SINGLE-MODE HYBRID III-V ON SILICON LASER OF SIMPLIFIED CONSTRUCTION

Abstract

A laser device includes a III-V heterostructure amplifying medium; a silicon optical waveguide having a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section includes a refractive index disruption region provided with micro-reflectors designed to reduce the thickness and/or the width of the coupling section. The first reflective structure is formed in a section of the waveguide with a first thickness. The second reflective structure is formed in a section of the waveguide, which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness that is greater than the first thickness.

Claims

1. A laser device comprising: a III-V heterostructure amplifying medium; a silicon optical waveguide which includes a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section arranged between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium, wherein the coupling section comprises a refractive index disturbance region provided with micro-reflectors configured by reducing one of a thickness and a width of the coupling section, the micro-reflectors having a length of $m*\frac{{\lambda }_{m0}}{4.n_{\mathrm{eff}}}$ and being separated from one another by a distance greater than $n*\frac{{\lambda }_{m0}}{4.n_{\mathrm{eff}}},$ where m is an odd integer, n is an integer, λ.sub.m0 is a wavelength in vacuum and n.sub.eff is an effective index of the refractive index disturbance region; the first reflective structure is formed in a section of the waveguide which has a first thickness; and the second reflective structure is formed in a section of the waveguide which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness greater than the first thickness.

2. The laser device according to claim 1, wherein a reflectivity of the second reflective structure is greater than a reflectivity of the first reflective structure.

3. The laser device according to claim 2, wherein the reflectivity of the second reflective structure is greater than 90%.

4. The laser device according to claim 2, wherein the reflectivity of the first reflective structure is between 5% and 60%.

5. The laser device according to claim 1, wherein the second reflective structure is a Bragg grating.

6. The laser device according to claim 1, wherein the first thickness is between 50 and 300 nm and wherein the second thickness is greater by at least 100 nm than the first thickness.

7. The laser device according to claim 1, wherein the first reflective structure is formed in the first transition section.

8. The laser device according to claim 1, wherein the first transition section has the second thickness.

9. The laser device according to claim 8, wherein the first reflective structure is a Bragg grating formed in the coupling section.

10. The laser device according to claim 8, wherein the first reflective structure is a Bragg grating formed in a section of the waveguide inserted between the propagation section and the first transition section.

11. The laser device according to claim 1, wherein the waveguide is a waveguide provided with a rib directed away from the amplifying medium.

12. The laser device according to claim 11, wherein the rib is located at the second transition section.

13. The laser device according to claim 11, wherein the rib is located at the first transition section and at the second transition section.

14. The laser device according to claim 1, wherein the first thickness is between 50 and 300 nm and wherein the second thickness is greater by at least 150 nm than the first thickness.

15. The laser device according to claim 12, wherein the first reflective structure is formed in the first transition section.

16. The laser device according to claim 13, wherein the first transition section has the second thickness.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Further aspects, aims, advantages and features of the invention will emerge more clearly on reading the following detailed description of preferred embodiments thereof, given by way of non-restrictive example, and with reference to the appended drawings wherein:

[0041] FIG. 1, already discussed above, is a diagram of a DFB laser on a hybrid III-V/Si platform;

[0042] FIG. 2, already discussed above, is a diagram of a DML laser on an InP substrate;

[0043] FIG. 3, already discussed above, is a diagram of a DBR laser on a hybrid III-V/Si platform;

[0044] FIG. 4 is a top view of a laser according to a first possible embodiment of the invention, this top view being accompanied by three sections taken transversely to the direction of light propagation which illustrate different regions of the laser;

[0045] FIG. 5 is a longitudinal sectional view of the laser in FIG. 4;

[0046] FIG. 6 is a top view of a laser according to a second possible embodiment of the invention, this top view being accompanied by three sections taken transversely to the direction of light propagation which illustrate different regions of the laser;

[0047] FIG. 7 is a top view of a laser according to a third possible embodiment of the invention, this top view being accompanied by three sections taken transversely to the direction of light propagation which illustrate different regions of the laser.

DETAILED DESCRIPTION

[0048] With reference to FIGS. 4 to 7, the invention relates to a laser device comprising a III-V heterostructure amplifying medium formed for example of a stack QW of quantum wells sandwiched between an N-doped InP layer 1 and a P-doped InP layer 2. The laser comprises under this amplifying medium a silicon optical waveguide, for example a slab waveguide 3 which can be topped, particularly locally, with a rib 4.

[0049] As illustrated in FIG. 5, the slab waveguide 3 can be formed in the superficial layer of a silicon-on-insulator substrate while being thus separated from a silicon substrate 6 by a buried insulator layer 7, typically made of SiO.sub.2. The waveguide is moreover covered with an insulator layer 8, typically made of SiO.sub.2, which particularly enables the bonding of the amplifying medium. As represented in the views in transverse sections B-B of FIGS. 4, 6 and 7, the slab waveguide 3 can be locally topped with a rib 4 directed away from the amplifying medium. In an alternative embodiment, this localised rib can be directed towards the amplifying medium.

[0050] The laser further comprises a first and a second reflective structure Mf, Mr allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. These reflective structures will be described in more detail hereinafter, but it can already be noted that the reflectivity of the second reflective structure Mr can be greater than the reflectivity of the first reflective structure Mf. Such an asymmetry of reflectivity makes it possible to preferentially couple the light on one side of the laser cavity. The reflectivity of the second reflective structure Mr is preferably greater than 90%, whereas the first reflective structure Mf has a reflectivity preferably between 5% and 60%.

[0051] The waveguide comprises a coupling section 51, 61, 71 facing a central portion of the amplifying medium and a propagation section 54, 64, 74 serving as an output port for the light generated by the laser. The coupling section 51, 61, 71 comprises a refractive index disturbance region 510, 610, 71 provided with micro-reflectors designed so that the resonant cavity functions in a single-mode manner. These micro-reflectors are formed by reducing the thickness of the silicon waveguide and/or by reducing the width of the silicon waveguide. There are between 10 and 200. In the figures, these micro-reflectors are represented by slots in the silicon waveguide reducing the thickness. These micro-reflectors, for example similar to the slots present in a DML laser, are embodied as described above such that the micro-reflectors have a length of

[00008]$m*\frac{{\lambda }_{m0}}{4.n_{\mathrm{eff}}}$

and are separated from one another by a distance greater than

[00009]$n*\frac{{\lambda }_{m0}}{4.n_{\mathrm{eff}}},$

where m is an odd integer, n an integer, λ.sub.m0 the wavelength in vacuum and n.sub.eff the effective index of the refractive index disturbance region. An additional quarter-wave phase shift, equivalent to the segment S of the DFB laser, can be introduced where necessary between micro-reflectors or between micro-reflector and mirror. The position of the micro-reflectors can for example be determined according to the approach presented in the article by S. O'Brien et al., “Spectral manipulation in Fabry-Perot lasers: perturbative inverse scattering approach,” J. Opt. Soc. Am. B 23, 1046-1056 (2006). The coupling section 51, 51 can comprise one or more additional regions 511, 611 on either side of the refractive index disturbance region 510, 610.

[0052] The waveguide further comprises a first transition section 52, 62, 72 arranged between the propagation section 54, 64, 74 and the coupling section 51, 61, 71. It also comprises a so-called high-reflectivity reflection section 55, 65, 75 and a second transition section 53, 63, 73 arranged between the coupling section 51, 61, 71 and the high-reflectivity section 55, 65, 75.

[0053] According to the invention, the first reflective structure Mf is formed in a section of the waveguide which has a first thickness and the second reflective structure Mr is formed in a section of the waveguide which has the first thickness and which is separated from the coupling section 51, 61, 71 by the second transition section 53, 63, 73 of the waveguide, the second transition section having a second thickness greater than the first thickness. The first thickness can be between 50 and 300 nm and the second thickness is greater by at least 100 nm, preferably at least 150 nm, than the first thickness. Within the scope of the first embodiment illustrated in FIGS. 4 and 5, the first transition section 52 forms the first reflective structure Mf of the resonant cavity.

[0054] Within the scope of the second and the third embodiment, the first reflective structure Mf of the resonant cavity is a Bragg grating supported by the waveguide inside (FIG. 6) or outside (FIG. 7) the coupling section 61, 71. The first transition section 62, 72 then has the second thickness.

[0055] In the second embodiment represented in FIG. 6, the Bragg grating forming the first reflective structure Mf is thus supported by the coupling section 61 outside the refractive index disturbance region 610, i.e. by an additional region 611 of the coupling section arranged between the refractive index disturbance region 610 and the first transition section 62.

[0056] In the third embodiment represented in FIG. 7, the Bragg grating forming the first reflective structure Mf is for its part supported by a so-called low-reflectivity section 76 inserted between the first transition section 72 and the propagation section 74.

[0057] In these embodiments, the second reflective structure Mr can for its part be formed by a Bragg grating supported by the high-reflectivity section 55, 65, 75 of the waveguide, outside the coupling section 51, 61, 71 on the side opposite the first reflective structure Mf (alternatively the high-reflectivity Bragg grating can be supported inside the coupling section). The silicon waveguide can have a small thickness at the Bragg grating forming the second reflective structure Mr, as well as where applicable at the Bragg grating forming the second reflective structure Mr. It then proves to be possible to embody Bragg gratings wherein the period is greater than in the prior art (typically more than 220 nm, for example 227 nm with a waveguide thickness of 220 nm and a wavelength of 1310 nm) which makes it possible to relax the manufacturing constraints, while having high reaction forces which makes it possible to reduce the length of the grating (again according to the same example, a grating 10 μm in length makes it possible to attain a reflectivity of 97%).

[0058] Also, unlike known DML lasers for which the facet position is defined by cleavage, the two reflective structures of the invention can be defined by lithography which enables better control of the positioning of these structures with respect to the micro-reflectors in the coupling section. Moreover, the first reflective structure of the first embodiment has a reduced length with respect to a conventional Bragg grating which makes it possible to design a laser cavity of even more reduced length.

[0059] Whereas relatively thin silicon waveguides (100 nm to 300 nm typically) are conventionally used for silicon photonic components (in respect of guidance or modulation for example), it is known that hybrid III-V/Silicon lasers require relatively large thicknesses (typically 500 nm) to design adiabatic transition sections (i.e. with no losses). The width of the waveguide is also reduced/increased in these transition sections. As illustrated by sections B-B in FIGS. 4, 6 and 7, the waveguide thus has in the second transition section 53, 63, 73 (and in the first transition section 62, 72 within the scope of the second and third embodiment) a width which is for example 3 μm (comparable to the width of the InP layer 2/quantum well stack QW) and a thickness which is for example 500 nm.

[0060] In order to form the first reflective structure by means of the first transition section 52 within the scope of the first embodiment, it is possible to adopt for it a thickness and/or a width less than the thickness and/or the width of the second transition section 53. Thus, the thickness of the first transition section 52 can be between 50 and 300 nm and/or the width thereof can be between 300 nm and 1 μrn. As represented in FIG. 5, a difference in thickness between the first transition section 52 and the second transition section 53 can be obtained with an extra thickness of silicon 4 produced in the buried insulator layer 7 locally at the second transition section 53.

[0061] Similarly, within the scope of the second and the third embodiment, the Bragg grating forming the first reflective structure is supported by a section of the waveguide which has a thickness and/or a width less than the thickness and/or the width of the transition sections 62, 72 and 63, 73 and particularly a thickness between 50 and 300 nm and/or a width between 300 nm and 1 μm. A difference in thickness can particularly be obtained by means of an additional thickness of silicon 4 produced in the buried insulator layer 7 locally at the first transition section 62, 72 and locally at the section transition section 63, 73.