Trench insulation structure with enlarged electrically conductive side wall

Abstract

A semiconductor device may include a first active component region (20) and a second active region (22) extending flat along a first lateral direction (L.sub.1) and a second lateral direction (L.sub.2) deviating from said first lateral direction. The semiconductor device may include a trench isolation structure (10, 10′) that electrically isolates the first active component region (20) from the second active region (22) along the first lateral direction (L.sub.1) and comprises at least one electrically conductive sidewall (14, 14′, 14″); said trench isolation structure (10) having a continuously extending insulating trench isolation base wall (30) and a plurality of spaced apart trench isolation portions (32a, 32b) with electrically conductive sidewall portions (14a, 14b) therebetween. The plurality of trench isolation portions (32a, 32b) and the electrically conductive sidewall portions (14a, 14b) are spaced (a, b) from the base wall (30).

Claims

1. A semiconductor device including a first active component region (20) and a second component region (22), said first active component region (20) and said second component region (22) extending flat along a first lateral direction (L.sub.1) and a second lateral direction (L.sub.2) deviating from said first lateral direction; and comprising: a trench isolation structure (10, 10′) that electrically isolates the first active component region (20) from the second component region (22) along the first lateral direction (L.sub.1) and comprises at least one electrically conductive sidewall (14, 14′, 14″); said trench isolation structure (10) comprising: a continuously extending insulating trench isolation base wall (30); and a plurality of spaced apart trench isolation portions (32a, 32b) with electrically conductive sidewall portions (14a, 14b) therebetween; wherein the plurality of spaced apart trench isolation portions (32a, 32b) and the electrically conductive sidewall portions (14a, 14b) are spaced (a, b) from the continuously extending insulating trench isolation base wall (30).

2. The semiconductor device according to claim 1, wherein the plurality of spaced apart trench isolation portions are elongate portions (32a), a primary direction of extension (L.sub.e) of which extends along the first lateral direction (L.sub.1).

3. The semiconductor device according to claim 1, wherein the plurality of spaced apart trench isolation portions are elongate portions (32b), a primary direction of extension (L.sub.e) of which extends in the second lateral direction (L.sub.2).

4. The semiconductor device according to claim 1, wherein the plurality of spaced apart trench isolation portions are elongate portions (32a, 32b), a primary direction of extension (L.sub.e) of which extends along both the first lateral direction (L.sub.1) and a second lateral direction (L.sub.2), said second lateral direction (L.sub.2) deviating from the first lateral direction.

5. The semiconductor device according to claim 1, wherein the plurality of spaced apart trench isolation portions (32a, 32b) are enclosed by electrically conductive sidewall portions and portions of the electrically conductive sidewalls (14′, 14″, 14a, 14b) to form an extended electrically conductive sidewall.

6. The semiconductor device according to claim 4, wherein the elongate portions (32a, 32b) are formed on at least one side of the first active component region (20), and the first active component region comprises at least one semiconductor component (20a) to be isolated.

7. The semiconductor device according to claim 1, wherein the electrically conductive sidewalls and the electrically conductive sidewall portions (14, 14′, 14″, 14a, 14b) comprise a doped semiconductor material.

8. The semiconductor device according to claim 1, wherein the electrically conductive sidewalls and the electrically conductive sidewall portions comprise a metal-containing material.

9. The semiconductor device according to claim 1, wherein the trench isolation structure (10, 10′) is formed in a depth direction up to a buried insulating layer (4).

10. The semiconductor device according to claim 1, wherein one or more of the electrically conductive sidewalls and one or more of the electrically conductive sidewall portions are connected on a side of the first active component region (20) to a first buried conductive layer (6a) in the first active component region.

11. The semiconductor device according to claim 1, wherein one or more of the electrically conductive sidewalls and one or more of the electrically conductive sidewall portions are connected on a side of the second component region (22) to a second buried conductive layer (6) in the second component region.

12. The semiconductor device according to claim 11, wherein the second component region (22) is an active component region.

13. The semiconductor device according to claim 1, wherein the continuously extending insulating trench isolation base wall (30) extends, in sections, in the first lateral direction (L.sub.1) and in the second lateral direction (L.sub.2).

14. The semiconductor device according to claim 2, wherein the plurality of elongate trench isolation portions (32a, 32b) are rectangular in shape.

15. A semiconductor device including a first active component region (20) and a second active region (22), said first active component region (20) and said second active region (22) extending along a first lateral direction (L.sub.1) and a second lateral direction (L.sub.2); and comprising: a trench isolation structure (10*) that electrically isolates the first active component region (20) from the second active region (22) along the first lateral direction (L.sub.1) and comprises at least one electrically conductive sidewall (14c, 14d); said trench isolation structure (10*) comprising: a trench isolation base wall (30) that extends in the first lateral direction (L.sub.1); and a plurality of trench isolation portions (30c, 30d) with associated electrically conductive sidewall portions (14c′, 14c″, 14d′, 14d″); wherein the plurality of trench isolation portions are adjoined to the trench isolation base wall (30).

16. The semiconductor device according to claim 15, wherein the trench isolation structure (10*) that electrically isolates the first active component region (20) from the second active region (22) along the first lateral direction (L.sub.1) includes two continuously electrically conductive sidewalls (14c, 14d).

17. The semiconductor device according to claim 15, wherein the plurality of trench isolation portions are adjoined to both sides of the trench isolation base wall (30).

18. The semiconductor device according to claim 15, wherein the plurality of trench isolation portions (32c, 32d) are adjoined to one side of the trench isolation base wall (30).

19. The semiconductor device according to claim 15, wherein electrically conductive sidewall portions (14d″) of adjacent trench isolation portions (30d, 30d) are merged or combined to form a common sidewall portion (14d*).

20. The semiconductor device according to claim 15, wherein the electrically conductive sidewall portions (14c″, 14d″): protrude finger-like in the second lateral direction (L.sub.2) at the plurality of trench isolation portions; or complement each other to form a conductive simplified meander structure (14c′, 14c″, 14c′); or form a combination of both in a direction of extension of the trench isolation base wall (30).

21. The semiconductor device according to claim 15, wherein the electrically conductive sidewall portions (14c′, 14c″, 14c′) extend, at least in sections, alternatingly in the first lateral direction (L.sub.1) and the second lateral direction (L.sub.2).

22. The semiconductor device according to claim 15, wherein the plurality of trench isolation portions (30c, 30d) are formed as projections of the trench isolation base wall (30).

23-38. (canceled)

Description

[0066] The embodiments of the invention are illustrated by examples and not in a way that transfers or incorporates limitations from the Figures into the patent claims. In the Figures, same reference numerals denote similar elements.

[0067] FIG. 1 shows a top view of a conventional device 99 with conventional trench isolation structures 9.

[0068] FIG. 2 shows a schematic cross-sectional view of the device 99 with a conventional isolation trench 12 with two conductive sidewalls 14.

[0069] FIG. 3 schematically shows a top view of a new device 100 or a layout of a trench isolation structure 10 in which additional elongate trench isolation portions 32a are provided together with an elongate, continuously insulating base wall 30 to enlarge the sidewall as a whole and thus the achievable volume of the conductive edge of the trench isolation structure 10. FIG. 3a and FIG. 3b are sections along Q31 and Q32.

[0070] FIG. 4 schematically shows a top view of another new device or a layout of a trench isolation structure 10′, in which elongate trench isolation portions 32b are additionally provided, the respective primary direction of extension L.sub.e of which extends transverse to the direction of extension of the continuously insulating base wall 30. FIG. 4a and FIG. 4b are sections along Q41 and Q42.

[0071] FIG. 5 schematically shows a top view or a layout of a semiconductor device 100 with a trench isolation structure 10* in which a “simplified meander-like” shape or geometry of the continuously insulating base wall 30 is shown so that, on the whole, a larger sidewall area is obtained (per length portion).

[0072] FIG. 6 shows a top view of a further configuration 10* in which insulating trench isolation portions 30c and 30d are arranged at a trench isolation base wall 30 and are represented as insulating projections 30c and 30d of the trench isolation base wall 30. The projections extend in a direction transverse to the direction of extension of the insulating base wall 30.

[0073] Further details of the inventions will now be described with reference to the accompanying drawings.

[0074] It should be noted that, throughout the Figures, same elements are denoted by same reference numerals, and the same reference numerals as in the embodiments of the invention are also used for elements described with reference to the prior art. A redundant description of corresponding elements has been omitted. Thus, FIGS. 1 and 2 together with the associated description also form part of the disclosure of the examples of the inventions of the residual Figures.

[0075] It should be noted that the trench isolation base wall 30 typically changes its direction of extension, for example, in parallel with a second lateral direction L.sub.2 when region(s) 20 and/or 22 is/are to be enclosed, as is shown, for example, in the top view of FIG. 1.

[0076] FIG. 3 shows a schematic top view or a layout of a first semiconductor device 100 that, in illustrative embodiments, may include components as described, for example, in connection with FIGS. 1 and 2. The semiconductor device comprises e.g. a carrier wafer, e.g. the carrier wafer 2, a buried insulating layer, e.g. the buried layer 4 of FIG. 2, one or more buried doped layers, e.g. layers 6, 6a of FIG. 2, an “active” semiconductor material, e.g. the active material 8, 8b of FIG. 2, when the semiconductor device is to be provided, for example, in the form of an SOI architecture, as also described above.

[0077] Furthermore, a first active component region 20 and a second active region 22 are provided in the semiconductor device 100 in such a way that they extend, in sections, along a first lateral direction L.sub.1 and are electrically isolated by a trench isolation structure 10 along their extension in the first lateral direction L.sub.1.

[0078] In the illustrated embodiment, the first component region 20 comprises one or more semiconductor components 20a, e.g. one or more transistors, diodes or other active elements, while the second active region 22 is an active region without semiconductor components. In other cases, the second active region 22 can also comprise one or more active semiconductor elements or components.

[0079] The trench isolation structure 10 comprises a trench isolation base wall 30 provided in the form of an insulating material, e.g. in the form of silicon dioxide, silicon nitride and such like, and designed as a continuous, elongate element, the direction of extension L.sub.e of which extends in parallel with the first lateral direction L.sub.1. The base wall 30 has two functions: One the one hand, it causes an electrical isolation of the corresponding portions of the active regions 20 and 22 along the first lateral direction L.sub.1, on the other hand, it enables an electrical connection to underlying layers, e.g. to layers 6 (as 6a and 6b) of FIG. 2, by providing electrically conductive sidewalls 14, 14′.

[0080] It is to be pointed out again that the trench isolation base wall 30 changes its direction of extension, for example, in parallel with the second lateral direction L.sub.2 when region(s) 20 and/or 22 is/are to be enclosed, as is shown, for example, in the top view of FIG. 1.

[0081] The above as well as the subsequent deliberations apply to a base wall 30 extending in a single direction in each case. That is, when considering a substantially rectangular overall structure, the explanations of this disclosure apply to each “lateral edge” of the rectangle 9 delimited by the trench isolation (from corner to corner in each case).

[0082] The trench isolation base wall 30 comprises a correspondingly associated first electrically conductive sidewall 14 on the side of the second component region 22, which sidewall includes a conductive material, e.g. a doped semiconductor material, metal-containing material or such like, in the shown embodiment.

[0083] In one embodiment variant, the electrically conductive sidewall 14 on the side of the component region 22 can establish a conductive connection to a buried layer in the component region 22, said connection having the properties of a conventional conductive connection. Then, the corresponding connection to a buried conductive layer is relatively independent of a presence of a low-resistance connection since, for example, functional components are not present in the active region 22. Thus, this area of the conventional structure can definitely be suitable with respect to the insulating wall 30 and the electrically conductive sidewall 14 that is also arranged here.

[0084] On the other hand, a conductive connection, for example, to a buried layer 6a can be established, for example, on the side of the component region 20 which, in addition to the “conventional” conductive sidewall 14′, results in a higher conductivity due to an increase in conductive material. This is achieved by the provision of the trench isolation portions 32a since conductive sidewall portions 14a associated therewith are created in addition to the continuous conductive sidewall 14′ by providing said portions 32a as “insular trench isolation portions” so that, in addition to the conductive sidewall 14′ at the trench isolation base wall 30 on one side of the active region 20, the further sidewall pieces 14a, one each between two adjacent insular trench isolation portions, contribute to a considerably enlarged (thickened) overall sidewall and thus to a larger volume of the associated conductive material.

[0085] Accordingly, the resistance in the vertical direction downwards into the depth, e.g. towards the conductive buried layer 6a, is reduced.

[0086] A further continuous conductive sidewall 14″ is provided at the left edge of the image.

[0087] Here, three parallel walls are created at the side of the trench isolation base wall 30, two continuous conductive sidewalls 14′ and 14″ and therebetween a wall that is conductive in sections and composed of the trench isolation portions 32a and the electrically conductive sidewall portions 14a. The direction of extension of this mixed wall is L.sub.e.

[0088] In the illustrated embodiment, the trench isolation portions 32a are provided as elongate elements, the direction of extension (or orientation) L.sub.e of which extends in parallel with the first lateral direction L.sub.1.

[0089] Although the trench isolation portions 32a may, in principle, be connected to the base wall 30, as also described in other embodiment variants in the following, the arrangement of the insular portions 32a spaced apart from the base wall 30 is particularly advantageous since in this way the entire functional sidewall 14a, 14′ and 14″, i.e. also the conductive area facing towards and away from the insulating base wall, is available for accommodation of a conductive material.

[0090] The increase in volume of the conductive material of the electrically conductive sidewall is apparent. The electrically conductive sidewall is functionally described by 14 in all embodiments, however, in the example of FIG. 3, one electrically conductive sidewall 14 and 14′ each is present on both sides of the insulating base wall 30.

[0091] On the other hand, the electrically conductive sidewall 14′ is only a portion of the further electrically conductive sidewall portions 14a adjoining this side and of the further sidewall 14″. The sidewall portions 14a are located between the trench isolation portions 32a that are spaced from each other and from the base wall 30 at a distance a, and the further electrically conductive sidewall 14″ is adjoined thereto and faces away from the insulating base wall 30.

[0092] The individual components 14′, 14″ and 14a functionally form an electrically conductive sidewall having a large volume or, when viewed from the surface area of FIG. 3, having a large wall area (as viewed in the horizontal section).

[0093] The two sections of FIGS. 3a and 3b show the two vertical sectional planes Q.sub.31 and Q.sub.32 of FIG. 3. The difference between these illustrated sections is the presence of a trench isolation portion 32a in FIG. 3a and the absence of such a portion 32a when the conductive sidewall portion 14a is shown in section. The electrically conductive buried layer 6a (on the left) and the buried conductive layer 6 in the right active region 22 can be seen in both Figures.

[0094] The distance a created between the trench isolation base wall 30 and the trench isolation portions 32a in the lateral direction L.sub.2 in FIG. 3 is to be mentioned.

[0095] FIG. 4 shows a further embodiment variant in which a trench isolation structure 10′ comprises the trench isolation base wall 30 that, as in the embodiment of FIG. 3, is suited to enable the electrical isolation between the first active component region 20 and the second active region 22.

[0096] The trench isolation portions 32b provided here are arranged in such a way that a high degree of flexibility is achieved when the resulting overall sidewall is enlarged.

[0097] In the shown embodiment, the trench isolation portions 32b are provided as elongate, i.e. rectangular, portions. The direction of extension or orientation L.sub.e of the primary extension extends in the second lateral direction L.sub.2. In this way, the trench isolation portions 32b can be designed variable in length, while a minimum distance can be maintained along the first lateral direction L.sub.1. When a minimum distance is given between the respective adjacent portions 32b, which can typically not be any less due to technological or procedural conditions, an enlargement of the electrically conductive sidewall portions 14b can be achieved by increasing a length in the second lateral direction L.sub.2 (as the primary direction of extension) so that a desired thickening of the overall sidewall (in a top view in the illustrated section) and thus the correspondingly increased volume of the overall sidewall is obtained.

[0098] As in FIG. 3, three electrically conductive sidewalls are provided in the direction of extension of the trench isolation base wall 30: The electrically conductive sidewalls 14′ and 14 on both sides of the base wall 30 and the outer electrically conductive sidewall, which also here is a continuously extending sidewall 14″ that faces away (is remote) from the base wall 30. The conductive sidewall portions 14b extend between the electrically conductive sidewalls 14′ and 14″ and between respective adjacent but spaced apart trench isolation portions 32b which, on their part, maintain a distance b from trench isolation base wall 30.

[0099] Also here, as in FIG. 3, two vertical sections Q.sub.41 and Q.sub.42 in FIGS. 4a and 4b show the configuration of the trench isolation structure in direction L.sub.2. Functionally, the entire area to the left of the insulating base wall 30 is the electrically conductive sidewall which can also be described as being provided with a “wall base area” in the view of FIG. 4 (from the top) even though the wall area of the sidewall would rather be considered as being oriented vertically. Then, it is the bottom area or a horizontal sectional area of the overall sidewall that is considerably increased by the design of FIG. 4 just as the associated volume is correspondingly increased in the three-dimensional view.

[0100] In an embodiment that is not shown separately, the examples of FIGS. 3 and 4 are mixed so that the plurality of trench isolation portions include elongate portions 32a and 32b, the primary direction of extension L.sub.e of which extends along both the first lateral direction L.sub.1 and the second lateral direction L.sub.2, said the second lateral direction L.sub.2 differing from the first lateral direction. This may be varied in groups, or carried out in a continuously alternating manner with respect to each trench isolation portion.

[0101] Electrically conductive sidewall portions 14b are associated with the plurality of trench isolation portions 32a, 32b.

[0102] One trench isolation portion each is enclosed by two portions of the electrically conductive sidewalls 14′, 14″ and by two electrically conductive sidewall portions 14a or 14b to form the extended electrically conductive sidewall.

[0103] FIG. 5 schematically shows a top view or a layout of the semiconductor device 100 in a further advantageous embodiment in which a trench isolation structure 10″ is used. The trench isolation portions are a part of the trench isolation base wall 30, or, viewed differently, the trench isolation portions are omitted and the trench isolation base wall, in sections, changes its directions. The trench isolation base wall 30 still extends continuously, but in varying directions, in particular in sections or in an alternating manner.

[0104] One, preferably two electrically conductive sidewalls, e.g. an electrically conductive sidewall 14 that extends in a straight line and a further electrically conductive sidewall 14e that follows the alternating directions of the trench isolation base wall 30 are associated with the trench isolation base wall 30.

[0105] In the example, the alternating directions are the two lateral directions L.sub.1 and L.sub.2. On the left of FIG. 5, a U is formed of portions 30″, 30′, and 30″ of the trench isolation base wall 30 and adjacent thereto a U is formed of electrically conductive sidewall portions 14e″, 14e′, and 14e″. An inverted U can be adjoined thereto, and a plurality of said geometries may follow in lateral direction L.sub.1.

[0106] The arrangement shown in FIG. 5 may also be described such that an “originally” straight-line portion 30 is folded accordingly so that this simplified meander-shaped course composed of U elements directed opposite to each other is created.

[0107] The structure of the simplified meander or the lengths of portions 30′ and 30″ can be selected such that, due to the processing for the production of the conductive sidewall regions, corresponding areas 14g of the electrically conductive sidewalls “grow together” so that a more or less straight-line (right) edge with corresponding fingers 14g as electrically conductive sidewall portions is obtained on the side of the second component region 22, while at the same time the simplified meander shape is maintained on the side of the first component region 20.

[0108] The second electrically conductive sidewall 14 can comprise electrically conductive projections 14g protruding from the second electrically conductive sidewall and extending in the second lateral direction (L.sub.2). They each engage in the U of the simplified meander opening to the right.

[0109] In other embodiment variants not shown, portions 30′ and portions 30″ can be provided at different angles so that, for example, a zig-zag arrangement is created in which a respective first portion and a respective second portion are connected to each other at an acute angle. In still other embodiment variants, portions 30′ and 30″ can be provided together as radiused or rounded components in such a manner that an almost wavelike configuration of the trench isolation base wall 30 is created with respect to its portions 30′ and 30″. In each case, a considerably enlarged electrically conductive sidewall is obtained as compared to the conventional arrangement with the two sidewalls 14 as shown in FIG. 1.

[0110] FIG. 6 shows a further arrangement of the semiconductor device 100 with a trench isolation structure 10* in which the trench isolation base wall 30 comprises insulating projections 30c and 30d that, in the shown embodiment, are formed as elongate trench isolation portions extending towards both sides and each being connected to the trench isolation base wall 30 in an insulating manner, i.e. adjoined thereto or ending therein.

[0111] Two electrically conductive sidewalls 14c and 14d are provided which, in sections, can have alternating directions, as can be seen at the first fingers 30c, 30d from the bottom. Electrically conductive sidewall portions 14c′ 14c″, 14c′, or 14d′, 14d″, 14d′ enclose the first fingers 30c, 30d protruding away from the insulating base wall.

[0112] The distance of the respective portions 30d in the first lateral direction L.sub.1 can be defined such that, for example, electrically conductive sidewall pieces 14d* are created that are merged or combined. Thus, a corresponding longer straight portion 14d′ is created as an electrically conductive sidewall.

[0113] When greater distances are selected, electrically conductive sidewall portions are created that retrace the outer course of the respective portions (the protruding fingers) 30c, as shown, for example, on the side of the first component region 20 in a continuous manner. On the right in the active region 22, a comb shape 14d′, 14d* is shown that is composed of electrically conductive sidewall portions and trench isolation portions.

[0114] These geometries can also follow each other, as shown by trench isolation portion 30d and the electrically conductive sidewall portions 14d″, 14d′, 14d″ at the bottom on the right. The same holds true for trench isolation portion 30c and the electrically conductive sidewall portions 14c″, 14c′, 14c″ at the bottom on the left.

[0115] Obviously, two or more of the above illustrated geometric arrangements can be combined in the layout of the trench isolation structure 10, also to the left and to the right. However, the above shown variants provide a geometric shape in the layout that is easy to realize and can then be efficiently transferred into the semiconductor material when applying known processes.

[0116] The fabrication of the above shown semiconductor devices 100 is accomplished by initially creating or providing a suitable layout for the trench isolation structure 10 in which an enlarged electrically conductive sidewall comprising the trench isolation structure is generally enabled.

[0117] Corresponding lithography masks can be created on the basis of this layout in order to produce corresponding trenches by known methods. After application of a suitable lithography mask to the semiconductor material, e.g. a silicon-based wafer, said mask substantially reproducing the previously created layout, corresponding trenches are etched into the substrate material, e.g. a silicon material or other suitable semiconductor material, which trenches extend up to a desired depth, for example, up to or into or through a buried insulating layer.

[0118] The corresponding sidewalls having the increased perimeter length and thus—depending on the depth—an increased volume that is to maintain a correspondingly reduced conductivity are created by the etching. As explained above, a layer of a suitable material or materials, e.g. an insulating material, having a suitable layer thickness and a high dopant concentration is deposited to this effect in some embodiments so that the previously formed trenches are lined accordingly. Undesirable material of the layer at the bottom of the trench can be removed by anisotropic etching. The material outside of trenches can be removed in the same way.

[0119] After deposition of the doped material, a corresponding heat treatment is performed at a suitable point of the overall process using parameters that are in line with the temperature-time budget so that a corresponding depth of penetration of the dopants and a corresponding dopant concentration are obtained.

[0120] In contrast to the conventional strategy, an increased amount of conductive material is provided due to the larger overall sidewall for obtaining increased conductivity with otherwise equal process parameters for the diffusion. The same is true if conductivity is obtained by implantation of ions into the exposed trenches. That is, by using suitable implantation parameters in the form of dose and angle that are subject to certain limitations, as explained above, a corresponding doping can be realized, wherein also here an enlarged overall sidewall having an increased volume of the created conductive material again contributes to this purpose.

[0121] Due to the larger sidewall and thus the increased volume of conductive material in the respective trench isolation structure 10 (also referred to as: isolation trench structure), a high-quality, in terms of low resistance, connection to buried conductive layers or doped semiconductor layers can thus be established. Due to the new geometry of the trench isolation structure, the additional “consumption of surface area” is negligible or is at least significantly less as compared to the effort that would be required to create a corresponding low-resistance connection of buried layers by connection structures specially adapted for this purpose. Furthermore, no additional process steps are required due to the design of the trench isolation structures as opposed to conventional strategies, as described e.g. in connection with FIG. 2, so that a high degree of compatibility with existing processes is maintained while at the same time a high degree of flexibility for the adjustment of the desired conductivity is accomplished merely by adapting the layout of the trench isolation structure.