ORGANIC SEMICONDUCTORS

Abstract

The invention relates to novel organic semiconducting (OSC) compounds containing one or more ester-substituted 4,8-dithiophenyl-benzodithiophene units or derivatives thereof, to methods for their preparation and educts or intermediates used therein, to compositions and formulations containing them, to the use of the compounds and compositions as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE devices comprising these compounds or compositions.

Claims

1. A compound which is a conjugated oligomer or polymer comprising one or more repeating units of formula II1 and/or II2, and optionally one or more repeating units of formula II3:
—(Ar.sup.1).sub.a—U—(Ar.sup.2).sub.b—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—  II1
—(Ar.sup.1).sub.a—(Ar.sup.2).sub.b—U—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—  II2
—(Ar.sup.1).sub.a—(Ar.sup.2).sub.b—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—  II3 wherein the individual radicals, independently of each other and on each occurrence identically or differently, have the following meanings U a unit of formula I, ##STR00106## R.sup.1, R.sup.2 are straight-chain, branched or cyclic alkyl with 1 to 30 C atoms, in which one or more CH.sub.2 groups are optionally replaced by —O—, —S—, —C(═O)—, —C(═S)—, —C(═O)—O—, —O—C(═O)—, —NR.sup.0—, —SiR.sup.0R.sup.00—, —CF.sub.2—, —CR.sup.0═CR.sup.00—, —CY.sup.1═CY.sup.2— or —C≡C— in such a manner that O and/or S atoms are not linked directly to one another, and in which one or more H atoms are optionally replaced by F, Cl, Br, I or CN, and in which one or more CH.sub.2 or CH.sub.3 groups are optionally replaced by a cationic or anionic group, or aryl, heteroaryl, arylalkyl or heteroarylalkyl, wherein each of the aforementioned cyclic groups has 5 to 20 ring atoms, is mono- or polycyclic, does optionally contain fused rings, and is unsubstituted or substituted by one or more identical or different groups L, R.sup.3-6 are H, F, Cl, CN, or straight-chain, branched or cyclic alkyl with 1 to 30 C atoms, in which one or more CH.sub.2 groups are optionally replaced by —O—, —S—, —C(═O)—, —C(═S)—, —C(═O)—O—, —O—C(═O)—, —NR.sup.0—, —SiR.sup.0R.sup.00—, —CF.sub.2—, —CR.sup.0═CR.sup.00—, —CY.sup.1═CY.sup.2— or —C≡C— in such a manner that O and/or S atoms are not linked directly to one another, and in which one or more H atoms are optionally replaced by F, Cl, Br, I or CN, and in which one or more CH.sub.2 or CH.sub.3 groups are optionally replaced by a cationic or anionic group, or aryl, heteroaryl, arylalkyl, heteroarylalkyl, aryloxy or heteroaryloxy, wherein each of the aforementioned cyclic groups has 5 to 20 ring atoms, is mono- or polycyclic, does optionally contain fused rings, and is unsubstituted or substituted by one or more identical or different groups L, L is F, Cl, —CN, —NC, —NCO, —NCS, —OCN, —SCN, R.sup.0, OR.sup.0, SR.sup.0, —C(═O)X.sup.0, —C(═O)R.sup.0, —C(═O)—OR.sup.0, —O—C(═O)—R.sup.0, —NH.sub.2, —NHR.sup.0, —NR.sup.0R.sup.00, —C(═O)NHR.sup.0, —C(═O)NR.sup.0R.sup.00, —SO.sub.3R.sup.0, —SO.sub.2R.sup.0, —OH, —NO.sub.2, —CF.sub.3, —SF.sub.5, or optionally substituted silyl, or carbyl or hydrocarbyl with 1 to 30 C atoms that is optionally substituted and optionally comprises one or more hetero atoms, Y.sup.1, Y.sup.2 are H, F, Cl or CN, X.sup.0 is halogen, R.sup.0, R.sup.00 are H or straight-chain or branched alkyl with 1 to 20 C atoms that is optionally fluorinated, a1, b1 are 1, c1, d1 are 0, 1 or 2, wherein a1+c1 and b1+d1≤3, Ar.sup.1-4 are selected from the group consisting of the following formulae ##STR00107## ##STR00108## ##STR00109## ##STR00110## ##STR00111## ##STR00112## wherein R.sup.11, R.sup.12, R.sup.13, and R.sup.14 independently of each other have one of the meanings of R.sup.3 a, b, c, d 0 or 1, wherein in formula II3 a+b+c+d≥1.

2. The compound according to claim 1, characterized in that it is selected from the following formulae ##STR00113## ##STR00114## wherein a, b, c, d are each independently 0 or 1, x is >0 and ≤1 y, z, v, w are each ≥0 and <1, x+y+z+w is 1, and n is an integer ≥5.

Description

DETAILED DESCRIPTION

[0104] The compounds of the present invention are easy to synthesize and exhibit advantageous properties. They show good processability for the device manufacture process, high solubility in organic solvents, and are especially suitable for large scale production using solution processing methods.

[0105] Co-polymers derived from monomers of the present invention and electron acceptor monomers show low bandgaps, high charge carrier mobilities, high external quantum efficiencies in BHJ solar cells, good morphology when used in p/n-type blends e.g. with fullerenes, high oxidative stability, a long lifetime in electronic devices, and are promising materials for organic electronic OE devices, especially for OPV devices with high power conversion efficiency.

[0106] The compounds of the present invention are especially suitable as both p-type and n-type semiconductors, depending on the nature of the co-monomer or n-units cross-coupled to extend the conjugation, for the preparation of blends of p-type and n-type semiconductors which are suitable for use in BHJ photovoltaic devices.

[0107] Besides, the compounds of the present invention show the following advantageous properties: [0108] i) a higher Voc which is beneficial for solar cell module production, [0109] ii) an improved morphology of the BHJ which can be achieved by modification of the solubilizing groups and which can lead to the an increased fill factor (FF).

[0110] Preferably, in the unit of formula I a1 is >0 and b1 is >0.

[0111] In another preferred embodiment of the present invention, in the unit of formula I b1 is 0 and a1 is 1 or 2.

[0112] In another preferred embodiment of the present invention, in the unit of formula I a1-b1-1 and c1 and d1 are independently of each other 0, 1 or 2, preferably 0 or 1, very preferably 0.

[0113] In another preferred embodiment of the present invention, in the unit of formula I a1 is 2, b1 is 1 or 2, c1 is 0 or 1, preferably 0, and d1 is 0, 1 or 2, preferably 0 or 1, very preferably 0.

[0114] Preferably the unit of formula I is selected of formula I1

##STR00009##

[0115] wherein R.sup.1-6 have, on each occurrence identically or differently, the meanings given above and below, and b1 is 0, 1 or 2, preferably 1 or 2.

[0116] In a preferred embodiment of the present invention, in the units of formula I R.sup.1 and R.sup.2 are selected from straight-chain or branched alkyl with 1 to 30, preferably 1 to 20 C atoms that is unsubstituted or substituted by one or more F atoms, most preferably from formulae SUB1-SUB6 above.

[0117] In another preferred embodiment of the present invention, in the units of formula I and I1 R.sup.1 and R.sup.2 are selected from mono- or polycyclic aryl or heteroaryl, each of which is optionally substituted with one or more groups L as defined in formula I and has 5 to 20 ring atoms, and wherein two or more rings may be fused to each other or connected with each other by a covalent bond, very preferably phenyl that is optionally substituted, preferably in 4-position, 2,4-positions, 2,4,6-positions or 3,5-positions, or thiophene that is optionally substituted, preferably in 5-position, 4,5-positions or 3,5-positions, with alkyl, alkoxy or thioalkyl having 1 to 16 C atoms, most preferably from formulae SUB7-SUB18 above.

[0118] In a preferred embodiment of the present invention, in the units of formula I and I1 R.sup.3-6 are H.

[0119] In another preferred embodiment of the present invention, in the units of formula I and I1 at least one of R.sup.3 and R.sup.4 is different from H.

[0120] In another preferred embodiment of the present invention, in the units of formula I and I1 at least one of R.sup.5 and R.sup.6 is different from H.

[0121] In a preferred embodiment of the present invention, in the units of formula I and I1, R.sup.3-6, when being different from H, are each independently selected from F, Cl, CN, or from straight-chain or branched alkyl, alkoxy, sulfanylalkyl, sulfonylalkyl, alkylcarbonyl, alkoxycarbonyl and alkylcarbonyloxy, each of which has 1 to 20 C atoms and is unsubstituted or substituted by one or more F atoms, most preferably from F, Cl or formulae SUB1-SUB6 above.

[0122] In another preferred embodiment of the present invention, in the units of formula I and I1 R.sup.3-6, when being different from H, are each independently selected are selected from mono- or polycyclic aryl or heteroaryl, each of which is optionally substituted with one or more groups L as defined in formula I and has 5 to 20 ring atoms, and wherein two or more rings may be fused to each other or connected with each other by a covalent bond, very preferably phenyl that is optionally substituted, preferably in 4-position, 2,4-positions, 2,4,6-positions or 3,5-positions, or thiophene that is optionally substituted, preferably in 5-position, 4,5-positions or 3,5-positions, with alkyl, alkoxy or thioalkyl having 1 to 16 C atoms, more preferably from formulae SUB7-SUB18 above, most preferably from formulae SUB14-SUB18 above.

[0123] Preferred aryl and heteroaryl groups R.sup.1-6, when being different from H, are each independently selected from the following formulae

##STR00010## ##STR00011## ##STR00012## ##STR00013##

wherein R.sup.11-17, independently of each other, and on each occurrence identically or differently, have one of the meanings of R.sup.3 in formula I.

[0124] Very preferred aryl and heteroaryl groups R.sup.1-6, when being different from H, are each independently selected from the following formulae

##STR00014##

[0125] wherein R.sup.11-15 are as defined above. Most preferred aryl and heteroaryl groups R.sup.1-6 are each independently selected from formulae SUB7-SUB18 as defined above.

[0126] In another preferred embodiment one or more of R.sup.1-6, when being different from H, denote a straight-chain, branched or cyclic alkyl group with 1 to 50, preferably 2 to 50, very preferably 2 to 30, more preferably 2 to 24, most preferably 2 to 16 C atoms, in which one or more CH.sub.2 or CH.sub.3 groups are replaced by a cationic or anionic group.

[0127] The cationic group is preferably selected from the group consisting of phosphonium, sulfonium, ammonium, uronium, thiouronium, guanidinium or heterocyclic cations such as imidazolium, pyridinium, pyrrolidinium, triazolium, morpholinium or piperidinium cation.

[0128] Preferred cationic groups are selected from the group consisting of tetraalkylammonium, tetraalkylphosphonium, N-alkylpyridinium, N,N-dialkylpyrrolidinium, 1,3-dialkylimidazolium, wherein “alkyl” preferably denotes a straight-chain or branched alkyl group with 1 to 12 C atoms and very preferably is selected from formulae SUB1-6.

[0129] Further preferred cationic groups are selected from the group consisting of the following formulae

##STR00015## ##STR00016## ##STR00017##

[0130] wherein R.sup.1′, R.sup.2′, R.sup.3′ and R.sup.4′ denote, independently of each other, H, a straight-chain or branched alkyl group with 1 to 12 C atoms or non-aromatic carbo- or heterocyclic group or an aryl or heteroaryl group, each of the aforementioned groups having 3 to 20, preferably 5 to 15, ring atoms, being mono- or polycyclic, and optionally being substituted by one or more identical or different substituents L as defined above, or denote a link to the respective group R.sup.1-6.

[0131] In the above cationic groups of the above-mentioned formulae any one of the groups R.sup.1′, R.sup.2′, R.sup.3′ and R.sup.4′ (if they replace a CH.sub.3 group) can denote a link to the respective group R.sup.1-6, or two neighbored groups R.sup.1′, R.sup.2′, R.sup.3+ or R.sup.4′ (if they replace a CH.sub.2 group) can denote a link to the respective group R.sup.1-6.

[0132] The anionic group is preferably selected from the group consisting of borate, imide, phosphate, sulfonate, sulfate, succinate, naphthenate or carboxylate, very preferably from phosphate, sulfonate or carboxylate.

[0133] In the formulae above and below, L is preferably selected from the following groups [0134] the group consisting of R, —OR and —SR wherein R is straight-chain or branched alkyl with 1 to 25, preferably 1 to 18 C atoms which is optionally fluorinated, [0135] the group consisting of F, Cl, CN, —C(═O)—R, —C(═O)—OR, —OC(═O)—R, —C(═O)—NHR and —C(═O)—NRR.sup.n, wherein R and R.sup.n are independently of each other straight-chain or branched alkyl with 1 to 25, preferably 1 to 18 C atoms that is optionally fluorinated.

[0136] The compounds according to the present invention include oligomers and polymers, which are preferably conjugated.

[0137] A preferred embodiment of the present invention relates to a conjugated polymer comprising one or more, preferably two or more, repeating units selected of formula I or I1.

[0138] Another preferred embodiment of the present invention relates to a conjugated oligomer or polymer, preferably a conjugated polymer, comprising one or more, preferably two or more, units of formula I or I1, and additionally comprising one or more arylene or heteroarylene units that are different from formula I and I1, have from 5 to 20 ring atoms, are mono- or polycyclic, do optionally contain fused rings, are unsubstituted or substituted by one or more identical or different groups L, wherein one or more of these additional arylene or heteroarylene units have electron donor or electron acceptor property property.

[0139] Another preferred embodiment of the present invention relates to a conjugated oligomer or polymer, preferably a conjugated polymer, comprising, preferably consisting of, one or more, preferably two or more, repeating units of formula II1 and/or II2, and optionally one or more repeating units of formula II3:

—(Ar.sup.1).sub.a—U—(Ar.sup.2).sub.b—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—  II1

—(Ar.sup.1).sub.a—(Ar.sup.2).sub.b—U—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—  II2

—(Ar.sup.1).sub.a—(Ar.sup.2).sub.b—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—  II3

[0140] wherein the individual radicals, independently of each other and on each occurrence identically or differently, have the following meanings [0141] U a unit of formula I or I1 as defined above and below, [0142] Ar.sup.1-4 arylene or heteroarylene that has 5 to 20 ring atoms, is mono- or polycyclic, does optionally contain fused rings, is unsubstituted or substituted by one or more identical or different groups L as defined in formula I, and is different from U, [0143] a, b, c, d 0 or 1, wherein in formula II3 a+b+c+d≥1.

[0144] Preferably the conjugated oligomer or polymer comprises one or more repeating units of formula II1 or II2 wherein a+b+c+d≥1.

[0145] Further preferably the conjugated oligomer or polymer comprises one or more repeating units of formula II1 wherein b=1 and a=c=d=0 and one or more repeating units of formula II3 wherein a=b=0 and c=d=1.

[0146] Further preferably the conjugated oligomer or polymer comprises two or more distinct repeating units of formula II1 wherein b=1 and a=c=d=0.

[0147] Further preferably at least one of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4 is an arylene or heteroarylene group as being defined in formula II1 and having electron donor property.

[0148] Further preferably the conjugated oligomer or polymer according to the present invention is selected of formula III:

##STR00018##

[0149] wherein the individual radicals, independently of each other and on each occurrence identically or differently, have the following meanings [0150] A a unit of formula I or I1, II1 or II2 as defined above and below, [0151] B, C, D, E a unit of formula I or I1, II1, II2 or II3 as defined above and below, [0152] x>0 and ≤1, [0153] v, w, y, z≥0 and <1, [0154] v+w+x+y+z 1, and [0155] n an integer >1, preferably ≥5.

[0156] Preferred oligomers and polymers of formula III are selected from the following subformulae

##STR00019## ##STR00020## ##STR00021##

[0157] wherein R.sup.1, R.sup.2, Ar.sup.1, Ar.sup.2, Ar.sup.3, Ar.sup.4, a, b, c, d, v, x, y, z and n have the meanings of formula I, II1 and III or one of the preferred meanings given above and below, and preferably one or more of Ar.sup.3 and Ar.sup.4 are selected from arylene or heteroarylene units as described above and below having electron acceptor properties.

[0158] Another preferred embodiment of the invention relates to a conjugated oligomer or polymer, preferably a conjugated polymer, comprising one or more electron donating units (“donor units”), at least one of which is selected of formula I or I1, preferably further comprising one or more electron accepting units (“acceptor units”), and optionally comprising one or more spacer units separating a donor unit from an acceptor unit, wherein each donor and acceptor unit is directly connected either to to another donor or acceptor unit or to a spacer unit, and wherein all of the donor, acceptor and spacer units that are different from formula I and i1 are each independently selected from arylene or heteroarylene that has from 5 to 20 ring atoms, is mono- or polycyclic, optionally contains fused rings, are is unsubstituted or substituted by one or more identical or different groups L as defined above.

[0159] Preferably the spacer units, if present, are located between the donor and acceptor units such that a donor unit and an acceptor unit are not directly connected to each other.

[0160] Preferred conjugated oligomers and polymers of this preferred embodiment comprise, very preferably consist of, one or more units selected from the group consisting of the following formulae

-(D-Sp)-  U1

-(A-Sp)-  U2

-(A-D)-  U3

-(D)-  U4

-(Sp-D-Sp)-  U5

-(A)-  U6

-(Sp-A-Sp)-  U7

[0161] wherein D denotes a donor unit, A denotes an acceptor unit and Sp denotes a spacer unit, all of which are selected, independently of each other and on each occurrence identically or differently, from arylene or heteroarylene that has from 5 to 20 ring atoms, is mono- or polycyclic, optionally contains fused rings, are is unsubstituted or substituted by one or more identical or different groups L as defined above, and wherein the oligomer or polymer comprises at least one unit selected from formulae U1, U3, U4 and U5 wherein D is a unit selected of formula I or I1.

[0162] Very preferred oligomers and polymers of this preferred embodiment are those selected from formulae Pi-Pviii

-[(D-Sp).sub.x-(A-Sp).sub.y].sub.n-  Pi

-[(A-D).sub.x-(A-Sp).sub.y].sub.n—  Pii

-[(D).sub.x-(Sp-A-Sp).sub.y].sub.n—  Piii

-[D-Sp-A-Sp].sub.n-  Piv

-[D-A].sub.n—  Pv

-[D-Sp-A-Sp].sub.n  Pvi

-[D.sup.1-A-D.sup.2-A].sub.n  Pvii

-[D-A.sup.1-D-A.sup.2].sub.n  Pviii

[0163] wherein A, D and Sp are as defined in formula U1-U7, A and D can each, in case of multiple occurrence, also have different meanings, D.sup.1 and D.sup.2 have one of the meanings given for D and are different from each other, A.sup.1 and A.sup.2 have one of the meanings given for A and are different from each other, x and y denote the molar fractions of the corresponding units, x and y are each, independently of one another, a non-integer >0 and <1, with x+y=1, and n is an integer >1.

[0164] Especially preferred are repeating units, oligomers and polymers of formulae II1, II2, II3, III, III1-III8, U1-U7, Pi-Pviii and their subformulae wherein one or more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4, or wherein D, respectively, denote arylene or heteroarylene that has electron donor properties and is selected from the group consisting of the following formulae

##STR00022## ##STR00023## ##STR00024## ##STR00025## ##STR00026## ##STR00027## ##STR00028## ##STR00029## ##STR00030## ##STR00031## ##STR00032## ##STR00033## ##STR00034## ##STR00035## ##STR00036## ##STR00037## ##STR00038## ##STR00039## ##STR00040## ##STR00041## ##STR00042## ##STR00043## ##STR00044##

[0165] wherein R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15, R.sup.16, R.sup.17 and R.sup.18 independently of each other have one of the meanings of R.sup.3 as given in formula I or one of its preferred meanings as given above and below.

[0166] Preferred donor units are selected from formulae D1, D7, D10, D11, D19, D22, D29, D30, D35, D36, D37, D44, D55, D84, D87, D88, D89, D93, D94, D106, D111, D139, D140, D141, D146 or D150 wherein preferably at least one of R.sup.11, R.sup.12, R.sup.13 and R.sup.14 is different from H.

[0167] Further preferred are repeating units, oligomers and polymers of formulae II1, II2, II3, III, III1-III8, U1-U7, Pi-Pviii and their subformulae wherein one or more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4, or wherein A, respectively, denote arylene or heteroarylene that has electron acceptor properties and is selected from the group consisting of the following formulae

##STR00045## ##STR00046## ##STR00047## ##STR00048## ##STR00049## ##STR00050## ##STR00051## ##STR00052## ##STR00053## ##STR00054## ##STR00055## ##STR00056## ##STR00057## ##STR00058## ##STR00059## ##STR00060## ##STR00061##

[0168] wherein R.sup.11, R.sup.12, R.sup.13, R.sup.14, R.sup.15 and R.sup.16 independently of each other have one of the meanings of R.sup.3 as given in formula I or one of its preferred meanings as given above and below.

[0169] Preferred acceptor units are selected from formulae A1, A6, A7, A15, A16, A20, A36, A74, A84, A88, A92, A94, A98 or A103 wherein preferably at least one of R.sup.11, R.sup.12, R.sup.13 and R.sup.14 is different from H.

[0170] Further preferred are repeating units and polymers of formulae II1, II2, II3, III, III1-III8, U1-U7, Pi-Pviii and their subformulae wherein one or more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4, or wherein Sp, respectively, denote arylene or heteroarylene selected from the group consisting of the following formulae

##STR00062## ##STR00063##

[0171] wherein R.sup.11, R.sup.12, R.sup.13, R.sup.14 independently of each other have one of the meanings of R.sup.3 as given in formula I or one of its preferred meanings as given above and below.

[0172] In the formulae Sp1 to Sp17 preferably R.sup.11 and R.sup.12 are H. In formula Sp18 preferably R.sup.11-14 are H or F.

[0173] Very preferred are units selected from formulae Sp1, Sp2, Sp6, Sp10, Sp11, Sp12, Sp13 and Sp14, wherein preferably one of R.sup.11 and R.sup.12 is H or both R.sup.11 and R.sup.12 are H.

[0174] Further preferred are repeating units and polymers of formulae II1, II2, III, III1-III8 and their subformulae wherein [0175] a) one or more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4 denote arylene or heteroarylene, preferably having electron donor properties, selected from the group consisting of the formulae D1-D151, very preferably of the formulae D1, D7, D10, D11, D19, D22, D29, D30, D35, D36, D37, D44, D55, D84, D87, D88, D89, D93, D94, D106, D111, D139, D140, D141, D146 and D150, and/or [0176] b) one or more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4 denote arylene or heteroarylene, preferably having electron accpetor properties, selected from the group consisting of the formulae A1-A103, very preferably of the formulae A1, A6, A7, A15, A16, A20, A36, A74, A84, A88, A92, A94, A98, A103 and A104, [0177] and [0178] c) one or more of Ar.sup.1, Ar.sup.2, Ar.sup.3 and Ar.sup.4 denote arylene or heteroarylene selected from the group consisting of the formulae Sp1-Sp18, very preferably of the formulae Sp1, Sp2, Sp6, Sp10, Sp11, Sp12, Sp13 and Sp14.

[0179] Further preferred are oligomers and polymers of subformulae III1-III8 wherein Ar.sup.1 and Ar.sup.2 have the same meaning and are selected from formulae D1, D7, D10, D11, D19, D22, D29, D30, D35, D36, D44, D55, D84, D87, D88, D89, D93, D106, D111, D140, D141, D146 and D150.

[0180] Further preferred are repeating units of formula U1-U7, oligomers and polymers of formula Pi-Pviii wherein [0181] a) the donor units D are selected from the group consisting of the formulae D1, D7, D10, D11, D19, D22, D29, D30, D35, D36, D37, D44, D55, D84, D87, D88, D89, D93, D106, D111, D119, D140, D141, D146, and D147, [0182] b) the acceptor units A selected from the group consisting of the formulae A1, A2, A5, A15, A16, A20, A74, A88, A92, A94 and A98, A99, A100, A104 [0183] and [0184] c) the spacer units Sp selected from the group consisting of the formulae Sp1-Sp18, very preferably of the formulae Sp1, Sp6, Sp11 and Sp14, [0185] wherein the spacer units, if present, are preferably located between the donor and acceptor units such that a donor unit and an acceptor unit are not directly connected to each other.

[0186] Further preferred oligomers and polymers of formula III and Pi-Pviii are selected from the following subformulae

##STR00064## ##STR00065## ##STR00066## ##STR00067## ##STR00068## ##STR00069## ##STR00070##

[0187] R.sup.1, R.sup.2, R.sup.5 and R.sup.6 have one of the meanings of formula I or one of the preferred meanings given above and below above and below, and R.sup.5 and R.sup.6 preferably denote H,

[0188] x, y and n have one of the meanings of formula III or one of the preferred meanings given above and below above and below,

[0189] R.sup.11, R.sup.12, R.sup.15, R.sup.16, R.sup.17, R.sup.18 and R.sup.19 have one of the meanings of R.sup.3 as given in formula I or one of its preferred meanings as given above and below,

[0190] X.sup.1, X.sup.2, X.sup.3, X.sup.4, X.sup.5 and X.sup.6 have one of the meanings of R.sup.3 given in formula I or one of its preferred meanings given above and below, and preferably denote H, F, Cl, —CN, R.sup.0, OR.sup.0 or C(═O)OR.sup.0, and R.sup.0 is as defined above and below.

[0191] Further preferably the conjugated polymer is selected of formula IV

R.sup.21-chain-R.sup.22  IV

[0192] wherein “chain” denotes a polymer chain selected of formulae III, III1-III8, Pi-Pviii and P1-P28, and R.sup.21 and R.sup.2 have independently of each other one of the meanings of L as defined above, or denote, independently of each other, H, F, Br, Cl, I, —CH.sub.2Cl, —CHO, —CR′═CR″.sub.2, —SiR′R″R″′, —SiR′X′X″, —SiR′R″X′, —SnR′R″R″′, —BR′R″, —B(OR′)(OR″), —B(OH).sub.2, —O—SO.sub.2—R′, —C≡CH, —C≡C—SiR′.sub.3, —ZnX′ or an endcap group, X′ and X″ denote halogen, R′, R″ and R″′ have independently of each other one of the meanings of R.sup.0 given in formula I, and preferably denote alkyl with 1 to 12 C atoms, and two of R′, R″ and R″′ may also form a cyclosilyl, cyclostannyl, cycloborane or cycloboronate group with 2 to 20 C atoms together with the respective hetero atom to which they are attached.

[0193] Preferred endcap groups R.sup.21 and R.sup.2 are H, C.sub.1-20 alkyl, or optionally substituted C.sub.6-12 aryl or C.sub.2-10 heteroaryl, very preferably H or phenyl.

[0194] In the oligomers and polymers according to the present invention, including but not limited to those of formula III, IV, Pi-Pviii, P1-P28 and their subformulae, the indices v, w, x, y and z denote the mole fraction of the corresponding repeating units, such as A-E, and n denotes the degree of polymerisation or total number of repeating units. These formulae include block copolymers, random or statistical copolymers and alternating copolymers, as well as homopolymers for the case when x>0 and v=w=y=z=0.

[0195] In the oligomers and polymers according to the present invention, including but not limited to those of formula III, IV, Pi-Pviii, P1-P28 and their subformulae, wherein one of v, w, y and z is not 0 and the others of v, w, y and z are 0, x and the one of v, w, y and z which is not 0 are each preferably from 0.1 to 0.9, very preferably from 0.3 to 0.7.

[0196] In the polymers according to the present invention, including but not limited to those of formula III, IV, Pi-Pviii, P1-P28 and their subformulae, wherein two of v, w, y and z are not 0 and the others of v, w, y and z are 0, x and those of v, w, y and z which are not 0 are each preferably from 0.1 to 0.8, very preferably from 0.2 to 0.6.

[0197] In the oligomers and polymers according to the present invention, including but not limited to those of formula III, IV, Pi-Pviii, P1-P28 and their subformulae, wherein three of v, w, y and z are not 0 and the others of v, w, y and z are 0, x and those of v, w, y and z which are not 0 are each preferably from 0.1 to 0.7, very preferably from 0.2 to 0.5.

[0198] In the oligomers and polymers according to the present invention, including but not limited to those of formula III, IV, Pi-Pviii, P1-P28 and their subformulae, wherein all of v, w, y and z are not 0, x, v, w, y and z are each preferably from 0.1 to 0.6, very preferably from 0.2 to 0.4.

[0199] In the oligomers according to the present invention, the total number of repeating units n is preferably from 2 to 10, very preferably from 2 to 5.

[0200] In the polymers according to the present invention, the total number of repeating units n is preferably from 2 to 10,000, very preferably from 5 to 10,000. The total number of repeating units n is preferably ≥5, very preferably ≥10, most preferably ≥50, and preferably ≤500, very preferably ≤1,000, most preferably ≤2,000, including any combination of the aforementioned lower and upper limits of n.

[0201] The polymers of the present invention include homopolymers and copolymers, like statistical or random copolymers, alternating copolymers and block copolymers, as well as combinations thereof.

[0202] The oligomers and polymers of the present invention can be prepared from the corresponding monomers, which are preferably selected from formula V1 and V2

R.sup.23—(Ar.sup.1).sub.a—U—(Ar.sup.2).sub.b—(Ar.sup.3).sub.c—(Ar.sup.4)—R.sup.24  V1

R.sup.23—(Ar.sup.1).sub.a—(Ar.sup.2).sub.b—U—(Ar.sup.3).sub.c—(Ar.sup.4).sub.d—R.sup.24  V2

[0203] wherein U, Ar.sup.1-4, a, b, c and d have the meanings of formula II1, or one of the preferred meanings as described above and below, and R.sup.23 and R.sup.24 are independently of each other selected from the group consisting of H, which is preferably an activated C—H bond, Cl, Br, I, O-tosylate, O-triflate, O-mesylate, O-nonaflate, —SiMe.sub.2F, —SiMeF.sub.2, —O—SO.sub.2Z.sup.1, —B(OZ.sup.2).sub.2, —CZ.sup.3═C(Z.sup.3).sub.2, —C≡CH, —C≡CSi(Z.sup.1).sub.3, —ZnX.sup.0 and —Sn(Z.sup.4).sub.3, wherein X.sup.0 is halogen, Z.sup.1-4 are selected from the group consisting of alkyl and aryl, preferably C.sub.1-10 alkyl and C.sub.6-12 aryl, each being optionally substituted, and two groups Z.sup.2 may also form a cycloboronate group having 2 to 20 C atoms together with the B- and O-atoms, and wherein at least one of R.sup.23 and R.sup.24 is different from H, and preferably both of R.sup.23 and R.sup.24 are different from H.

[0204] Very preferred are monomers of formula V1 and V2 and their subformulae wherein a+b+c+d≥1.

[0205] Further preferred are monomers of formula V1 and its subformulae wherein a+b+c+d=0.

[0206] Further preferred are monomers of formula V1 and V2 and their subformulae wherein R.sup.23 and R.sup.24 are selected from Br, —B(OZ.sup.2).sub.2 and Sn(Z.sup.4).sub.3.

[0207] Further preferred are monomers selected from the following subformulae

R.sup.23—U—R.sup.24  V1a

R.sup.23—Ar.sup.1—U—Ar.sup.2—R.sup.24  V1b

R.sup.23—Ar.sup.1—U—R.sup.24  V1c

R.sup.23—U—Ar.sup.2—R.sup.24  V1d

[0208] wherein U, Ar.sup.1, Ar.sup.2, R.sup.3 and R.sup.24 are as defined in formula V1.

[0209] Very preferred are monomers of formula V1 and V2 and their subformulae wherein R.sup.23 and R.sup.24 are selected from Br, B(OZ.sup.2).sub.2 and Sn(Z.sup.4).sub.3.

[0210] Further preferred are monomers of of formulae V1, V2, V1a-V1d and their subformulae wherein Ar.sup.1 and/or Ar.sup.2 are selected from the following groups [0211] a) the group consisting of the formulae D1-D145, very preferably of the formulae D1, D7, D10, D11, D19, D22, D29, D30, D35, D36, D37, D44, D55, D84, D87, D88, D89, D93, D94, D106, D111, D139, D140, D141 and D150, [0212] b) the group consisting of the formulae A1-A98, very preferably of the formulae A1, A6, A7, A15, A16, A20, A36, A74, A84, A88, A92, A98 and A103, [0213] c) the group consisting of the formulae Sp1-Sp18, very preferably of the formulae Sp1, Sp2, Sp6, Sp10, Sp11, Sp12, Sp13 and Sp14.

[0214] Further preferred are monomers of formula V3

R.sup.23—U*—R.sup.24  V3

[0215] wherein R.sup.23 and R.sup.24 have the meanings given above and below, and preferably denote Br, B(OZ.sup.2).sub.2 or Sn(Z.sup.4).sub.6, and U* is a unit selected from the subformulae P1-P28 above wherein n is 1.

[0216] Novel monomers selected from the formulae V1, V2, V3 and their subformulae as described above and below are another object of the invention.

[0217] Another object of the invention are monomers selected form formula V1 or V2 wherein at least one of a, b, c and d is different from 0, preferably selected from formulae V1b, Vic and V1d or the preferred monomer embodiments as described above and below. Another object of the invention are monomers selected form formula V3

[0218] Further preferred units, monomers, oligomers and polymers of formulae I, I1, II1, II2, II3, III, III1-III8, U1-U7, Pi-Pviii, P1-P28, IV, V1, V2, V3 and their subformulae are selected from the following embodiments, including any combination thereof: [0219] n≥5. [0220] n is from 5 to 2,000, most preferably from 10 to 1,000, [0221] a1 is 1 or 2 and b1 is 0, [0222] a1-b1-1 and c1 and d1 are independently of each other 0, 1 or 2, preferably 0 or 1, very preferably 0, [0223] a1 is 2, b1 is 1 or 2, c1 is 0 or 1, preferably 0, and d1 is 0, 1 or 2, preferably 0 or 1, very preferably 0, [0224] R.sup.1 and R.sup.2 are selected from alkyl that is straight-chain or branched, has 1 to 25, preferably 1 to 18 C atoms, and is optionally fluorinated, [0225] R.sup.1 and R.sup.2 are selected from formulae SUB1-SUB6, [0226] R.sup.3-6 denote H, [0227] one or more of R.sup.3-6 is different from H and is selected from alkyl, alkoxy or thiaalkyl, all of which are straight-chain or branched, have 1 to 25, preferably 1 to 18 C atoms, and are optionally fluorinated, [0228] one or more of R.sup.3-6 is different from H and is selected from F, Cl, CN, —C(═O)—R.sup.n, —C(═O)—OR.sup.n, —C(═O)—NHR.sup.n and —C(═O)—NR.sup.nR.sup.m, wherein R.sup.m and R.sup.n are independently of each other straight-chain or branched alkyl with 1 to 25, preferably 1 to 18 C atoms that is optionally fluorinated, [0229] one or more of R.sup.3-6 is different from H and is selected from the group consisting of aryl, heteroaryl, aryloxy, heteroaryloxy, arylalkyl and heteroarylalkyl, each of which has 4 to 20 ring atoms and optionally contains fused rings and is unsubstituted or substituted by one or more groups L as defined in formula I, [0230] one or more of R.sup.11-18 is different from H and is selected from alkyl, alkoxy or thiaalkyl, all of which are straight-chain or branched, have 1 to 25, preferably 1 to 18 C atoms, and are optionally fluorinated, [0231] one or more of R.sup.11-18 is different from H and is selected from F, Cl, CN, —C(═O)—R.sup.n, —C(═O)—OR.sup.n, —C(═O)—NHR.sup.n and —C(═O)—NR.sup.nR.sup.m, wherein R.sup.m and R.sup.n are independently of each other straight-chain or branched alkyl with 1 to 25, preferably 1 to 18 C atoms that is optionally fluorinated, [0232] one or more of R.sup.11-18 is different from H and is selected from the group consisting of aryl, heteroaryl, aryloxy, heteroaryloxy, arylalkyl and heteroarylalkyl, each of which has 4 to 20 ring atoms and optionally contains fused rings and is unsubstituted or substituted by one or more groups L as defined in formula I, [0233] R is straight-chain or branched alkyl with 1 to 25, preferably 1 to 18 C atoms which is optionally fluorinated, [0234] R is aryl, heteroaryl, arylalkyl or heteroarylalkyl, each of which has 4 to 20 ring atoms, optionally contains fused rings, and is unsubstituted or substituted by one or more groups L as defined in formula I, [0235] L is selected from alkyl, alkoxy or thiaalkyl, all of which are straight-chain or branched, have 1 to 25, preferably 1 to 18 C atoms, and are optionally fluorinated, [0236] L is selected from F, Cl, CN, —C(═O)—R.sup.n, —C(═O)—OR.sup.n, —C(═O)—NHR.sup.n and —C(═O)—NR.sup.nR.sup.m, wherein R.sup.m and R.sup.n are independently of each other straight-chain or branched alkyl with 1 to 25, preferably 1 to 18 C atoms that is optionally fluorinated, [0237] L is halogen, preferably F or Cl, [0238] L is CN, F or Cl, [0239] R.sup.21 and R.sup.22 are selected from H, C.sub.1-20 alkyl, or optionally substituted C.sub.6-12 aryl or C.sub.2-10 heteroaryl, very preferably H or phenyl, [0240] R.sup.23 and R.sup.24 denote Br, B(OZ.sup.2).sub.2 or Sn(Z.sup.4).sub.3, wherein Z.sup.2 and Z.sup.4 are as defined in formula V1.

[0241] The oligomers and polymers according to the present invention can be synthesized according to or in analogy to methods that are known to the skilled person and are described in the literature. Other methods of preparation can be taken from the examples.

[0242] The oligomers and polymers according to the present invention can be prepared for example by copolymerising one or more monomers of formula V1, V2 or V1a-V1d with each other or with one or monomers of the following formulae in an aryl-aryl coupling reaction

R.sup.23—Ar.sup.1—R.sup.24  MI

R.sup.23—Ar.sup.2—R.sup.24  MII

R.sup.23—Ar.sup.3—R.sup.24  MIII

R.sup.23—Ar.sup.4—R.sup.24  MIV

[0243] wherein Ar.sup.1-4, R.sup.23 and R.sup.24 have the meanings given in formula II2 and V1 or one of the preferred meanings given above and below.

[0244] For example, the oligomers and polymers can be suitably prepared by aryl-aryl coupling reactions, such as Yamamoto coupling, C—H activation coupling, Suzuki coupling, Stille coupling, Sonogashira coupling, Heck coupling or Buchwald coupling. Suzuki coupling, Stille coupling and Yamamoto coupling are especially preferred. The monomers which are polymerised to form the repeat units of the polymers can be prepared according to methods which are known to the person skilled in the art.

[0245] Preferably the oligomers and polymers are prepared from monomers selected from formulae V1, V2, V3, V1a-d and MI-MIV as described above.

[0246] Another aspect of the invention is a process for preparing an oligomer or polymer by coupling one or more identical or different monomers selected from formulae V1, V2, V1a-d with each other and/or with one or more co-monomers, preferably selected from formulae MI-MIV, in a polymerisation reaction, preferably in an aryl-aryl coupling reaction.

[0247] Preferred aryl-aryl coupling and polymerisation methods used in the processes described above and below are Yamamoto coupling, Kumada coupling, Negishi coupling, Suzuki coupling, Stille coupling, Sonogashira coupling, Heck coupling, C—H activation coupling, Ullmann coupling or Buchwald coupling. Especially preferred are Suzuki coupling, Negishi coupling, Stille coupling and Yamamoto coupling. Suzuki coupling is described for example in WO 00/53656 A1. Negishi coupling is described for example in J. Chem. Soc., Chem. Commun., 1977, 683-684. Yamamoto coupling is described in for example in T. Yamamoto et al., Prog. Polym. Sci., 1993, 17, 1153-1205, or WO 2004/022626 A1. Stille coupling is described for example in Z. Bao et al., J. Am. Chem. Soc., 1995, 117, 12426-12435. C—H activation is described for example for example in M. Leclerc et al, Angew. Chem. Int. Ed. 2012, 51, 2068-2071. For example, when using Yamamoto coupling, monomers having two reactive halide groups are preferably used. When using Suzuki coupling, monomers having two reactive boronic acid or boronic acid ester groups or two reactive halide groups are preferably used. When using Stille coupling, monomers having two reactive stannane groups or two reactive halide groups are preferably used. When using Negishi coupling, monomers having two reactive organozinc groups or two reactive halide groups are preferably used. When synthesizing a linear polymer by C—H activation polymerisation, preferably a monomer as described above is used wherein at least one reactive group is an activated hydrogen bond.

[0248] Preferred catalysts, especially for Suzuki, Negishi or Stille coupling, are selected from Pd(0) complexes or Pd(II) salts. Preferred Pd(0) complexes are those bearing at least one phosphine ligand such as Pd(Ph.sub.3P).sub.4. Another preferred phosphine ligand is tris(ortho-tolyl)phosphine, i.e. Pd(o-Tol.sub.3P).sub.4. Preferred Pd(II) salts include palladium acetate, i.e. Pd(Oac).sub.2 or trans-di(μ-acetato)-bis[o-(di-o-tolylphosphino)benzyl]dipalladium(II). Alternatively the Pd(0) complex can be prepared by mixing a Pd(0) dibenzylideneacetone complex, for example tris(dibenzyl-ideneacetone)dipalladium(0), bis(dibenzylideneacetone)palladium(0), or Pd(II) salts e.g. palladium acetate, with a phosphine ligand, for example triphenylphosphine, tris(ortho-tolyl)phosphine, tris(o-methoxyphenyl)phosphine or tri(tert-butyl)phosphine. Suzuki polymerisation is performed in the presence of a base, for example sodium carbonate, potassium carbonate, cesium carbonated, lithium hydroxide, potassium phosphate or an organic base such as tetraethylammonium carbonate or tetraethylammonium hydroxide. Yamamoto polymerisation employs a Ni(0) complex, for example bis(1,5-cyclooctadienyl) nickel(0).

[0249] Suzuki, Stille or C—H activation coupling polymerisation may be used to prepare homopolymers as well as statistical, alternating and block random copolymers. Statistical, random block copolymers or block copolymers can be prepared for example from the above monomers, wherein one of the reactive groups is halogen and the other reactive group is a C—H activated bond, boronic acid, boronic acid derivative group or and alkylstannane. The synthesis of statistical, alternating and block copolymers is described in detail for example in WO 03/048225 A2 or WO 2005/014688 A2.

[0250] As alternatives to halogen as described above, leaving groups of formula —O—SO.sub.2Z.sup.1 can be used wherein Z.sup.1 is as defined above. Particular examples of such leaving groups are tosylate, mesylate and triflate.

[0251] Preferred polymerisation conditions lead to alternating polymers which are particularly preferred for OTFT application, whereas statistical block co-polymers are prepared preferably for OPV and OPD application. Preferred polycondensation are Suzuki coupling, Stille coupling, Sonogashira coupling, Heck coupling or Buchwald coupling, Negishi coupling or C—H activation coupling where the first set of reactive groups is composed of —Cl, —Br, —I, O-tosylate, O-triflate, O-mesylate and O-nonaflate and the second set of reactive groups is composed of —H, —SiR.sub.2F, —SiRF.sub.2, —B(OR).sub.2, —CR═CHR′, —C≡CH, —ZnX, —MgX and —Sn(R.sub.3). If a Yamamoto coupling reaction is used to prepare the polymer, the reactive monomer ends are both composed independently of —Cl, —Br, —I, O-tosylate, O-triflate, O-mesylate and O-nonaflate.

[0252] Suitable and preferred methods for preparing compounds according to the present invention are illustrated in the reaction schemes below, wherein the individual radicals are as defined above.

[0253] A synthesis method for a monomer comprising a unit of formula I or I1 is exemplarily illustrated in Scheme 1, wherein R has one of the meanings given for R.sup.1 in formula I.

##STR00071##

[0254] Further monomers can be prepared in analogy to Scheme 1.

[0255] The oligomers and polymers can be synthesized from these monomers by, or in analogy to, the aryl-aryl coupling reactions as described above. Particularly, conjugated polymers can be made by Pd catalysed direct arylation polymerisation with a dibromo counterpart (M. Wakioka, et al., Macromol., 2015, 48, 8382) or Pd catalysed polycondensations methods such as Yamamoto reaction (Yamamoto et al., Bull., Chem. Soc. Jpn., 1978, 51(7), 2091; Yamamo to et al., Macromolecules, 1992, 25(4), 1214), Suzuki-Miyaura reaction (Miyaura et al., Chem. Rev., 1995, 95, 2457) and Stille reaction (Bao et al., J. Am., Chem., Soc., 1995, 117(50), 12426) using the terminally brominated derivatives.

[0256] The novel methods of preparing a monomer, oligomer or polymer as described above and below, and the novel monomers and intermediates used therein, are further aspects of the invention.

[0257] The compounds according to the present invention can also be used in compositions or polymer blends, for example together with small molecules or other polymers having charge-transport, semiconducting, electrically conducting, photoconducting and/or light-emitting semiconducting properties, or for example with polymers having hole blocking, electron blocking properties for use as interlayers, charge blocking layers, charge transporting layer in OLED devices, OPV devices or perovskite based solar cells.

[0258] Small molecules according to the present invention which contain one or more electron withdrawing groups can also be used as n-type semiconductors. For example they can be used as replacement of, or in addition to, fullerenes, especially in mixtures or blends of p-type and n-type semiconductors for use in OPV or OPD devices. Preferred compounds for use as n-type semiconductors are those of formula VI or their subformulae, wherein R.sup.T1 and/or R.sup.T2 denote or contain an electron withdrawing group.

[0259] Another aspect of the invention relates to a composition, which may also be a polymer blend, comprising one or more compounds according to the present invention and one or more small molecule compounds and/or polymers having one or more of a charge-transport, semiconducting, electrically conducting, photoconducting, hole blocking and electron blocking property.

[0260] These compositions can be prepared by conventional methods that are described in prior art and known to the skilled person. Typically the compounds are mixed with each other or dissolved in suitable solvents and the solutions combined.

[0261] Another aspect of the invention relates to a formulation comprising one or more polymers, polymer blends or compositions as described above and below and one or more organic solvents.

[0262] Preferred solvents are aliphatic hydrocarbons, chlorinated hydrocarbons, aromatic hydrocarbons, ketones, ethers and mixtures thereof. Additional solvents which can be used include 1,2,4-trimethylbenzene, 1,2,3,4-tetra-methyl benzene, pentylbenzene, mesitylene, cumene, cymene, cyclohexylbenzene, diethylbenzene, tetralin, decalin, 2,6-lutidine, 2-fluoro-m-xylene, 3-fluoro-o-xylene, 2-chlorobenzotrifluoride, N,N-dimethylformamide, 2-chloro-6-fluorotoluene, 2-fluoroanisole, anisole, 2,3-dimethylpyrazine, 4-fluoroanisole, 3-fluoroanisole, 3-trifluoro-methylanisole, 2-methylanisole, phenetol, 4-methylanisole, 3-methylanisole, 4-fluoro-3-methylanisole, 2-fluorobenzonitrile, 4-fluoroveratrol, 2,6-dimethylanisole, 3-fluorobenzo-nitrile, 2,5-dimethylanisole, 2,4-dimethylanisole, benzonitrile, 3,5-dimethyl-anisole, N,N-dimethylaniline, ethyl benzoate, 1-fluoro-3,5-dimethoxy-benzene, 1-methylnaphthalene, N-methylpyrrolidinone, 3-fluorobenzo-trifluoride, benzotrifluoride, dioxane, trifluoromethoxy-benzene, 4-fluorobenzotrifluoride, 3-fluoropyridine, toluene, 2-fluoro-toluene, 2-fluorobenzotrifluoride, 3-fluorotoluene, 4-isopropylbiphenyl, phenyl ether, pyridine, 4-fluorotoluene, 2,5-difluorotoluene, 1-chloro-2,4-difluorobenzene, 2-fluoropyridine, 3-chlorofluoro-benzene, 1-chloro-2,5-difluorobenzene, 4-chlorofluorobenzene, chloro-benzene, o-dichlorobenzene, 2-chlorofluorobenzene, p-xylene, m-xylene, o-xylene or mixture of o-, m-, and p-isomers. Solvents with relatively low polarity are generally preferred. For inkjet printing solvents and solvent mixtures with high boiling temperatures are preferred. For spin coating alkylated benzenes like xylene and toluene are preferred.

[0263] Examples of especially preferred solvents include, without limitation, dichloromethane, trichloromethane, chlorobenzene, o-dichlorobenzene, tetrahydrofuran, anisole, 2,4-dimethylanisole, 1-methylnaphthalene, morpholine, toluene, o-xylene, m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone, 1,2-dichloroethane, 1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate, N,N-dimethyiformamide, dimethylacetamide, dimethylsulfoxide, 1,5-dimethyltetraline, propiophenone, acetophenone, tetraline, 2-methylthiophene, 3-methylthiophene, decaline, indane, methyl benzoate, ethyl benzoate, mesitylene and/or mixtures thereof.

[0264] The concentration of the polymers in the solution is preferably 0.1 to 10% by weight, more preferably 0.5 to 5% by weight. Optionally, the solution also comprises one or more binders to adjust the rheological properties, as described for example in WO 2005/055248 A1.

[0265] After the appropriate mixing and ageing, solutions are evaluated as one of the following categories: complete solution, borderline solution or insoluble. The contour line is drawn to outline the solubility parameter-hydrogen bonding limits dividing solubility and insolubility. ‘Complete’ solvents falling within the solubility area can be chosen from literature values such as published in “Crowley, J. D., Teague, G. S. Jr and Lowe, J. W. Jr., Journal of Paint Technology, 1966, 38 (496), 296”. Solvent blends may also be used and can be identified as described in “Solvents, W. H. Ellis, Federation of Societies for Coatings Technology, p 9-10, 1986”. Such a procedure may lead to a blend of ‘non’ solvents that will dissolve both the polymers of the present invention, although it is desirable to have at least one true solvent in a blend.

[0266] The compounds according to the present invention can also be used in patterned OSC layers in the devices as described above and below. For applications in modern microelectronics it is generally desirable to generate small structures or patterns to reduce cost (more devices/unit area), and power consumption. Patterning of thin layers comprising a polymer according to the present invention can be carried out for example by photolithography, electron beam lithography or laser patterning.

[0267] For use as thin layers in electronic or electrooptical devices the compounds, compositions or formulations according to the present invention may be deposited by any suitable method. Liquid coating of devices is more desirable than vacuum deposition techniques. Solution deposition methods are especially preferred. The formulations of the present invention enable the use of a number of liquid coating techniques. Preferred deposition techniques include, without limitation, dip coating, spin coating, ink jet printing, nozzle printing, letter-press printing, screen printing, gravure printing, doctor blade coating, roller printing, reverse-roller printing, offset lithography printing, dry offset lithography printing, flexographic printing, web printing, spray coating, curtain coating, brush coating, slot dye coating or pad printing.

[0268] Ink jet printing is particularly preferred when high resolution layers and devices needs to be prepared. Selected formulations of the present invention may be applied to prefabricated device substrates by ink jet printing or microdispensing. Preferably industrial piezoelectric print heads such as but not limited to those supplied by Aprion, Hitachi-Koki, InkJet Technology, On Target Technology, Picojet, Spectra, Trident, Xaar may be used to apply the organic semiconductor layer to a substrate. Additionally semi-industrial heads such as those manufactured by Brother, Epson, Konica, Seiko Instruments Toshiba TEC or single nozzle microdispensers such as those produced by Microdrop and Microfab may be used.

[0269] In order to be applied by ink jet printing or microdispensing, the polymers should be first dissolved in a suitable solvent. Solvents must fulfil the requirements stated above and must not have any detrimental effect on the chosen print head. Additionally, solvents should have boiling points >100° C., preferably >140° C. and more preferably >150° C. in order to prevent operability problems caused by the solution drying out inside the print head. Apart from the solvents mentioned above, suitable solvents include substituted and non-substituted xylene derivatives, di-C.sub.1-2-alkyl formamide, substituted and non-substituted anisoles and other phenol-ether derivatives, substituted heterocycles such as substituted pyridines, pyrazines, pyrimidines, pyrrolidinones, substituted and non-substituted N,N-di-C.sub.1-2-alkylanilines and other fluorinated or chlorinated aromatics.

[0270] A preferred solvent for depositing a compound according to the present invention by ink jet printing comprises a benzene derivative which has a benzene ring substituted by one or more substituents wherein the total number of carbon atoms among the one or more substituents is at least three. For example, the benzene derivative may be substituted with a propyl group or three methyl groups, in either case there being at least three carbon atoms in total. Such a solvent enables an ink jet fluid to be formed comprising the solvent with the compound or polymer, which reduces or prevents clogging of the jets and separation of the components during spraying. The solvent(s) may include those selected from the following list of examples: dodecylbenzene, 1-methyl-4-tert-butylbenzene, terpineol, limonene, isodurene, terpinolene, cymene, diethylbenzene. The solvent may be a solvent mixture, that is a combination of two or more solvents, each solvent preferably having a boiling point >100° C., more preferably >140° C. Such solvent(s) also enhance film formation in the layer deposited and reduce defects in the layer.

[0271] The ink jet fluid (that is mixture of solvent, binder and semiconducting compound) preferably has a viscosity at 20′C of 1-100 mPa-s, more preferably 1-50 mPa-s and most preferably 1-30 mPa-s.

[0272] The compounds, compositions and formulations according to the present invention can additionally comprise one or more further components or additives selected for example from surface-active compounds, lubricating agents, wetting agents, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents which may be reactive or non-reactive, auxiliaries, colourants, dyes or pigments, sensitizers, stabilizers, nanoparticles or inhibitors.

[0273] The compounds and compositions according to the present invention are useful as charge transport, semiconducting, electrically conducting, photoconducting or light emitting material in optical, electrooptical, electronic, electroluminescent or photoluminescent components or devices. In these devices, a compound or composition of the present invention is typically applied as a thin layer or film.

[0274] Thus, the present invention also provides the use of the compound, composition or layer in an electronic device. The formulation may be used as a high mobility semiconducting material in various devices and apparatus. The formulation may be used, for example, in the form of a semiconducting layer or film. Accordingly, in another aspect, the present invention provides a semiconducting layer for use in an electronic device, the layer comprising a polymer, composition or polymer blend according to the invention. The layer or film may be less than about 30 microns. For various electronic device applications, the thickness may be less than about 1 micron thick. The layer may be deposited, for example on a part of an electronic device, by any of the aforementioned solution coating or printing techniques.

[0275] The invention additionally provides an electronic device comprising a polymer, polymer blend, composition or organic semiconducting layer according to the present invention. Especially preferred devices are OFETs, TFTs, ICs, logic circuits, capacitors, RFID tags, OLEDs, OLETs, OPEDs, OPVs, OPDs, solar cells, dye-sensitized solar cells (DSSC), perovskite-based solar cells, laser diodes, photoconductors, photodetectors, electrophotographic devices, electrophotographic recording devices, organic memory devices, sensor devices, charge injection layers, Schottky diodes, planarising layers, antistatic films, conducting substrates and conducting patterns.

[0276] Especially preferred electronic device are OFETs, OLEDs, OPV and OPD devices, in particular OPD and bulk heterojunction (BHJ) OPV devices. In an OFET, for example, the active semiconductor channel between the drain and source may comprise the layer of the invention. As another example, in an OLED device, the charge (hole or electron) injection or transport layer may comprise the layer of the invention.

[0277] For use in OPV or OPD devices the polymer according to the present invention is preferably used in a composition that comprises or contains, preferably consists of, one or more p-type semiconductors and one or more n-type semiconductors.

[0278] In a preferred embodiment at least one of the p-type semiconductors in the composition is a compound according to the present invention which is preferably a conjugated polymer. In this preferred embodiment the n-type semiconductor is preferably a fullerene or substituted fullerene.

[0279] In another preferred embodiment at least one of the n-type semiconductors in the composition is a compound according to the present invention which is preferably a small molecule, very preferably a compound of formula VI. In this preferred embodiment the p-type semiconductor is preferably a conjugated polymer.

[0280] In another preferred embodiment the OPV or OPD device comprises a composition comprising a compound according to the present invention as first n-type semiconductor, and further comprising an p-type semiconductor like a conjugated polymer, and a second n-type semiconductor, which is preferably a fullerene or substituted fullerene.

[0281] The n-type semiconductor or second n-type semiconductor in the composition of the aforementioned embodiments is for example an inorganic material such as zinc oxide (ZnO.sub.x), zinc tin oxide (ZTO), titanium oxide (TiO.sub.x), molybdenum oxide (MoO.sub.x), nickel oxide (NiO.sub.x), or cadmium selenide (CdSe), or an organic material such as graphene or a fullerene, a conjugated polymer or a fullerene or substituted fullerene.

[0282] The fullerene is for example an indene-C.sub.60-fullerene bisaduct like ICBA, or a (6,6)-phenyl-butyric acid methyl ester derivatized methano C.sub.60 fullerene, also known as “PCBM-C.sub.60” or “C.sub.60PCBM”, as disclosed for example in G. Yu, J. Gao, J. C. Hummelen, F. WudI, A. J. Heeger, Science 1995, Vol. 270, p. 1789 ff and having the structure shown below, or structural analogous compounds with e.g. a C.sub.61 fullerene group, a C.sub.70 fullerene group, or a C.sub.71 fullerene group, or an organic polymer (see for example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533).

##STR00072##

[0283] Preferably the fullerene is PCBM-C60, PCBM-C70, bis-PCBM-C60, bis-PCBM-C70, ICMA-c60 (1′,4′-dihydro-naphtho[2′,3′:1,2][5,6]fullerene-C60), ICBA, oQDM-C60 (1′,4′-dihydro-naphtho[2′,3′:1,9][5,6]fullerene-C60-lh), or bis-oQDM-C60.

[0284] Further preferably the n-type semiconductor or second n-type semiconductor in the composition of the aforementioned embodiments is a fullerene or substituted fullerene of formula XII,

##STR00073## [0285] C.sub.n denotes a fullerene composed of n carbon atoms, optionally with one or more atoms trapped inside, [0286] Adduct.sup.1 is a primary adduct appended to the fullerene C.sub.n with any connectivity, [0287] Adduct.sup.2 is a secondary adduct, or a combination of secondary adducts, appended to the fullerene C.sub.n with any connectivity, [0288] k is an integer ≥1, [0289] and [0290] l is 0, an integer ≥1, or a non-integer >0.

[0291] In the formula XII and its subformulae, k preferably denotes 1, 2, 3 or, 4, very preferably 1 or 2.

[0292] The fullerene C.sub.n in formula XII and its subformulae may be composed of any number n of carbon atoms Preferably, in the compounds of formula XII and its subformulae the number of carbon atoms n of which the fullerene C.sub.n is composed is 60, 70, 76, 78, 82, 84, 90, 94 or 96, very preferably 60 or 70.

[0293] The fullerene C.sub.n in formula XII and its subformulae is preferably selected from carbon based fullerenes, endohedral fullerenes, or mixtures thereof, very preferably from carbon based fullerenes.

[0294] Suitable and preferred carbon based fullerenes include, without limitation, (C.sub.60-Ih)[5,6]fullerene, (C.sub.70-D5h)[5,6]fullerene, (C.sub.76-D2′)[5,6]fullerene, (C.sub.84-D2*)[5,6]fullerene, (C.sub.84-D2d)[5,6]fullerene, or a mixture of two or more of the aforementioned carbon based fullerenes.

[0295] The endohedral fullerenes are preferably metallofullerenes. Suitable and preferred metallofullerenes include, without limitation, La@C.sub.60, La@C.sub.82, Y@C.sub.82, Sc.sub.3N@C.sub.80, Y.sub.3N@C.sub.80, Sc.sub.3C.sub.2@C.sub.80 or a mixture of two or more of the aforementioned metallofullerenes.

[0296] Preferably the fullerene C.sub.n is substituted at a [6,6] and/or [5,6] bond, preferably substituted on at least one [6,6] bond.

[0297] Primary and secondary adduct, named “Adduct” in formula XII and its subformulae, is preferably selected from the following formulae

##STR00074## ##STR00075## ##STR00076## ##STR00077##

[0298] wherein C.sub.n is as defined in formula XII, [0299] Ar.sup.S1, Ar.sup.S2 denote, independently of each other, an arylene or heteroarylene group with 5 to 20, preferably 5 to 15, ring atoms, which is mono- or polycyclic, and which is optionally substituted by one or more identical or different substituents having one of the meanings of L as defined above and below, and [0300] R.sup.S1, R.sup.S2, R.sup.S3, R.sup.S4, R.sup.S5 and R.sup.S6 independently of each other denote H, CN or have one of the meanings of L as defined above and below, and [0301] i is an integer from 1 to 20, preferably from 1 to 12.

[0302] Preferred compounds of formula XII are selected from the following subformulae:

##STR00078## ##STR00079##

[0303] wherein C.sub.n, k and l are as defined in formula XII, and [0304] R.sup.S1, R.sup.S2, R.sup.S3, R.sup.S4 R.sup.S5 and R.sup.S6 independently of each other denote H or have one of the meanings of L as defined above and below.

[0305] Further preferably the n-type semiconductor or second n-type semiconductor in the composition of the aforementioned embodiments is selected from graphene, metal oxides, like for example, ZnOx, TiOx, ZTO, MoOx, NiOx, quantum dots, like for example, CdSe or CdS, or conjugated polymers, like for example a polynaphthalenediimide or polyperylenediimide as described, for example, in WO2013142841 A1.

[0306] In another preferred embodiment the n-type semiconductor is an organic small molecule which does not contain a fullerene moiety (hereinafter also referred to as “non-fullerene acceptors” or NFA), and which is selected from naphthalene or perylene carboximide derivatives. Preferred naphthalene or perylene carboximide derivatives are described for example in Adv. Sci. 2016, 3, 1600117, Adv. Mater. 2016, 28, 8546-8551, J. Am. Chem. Soc., 2016, 138, 7248-7251 and J. Mater. Chem. A, 2016, 4, 17604.

[0307] In another preferred embodiment, the n-type semiconductor is an NFA which is selected from compounds comprising a polycyclic core and attached thereto two terminal groups which are electron withdrawing relative to the polycyclic core, and optionally further comprising one or more aromatic or heteroaromatic spacer groups, which are located between the polycyclic core and the terminal groups and which can be electron withdrawing or electron donating relative to the polycyclic core. As a result these preferred NFAs have an acceptor-donor-acceptor (A-D-A) structure, wherein the polycyclic core acts as donor and the terminal groups, optionally together with the spacer groups, act as acceptor.

[0308] Preferred A-D-A type NFAs are selected from formula N

R.sup.T1—(Ar.sup.11).sub.n11-core-(Ar.sup.12).sub.n12—R.sup.T2  N

[0309] wherein, the individual radicals, independently of each other and on each occurrence identically or differently, have the following meanings

[0310] Ar.sup.11 and Ar.sup.12 are selected from the following formulae

##STR00080##

[0311] wherein X.sup.21, X.sup.22, X.sup.23 and X.sup.24 denote H, F, Cl, —CN, R.sup.0, OR.sup.0 or C(═O)OR.sup.0, and R.sup.0 is as defined above and below,

[0312] “core” is selected from the following formulae

##STR00081##

[0313] wherein R.sup.1-6 have the meanings given in formula I or one of the preferred meanings given above and below, and the pair of R.sup.1 and R.sup.2, and/or the pair of R.sup.3 and R.sup.4, together with the C atom to which they are attached, may also form a spiro group with 5 to 20 ring atoms which is mono- or polycyclic, optionally contains fused rings, and is unsubstituted or substituted by one or more identical or different groups L, and R.sup.7, R.sup.8 in formula C2 and C3 and R.sup.11 and R.sup.12 in formula C1 preferably denote H or F, [0314] R.sup.T1 and R.sup.T2 are electron withdrawing groups selected from the following formulae

##STR00082## ##STR00083## [0315] L has one of the meanings given above, [0316] L′ has one of the meanings given for L, [0317] r is 0, 1, 2, 3 or 4, [0318] s is 0, 1, 2, 3, 4 or 5, [0319] u is 0, 1 or 2, [0320] and n11, n12 denote 0, 1, 2 or 3.

[0321] Preferred compounds of formula N are selected from the following embodiments or any combination thereof: [0322] R.sup.T1 and R.sup.T2 are selected from formulae T6, T7, T8 and T11, [0323] “core” is selected from formula C2, formula C3 wherein R.sup.7 and R.sup.8 denote H, formula C3 wherein R.sup.7 and R.sup.8 denote F, formula C5 or formula C6, [0324] n11 and n12 are 0 or 1, [0325] Ar.sup.11 and Ar.sup.12 are selected of formula AR1, AR4, AR5 or AR6, [0326] R.sup.1-4 are selected from 4-alkylphenyl, 4-alkoxyphenyl, 3,5-dialkylphenyl or 3,5-dialkoxyphenyl, wherein alkyl is C.sub.1-16 alkyl, and alkoxy is C.sub.1-16 alkoxy.

[0327] Examples for suitable and preferred A-D-A type NFAs are the compound ITIC shown below, as disclosed by Y. Lin, J. Wang, Z.-G. Zhang, H. Bai, Y. Li, D. Zhu and X. Zhan, Adv. Mater. 2015, 27, 1170-1174, and the compound IEIC shown below, as disclosed by H. Lin, S. Chen, Z. Li, J. Y. L. Lai, G. Yang, T. McAfee, K. Jiang, Y. Li, Y. Liu, H. Hu, J. Zhao, W. Ma, H. Ade and H. Yan, Zhan, Adv. Mater., 2015, 27, 7299.

##STR00084##

[0328] Further examples for suitable and preferred A-D-A type NFAs are disclosed in WO 2018/007479 A1, WO 2018/036914 A1, WO 2018/065350 A1, WO 2018/065352 A1, WO 2018/065356 A1 and EP 3306690 A1.

[0329] The OPV or OPD device according to the present invention preferably comprises a first transparent or semi-transparent electrode on a transparent or semi-transparent substrate on one side of the active layer, and a second metallic or semi-transparent electrode on the other side of the active layer.

[0330] Preferably, the photoactive layer in an OPV or OPD device according to the present invention is further blended with additional organic and inorganic compounds to enhance the device properties. For example, metal particles such as Au or Ag nanoparticules or Au or Ag nanoprism for enhancements in light harvesting due to near-field effects (i.e. plasmonic effect) as described, for example in Adv. Mater. 2013, 25 (17), 2385-2396 and Adv. Ener. Mater. 10.1002/aenm.201400206, a molecular dopant such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane for enhancement in photoconductivity as described, for example in Adv. Mater. 2013, 25(48), 7038-7044, or a stabilising agent consisting of a UV absorption agent and/or anti-radical agent and/or antioxidant agent such as 2-hydroxybenzophenone, 2-hydroxyphenylbenzotriazole, oxalic acid anilides, hydroxyphenyl triazines, merocyanines, hindered phenol, N-aryl-thiomorpholine, N-aryl-thiomorpholine-1-oxide, N-aryl-thiomorpholine-1,1-dioxide, N-aryl-thiazolidine, N-aryl-thiazolidine-1-oxide, N-aryl-thiazolidine-1,1-dioxide and 1,4-diazabicyclo[2.2.2]octane as described, for example, in WO2012095796 A1 and in WO2013021971 A1.

[0331] The device preferably may further comprise a UV to visible photo-conversion layer such as described, for example, in J. Mater. Chem. 2011, 21, 12331 or a NIR to visible or IR to NIR photo-conversion layer such as described, for example, in J. Appl. Phys. 2013, 113, 124509.

[0332] Further preferably the OPV or OPD device comprises, between the active layer and the first or second electrode, one or more additional buffer layers acting as hole transporting layer and/or electron blocking layer, which comprise a material such as metal oxides, like for example, ZTO, MoO.sub.x, NiO.sub.x, a doped conjugated polymer, like for example PEDOT:PSS and polypyrrole-polystyrene sulfonate (PPy:PSS), a conjugated polymer, like for example polytriarylamine (PTAA), an organic compound, like for example substituted triaryl amine derivatives such as N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′diamine (NPB), N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD), graphene based materials, like for example, graphene oxide and graphene quantum dots or alternatively as hole blocking layer and/or electron transporting layer, which comprise a material such as metal oxide, like for example, ZnO.sub.x, TiO.sub.x, AZO (aluminium doped zinc oxide), a salt, like for example LiF, NaF, CsF, a conjugated polymer electrolyte, like for example poly[3-(6-trimethylammoniumhexyl)thiophene], poly(9,9-bis(2-ethylhexyl)-fluorene]-b-poly[3-(6-trimethylammoniumhexyl)thiophene], or poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)], a polymer, like for example poly(ethyleneimine) or crosslinked N-containing compound derivatives or an organic compound, like for example tris(8-quinolinolato)-aluminium(III) (Alq.sub.3), phenanthroline derivative or C.sub.60 or C.sub.70 based fullerenes, like for example, as described in Adv. Energy Mater. 2012, 2, 82-86.

[0333] In a composition comprising a small molecule compound according to the present invention and further comprising a polymer, the ratio polymer:small molecule compound is preferably from 5:1 to 1:5 by weight, more preferably from 1:1 to 1:3 by weight, most preferably 1:1 to 1:2 by weight.

[0334] In a composition comprising a polymer compound according to the present invention and further comprising a fullerene or modified fullerene, the ratio polymer:fullerene is preferably from 5:1 to 1:5 by weight, more preferably from 2:1 to 1:3 by weight, most preferably 1:1 to 1-2 by weight.

[0335] The composition according to the present invention may also comprise polymeric binder, preferably from 5 to 95% by weight. Examples of binder include polystyrene (PS), polypropylene (PP), polydimethylsilane (PDMS), and polymethylmethacrylate (PMMA).

[0336] To produce thin layers in BHJ OPV devices the compounds, compositions and formulations of the present invention may be deposited by any suitable method. Liquid coating of devices is more desirable than vacuum deposition techniques. Solution deposition methods are especially preferred. The formulations of the present invention enable the use of a number of liquid coating techniques. Preferred deposition techniques include, without limitation, dip coating, spin coating, ink jet printing, nozzle printing, letter-press printing, screen printing, gravure printing, doctor blade coating, roller printing, reverse-roller printing, offset lithography printing, dry offset lithography printing, flexographic printing, web printing, spray coating, curtain coating, brush coating, slot dye coating or pad printing. For the fabrication of OPV devices and modules area printing method compatible with flexible substrates are preferred, for example slot dye coating, spray coating and the like.

[0337] In the preparation of a formulation according to the present invention, suitable solvents are preferably selected to ensure full dissolution of both the p-type and n-type component, and take into account the boundary conditions (for example rheological properties) introduced by the chosen printing method.

[0338] Organic solvent are generally used for this purpose. Typical solvents can be aromatic solvents, halogenated solvents or chlorinated solvents, including chlorinated aromatic solvents. Examples include, but are not limited to chlorobenzene, 1,2-dichlorobenzene, chloroform, 1,2-dichloroethane, dichloromethane, carbon tetrachloride, toluene, cyclohexanone, ethylacetate, tetrahydrofuran, anisole, 2,4-dimethylanisole, 1-methylnaphthalene, morpholine, toluene, o-xylene, m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone, 1,2-dichloroethane, 1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate, n-butyl acetate, N,N-dimethylformamide, dimethylacetamide, dimethylsulfoxide, 1,5-dimethyltetraline, propiophenone, acetophenone, tetraline, 2-methylthiophene, 3-methylthiophene, decaline, indane, methyl benzoate, ethyl benzoate, mesitylene and combinations thereof.

[0339] The OPV device can for example be of any type known from the literature (see e.g. Waldauf et al., Appl. Phys. Lett., 2006, 89, 233517).

[0340] A first preferred OPV device according to the invention comprises the following layers (in the sequence from bottom to top): [0341] optionally a substrate, [0342] a high work function electrode, preferably comprising a metal oxide, like for example ITO and FTO, serving as anode, [0343] an optional conducting polymer layer or hole transport layer, preferably comprising an organic polymer or polymer blend, for example PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate), substituted triaryl amine derivatives, for example, TBD (N,N′-dyphenyl-N—N′-bis(3-methylphenyl)-1,1′biphenyl-4,4′-diamine) or NBD (N,N′-dyphenyl-N—N′-bis(1-napthylphenyl)-1,1′biphenyl-4,4′-diamine), [0344] a layer, also referred to as “photoactive layer”, comprising a p-type and an n-type organic semiconductor, which can exist for example as a p-type/n-type bilayer or as distinct p-type and n-type layers, or as blend or p-type and n-type semiconductor, forming a BHJ, [0345] optionally a layer having electron transport properties, for example comprising LiF, TiO.sub.x, ZnO.sub.x, PFN, a poly(ethyleneimine) or crosslinked nitrogen containing compound derivatives or a phenanthroline derivatives [0346] a low work function electrode, preferably comprising a metal like for example aluminum, serving as cathode, [0347] wherein at least one of the electrodes, preferably the anode, is transparent to visible and/or NIR light, and [0348] wherein the p-type or n-type semiconductor is a compound according to the present invention.

[0349] A second preferred OPV device according to the invention is an inverted OPV device and comprises the following layers (in the sequence from bottom to top): [0350] optionally a substrate, [0351] a high work function metal or metal oxide electrode, comprising for example ITO and FTO, serving as cathode, [0352] a layer having hole blocking properties, preferably comprising a metal oxide like TiO.sub.x or ZnO.sub.x, or comprising an organic compound such as polymer like poly(ethyleneimine) or crosslinked nitrogen containing compound derivatives or phenanthroline derivatives, [0353] a photoactive layer comprising a p-type and an n-type organic semiconductor, situated between the electrodes, which can exist for example as a p-type/n-type bilayer or as distinct p-type and n-type layers, or as blend or p-type and n-type semiconductor, forming a BHJ, [0354] an optional conducting polymer layer or hole transport layer, preferably comprising an organic polymer or polymer blend, for example of PEDOT:PSS, nafion or substituted triaryl amine derivatives, for example TBD or NBD, [0355] an electrode comprising a high work function metal like for example silver, serving as anode, [0356] wherein at least one of the electrodes, preferably the cathode, is transparent to visible and/or NIR light, and [0357] wherein the p-type or n-type semiconductor is a compound according to the present invention.

[0358] In the OPV devices of the present invention the p-type and n-type semiconductor materials are preferably selected from the materials, like the compound/polymer or compound/polymer/fullerene systems as described above.

[0359] When the active layer is deposited on the substrate, it forms a BHJ that phase separates at nanoscale level. For discussion on nanoscale phase separation see Dennier et al, Proceedings of the IEEE, 2005, 93 (8), 1429 or Hoppe et al, Adv. Func. Mater, 2004, 14(10), 1005. An optional annealing step may be then necessary to optimize blend morpohology and consequently OPV device performance.

[0360] Another method to optimize device performance is to prepare formulations for the fabrication of OPV(BHJ) devices that may include high boiling point additives to promote phase separation in the right way. 1,8-Octanedithiol, 1,8-diiodooctane, nitrobenzene, 1-chloronaphthalene, N,N-dimethylformamide, dimethylacetamide, dimethylsulfoxide and other additives have been used to obtain high-efficiency solar cells. Examples are disclosed in J. Peet, et al, Nat. Mater., 2007, 6, 497 or Fréchet et al. J. Am. Chem. Soc., 2010, 132, 7595-7597.

[0361] Another preferred embodiment of the present invention relates to the use of a compound or composition according to the present invention as dye, hole transport layer, hole blocking layer, electron transport layer and/or electron blocking layer in a DSSC or a perovskite-based solar cells, and to a DSSC or perovskite-based solar cells comprising a compound composition or polymer blend according to the present invention.

[0362] DSSCs and perovskite-based DSSCs can be manufactured as described in the literature, for example in Chem. Rev. 2010, 110, 6595-6663, Angew. Chem. Int. Ed. 2014, 53, 2-15 or in WO2013171520A1

[0363] The compounds and compositions of the present invention are also suitable for use in the semiconducting channel of an OFET. Accordingly, the invention also provides an OFET comprising a gate electrode, an insulating (or gate insulator) layer, a source electrode, a drain electrode and an organic semiconducting channel connecting the source and drain electrodes, wherein the organic semiconducting channel comprises a compound or composition according to the present invention. Other features of the OFET are well known to those skilled in the art.

[0364] OFETs where an OSC material is arranged as a thin film between a gate dielectric and a drain and a source electrode, are generally known, and are described for example in U.S. Pat. Nos. 5,892,244, 5,998,804, 6,723,394 and in the references cited in the background section. Due to the advantages, like low cost production using the solubility properties of the compounds according to the invention and thus the processibility of large surfaces, preferred applications of these FETs are such as integrated circuitry, TFT displays and security applications.

[0365] The gate, source and drain electrodes and the insulating and semiconducting layer in the OFET device may be arranged in any sequence, provided that the source and drain electrode are separated from the gate electrode by the insulating layer, the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconducting layer.

[0366] An OFET device according to the present invention preferably comprises: [0367] a source electrode, [0368] a drain electrode, [0369] a gate electrode, [0370] a semiconducting layer, [0371] one or more gate insulator layers, [0372] optionally a substrate.

[0373] wherein the semiconductor layer comprises a compound or composition according to the present invention.

[0374] The OFET device can be a top gate device or a bottom gate device.

[0375] Suitable structures and manufacturing methods of an OFET device are known to the skilled in the art and are described in the literature, for example in US 2007/0102696 A1.

[0376] The gate insulator layer preferably comprises a fluoropolymer, like e.g. the commercially available Cytop 809M® or Cytop 107M® (from Asahi Glass). Preferably the gate insulator layer is deposited, e.g. by spin-coating, doctor blading, wire bar coating, spray or dip coating or other known methods, from a formulation comprising an insulator material and one or more solvents with one or more fluoro atoms (fluorosolvents), preferably a perfluorosolvent. A suitable perfluorosolvent is e.g. FC750 (available from Acros, catalogue number 12380). Other suitable fluoropolymers and fluorosolvents are known in prior art, like for example the perfluoropolymers Teflon AF® 1600 or 2400 (from DuPont) or Fluoropel® (from Cytonix) or the perfluorosolvent FC 43Ω (Acros, No. 12377). Especially preferred are organic dielectric materials having a low permittivity (or dielectric constant) from 1.0 to 5.0, very preferably from 1.8 to 4.0 (“low k materials”), as disclosed for example in US 2007/0102696 A1 or U.S. Pat. No. 7,095,044.

[0377] In security applications, OFETs and other devices with semiconducting materials according to the present invention, like transistors or diodes, can be used for RFID tags or security markings to authenticate and prevent counterfeiting of documents of value like banknotes, credit cards or ID cards, national ID documents, licenses or any product with monetary value, like stamps, tickets, shares, cheques etc.

[0378] Alternatively, the compounds and compositions according to the invention can be used in OLEDs, e.g. as the active display material in a flat panel display applications, or as backlight of a flat panel display like e.g. a liquid crystal display. Common OLEDs are realized using multilayer structures. An emission layer is generally sandwiched between one or more electron-transport and/or hole-transport layers. By applying an electric voltage electrons and holes as charge carriers move towards the emissive layer where their recombination leads to the excitation and hence luminescence of the lumophor units contained in the emission layer.

[0379] The compounds and compositions according to the invention can be employed in one or more of a buffer layer, electron or hole transport layer, electron or hole blocking layer and emissive layer, corresponding to their electrical and/or optical properties. Furthermore their use within the emissive layer is especially advantageous, if the compounds according to the invention show electroluminescent properties themselves or comprise electroluminescent groups or compounds. The selection, characterization as well as the processing of suitable monomeric, oligomeric and polymeric compounds or materials for the use in OLEDs is generally known by a person skilled in the art, see, e.g., Müller et al, Synth. Metals, 2000, 111-112, 31-34, Alcala, J. Appl. Phys., 2000, 88, 7124-7128 and the literature cited therein.

[0380] According to another use, the compounds and compositions according to the present invention, especially those showing photoluminescent properties, may be employed as materials of light sources, e.g. in display devices, as described in EP 0 889 350 A1 or by C. Weder et al., Science, 1998, 279, 835-837.

[0381] A further aspect of the invention relates to both the oxidised and reduced form of a compound according to the present invention. Either loss or gain of electrons results in formation of a highly delocalised ionic form, which is of high conductivity. This can occur on exposure to common dopants. Suitable dopants and methods of doping are known to those skilled in the art, e.g. from EP 0 528 662, U.S. Pat. No. 5,198,153 or WO 96/21659.

[0382] The doping process typically implies treatment of the semiconductor material with an oxidating or reducing agent in a redox reaction to form delocalised ionic centres in the material, with the corresponding counterions derived from the applied dopants. Suitable doping methods comprise for example exposure to a doping vapor in the atmospheric pressure or at a reduced pressure, electrochemical doping in a solution containing a dopant, bringing a dopant into contact with the semiconductor material to be thermally diffused, and ion-implantantion of the dopant into the semiconductor material.

[0383] When electrons are used as carriers, suitable dopants are for example halogens (e.g., 12, Cl.sub.2, Br.sub.2, ICl, ICl.sub.3, IBr and IF), Lewis acids (e.g., PF.sub.5, AsF.sub.5, SbF.sub.5, BF.sub.5, BCl.sub.3, SbCl.sub.5, BBr.sub.3 and SO.sub.3), protonic acids, organic acids, or amino acids (e.g., HF, HCl, HNO.sub.3, H.sub.2SO.sub.4, HClO.sub.4, FSO.sub.3H and ClSO.sub.3H), transition metal compounds (e.g., FeCl.sub.3, FeOCl, Fe(ClO.sub.4).sub.3, Fe(4-CH.sub.3C.sub.6H.sub.4SO.sub.3).sub.3, TiCl.sub.4, ZrCl.sub.4, HfCl.sub.4, NbF.sub.5, NbCl.sub.5, TaCl.sub.5, MoF.sub.5, MoCl.sub.5, WF.sub.5, WCl.sub.6, UF.sub.6 and LnCl.sub.3 (wherein Ln is a lanthanoid), anions (e.g., Cl.sup.−, Br.sup.−, I.sup.−, I.sub.3.sup.−, HSO.sub.4.sup.−, SO.sub.4.sup.2−, NO.sub.3.sup.−, ClO.sub.4.sup.−, BF.sub.4.sup.−, PF.sub.6.sup.−, AsF.sub.6.sup.−, SbF.sub.6.sup.−, FeCl.sub.4.sup.−, Fe(CN).sub.6.sup.3−, and anions of various sulfonic acids, such as aryl-SO.sub.3.sup.−). When holes are used as carriers, examples of dopants are cations (e.g., H.sup.+, Li.sup.+, Na.sup.+, K.sup.+, Rb.sup.+ and Cs.sup.+), alkali metals (e.g., Li, Na, K, Rb, and Cs), alkaline-earth metals (e.g., Ca, Sr, and Ba), O.sub.2, XeOF.sub.4, (NO.sub.2.sup.+) (SbF.sub.6.sup.−), (NO.sub.2.sup.+) (SbCl.sub.6.sup.−), (NO.sub.2.sup.+) (BF.sub.4≤), AgClO.sub.4, H.sub.2IrCl.sub.6, La(NO.sub.3).sub.3.Math.6H.sub.2O, FSO.sub.2OOSO.sub.2F, Eu, acetylcholine, R.sub.4N.sup.+, (R is an alkyl group), R.sub.4P.sup.+ (R is an alkyl group), R.sub.6As.sup.+ (R is an alkyl group), and R.sub.3S.sup.+ (R is an alkyl group).

[0384] The conducting form of a compound according to the present invention can be used as an organic “metal” in applications including, but not limited to, charge injection layers and ITO planarising layers in OLED applications, films for flat panel displays and touch screens, antistatic films, printed conductive substrates, patterns or tracts in electronic applications such as printed circuit boards and condensers.

[0385] The compounds and compositions according to the present invention may also be suitable for use in organic plasmon-emitting diodes (OPEDs), as described for example in Koller et al., Nat. Photonics, 2008, 2, 684.

[0386] According to another use, the compounds according to the present invention can be used alone or together with other materials in or as alignment layers in LCD or OLED devices, as described for example in US 2003/0021913. The use of charge transport compounds according to the present invention can increase the electrical conductivity of the alignment layer. When used in an LCD, this increased electrical conductivity can reduce adverse residual dc effects in the switchable LCD cell and suppress image sticking or, for example in ferroelectric LCDs, reduce the residual charge produced by the switching of the spontaneous polarisation charge of the ferroelectric LCs. When used in an OLED device comprising a light emitting material provided onto the alignment layer, this increased electrical conductivity can enhance the electroluminescence of the light emitting material. The compounds according to the present invention having mesogenic or liquid crystalline properties can form oriented anisotropic films as described above, which are especially useful as alignment layers to induce or enhance alignment in a liquid crystal medium provided onto said anisotropic film. The polymers according to the present invention may also be combined with photoisomerisable compounds and/or chromophores for use in or as photoalignment layers, as described in US 2003/0021913 A1.

[0387] According to another use the compounds and compositions according to the present invention, especially their water-soluble derivatives (for example with polar or ionic side groups) or ionically doped forms, can be employed as chemical sensors or materials for detecting and discriminating DNA sequences. Such uses are described for example in L. Chen, D. W. McBranch, H. Wang, R. Helgeson, F. Wudl and D. G. Whitten, Proc. Natl. Acad. Sci. U.S.A., 1999, 96, 12287; D. Wang, X. Gong, P. S. Heeger, F. Rininsland, G. C. Bazan and A. J. Heeger, Proc. Natl. Acad. Sci. U.S.A., 2002, 99, 49; N. DiCesare, M. R. Pinot, K. S. Schanze and J. R. Lakowicz, Langmuir, 2002, 18, 7785; D. T. McQuade, A. E. Pullen, T. M. Swager, Chem. Rev., 2000, 100, 2537.

[0388] Unless the context clearly indicates otherwise, as used herein plural forms of the terms herein are to be construed as including the singular form and vice versa.

[0389] Throughout the description and claims of this specification, the words “comprise” and “contain” and variations of the words, for example “comprising” and “comprises”, mean “including but not limited to”, and are not intended to (and do not) exclude other components.

[0390] It will be appreciated that variations to the foregoing embodiments of the invention can be made while still falling within the scope of the invention. Each feature disclosed in this specification, unless stated otherwise, may be replaced by alternative features serving the same, equivalent or similar purpose. Thus, unless stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.

[0391] All of the features disclosed in this specification may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. In particular, the preferred features of the invention are applicable to all aspects of the invention and may be used in any combination. Likewise, features described in non-essential combinations may be used separately (not in combination).

[0392] Above and below, unless stated otherwise percentages are percent by weight and temperatures are given in degrees Celsius. Values of the di-electric constant E (“permittivity”) refer to values taken at 20° C. and 1,000 Hz.

[0393] The invention will now be described in more detail by reference to the following examples, which are illustrative only and do not limit the scope of the invention.

Example 1

Synthesis of 2-ethylhexyl thiophene-2-carboxylate

[0394] ##STR00085##

[0395] To solution of thiophene-2-carboxylic acid (5.00 g, 39.0 mmol), dicyclohexylcarbodiimide (9.65 g, 46.8 mmol) and 4-dimethylaminopyridine (1.25 g, 13.7 mmol) in dry dichloromethane (100 cm.sup.3) is added slowly 2-ethylhexyl alcohol (7.62 g, 58.8 mmol) and the mixture is stirred for 24 hour at 23° C. The organic layer is washed with water (100 cm.sup.3). An organic phase is separated and then dried over anhydrous magnesium sulphate. The organic layer is concentrated by vacuum evaporation, and the residue is purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to give 8.0 g of 2-ethylhexyl thiophene-2-carboxylate with a yield of 85%. .sup.1H NMR (CDCl.sub.3, 400 MHz, ppm) δ 7.80 (dd, J=1.2 Hz, J=3.6 Hz, 1H), 7.54 (dd, J=1.2 Hz, J=4.8 Hz, 1H), 7.10 (dd, J=3.6 Hz, J=4.8 Hz, 1H), 4.22 (dd, J=2.0 Hz, J=6.0 Hz, 2H), 1.71 (m, 1H), 1.47-1.3 (m, 8H), 0.96-0.89 (m, 6H). .sup.13C NMR (CDCl.sub.3, 100 MHz, ppm) δ 162.53, 134.33, 133.27, 132.24, 124.81, 67.66, 39.05, 30.69, 29.11, 24.11, 23.10, 14.16, 11.22. HRMS (El+): m/z calc. 240.1184, found 240.1185.

Synthesis of 5,5′-benzo[1,2-b:4,5-b′]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2′-bis(2-ethylhexyl) ester

[0396] ##STR00086##

[0397] 2-ethylhexyl thiophene-2-carboxylate (3.8 g, 15.8 mmol) is dissolved under inert atmosphere in 40 cm.sup.3 of anhydrous tetrahydrofurn. A solution of fresh lithium diisopropylmime (2 M, 15.8 mmol) is added dropwise at −78° C. After stirring for 1 hour, a solution of benzodithiophene-4,8-dione (1 g, 4.5 mmol, in 30 cm.sup.3 of tetrahydrofuran) is added. The reaction mixture is stirred for 1 hour at 23° C. A solution of tin(II)-chloride dihydrate (7.0 g, 31 mmol) in 10% hydrochloric acid (2.5 cm.sup.3) is added, and the resulting mixture is stirred for 16 hours and poured into water and extracted with dichloromethane (3×50 cm.sup.3). The organic layer is washed with brine, and dried over magnesium sulphate. The crude product was purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to afford 0.6 g of 5,5′-benzo[1,2-b:4,5-b]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2′-bis(2-ethylhexyl) ester with a yield of 20%. .sup.1H NMR (CDCl.sub.3, 400 MHz, ppm) δ 7.94 (d, J=4.0 Hz, 2H), 7.60 (d, J=5.6 Hz, 2H), 7.53 (d, J=5.6 Hz, 2H), 7.48 (d, J=4.0 Hz, 2H), 4.29 (d, J=5.6 Hz, 4H), 1.76 (m, 2H), 1.50-1.26 (m, 16H), 0.99-0.92 (m, 12H). .sup.13C NMR (CDCl.sub.3, 100 MHz, ppm) δ 162.23, 146.09, 139.20, 136.64, 134.74, 133.49, 128.81, 128.52, 123.49, 122.83, 67.81, 38.95, 30.57, 28.99, 23.99, 22.97, 14.04, 11.10. HRMS (MALDI): m/z calc. 666.1960, found 666.1958.

Synthesis of 5,5′-(2,6-dibromobenzo[1,2-b:4,5-b′]dithiophene-4,8-diyl)bis-2-thiophenecarboxylic acid, 2,2′-bis(2-ethylhexyl) ester

[0398] ##STR00087##

[0399] In a two-neck 100 mL flask under inert atmosphere, 5,5′-benzo[1,2-b:4,5-b′]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2′-bis(2-ethylhexyl) ester (3.0 g, 4.5 mmol) is dissolved in dichloromethane (50 cm.sup.3). A solution of bromine (1.51 g, 0.48 mL 9.45 mmol) in 10 cm.sup.3 of dichloromethane is added dropwise at 0° C. The mixture is stirred for 16 hours at 23° C. and poured into water. The excess bromine is quenched with sodium thiosulphate. The resulting solution is extracted with dichloromethane (3×50 cm.sup.3). The organic layer is washed with brine, and dried over magnesium sulphate. The crude product is purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to afford 3.2 g of 5,5′-(2,6-dibromobenzo[1,2-b:4,5-b′]dithiophene-4,8-diyl)bis-2-thiophenecarboxylic acid, 2,2′-bis(2-ethylhexyl) ester with a yield of 86%. .sup.1H NMR (CDCl.sub.3, 400 MHz, ppm) δ 7.91 (d, J=4.0 Hz, 2H), 7.53 (s, 2H), 7.40 (d, J=4.0 Hz, 2H), 4.29 (dd, J=1.2 Hz, J=5.6 Hz, 4H), 1.76 (m, 2H), 1.49-1.33 (m, 16H), 0.98-0.91 (m, 12H). .sup.13C NMR (CDCl.sub.3, 100 MHz, ppm) δ 162.11, 144.80, 140.54, 136.23, 135.50, 133.71, 129.03, 125.65, 121.92, 118.09, 68.11, 39.09, 30.72, 29.14, 24.13, 23.13, 14.22, 11.26. HRMS (MALDI): m/z calc. 822.0171, found 822.0170.

Synthesis of 5,5′-[2,6-bis(trimethylstannyl)benzol[1,2-b:4,5-b′]dithiophene-4,8-diyl]bis-2-thiophenecarboxylic acid, 2,2′-bis(2-ethylhexyl) ester

[0400] ##STR00088##

[0401] 5,5′-(2,6-dibromobenzo[1,2-b:4,5-b′]dithiophene-4,8-diyl)bis-2-thiophenecarboxylic acid, 2,2′-bis(2-ethylhexyl) ester (2.0 g, 2.42 mmol) is dissolved in anhydrous tetrahydrofuran (20 cm.sup.3). The n-butyllithium (2.2 cm.sup.3, 5.32 mmol, 2.4 M in hexane) is added slowly into this mixture within 15 minutes at −78° C. The resulting solution is stirred for 1 hour at this temperature. The trimethyltin chloride (5.32 cm.sup.3, 5.32 mmol, 1 M in hexane) is added dropwise. The mixture is stirred for 16 hours, then poured into water and extracted with dichloromethane (3×30 cm.sup.3). The combined organic phases are washed with brine, dried over magnesium sulphate and filtered. The filtrate is concentrated under reduced pressure to obtain crude product. This crude product is recrystallized using mixture of 40-60 petrol and propan-2-ol to give 1.5 g of product with a yield of 50%. .sup.1H NMR (Acetone-d6, 400 MHz, ppm) δ 8.00 (d, J=4.0 Hz, 2H), 7.75 (s, 2H), 7.64 (d, J=4.0 Hz, 2H), 4.31 (d, J=5.6 Hz, 4H), 1.76 (m, 2H), 1.50-1.35 (m, 16H), 1.16-0.92 (m, 12H), 0.50 (s, 18H). .sup.13C NMR (CDCl.sub.3, 100 MHz, ppm) δ 162.37, 147.05, 144.00, 143.49, 137.41, 134.42, 133.46, 130.32, 128.71, 121.72, 67.75, 38.97, 30.61, 29.00, 24.03, 22.99, 14.06, 11.13, −8.30. HRMS (MALDI): m/z calc. 994.1264, found 994.1260.

Synthesis of Polymer P1

[0402] ##STR00089##

[0403] wherein EH=2-ethylhexyl

[0404] Compound M1 (0.3 mmol), compound M2 (0.3 mmol) and chlorobenzene (6 cm.sup.3) are placed in a two-neck flask. The mixture is purged with argon for 5 minutes, and then 0.03 mmol of tetrakis(triphenylphosphine)palladium are added. The mixture is purged with argon for another 5 minutes. Then the mixture is heated up to 115° C. under argon for 24 hours. After cooling to room temperature, the reaction mixture is poured into methanol. The polymer is filtered and subjected to Soxhlet extraction with acetone, hexane, dichloromethane and chloroform. The chloroform fraction is collected, concentrated and precipitated in methanol. The target polymer is collected by filtration and dried in vacuum to afford a black solid 290 mg (76%).

[0405] Molecular weight: 10.6 kg mol−1, PDI 2.2, measuring at 145° C., in o-dichlorobenzene.

Examples 2-6

[0406] The following polymers were synthesized in analogy to the method described in Example 1.

##STR00090##

[0407] wherein EH=2-ethylhexyl and the COOEH group is connected via the C atom.

[0408] Table 1 shows the molecular weight of synthesized polymers P2-P6.

TABLE-US-00001 TABLE 1 Polymer Mn (kg/mol) Mw (kg/mol) PDI P2 29.6 67.6 2.3 P3 9.4 19.4 2.1 P4 12.8 40.0 3.0 P5 15.7 27.4 1.7 P6 15.8 56.0 3.5

Examples 7-12

Synthesis of 5,5′-benzo[1,2-b:4,5-b′]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2-bis(dodecyl) ester

[0409] ##STR00091##

[0410] In a two-neck 250 mL flask under inert atmosphere, compound dodecyl thiophene-2-carboxylate (5 g, 16.9 mmol) is dissolved in anhydrous tetrahydrofuran (40 cm.sup.3). A solution of fresh lithium diisopropylamine (8.45 cm.sup.3, 2 M, 16.9 mmol) is added dropwise at −78° C. After stirring for 1 hour, a solution of benzodithiophene-4,8-dione (1.06 g, 4.8 mmol, in tetrahydrofuran (30 cm.sup.3)) is added. The reaction mixture is stirred for 1 hour at 23° C. A solution of tin(II)-chloride dihydrate (7.7 g, 34 mmol) in 10% hydrochloric acid (3 cm.sup.3) is added, and the resulting mixture is stirred for 16 hours and poured into water and extracted with dichloromethane (3×50 cm.sup.3). The organic layer is washed with brine, and dried over magnesium sulphate. The crude product is purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to afford 0.82 g of product with a yield of 22%. .sup.1H-NMR (CDCl3, 400 MHz, ppm): δ 7.94 (s, 2H), 7.59 (d, 2H, J=5.6 Hz), 7.53 (d, 2H, J=5.6 Hz), 7.48 (s, 2H), 4.35 (t, 4H, J=6.4 Hz), 1.79 (m, 4H), 1.47 (br, 4H), 1.35 (br, 32H), 0.87 (m, 6H).

Synthesis of 5,5′-(2,6-dibromobenzo[1,2-b:4,5-b′]dithiophene-4,8-diyl)bis-2-thiophenecarboxylic acid, 2,2′-bis(dodecyl) ester

[0411] ##STR00092##

[0412] 5,5′-benzo[1,2-b:4,5-b]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2′-bis(dodecyl) ester (5.0 g, 6.4 mmol) is dissolved in dichloromethane (70 cm.sup.3) under inert atmosphere. A solution of bromine (2.15 g, 0.68 cm.sup.3, 13.44 mmol) in dichloromethane (10 cm.sup.3) is added dropwise at 0° C. The mixture is stirred for 16 hours at 23° C. and poured into water. The excess of bromine is quenched with sodium thiosulphate. The resulting solution is extracted with dichloromethane (3×50 cm.sup.3). The organic layer is washed with brine, and dried over magnesium sulphate. The crude product is purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to afford 5.69 g of product with a yield of 85%. 1H-NMR (CDCl3, 400 MHz, ppm): δ 7.91 (d, 2H, J=3.6 Hz), 7.54 (s, 2H), 7.40 (d, 2H, J=3.6 Hz), 4.35 (t, 4H, J=6.8 Hz), 1.79 (m, 4H), 1.43 (br, 4H), 1.35 (br, 32H), 0.87 (m, 6H).

Synthesis of 5,5′-benzo[1,2-b:4,5-b′]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2′-bis(octyl) ester

[0413] ##STR00093##

[0414] In a two-neck 250 mL flask under inert atmosphere, compound dodecyl thiophene-2-carboxylate (5.7 g, 23.7 mmol) is dissolved in anhydrous tetrahydrofuran (40 cm.sup.3). A solution of fresh lithium diisopropylamine (11.85 cm.sup.3, 2 M, 23.7 mmol) is added dropwise at −78° C. After stirring for 1 hour, a solution of benzodithiophene-4,8-dione (1.5 g, 6.75 mmol, in tetrahydrofuran (50 cm.sup.3)) is added. The reaction mixture is stirred for 1 hour at 23° C. A solution of tin(II)-chloride dihydrate (10.5 g, 46.5 mmol) in 10% hydrochloric acid (4.5 cm.sup.3) is added, and the resulting mixture is stirred for 16 hours and poured into water and extracted with dichloromethane (3×50 cm.sup.3). The organic layer is washed with brine, and dried over magnesium sulphate. The crude product is purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to afford 1.12 g of product with a yield of 25%.

Synthesis of 5,5′-(2,6-dibromobenzo[1,2-b:4,5-b′]dithiophene-4,8-diyl)bis-2-thiophenecarboxylic acid, 2,2′-bis(octyl) ester

[0415] ##STR00094##

[0416] 5,5′-benzo[1,2-b:4,5-b′]dithiophene-4,8-diylbis-2-thiophenecarboxylic acid 2,2′-bis(octyl) ester (6.0 g, 9.0 mmol) is dissolved in dichloromethane (50 cm.sup.3) under inert atmosphere. A solution of bromine (3.02 g, 1.0 cm.sup.3, 18.9 mmol) in dichloromethane (20 cm.sup.3) is added dropwise at 0° C. The mixture is stirred for 16 hours at 23° C. and poured into water. The excess of bromine is quenched with sodium thiosulphate. The resulting solution is extracted with dichloromethane (3×50 cm.sup.3). The organic layer is washed with brine, and dried over magnesium sulphate. The crude product is purified by column chromatography on silica gel with 40-60 petrol:dichloromethane (1:1) as eluent to afford 5.94 g of product with a yield of 80%. .sup.1H-NMR (CDCl3, 400M, ppm): δ 7.91 (d, 2H, J=3.6 Hz), 7.54 (s, 2H), 7.40 (d, 2H, J=3.6 Hz), 4.35 (t, 4H, J=6.8 Hz), 1.79 (m, 4H), 1.33 (br, 4H), 1.29 (br, 16H), 0.87 (m, 6H).

General Synthetic Procedure for Preparation of Polymers P7-P12:

[0417] Dibromo-compound (0.3 mmol), distannyl compound (0.3 mmol) and chlorobenzene (6 cm.sup.3) is placed in a 50 cm.sup.3 of two-neck flask. The mixture is purged with argon for 5 minutes, and then tetrakis(triphenylphosphine)palladium (0.03 mmol) is added. The mixture is purged with argon for another 5 minutes. Then the mixture is heated up to 110° C. under argon for corresponding time. After coo ling to 23° C., the reaction mixture is poured into methanol. The polymer is filtered and subjected to Soxhlet extraction with acetone, n-hexane and chloroform. The chloroform fraction is collected, concentrated and precipitated in methanol. The target polymer is collected by filtration and dried in vacuum to afford solid polymers.

[0418] Table 2 shows the reaction times required to achieve Polymers P7-P12.

TABLE-US-00002 TABLE 2 Reaction time Polymer (hours) Yield (%) P7 8 66 P8 6 74 P9 18 69  P10 25 65  P11 24 74  P12 31 70

[0419] The synthesis of Polymer P7 is shown below:

##STR00095##

[0420] The synthesis of Polymer P8 is shown below:

##STR00096##

[0421] The synthesis of Polymer P9 is shown below:

##STR00097##

[0422] The synthesis of Polymer P10 is shown below:

##STR00098##

[0423] The synthesis of Polymer P11 is shown below:

##STR00099##

[0424] The synthesis of Polymer P12 is shown below:

##STR00100##

Examples 13-16

[0425] The synthesis of Polymers P13-P16 is shown below:

##STR00101##

[0426] Polymerisation conditions for synthesis of P13-P16 are as follows:

[0427] Stannyl compound (0.2 mmol), dibromo compound (0.2 mmol) and chlorobenzene (5 cm.sup.3) are added into microwave vial, the mixture is purged with argon for 10 minutes. Next After, the 0.02 mmol of tetrakis(triphenylphosphine)palladium (0.02 mmol) is added, the mixture is purged with argon for 5 minutes. The vial is put into microwave reactor for 5 hours at 135° C. After cooling to room temperature, the reaction mixture is poured into vigorously stirred methanol (100 cm.sup.3). The polymer is purified by column using chloroform as eluent.

[0428] Table 3 shows the molecular weight of synthesized polymers P13-P16.

TABLE-US-00003 TABLE 3 Polymer R Mn PDI P13 Methyl Insoluble n/a P14 n-octyl 12.0 1.8 P15 n-hexyl 13.4 2.0 P16 n-butyl 11.4 2.1

Use Example A

[0429] Current-voltage characteristics are measured using a Keithley 2400 SMU while the solar cells are illuminated by a Newport Solar Simulator at 100 mW.Math.cm.sup.−1 white light. The solar simulator is equipped with AM1.5G filters. The illumination intensity is calibrated using a Si photodiode. All the device preparation and characterization is done in a dry-nitrogen atmosphere.

[0430] Power conversion efficiency is calculated using the following expression

[00001]$\eta =\frac{V_{\mathrm{oc}}\times J_s\times \mathrm{FF}}{P_{\mathrm{in}}}$

[0431] where FF is defined as

[00002]$\mathrm{FF}=\frac{V_{\max }\times J_{\max }}{V_{\mathrm{oc}}\times J_{\mathrm{sc}}}$

[0432] OPV device characteristics are obtained for a composition, which contains as donor a polymer of the above examples 1-6 or the polymer PBDB-T of prior art as shown below, and as acceptor the compound IT-4F (A2) or A3 as shown below, and is coated from an organic solution. Details of the solution composition are shown in Table 4 below.

##STR00102##

[0433] Comparison polymer PBDB-T and its preparation are disclosed in Adv. Mater. 2016, 28, 4734-4739.

##STR00103##

[0434] Acceptor A2 (IT-4F) and its preparation are disclosed in CN105315298 A.

##STR00104##

[0435] Acceptor A3 and its preparation are disclosed in PCT/EP2017/074951.

##STR00105##

[0436] Acceptor A4 and its preparation are disclosed in Joule 3, 1-12, 2019

A1: Blade-Coated Bulk Heterojunction Organic Photovoltaic Devices

[0437] Organic photovoltaic (OPV) devices are fabricated on pre-patterned ITO-glass substrates (13 Ω/sq.) purchased from LUMTEC Corporation. Substrates are cleaned using common solvents (acetone, iso-propanol, deionized-water) in an ultrasonic bath. A layer of commercially available aluminium zinc oxide (AlZnO, Nanograde) was applied as a uniform coating by doctor blade at 40° C. The AlZnO Films a re then annealed at 100° C. for 10 minutes in air. Active material solutions (i.e. polymer+acceptor) are prepared to fully dissolve the solutes at a 25 mg.Math.cm.sup.−3 solution concentration. Thin films are blade-coated in air atmosphere to achieve active layer thicknesses between 50 and 800 nm as measured using a profilometer. A short drying period follows to ensure removal of any residual solvent.

[0438] Typically, blade-coated films are dried at 70° C. for 2 minutes on a hotplate. Next the devices are transferred into an air atmosphere. On top of the active layer 0.1 mL of a conducting polymer poly(ethylene dioxythiophene) doped with poly(styrene sulfonic acid) [PEDOT:PSS Clevios HTL PV AI 4083 (Heraeus)] was spread and uniformly coated by doctor blade at 70° C. Afterwards Ag (100 nm) cathodes are thermally evaporated through a shadow mask to define the cells. The devices were subsequently heated at 120° C. for 5 minutes on a hot plate inside a N.sub.2 atmosphere.

[0439] Table 4 shows the characteristics of the individual photoactive formulations. The solvent is either chlorobenzene:1,8-diiodooctane at a 99.5:0.5 volume ratio (CB:DIO), chlorobenzene:3-phenoxytoluene at a 97:3 volume ratio (CB:3PT), chloroform:chloronaphthalene at 99.5:0.5 volume ration (CF:CN), o-xylene (oXyl), chlorobenzene (CB) or mesitylene (mes).

TABLE-US-00004 TABLE 4 Formulation characteristics Ratio Concen- Polymer: tration No. Acceptor Polymer Acceptor g/L Solvent C1 A2 PBDB-T 1.00:1.00 20 CB:DIO 1A A2 P1 1.00:1.00 20 CB:DIO C2 A3 PBDB-T 1.00:1.00 20 CB 1B A3 P1 1.00:1.00 20 CB 2 A3 P2 1.00:1.00 20 CB 3 A3 P3 1.00:1.00 20 CB 4 A3 P4 1.00:1.00 20 CB 5 A3 P5 1.00:1.00 20 CB 6 A3 P6 1.00:1.00 20 CB 7 A4 P1 1.00:1.00  8 CF:CN

A2: Inverted Device Properties

[0440] Table 5 shows the device characteristics for the individual OPV devices comprising a photoactive layer with a BHJ formed from the photoactive acceptor/polymer formulations of Table 4.

TABLE-US-00005 TABLE 5 Photovoltaic cell characteristics under simulated solar irradiation at 1 sun (AM1.5G). Average Performance Voc Jsc FF PCE No. Polymer mV mA .Math. cm.sup.−2 % % C1 PBDB-T 594 14.7 53.0 4.62 1A P1 724 15.3 56.8 6.27 C2 PBDB-T 508 14.4 40.3 2.95 1B P1 687 16.3 44.4 4.99 2 P2 595 9.6 35.8 2.05 3 P3 724 16.2 43.1 5.05 4 P4 668 16.2 41.7 4.55 5 P5 508 8.4 38.6 1.64 6 P6 661 15.6 39.0 4.06

[0441] The devices 1A and 1B with donor polymer P1 according to the present invention show a significant improvement in open circuit voltage (Voc), compared to devices C1 and C2 with donor polymer PBDB-T from prior art, regardless if the acceptor is A2 or A3. This is an advantage for module production.

A3: Spin-Coated Bulk Heterojunction Organic Photovoltaic Devices

[0442] Organic photovoltaic (OPV) devices are fabricated on pre-patterned ITO-glass substrates. Substrates are cleaned using common solvents (acetone, iso-propanol, deionized-water) in an ultrasonic bath and subsequently exposed to UV ozone. A layer of zinc oxide (ZnO) is applied as a uniform coating by spin coating as previously described in Adv. Mater. 2011, 23, 1679. Active material solutions (i.e. polymer+acceptor) are prepared to fully dissolve. Thin films are spin-coated in N.sub.2 atmosphere to achieve active layer thicknesses between 50 and 800 nm as measured using a profilometer. A short drying period follows to ensure removal of any residual solvent. On top of the active layer 10 nm of molybdenum oxide is uniformly coated by thermal evaporation in a vacuum at 3×10.sup.−4 Pa. Afterwards Al (100 nm) cathodes are thermally evaporated through a shadow mask to define the cells.

[0443] Optionally, for the purpose of optimization, the ZnO layer and the molybdenum oxide layer is replaced with a layer of conducting polymer poly(ethylene dioxythiophene) doped with poly(styrene sulfonic acid) [PEDOT:PSS] and a layer of PFN—Br [Chem. Mater., 2004, 16, 708], respectively. Both these layers are applied by spin coating.

A4: Spin-Coated Device Properties

[0444] Table 6 shows the device characteristics for the individual OPV devices comprising a photoactive layer with a BHJ formed from the photoactive acceptor/polymer formulations of Table 4.

TABLE-US-00006 TABLE 6 Photovoltaic cell characteristics under simulated solar irradiation at 1 sun (AM1.5G). Average Performance Voc Jsc FF PCE No. Interlayer materials mV mA .Math. cm.sup.−2 % % C1 ZnO/MoO.sub.3 777 19.2 61.3 9.14 1A PEDOT:PSS/PNF—Br 851 21.8 65.0 12.0 7 PEDOT:PSS/PNF—Br 835 24.9 68 14.17

[0445] Device 1A with donor polymer P1 according to the present invention and acceptor A2 shows a significant improvement in open circuit voltage (Voc) and PCE compared to device C1 with donor polymer PBDB-T of prior art and acceptor A2. This is an advantage for module production.