Multi-die temperature control device and method for controlling temperature of multi-die power module

Abstract

The present invention concerns a method for controlling the temperature of a multi-die power module, a multi-die temperature control device. The multi-die temperature control: obtains a signal that is representative of the temperature of one die among the dies of the multi-die power module when the die is not conducting, obtains signals that are representative of a reference temperature that is dependent of the temperature of all the dies of the multi-die power module when the dies are not conducting, compares the signal that is representative of the temperature of one die to the signal that is representative of the reference temperature, reduces the duration of the conducting time of the die or reducing the duration of the conducting time of the other dies of the multi-die power module according to the comparison result.

Claims

1. A method for controlling temperature of a multi-die power module comprising plural dies, a multi-die temperature control device receiving an input signal and driving independently the dies of the multi-die power module, wherein the method is executed by the multi-die temperature control device and comprises the steps of: obtaining, within one cycle, a signal that is representative of the temperature of one die among the dies of the multi-die power module when the die is not conducting, obtaining, within one period of time of the same cycle, signals that are representative of the equivalent resistor value of the internal gate resistors of all the dies in parallel in order to set a reference temperature that is dependent of the temperature of all the dies of the multi-die power module when the dies are not conducting, comparing the signal that is representative of the temperature of one die to the signal that is representative of the reference temperature, reducing the duration of the conducting time of the die or reducing the duration of the conducting time of the other dies of the multi-die power module according to the comparison result.

2. The method according to claim 1, wherein the signal that is representative of the temperature of one die and the signal that is representative of the reference temperature are obtained by providing a current to the gate of the die and to the gates of the dies.

3. A multi-die temperature control device that controls temperature of a multi-die power module including plural dies, the multi-die temperature control device receiving an input signal and driving independently the dies of the multi-die power module, the multi-die temperature control device comprising: means for obtaining within one cycle, a signal that is representative of the temperature of one die among the dies of the multi-die power module when the die is not conducting, means for obtaining within one period of time of the same cycle, signals that are representative of the equivalent resistor value of the internal gate resistors of all the dies in parallel in order to set a reference temperature that is dependent of the temperature of all the dies of the multi-die power module when the dies are not conducting, means for comparing the signal that is representative of the temperature of one die to the signal that is representative of the reference temperature, means for reducing the duration of the conducting time of the die or reducing the duration of the conducting time of the other dies of the multi-die power module according to the comparison result.

4. The multi-die temperature control device according to claim 3, wherein the signal that is representative of the temperature of one die and the signal that is representative of the reference temperature are obtained by providing a current to the gate of the die and to the gates of the dies.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 represents an example of a multi-die power module that is controlled by a multi-die temperature control device according to the present invention.

(2) FIG. 2 represents an example of an amplifier including temperature sensing means of a power die according to the present invention.

(3) FIG. 3 represents the current dispatching means according to the present invention.

(4) FIG. 4 represents an example of an architecture of a multi-die temperature control device according to the present invention.

(5) FIG. 5 represents an example of chronograms used for determining the temperature of one die together with a reference temperature of the multi-die power module according to the present invention.

(6) FIG. 6 represents an example of an algorithm for determining the temperature of one die and a reference temperature in order to control the individual dies of the multi-die power module using the reference temperature according to the present invention.

DESCRIPTION OF EMBODIMENTS

(7) FIG. 1 represents an example of a multi-die power module that is controlled by a multi-die temperature control device according to the present invention.

(8) The multi-die power module 15 comprises N dies noted D.sub.1 to D.sub.N. Each resistor R.sub.1 to R.sub.N is representative of an equivalent internal gate resistor of dies D.sub.1 to D.sub.N.

(9) The multi-die temperature control device 10 receives an input signal IN and drives independently the dies D.sub.1 to D.sub.N through respective amplifiers 110.sub.1 to 110.sub.N. The amplifiers 110.sub.1 to 110.sub.N further comprise die temperature sensing means.

(10) The multi-die temperature control device 10 uses a closed-loop temperature control that can be either relative or absolute temperature from the dies D.sub.1 to D.sub.N in order to increase the lifespan of the multi-die power module 15 by reducing local hot spot temperatures.

(11) According to the present invention, a reference temperature and an individual die temperature are determined in a single pulse width modulation cycle. The reference temperature and the individual die temperature are used for controlling the temperature of the dies D.sub.1 to D.sub.N of the multi-die power module 15.

(12) The resistors R.sub.1 to R.sub.N are respectively the internal gates of the dies D.sub.1 to D.sub.N.

(13) The temperatures are derived according to an internal gate resistance measurement technique, which depends on using the internal gate resistance of the dies within the power module as a temperature sensitive parameter.

(14) According to the present invention, the reference temperature is derived from an equivalent resistor value of the internal gate resistor values of the dies put in parallel and may be considered as an approximate average temperature of the dies D.sub.1 to D.sub.N.

(15) The internal gate resistance R of a die can be approximated as R=a*t+b where a and b are contants, according to a calibrated table of values relating the temperature to the resistance, b>>a and t is the temperature of the die. For example, a=0.003Ω/° C. and b=13Ω, for a modern IGBT power device.

(16) The reference temperature is determined as the mean of the voltages T.sub.j,1 to T.sub.j,N measured using a current I.sub.1 to I.sub.N passing through the internal gate resistor of the dies D.sub.1 to D.sub.N when all the dies D.sub.1 to D.sub.N are not conducting, i.e. the measurement is performed by measuring the equivalent resistor value of the internal gate resistors put in parallel.

(17) The reference temperature is determined when all the dies D.sub.1 to D.sub.N are not conducting, i.e. in a OFF state.

(18) Since practical power electronic converters feature periods of inactivity during the commutation cycle, this allows for the generation of the reference temperature point without interrupting of the converter.

(19) The individual temperature of a die D.sub.n is determined when the die D.sub.n is not conducting and all the other dies are conducting, i.e. in a ON state.

(20) The multi-die temperature controller 10 provides respectively a current I.sub.1 to I.sub.N to each amplifier 110.sub.1 to 110.sub.N that comprise the die temperature sensing means.

(21) The multi-die temperature controller 10 activates the temperature sensing means with the measurement signals M.sub.1 to M.sub.N.

(22) The multi-die temperature controller 10 provides gate signals PW.sub.1 to PW.sub.N to each die D.sub.1 to D.sub.N.

(23) The multi-die temperature controller 10 receives signals T.sub.j,1 to T.sub.j,N representative of the temperature of each die D.sub.1 to D.sub.N. The mean of the signals T.sub.j,1 to T.sub.j,N is calculated and provided to an analogue to digital converter comprised in an I/O interface of the multi-die temperature control device.

(24) According to the invention, the multi-die temperature control device controls the temperature of a multi-die power module comprising plural dies, the multi-die temperature control device receives an input signal and drives independently the dies of the multi-die power module. The multi-die temperature control device comprises: means for obtaining a signal that is representative of the temperature of one die among the dies of the multi-die power module when the die is not conducting, means for obtaining signals that are representative of a reference temperature that is dependent of the temperature of all the dies of the multi-die power module when the dies are not conducting, means for comparing the signal that is representative of the temperature of one die to the signal that is representative of the reference temperature, means for reducing the duration of the conducting time of the die or reducing the duration of the conducting time of the other dies of the multi-die power module according to the comparison result.

(25) FIG. 2 represents an example of an amplifier including temperature sensing means of a power die according to the present invention.

(26) The pulse width modulated signal PW.sub.n received by the amplifier including temperature sensing means 110.sub.n with n=1 to N is provided to the gates of transistors T1.sub.n and T2.sub.n.

(27) The drain of the transistor T1.sub.n is connected to a positive power supply Vdd, the source of the transistor T1.sub.n is connected to a first terminal of a resistor R1.sub.n. A second terminal of the resistor R1.sub.n is connected to a first terminal of the internal gate resistor R.sub.n.

(28) The source of the transistor T2.sub.n is connected to a first terminal of a resistor R2.sub.n. A second terminal of the resistor R2.sub.n is connected to a first terminal of the internal gate resistor R.sub.n.

(29) The drain of the transistor T2.sub.n is connected to the drain of a transistor T3.sub.n and to an anode of a diode Di.sub.n and the voltage at that point noted T.sub.j,n is dependent of the resistor of the internal gate resistor of the die D.sub.n that varies according to temperature. The source of the transistor T3.sub.n is connected to a negative power supply Vss.

(30) The signal M.sub.n which activates the measurement of the die D.sub.n temperature is provided to the gate of the transistor T3.sub.n.

(31) The current I.sub.n provided to the amplifier including temperature sensing means 110.sub.n is provided to the anode of the diode Di.sub.n.

(32) The cathode of the diode Di.sub.n is connected to a voltage Vclamp, which limits the voltage T.sub.j,n. The mean of the voltages T.sub.j,1 to T.sub.j,N is provided to the input of the analogue to digital converter that is comprised in the I/O interface of the multi-die temperature controller 10.

(33) FIG. 3 represents the current dispatching means according to the present invention.

(34) The current dispatching means is comprised in the I/O interface of the multi-die temperature controller 10 that will be disclosed hereinafter.

(35) The current dispatching means provide a current I.sub.1 to I.sub.N to the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N.

(36) When the temperature of a single die D.sub.n is sensed, the current I is the equal to the current I.sub.n provided to the die D.sub.n.

(37) When the reference temperature is sensed, the current I is the equal to the sum of currents I.sub.1 to I.sub.N provided to the dies D.sub.1 to D.sub.N.

(38) FIG. 4 represents an example of an architecture of a multi-die temperature control device according to the present invention.

(39) The multi-die temperature control device 10 has, for example, an architecture based on components connected together by a bus 401 and a processor 400 controlled by a program as disclosed in FIG. 6.

(40) The bus 401 links the processor 400 to a read only memory ROM 402, a random access memory RAM 403 and an input output I/O IF interface 405.

(41) The memory 403 contains registers intended to receive variables and the instructions of the program related to the algorithm as disclosed in FIG. 6.

(42) The processor 400 receives through the input output I/O IF 405 measurement of the junction temperatures T.sub.j,1 to T.sub.j,N of the dies D.sub.1 to D.sub.6, an input signal IN and outputs the pulse width modulated signals PW.sub.1 to PW.sub.N, the measurement signal M.sub.1 to M.sub.n and the current I.sub.1 to I.sub.N.

(43) The read-only memory, or possibly a Flash memory 402, contains instructions of the program related to the algorithm as disclosed in FIG. 6, which are transferred, when the multi-die temperature control device 10 is powered on, to the random access memory 403.

(44) The multi-die temperature control device 10 may be implemented in software by execution of a set of instructions or program by a programmable computing machine, such as a PC (Personal Computer), a DSP (Digital Signal Processor) or a microcontroller; or else implemented in hardware by a machine or a dedicated component, such as an FPGA (Field-Programmable Gate Array) or an ASIC (Application-Specific Integrated Circuit).

(45) In other words, the multi-die temperature control device 10 includes circuitry, or a device including circuitry, enabling the multi-die temperature control device 10 to perform the program related to the algorithm as disclosed in FIG. 6.

(46) FIG. 5 represents an example of chronograms used for determining the temperature of one die together with the reference temperature of the multi-die power module according to the present invention.

(47) FIG. 5 represents the pulse width modulated signals P.sub.W1 and P.sub.WN, and the measurement signals M.sub.1 and M.sub.N transferred by the multi-die temperature controller 10 to the amplifiers including temperature sensing means 110.sub.1 and 110.sub.N.

(48) According to the present invention, within one cycle 50, the multi-die temperature controller 10 commands one amplifier including temperature sensing means 110.sub.n by providing a measurement signal M.sub.n during a time period 51 in order to measure the internal gate resistor R.sub.n value that is dependent of the temperature of the die D.sub.n. At the same time, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.n to the amplifier including temperature sensing means 110.sub.n that puts the die D.sub.n in a non conducting state during the time period 51 whereas all the other dies are in a conducting state.

(49) Within the same cycle 50, the multi-die temperature controller 10 commands all the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N by providing a measurement signal M.sub.1 to M.sub.N during a time period 52 in order to measure the equivalent resistor value of the internal gate resistor values R.sub.1 to R.sub.N put in parallel that are dependent of the temperature of the dies D.sub.1 to D.sub.N. At least during the same time period 52, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.1 to PW.sub.N to the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N that puts the dies D.sub.1 to D.sub.N in a non conducting state at least during the time period 52.

(50) Within the cycle 50a, the multi-die temperature controller 10 commands one amplifier including temperature sensing means 110.sub.1 by providing a measurement signal M.sub.1 during the time period 51a in order to measure the internal gate resistor R.sub.1 value that is dependent of the temperature of the die D.sub.1. At the same time, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.1 to the amplifier including temperature sensing means 110.sub.1 that puts the die D.sub.1 in a non conducting state during the time period 51a whereas all the other dies D.sub.2 to D.sub.N are in a conducting state.

(51) Within the cycle 50a, the multi-die temperature controller 10 commands all the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N by providing a measurement signal M.sub.1 to M.sub.N during a time period 52a in order to measure the equivalent resistor value of the internal gate resistor values R.sub.1 to R.sub.N put in parallel that are dependent of the temperature of the dies D.sub.1 to D.sub.N. At least during the same time period 52a, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.1 to PW.sub.N to the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N that put the dies D.sub.1 to D.sub.N in a non conducting state at least during the time period 52a.

(52) Within the cycle 50b, the multi-die temperature controller 10 commands one amplifier including temperature sensing means 110.sub.N by providing a measurement signal M.sub.N during the time period 51b in order to measure the internal gate resistor R.sub.N value that is dependent of the temperature of the die D.sub.N. At the same time, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.N to the amplifier including temperature sensing means 110.sub.N that puts the die D.sub.N in a non conducting state during the time period 51b whereas all the other dies D.sub.1 to D.sub.N−1 are in a conducting state.

(53) Within the cycle 50b, the multi-die temperature controller 10 commands all the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N by providing a measurement signal M.sub.1 to M.sub.N during a time period 52b in order to measure the equivalent resistor value of the internal gate resistor values R.sub.1 to R.sub.N put in parallel that are dependent of the temperature of the dies D.sub.1 to D.sub.N. At least during the same time period 52b, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.1 to PW.sub.N to the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N that put the dies D.sub.1 to D.sub.N in a non conducting state at least during the time period 52b.

(54) Within the cycle 50c, the multi-die temperature controller 10 commands one amplifier including temperature sensing means 110.sub.n by providing a measurement signal M.sub.n during the time period 51c in order to measure the internal gate resistor R.sub.n value that is dependent of the temperature of the die D.sub.n. At the same time, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.n to the amplifier including temperature sensing means 110.sub.n that puts the die D.sub.n in a non conducting state whereas all the other dies are in a conducting state.

(55) Within the cycle 50c, the multi-die temperature controller 10 commands all the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N by providing a measurement signal M.sub.1 to M.sub.N during a time period 52c in order to measure the equivalent resistor value of the internal gate resistor values R.sub.1 to R.sub.N put in parallel that are dependent of the temperature of the dies D.sub.1 to D.sub.N. At least during the same time period 52c, the multi-die temperature controller 10 provides a pulse width modulated signal PW.sub.1 to PW.sub.N to the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N that put the dies D.sub.1 to D.sub.N in a non conducting state at least during the time period 52c.

(56) FIG. 6 represents an example of an algorithm for determining the temperature of one die and a reference temperature in order to control the individual dies of the multi-die power module using the reference temperature according to the present invention.

(57) The present algorithm will be disclosed in an example wherein it is executed by the processor 400 of the multi-die temperature controller 10.

(58) At step S60, the processor 400 commands the generation of a measurement signal command the I/O interface 405 in order to perform a measurement of the internal gate resistor value that is dependent of the temperature of the die D.sub.n.

(59) The processor 400 commands the I/O interface 405 in order to transfer a pulse width modulated signal PW.sub.n that is at low level at least during the time period 51 and commands the I/O interface 405 in order to transfer a measurement signal PW.sub.n that enables the current I.sub.n to flow through the internal gate resistor of the die D.sub.n whereas all the other dies are in a conducting state.

(60) The processor 400 commands an analogue to digital converter comprised in the I/O interface 405 in order to sample the voltage value T.sub.j,n after a time period which is for example equal to the half of the duration of the time period 51.

(61) At next step S61, the processor 400 memorizes the sampled voltage into the memory 403.

(62) At next step S62, the processor 400 commands the generation of a measurement signals command the I/O interface 405 in order to perform a measurement of the reference temperature that is representative of the equivalent resistor value of the internal gate resistor values put in parallel that is dependent of the temperatures of the dies D.sub.n to D.sub.n.

(63) The multi-die temperature controller 10 commands all the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N by providing a measurement signal M.sub.1 to M.sub.N during a time period 52 in order to measure the equivalent resistor value of the internal gate resistor values R.sub.1 to R.sub.N put in parallel that is dependent of the temperature of the dies D.sub.1 to D.sub.N. At least during the same time period 52, the multi-die temperature controller 10 commands the I/O interface in order to provide a pulse width modulated signal PW.sub.1 to PW.sub.N to the amplifiers including temperature sensing means 110.sub.1 to 110.sub.N that puts the dies D.sub.1 to D.sub.N in a non conducting state at least during the time period 52.

(64) The processor 400 commands the analogue to digital converter comprised in the I/O interface 405 in order to sample the average value of the voltage values T.sub.j,1 to T.sub.j,N after a time period which is for example equal to the half of the duration of the time period 52.

(65) At next step S63, the processor 400 memorizes the sampled average voltage value into the memory 403.

(66) At next step S64, the processor 400 updates the pulse width modulated signal PW.sub.n signal to be provided to the die D.sub.n by comparing the values stored at steps S61 and S63.

(67) For example, if the value T.sub.j,n is higher than the reference value, the processor 400 reduces the duration of the conducting time of the die D.sub.n during at least one pulse width modulated cycle.

(68) For example, if the value T.sub.j,n is lower than the reference value, the processor 400 decreases the duration of the conducting time of the dies D.sub.1 to D.sub.n−1 and D.sub.n+1 to D.sub.N during at least 1 pulse width modulated cycle.

(69) At next step S65, the processor 400 selects another die that is different from the die D.sub.n and returns to step S60.

(70) Naturally, many modifications can be made to the embodiments of the invention described above without departing from the scope of the present invention.