Semiconductor Optical Modulator and Method of Manufacturing the Same

Abstract

In a semiconductor light modulator having a multiple quantum well structure, a light spot size converter element provided in a light input/output section is easily and accurately manufactured. At least one layer of a compound semiconductor layer containing a P element is inserted into a desired position in the multiple quantum well structure containing an Al element. This layer is smaller than a band gap of a compound semiconductor used in a bather layer of the multiple quantum well.

Claims

1. A semiconductor light modulation element serving as a semiconductor light modulator including an InP-based compound semiconductor, wherein a waveguide core layer of the semiconductor light modulator includes, an etching stop layer containing a P element, and a multiple quantum well structure located on the etching stop layer and containing an Al element, a barrier layer is located over the etching stop layer, the barrier layer is provided in the multiple quantum well structure, and an energy band gap of the etching stop layer is smaller than a band gap of the barrier layer.

2. The semiconductor light modulation element according to claim 1, wherein the barrier layer contains InAlAs, and a well layer in the multiple quantum well structure is located over the barrier layer and contains InGaAlAs.

3. The semiconductor light modulation element according to claim 1, wherein the etching stop layer contains InP or InGaAsP.

4. The semiconductor light modulation element according to claim 1, wherein a plurality of the etching stop layers are exposed in different regions and formed in a step shape.

5. The semiconductor light modulation element according to claim 1, wherein an optical waveguide structure in a spot size converter (SSC) region where the plurality of etching stop layers are exposed in different regions and formed in a step shape takes a deep ridge structure.

6. The semiconductor light modulation element according to claim 1, wherein a light input/output section of the semiconductor light modulation element is provided with an optical spot size converter, and the optical spot size converter includes a structure in which the waveguide core layer is etched to the etching stop layer to have a thinned film thickness.

7. A manufacturing method for a semiconductor light modulation element in which a plurality of etching stop layers are exposed in different regions and formed in a step shape, the manufacturing method comprising: forming a first MQW structure containing an Al element; forming an etching stop layer containing a P element on the first MQW structure; forming a second MQW structure containing an Al element on the etching stop layer; and patterning the second MQW structure to make the etching stop layer exposed.

8. The semiconductor light modulation element according to claim 2, wherein the etching stop layer contains InP or InGaAsP.

9. The semiconductor light modulation element according to claim 2, wherein a plurality of the etching stop layers are exposed in different regions and formed in a step shape.

10. The semiconductor light modulation element according to claim 3, wherein a plurality of the etching stop layers are exposed in different regions and formed in a step shape.

11. The semiconductor light modulation element according to claim 2, wherein an optical waveguide structure in a spot size converter (SSC) region where the plurality of etching stop layers are exposed in different regions and formed in a step shape takes a deep ridge structure.

12. The semiconductor light modulation element according to claim 3, wherein an optical waveguide structure in a spot size converter (SSC) region where the plurality of etching stop layers are exposed in different regions and formed in a step shape takes a deep ridge structure.

13. The semiconductor light modulation element according to claim 4, wherein an optical waveguide structure in a spot size converter (SSC) region where the plurality of etching stop layers are exposed in different regions and formed in a step shape takes a deep ridge structure.

14. The semiconductor light modulation element according to claim 2, wherein a light input/output section of the semiconductor light modulation element is provided with an optical spot size converter, and the optical spot size converter includes a structure in which the waveguide core layer is etched to the etching stop layer to have a thinned film thickness.

15. The semiconductor light modulation element according to claim 3, wherein a light input/output section of the semiconductor light modulation element is provided with an optical spot size converter, and the optical spot size converter includes a structure in which the waveguide core layer is etched to the etching stop layer to have a thinned film thickness.

16. The semiconductor light modulation element according to claim 4, wherein a light input/output section of the semiconductor light modulation element is provided with an optical spot size converter, and the optical spot size converter includes a structure in which the waveguide core layer is etched to the etching stop layer to have a thinned film thickness.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0016] FIG. 1(a) is a diagram illustrating an image of MFD expansion by thinning a film thickness of an MQW core. FIG. 1(b) is a diagram illustrating an image of MFD expansion by thinning a film thickness of an MQW core. FIG. 1(c) is a diagram illustrating an image of moving an optical mode to a second core.

[0017] FIG. 2(a) is a top view of a semiconductor light modulation element according to a first embodiment, FIG. 2(b) is a diagram illustrating a layer structure in a region (b), FIG. 2(c) is a diagram illustrating a layer structure in a region (c), and FIG. 2(d) is a diagram illustrating a layer structure in a region (d).

[0018] FIG. 3(a) is a diagram describing patterning of an MQW structure. FIG. 3(b) is a diagram illustrating a step-shaped MQW structure in FIG. 2(d). FIG. 3(c) is a diagram illustrating a configuration of an MQW structure. FIG. 3(d) is a diagram illustrating movement of an optical mode from an upper MQW structure to a lower MQW structure.

[0019] FIG. 4 is a diagram illustrating dependence of light modulation characteristics on presence/absence of an etch stop layer.

[0020] FIG. 5(a) illustrates a top view of an SSC region of a semiconductor light modulation element according to a second embodiment, FIG. 5(b) illustrates a cross-sectional view of an SSC region in a cross section (b), FIG. 5(c) illustrates a cross-sectional view of an SSC region in a cross section (c), and FIG. 5(d) illustrates a cross-sectional view of an SSC region in a cross section (d).

DESCRIPTION OF EMBODIMENTS

[0021] Embodiments of the present invention will be described with reference to the accompanying drawings. The embodiments described below are embodiments of the present invention, and the present invention is not limited to the following embodiments.

First Embodiment

[0022] FIG. 2 illustrates a conceptual diagram of a semiconductor Mach-Zehnder light modulator (MZM) according to a first embodiment of the present invention. FIG. 2(a) is a top view of a semiconductor light modulation element according to the first embodiment, FIG. 2(b) is a diagram illustrating a layer structure in a region (b), FIG. 2(c) is a diagram illustrating a layer structure in a region (c), and FIG. 2(d) illustrates a layer structure in a region (d). As illustrated in FIG. 2(a), regions of an SSC 202a and an SSC 202b to be coupled via a waveguide 201 are provided on an InP substrate 101.

[0023] The substrate uses the semi-insulating InP substrate 101 doped with Fe, for example, as a compound semiconductor crystal of a zinc blende type. An n-type contact clad layer, a non-doped core clad layer, and a p-type clad contact layer are laminated in that order from the substrate 101 surface by epitaxial growth. The n-type contact clad layer corresponds to a lower clad layer 102, the non-doped core clad layer corresponds to a multiple quantum well (MQW) structure 204a, and the p-type clad contact layer corresponds to an upper p-type clad layer 105a. As illustrated in FIG. 2(a), an upper p-type contact layer 107 is provided on the upper p-type clad layer 105a, and an electrode 108 is provided on the upper p-type contact layer 107. As illustrated in FIG. 2(b), an upper i-type clad layer 105b is provided on the MQW structure 204a.

[0024] A multiple quantum well (MQW) structure 204b (PL wavelength: 1.4 μm) constituted of a period of InGaAlAs/InAlAs was used in the core layer in order to efficiently use a refractive index change due to the electrooptical effect with respect to a 1.5 μm band wavelength.

[0025] When an MQW containing an Al element is used, it is desirable for the etching stop layer containing a P element. For example, in the case of an MQW in which InAlAs is a barrier layer and InGaAlAs is a well layer, InP or InGaAsP that can be lattice-matched with the above layers is used for the etching stop layer. It is desirable for the stop layer to have a smaller band gap than the barrier layer.

[0026] As illustrated in FIG. 2(d), when forming the spot size converters (SSCs) 202a and 202b of a light input/output region, at least one etching stop layer capable of selective etching is inserted to facilitate processing to a desired depth by chemical wet etching. In the present embodiment, as illustrated in FIG. 3(b), a total of three layers of etching stop layers 314a to 314c were inserted into desired positions to form an MQW 204b in a step shape with four steps in order to perform optical mode expansion adiabatically in the SSC regions 202a and 202b (without deterioration in optical characteristics). The etching stop layers 314a to 314c were composed of P elements having etching selectivity with respect to the MQW formed of Al elements and being lattice-matched with the MQW. Specifically, InP was used as the etching stop layer. By switching not from InGaAlAs, but from InAlAs (barrier layer) to InP, the number of types of gases was decreased at the time of gas switching during crystal growth, and the mixed crystals of the switching interface were minimized. It is apparent that the usefulness of the invention according to the embodiment of the present invention is not lost even when the number of layers of etching stop layers is not limited to three, and around two to five layers thereof are set, for example.

[0027] A heterostructure of a p-i-n type from above is used in the present embodiment, but the invention according to the embodiment of the present invention exhibits its effects when the waveguide includes etching stop layers in the MQW structure, and therefore it is apparent that even a heterostructure in which, for example, n-i-p, n-p-i-n, and n-i-p-n are laminated in that order from above causes no problem. The clad layer was composed of InP having a lower refractive index than the core layer, for example, and InGaAs being lattice-matched with InP and having a small energy band gap was used for the p-type contact layer. The doping concentrations of the n-type clad layer and the p-type clad layer were both 1×10.sup.18 cm.sup.−3, and the doping concentration of InGaAs was 1×10.sup.19 cm.sup.3.

[0028] It is only required that the compositions of the core and the clad each have a relative refractive index difference, and therefore InGaAlAs and the like having different compositions may be used in the core clad layer, the n-type clad layer, and the p-type clad layer, for example.

[0029] The wavelength is not limited to the 1.5 μm band, and even when a 1.3 μm band is used, the usefulness of the invention according to the embodiment of the present invention will not be lost.

[0030] To form electro-separation between electrodes and an SSC structure, the p contact layer and the p clad layer in the regions other than the light modulation region are removed by dry etching and chemical etching. Subsequently, photoresist patterning is performed in the SSC regions 202a and 202b by using a first mask pattern (opening) 301a to form a first MQW 304a of a first step (the uppermost step of the four steps). Thereafter, the first MQW 304a is wet-etched down to the first etching stop layer 314a. An etchant containing hydrogen peroxide and having a high etching rate difference between Al and P elements was used as an etching liquid. Subsequently, in a similar manner, after forming a resist pattern by using a second mask pattern (opening) 301b, etching of the first etching stop layers 314a and a second MQW 304b is performed. The opening of the second mask pattern 301b is smaller than the opening of the first mask pattern 301a. A hydrochloric acid-based etchant was used for the etching stop layer. Finally, similar processing is performed with respect to a third mask pattern 301c so as to pattern a third MQW 304c. The opening of the third mask pattern 301c is smaller than the opening of the second mask pattern 301b. Consequently, only the third etching stop layer 314c and a fourth MQW 304d are left. The film thickness of the fourth MQW 304d is controlled by crystal growth, which makes it possible to control the thickness on the order of nanometers. In the present example, the thickness of the fourth MQW 304d was set to be 100 nm, for example, but it is unnecessary to limit the thickness to 100 nm because the thickness thereof differs depending on the desired mode field. It is possible to obtain the spot size converter (SSC) 202b in FIG. 2(d) by dividing the area at the vicinity of the center of FIG. 3(b).

[0031] After the processing of the MQW in the SSC region is completed, a non-doped clad layer 105 (here, InP was used) is deposited by crystal regrowth, for example. An Fe-doped clad layer may be used instead of the non-doped clad layer.

[0032] When the light modulation region and the light input/output region are configured to have different cores, a complicated manufacturing process needs to be additionally performed, and therefore it is preferable to have the MQW cores constituted of the same composition.

[0033] FIG. 3(c) is an enlarged view of 204b in FIG. 2(d). As illustrated in FIG. 3(c), the MQW structures 304a to 304c each include a partition layer 334a on an etching stop layer 314, a well layer 324b on the partition layer 334a, a partition layer 334b on the well layer 324b, a well layer 324a on the partition layer 334b, and a partition layer 334c on the well layer 324a.

[0034] FIG. 3(d) is an enlarged view of FIG. 2(d). As light travels in the light propagation direction, a mode field 106d expands toward a mode field 106e.

[0035] Subsequently, the Mach-Zehnder (MZ) interference waveguide 201 is formed by dry etching using a SiO.sub.2 mask, as illustrated in FIG. 2(a). A deep ridge waveguide structure is constituted as in FIG. 5 to be described later. Thereafter, unevenness of the waveguide is flattened by an organic film such as polyimide or benzocyclobutene (BCB), and electrode patterning is performed thereon to form the electrode 108, as illustrated in FIG. 2(b), by using an Au plating method or the like. Here, a traveling wave type distributed constant electrode is used for high speed operation. More desirably, the use of a capacitance loading type traveling wave electrode having a high degree of freedom in design of characteristic impedance, microwave speed, and the like makes it possible to obtain a higher speed.

[0036] As illustrated in FIG. 4, it has been experimentally confirmed that no deterioration in light modulation characteristics occurs due to the presence or absence of insertion of an etching layer. The absence of insertion of the etching layer corresponds to a dotted line, and the presence of insertion of the etching layer corresponds to a solid line in the drawing, where a clear difference has not been found between the presence and absence of insertion of the etching layer.

Second Embodiment

[0037] FIGS. 5(a) to 5(d) illustrate a conceptual diagram of a semiconductor Mach-Zehnder light modulator (MZM) according to a second embodiment of the present invention. Processing until the removal of the upper contact and clad layers in the regions other than the modulation region is the same as that of the first embodiment, and only SSC processing is different from that of the first embodiment. A stop layer in an MQW is only one in number, and it is inserted into a position of the thickness of the MQW where final processing is performed. The stop layer in the above MQW corresponds to the third etching stop layer 314c described in the first embodiment. The composition of an etching stop layer 614 uses, for example, InP or InGaAsP containing a P element. Here, InP was used. After the removal of the upper clad layer, a photoresist is used to form a tapered pattern, as illustrated in FIG. 5(a), and an upper MQW 604b is etched down to the etching stop layer 614 by using the tapered pattern. All the etching may be performed by wet etching, or dry etching may be performed halfway and the processing may be finally carried out down to the etching stop layer 614 by wet etching. Thereafter, a clad layer 105, which may be non-doped or Fe-doped, is deposited by crystal regrowth. In the second embodiment, InP is used for the clad layer 105. This configuration reduces only the width of the upper MQW 604b and can move an optical mode to a lower MQW 604c.

[0038] Chemical wet etching is used to simplify the processing apparatus and shorten the processing.