Magnetic sensor
11422208 · 2022-08-23
Assignee
Inventors
Cpc classification
G01R33/075
PHYSICS
G01R33/0017
PHYSICS
International classification
Abstract
A magnetic sensor includes a magneto-sensitive portion (105); an excitation wiring (110) formed in a wiring region above the magneto-sensitive portion (105) through intermediation of an insulating film (12), the excitation wiring (110) including a plurality of conductor portions (1101, 1102, 1103, 1104, and 1105) arranged in in order across at least one radial direction from a center axis of the magneto-sensitive portion (105); a current flowing through the excitation wiring (110) having a current density of which an absolute value becomes zero in a vicinity of a center of the magneto-sensitive portion (105) and continuously increases toward an outer side of the magneto-sensitive portion (105); and a magnetic field generated by the current flowing through the excitation wiring (110) in a direction vertical to the surface of the magneto-sensitive portion (105).
Claims
1. A magnetic sensor, comprising: a magneto-sensitive portion; and an excitation wiring formed in a wiring region above the magneto-sensitive portion through intermediation of an insulating film, the excitation wiring having a plurality of conductor portions arranged in order across at least one radial direction from a center axis of the magneto-sensitive portion, the center axis being normal to a surface of the magneto-sensitive portion; a current flowing through the excitation wiring having a current density of which an absolute value becomes zero in a vicinity of a center of the magneto-sensitive portion and continuously increases toward an outer side of the magneto-sensitive portion; and a magnetic field generated by the current flowing through the excitation wiring in a direction vertical to the surface of the magneto-sensitive portion, wherein an interval between centers of two of the plurality of conductor portions which are adjacent to each other along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion.
2. The magnetic sensor according to claim 1, wherein a width of each of the plurality of conductor portions along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion.
3. The magnetic sensor according to claim 1, wherein the wiring region comprises: a first wiring region; and a second wiring region located on an inner side of the first wiring region, wherein the excitation wiring comprises: a first excitation wiring formed in the first wiring region; and a second excitation wiring and a third excitation wiring formed in the second wiring region, wherein the plurality of conductor portions comprises: a plurality of first conductor portions forming the first excitation wiring, the plurality of first conductor portions arranged in order across the at least one radial direction; a plurality of second conductor portions forming the second excitation wiring, the plurality of second conductor portions arranged in order across the at least one radial direction; and a plurality of third conductor portions forming the third excitation wiring, the plurality of third conductor portions arranged alternately with the plurality of second conductor portions across the at least one radial direction, wherein an interval between centers of two of the plurality of first conductor portions which are adjacent to each other along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, wherein an interval between centers of two of the plurality of second conductor portions which are adjacent to each other along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, wherein an interval between centers of two of the plurality of third conductor portions which are adjacent to each other along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, and wherein the second excitation wiring and the third excitation wiring are electrically connected in parallel to the first excitation wiring.
4. The magnetic sensor according to claim 3, wherein a width of each of the plurality of first conductor portions along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, wherein a width of each of the plurality of second conductor portions along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, and wherein a width of each of the plurality of third conductor portions along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion.
5. The magnetic sensor according to claim 1, wherein the wiring region comprises: a first wiring region; and a second wiring region located on an inner side of the first wiring region, wherein the excitation wiring comprises: a first excitation wiring formed in the first wiring region; and a second excitation wiring formed in the second wiring region, wherein the plurality of conductor portions comprises: a plurality of first conductor portions forming the first excitation wiring, the plurality of first conductor portions arranged in order across the at least one radial direction; and a plurality of second conductor portions forming the second excitation wiring, the plurality of second conductor portions arranged in order across the at least one radial direction, wherein an interval between centers of two of the plurality of first conductor portions which are adjacent to each other along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, wherein an interval between centers of two of the plurality of second conductor portions which are adjacent to each other along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, and wherein the first excitation wiring and the second excitation wiring are electrically isolated from each other.
6. The magnetic sensor according to claim 5, wherein a width of each of the plurality of first conductor portions along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, and wherein a width of the plurality of second conductor portions across the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion.
7. The magnetic sensor according to claim 1, wherein the excitation wiring comprises: a first excitation wiring formed on the insulating film; and a second excitation wiring formed to overlap the first excitation wiring through intermediation of an interlayer insulating film, wherein the plurality of conductor portions comprises: a plurality of first conductor portions forming the first excitation wiring, the plurality of first conductor portions arranged in order across the at least one radial direction; and a plurality of second conductor portions forming the second excitation wiring, the plurality of second conductor portions arranged in order across the at least one radial direction adjacent to the plurality of first conductor portions, wherein an interval between centers of two of the plurality of first conductor portions which are adjacent to each other in the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion, and wherein, along the at least one radial direction, at least one second conductor portion of the plurality of second conductor portions positions between two first conductor portions of the plurality of first conductor portions.
8. The magnetic sensor according to claim 7, wherein a width of the plurality of first conductor portions along the at least one radial direction decreases as separating away from the center axis of the magneto-sensitive portion.
9. The magnetic sensor according to claim 1, wherein an interval between centers of two of the plurality of conductor portions which are adjacent to each other along the at least one radial direction, is constant, and wherein each of the plurality of conductor portions is electrically isolated from each other.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
(24) Before embodiments of the present invention are described, a magnetic sensor 140 in the prior art is described (see, for example, J. Trontelj et al., IEEE Proceedings of IMTC '94).
(25)
(26) The Hall element 1400 includes a magneto-sensitive portion 1405, and electrodes 1401, 1402, 1403, and 1404 formed on the surface of the magneto-sensitive portion 1405.
(27) The excitation wiring 1410 is formed above the magneto-sensitive portion 1405 through intermediation of an insulating film (not shown), and includes a plurality of (in this case, four) conductor portions 1410.sub.1, 1410.sub.2, 1410.sub.3, and 1410.sub.4 arranged in this order to cross a radial direction (for example, radial direction along the line L-L) from a center axis of the magneto-sensitive portion 1405. The center axis lies in a normal direction to the surface of the magneto-sensitive portion 1405. In this case the excitation wiring 1410 is a coil formed on the surface and a main portion is made of a single wiring material.
(28) An interval between centers of adjacent two of the conductor portions 1410.sub.1, 1410.sub.2, 1410.sub.3, and 1410.sub.4 is constant, and widths of the conductor portions 1410.sub.1, 1410.sub.2, 1410.sub.3, and 1410.sub.4 are all the same. By the current flowing through the excitation wiring 1410, a test magnetic field corresponding to the magnitude and the direction of the current is applied to the magneto-sensitive portion 1405 of the Hall element 1400 in a direction vertical to the surface of the magneto-sensitive portion 1405.
(29)
(30) A method of performing the sensitivity test in the above-mentioned magnetic sensor 140 is described. First, a current is applied to the excitation wiring 1410 so that the test magnetic field Btp is generated. The test magnetic field Btp is, as described above, non-uniform on the magneto-sensitive portion 1405 of the Hall element 1400. Driving the Hall element 1400, an output signal corresponding to the non-uniform test magnetic field Btp is processed by an output circuit (not shown) to obtain a measurement value Stp corresponding to the non-uniform test magnetic field Btp.
(31) The non-uniform test magnetic field. Btp is converted into a uniform magnetic field Btp′, and thus a correlation between the measurement value Stp and the uniform magnetic field Btp′ can be obtained. The sensitivity test can therefore be performed by comparing the measurement value Stp with respect to the uniform magnetic field Btp′ with a design value Sdp with respect to the uniform magnetic field Btp′.
(32) In the conversion of the non-uniform test magnetic field Btp into the uniform magnetic field Btp′, a table obtained by comparing results of measurement performed with respect to similar elements in each of a uniform magnetic field environment and a non-uniform test magnetic field environment is used, or the conversion is performed through numeric calculation. In any case, the accuracy of the conversion from the teat magnetic field Btp to the uniform magnetic field Btp′ reduces because of the manufacturing variations of the Hall element 1400.
(33) In contrast, in the embodiments of the present invention described in detail below, the conversion from the non-uniform magnetic field to the uniform magnetic field can be dispensable.
(34) Embodiments of the present invention are described in detail with reference to the drawings.
(35)
(36) Next, with reference to the drawings, descriptions are given of specific embodiments and modification examples of the embodiments for achieving the current density distribution of the excitation wiring as shown in
First Embodiment
(37)
(38) As illustrated in
(39) The Hall element 100 includes a magneto-sensitive portion 105 formed on a surface of a semiconductor substrate 11, and electrodes 101, 102, 103, and 104 formed at four corners of a surface of the magneto-sensitive portion 105. In the Hall element 100 of a condition in which a magnetic field is applied to the magneto-sensitive portion 105, supply of a Hall current between the electrodes 101 and 103 serving as drive current supply electrodes generates a potential difference, which is caused by the Lorentz force, between the electrodes 102 and 104 serving as Hall voltage output electrodes. When the potential difference generated between the electrodes 102 and 104 is measured, an output signal proportional to the magnetic field applied to the magneto-sensitive portion 105 can be obtained.
(40) In this case, the electrodes 101, 102, 103, and 104 are electrically connected to an input circuit (not shown) which applies current or voltage to the Hall element 100 and an output circuit (not shown) which processes the output signal of the Hall element 100. Further, the Hall element 100 is driven by, for example, a spinning current method in which the drive current supply electrodes and the Hall voltage output electrodes are alternately switched.
(41) The excitation wiring 110 is formed above the magneto-sensitive portion 105 through intermediation of an insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 110 includes a plurality of (in this case, five) conductor portions 110.sub.1, 110.sub.2, 110.sub.3, 110.sub.4, and 110.sub.5 arranged in this order across a radial direction from a center axis C of the magneto-sensitive portion 105 (for example, radial direction along the line II.sub.B-II.sub.B), and input/output terminals 110io1 and 110io2 for injecting currents. The center axis C lies in a normal direction to the surface of the magneto-sensitive portion 105. In this case the excitation wiring 110 is a coil formed on a plane and a main portion is made of a single wiring material.
(42) As a main feature of the first embodiment, in the conductor portions 110.sub.1, 110.sub.2, 110.sub.3, 110.sub.4, and 110.sub.5, intervals P1, P2, P3, and P4 each between centers of adjacent conductor portions satisfy an inequality P1>P2>P3>P4 as illustrated in
(43) With this configuration, when a predetermined current is applied to the excitation wiring 110 through the input/output terminals 110io1 and 110io2, a uniform test magnetic field Bt as shown in
(44) In the vicinity of the center axis C of the magneto-sensitive portion 105, no excitation wiring 110 is arranged, and hence the current density is substantially zero. As separating away from the center axis C of the magneto-sensitive portion 105 in the radial direction, the conductor portions 110.sub.1, 110.sub.2, 110.sub.3, 110.sub.4, and 110.sub.5 forming the excitation wiring 110 are arranged in order, but the density of the conductor portions decreases as approaching the center axis C, and hence the current density decreases. On the other hand, as separating away from the center axis C in the radial direction, that is, toward the outer side of the magneto-sensitive portion 105, the density of the conductor portions 110.sub.1, 110.sub.2, 1103, 1104, and 1105 increases, and hence the current density increases. Accordingly, by arranging the conductor portions 110.sub.1, 110.sub.2, 110.sub.3, 110.sub.4, and 110.sub.5 with appropriate center-to-center intervals P1, P2, P3, and P4, the current density distribution shown in
(45) Next, a method of performing the sensitivity test in the magnetic sensor 10 according to the first embodiment is described. First, a current is applied to the excitation wiring 110 through the input/output terminals 110io1 and 110io2 so that the test magnetic field Bt is generated. Driving the Hall element 100 in this condition, a measurement value St is obtained after the output signal corresponding to the test magnetic field Bt is processed by the output circuit. The test magnetic field Bt is uniform on the magneto-sensitive portion 105, and hence the sensitivity test can be performed by comparing the measurement value St for the test magnetic field Bt with a design value Sd for the test magnetic field Bt.
(46) At this point, in accordance with a difference between the measurement value St and the design value Sd, a part of the input circuit or the output circuit, for example, a drive current of the Hall element 100 or a gain of an amplifier in the output circuit to process the output signal of the Hall element 100 may be adjusted. With this adjustment, a high-accuracy magnetic sensor with corrected sensitivity can be obtained.
(47) As described above, according to the magnetic sensor 10 of the first embodiment, unlike the magnetic sensor 140 of the prior art illustrated in
(48) The magnetic sensor 10 according to the first embodiment is manufactured, for example, as described below.
(49) First, a single crystal silicon substrate 11 having a P-type conductivity is prepared as the semiconductor substrate 11, and, for example, phosphorus atoms are ion-implanted as impurities into the single crystal silicon substrate 11. In this manner, the N-type magneto-sensitive portion 105 is formed. After that, phosphorus atoms are selectively ion-implanted so that the electrodes 101, 102, 103, and 104 are formed on the surface of the magneto-sensitive portion 105. In this manner, the Hall element 100 is formed. Next, the insulating film 12 is formed by forming a silicon oxide film on the single crystal silicon substrate 11 by chemical vapor deposition so as to cover the Hall element 100. Then, the excitation wiring 110 is formed on the insulating film 12 by, similarly to an aluminum wiring step performed in general semiconductor manufacturing, forming an aluminum film by sputtering and subjecting the aluminum film to photolithography and etching.
Second Embodiment
(50)
(51) As illustrated in
(52) The excitation wiring 210 is formed above the magneto-sensitive portion 105 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 210 includes a plurality of (in this case, five) conductor portions 210.sub.1, 210.sub.2, 210.sub.3, 210.sub.4, and 210.sub.5 arranged in this order across a radial direction from the center axis C of the magneto-sensitive portion 105 (for example, radial direction along the line III.sub.B-III.sub.B), and input/output terminals 210io1 and 210io2 for injecting currents. The center axis C lies in a normal direction to the surface of the magneto-sensitive portion 105. In this case the excitation wiring 210 is a coil formed on a plane and a main portion is made of a single wiring material.
(53) As a main feature of the magnetic sensor 20 according to the second embodiment, as in the first embodiment, in the conductor portions 210.sub.1, 210.sub.2, 210.sub.3, 210.sub.4, and 210.sub.5, intervals P1, P2, P3, and P4 each between centers of adjacent conductor portions satisfy an inequality P1>P2>P3>P4 as illustrated in
(54) In this case, the widths W1, W2, W3, W4, and W5 of the respective conductor portions can be determined so that, for example, with respect to the intervals P1, P2, P3, and P4 for achieving a uniform magnetic field distribution, a distance S between adjacent conductor portions becomes constant. It is preferred to set the distance S between the conductor portions to, for example, a value determined based on the minimum wiring interval that can be stably obtained in the manufacturing process and based on the minimum wiring width determined in consideration of an electromigration resistance.
(55) With this configuration, when a predetermined current is applied to the excitation wiring 210 through the input/output terminals 210io1 and 210io2, as compared to the first embodiment, an even more uniform test magnetic field can be generated over the entire magneto-sensitive portion 105. The reason is described in the following.
(56) For example, in the first embodiment illustrated in
(57) In contrast, in the second embodiment, the density of the conductor portions forming the excitation wiring 210 increases as separating away from the center axis C in the radial direction, and hence, similarly to the first embodiment, the current density distribution shown in
(58) In this case, the magnetic sensor 20 according to the second embodiment can be manufactured by a method similar to that for the magnetic sensor 10 according to the first embodiment.
Third Embodiment
(59)
(60) As illustrated in
(61) The Hall element 300 includes a magneto-sensitive portion 305 formed on a surface of a semiconductor substrate 11, and electrodes 301, 302, 303, and 304 formed at four corners of the surface of the magneto-sensitive portion 305. The magneto-sensitive portion 305 of the Hall element 300 in the third embodiment has a size that is larger than that of the magneto-sensitive portion 105 of the Hall element 100 in each of the first and second embodiments. The operation and the drive method for the Hall element 300 are similar to those for the Hall element 100 in each of the first and second embodiments, and hence description thereof is omitted herein.
(62) The excitation wiring 310 is formed in a first wiring region A31 above the magneto-sensitive portion 305 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 310 includes a plurality of (in this case, three) conductor portions 310.sub.1, 310.sub.2, and 310.sub.3 arranged in this order across a radial direction from the center axis C of the magneto-sensitive portion 305 (for example, radial direction along the line IV.sub.B-IV.sub.B), and input/output terminals 310io1 and 310io2 for injecting currents. The center axis C lies in a normal direction to the surface of the magneto-sensitive portion 305. In this case the excitation wiring 310 is a coil formed on a plane and a main portion is made of a single wiring material.
(63) The excitation wiring 320 is formed in a second wiring region A32 positioned on the inner side of the first wiring region A31 above the magneto-sensitive portion 305 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 320 includes a plurality of (in this case, three) conductor portions 320.sub.1, 320.sub.2, and 320.sub.3 arranged in this order across the radial direction from the center axis C of the magneto-sensitive portion 305, and input/output terminals 320io1 and 320io2 for injecting currents. The excitation wiring 330 is formed in the wiring region A32 above the magneto-sensitive portion 305 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 330 includes a plurality of (in this case, three conductor portions 330.sub.1, 330.sub.2, and 330.sub.3 arranged in this order across the radial direction from the center axis C of the magneto-sensitive portion 305, and input/output terminals 330io1 and 330io2 for injecting currents. The conductor portions 320.sub.1, 320.sub.2, and 320.sub.3 of the excitation wiring 320 and the conductor portions 330.sub.1, 330.sub.2, and 330.sub.3 of the excitation wiring 330 are alternately arranged. The input/output terminal 320io1 of the excitation wiring 320 and the input/output terminal 330io1 of the excitation wiring 330 are electrically connected in parallel to the input/output terminal 310io2 of the excitation wiring 310. In this case each of the excitation wirings 320 and the 330 is a coil formed on a plane and a main portion is made of a single wiring material.
(64) Next, a main feature of the magnetic sensor 30 according to the third embodiment is described. As illustrated in
(65) With this configuration, even though the magneto-sensitive portion 305 has a large size, the current density distribution as shown in
(66) When the interval between the centers of the conductor portions is made smaller as separating away from the center axis C of the magneto-sensitive portion in the radial direction, in a region in which a distance D (see
(67) In view of this, according to the third embodiment, as illustrated in
(68) In this case, the magnetic sensor 30 according to the third embodiment can be manufactured by a method similar to that for the magnetic sensor 10 according to the first embodiment.
(69)
(70)
(71) It is preferred to design the relationships among the current Ic1, the current Ic2, and the current Ic3 flowing through the excitation wiring 310, the excitation wiring 320, and the excitation wiring 330, respectively, depending on the interval between the centers of the conductor portions and the width of the conductor portion in each of the excitation wiring 310, the excitation wiring 320, and the excitation wiring 330. For example, when equalities Ic1=Ic2+Ic3 and Ic2=Ic3 hold, and each of the excitation wiring 310, the excitation wiring 320, and the excitation wiring 330 is structured so that a uniform test magnetic field can be obtained, it is preferred to add a resistor R21 and a resistor R31 to the input/output terminal 320io2 and the input/output terminal 330io2, respectively, as illustrated in
(72) Further, for example, in order to satisfy a relation Ic1≠Ic2+Ic3, as illustrated in
(73) Further, in
(74) Further, in
(75) Specifically, for example, in the example illustrated in
Fourth Embodiment
(76)
(77) As illustrated in
(78) The excitation wiring 410 is formed in the first wiring region A41 above the magneto-sensitive portion 305 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 410 includes a plurality of (in this case, three) conductor portions 410.sub.1, 410.sub.2, and 410.sub.3 arranged in this order across a radial direction from the center axis C of the magneto-sensitive portion 305 (for example, radial direction along the line VI.sub.B-VI.sub.B), and input/output terminals 410io1 and 410io2 for injecting currents. The center axis C lies in a normal direction to the surface of the magneto-sensitive portion 305. In this case the excitation wiring 410 is a coil formed on the surface and a main portion is made of a single wiring material.
(79) The excitation wiring 420 is formed in a second wiring region A42 positioned on the inner side of the first wiring region A41 above the magneto-sensitive portion 305 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 420 includes a plurality of (in this case, five) conductor portions 420.sub.1, 420.sub.2, 420.sub.3, 420.sub.4, and 420.sub.5 arranged in this order across the radial direction from the center axis C of the magneto-sensitive portion 305, and input/output terminals 420io1 and 420io2 for injecting currents. In this case the excitation wiring 420 is a coil formed on the surface and a main portion is made of a single wiring material.
(80) Next, a main feature of the magnetic sensor 40 according to the fourth embodiment is described. As illustrated in
(81) With this configuration, different currents can be independently applied to the excitation wiring 410 and the excitation wiring 420. Accordingly, currents are applied to the excitation wiring 410 and the excitation wiring 420 through the input/output terminal 410io1 or 410io2 and the input/output terminal 420io1 or 420io2, respectively, so that the current flowing through the conductor portions arranged in the wiring region A41 is larger than the current flowing through the conductor portions arranged in the wiring region A42. In this manner, based on the principle similar to that in the third embodiment, even though the magneto-sensitive portion 305 has a large size, the current density distribution as shown in
(82) In this case, the magnetic sensor 40 according to the fourth embodiment can be manufactured by a method similar to that for the magnetic sensor 10 according to the first embodiment.
(83) In the fourth embodiment, although the description is given of the configuration in which the excitation wiring includes the first excitation wiring 410 and the second excitation wiring 420, the excitation wiring may further include third excitation wiring as required. In this case, it is preferred to supply a current which is different from the currents supplied to the excitation wiring 410 and the excitation wiring 420 to the third excitation wiring through an input/output terminal which is independent from the input/output terminals 410io1, 410io2, 420io1, and 420io2. Further, as in the third embodiment, each of the excitation wiring 410 and the excitation wiring 420 may be constituted from an excitation wiring including a plurality of wiring regions and a plurality of excitation sub-wirings.
Fifth Embodiment
(84)
(85) As illustrated in
(86) The excitation wiring 510 is formed above the magneto-sensitive portion 105 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 510 includes a plurality of (in this case, three) conductor portions 510.sub.1, 510.sub.2, and 510.sub.3 arranged in this order across a radial direction from the center axis C of the magneto-sensitive portion 105 (for example, radial direction DR), and input/output terminals 510io1 and 510io2 for injecting currents. The center axis C lies in a normal direction to the surface of the magneto-sensitive portion 105. In this case the excitation wiring 510 is a coil formed on the surface and a main portion is made of a single wiring material.
(87) The excitation wiring 520 is formed above the excitation wiring 510 through intermediation of an interlayer insulating film 53. The excitation wiring 520 includes a plurality of (in this case, four) conductor portions 520.sub.1, 520.sub.2, 520.sub.3, and 520.sub.4 arranged in this order across a radial direction from the center axis C of the magneto-sensitive portion 105 (for example, radial direction DR), and input/output terminals 520io1 and 520io2 for injecting currents. In this case the excitation wiring 520 is a coil formed on the surface and a main portion is made of a single wiring material.
(88) Further, as illustrated in
(89) Next, a main feature of the magnetic sensor 50 according to the fifth embodiment is described. As illustrated in
(90) With this configuration, the current density distribution shown in
(91) When the interval between the centers of the conductor portions is made smaller as separating away from the center axis C, the width of the conductor portion should also be made smaller. Presence of a conductor portion having a small width may cause reduction in reliability including lowering of resistance to electromigration. On the other hand, when the interval between the centers of the conductor portions is made larger, the approximation accuracy with respect to the current density distribution shown in
(92) Next, a specific method of manufacturing the magnetic sensor 50 according to the fifth embodiment is described. In the fifth embodiment, the Hall element 100 and the excitation wiring 510 can be manufactured by a method similar to that in the first embodiment. After the excitation wiring 510 is formed, the interlayer insulating film 53 is formed. In this case, the interlayer insulating film 53 can be formed by, for example, chemical vapor deposition of a silicon oxide film or by spin coating of spin-on-glass. Further, it is preferred to flatten the surface of the interlayer insulating film 53 by chemical mechanical polishing or etch back. The excitation wiring 520 can be formed by, for example, sputtering an aluminum film on the interlayer insulating film 53, and then subjecting the aluminum film to photolithography and etching. The excitation wiring 510 and the excitation wiring 520 can be electrically connected to each other in series through the contact plug 54 obtained by forming a via that passes through the interlayer insulating film 53 and embedding a conductor into the via by, for example, chemical vapor deposition of tungsten.
(93) In the fifth embodiment, a description is given for the example of the case in which the conductor portions of the excitation wiring 520 are arranged between all the conductor portions of the excitation wiring 510. However, it is only necessary that the current density distribution shown in
(94) Further, in the fifth embodiment, a description is given of the case in which the currents flow through the excitation wiring 510 and the excitation wiring 520 in the same direction. However, for example, the spiral excitation wiring 520 and the spiral excitation wiring 510 may have opposite winding direction, and may be connected to each other so that the direction of the current flowing through the excitation wiring 520 and the direction of the current flowing through the excitation wiring 510 are opposite to each other. In this case, it is preferred that, in the excitation wiring 520, the conductor portions be arranged so that the interval between the centers of the conductor portions increases as separating away from the center axis C in the radial direction DR, and in the excitation wiring 510, the conductor portions be arranged so that the interval between the centers of the conductor portions decreases as separating away from the center axis C in the radial direction. With this configuration, a current density Jc1 in the excitation wiring 510 decreases as approaching the center axis C, and a current density Jc2 in the excitation wiring 520 has a sign opposite to that of the current density Jc1, and increases as approaching the center axis C. As a result, a current density Jc1+Jc2 obtained by adding the current density Jc1 in the excitation wiring 510 to the current density Jc2 in the excitation wiring 520 more greatly decreases as approaching the center axis C as compared to the current density Jc1. That is, when the current density Jc1+Jc2 approximately achieves the current density distribution shown in
(95) Further, in the fifth embodiment, although a description is given for the example of the structure in which the excitation wiring 510 and the excitation wiring 520 are electrically connected in series by the contact plug 54, similarly to the fourth embodiment, the input/output terminals 510io2 and 520io1 may not be electrically connected to each other, and different currents may be independently applied to the input/output terminals 510io2 and 520io1.
(96) Further, in the fifth embodiment, although a description is given for the example of the structure in which the excitation wiring is constituted only from the first excitation wiring 510 and the second excitation wiring 520, the excitation wiring may further include the third excitation wiring as required.
(97) Further, the third excitation wiring (not shown) unrelated to the test magnetic field may be connected to the first excitation wiring 510 in parallel to the second excitation wiring 520 so that the current flowing through the first excitation wiring 510 differs from the current flowing through the second excitation wiring 520. Further, similarly to the magnetic sensor 30 of the third embodiment illustrated in
Sixth Embodiment
(98)
(99) As illustrated in
(100) The excitation wiring 610 is formed above the magneto-sensitive portion 105 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 610 includes a plurality of (in this case, six) conductor portions 610.sub.1, 610.sub.2, 610.sub.3, 610.sub.4, 610.sub.5, and 610.sub.6 arranged in this order across at least one radial direction from the center axis C of the magneto-sensitive portion 105 (for example, radial direction DR). The center axis C lies in a normal direction to the surface of the magneto-sensitive portion 105.
(101) Next, a main feature of the magnetic sensor 60 according to the sixth embodiment is described. As illustrated in
(102) With this configuration, when a center coordinate of each conductor portion i denoted by “xi”, and a current flowing through each conductor portion is denoted by “Ici” (i=1, 2, 3, 4, 5, and 6), the current Ici is supplied to the excitation wiring 610 through each input/output terminal 610.sub.iio1 or 610.sub.iio2 so that the relationship between the current Ici and the center coordinate xi matches the current density distribution shown in
(103) In this case, the magnetic sensor 60 according to the sixth embodiment can be manufactured by a method similar to that for the magnetic sensor 10 according to the first embodiment.
Seventh Embodiment
(104)
(105) As illustrated in
(106) The excitation wiring 710 is formed above the magneto-sensitive portion 105 through intermediation of the insulating film 12 formed on the semiconductor substrate 11. The excitation wiring 710 includes a plurality of (in this case, five) linear conductor portions 710.sub.1, 710.sub.2, 710.sub.3, 710.sub.4, and 710.sub.5 arranged in this order across at least one radial direction DR1 from the center axis C of the magneto-sensitive portion 105, and a plurality of (in this case, five) linear conductor portions 710.sub.6, 710.sub.7, 710.sub.8, 710.sub.9, and 710.sub.10 arranged in this order across at least one radial direction DR2 from the center axis C of the magneto-sensitive portion 105.
(107) Next, a main feature of the magnetic sensor 70 according to the seventh embodiment is described. As illustrated in
(108) Further, in the magnetic sensor 70, as illustrated in
(109) Even with this configuration, similarly to the above-mentioned embodiments, the current density distribution shown in
(110) In the seventh embodiment, though the description is given of the example in which the excitation wiring is formed of the one-layer excitation wiring 710, excitation wiring having a configuration similar to that of the excitation wiring 710 may be further formed above the excitation wiring 710 through intermediation of an interlayer insulating film in a direction vertical to the excitation wiring 710.
(111) As described above, according to the magnetic sensor of at least one embodiment of the present invention, in the sensitivity test for the magnetic sensor element which uses the test magnetic field generated by applying a current to the excitation wiring, a uniform test magnetic field can be generated over the magneto-sensitive portion of the magnetic sensor element, and a high-accuracy sensitivity test can be performed.
(112) The embodiments of the present invention have been described above, but the present invention is not limited to the above-mentioned embodiments, and it is understood that various modifications can be made thereto without departing from the gist of the present invention.
(113) For example, in the above-mentioned embodiments, a description is given for the example of the case in which the excitation wiring has a square outer shape, and each side of the outer shape of the excitation wiring is parallel to each side of the magneto-sensitive portion, but the present invention is not limited thereto. For example, as in a magnetic sensor M10 according to the first modification example illustrated in
(114) Further, the excitation wiring may not always be formed on the insulating film formed on the semiconductor substrate. For example, as in a magnetic sensor M30 according to the third modification example illustrated in
(115) Further, the number of conductor portions and the interval between the centers of the conductor portions in the excitation wiring are designed in accordance with the size and the shape of the magneto-sensitive portion. The present invention is not limited to the number and the interval described in the embodiments and the modification examples described above.
(116) Further, in the above-mentioned embodiments, though a description is given of the example in which the Hall element is used as the magnetic sensor element, the type of the magnetic sensor is not limited to the Hall element. The Hall element can be replaced by a magneto-resistive element, a magneto-impedance element, or other elements. In particular, the magneto-resistive element and the magneto-impedance element that have long wiring lengths in order to increase the magnetic field detection sensitivity are preferred to use the excitation wiring according to the present invention when a magnetic field is to be uniformly applied to the entire magneto-sensitive portion.
(117) Further, in the above-mentioned embodiments, a description is given of the example in which the excitation wiring is formed with the use of the aluminum wiring step of the semiconductor manufacturing process, but the excitation wiring may be formed with the use of a conductor film made of a material other than aluminum.