RF CHIRP REDUCTION IN MZ MODULATOR

Abstract

A waveguide structure for use in a balanced push-pull Mach Zehnder modulator. The waveguide structure comprises a plurality of layers. The layers comprise, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer. The lower cladding layer, waveguide core layer, and upper cladding layer are etched to form: a signal waveguide and a ground waveguide, which are connected via the lower cladding layer; and a signal line and a ground line, each located adjacent to the respective waveguide, and each connected to the respective waveguide via one or more respective resistive structures connected in the plane of the lower cladding layer.

Claims

1-9. (canceled)

10. A waveguide structure comprising: a plurality of layers, the layers comprising, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer; wherein the lower cladding layer, the waveguide core layer, and the upper cladding layer are etched to form: a signal waveguide and a ground waveguide that are connected via the lower cladding layer; and a signal line and a ground line that are: located adjacent to a respective waveguide, and connected to a respective waveguide via one or more respective resistive structures connected in a plane of the lower cladding layer.

11. The waveguide according to claim 10, wherein each of the signal waveguide, the ground waveguide, the signal line, and the ground line includes an electrode, and wherein the electrode of the signal line and the electrode of the signal waveguide are electrically connected to each other and the electrode of the ground line and the electrode of the ground waveguide are electrically connected to each other.

12. The waveguide structure according to claim 10 , wherein a resistance of each of the one or more respective resistive structures is between 10 Ohms and 10 kilo Ohms.

13. The waveguide structure according to claim 10, wherein the one or more respective resistive structures are portions of the lower cladding layer.

14. The waveguide structure according claim 13, wherein the one or more respective resistive structures each comprise an elongate portion of the lower cladding layer that is connected at one end to a corresponding waveguide and at another end to a corresponding line by respective connecting portions of the lower cladding layer.

15. The waveguide structure according to claim 10, wherein the electrode connected to the signal line and the electrode connected to the ground line are connected to a respective waveguide electrode via a plurality of conductive elements.

16. The waveguide structure according to claim 15, wherein a resistive structure is associated with each conductive element of the plurality of conductive elements.

17. A balanced push-pull Mach-Zehnder interferometer comprising: waveguide structure comprising: a plurality of layers, the layers comprising, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer; wherein the lower cladding layer, the waveguide core layer, and the upper cladding layer are etched to form: a signal waveguide and a ground waveguide that are connected via the lower cladding layer; and a signal line and a ground line that are: located adjacent to a respective waveguide, and connected to a respective waveguide via one or more respective resistive structures connected in a plane of the lower cladding layer.

18. The balanced push-pull Mach-Zehnder interferometer according to claim 17, wherein each of the signal waveguide, the ground waveguide, the signal line, and the ground line includes an electrode, and wherein the electrode of the signal line and the electrode of the signal waveguide are electrically connected to each other and the electrode of the ground line and the electrode of the ground waveguide are electrically connected to each other.

19. The balanced push-pull Mach-Zehnder interferometer structure according to claim 17, wherein a resistance of each of the one or more respective resistive structures is between 10 Ohms and 10 kilo Ohms.

20. The balanced push-pull Mach-Zehnder interferometer structure according to claim 17, wherein the one or more respective resistive structures are portions of the lower cladding layer.

21. The balanced push-pull Mach-Zehnder interferometer structure according claim 20, wherein the one or more respective resistive structures each comprise an elongate portion of the lower cladding layer that is connected at one end to a corresponding waveguide and at another end to a corresponding line by respective connecting portions of the lower cladding layer.

22. The balanced push-pull Mach-Zehnder interferometer structure according to claim 17, wherein the electrode connected to the signal line and the electrode connected to the ground line are connected to a respective waveguide electrode via a plurality of conductive elements.

23. The balanced push-pull Mach-Zehnder interferometer structure according to claim 22, wherein a resistive structure is associated with each conductive element of the plurality of conductive elements.

24. A method of manufacturing a waveguide structure, the method comprising: providing a layered structure comprising: an insulating or semi-insulating substrate; a lower cladding layer; a waveguide core layer; and a upper cladding layer; and etching the lower cladding layer, the waveguide core layer, and the upper cladding layer to form: a signal waveguide and a ground waveguide that are connected via the lower cladding layer; and a signal line and a ground line that are: located adjacent to a respective waveguide, and connected to a respective waveguide via one or more respective resistive structures in a plane of the lower cladding layer.

25. A method according to claim 24, further comprising: depositing an electrode on each of the signal waveguide, the ground waveguide, the signal line, and the ground line, wherein the electrode of the signal line and the electrode of the signal waveguide are electrically connected to each other and the electrode of the ground line and the electrode of the ground waveguide are electrically connected to each other.

26. A method according to claim 24, wherein a resistance of each of the one or more respective resistive structures is between 10 Ohms and 10 kilo Ohms.

27. A method according to claim 24, wherein the one or more respective resistive structures are portions of the lower cladding layer.

28. A method according to claim 27, wherein the one or more respective resistive structures each comprise an elongate portion of the lower cladding layer that is connected at one end to a corresponding waveguide and at another end to a corresponding line by respective connecting portions of the lower cladding layer.

29. A method according to claim 24, wherein the electrode connected to the signal line and the electrode connected to the ground line are connected to a respective waveguide electrode via a plurality of conductive elements, and a resistive structure is associated with each conductive element of the plurality of conductive elements.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0029] FIG. 1 is a schematic illustration of a Mach-Zehnder interferometer;

[0030] FIG. 2 is a cross section of the interferometer of FIG. 1;

[0031] FIG. 3 is a circuit diagram of the equivalent circuit for an the interferometer of FIG. 1;

[0032] FIG. 4 is a circuit diagram of the equivalent circuit for an exemplary interferometer;

[0033] FIG. 5A is a plan view and FIG. 5B is a cross section of an exemplary interferometer;

[0034] FIG. 6 is a graph of chirp parameter against frequency for a prior art interferometer and an exemplary interferometer.

DETAILED DESCRIPTION

[0035] At low frequencies, a series push-pull modulator will experience unacceptable levels of chirp due to the voltage imbalance between the two waveguides. The reason for this can be seen by considering the full equivalent circuit for the modulator of FIG. 1, as shown in FIG. 3. Each of the waveguides 212, 213 has an associated capacitance C.sub.W, which has a reactance 1/(2πfC.sub.W) (where f is the frequency of the AC signal). There is also a capacitance C.sub.L over each of the lines 211, 214 and a capacitance C.sub.T between each line and the respective waveguide—but since C.sub.T is much smaller than C.sub.W, these capacitances have negligible effect on the circuit. There is a resistance R.sub.DC between the central portion of the lower cladding layer which connects the waveguides 212, 213 and the DC voltage source 244, which provides a path to ground. Other alternative paths to ground may also exist within the circuit, with various different resistances.

[0036] At high frequency, the reactance of the waveguides 212, 213 is much less than the resistance to ground via the DC voltage source. As such, the leakage of the RF signal to ground via the DC voltage source is not significant, as the resistance R.sub.DC has only negligible effect on the total impedance between the central portion of the lower cladding layer and ground. However, at lower frequencies, the reactance of the waveguides will increase, and the total impedance between the central portion of the lower cladding layer and ground will be substantially lower in magnitude than the impedance between the signal electrode and the lower cladding layer, causing the voltage across the two waveguides to be different.

[0037] A modified waveguide structure is described below which causes the voltage across each waveguide to be balanced at much lower frequencies than in prior art structures.

[0038] The equivalent circuit for the waveguide structure is shown in FIG. 4. Respective resistive structures having resistance R are used to connect the central portion of the lower cladding layer of the waveguides to the respective portion of the lower cladding layer which underlies each of the lines 211, 214. This effectively bypasses the capacitance C.sub.T. The lines are considerably larger in area than the waveguides, and so the capacitance C.sub.L is much greater than the capacitance C.sub.W. This means that the resistance R and capacitance C.sub.L provide a lower impedance path at lower frequencies than is provided by the capacitance C.sub.W, and so the potential divider can remain substantially balanced at lower frequencies.

[0039] The lower the resistance R, the lower the frequency at which the circuit remains balanced. However, if the resistance R is too low, then a short circuit will form between the signal line electrode and ground line electrode via the signal line, the resistances R, and the ground line, effectively excluding the waveguides from the circuit. Therefore, the resistance R must be chosen to balance these effects. With reference to FIG. 4, the value of R reduces the impedance between the points labelled x and y which correspond to the signal line electrode and ground line electrodes. This impedance should typically be a factor of 10 lower than the resistance Rdc between the central portion of the lower cladding layer of the waveguides and the DC bias source. Depending on the value of Rdc typical values may be above 10 Ohms, above 100 Ohms, above 1 kilo Ohm, etc. but typically below 100 kilo Ohm, below 10 kilo Ohms, etc.

[0040] FIG. 5A shows a plan view of a part of an exemplary waveguide structure, and FIG. 5B is a cross section along the line B-B. The waveguide structure comprises an insulating or semi-insulating substrate 501, which may be made from a semiconductor such as InP or GaAs doped to have semi-insulating properties (e.g. a resistivity greater than 10.sup.5 Ohm cm). On top of the substrate 501 are several semiconductor layers, comprising in order a lower cladding layer 502, a waveguide core layer 503, and a upper cladding layer 504. The upper and lower cladding layers 502, 504 comprise doped semiconductor, e.g. the upper cladding layer may be a p-doped semiconductor layer and the lower cladding layer may be an n-doped semiconductor layer, or vice versa, or any other combination which can form a waveguide structure. These layers 502, 503, 504 are selectively etched to form a signal line 511, a signal waveguide 512, a ground waveguide 513, and a ground line 514. The waveguides 512, 513 are connected via a central portion of the lower cladding layer. Each of the waveguides 512, 513 and lines 511, 514 has a corresponding electrode 521, 522, 523, 524, and the electrodes 521, 524 of each line 511, 514 are connected to the respective waveguide electrode 533, 523 by conductive airbridges 525. The airbridges may be provided periodically in the length direction of the waveguides 512, 513. For simplicity only two such bridges are shown in FIG. 5A, but in other exemplary waveguide structures the number of bridges is higher than this.

[0041] The respective portion of the lower cladding layer 502 within each waveguide 512, 514 is connected to the respective portion of the lower cladding layer 502 within the respective line 511, 514 by a respective resistive structure 530. The resistive structures 530 are formed as portions of the lower cladding layer 502, comprising an elongate portion 531 which extends in the extension direction of the waveguides 512, 513. Each elongate portion 531 is connected at one end to portion of the lower cladding layer within the respective line 511, 514, and at the other end to the portion of the lower cladding layer 502 within the respective the waveguide 512, 513, by connecting portions 532. The length and width of the resistive structure 503 is chosen to provide an appropriate resistance R.

[0042] Other arrangements of resistive structures providing an appropriate resistance R may also be used. However, as in the example above, the resistive structures are in the plane of the lower cladding layer. The resistive structures may be portions of the lower cladding layer 502 (as in the example above) or separate bodies (e.g. formed during different processing steps).

[0043] The number and placement of the resistive structures 530 can be varied. For example, there may be a resistive structure at each end of the interferometer, or there may be multiple resistive structures along the length of the interferometer. As a further example, one resistive structure may be provided for each airbridge in the electrodes.

[0044] This has the advantage that the waveguide structure can then be designed as a regular repeating pattern, making manufacturing easier.

[0045] FIG. 6 shows the effect of frequency (x-axis) on chirp parameter (y axis, higher values mean greater chirp, which is undesirable) for a prior art interferometer (the chirp parameter is indicated by the line 61) and an interferometer according to the construction of FIGS. 5A and 5B (the chirp parameter is indicated by the line 62). As can be seen from the FIG. 6, the interferometer of FIGS. 5A and 5B maintains low chip at frequencies several orders of magnitude below the frequencies at which the chirp of the prior art interferometer becomes excessive.

[0046] The waveguide structure may comprise a dielectric on the sides of the signal and ground waveguides, between the upper cladding layer and electrodes of the signal and ground line, filling the region between each line and each waveguide and/or filling the region between the waveguides.

[0047] The waveguide structure may be manufactured by providing a layered structure comprising an insulating or semi insulating substrate, lower cladding layer, waveguide core layer, and upper cladding layer, etching the layers to form the structure described above, and applying the electrodes to the lines and waveguides formed by the etching.