Method for producing an ISE half-cell, ISE half-cell, sensor, and multi-parameter sensor
11460429 · 2022-10-04
Assignee
Inventors
Cpc classification
G01N27/302
PHYSICS
G01N27/31
PHYSICS
International classification
Abstract
The present disclosure discloses a method for producing an ISE half-cell, including the steps of: immersing a first end of a hollow body into a membrane solution comprising at least one solvent and an ion-specific ionophore; removing the hollow body from the membrane solution; drying the hollow body and evaporating the solvent from the membrane solution, whereby an ion-selective membrane is created at the immersed end of the hollow body; and completing the hollow body to make an ISE half-cell. The present disclosure also discloses an ISE half-cell that is produced according to such a method. The present disclosure further discloses a sensor and a multiparameter sensor comprising several such ISE half-cells.
Claims
1. A method for producing an ion selective electrode (ISE) half-cell, including the steps of: immersing a first end of a hollow body into a membrane solution comprising at least one solvent and an ion-specific ionophore; removing the hollow body from the membrane solution; drying the hollow body and evaporating the solvent from the membrane solution, whereby an ion-selective membrane is created at the first end of the hollow body, and completing the hollow body to make an ISE half-cell; immersing the first end of the hollow body with the ion-selective membrane into an additional solution in order to apply a functional layer, an anti-fouling layer, or a layer with a low wetting capability of the surface of the ion-selective membrane; and applying an overpressure at the first end or at a second end of the hollow body after immersing the first end and removing the hollow body relative to the membrane solution.
2. The method according to claim 1, wherein the steps of immersing the first end and drying are executed multiple times.
3. The method according to claim 1, wherein the membrane solution comprises a polymer solution.
4. The method according to claim 1, further including a step of: performing a microscopic surface modification on the hollow body.
5. The method according to claim 1, further including a step of: introducing a metallic support structure onto or into the ion-selective membrane.
6. The method according to claim 1, wherein completing the hollow body to make an ISE half-cell includes at least one of the steps of: filling an inner electrolyte into the hollow body; and introducing a reference electrode into the interior of the hollow body.
7. The method according to claim 1, wherein completing the hollow body to make an ISE half-cell includes a step of: attaching the hollow body to an electrode shaft that can be filled with an inner electrolyte.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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(18) In the figures, the same features are identified with the same reference symbols.
DETAILED DESCRIPTION
(19) As already mentioned, the ISE half-cell 1 comprises an ion-selective membrane 4. For example, the ISE half-cell 1 may be selective to NH.sub.4.sup.+, NO.sub.2.sup.−, NO.sub.3.sup.−, K.sup.+ ions.
(20) The membrane 4 may be formed via dipping or immersion of a hollow body 3 into a membrane solution 5 with solvent; see in this regard
(21) The membrane solution 5 may include at least one solvent and one ion-specific ionophore. With regard to a polymer solution 5, the polymer solution may be made of PVC (polyvinyl chloride) and a softener, for example. According to some embodiments, the solvent may be THF (tetrahydrofuran), for instance. The polymer solution 5 may be at room temperature, but dipping may also take place at increased or decreased temperatures. According to a specific embodiment, the hollow body 3 may be dipped into the polymer solution 5 for approximately 0.1-5 seconds or longer.
(22) In the next step (see
(23) The membrane 4 is dried in the next step, as shown in
(24) The membrane thickness may be increased by repeating the dipping and drying process. Further variations are contemplated with regard to the dip medium and/or dipping process.
(25) The viscosity may be varied by changing the composition of the membrane solution 5 thus, for instance, if more solvent is used. Shape and thickness of the formed membrane 4 may thereby be influenced.
(26) The shape and thickness may likewise be varied by applying a positive or negative overpressure to the hollow body 3. In one embodiment, the shape is in the form of a drop or hemisphere.
(27) The hollow body 3 may be activated via prior surface modification. For example, surface modification may be microscopic and used to improve the adhesion properties of the membrane 4 thereon. Some processes considered as surface modifications may include: roughening; plasma treatment; application of an adhesion promoter (surfactants, for instance); grinding; sandblasting; etching (for instance, by means of solvent, acid, or caustic solution); and/or coating.
(28) The hollow body 3 may also comprise at least one furrow 10, groove, score, rib, flute, notch, or an undercut 11 or the like. The adhesion surface may thereby be increased, or an additional positive fit may be generated. See in this regard
(29) An additional functional layer 14 may be applied via an additional dipping or immersion into an additional solution 13. This layer 14 may have something of an anti-fouling effect or a lotus effect.
(30) The process steps in
(31) A metallic, ceramic, or plastic grid, or a grid made of a renewable raw material may be applied to or in the membrane 4 in order to improve the mechanical stability of said membrane. In general, a grid 12 may be designed as a support structure. See
(32) An ISE half-cell 1 may be created by filling a suitable inner electrolyte and completion with an inner reference (for example, Ag/AgCl) together with internal electrode 8 in the interior 6; see
(33) The ion-selective electrode is completed by connecting the ISE half-cell 1 with the reference half-cell 2 via a voltage measurement device V. The reference half-cell comprises the external electrode 9, which likewise is located in the medium 7 to be measured.
(34) The method described here may be easily be automated.
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(37) The membrane 4 is visible at the left end. Arranged inside the sensor 21 is the ISE half-cell 1, with the hollow body 3 together with internal electrode 8.
(38) The sensor 21 may comprise a reference electrode 24 that corresponds to the reference electrode 9 (depicted in
(39) The sensor 21 may have an external diameter of 12 mm.
(40) The sensor 21 may comprise a plug contact 22 for example, such as one of inductive design. For this, the sensor 21 comprises corresponding electronic components which relay the signals of the ion-selective electrode 1 and the reference 24, and process them if necessary. For this, the sensor 21 may comprise a microcontroller.
(41) The sensor 21 or its housing may include a thread 23 for installation in an armature, installation support, or flange.
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(43) Only the membranes 4 of the electrode 1 are visible in
(44) The sensor 25 or its housing may include a thread 23 for installation in an armature, installation support, or flange.
(45) The sensor 25 may comprise a plug contact 22, for example, one of inductive design. For this, the sensor 25 may comprise corresponding electronic components which relay the signals of the ion-selective electrode 1 and the reference 26, and process them if necessary.