Method for Production of LixSiyOz Coatings Using a Single Source for Li And Si and Resultant Coated Products
20230343934 · 2023-10-26
Inventors
- Malakhi NOKED (Tarum, D.N. Shimshon, IL)
- Yitzhak APELOIG (Haifa, IL)
- Yosi KRATISH (Haifa, IL)
- Dmitry BRAVO-ZHIVOTOVSKII (Haifa, IL)
- Rosy SHARMA (Ramat Gan, IL)
Cpc classification
H01M4/5825
ELECTRICITY
C01P2004/86
CHEMISTRY; METALLURGY
H01M4/525
ELECTRICITY
C01G53/50
CHEMISTRY; METALLURGY
H01M4/505
ELECTRICITY
C01P2002/90
CHEMISTRY; METALLURGY
C23C16/45531
CHEMISTRY; METALLURGY
H01M2004/021
ELECTRICITY
C23C16/45553
CHEMISTRY; METALLURGY
International classification
H01M4/36
ELECTRICITY
H01M4/58
ELECTRICITY
H01M4/505
ELECTRICITY
H01M4/525
ELECTRICITY
Abstract
Some exemplary embodiments of the invention relate to performing atomic layer deposition (ALD) or molecular layer deposition (MLD) of a volatile organo silyl lithium compound and ozone on a substrate. According to various exemplary embodiments of the invention the volatile organo silyl lithium compound includes SiLi.sub.2tBuMe and/or tBuMe.sub.2SiLi and/or tBuMe.sub.2SiNa and/or SiLi.sub.3Et and/or Alk.sub.3GeLi and/or [(Alk.sub.3Si).sub.4Al]Li and/or (NMe.sub.2)(tBu).sub.2SiLi and/or tBuMe.sub.2SiLi-TMEDA and/or SiLi+TMA.sub.2tBuMe. Resultant coated products and their uses are also disclosed.
Claims
1. A method comprising: performing atomic layer deposition (ALD) or molecular layer deposition (MLD) of at least one volatile organo silyl compound selected from the group consisting of tBuMe.sub.2SiLi, tBuMe.sub.2SiNa, Et.sub.3SiLi, Alk.sub.3GeLi, [(Alk.sub.3Si).sub.4Al]Li, (NMe.sub.2)(tBu).sub.2SiLi, tBuMe.sub.2SiLi-TMEDA and +tBuMe.sub.2SiLi+TMA and ozone on a substrate.
2. (canceled)
3. A method according to claim 1, wherein said volatile organo silyl compound comprises tBuMe.sub.2SiLi.
4. A method according to any one of claim 1, wherein said substrate comprises at least one item selected from the group consisting of an electrode material, a semiconductor material and a metal foil.
5. A method according to claim 4, wherein said electrode material comprises at least one item selected from the group consisting of 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2 (HE-NMC), LCO, NCM 622 (LiNi.sub.0.6Mn.sub.0.2Co.sub.0.20O.sub.2), NCM85(LiNi.sub.0.85Mn.sub.0.1Co.sub.0.05O.sub.2), LTO (Li.sub.2TiO.sub.3), TiO.sub.2, LNMO (LiNi.sub.0.5Mn.sub.1.5O.sub.4), NVPF (Na.sub.3V.sub.2(PO.sub.4).sub.2F.sub.3), and LNO (LiNiO.sub.2).
6. A method according to claim 5, wherein said substrate comprises 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2 (HE-NMC).
7. A method according to claim 4, wherein said semiconductor material comprises at least one item selected from the group consisting of Si wafers, TiO.sub.2 particles, TiO.sub.2 particles (Gd and S Doped with sufficient material to enhance ssNMR signal).
8. A method according to claim 4, wherein said metal foil comprises at least one item selected from the group consisting of copper (Cu) foil and Titanium (Ti) foil.
9. A method according to claim 1, wherein said ALD occurs in a vacuum reactor.
10. A method according to claim 1, wherein said volatile organo silyl compound is maintained at ≥145° C.
11. A method according to claim 9, wherein said vacuum reactor is maintained at a temperature of at least 75° C.
12. A method according to claim 1, comprising an ALD cycle including at least 0.025 sec pulse time for substrate followed by a at least 30 s dwell time and at least 0.01 s long ozone pulse with at least 30 sec dwell time.
13-14. (canceled)
15. An article of manufacture comprising: a substrate selected from the group consisting of 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2 (HE-NMC), LCO, NCM 622 (LiNi.sub.0.6Mn.sub.0.2Co.sub.0.20O.sub.2), NCM85(LiNi.sub.0.5Mn.sub.0.1Co.sub.0.05O.sub.2), LTO(Li.sub.2TiO.sub.3), TiO.sub.2 LNMO (LiNi.sub.0.5Mn.sub.1.5O.sub.4), NVPF (Na.sub.3V.sub.2(PO.sub.4).sub.2F.sub.3), LNO (LiNiO.sub.2), TiO.sub.2) particles (Gd and S doped), copper (Cu) foil and Titanium (Ti) foil coated with Li.sub.xSi.sub.yO.sub.z.
16. An article of manufacture according to claim 15, wherein said Li.sub.xSi.sub.yO.sub.z coating has a thickness of at least 2 nm.
17. An article of manufacture according to claim 15, wherein said Li.sub.xSi.sub.yO.sub.z coating has a thickness of 5 nm or less.
18. An article of manufacture according to claim 15, wherein said substrate comprises 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2 (HE-NMC).
19. An article of manufacture according to claim 15, exhibiting a peak at 102.18 eV in X-ray photoelectron spectroscopy (XPS).
20. An article of manufacture according to claim 15, exhibiting four silicon chemical environments at 17 ppm, −20 ppm, −60 ppm, and −110 ppm in direct dynamic nuclear polarization (DNP) spectra with CPMG detection.
21. An article of manufacture according to claim 15, exhibiting .sup.1H nuclei, at 33 ppm, 27 ppm, 20 ppm, and 1.85 ppm by indirect dynamic nuclear polarization (DNP).
22. (canceled)
23. A battery comprising an article of manufacture according to claim 15 as an electrode, showing no signs of structural disintegration after 100 charge/discharge cycles as analyzed by high-resolution scanning electron microscopy (HR-SEM).
24-28. (canceled)
29. A method for improving the electrochemical performance of a 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2 (HE-NMC) cathode, comprising creating a thin film layer thereon by ALD, using tBuMe.sub.2SiLi as a precursor of Li and Si.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE INVENTION
[0063] Embodiments of the invention relate to methods of Atomic Layer Deposition (ALD) which employ a single source for Li and Si and to resultant products. For purposes of this specification and the accompanying claims, the term “Atomic Layer Deposition” or “ALD” should be considered to include “Molecular layer deposition” or “MLD”. Specifically, some embodiments of the invention can be used to produce an Li.sub.xSi.sub.yO.sub.z coating on a substrate. The principles and operation of a method and/or article of manufacture according to exemplary embodiments of the invention may be better understood with reference to the drawings and accompanying descriptions.
[0064] Before explaining at least one embodiment of the invention in detail, it is to be understood that the invention is not limited in its application to the details set forth in the following description or exemplified by the Examples. The invention is capable of other embodiments or of being practiced or carried out in various ways. Also, it is to be understood that the phraseology and terminology employed herein is for the purpose of description and is not limiting.
[0065] Some exemplary embodiments of the invention relate to the use of ALD with a novel alkyl lithium silicate single source precursor, to coat 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2 (HE-NMC). These embodiments exhibit a remarkable efficacy of this coating phase in terms of its effect on a cathode's electrochemical performance. Further provided is an in depth characterization of the novel coating layer utilizing high sensitivity DNP-ssNMR, as well as electron microscopy and XPS, as well as a structural model for this radically new lithium-silicon based surface protection layer.
[0066] Exemplary Methods
[0067] Some exemplary embodiments of the invention relate to a method including performing atomic layer deposition (ALD) or molecular layer deposition (MLD) of a volatile organo silyl lithium compound and ozone on a substrate. According to various exemplary embodiments of the invention the volatile organo silyl lithium compound comprises tBuMe.sub.2SiLi and/or tBuMe.sub.2SiNa and/or SiLi.sub.3Et and/or Alk.sub.3GeLi and/or [(Alk.sub.3Si).sub.4Al]Li and/or (NMe.sub.2)(tBu).sub.2SiLi and/or tBuMe.sub.2SiLi-TMEDA and/or SiLi.sub.2tBuMe-+Plasma.sub.2 and/or tBuMe.sub.2SiLi+N TMA. For purposes of this specification and the accompanying claims, the term “alkyl” or “Alk” indicates a functional group that contains only carbon and hydrogen atoms, which are arranged in a straight chain or branched chain (e.g. tBu) with the general formula C.sub.nH.sub.2n+1.
[0068] In some exemplary embodiments of the invention, the volatile organo silyl lithium compound includes tBuMe.sub.2SiLi.
[0069] Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includes tBuMe.sub.2SiNa. Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includes SiLi.sub.3Et. Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includes Alk.sub.3GeLi. Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includes [(Alk.sub.3Si).sub.4Al]Li. Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includes (NMe.sub.2)(tBu).sub.2SiLi. Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includes tBuMe.sub.2SiLi-TMEDA.
[0070] Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound includeSiLi.sub.2tBuMe+TMA.
[0071] Alternatively or additionally, according to various exemplary embodiments of the invention the substrate includes at least one item selected from the group consisting of an electrode material, a semiconductor material and a metal foil.
[0072] According to various exemplary embodiments of the invention the electrode material includes 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC) and/or LCO and/or NCM 622 and/or NCM85 and/or LTO and/or TiO.sub.2 and/or LNMO and/or NVPF and/or LNO. In some embodiments the substrate includes 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC).
[0073] Alternatively or additionally, in some embodiments the substrate includes LCO.
[0074] Alternatively or additionally, in some embodiments the substrate includes NCM 622.
[0075] Alternatively or additionally, in some embodiments the substrate includes NCM85.
[0076] Alternatively or additionally, in some embodiments the substrate includes LTO. Alternatively or additionally, in some embodiments the substrate includes TiO.sub.2. Alternatively or additionally, in some embodiments the substrate includes LNMO. Alternatively or additionally, in some embodiments the substrate includes NVPF. Alternatively or additionally, in some embodiments the substrate includes LNO.
[0077] Alternatively or additionally, according to various exemplary embodiments of the invention the substrate comprises Si wafers and/or TIO.sub.2 particles and/or TiO.sub.2 particles (Gd and S Doped). According to some exemplary embodiments of the invention the substrate includes Si wafers. Alternatively or additionally, according to some exemplary embodiments of the invention the substrate includes TIO.sub.2 particles. Alternatively or additionally, according to some exemplary embodiments of the invention the substrate includes TiO.sub.2 particles (Gd and S Doped).
[0078] Alternatively or additionally, according to various exemplary embodiments of the invention the substrate comprises copper (Cu) foil and/or Titanium (Ti) foil. In some embodiments the substrate includes copper foil. Alternatively or additionally, in some embodiments the substrate includes titanium foil.
[0079] Alternatively or additionally, in some embodiments the ALD occurs in a vacuum reactor. Alternatively or additionally, in some embodiments the volatile organo silyl lithium compound is maintained at ≥145° C. Alternatively or additionally, in some embodiments the vacuum reactor is maintained at a temperature of at least 75° C., at least 80° C., at least 90° C., at least 100° C., at least 110° C., at least 120° C., at least 150° C., at least 200° C., at least 250° C., or intermediate or higher temperatures. Alternatively or additionally, according to various exemplary embodiments of the invention the vacuum reactor is maintained at a temperature of less than 300° C., less than 275° C., less than 250° C., less than 200° C., less than 100° C., less than 90° C. or intermediate or lower temperatures. Alternatively or additionally, in some embodiments the ALD cycle includes at least 0.025 sec pulse time for substrate followed by a at least 30 s dwell time and at least 0.01 s long ozone pulse with at least 30 sec dwell time. Alternatively or additionally, in some embodiments the method includes purging the reactor between ALD cycles. Alternatively or additionally, in some embodiments the method includes purging the reactor between volatile organo silyl lithium compound pulses and ozone pulses.
[0080] Exemplary Articles of Manufacture
[0081] In some exemplary embodiments of the invention there is provided an article of manufacture including a substrate coated with Li.sub.xSi.sub.yO.sub.z. In some exemplary embodiments of the invention, the coating has a thickness of at least 2 nm. Alternatively or additionally, in some embodiments the coating has a thickness of 5 nm or less. Alternatively or additionally, in some embodiments substrate includes 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC) and/or LCO, NCM 622 and/or NCM85 and/or LTO and/or TiO.sub.2 and/or LNMO and/or NVPF and/or LNO and/or Si wafers and/or TiO.sub.2 particles (Gd and S Doped) and/or copper (Cu) foil and/or Titanium (Ti) foil.
[0082] In some exemplary embodiments of the invention, the substrate includes 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC). Alternatively or additionally, in some embodiments the substrate includes LCO. Alternatively or additionally, in some embodiments the substrate includes NCM 622. Alternatively or additionally, in some embodiments the substrate includes NCM85. Alternatively or additionally, in some embodiments the substrate includes LTO. Alternatively or additionally, in some embodiments the substrate includes TiO.sub.2. Alternatively or additionally, in some embodiments the substrate includes LNMO. Alternatively or additionally, in some embodiments the substrate includes NVPF. Alternatively or additionally, in some embodiments the substrate includes LNO. Alternatively or additionally, in some embodiments the substrate includes Si wafers. Alternatively or additionally, in some embodiments the substrate includes TiO.sub.2 particles (Gd and S Doped). Alternatively or additionally, in some embodiments the substrate includes copper (Cu) foil. Alternatively or additionally, in some embodiments the substrate includes titanium (Ti) foil.
[0083] Alternatively or additionally, in some embodiments the article of manufacture exhibits a peak at 102.18 eV in X-ray photoelectron spectroscopy (XPS). Alternatively or additionally, in some embodiments the article of manufacture exhibits four silicon environments at 17 ppm, −20 ppm, −60 ppm, and −110 ppm in direct dynamic nuclear polarization (DNP) spectra with CPMG detection. Alternatively or additionally, in some embodiments the article of manufacture exhibits .sup.1H nuclei, at 33 ppm, 27 ppm, 20 ppm, and 1.85 ppm by indirect dynamic nuclear polarization (DNP).
[0084] In some exemplary embodiments of the invention there is provided a battery including an article of manufacture as described above as an electrode. In some exemplary embodiments of the invention, the electrode of the battery shows no signs of structural disintegration after 100 charge/discharge cycles as analyzed by high-resolution scanning electron microscopy (HR-SEM).
[0085] Exemplary Uses
[0086] Some exemplary embodiments of the invention relate to use of a volatile organo silyl lithium compound as a single source ALD precursor. Single source, as used here means that the compound provides both Li and Si. In some embodiments the single source for Li and Si is tBuMe.sub.2SiLi. In some embodiments the use is applied to generating an atomic layer deposition of a Li.sub.xSi.sub.yO.sub.z thin film. In some embodiments ALD is used to coat 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC). In some exemplary embodiments of the invention, a cathode based on 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC) coated with a thin layer of Li.sub.xSi.sub.yO.sub.z is provided. In some embodiments coating is affected using tBuMe.sub.2SiLi as an ALD precursor.
[0087] Alternatively or additionally, in some embodiments a method for improving the electrochemical performance of a 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC) cathode is provided. The method includes creating a thin film layer thereon by ALD, using tBuMe.sub.2SiLi as a precursor of Li and Si.
Experimental Procedures
[0088] ALD Treatment Procedure
[0089] The Li-rich material, 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC) was used as substrate electrode material. Atomic layer deposition (ALD) was performed using a laboratory synthesized, volatile organo silyl lithium compound (tBuMe.sub.2SiLi), ozone and the HE-NMC material in a custom made, particle coating unit inside the Ultratech savannah 200 ALD vacuum reactor. The precursor and the reactor temperature were maintained at 145° C. and 250° C. respectively. Argon was used as a carrier gas. Base pressure of the reactor was 0.06 Torr and a base process pressure of 0.14 Torr was maintained via Ar (Maxima) gas flow. One ALD cycle consists of 0.025 sec pulse time for tBuMe.sub.2SiLi followed by a 30 s dwell time and 0.01 s long ozone pulse with 30 sec dwell time. The reactor was purged for 15 sec in between the alternating pulses.
[0090] According to various exemplary embodiments of the invention the substrate includes at least one member of the group consisting of 0.35Li.sub.2MnO.sub.3.Math.0.65LiNi.sub.0.35Mn.sub.0.45Co.sub.0.20O.sub.2(HE-NMC), LCO, NCM 622, NCM85, LTO, TiO.sub.2, LNMO, NVPF, LNO, Si wafers, TiO.sub.2 particles (Gd and S Doped), TiO.sub.2 particles copper (Cu) foil and Titanium (Ti) foil. Alternatively or additionally, in various exemplary embodiments of the invention the volatile organo silyl lithium compound includes at least one member of the group consisting of SiLi.sub.2etBuM, tBuMe.sub.2SiNa, SiLi.sub.3Et, Alk.sub.3GeLi, [(Alk.sub.3Si).sub.4Al]Li, (NMe.sub.2)(tBu).sub.2SiLi, tBuMe.sub.2SiLi-TMEDA and SiLi.sub.2tBuMe+AlMe.sub.3 (TMA). Alternatively or additionally, according to various exemplary embodiments of the invention ozone and/or nitrogen plasma and/or water are applied to a selected substrate in alternating pulses with a selected organo silyl lithium compound.
[0091] Characterization Techniques
[0092] XPS was carried out using Kratos Analytical (England) AXIS-Ultra DLD with monochromic Al Kα (1486.6 eV) X-ray beam radiation. The binding energy of adventitious carbon at 285.0 eV was taken as an energy reference for all the measured peaks. HR-TEM examinations were carried out with a W-200 KV JEOL JEM-2100 transmission electron microscope operated at 200 kV. Specimen of coated and uncoated powders were suspended in isopropyl alcohol and then dried under vacuum at RT. HR-TEM images were collected from various particles in the samples.
[0093] STEM examinations were carried out with a FEI TITAN transmission electron microscope operated at 300 kV. Images and EDS profiles were collected from various particles in the samples.
[0094] Electrochemical Measurements
[0095] Composite electrodes were prepared by coating slurry with a composition of 80% HENMC, 5% Super P carbon black, 5% KS 6 graphite, and 10% PVDF solution in NMP, over Al foil. The electrode loading of ˜3 mg.Math.cm.sup.−2 was achieved. Coin cells of 2032-type were assembled with Li-metal counter electrodes (ø14 mm), two Celgard 2500 polypropylene separator (ø19 mm), and 1 M LiPF.sub.6 solution in 3:7 ethylene carbonate: ethyl methyl carbonate (LP57). All cells were subjected to electrochemical cycling at 30° C. Currents for C-rates were calculated considering the specific capacity of HE-NMC as 250 mAhg.sup.−1. The electrochemical measurements were carried out using BCS-805 battery cycler (Bio-logic Science instruments) in a potential window of 2.0 V-4.7 V. The first charge-discharge was carried out at C/15 with 4.7 V as the cut off voltage. Further cycling was carried out at different C-rate with upper cut off voltage of 4.6 V.
[0096] Analysis of evolving gases during the charge discharge cycles was achieved using in-operando online electrochemical mass spectrometer (OEMS) (Hiden Analytical). Cells for the OEMS measurement were assembled inside Ar filled glovebox with HE-NMC as cathode (o 12 mm), Li as anode (ø14 mm), and 200 μL LP57 as electrolyte solution. Two polypropylene separators (ø29 mm) were placed between cathode and anode. The cell was then taken out of the glove box and was connected to OEMS capillary using one of the Swagelok valves located at the head part of the cell. The electrochemical measurements were carried out using VSP— potentiostat (Bio-logic Science instruments) in a potential window of 4.7-2V at different C rates. The variation of desired gases with time was investigated using Mid mode.
[0097] Dynamic Nuclear Polarization (DNP)
[0098] Detection of thin surface layers which are impossible to detect with ssNMR due to its limited sensitivity is feasible using dynamic nuclear polarization (DNP) using exogenous nitroxide biradicals (TEKPol). The experimental approach for DNP is schematically depicted and explained in a paper co-authored by the inventors (Rosy et al. Energy Storage Materials 33 (2020) 268-275; fully incorporated herein by reference). Rosy et al. demonstrate that high sensitivity of DNP facilitates acquisition of .sup.7Li as well as .sup.29Si and .sup.13C spectra at natural isotopic abundance and determination of the local environments in the coating layer. Rosy et al. also demonstrate that detection of the Si species in the coating is enabled by DNP.
Example 1
Characterizations of ACEI: Morphology and Composition Analysis
[0099] Precursor Characterizations
[0100] Surface Analysis Using HR-TEM and XPS
[0101] In order to examine the coating conformality, coverage and effects on the surface of the HENMC material HR-TEM analysis was performed. A thickness of 2-5 nm was observed on all particles. The coating shown in
[0102]
[0103]
[0104] In
[0105] Energy Dispersive X-ray Spectroscopy (EDS) is an analytical technique equipped in the HR-TEM instrument to detect elements present on the surface of the sample. The results show the presence of Si, Al or N in the coated sample.
[0106] Composition of the deposited film was next investigated using X-ray photoelectron spectroscopy (XPS). The presence of Si was confirmed by the existence of peak at 102.18 eV in the Si 2p spectra (
[0107] Interestingly, the Ni 2p peak in the coated sample exhibited a negative shift of 0.17 eV (
[0108] Direct DNP spectra with CPMG detection in Rosy et al. reveals four silicon environments at 17, −20, −60, and −110 ppm. These resonances were assigned to different alkylated silicon groups, R.sub.3SiO—R′, R.sub.2Si(OSi).sub.2, RSi(OSi).sub.3 and Si(OSi).sub.4, respectively (R=alkyl group and R′=alkyl or OH). Polarization transfer through the .sup.1H nuclei, resulted in .sup.29Si signal enhancement of 53 and increased contribution of the double and mono alkylated (−20 and −60 ppm, respectively) silicon resonances. This enhancement suggests these moieties are located on the outer surface of the coating, making them easily accessible to polarization transfer from the radicals and the solvent. The amorphous silica group, resonating at −110 ppm is most likely located at the interface between the alkylated silicon groups and the TiO.sub.2 substrate. Its low contribution suggests it is a thin layer further away from the radical's solution.
[0109] Rosy et al. reports that four .sup.13C resonances were detected by indirect DNP from .sup.1H nuclei, at 33, 27, 20 and 1.85 ppm. These were assigned to the carbons in the t-butyl and methyl groups (CH.sub.3—C—Si- and CH.sub.3—Si-groups). Finally, .sup.7Li species in the coating were detected through direct DNP and could also be detected in .sup.1H-.sup.7Li CP experiment, but only when μwaves were used. This suggests that Li sites are distributed throughout the coating layer and are exposed to the solvent.
Example 2
Electrochemical Investigations
[0110] The comparative galvanostatic charge/discharge profile for the first and 100th cycle corresponding to both pristine and Li.sub.xSi.sub.yO.sub.z coated HE-NMC electrodes are presented in
[0111] From the voltage profile of the first cycle (
[0112] Further details on the Li intercalation/de-intercalation were obtained by plotting dQ/dV plots.
[0113] Furthermore, the shift of peak 4 and 5 to higher potentials in case of coated samples indicates the facilitated insertion of lithium in both TM and Li.sup.+ layer. The sustained enhancement of the peak intensity with well-preserved peak shapes even after 50th (
[0114] The improved specific capacity, lower voltage hysteresis, and, faster intercalation/deintercalation kinetics of the coated sample as concluded from the above discussed electrochemical studies, hints towards the improvements in the rate capabilities.
Example 3
Performance of Coated Sample as a Function of Increasing Current Densities
[0115] To further support the inferences obtained from the preliminary electrochemical data, the performance of the coated sample was studied as a function of increasing current densities (C-Rate).
Example 4
Structural and Morphological Changes
[0116] In order to elucidate a clear picture of the structural and morphological changes, a post-mortem analysis of the cycled electrodes carried out, exploiting the high-resolution scanning electron microscopy (HR-SEM). HR-SEM micrographs of the pristine electrodes after 50th cycle are presented in
Example 5
Gas Evolution
[0117] Building on the previous reports, the structural breakdown of the spherical particles (as observed from the HR-SEM images) can be ascribed to the evolution of gaseous species from HE-NMC during battery charging. The well-preserved morphology of the particles in the coated samples indicate towards the reduced strain which can be related to the lower gaseous evolution. Therefore, an in-operando analysis of the gases evolved during cycling carried out using online electrochemical mass spectrometry (OEMS) and the evolution from both the coated and uncoated sample was compared. The comparative evolution profiles for O.sub.2 (
[0118] As will be apparent to the skilled person from the foregoing, the application of volatile organo silyl lithium compound as an unconventional, single source ALD precursor has been demonstrated. Using tBuMe.sub.2SiLi as a single source for Li and Si, the invention provides a simple and facile protocol for the atomic layer deposition of Li.sub.xSi.sub.yO.sub.z thin film. Utilizing the high sensitivity of DNP-ssNMR technique, an in-depth chemical and structural characterization of 2-5 nm thin Li.sub.xSi.sub.yO.sub.z film was carried out, thereby evidencing the utility of this technique. In addition, with the electrochemical and spectroscopic evidences, the application of Li.sub.xSi.sub.yO.sub.z thin film as a cathode protection layer for HE-NMC was shown, which not only serve as a helping hand in mitigating the structural and chemical degradation but also improves the battery kinetics. In contrast to conventional coating, the Li.sub.xSi.sub.yO.sub.z thin film substantially outperforms the pristine material at faster lithiation/dilithiation rates by demonstrating ˜40% higher capacity at 4 C in comparison to the uncoated material.
Example 6
Coated Particles of HENCM and TiO.SUB.2
[0119] In order to demonstrate the applicability of ALD to coating semiconductor materials the ALD treatment procedure presented above was applied to HE-NMC and TiO.sub.2 particles.
[0120]
[0121] These results show that HE-NMC and TiO.sub.2 are suitable substrates for additional embodiments of the invention using a variety of coating materials as described hereinabove.
Example 7
tBuMe.SUB.2.SiLi Used to Deposit Lithiated Silicon Nitrides on Ti Foil
[0122] In order to demonstrate the applicability of ALD to coating metal foils, the ALD treatment procedure presented above was used to apply tBuMe.sub.2SiLi to Ti foil.
[0123]
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[0125] These results show that tBuMe.sub.2SiLi is a suitable coating material and/or that Ti foil is a suitable substrate for additional embodiments of the invention. Alternatively or additionally, these results show that ALD with tBuMe.sub.2SiLi can result in Lithiated Silicon Nitrides by reacting with N.sub.2 plasma. This is believed to be a new reaction.
Example 8
Use of tBuMe.SUB.2.SiNa to Deposit Na.SUB.x.Si.SUB.y.O.SUB.z .On HE-NMC
[0126] In order to further demonstrate the wide applicability of the ALD treatment procedure presented above, the procedure was used to apply tBuMe.sub.2SiNa to HE-NMC.
[0127]
[0128] These results show that tBuMe.sub.2SiNa is a suitable coating material. The fact that it coats HE-NMC suggests that it can be used to coat other substrates.
Example 9
Use of Alk.SUB.3.GeLi to Deposit Li.SUB.x.Ge.SUB.y.O.SUB.z .on HE-NMC
[0129] In order to further demonstrate the wide applicability of the ALD treatment procedure presented above, the procedure was used to apply Alk.sub.3GeLi to HE-NMC.
[0130]
[0131] These results show that Alk.sub.3GeLi is a suitable coating material. The fact that it coats HE-NMC suggests that it can be used to coat other substrates.
Example 10
Use of [(Alk.SUB.3.Si).SUB.4.Al]Li to Deposit Li.SUB.x.Si.SUB.y.O.SUB.z.—Al.SUB.w .on TiO.SUB.2
[0132] In order to further demonstrate the wide applicability of the ALD treatment procedure presented above, the procedure was used to apply [(Alk.sub.3Si).sub.4Al]Li to TiO.sub.2.
[0133]
[0134] These results show that [(Alk.sub.3Si).sub.4Al]Li is a suitable coating material. This is interesting because this trifunctional precursor can act as a source of three elements, Li, Si and Al. The fact that [(Alk.sub.3Si).sub.4Al]Li coats TiO.sub.2 suggests that it can be used to coat other substrates.
Example 11
Use of (NMe.SUB.2.)(tBu).SUB.2.SiLi to Deposit Li.SUB.x.Si.SUB.y.O.SUB.z.—N, on Gd and S Doped TiO.SUB.2
[0135] In order to further demonstrate the wide applicability of the ALD treatment procedure presented above, the procedure was used to apply (NMe.sub.2)(tBu).sub.2SiLi to Gd and S doped TiO.sub.2.
[0136]
[0137]
[0138]
[0139] These results show that (NMe.sub.2)(tBu).sub.2SiLi is a suitable coating material. This is interesting because this trifunctional precursor can act as a source of three elements, Li, Si and N. The fact that (NMe.sub.2)(tBu).sub.2SiLi coats Gd and S doped TiO.sub.2 suggests that it can be used to coat other substrates.
Example 12
tBuMe.SUB.2.SiLi-TMEDA Coated Gd and S Doped TiO.SUB.2
[0140] In order to further demonstrate the wide applicability of the ALD treatment procedure presented above, the procedure was used to apply tBuMe.sub.2SiLi-TMEDA to Gd and S doped TiO.sub.2.
[0141]
[0142]
[0143]
[0144] These results show that tBuMe.sub.2SiLi-TMEDA is a suitable coating material. This is interesting because this trifunctional precursor can act as a source of three elements, Li, Si and N. The fact that tBuMe.sub.2SiLi-TMEDA coats Gd and S doped TiO.sub.2 suggests that it can be used to coat other substrates.
Example 13
TMA+SiLi.SUB.2.tBuMe Coated TiO.SUB.2
[0145] In order to further demonstrate the wide applicability of the ALD treatment procedure presented above, the procedure was used to apply SiLi.sub.2tBuMe to TiO.sub.2.
[0146]
[0147]
[0148]
[0149]
[0150]
[0151] These results show that SiLi.sub.2tBuMe is a suitable coating material and/or confirm that that TiO.sub.2 is a suitable substrate for additional embodiments of the invention. Alternatively or additionally, these results suggest that SiL.sub.2tBuMe can be used in ALD to coat a wide variety of substrates.