Arcuate Seed Casting Method
20220325434 · 2022-10-13
Assignee
Inventors
- Ryan C. Breneman (Newington, CT, US)
- Dilip M. Shah (Glastonbury, CT, US)
- Steven J. Bullied (Pomfret, CT, US)
- Shiela R. Woodard (South Windsor, CT, US)
Cpc classification
F05D2300/175
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
B22D27/045
PERFORMING OPERATIONS; TRANSPORTING
C22C19/056
CHEMISTRY; METALLURGY
C30B11/14
CHEMISTRY; METALLURGY
F01D5/02
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C30B11/003
CHEMISTRY; METALLURGY
F05D2300/607
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
International classification
B22D27/04
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A casting method includes forming a seed. The seed has a first end and a second end. The forming includes bending a seed precursor. The seed second end is placed in contact or spaced facing relation a chill plate. The first end is contacted with molten material. The molten material is cooled and solidifies so that a crystalline structure of the seed propagates into the solidifying material. The forming further includes inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.
Claims
1. A casting method comprising: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material, wherein: the forming further comprises inserting the bent seed precursor into a sleeve leaving the bent seed precursor protruding from a first end of the sleeve.
2. The method of claim 1 wherein: the sleeve holds the bent seed precursor compressed.
3. The method of claim 1 wherein the sleeve has a second end, the bent seed precursor has a first end and a second end, the protruding being of a portion of the bent seed precursor proximate the first end of the bent seed precursor, the second end of the bent seed precursor captured by an internal shoulder of the sleeve.
4. The method of claim 1 wherein the sleeve has a second end, the bent seed precursor has a first end and a second end, the protruding being of a portion of the bent seed precursor proximate the first end of the bent seed precursor, the second end of the bent seed precursor captured by a slot of the sleeve.
5. A casting method comprising: forming a seed, the seed having a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material, wherein: the seed comprises at least one first piece and at least one second piece; the forming comprises inserting the at least one second piece into the at least one first piece, leaving the at least one second piece protruding from a first end of the at least one first piece; and the contacting the first end with molten material contacts the molten material with the protruding at least one second piece.
6. The method of claim 5 wherein: the at least one first piece is a single full annulus piece.
7. The method of claim 5 wherein: the at least one second piece has multiple layers in a radial direction.
8. The method of claim 7 wherein: the multiple layers are formed by a spiral.
9. The method of claim 7 wherein: the multiple layers are formed by radially stacking separate pieces.
10. The method of claim 5: the at least one second piece is a single piece; the at least one second piece is bent into a bent condition; and the inserting is in the bent condition.
11. The method of claim 5 wherein: the at least one second piece is a plurality of pieces; and the inserting comprises inserting each of the plurality of pieces into a slot of the at least one first piece.
12. The method of claim 5 wherein: the at least one first second piece is an SX nickel-based superalloy; and the at least one first piece is not an SX nickel-based superalloy.
13. The method of claim 12 wherein: the at least one first piece is an equiax nickel-based superalloy.
14. The method of claim 5 wherein: the at least one second piece is a Ni-based alloy; and the at least one first piece is a steel.
15. A casting method comprising: forming a seed, the seed having a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material, wherein: the forming comprises forming the seed with multiple layers in a radial direction.
16. The method of claim 15 wherein: the multiple layers are formed by a spiral.
17. The method of claim 15 wherein: the multiple layers are formed by radially stacking separate pieces.
18. The method of claim 15 wherein: the multiple layers are at least three layers at some given position.
19. The method of claim 15 wherein: the multiple layers form a seed upper portion; and the method comprises inserting the seed upper portion into a seed lower portion.
20. The method of claim 19 wherein: the multiple layers are formed by a spiral.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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[0091] Like reference numbers and designations in the various drawings indicate like elements.
DETAILED DESCRIPTION
[0092] When using a bent arcuate seed of a given alloy to cast that same alloy, recrystallization of the bent seed interferes with the successful casting of single-crystal (SX) and directionally solidified (DS) castings. The bending of the seed introduces stresses and strains across the seed thickness. Along an inner diameter (ID) depthwise region, the stresses and strains are principally compressive. Along an outer diameter (OD) depthwise region, the stresses and strains are principally tensile. The strains may include a substantial plastic component.
[0093] In casting, the bent seed has a tendency to recrystallize due to the plastic deformation. The recrystallized microstructure of the seed, in turn, propagates into the solidifying pour instead of the desired single-crystal structure.
[0094] Tables I and II below respectively identify temperature properties and nominal composition for exemplary nickel-based superalloys discussed below as seeds and/or castings. Such alloys typically have at least 45% Ni by weight (e.g., 48% to 65% or 50% to 65%). Typically, elements other than those listed in Table I will be up to 10.0 wt. % aggregate (more narrowly 5.0 wt. %) and up to 1.0% individually (more narrowly 0.5 wt. %). Minor elements in the table, may, in various implementations be present at higher levels such as for such other elements. Nevertheless, other alloys may be used.
TABLE-US-00001 TABLE I Exemplary Alloy Properties Solidus Liquidus Solution temperature Alloy (° F. (° C.)) (° F. (° C.)) (° F. (° C.)) IN 718 2319-2224* 2437 (1336) 1750 (954) (1271-1218) Alloy A 2446 (1341) 2511 (1377) 2380 (1304) Alloy B 2382 (1306) 2485 (1363) 2387 (1308) Alloy C 2271 (1244) 2543 (1395) 2286 (1252) Alloy D 2197 (1203) 2481 (1361) 2220 (1216) Alloy E 2188 (1198) 2418 (1326) 2050 (1121) Alloy F 2294 (1256) 2511 (1377) 2200 (1204) Udimet ™ 720LI 2105 (1151) 2453 (1345) 2075 (1135) Alloy G 2207 (1208) 2374 (1301) 2165 (1185) *Depending on particular commercial variety - highly dependent on boron content.
[0095] From Table I, it is seen that several of the example alloys have solution temperature higher than solidus while others have solution temperature lower than solidus.
TABLE-US-00002 TABLE II Exemplary Alloy Nominal Composition (weight percent) Alloy C Si Mn P S Al B Co Cr Cu Fe IN 718 0.05 0.13 0.07 <0.005 0.001 0.55 0.005 0.00 19.00 0.00 18.50 Alloy A 0.001 <0.12 <0.12 <0.015 <0.015 5.65 0.000 10.00 5.00 0.05 0.25 Alloy B 0.001 <0.12 <0.12 <0.015 <0.015 5.00 0.003 5.00 10.00 0.05 0.25 Alloy C 0.10 0.10 0.10 0.005 0.002 6.00 0.015 12.00 6.50 0.05 0.10 Alloy D 0.14 0.10 0.10 0.005 0.002 5.00 0.002 10.00 9.00 0.05 0.25 Alloy E 0.1 <0.12 <0.12 <0.015 <0.015 3.6 0.013 9.0 12.0 <0.1 <0.2 Alloy F 0.15 0.10 0.10 0.005 0.002 5.50 0.015 10.00 8.40 0.05 0.25 UDIMET 0.014 0.00 0.00 0.00 0.00 2.51 <0.03 14.6 16.2 0.00 <0.2 720Li Alloy G 0.04 <0.06 <0.02 <0.006 0.006 3.41 0.027 20.9 10.45 <0.010 0.25 Alloy Hf Mo Nb Ni Re Ta Ti V W Zr IN 718 0.00 3.00 5.00 52.79 0.00 0.00 0.90 0.00 0.00 0.00 Alloy A 0.10 1.90 0.00 59.75 3.00 8.40 0.00 0.00 5.90 0.00 Alloy B 0.00 0.00 0.00 62.19 0.00 12.00 1.50 0.00 4.00 0.00 Alloy C 1.50 2.00 0.00 58.50 3.00 4.00 0.00 0.00 6.00 0.03 Alloy D 2.00 0.00 1.00 58.35 0.00 0.00 2.00 0.00 12.00 0.00 Alloy E <0.1 1.9 0.00 Bal. 0.00 5.0 4.1 0.00 3.8 <0.02 Alloy F 1.40 0.70 0.00 59.07 0.00 3.10 1.10 0.00 10.00 0.06 UDIMET 0.00 2.9 0.00 Bal. 0.00 0.00 4.97 0.00 1.2 <0.06 720Li Alloy G <0.05 3.3 1.85 Bal. 0.00 4.40 3.00 <0.1 2.00 0.00
[0096] Because recrystallization is a function of strain, the recrystallization temperature will vary between specific applications as a function of the strain state (gradient). The specific recrystallization temperature can be determined by exposing sections of the seed plate to higher temperatures in increments (e.g., 25° F. (14° C.)) until recrystallization is observed metallographically. Further testing with smaller increments may refine the result. Table I identifies a solution temperature which may be used to predict recrystallization properties (discussed below).
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[0098] A melt back region 820 extends between respective lower and upper limits 822 and 824. Below the melt back region, along both the aforementioned ID depthwise region and OD depthwise region are recrystallization zones 830 and 832 leaving a relatively unaffected region 836 radially in between. The two recrystallization zones 830 and 832 thus propagate the recrystallized structure up into the body 802 causing associated portions of the body 802 to lack the desired relatively pure microstructure of the original unaffected seed 800.
[0099] Several mechanisms are theorized for mitigating or avoiding this effect. A number of them involve modifying seed geometry/construction. Others involve seed material properties (meting/solidifying and recrystallization temperatures).
[0100] A first mechanism involves removing the strained/stressed regions after bending. This may involve removal of an entire layer (circumferential extent) in a vertical region expected to reach recrystallization temperature. Because the lower end of the seed contacts (or is in close facing relation to) the chill plate, only an upper portion should reach any relevant temperature. Thus, removal may be of an entire ID layer and an entire OD layer along an upper portion while leaving those layers along the lower portion.
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[0102] As discussed above, the seed has a lower portion or section 30 and an upper portion or section 32. The seed has an inner diameter (ID) surface and an outer diameter (OD) surface. Along the lower portion, the ID surface 34 is an intact portion of a surface of an original SX strip bent to form the seed. Similarly, along the lower portion, the OD surface 36 is an intact portion of the opposite face of the original SX strip. The original strip (seed precursor) thickness was T.sub.1. Along the upper portion 32, the ID surface 34′ and OD surface 36′ have been relieved relative to the corresponding surfaces 34 and 36. Exemplary relief is shown by respective thicknesses T.sub.2 and T.sub.3 leaving a thickness T.sub.U remaining.
[0103] In exemplary embodiments where both T.sub.2 and T.sub.3 are nonzero, each are an exemplary at least 5% (more narrowly at least 10% or at least 20% or 5% to 35% or 10% to 30% or 20% to 50% (thus allowing for ID v. OD asymmetry of removal)) of the original thickness T.sub.1. In other embodiments (not shown), only one of T.sub.2 and T.sub.3 is nonzero.
[0104] In absolute terms for typical part sizes in the range of 0.1 m to 2.0 m in diameter, exemplary T.sub.1 is 2.0 mm to 20.0 mm (more particularly 2.0 mm to 10.0 mm) and exemplary T.sub.2 and T.sub.3 are at least 0.5 mm (more particularly 0.5 mm to 8.0 mm or 0.5 mm to 4.0 mm or 1.0 mm to 3.0 mm). Maximum diameter may be influenced by furnace availability with typical commercial furnaces able to go up to about 1.0 m.
[0105] Exemplary thinning is a machining such as electrical discharge machining (EDM), abrasive grinding, or high speed milling. Although the seed cavity of the
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[0107] Such a thinning to form the seed upper portion 32 may have an additional benefit of reducing stresses that the seed upper portion 32 applies to the shell 104 due to differential thermal expansion.
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[0109] Variations providing similar structure (and thus not shown separately), are to eliminate the high stress/strain regions before bending. This may involve a thinning of a portion of the metallic strip to form what will become the seed upper portion 32. This leaves a relatively thick lower portion 30 for sufficient thermal mass and thermal contact with the chill plate. However, there are different considerations when making such a seed by pre-bending material removal. For a given T.sub.1, T.sub.2, and T.sub.3, material removal pre-bending does not achieve an identical result to removing material post-bending.
[0110] Several considerations indicate that the pre-bending removal situation may leave higher magnitude stresses than the post-bending removal (if any). First, contact with bending tooling may impart stresses in contacted areas. Material from these areas is removed in the post-bending removal situation, but not the pre-bending removal. Second, even where T.sub.2 and T.sub.3 are effective to remove all stressed material (or material above given stress thresholds) in a post-bending removal, in a pre-bending removal T.sub.U is still great enough that bending creates stressed depthwise zones exceeding the thresholds. Thus, a pre-bending material removal may be associated with a smaller T.sub.U than is a post-bending material removal that produces a similar lack of recrystallized structure propagation. For this, exemplary T.sub.U in a pre-bending material removal is 20%-80% of the original thickness T.sub.1, more particularly 20% to 50%.
[0111] This consideration of pre-bending removal v. post-bending removal highlights the possibility of a full height post-bending removal by the thicknesses T.sub.2 and T.sub.3 providing benefit.
[0112] A second mechanism is to relieve stress by more selectively removing material from the strained/stressed regions. In one example (
[0113] The
[0114] Alternative embodiments with grooves both ID and OD could have them circumferentially offset or staggered (e.g.,
[0115] Exemplary partial depth grooving is a machining such as electrical discharge machining (EDM), abrasive grinding, or high speed milling.
[0116] Variations (not shown separately), are to similarly slit (
[0117] A third mechanism may alternatively involve using a thin sheet/strip and mating it to a thicker piece. The thin sheet/strip, once bent, forms the seed upper portion while the thicker piece (and lower portion of the strip) form the seed lower portion. Held in this manner the thinner piece is elastically deformed, but in an exemplary embodiment is not plastically deformed. Lacking plastic deformation, the driving force for recrystallization is removed. In one example, a seed 250 (
[0118] The upper piece 254 mounts within the lower piece 252 (e.g., so that the lower piece, via hoop stress, retains the upper piece in its circular footprint). A lower portion 278 of the upper piece 254 is received within the lower piece and an upper portion 280 protrudes above the lower piece upper end 262.
[0119] Alternative embodiments may replace the rebate/shoulder with a slot 294 (
[0120] The upper piece 254 may be relatively thin. Exemplary thickness is 0.008 inch (0.20 mm), more broadly 0.003 inch to 0.10 inch (0.076 mm to 2.5 mm) or 0.005 inch (0.13 mm) to 0.05 inch (1.3 mm).
[0121] The thin, elastically held, SX seed piece 254 may be a single SX piece/layer. Or multiple layers may be built up in one or more SX pieces radially stacked to align crystalline axes (
[0122] Alternative built-up seeds (not shown) could avoid the lower piece altogether (e.g., a spiral or stack alone held together by a weld or braze or fastener).
[0123] Combined dimensions of the lower portion 278 and lower piece 254 may correspond to those of the lower portion 30 of the seed 20. However, manufacturing considerations may provide more flexibility in going beyond either end of that range.
[0124] The upper piece 254 and lower piece 252 may be the same material or different. One example has the lower piece formed by machining such as high speed milling; whereas the upper piece is a bent SX strip. The lower piece may differ from the upper piece in chemistry or crystalline structure. For example, the lower piece may be a non-SX structure (e.g., machined from billet or equiax cast to final or near final shape) of the same material as the upper piece. It is seen that use of such different techniques allows the lower piece to be relatively thick without the same extent of machining required for a single-piece embodiment.
[0125] The lower holding ring is most ideally a non-single crystal piece of material machined into shape. Many materials could serve this role with varying advantages or disadvantages. More generally, a nickel-based non-single crystal alloy lower piece such as IN 718 could be used for SX upper pieces formed of other nickel superalloys due to its reasonable cost and near match to the SX piece(s) in thermal expansion properties. Use of the same alloy for both sections would provide essentially perfect match for thermal properties but be more expensive than using a more common equiax nickel alloy such as IN718.
[0126] Alternatively, to minimize cost, a steel lower piece could be used (e.g., stainless such as 304 stainless). This would be low cost but would have a thermal expansion mismatch with the SX nickel-based superalloy upper piece(s). Alternatively, to maximize conductivity from seed to chill plate, a copper (or other high thermal conductivity) lower piece may be used. This would have the disadvantage of thermal expansion mismatch relative to the SX piece, but would provide very high thermal conductivity from the chill plate to seed. Ultimately, choice of material for lower piece, including dimensions, will depend on details of the part being cast and equipment being used for casting.
[0127] A fourth mechanism may combine some form of segmentation of an upper member with a lower member. In one example, a seed 300 (
[0128] The lower piece 302 extends from a lower end 320 to an upper end 322 and has an inner diameter (ID) surface 324 and an outer diameter (OD) surface 326. Similarly, each upper piece 304 extends from a lower end 330 to an upper end 332 and has an inner diameter (ID) surface 334 and an outer diameter (OD) surface 336. Each upper piece has a first lateral face 338 and a second lateral face 340.
[0129] The upper pieces 304 mount to the lower piece 302. A lower portion 342 (
[0130] A fifth mechanism involves relative solidus points and/or recrystallization points. The alloy to be cast may have its solidus (temperature at which melting occurs) lower than the temperature at which seed material would recrystallize. The goal is to avoid the pour causing an undesirable amount of seed recrystallization. The pour temperature will be above the solidus of the pour alloy. If the pour solidus is too much higher (if higher at all) than the solution temperature of the seed, there will be recrystallization. Recrystallization occurs when the alloy exceeds solution temperature. For example,
[0131] The required criteria of relative solidus of casting alloy and recrystallization temperature of seed can be stated as the solidus of the cast alloy must be lower than the actual recrystallization temperature of the seed. While the recrystallization temperature can be estimated, the actual value for bent seed would be experimentally determined (e.g., testing on an actual bent seed or similar thickness of similarly bent material) and is likely to be much higher. But, for ease of estimate, one or more proxy temperature differences may be used.
[0132] One proxy involves pour solidus and seed solution temperature discussed above. Preferably the solidus should be lower than the solution temperature, more narrowly at least 45° F. (25° C.) lower. Upper limits on the range largely depend on the relative melting conditions allowing the seed to serve as a seed. A likely typical upper limit would be 80° C. However, greater deltas such as 200° C. are possible.
[0133] Alternatively or additionally, a proxy solidus delta may be used. Exemplary solidus delta between IN718 and Alloy A is at least 70° C., more particularly 70° C. to 125° C. A more generalized range comprehending other pairs may be at least 20° C. or at least 25° C. or at least 40° C., with any of those lower range ends associated with upper range ends, if any, of at most 100° C. or 150° C. or 200° C. With this in mind, it is seen that the prior mechanisms discussed above have particular use when this solidus/recrystallization or solidus/solidus relationship is not present.
[0134] A sixth mechanism, also utilizing relative solidus points and/or recrystallization points discussed above, is to use a sacrificial initial pour 910 (
[0135] The progressive withdrawal from the furnace means that the initial pour will have partially solidified by the time the higher-temperature main pour 920 begins (producing second melt back zone 924). The solidified portion is relatively unstrained, so recrystallization is not an issue.
[0136] Although a single main pour 920 is shown, there may be multiple pours after the sacrificial initial pour 910 and these multiple pours need not have any special property relationship. Similar additional pours may attend embodiments described both above and below.
[0137] A seventh mechanism involves use of a melting point suppressant (depressant) 950 (
[0138] An exemplary suppressant 950 is or contains boron (e.g., a boron-rich nickel alloy). The suppressant may be applied to a seed precursor (e.g., base seed 800 or precursor thereof) surface such as via vapor deposition, thermal spray, or slurry coating (e.g., spraying, brushing, or dipping). Thickness T.sub.C of this layer will be a function of suppressant used and method of application. It may be atomic scaled for the case of PVD application of boron (e.g., up to about 50 micrometers, more narrowly 5.0 micrometers to 50 micrometers) or macroscopic and as thick as 0.5-3.0 mm in the case of slurry coating methods (e.g., of a powder form braze material).
[0139] One group of powder form braze materials for the layer 950 is self-braze materials. For self-brazing, it comprises a mixture of alloys of at least two different compositions. At least one of the alloys is a relatively low melting point (low melt) alloy and at least one of the alloys is a relatively high melting point (high melt) alloy. These alloys may themselves be nickel-based superalloys. The low melt alloy may comprise a relatively higher content of one or more elements acting as melting point suppressants/depressants (e.g., boron) than does the high melt alloy.
[0140] U.S. Pat. No. 8,075,662 (the '662 patent) of Minor et al., issued Dec. 13, 2011, the disclosure of which patent is incorporated by reference herein in its entirety as if set forth at length, discloses exemplary self-braze material formed of a mixture of powders of differing composition. Alternatively, just the high boron component of such a material could be used for the layer 950.
[0141] However, the effect on pour solidification may also be relevant. Melting point depression of the pour may effectively cause a high melting point pour alloy to behave as a low melting point alloy and not cause seed recrystallization.
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[0144] Although examples are illustrated in the context of casting a full annulus component, other arcuate components may similarly be cast from bent arcuate seed segments. For example, partial circumference cylindrical or frustoconical segments may be cast for subsequent circumferential assembly. Thus, the associated seeds may themselves be isolated arcuate segments rather than full or near essentially full annulus (integral/continuous annulus or segmented). Exemplary segments, when used, may be bent by at least 5° and amounts all the way up to and beyond 360° (e.g., 45° to 360° but many more times beyond 360° in the case of spirals).
[0145] Further variations may reflect variations discussed in the '625 patent. Further variations may involve recombining features of the individual described embodiments in any appropriate combination including combinations of the temperature delta manipulations and physical seed configurations and processing. For example, various of the physical seed configurations and processing steps may have particularly significant benefit when the seed and pour material is relatively thermally matched (e.g same material or material with close solidus-solidus or solidus-solutioning relationships). Nevertheless, the physical seed configurations and processing steps may also be used when the seed and pour has the greater difference in thermal properties discussed for the other embodiments.
[0146] The use of “first”, “second”, and the like in the following claims is for differentiation within the claim only and does not necessarily indicate relative or absolute importance or temporal order. Similarly, the identification in a claim of one element as “first” (or the like) does not preclude such “first” element from identifying an element that is referred to as “second” (or the like) in another claim or in the description.
[0147] Where a measure is given in English units followed by a parenthetical containing SI or other units, the parenthetical's units are a conversion and should not imply a degree of precision not found in the English units.
[0148] One or more embodiments have been described. Nevertheless, it will be understood that various modifications may be made. For example, when applied to an existing baseline part configuration and/or casting process or apparatus, details of such baseline may influence details of particular implementations. Accordingly, other embodiments are within the scope of the following claims.