N-TYPE CONDUCTIVE COMPOSITION COMPRISING A RIGID CONJUGATED POLYMER
20230340201 · 2023-10-26
Inventors
- Simone FABIANO (Norrköping, SE)
- Magnus BERGGREN (Norrköping, SE)
- Marc-Antoine STOECKEL (Norrköping, SE)
- Chi-Yuan YANG (Norrköping, SE)
Cpc classification
C09D11/102
CHEMISTRY; METALLURGY
International classification
C08G73/06
CHEMISTRY; METALLURGY
Abstract
The present invention relates to an n-type conductive composition comprising a rigid conjugated polymer having a dihedral angle from 0° to 20° and an n-type polymeric cation. Further, the present invention relates to an n-type conductive ink comprising such a composition.
Claims
1. An n-type conductive composition comprising a rigid conjugated polymer having a dihedral angle from 0° to 20° and an n-type polymeric cation.
2. The composition according to claim 1, wherein said rigid conjugated polymer is a conjugated ladder-type polymer.
3. The composition according to claim 2, wherein said conjugated ladder-type polymer is poly(benzimidazobenzophenanthroline) (BBL).
4. The composition according to claim 3, wherein said BBL comprises from 2 to 10000 repetitive units.
5. The composition according to claim 1, wherein said rigid conjugated polymer has lowest unoccupied molecular orbital (LUMO) energy level E.sub.LUMO below −3.9 eV.
6. The composition according to claim 1, wherein said n-type polymeric cation is poly(ethyleneimine) (PEI).
7. The composition according to claim 6, wherein said PEI is linear, branched or ethoxylated PEI and comprises from 2 to 10000 repetitive units.
8. The composition according to claim 1, wherein a mass ratio polymeric cation/(polymeric cation+rigid conjugated polymer) is from 0.01% to 99.99%.
9. The composition according to claim 1, wherein said composition has a conductivity of at least 10.sup.−3 S/cm.
10. The composition according to claim 1, wherein said composition is in the form of a thermally annealed thin film.
11. An n-type conductive ink comprising the composition according to claim 1, and a non-halogenated polar solvent.
12. The n-type conductive ink according to claim 11, wherein said non-halogenated polar solvent is a protic solvent.
13. The n-type conductive ink according to claim 11, wherein a concentration of said rigid conjugated polymer and said polymeric cation in said ink is from 0.005 to 500 g/l.
14. The n-type conductive ink according to claim 11, wherein said ink is processable through large-area techniques.
15. An organic optical or electronic device comprising the n-type conductive composition according to claim 1.
16. The n-type conductive ink according to claim 11, wherein a concentration of said rigid conjugated polymer and said polymeric cation in said ink is from 0.01 to 10 g/l, or from 0.05 to 1 g/l.
17. The composition according to claim 3, wherein said BBL comprises from 2 to 100 repetitive units or from 30 to 50 repetitive units.
18. The composition according to claim 6, wherein said PEI is linear, branched or ethoxylated PEI and comprises from from 5 to 1000 repetitive units or from 50 to 100 repetitive units.
19. The composition according to claim 1, wherein a mass ratio polymeric cation/(polymeric cation+rigid conjugated polymer) is from 0.1% to 90% or from 1% to 75% or from 20% to 50%.
20. The composition according to claim 1, wherein said composition has a conductivity of at least 1 S/cm.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] Embodiments of the invention will now be described by way of example with reference to the accompanying drawings, of which:
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DETAILED DESCRIPTION OF THE INVENTION
[0052] As mentioned above, the present invention provides an alcohol-based n-type conductive ink for printed electronics. In a particular embodiment that will be described in detail below, the n-type conductive ink is composed of the rigid conjugated ladder-type polymer poly(benzimidazobenzophenanthroline) (BBL) doped with poly(ethyleneimine) (PEI), an amine-based insulating polymer.
[0053] BBL (M.sub.w=60.5 kDa) was synthesized following the procedure described in the prior art (Arnold, F. E. & Deusen, R. L. V. Preparation and properties of high molecular weight, soluble oxobenz[de]imidazobenzimidazoisoquinoline ladder polymer. Macromolecules 2, 497-502 (1969)). Linear PEI (M.sub.n=2.5 kDa, PDI<1.3), branched PEI (M.sub.n=10 kDa, PDI=1.5), MSA, and ethanol were purchased from Sigma-Aldrich and used as received. PEDOT:PSS (Clevios PH1000) was purchased from Heraeus Holding GmbH.
[0054] The n-type conductive composition is prepared via the formulation of an ethanol-based BBL:PEI n-type conductive ink that is processable in air through simple spray-coating. After thermal activation, the n-type conductive composition comprising BBL:PEI, being in the form of a thin film shows an electrical conductivity as high as 8 S cm.sup.−1, as well as excellent thermal and ambient stability. It was also found that the high conductivity performance can be retained even after washing the thin films with common organic solvents, which is particularly important for the development of multi-stack optoelectronic devices. It has been demonstrated that the n-type conductive composition of the present invention may be used as a printed active layer in thermoelectric generators with record high power output of 11 μW/m K.sup.2.
[0055] While BBL is known to be only soluble in strong acids, such as methanesulfonic acid (MSA) or concentrated sulfuric acid, the n-type conductive ink is obtained through the dispersion of a BBL solution in MSA:TFA mixture into a large volume of ethanol under rapid stirring, leading to the formation of BBL nanoparticles to which PEI dissolved in ethanol is added to form the final conductive ink.
[0056] The BBL nanoparticles in a dispersion solution have a diameter of about 20 nm (
[0057] This ink according to the present invention can be used with large scale deposition methods, such as the spray-coating technique. Due to its nature the n-type conductive ink can be processed in air, and the low boiling point of ethanol does not necessitate any thermal treatment for drying. However, a thermal annealing under inert atmosphere is needed to activate the doping process.
[0058] The following Figures will describe various characteristics of the films obtained as follows. BBL:PEI thin films were fabricated by spray-casting in air, by means of a standard HD-130 air-brush (0.3 mm) with atomization air pressure of 2 bar. After spray-casting, the BBL:PEI thin films were annealed at 140° C. for 2 hours in N2 glove box or under vacuum to get the conducting film.
[0059] Electrical conductivity and Seebeck coefficient measurements were done in a nitrogen-filled glovebox using a Keithley 4200-SCS semiconductor characterization system. 3 nm of chromium as adhesive layer and 47 nm of gold where thermally evaporated on cleaned glass substrates, through a shadow mask, forming electrodes with a channel length/channel width of 30 μm/1000 μm for the electrical and 0.5 mm/15 mm for Seebeck coefficient characterizations.
[0060] The electrical conductivity of BBL:PEI thin films as a function of PEI content is reported in
[0061] Further, effect of film thickness on the electrical conductivity was studied. The results are shown in
[0062] This anisotropic conductivity is interpreted in terms of a percolating cluster model, developed for similar two-phase systems like PEDOT:PSS. The negatively charged BBL chains are preferentially ordered parallel to the substrate and are compensated by the long positively charged PEI chains, such that the latter are also expected to have a preferential order parallel to the substrate. This anisotropy favors the in-plane conductivity as also observed in the case of PEDOT:PSS.
[0063] It has been found that the n-type conductive composition of the present invention, in a particular embodiment comprising BBL:PEI, shows excellent ambient stability, with the conductivity of 12-μm-thick films decreasing less than 25% upon 24 hour exposure to air (
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[0065] Thermal stability of the n-type conductive composition of the present invention represented by BBL:PEI, was studied. The thermal stability is crucial for applications that require continuous operation at high temperatures (such as solar cells or thermoelectrics). Remarkably, no degradation of the electrical conductivity or Seebeck coefficient was observed even after annealing for 24 hours at 200° C. in inert atmosphere (see
[0066] Also, cycling the temperature between 20° C. and 100° C. did not show any sign of causing degradation even after 10 cycles (
[0067] Next, the ability of BBL:PEI to maintain the high conductivity performance after washing the thin films with common organic solvents was studied (
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[0069] Below, different applications of the n-type conductive composition according to the present invention will be described.
[0070] Thermoelectric generators (TEGs) had an in-plane geometry with one p/n-leg pair module prepared on a 25-μm-thick polyethylene naphthalate (PEN) substrate. For the p-leg, PEDOT:PSS (PH1000) was used, treated with DMSO (5% wt %). Considering the different electrical conductivity of secondary-doped PEDOT:PSS and BBL:PEI, the widths of the p/n legs were set to 2.5 mm/20 mm, respectively; the leg lengths and thicknesses were both 2.5 mm and 10 μm, respectively. First, the Cr/Au electrodes were evaporated to the PEN substrate through a shadow mask. Then, PEDOT:PSS and BBL:PEI legs were printed through spray-coating the relative dispersions in air. The samples were then annealed in nitrogen at 140° C., and followed by encapsulation with CYTOP. For TEGs with silver electrodes, the PEDOT:PSS and BBL:PEI legs were directly printed on PEN substrate in air, the silver paste was printed on the top of legs to form the electrodes. The samples were then annealed and encapsulated using the same method.
[0071] BBL:PEI presents maximum thermoelectric power factor over 11 μw m.sup.−1 K.sup.−2, with PEI content of 33% (
[0072] Finally, BBL:PEI has been tested as an n-type organic mixed ionic-electronic conductor in OECTs.
[0073] OECTs and ternary inverters were prepared as follows. OECTs had a lateral-gate geometry, and were fabricated on glass substrates (standard microscope glass). The substrates were washed by acetone, water, and isopropanol sequentially in ultrasonic bath and dried by nitrogen. Then, chromium/gold (5 nm/50 nm) were deposited on the substrates through shadow mask to form the source/drain electrodes with channel length L=30 μm, channel width W=1 mm. For n-type depletion mode OECT, a 50 nm-thick BBL:PEI channel and gate layer were spray-coated through shadow mask with gate size of 5 mm×5 mm. The samples were annealed in nitrogen at 140° C. for 2 h and finally a protection tape insulating layer were added. For the p-type depletion mode OECT, PEDOT:PSS (containing 1 wt % of (3-glycidyloxypropyl)trimethoxysilane and 5 wt % of ethylene glycol) was homogenized in ultrasonic bath for 30 min then spin-coated at 4000 rpm on the substrate. The PEDOT:PSS layer were patterned by protection tape to form the channel and gate (gate size of 5 mm×5 mm). The samples were annealed at 120° C. in air for 1 min and dipped into TAM52 ethanol solution (5-20 mg/mL) for 1 min. After annealing in nitrogen at 140° C. for 60 min, the samples were finally insulated by using a protection tape. For ternary inverter, one n-type OECT, one p-type OECT and four resistors (R1=820 kΩ and R2=330 kΩ,
[0074] Since BBL:PEI films are conductive in their pristine state, the resulting n-type OECTs operate in the depletion mode.
[0075] Note that, in analogy with PEDOT:PSS-based OECTs, BBL:PEI is used for both the channel and gate material. The source-drain current (I.sub.D) is high at zero gate voltage (V.sub.G) and decreases by 3 orders of magnitude when a negative voltage bias is applied to the gate. The maximum transconductance is 0.38 mS at V.sub.G=0 V. In addition, the device shows excellent cycling stability and fast response times of 167 ms and 11 ms for τ.sub.on and τ.sub.off, respectively (
[0076] In conclusion, it has been shown that the present invention provides a formulation of a polymeric ink that allows high n-type conductivity when processed through large-scale deposition method. The enhanced conductivity is attributed to a charge transfer mechanism occurring between the electron-rich amine in PEI to the acceptor polymer BBL, reaching a charge density up to 10.sup.20 cm.sup.−3 for the branched version. The n-type conductive composition of the present invention shows exceptional air and thermal stability, allowing it to be implemented in optoelectronic devices. For these purposes, the n-type conductive composition was used in a practical application such as OECT and record-breaking thermoelectric devices. The present invention provides the first example of an n-type depletion mode OECT device that was further integrated into a ternary logic inverter. Due to its remarkable characteristics, the unique ink of the present invention will unlock new potentials for all-organic optoelectronic and bioelectronic devices.
[0077] Although the present invention has been described with reference to various embodiments, those skilled in the art will recognize that changes may be made without departing from the scope of the invention. It is intended that the detailed description be regarded as illustrative and that the appended claims including all the equivalents are intended to define the scope of the invention.