OPTOELECTRONIC COMPONENT

Abstract

The invention relates to an optoelectronic component, comprising at least one semiconductor emitter having an active region designed for emitting electromagnetic radiation of a first wavelength range. The optoelectronic component also comprises at least one wavelength conversion plate, having a decoupling surface and a lateral surface arranged laterally to same and orientated transverse to same, as well as a substrate on which the semiconductor emitter and the wavelength conversion plate are arranged. The decoupling surface is facing away from the substrate. The semiconductor emitter is designed to irradiate the wavelength conversion plate with electromagnetic radiation on the lateral surface. The wavelength conversion plate is designed to emit a mixed radiation out of the decoupling surface, said mixed radiation comprising at least one portion of the radiation of the first wavelength range and a converted radiation of a second wavelength range.

Claims

1. An optoelectronic component comprising, at least one semiconductor emitter comprising an active region configured to emit electromagnetic radiation of a first wavelength range, at least one wavelength conversion plate comprising an outcoupling surface and a side surface arranged laterally thereto and aligned transversely thereto, and a carrier on which the semiconductor emitter and the wavelength conversion plate are arranged, wherein the outcoupling surface is facing away from the carrier, the semiconductor emitter is configured to irradiate the wavelength conversion plate with electromagnetic radiation at the side surface, and the wavelength conversion plate is configured to emit a mixed radiation comprising at least a portion of radiation of the first wavelength range and a converted radiation of a second wavelength range from the outcoupling surface.

2. The optoelectronic component according to claim 1, wherein the semiconductor emitter is a laser diode.

3. The optoelectronic component according to claim 1, wherein the semiconductor emitter comprises an emission cone whose cross-section perpendicular to an axis of the emission cone comprises an elliptical shape, wherein the semiconductor emitter is arranged on the carrier such that the longer ellipse axis is aligned parallel to the main extension direction of the side surface.

4. The optoelectronic component according to claim 3, in which the side surface is oriented at a Brewster angle to the axis of the emission cone.

5. The optoelectronic component according to claim 3, wherein an optical coating is applied to the side surface.

6. The optoelectronic component according to claim 1, in which a light guide is arranged between the semiconductor emitter and the wavelength conversion plate, which guides radiation from the semiconductor emitter onto the wavelength conversion plate.

7. The optoelectronic component according to claim 1, in which at least two semiconductor emitters are provided for irradiating the side surface.

8. The optoelectronic component according to claim 7, in which the emission cones of at least two semiconductor emitters at least partially overlap.

9. The optoelectronic component according to claim 1, in which the wavelength conversion plate comprises at least one absorbing or reflecting sub region for selectively influencing the emission behavior of the wavelength conversion plate.

10. The optoelectronic component according to claim 1, wherein the wavelength conversion plate comprises conversion particles and scattering particles.

11. The optoelectronic component according to claim 10, wherein a desired intensity distribution of the mixed radiation over the outcoupling surface of the wavelength conversion plate is adjusted by means of a variation of a scattering effect in the wavelength conversion plate.

12. The optoelectronic component according to claim 10, wherein a desired intensity and/or color distribution of the mixed radiation over the outcoupling surface of the wavelength conversion plate is adjusted by means of a variation of a conversion effect in the wavelength conversion plate.

13. The optoelectronic component according to claim 1, wherein the wavelength conversion plate comprises a thickness of 3 μm inclusive to 500 μm inclusive, preferably from 70 μm inclusive to 150 μm inclusive.

14. The optoelectronic component according to claim 1, wherein the first wavelength range of the semiconductor emitter comprises a region from 380 nm inclusive to 500 nm inclusive, preferably a region from 440 nm inclusive to 460 nm inclusive.

15. The optoelectronic component according to claim 1, wherein the carrier is formed with one of the following materials: aluminum nitride, a metal and/or a silicon carbide.

16. The optoelectronic component according to claim 1, wherein a reflection-increasing coating is arranged between the carrier and the wavelength conversion plate for radiation to be emitted from the wavelength conversion plate.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0041] FIG. 1 a schematic view of an optoelectronic component described herein according to a first exemplary embodiment,

[0042] FIG. 2 a section of a schematic view of the optoelectronic component described herein according to the first exemplary embodiment,

[0043] FIG. 3 a schematic view of an optoelectronic component described herein according to a second exemplary embodiment,

[0044] FIG. 4 a schematic sectional view of an optoelectronic component described herein according to a third exemplary embodiment,

[0045] FIG. 5 a schematic sectional view of an optoelectronic component described herein according to the first exemplary embodiment,

[0046] FIG. 6 a schematic top view of a wavelength conversion plate described herein according to an exemplary embodiment,

[0047] FIG. 7 a schematic sectional view of an optoelectronic component described herein according to a fourth exemplary embodiment, and

[0048] FIG. 8 a schematic sectional view of an optoelectronic component described herein according to a fifth exemplary embodiment.

DETAILED DESCRIPTION

[0049] Elements that are identical, similar or have the same effect are marked with the same reference signs in the figures. The figures and the proportions of the elements shown in the figures with respect to one another are not to be regarded as to scale. Rather, individual elements may be shown exaggeratedly large for better representability and/or for better comprehensibility.

[0050] FIG. 1 shows a schematic view of an optoelectronic component 1 described herein according to a first exemplary embodiment. The optoelectronic component 1 shown comprises four semiconductor emitters 10 and a wavelength conversion plate 20 arranged together with the semiconductor emitters on a carrier 30.

[0051] The semiconductor emitters 10 are configured as laser diodes and are configured to emit coherent electromagnetic radiation. Furthermore, the semiconductor emitters 10 each comprise elliptical emission cones with a longer elliptical axis and a shorter elliptical axis. The longer elliptical axis is caused in particular by a large radiation angle, while the shorter elliptical axis causes a small radiation angle.

[0052] The semiconductor emitters 10 are mounted on opposite sides of the wavelength conversion plate 20 to ensure particularly uniform irradiation of the side surfaces 20B. The emission cone of the semiconductor emitters 10 corresponds to an ellipse in a cross-section transverse to the axis of the emission cone. The semiconductor emitters 10 are arranged on the carrier 30 such that the longer axis of the ellipse is aligned parallel to the main extension direction of the wavelength conversion plate 20 within a manufacturing tolerance. The semiconductor emitters 10 are mounted by means of an auxiliary carrier 301 to ensure sufficient mechanical stability of the mounted semiconductor emitters 10.

[0053] Furthermore, the auxiliary carrier enables an arrangement of the semiconductor emitters 10 rotated by 90° along the main axis of the emission cone. The longer ellipse axis of the semiconductor emitters 10 is preferably aligned parallel to the main extension plane of the wavelength conversion plate 20. Advantageously, this allows easy illumination of the side surface 20B by utilizing the Brewster angle. The auxiliary carrier 301 is formed with aluminum nitride or silicon carbide, and additionally improves a heat dissipation of the semiconductor emitters 10. The direct arrangement of the semiconductor emitters 10 on the carrier 30 advantageously enables a particularly good heat dissipation and also serves a uniform alignment of the semiconductor emitters 10 and the wavelength conversion plate 20 in a common plane.

[0054] The wavelength conversion plate 20 is formed with any of the following materials: YAG, LuAG, silicon nitride, or quantum dots, each with corresponding doping atoms. Doping atoms are, for example, Ce, Gd, Ga. The wavelength conversion plate 20 includes an outcoupling surface 20A through which electromagnetic radiation is coupled out. The outcoupling surface 20A comprises an edge length of 300 μm on its shorter side and an edge length of 1 mm on its longer side. The wavelength conversion plate 20 comprises a purposefully shaped outcoupling surface 20A to achieve a desired radiation pattern.

[0055] For example, a shadow edge desired for a low beam of an automobile is produced in this way. Transverse to the outcoupling surface 20A is a side surface 20B arranged around the wavelength conversion plate 20. The thickness of the wavelength conversion plate 20 is equal to the height of the side surface 20B and is between 70 μm and 100 μm, respectively, inclusive. Electromagnetic radiation from the semiconductor emitters 10 is coupled to the side surface 20B of the wavelength conversion plate 20.

[0056] The carrier 30 is formed with aluminum nitride and comprises a particularly high thermal conductivity. To protect the semiconductor emitter 10 and the wavelength conversion plate 20 from external environmental influences, a protective layer 50 is provided on the upper side of the carrier 30. The protective layer 50 is designed to be transparent to radiation and is formed, for example, with a glass or sapphire.

[0057] FIG. 2 shows a section of a schematic view of the optoelectronic component described herein according to the first exemplary embodiment. The section view includes a semiconductor emitter 10, an auxiliary carrier 301, and the wavelength conversion plate 20, wherein the coupling of electromagnetic radiation from the semiconductor emitter 10 into the side surface 20B of the wavelength conversion plate is clearly visible.

[0058] The side surface 20B comprises a chamfer facing the carrier 30. The chamfer is at an angle that ensures that the electromagnetic radiation from the semiconductor emitter 10 impinges on the side surface 20B of the wavelength conversion plate 20 at a Brewster angle. This ensures particularly efficient coupling of the electromagnetic radiation into the wavelength conversion plate 20.

[0059] FIG. 3 shows a schematic view of an optoelectronic component 1 described herein according to a second exemplary embodiment. The optoelectronic component 1 comprises four semiconductor emitters 10 arranged on a carrier 30 together with a wavelength conversion plate 20, four light guides 40 and four auxiliary carriers 301. For protection against external environmental influences, there is a protective layer 50 above the carrier 30 which is designed to be permeable to the emitted light.

[0060] The light guides 40 are arranged on the carrier 30 between the semiconductor emitters 10 and the wavelength conversion plate 20, respectively. The light guides 40 serve to guide an electromagnetic radiation emitted from the semiconductor emitter 10 toward the wavelength conversion plate 20. The refractive index of the light guides 40 is higher than the refractive index of the material surrounding them. For example, the semiconductor emitters 10 are thus mounted without taking into account the aperture angle of the emission cones of the electromagnetic radiation emitted from the semiconductor emitters 10.

[0061] FIG. 4 shows a schematic sectional view of an optoelectronic component 1 described herein according to a third exemplary embodiment. Two optoelectronic semiconductor emitters 10 with auxiliary carriers 301 are arranged on a carrier 30. The semiconductor emitters 10 each include an active region 100 arranged to generate electromagnetic radiation. The radiation of the first wavelength range emitted from the semiconductor emitters 10 enters the wavelength conversion plate 20 through the side surface 20B. In the wavelength conversion plate 20, at least a part of the electromagnetic radiation of the first wavelength range is converted to an electromagnetic radiation of a second wavelength range different from the first wavelength range.

[0062] The radiation of the first wavelength range and the second wavelength range mix in the wavelength conversion plate 20 to form a mixed radiation. The wavelength conversion plate 20 has an outcoupling surface 20A through which the mixed radiation is coupled out from the wavelength conversion plate 20. In particular, the mixed radiation is composed of blue light and yellow light, and thus evokes a white color impression to an observer.

[0063] FIG. 5 shows a schematic sectional view of an optoelectronic component 1 described herein according to the first exemplary embodiment. The representation shown in FIG. 5 clearly shows a chamfer of the side surfaces 20B toward the carrier 30. The chamfer of the side surfaces 20B allows electromagnetic radiation from the semiconductor emitters 10 to be coupled into the wavelength conversion plate 20 at the Brewster angle. Advantageously, the inclination of the side surface 20B towards the carrier 30 prevents possible direct coupling out of electromagnetic radiation of the first wavelength range. Radiation of the first wavelength range, which exits from the semiconductor emitters 10 and is partially reflected by the side surface 20B, is thus only reflected in the direction of the carrier 30, where it is absorbed, for example.

[0064] FIG. 6 shows a schematic top view of a wavelength conversion plate 20 described herein according to a first exemplary embodiment. The wavelength conversion plate 20 shown comprises a plurality of sub regions 201 which are designed to be absorbing or reflecting. The sub regions 201 are thus used, for example, for projecting a logo, in that these sub regions comprise a reduced or no emission of electromagnetic radiation. In particular, the sub regions 201 are arranged as coatings on the side of the wavelength conversion plate 20 facing away from the carrier 30. A reflective sub region 201 reflects electromagnetic radiation at least partially back into the wavelength conversion plate 20, allowing the radiation to be coupled out at another location.

[0065] FIG. 7 shows a schematic sectional view of an optoelectronic component 1 described herein according to a fourth exemplary embodiment. The optoelectronic component 1 comprises a carrier 30 on which a plurality of semiconductor emitters 10 are mounted with the aid of auxiliary carriers 301. The semiconductor emitters 10 each comprise an active region for generating electromagnetic radiation of a first wavelength range. A wavelength conversion plate 20 is mounted on the carrier 30, which is configured to at least partially convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. Via the side surfaces 20B of the wavelength conversion plate 20, the semiconductor emitters 10 couple the electromagnetic radiation of the first wavelength range into the wavelength conversion plate 20. Consequently, a mixed radiation of electromagnetic radiation of the first wavelength range and the second wavelength range exits from the wavelength conversion plate 20.

[0066] The carrier 30 further includes a reflection-increasing coating 60 arranged between the carrier 30 and the wavelength conversion plate 20. The reflection-increasing coating 60 is formed, for example, with a metal or a titanium dioxide and is used to reflect the mixed radiation generated in the wavelength conversion plate 20. Advantageously, the reflection-increasing coating 60 increases the efficiency of the optoelectronic component 1.

[0067] FIG. 8 shows a schematic sectional view of an optoelectronic component 1 described herein according to a fifth exemplary embodiment. The fifth exemplary embodiment is substantially identical to the third exemplary embodiment shown in FIG. 4. In addition, an optical coating 70 is arranged on the side surface 20B of the wavelength conversion plate 20. The optical coating 70 comprises an anti-reflective layer and/or a dichroic layer and advantageously increases the coupling efficiency of electromagnetic radiation into the wavelength conversion plate 20. For this purpose, the side surface 20B does not have to be oriented at a specific angle to the emission cone of the electromagnetic radiation. In particular, a dichroic layer is transmissive to the electromagnetic radiation from the semiconductor emitter 10 while being reflective to the electromagnetic radiation converted in the wavelength conversion plate 20.

[0068] The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any new feature, as well as any combination of features, which particularly includes any combination of features in the patent claims, even if that feature or combination itself is not explicitly specified in the patent claims or exemplary embodiments.