MICROCHANNEL PLATE AND METHOD OF MAKING THE MICROCHANNEL PLATE WITH METAL CONTACTS SELECTIVELY FORMED ON ONE SIDE OF CHANNEL OPENINGS

Abstract

A night vision system, a microchannel plate (MCP), and a planetary deposition system and methodology are provided for selectively depositing an electrode contact metal on one side of MCP channel openings. One or more MCPs can be releasably secured to a face of a platter that rotates about its central platter axis. The rotating platter can be tilted on a rotating ring fixture surrounding an evaporative source of contact metal. Therefore, the rotating platter further rotates so that it orbits around the evaporative source of contact metal. A mask with a variable size mask opening is arranged between the rotating platter and the evaporative source. While the mask orbits around the evaporative source with the rotating platter, the mask does not rotate along its own axis as does the rotating platter.

Claims

1. A night vision system, comprising: an image intensifier tube placed between a lens and an eyepiece, wherein the image intensifier tube comprises: a photocathode; a phosphor covered anode; and a microchannel plate arranged a spaced distance between the photocathode and the phosphor covered anode, wherein the microchannel plate comprises a spaced plurality of channel openings facing the photocathode with contact metal evaporatively deposited through a mask opening on first side of the channel openings to draw first strike electrons produced from a second side of the channel openings radially opposite the first side.

2. The night vision system of claim 1, wherein the contact metal is coupled to a voltage supply to generate an electric field to draw first strike electrons from each of the channel openings through each corresponding channel.

3. The night vision system of claim 1, wherein the channel openings are funnel shaped channel openings that decrease in diameter from an input surface of the microchannel plate facing the photocathode to a first distance from the input surface.

4. The night vision system of claim 1, wherein the microchannel plate comprises a plurality of channels, each having a channel central axis that is biased a channel bias angle between 5 and 16 degrees relative to the normal to the microchannel plate surface facing the photocathode.

5. The night vision system of claim 1, wherein the photocathode is configured to produce primary electrons that strike primarily the second side of the channel openings and produce the first strike electrons solely from the second side.

6. The night vision system of claim 1, wherein the second side of each of the plurality of channel openings is substantially void of any contact metal.

7. The night vision system of claim 1, wherein the first side of each of the plurality of channel openings is less than one half a circumferential distance around each of the plurality of channel openings, and wherein the second side of each of the plurality of channel openings is less than one half a circumferential distance around each of the plurality of channel openings radially opposite the first side.

8. A system for depositing contact metal on a microchannel plate, comprising: an evaporative source of contact metal; a platter having a platter central axis, wherein the platter is configured to retain the microchannel plate and to rotate around the platter central axis while tilted and to also rotate around the evaporative source; and a mask arranged between the platter and the evaporative source, wherein the mask comprises a mask opening to expose to the evaporative source only a first side of each of a plurality of channel openings within the microchannel plate.

9. The deposition system of claim 8, wherein the platter is tilted at a first angle φ1 relative to a first axis, and wherein the platter central axis is further configured to rotate around the evaporative source at a second angle φ2 relative to a second axis, and wherein the second axis is perpendicular to the first axis.

10. The deposition system of claim 8, wherein the channel openings extend along respective channel central axes, each of which are biased at a channel bias angle extending from the channel openings along respective channel central axes and toward the platter central axis to receive, upon activation of the evaporative source, contact metal through the mask opening and onto only the first side of the channel openings.

11. The deposition system of claim 10, wherein the channel bias angle is between 5° to 16° relative to the normal of an input surface of the microchannel plate.

12. The deposition system of claim 9, wherein the first and second angles are adjustable to correspondingly adjust an amount of the contact metal deposited into the channel openings.

13. The deposition system of claim 8, wherein the first side of each of the plurality of channel openings is no more than one half a circumferential distance around each of the plurality of channel openings, and wherein a second side of each of the plurality of channel openings is no more than one half a circumferential distance around each of the plurality of channel openings radially opposite the first side.

14. The deposition system of claim 8, wherein the mask opening is adjustable from a wedge shaped opening to a semi-circular shaped opening to correspondingly adjust the circumferential exposure size of the first side of each of the of channel openings radially around the respective channel central axes to the evaporative source.

15. The deposition system of claim 14, wherein the wedge shaped opening produces contact metal on less than one half a circumferential distance around each of the plurality of channel openings, and a semi-circular shaped opening produces contact metal on approximately one half a circumferential distance around each of the plurality of channel openings.

16. The deposition system of claim 8, wherein the channel openings are funnel shaped channel openings that decrease in diameter from an input surface of the microchannel plate to a first distance from the input surface.

17. A deposition method for selectively depositing contact metal into a channel of a microchannel plate, comprising: securing the microchannel plate onto a platter; rotating the platter about its platter central axis; tilting the platter; rotating the platter about an evaporative source of contact metal while maintaining a mask opening in a stationary position relative to the rotating platter and between the rotating platter and the evaporative source; and activating the evaporative source to selectively deposit contact metal into the channel.

18. The deposition method of claim 17, wherein the securing comprises: arranging a channel central axis of the channel to extend from a channel opening along the respective channel and toward a platter central axis to receive, upon activation of the evaporative source, contact metal through the mask opening and onto only a first side of the channel openings.

19. The deposition method of claim 17, wherein the tilting and rotating comprise: tilting the platter at a first angle φ1 relative to a first axis; and rotating the platter at a second angle φ2 relative to a second axis, and wherein the second axis is perpendicular to the first axis.

20. The deposition method of claim 18, further comprising before the securing: forming glass cores surrounded by respective glass cladding at the channel central axis relative to opposing surfaces of microchannel plate; etching the glass cladding at the boundary between the glass cores and the surrounding glass cladding to a first distance into the plate; and etching the glass cores to remove the cores entirely from the remaining glass cladding leaving a funnel shaped plurality of spaced channels.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Examples of the present disclosure are best understood from the following detailed description when read in connection with the accompanying drawings. According to common practice, the various features of the drawings are not drawn to scale, or are only shown in partial perspective. The dimension of the various embodiments are shown arbitrarily expanded or reduced for clarity. Like numerals are used to represent like elements among the drawings. Included in the drawings are the following features and elements, and reference will now be made to each drawing in which:

[0023] FIG. 1 is a partial block diagram of a night vision system utilizing an image intensifier tube having a MCP;

[0024] FIG. 2 is a partial top view of a MCP along section 2-2 of FIG. 1;

[0025] FIG. 3 is a partial cross sectional view along section 3-3 of FIG. 2, showing each channel central axis aligned at a CBA, and a first strike angle at which the primary electrons strike the showered first strike side of each channel wall near each channel opening;

[0026] FIG. 4 is a partial cross sectional view of contact metal advantageously formed only on the shaded first side of example funnel shaped channel openings radially opposite the showered second side of the funnel shaped channel openings that are void of any contact metal;

[0027] FIG. 5 is a front view of the contact metal and the depth and circumferential dimensions of the contact metal selectively and adjustably formed on the first side of a channel opening;

[0028] FIG. 6 is a partial cross sectional view of the glass core and cladding at an early fabrication of funnel shaped openings of MCP channels;

[0029] FIG. 7 is a partial cross sectional view of the segment of FIG. 6 after selective etching of the glass cladding at the core and cladding boundary;

[0030] FIG. 8 is a partial cross sectional view of the segment of FIG. 7 after etching the glass core to entirely remove the core from the cladding;

[0031] FIG. 9 is a partial cross sectional view of the segment of FIG. 8 after forming contact metal along the shaded first side of the funnel shaped openings;

[0032] FIG. 10 is a top side view of a planetary deposition system for selectively depositing contact metal on the input face of MCPs mounted on multiple platters surrounding an evaporative source of contact metal, and specifically a deposition system for selectively depositing contact metal on the shaded first side of channel openings;

[0033] FIGS. 11a, 11b and 11c are top views of an adjustable mask opening, and in particular a semi-circular shaped mask opening, a wedge shaped mask opening and opposing wedge shaped mask opening, respectively;

[0034] FIG. 12 is a top plan view of a plurality of MCPs mounted on a surface of a platter with their vector CBAs directed toward the platter central axis;

[0035] FIG. 13 is a partial cross-sectional of a MCP along portion 13-13 of FIG. 12 showing the CBA of each of the channels directed toward the platter central axis;

[0036] FIG. 14 is a side view of the planetary deposition system showing the mask with its opening arranged between the tilted, rotating and orbiting MCP-mounted platter resulting in contact metal on the oblique or shaded first side channel openings that face, or are in the line of sight of, the evaporative source; and

[0037] FIG. 15 is a top view as seen from the evaporative source with the MCP-mounted platter rotating beneath a mask opening to expose to the evaporative source only the shaded first side of each of the plurality of channel openings depending on the adjustable size of the mask opening and the adjustable tilt and orbital angles.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

[0038] The following discussion is directed to various example embodiments. However, one of ordinary skill in the art will understand that the examples disclosed herein have broad application, and that the discussion of any embodiment is meant only to be exemplary of that embodiment, and not intended to suggest that the scope of the disclosure, including the claims, is limited to that embodiment.

[0039] As noted above, the drawing figures are not necessarily to scale. Certain features and components herein may be shown exaggerated in scale or in somewhat schematic form and some details of conventional elements may not be shown in interest of clarity and conciseness.

[0040] In the following discussion and in the claims, the terms “including” and “comprising” are used in an open-ended fashion, and thus should be interpreted to mean “including, but not limited to . . . .” Also, the term “couple” or “couples” is intended to mean either an indirect or direct connection. Thus, if a first device couples to a second device, that connection may be through a direct connection of the two devices, or through an indirect connection that is established via other devices, components, nodes, and connections. In addition, as used herein, the terms “axial” and “axially” generally mean along or parallel to a given axis (e.g., x, y or z direction or central axis of a body, opening, channel, outlet or port), while the terms “radial” and “radially” generally mean perpendicular to the given axis. For instance, an axial distance refers to a distance measured along a central axis, and a radial distance means a distance measured perpendicular to the central axis. Radially opposite can mean on opposite sides of the central axis and in an arcuate pattern only partially around and spaced an axial distance from the central axis.

[0041] Referring now to FIG. 1, a partial block diagram of a night vision system 12 is shown. Night vision system 12 comprises an image intensifier tube 14 placed between a pair of lenses 16 and 18. Lens 16 can be a focusing lens that focuses photons from object 15 onto image intensifier 14. Lens 18 can be an eyepiece that directs the outgoing photons produced from image intensifier 14 onto a user's eye. The night vision system 12 can be, for example, goggles, where eyepiece 18 can include two eyepieces.

[0042] Image intensifier 14 can be a vacuum tube and is fairly well known, based on Generation-III (GaAs photocathode) or Generation-II (multi-alkali photocathode) image intensifier fiber. Within the image intensifier tube 14 is a photocathode 20. Photocathode 20 may comprise a faceplate made of glass and coated with GaAs on a backside surface of the faceplate. Other type III-V materials can be used such as GaP, GaIn, AsP, InAsP, InGaAs, etc. Alternatively, photocathode 20 may be known as Bi-alkali photocathode. Photoemissive semiconductor material of photocathode 20 absorbs photons arriving on a photon receiving face of image intensifier tube 14. Photons absorb by photocathode 20 cause the carrier density of the semiconductor material to increase, thereby causing the material to generate a photocurrent of electrons 21 emitted from the backside electron emission face of photocathode 20.

[0043] Photocathode 20, according to one example, converts non-visible or visible low light sources. The non-visible light sources can be near infrared or short wave infrared to visible. An electron multiplier 22 receives electrons 21, and multiplies those electrons to produce multiplied electrons 23. A popular electron multiplier includes a microchannel plate (MCP). MCP 22 is typically formed through a plurality of glass fibers, each having a core surrounded by an exterior glass cladding. Each of the plurality of cores can be removed, leaving a spaced plurality of microchannels, or “channels” from the input face to the output face of the MCP. The inside walls or sides of each channel opening has a high electron emissivity coefficient to produce a shower of secondary electrons. The channels are spaced from each other and extend from the input planar surface, or input face, to the output planar surface, or output face, where multiplied electrons are emitted. The secondary emission electrons amplify the electrons produced by the photocathode in response to initial low light level images. The shower of electrons are produced at an intensity greater than that produced by the photocathode, and therefore the MCP 22 has amplification and gain.

[0044] Voltage sources can be applied between the various elements of image intensifier 14 to draw electrons from photocathode 20 to MCP 22, through MCP 22, and from the backside emissions surface of MCP 22 onto anode 24. The voltage sources produce an electrostatic field that draws both primary and secondary electrons through image intensifier 14 to impart the desired energy to the multiplied electrons applied to the phosphor covered screen, or anode 24. The phosphor-covered screen converts the multiplied electron pattern initiated from photocathode 12 to a visible light image of the initially received low level image from target 15. The emitted photons are directed by optics, such as a fiber optic bundle of anode 24 from image intensifier 14 onto eyepiece 18. When viewing through eyepiece 18, a user can discern low level visible or non-visible photons reflected or generated from target image 15 through use of the amplified gain and electron multiplication of MCP 22.

[0045] Turning now to FIG. 2, a top view, when viewed from photocathode 20 of MCP 22 is illustrated. Specifically, the top view along section 2-2 of FIG. 1 is illustrated. A plurality of channels extend entirely though MCP 22. Each channel 26 includes adjoining openings on the input and output sides of MCP 22. Since MCP 22 is shown in FIG. 2 from the photocathode side, the input side or input face is therefore the electron receiving side that receives primary electrons 21 from photocathode 20, as shown in FIG. 1. Each channel 26, along with the input and output openings thereof is preferably the same diameter among channels and openings. The channel 26 dimensions are therefore preferably consistent across MCP 22. The pitch or spacing between channels 26 should also be consistent. Due to flaws in composition, fabrication, etch and cleaning of the channel sides, some channels 26 may be larger in diameter than others, causing non-uniform multiplied electron emissions on the output face of MCP 22. Moreover, such flaws can create etch-through of the channel sides or walls, leading to points in the glass surface that become emission points. It is desirable that the ratio of opening area to the space between openings have an open area ratio (OAR) as high as possible. Conventional, non-funneled channels have an OAR less than 70% due to the need for retaining sufficient channel wall material between openings to maintain the overall structural strength required of an MCP.

[0046] Turning now to FIG. 3, a cross-sectional view of plane 3-3 of FIG. 2 is shown. FIG. 3 illustrates in more detail the plurality of channels 26 within the honeycomb structure of MCP 22. The channels provide a fairly reliable electron multiplier provided the channels 26 are properly slanted or biased at an optimal CBA. An electric field is created between the voltage source V.sub.s supplied to contact metal 30 applied across the input face and contact metal 32 applied continuously across the output face. The channels 26 are the openings that therefore exist between the input and output faces of MCP 22, which can be scrubbed to remove any remaining impurities which could inhibit secondary emissions or produce positive ion bombardment of the photocathode. The accelerating electrostatic fields through each channel 26 occur by applying contact metal on the input and output faces and biasing the contact metal with the voltage supply V.sub.s, wherein the contact metal can include a good conductive material such as Inconel or Nichrome. A contact metal 30 and 32 can extend partially into the channel. The slant angle, or CBA, is taken along the central axis of the channels 26 and is substantially identical across each channel 26 since the channels are parallel to one another. The CBA can be between 5° and 16° relative to the normal of the MCP planar input face.

[0047] The electrons 21 sent from photocathode 20 (FIG. 1) strike a side of each channel 26 at a first strike angle (FSA). The electrons sent from photocathode 20 are herein referred to as primary electrons 21. Since secondary electrons are generated from the first strike of primary electrons 21, the secondary electrons resulting from the first strike of primary electrons 21 are herein referred to as first strike electrons. The first strike electrons are only those produced from the primary electrons strike. The first strike electrons 36 include both secondary electrons as well as possibly the primary electron. Subsequent strikes created from the produced secondary electrons further down each channel are secondary electron strikes but are not referenced as first strike electrons since first strike electrons are reserved only for those electrons produced by the first strike of primary electrons from the photocathode. The secondary electrons, either from the first strike electrons or from subsequently created secondary strike electrons, are biased down each channel 26 where even further tertiary, etc., strike electrons occur on the opposing arcuate surfaces surrounding an axial center of those channels to further increase the multiplying effect. While multiple strikes can occur from the input surface to the output surface of each channel and multiplied electrons with gain can result, the very first strike of only the primary electron 21 produces the first strike electrons 36. It is understood that each channel 26 produces first strike electrons 36 from the first strike of primary electrons 21 at a first strike angle FSA relative to the channel bias angle—the FSA being normal to the input face of the MCP 22. The first strike angle, while normal to the input face of MCP 22, is at an acute angle relative to CBA. Accordingly, CBA is preferably between 5 and 16 degrees, and more preferably between 5 and 8 degrees relative to normal of the MCP input surface.

[0048] The overall electron multiplication, amplification, and gain of MCP is in large part dependent on the mean number of electrons produced in response to an input event. Those electrons produced in response to an input event, or first strike electrons 36 produced in response to a primary electron 21 input event, will have significant impact on the overall performance of the MCP 22. As will be noted below, in reference to FIG. 4, one way to increase the production of first strike electrons 36 is to selectively apply contact metal in regions where the first strike electrons are typically not produced, and to increase the surface area where the first strike electrons are produced. MCP 22 now commercially available generally have a thickness of 20 mils or less. Channel 26 cross-sectional diameters are generally 3-8 microns.

[0049] Inconsistencies in either the pitch or diameter of the core leads to a percentage of channels that are larger than others, and unduly large electron emission points can form in those enlarged channels. The electron emission intensity values will therefore increase where there are more opportunities for first strike electrons to be formed in the channel with the larger diameters. The greater intensity, however, is localized in a very small number of pixels read by the phosphor covered optical fibers. Another cause for increased, localized intensity whenever channel diameters are inconsistent leads to a greater opportunity for first strike electrons impacting the input side contact metal 30 to reflect or bounce from the contact metal and into larger channels or channels caused by etch through of a neighboring channel. The uneven and periodically sharp electron emission points form from uneven channel diameters or channels enlarged due to neighboring channels merged together via cladding etch through. One technique in which to increase OAR, SNR and MTF of the MCP 22 is to shape the channel openings 26 into a funnel or tapered opening.

[0050] Differences in first strike angle (FSA) can depend on whether the channel opening is funnel shaped (tapered) or not tapered. The first strike angle is relative to the channel biased angle, wherein the first strike angle is typically normal to the input face of the MCP, whereas the CBA is the angle along the central axis at which each parallel-spaced channel extends. Because each channel is biased at CBA, CBA is also considered relative to normal of the input face. An increased number of first strike electrons results from an increased number of primary electrons that strike the showered side of the channel given the side of the channel opening is tapered rather than non-tapered. By tapering the showered side of the channel more towards normal, a greater number of first strike electrons can be produced thereby increasing the efficiency of the MCP. While increasing the surface area of the showered side surface increases the performance of the MCP, placement of contact metal on that surface can have deleterious effects. Accordingly, it is beneficial to combine a funnel shaped channel opening with selectively placed contact metal not on the showered surface but instead on a shaded surface of the channel opening as shown in FIG. 4.

[0051] FIG. 4 illustrates formation of contact metal 30 on the input or electron receiving surface of MCP 22 and only on the shaded first side of the channel openings 26. A shaded side of the channel openings is not in a perpendicular line of sight relationship with funnel shaped openings of channels 26. In the area of initial electron impact (i.e. primary electron 21 impact), the inner surface of channel 26 has a high secondary electron emissivity coefficient that will purposefully not be coated with low electron emissivity conductive material of contact metal 30. Electron amplification of channels 26 begins immediately upon impact on the showered second side of channels 26 rather than being delayed until the second or third strike of secondary electrons occurs. If the primary electrons were to contact the metallization material on the showered side, the metal would absorb and not produce sufficient first strike electrons, and therefore would lessen amplification within channels 26. Contact metal is purposefully placed only on the shaded, or first side, of each channel 26. According to one example, contact metal 30 is purposefully placed on the channel opening, either tapered or not, a distance less than ¾ D along the side of the channel, that distance D being the channel diameter after the taper or funnel no longer exists—if the channel opening is tapered.

[0052] Forming contact metal 30 on the input face of the MCP but only on the shaded first side of that opening (tapered or not) allows sufficient production of electrostatic field 42 which, in essence, efficiently pushes or electrostatically biases first strike electrons 36 produced from the showered second side downward further into the channel 26. A carefully selected placement of the contact metal 30 into only the shaded first side therefore maximizes first strike efficiency, with a significant electrostatic field 42 production and more effective secondary electron strike production further down each channel.

[0053] As noted in FIG. 5, the surface area along plane 5-5 of FIG. 4 illustrates contact metal on the first side of channel 26. The contact metal 30 on the shaded first side of channel extends from the input face of the MCP downward into each channel no more than ¾ D, as measured past the funnel opening, if the opening is funnel shaped.

[0054] Turning now to FIG. 6 through FIG. 8, a method is shown for producing an MCP. For sake and ease of illustration, the to-be-formed channels are not shown biased along a channel bias angle. However, it is understood that the channels would nonetheless be biased at the appropriate channel bias angle to maximize electron amplification and gain. FIG. 6 illustrates a plurality of glass cores surrounded by respective glass cladding arranged at a first angle relative to opposing surfaces of the ensuing MCP. For brevity in the drawing, only two glass cores 52 are shown, each surrounded by its own glass cladding 54. Core 52 can be made of alkali-resistant, acid-soluble glass, whereas cladding 54 can be made from alkali-soluble, acid resistant glass.

[0055] Turning to FIG. 7, the alkali material of the etched composition can preferentially etch a portion of the cladding 54, and specifically at the core/clad interface to produce grooves into the input plate surface of the MCP input face. Each groove 60 can extend a distance D into that interface. It is recognized that the core/clad interface undergoes substantial mechanical stress when the glass fibers are formed, so that certain types of etched composition like sodium hydroxide can attack the exposed interface due to the high chemical and mechanical stress in that region. To produce a funnel shaped opening for each channel, the interface zone is exposed only at the input and output ends of the channel with the core 52 still in place. For simplicity in the drawings, only the input face of the channel openings are shown, and only for two channels.

[0056] Next, as shown in FIG. 8, the glass cores 52 are etched preferentially with an acid de-core process using, for example, an acid-based etch composition. After the cores 52 are removed, as shown in FIG. 8, hollow channels 26 openings extend entirely through the MCP from the input face to the output face, with at least the input face having funnel shaped openings for each channel 26. The funnel shaped openings therefore have tapered sidewall surfaces extending a distance D into each channel, where D is substantially the same as the diameter of the channel 26 measured at a point further into the channel from the funnel shaped opening.

[0057] Turning now to FIG. 9, the contact metal 30 is shown exclusively along the shaded first side of the plurality of spaced channel openings 26. According to one example, the channel openings 26 can be funnel shaped as shown in FIG. 9. Contact metal 30 is formed on each of the first sides of the channel openings down along the sides of the openings and into the openings between no more than ¾ D. It is appreciated that although FIG. 9 illustrates channels in a vertical orientation for simplicity in the drawings, channels 26 are nonetheless biased at a CBA. The primary electrons 21 strike only the second, or showered side 31a of the channel openings. Primary electrons 21 strike along that showered side 31a that extends from the opening a first distance into the channel. If the channel openings are funneled, the first distance can correspond the portion of the funnel shape that is tapered. Primary electrons 21 strike the second side 31a of each opening exclusively on, for example, the taper of that opening, and specifically radially opposite the first side on which contact metal 30 is formed. Accordingly, first strike electrons 36 are beneficially derived in the most efficient geometric position of the opening at a tapered angle closer to normal of the microchannel plate input surface facing the photocathode.

[0058] An evaporation window appears so that the contact metal deposition can take place along a line of sight 62 between an evaporation source and the exposed first side 31b on which contact metal 30 is deposited. The contact metal 30 is deposited using a planetary deposition system and method described further in reference to FIGS. 10-15.

[0059] Turning now to FIG. 10, a top side view of a planetary deposition system 70 is shown. Deposition system 70 utilizes a series of platters 72 surrounding an e-beam evaporation source 74. The evaporation source 74 (or other line of sight thin film deposition source) evaporates a source material such as Inconel or Nichrome of contact metal in a vacuum and directs the vapor particles of contact metal to a target object, which is a plurality of MCPs 22 mounted on a face of each platter 72. Upon contact with the MCP 22, the sourced contact metal then condenses back to a solid state. The MCPs 22 are mounted onto a corresponding platter 72, and each platter 72 is configured to rotate 76 about its central axis 78. Each platter 72 is configured to rotate about its platter central axis 76 while mounted onto a ring fixture 80. The ring fixture 80 rotates 82 about its central axis, preferably where the evaporative source 74 resides. The deposition system 70, comprising a rotating platter 72 that rotates around its central axis 78 that further rotates around the evaporative source 74 placed at the axial center of the ring fixture 80. The evaporative source 74, which arranged at the axial center of the ring fixture 80 can be along the central axis of the fixture 80 upward or downward from the ring fixture plane. The planetary deposition system 70 therefore comprises a system for depositing contact metal on MCP 22 both uniformly as well as selectively on the MCP input face, and partially into each channel opening at the input face. For sake of brevity and clarity in the drawing, FIG. 10 does not show a mask configured between the evaporative source 74 and each platter 72. However, FIG. 11 illustrates such as mask.

[0060] FIG. 11a is a top view of a platter 72 partially covered with a mask 82a. Mask 82a comprises any material that blocks evaporation or deposition of a source material upon a target material. Mask 82a can be any shape provided it covers platter 72, except only where there is an opening 84a in mask 82a. Mask 82a is arranged between the evaporative source 74 and the platter 72, and opening 84a is stationary whereas platter 72 rotates 76 about its platter central axis 78. Preferably the mask 82a is arranged as close as possible to the platter 72 to maximize deposition placement control, and is preferably less than several inches in front of platter 72 to achieve this goal. The mask opening 84a is shown in FIG. 11a as a semi-circular shape. The semi-circular shape will correspondingly form contact metal 30 in a semi-circular, arcuate, circumferential distance on the shaded first side 31b of each channel opening as will be described further hereinbelow.

[0061] FIG. 11b is also a top view of a platter 72 partially covered with a mask 82b. The mask 82b includes an opening 84b that is wedge shaped. The wedge shape will corresponding form contact metal 30 in a less than semi-circular, arcuate, circumferential distance around on the shaded first side 31b. The circumferential distance around the first side 31b is dependent on the size of the wedge, and in particular, the length of the triangle side 88a of opening 84b. FIG. 11c illustrates a smaller wedge shaped opening 84c and a commensurate shorter length of the triangle side 88b of opening 84c. The mask 82c with opening 84c will therefore produce a lesser circumferential distance around the first side 31b then mask 82b with opening 84b, and certainly less than the circumferential distance around the first side 31b then mask 82a with semi-circular opening 84a. Also, as noted in FIG. 11c, there can be two openings 84c to illustrate that the contact metal can be deposited in a number of different ways, possibly other than on a shaded side and possibly twice per rotation of the platter 72 around its central axis 78.

[0062] FIG. 12 is a top plan view of a plurality of MCPs 22 mounted on a surface of each platter 72. In part, to achieve deposition on only the shaded first side 31b, the CBA and specifically the vector of the CBA for each channel must be directed (or biased) 90 toward the platter central axis 78. Since the core and cladding of each channel that forms the MCP 22 is produced in unison, each with the same CBA vector extending in the same direction, the MCPs on each platter can be arranged so the CBA for each channel looking downward into each channel are positioned so that the CBAs of each channel for each MCP mounted on platter 72 are directed as shown by arrow 90.

[0063] FIG. 13 is a partial cross-sectional view of a MCP along portion 13-13 of FIG. 12 showing the CBA of each of the channels 26 directed toward the platter central axis 78. In particular the channel openings of each MCP is arranged on the platter 72 so they are biased at a CBA. The CBA extends from the channel openings along respective channel central axes and toward the platter central axis 78 to receive, upon activation of the evaporative source 74, contact metal 30 through the mask opening 84a, 84b or 84c and onto only the shaded first side 31b and not the showered second side 31a. For sake of brevity and clarity, FIG. 13 only shows two channels 26 and the corresponding first and second sides 31b and 31a, respectively, of those channel openings. It is understood that each MCP contains upwards of a thousand or more channels, however.

[0064] FIG. 14 is a partial side plan view of the planetary deposition system 70 showing the mask 82 with its opening 84 arranged between the tilted, rotating and orbiting MCP-mounted platter 72, resulting in contact metal 30 deposited on the oblique or shaded first side 31b of channel openings that face, and are in the line of sight of, the evaporative source 74. Keeping in mind that as the platter 72 rotates, the position of the mask opening 84 changes relative to the MCP channels, and the channel openings in particular. By varying the amount or angular degree of the mask opening 84, the circumferential distance around the channel opening at which the contact metal 30 is deposited on the first side 31b will vary commensurate thereto. FIG. 14 illustrates a further variance in the depth at which the contact metal can be deposited into each channel opening. For example, changing the tilt first angle φ1 relative to a first axis 94 can vary the depth of deposition. Decreasing first angle φ1 can increase the depth of deposition. Also, for example, changing the angle of rotation around the evaporative source 74 second angle φ2 relative to second axis 96 can vary the depth of deposition. Decreasing second angle φ2 can decrease the depth of deposition. The first and second axes 94, 96 can be perpendicular to each other. The first axis 94 can be a vertical axis and the second axis 96 can be a horizontal axis, for example. The tilt first angle φ1 relative to a first axis 94 is preferably in the range of 0 to 15°, and the rotating or orbiting second angle φ2 relative to the second axis 96 is preferably in the range of 65 to 80°.

[0065] FIG. 15 is a top plan view as seen from the evaporative source 74. The MCP-mounted platter 72 is shown in phantom rotating behind a mask 82, and more particularly an opening 84 within mask 82. The amount of opening 84 can be adjusted to commensurately change the circumferential distance 98 along the first side 31b exposed to the evaporative source 74. Using planetary motion with both the ring fixture and the platter rotating, allows for a more uniform deposition of contact metal 30 on only the first side 31b. Also, importantly, using a mask 82 that is fixed to and rotates with the ring fixture and remains in front of the platter, but does not rotate with the platter about its own axis or the platter central axis, selectively places the contact metal circumferentially around the first side 31b. The MCP electrode is therefore deposited on the first side channel wall as dictated by the mask design and opening configuration. The mask opening provides fully configurable circumferential coverage and location of the contact metal into the channel opening, provides deposition uniformity as each MCP is exposed to the same deposition and provides improved electrode contact metal conductivity as compared to any non-rotation methodology. The planetary deposition system and method therefore combines the high yield afforded by rotation contact metal deposition via an adjustable mask with an increased MCP SNR performance.

[0066] It is important to note that the construction and arrangement of the various example embodiments are illustrative only. Although only a few embodiments have been described in detail in this disclosure, those skilled in the art who review this disclosure will readily appreciate that many modifications are possible (e.g., variations in sizes, dimensions, structures, shapes and proportions of the various elements, values of parameters, mounting arrangements, use of materials, colors, orientations, etc.) without materially departing from the novel teachings and advantages of the subject matter described herein. For example, elements shown as integrally formed may be constructed of multiple parts or elements, the position of elements may be reversed or otherwise varied, and the nature or number of discrete elements or positions may be altered or varied. The order or sequence of any process or method steps may be varied or re-sequenced according to alternative embodiments. Additionally, features from particular embodiments may be combined with features from other embodiments as would be understood by one of ordinary skill in the art. Other substitutions, modifications, changes and omissions may also be made in the design, operating conditions and arrangement of the various example embodiments without departing from the scope of the present invention.

[0067] As used herein, the terms “about,” “approximately,” substantially,” “generally,” and the like mean plus or minus 10% of the stated value or range. In addition, as used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. The term “and/or” includes any and all combinations of one or more of the associated listed items. For example, reference to “a feature” includes a plurality of such “features.” The term “and/or” used in the context of “X and/or Y” should be interpreted as “X,” or “Y,” or “X and Y”.

[0068] The illustrated embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be used, and other changes may be made, without departing from the spirit or scope of the subject matter presented herein. Additionally, particular aspects of each embodiment may also be used in conjunction with other embodiments of the present disclosure and thus, the disclosed embodiments may be combined as understood in the art. It will be readily understood that the aspects of the present disclosure, as generally described herein, and illustrated in the figures, can be arranged, substituted, combined, separated, and designed in a wide variety of different configurations, all of which are explicitly contemplated herein.

[0069] It should be noted that any use of the term “example” herein to describe various embodiments is intended to indicate that such embodiments are possible examples, representations, and/or illustrations of possible embodiments (and such term is not intended to connote that such embodiments are necessarily extraordinary or superlative examples). Further, as utilized herein, the term “substantially” and similar terms are intended to have a broad meaning in harmony with the common and accepted usage by those of ordinary skill in the art to which the subject matter of this disclosure pertains. It should be understood by those of skill in the art who review this disclosure that these terms are intended to allow a description of certain features described and claimed without restricting the scope of these features to the precise numerical ranges provided. Accordingly, these terms should be interpreted as indicating that insubstantial or inconsequential modifications or alterations of the subject matter described and claimed (e.g., within plus or minus five percent of a given angle or other value) are considered to be within the scope of the invention as recited in the appended claims. The term “approximately” when used with respect to values means plus or minus five percent of the associated value.

[0070] The terms “coupled” and the like as used herein mean the joining of two members directly or indirectly to one another. Such joining may be stationary (e.g., permanent) or moveable (e.g., removable or releasable). Such joining may be achieved with the two members or the two members and any additional intermediate members being integrally formed as a single unitary body with one another or with the two members or the two members and any additional intermediate members being attached to one another.

[0071] It should be noted that although the diagrams herein may show a specific order and composition of method steps, it is understood that the order of these steps may differ from what is depicted. For example, two or more steps may be performed concurrently or with partial concurrence. Also, some method steps that are performed as discrete steps may be combined, steps being performed as a combined step may be separated into discrete steps, the sequence of certain processes may be reversed or otherwise varied, and the nature or number of discrete processes may be altered or varied. The order or sequence of any element or apparatus may be varied or substituted according to alternative embodiments. Accordingly, all such modifications are intended to be included within the scope of the present disclosure as defined in the appended claims.

[0072] Without further elaboration, it is believed that one skilled in the art can use the preceding description to utilize the claimed inventions to their fullest extent. The examples and embodiments disclosed herein are to be construed as merely illustrative and not a limitation of the scope of the present disclosure in any way. It will be apparent to those having skill in the art that changes may be made to the details of the above-described embodiments without departing from the underlying principles discussed. In other words, various modifications and improvements of the embodiments specifically disclosed in the description above are within the scope of the appended claims. For example, any suitable combination of features of the various embodiments described is contemplated.