the compensation radiation (CL) emitted by the compensation radiation source (CLED) typically depends on the instantaneous value of the compensation transmission signal (S7). The intensity of the pump radiation (LB) emitted by the pump radiation source (PLED) typically depends on the instantaneous value of the transmission signal (S5). The gains and offsets in the control loop are preferably designed in such a way that stability is achieved essentially apart from control errors and system noise.

FIG. 6

[1024] FIG. 6 shows a cross-sectional view of a module which corresponds in its function to the structure of an exemplary magnetometer of FIG. 5. It corresponds to the module of FIG. 2. In contrast to FIG. 2, it now comprises the additional compensation radiation source (CLED) of FIGS. 4 and 5. A user of the technical teaching disclosed herein will preferably select the compensation radiation wavelength (λ.sub.ks) of the compensation radiation (CL) such that it can pass the optical filter (F1) in the example of FIG. 6. For example, if the pump radiation (LB) is green and the fluorescent radiation (FL) is red, for example, an infrared radiation may be useful as the compensation radiation (CL).

FIG. 7

[1025] FIG. 7 again shows a current sensor based on the module of FIG. 6. Analogous to FIG. 3, it again comprises the said electrical conductor (LTG).

FIG. 8

[1026] FIG. 8 shows a sensor element in an optical waveguide as the core of an electrical coil (L) for current measurement. The optical transmission paths of the systems shown above can also be designed completely or partially as optical waveguides (OFC). It may then be useful to wind a coil (L) as an electrical conductor (LTG) around the optical waveguide (LWL) and the sensor element (NVD) inserted in the optical waveguide (LWL) in order to maximize the magnetic flux density B.

FIG. 9

[1027] FIG. 9a shows an exemplary fluorescence curve for a sensor element comprising NV centers in diamond. FIG. 9b shows the corresponding sensitivity curve for the change in the intensity of the fluorescence radiation as a function of the magnetic flux density B.

FIGS. 10 to 18

[1028] FIGS. 10 to 18 show a method of manufacturing an optical module. The sequence of individual steps may be modified. Steps may be added to the process. Steps can be omitted if necessary and if it makes sense to do so.

FIG. 10

[1029] The exemplary method begins with the provision of a system carrier (GPCB) in FIG. 10. In the example of FIG. 10, the system carrier (GPCB) is optically opaque. It has a first exemplary optically transparent feedthrough (OV1) and a second exemplary optically transparent feedthrough (OV2) and a third exemplary optically transparent feedthrough (OV3), which allow later functional elements to communicate optically with the other side of the system carrier (GPCB).

FIG. 11

[1030] In the example shown here, the manufacturing device not shown applies a glass frit paste of glass dust and a carrier to the system carrier (GPCB) of FIG. 10. This application can use functionally equivalent materials from other substances (e.g., from salts). In this case, the application of the glass frit paste is carried out using stencil printing, for example. The sections of the glass frit paste printed in this way later form the first transmission path (i1) and the second transmission path (i2) and the third transmission path (i3).

FIG. 12

[1031] The manufacturing device, which is not drawn, applies a glass frit paste comprising ferromagnetic particles to the other side of the system carrier (GPCB), for example by means of stencil printing, onto the system carrier of FIG. 11. This glass frit paste, which comprises ferromagnetic particles, is later to form the bias magnet (BM), for example.

FIG. 13

[1032] On the system carrier (GPCB) of FIG. 12, the manufacturing device, which is not drawn, introduces a glass frit paste, for example by means of stencil printing, into the gap between the glass frit paste section, which will later constitute the second transmission path (i2), and the glass frit paste section, which will later constitute the first transmission path (i1). This glass frit paste may be interspersed with, for example, diamond microcrystals comprising high density NV centers. This new glass frit paste section will then later form the sensor element (NVD).

FIG. 14

[1033] The production device, which is not drawn, applies a glass frit paste, for example by means of stencil printing, to the system carrier (GPCB) of FIG. 13 in the gap between the glass frit paste section, which will later represent the second transmission path (i2), and the glass frit paste section located to the left of it. This glass frit paste can be interspersed with colored glass particles or a coloring salt, for example. This additional material is chosen in such a way that later this section no longer transmits pump radiation (LB) from the pump radiation source (PLED), but does transmit radiation having the fluorescence radiation wavelength (λ.sub.fl) of the fluorescence radiation (FL) from the sensor element (NVD). This new glass frit paste section will then later form the optical filter (F1).

FIG. 15

[1034] On the system carrier (GPCB) of FIG. 14, the manufacturing device, which is not drawn, introduces a glass frit paste, for example by means of stencil printing, into the gap between the glass frit paste section, which will later represent the third transmission path (i3), and the glass frit paste section located to the right of it. This glass frit paste can, for example, be interspersed with white colored glass particles or with particles of a different refractive index. This additional material then leads, in the exemplary case proposed here, to a scattering of the compensation radiation (CL) and the fluorescence radiation (FL) by these particles, so that this radiation can then later fall through the second exemplary optically transparent feedthrough (OV2) onto the radiation receiver (PD), which is not yet mounted here. This new glass frit paste section will later form an optical diffuser device (STR) in the beam path.

FIG. 16

[1035] Heat treatment of the system carrier (GPCB) of FIG. 15 melts and remelts the glass frit paste sections. They now preferably form a firm mechanical bond with the system carrier (GPCB).

FIG. 17

[1036] A printing technique preferably applies electrical leads (LT) to the system carrier (GPCB) of FIG. 16 using thick-film technology.

FIG. 18

[1037] An undrawn manufacturing device prints solder paste onto the system carrier (GPCB) of FIG. 17. An undrawn assembly device assembles the system carrier (GPCB) of FIG. 17 comprising electronic components (IC, CLED, PD, PLED). The system carrier is soldered, for example, in a soldering device not drawn, for example a reflow oven. The pump radiation source (PLED), for example a green LED, can now feed the pump radiation (LB), which is for example green, via the first exemplary optically transparent feedthrough (OV1) into the first transmission path (i1), which now acts as an optical waveguide (LWL) after melting. The pump radiation (LB) impinges on the sensor element (NVD), which here comprises NV centers as an example. The sensor element (NVD) functions here as a short optical waveguide (LWL) comprising active components, the NV centers. The sensor element (NVD) emits fluorescence radiation (FL) into the second transmission path (i2), into which pump radiation (LB) also enters and which also acts as an optical waveguide (LWL). Here, the optical filter (F1) acts as a wavelength-selective optical waveguide (LWL). Due to its coloring, the optical filter (F1) only allows fluorescence radiation (FL) to pass. The fluorescence radiation (FL) now enters another optical waveguide (LWL). On the other side, the compensating radiation source (CLED) radiates the compensation radiation (CL) into the third transmission link (i3) via the third exemplary optically transparent feedthrough (OV3). The compensation radiation (CL) enters the diffuser device (STR) via the third transmission path (i3), which acts as an optical waveguide (LWL) comprising a highly scattering material. The diffuser device (STR) scatters the compensation radiation (CL) toward the radiation receiver (PD) via the second exemplary optically transparent feedthrough (OV2). The diffuser device (STR) scatters the fluorescence radiation (FL) from the further optical waveguide (LWL) also via the second exemplary optically transparent feedthrough (OV2) towards the radiation receiver (PD), where the fluorescence radiation (FL) and the compensation radiation (CL) overlap. The radiation receiver (PD) receives the total radiation intensity from the intensity of the incident fluorescence radiation (FL) and incident compensation radiation (CL). For the rest, please refer to the description of the control circuits from here on.