INTEGRATED PHOTONIC APPARATUS AND METHOD
20230387666 · 2023-11-30
Inventors
Cpc classification
H01S5/50
ELECTRICITY
H01S5/0657
ELECTRICITY
H01S5/141
ELECTRICITY
International classification
H01S5/50
ELECTRICITY
H01S5/065
ELECTRICITY
H01S5/10
ELECTRICITY
H01S5/026
ELECTRICITY
Abstract
A fully integrated photonic coherent microwave generator includes an external laser cavity on a suitable material waveguide platform (e.g., LiNbO3) operationally integrated with a III-V gain element. Operational components include a tunable high-Q resonator (e.g., LiNbO3 microresonator) and one or more end mirrors to form an integrated semiconductor external-cavity laser. Operationally coupled electrical components enable coherent microwave and phase-locked laser comb outputs as follows. An optical detector converts the beating of generated laser-comb modes into microwaves with a fundamental frequency equal to the free-spectral range f.sub.R of the microresonator. The external laser cavity enables high-speed electro-optic modulation of laser modes directly inside the laser cavity. Phase locking of the lasing modes is accomplished via electro-optic modulation and electro-optic comb generation directly inside the laser cavity. Highly coherent microwaves are generated via phase-locked comb-like lasing modes.
Claims
1. An integrated photonic apparatus, comprising: an integrated external cavity laser comprising a suitable material waveguide platform incorporating a high-Q resonator and an integrated driving electrode and at least one laser-cavity end reflector disposed in/on the platform and a laser gain element coupled thereto; an optical detector operationally coupled to the integrated external cavity laser disposed to receive a laser output; and a radio frequency (RF) and/or microwave phase shifter having an input operationally coupled to the optical detector and an output operationally coupled to the integrated laser platform.
2. The integrated photonic apparatus of claim 1, wherein the high-Q resonator is one of a photonic ring and a racetrack microresonator.
3. The integrated photonic apparatus of claim 2, further comprising a narrow-band RF/microwave filter disposed optically downstream of the detector.
4. The integrated photonic apparatus of claim 2, further comprising a RF/microwave amplifier having an output operationally coupled to the integrated laser platform.
5. The integrated photonic apparatus of claim 1, wherein the suitable material platform incorporating the high-Q resonator is one of lithium niobate (LiNbO3), GaAs, AlGaAs, InP, GaP, AlN, GaN, barium titanate (BaTiO3), lithium tantalate (LiTaO3), KTP, potassium niobate (KNbO3)), or a composite medium formed by integrating one of these materials with a dielectic material such as silicon nitride or silicon dioxide.
6. The integrated photonic apparatus of claim 2, wherein the at least one laser-cavity end reflector is a Sagnac mirror.
7. The integrated photonic apparatus of claim 2, wherein the at least one laser-cavity end reflector is a Bragg grating mirror.
8. The integrated photonic apparatus of claim 2, wherein the laser gain element is a III-V Reflective Semiconductor Optical Amplifier (RSOA).
9. The integrated photonic apparatus of claim 8, wherein the RSOA is edge coupled to the laser cavity platform.
10. The integrated photonic apparatus of claim 2, further comprising an integrated phase modulator adapted to electro-optically modulate the laser cavity.
11. The integrated photonic apparatus of claim 10, further comprising a narrow-band RF/microwave filter disposed optically downstream of the detector.
12. The integrated photonic apparatus of claim 10, further comprising a RF/microwave amplifier having an output operationally coupled to the integrated laser platform.
13. The integrated photonic apparatus of claim 10, wherein the suitable material platform incorporating the high-Q resonator is one of lithium niobate (LiNbO3), GaAs, AlGaAs, InP, GaP, AlN, GaN, barium titanate (BaTiO3), lithium tantalate (LiTaO3), KTP, potassium niobate (KNbO3), or a composite medium formed by integrating one of these materials with a dielectic material such as silicon nitride or silicon dioxide.
14. The integrated photonic apparatus of claim 10, wherein the high-Q resonator is one of a photonic ring and a racetrack microresonator.
15. The integrated photonic apparatus of claim 10, wherein the at least one laser-cavity end reflector is a Sagnac mirror.
16. The integrated photonic apparatus of claim 10, wherein the at least one laser-cavity end reflector is a Bragg grating mirror.
17. The integrated photonic apparatus of claim 10, wherein the laser gain element is a Reflective Semiconductor Optical Amplifier (RSOA).
18. The integrated photonic apparatus of claim 17, wherein the RSOA is edge coupled to the laser cavity platform.
19. The integrated photonic apparatus of claim 17, further comprising an optical coupler adapted to couple light into and out of the resonator and to couple the laser output to the detector.
20. The integrated photonic apparatus of claim 1, wherein the integrated external cavity laser consists of a phase modulator having an integrated driving electrode, a gain element, and at least one cavity end reflector.
21. The integrated photonic apparatus of claim 20, wherein the laser gain element is a Reflective Semiconductor Optical Amplifier (RSOA) that is edge coupled to the laser cavity platform.
22. The integrated photonic apparatus of claim 21, wherein the at least one cavity end reflector is a Sagnac mirror.
23. The integrated photonic apparatus of claim 20, further comprising a narrow-band RF/microwave filter disposed optically downstream of the detector.
24. The integrated photonic apparatus of claim 20, further comprising a RF/microwave amplifier having an output operationally coupled to the integrated laser platform.
25. The integrated photonic apparatus of claim 20, wherein the suitable material platform incorporating the high-Q resonator is one of lithium niobate (LiNbO3), GaAs, AlGaAs, InP, GaP, AlN, GaN, barium titanate (BaTiO3), lithium tantalate (LiTaO3), KTP, potassium niobate (KNbO3)), or a composite medium formed by integrating one of these materials with a dielectic material such as silicon nitride or silicon dioxide.
26. The integrated photonic apparatus of claim 2, wherein the laser gain element is a III-V gain element that is heterogeneously integrated in/on the waveguide platform, and further comprising a second cavity end reflector.
27. The integrated photonic apparatus of claim 26, wherein the second cavity end reflector is one of a Sagnac mirror and a Bragg grating mirror.
28. The integrated photonic apparatus of claim 1, wherein in operation the laser produces a phase-locked laser comb output and the optical detector detects multiple lasing frequencies of the phase-locked laser comb output and down-converts a beating of laser modes into the radio-frequency (RF) and/or microwave frequency regime.
29. A method for generating a coherent microwave, comprising: providing an integrated external cavity laser comprising a suitable material waveguide platform incorporating a high-Q resonator characterized by a free-spectral range, f.sub.R, and an integrated driving electrode and one or more cavity reflectors integrated with a III-V gain element; generating a multi-frequency comb-like laser output with a spectrum that matches the resonance frequencies of the high-Q resonator; detecting the laser output and down-converting the beats of the lasing modes into a radio-frequency (RF) and/or microwave frequency regime having a comb-like spectrum with frequencies separated by n×f.sub.R apart where n is an integer number n=1, 2, 3 . . . ; feeding the RF/microwave signal back into the high-Q resonator to electro-optically modulate the resonator and phase lock the laser modes; and adjusting the phase of the feedback microwave so as to maximize the strength of mode locking by electro-optic modulation.
30. The method of claim 29, wherein the step of providing an integrated external cavity laser comprising a suitable material waveguide platform incorporating a high-Q resonator further comprises providing a high-Q microresonator.
31. The method of claim 29, further comprising amplifying the power of the microwave output as necessary to support regenerative microwave oscillation.
32. The method of claim 29, further comprising filtering out broadband microwave noises and higher order harmonics as necessary so as to increase the coherence and spectral purity of the microwave output.
33. The method of claim 29, further comprising providing the high-Q resonator waveguide platform as one of electro-optic materials including lithium niobate (LiNbO3), GaAs, AlGaAs, InP, GaP, AlN, GaN, barium titanate (BaTiO3), lithium tantalate (LiTaO3), KTP, potassium niobate (KNbO3), or a composite medium formed by integrating one of these electro-optic materials with a dielectric material such as silicon nitride or silicon dioxide.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0037]
[0038] A LN external cavity 102 includes a high-Q ring microresonator 108 characterized by a free spectral range f.sub.R, that can be tuned and modulated by the electro-optic Pockels effect of LN, with tuning electrodes 110 integrated with the resonator. A Sagnac loop mirror 112 is placed at an output end of the resonator to function as the output end mirror of the laser cavity. Operationally, this novel laser will generate a phase-locked laser comb output 124.
[0039] The photonic coherent microwave generator 100-A further includes electrical components 199 operationally connected to the external cavity laser. The electrical components are used to detect the laser comb output from the integrated laser and down-convert it into the RF and/or microwave regime to produce a coherent microwave, which is fed back to electro-optically modulate the laser cavity to introduce and enhance phase locking of the lasing modes that in turn enhances the coherence of the generated microwave output. An optical detector 114 disposed at the laser output down-converts the beating of the phase-locked laser-comb modes into microwaves 125 having a fundamental frequency equal to the free-spectral range f.sub.R of the LN ring microresonator 108. A RF/microwave phase shifter 118 is used to adjust the phase of the generated microwaves 125. Optionally, as shown in dotted box, a narrow-band RF/microwave filter 116 may be disposed optically downstream of the detector 114 to cut off broadband noises and pass only the fundamental frequency component at f.sub.R. Optionally, as shown in dotted box, a RF/microwave amplifier 120 may be used as necessary to support regenerative microwave oscillation and boost the power of the generated microwave output 125.
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[0044] As illustrated in
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[0046] Experimental Verification
[0047] We have carried out numerical modeling via a modified Lugiato-Lefever equation by taking into account of the gain and laser actions.
[0048] Among other benefits and advantages of the disclosed embodiments, the photonic coherent microwave generator and associated method exhibit significant novel characteristics not present in currently known photonic microwave and optical frequency comb generation approaches. These include, but are not limited to, high-speed electro-optic modulation of laser modes directly inside the laser cavity enabled by the LN external laser cavity; phase locking of the lasing modes via electro-optic modulation and electro-optic comb generation directly inside the laser cavity; spectral broadening of phase-locked comb via enhanced optical Kerr effect inside the microresonator (and/or the laser cavity); phase locking of the laser comb via combined electro-optic comb and optical Kerr comb generation; highly coherent microwave generation via phase-locked comb-like lasing modes; an electro-optic modulated III-V/LN phase-locked comb laser fully integrated on chip-scale platform, and others appreciated by those skilled in the art.
[0049] Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosed embodiments are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Moreover, all ranges disclosed herein are to be understood to encompass any and all sub-ranges subsumed therein. For example, a range of “less than 10” can include any and all sub-ranges between (and including) the minimum value of zero and the maximum value of 10, that is, any and all sub-ranges having a minimum value of equal to or greater than zero and a maximum value of equal to or less than 10, e.g., 1 to 5.
[0050] While various disclosed embodiments have been described above, it should be understood that they have been presented by way of example only and not as a limitation. Numerous changes to the disclosed embodiments can be made in accordance with the specification herein without departing from the spirit or scope of this specification. Thus the breadth and scope of this specification should not be limited by any of the above-described embodiments; rather, the scope of this specification should be defined in accordance with the appended claims and their equivalents.