Two-dimensional AIN material and its preparation method and application

Abstract

The present invention discloses a two-dimensional AlN material and its preparation method and application, wherein the preparation method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer; (4) annealing the substrate; (5) using the MOCVD process to introduce H.sub.2 to open the graphene layer and passivate the surface of the substrate; and (6) using the MOCVD process to grow a two-dimensional AlN layer. The preparation method of the present invention has the advantages that the process is simple, time saving and efficient. Besides, the two-dimensional AlN material prepared by the present invention can be widely used in HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs, and other fields.

Claims

1. A preparation method of a two-dimensional AlN material, characterized in that the method comprises the following steps: (1) selecting a substrate and its crystal orientation; (2) cleaning the surface of the substrate; (3) transferring a graphene layer to the substrate layer to achieve van der Waals bonding; (4) annealing the substrate: putting the substrate obtained in step (3) into an annealing chamber, and annealing the substrate at 950° C. to 1050° C. to obtain an atomically flat surface of the substrate; (5) transferring the substrate/graphene obtained in step (4) to an MOCVD growth chamber, and introducing H.sub.2 to open the graphene layer and passivate the surface of the substrate; wherein the specific process parameters are as follows: the substrate is heated to reach a temperature of 900° C. to 1000° C., the flow rate of H.sub.2 is maintained at 80-100 sccm, and the time for H.sub.2 introduction is 5-10 min; and (6) using the MOCVD process to grow a two-dimensional AlN layer; specifically, TMAI and NH.sub.3 are introduced at a substrate temperature of 900° C. to 1000° C. to act on the surface of the substrate, so that Al and N atoms enter between the graphene layer and the substrate layer and react to form AlN; wherein the flow rates of TMAI and NH.sub.3 are kept at 200-300 sccm and 10-30 sccm, respectively, and the time for the introduction of TMAI and NH.sub.3 is 40-60 s, so as to obtain the two-dimensional AlN material.

2. The preparation method of the two-dimensional AlN material according to claim 1, characterized in that: the substrate is an Si substrate, a sapphire substrate or an MgAl.sub.2O.sub.4 oxide substrate.

3. The preparation method of the two-dimensional AlN material according to claim 1, characterized in that the selecting the crystal orientation in step (1) is specifically as follows: if the substrate is an Si substrate, an epitaxial plane is selected that is 0.2° to 1° away from the (111) plane toward the (110) plane, wherein the orientation relationship of the crystal epitaxy is that the (0002) plane of AlN is parallel to the (111) plane of Si.

4. The preparation method of the two-dimensional AlN material according to claim 1, characterized in that the cleaning the surface of the substrate in step (2) is specifically as follows: putting the substrate in water and ultrasonically cleaning it at room temperature for 5-10 min to remove particles adhering to the surface of the substrate, then washing with ethanol to remove organic matters on the surface, and then blowing the cleaned substrate dry with high-purity dry nitrogen.

5. The preparation method of the two-dimensional AlN material according to claim 1, characterized in that the transferring a graphene layer to the substrate layer in step (3) is specifically as follows: the graphene layer is released into water, and air bubbles are removed from the surface of the graphene by a defoaming film, and then the defoamed graphene film layer is transferred to a target substrate.

6. The preparation method of the two-dimensional AlN material according to claim 1, characterized in that: the annealing the substrate in step (4) takes 0.5-1 h.

7. A two-dimensional AlN material prepared by the preparation method according to claim 1.

8. A two-dimensional AlN material according to claim 7, characterized in that: the material is composed of a substrate layer (1), a two-dimensional AlN structure layer (2), a graphene layer (3) and an AlN layer (4) from bottom to top.

9. A two-dimensional AlN material according to claim 8, characterized in that: the thickness of the substrate layer is 420-550 μm; the thickness of the two-dimensional AlN structure layer is 2-5 nm; the thickness of the graphene layer is 2-5 nm; and the thickness of the AlN layer is 300-400 nm.

10. The two-dimensional AlN material according to claim 7, wherein the material is used for preparing HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs.

11. The two-dimensional AlN material according to claim 8, wherein the material is used for preparing HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs.

12. The two-dimensional AlN material according to claim 9, wherein the material is used for preparing HEMT devices, deep ultraviolet detectors or deep ultraviolet LEDs.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic cross-sectional view of the two-dimensional AlN prepared in Example 1.

(2) FIG. 2 shows a Raman spectrum of the two-dimensional AlN prepared in Example 1.

(3) FIG. 3 shows a scanning electron microscope characterization image of the two-dimensional AlN prepared in Example 1.

(4) FIG. 4 shows an energy spectrum of the two-dimensional AlN prepared in Example 1.

DETAILED DESCRIPTION OF THE EMBODIMENTS

(5) The present invention will be further described below in detail with reference to examples, but the embodiments of the present invention are not limited thereto.

Example 1

(6) A preparation method of the two-dimensional AlN material grown on an Si substrate was used, comprising the following steps:

(7) (1) selecting a substrate and its crystal orientation: an Si substrate was used, wherein an epitaxial plane was selected that was 0.2° away from the (111) plane toward the (110) plane, and wherein the orientation relationship of the crystal epitaxy was that the (0002) plane of AlN was parallel to the (111) plane of Si;

(8) (2) cleaning the surface of the substrate: specifically, putting the Si substrate in deionized water and ultrasonically cleaning it at room temperature for 5 min to remove particles adhering to the surface of the Si substrate, then washing with ethanol to remove organic matters on the surface, and then blowing the cleaned Si substrate dry with high-purity dry nitrogen;

(9) (3) transferring a graphene layer to the substrate layer to achieve van der Waals bonding: specifically, the graphene layer was released into deionized water, and air bubbles were removed from the surface of the graphene by a defoaming film, and then the defoamed graphene film layer was transferred to the Si substrate;

(10) (4) annealing the substrate: putting the substrate obtained in step (3) into an annealing chamber, and annealing the Si substrate for 0.5 h at 950° C. to obtain an atomically flat surface of the Si substrate;

(11) (5) transferring the Si substrate/graphene obtained in step (4) to an MOCVD growth chamber, and then introducing H.sub.2 to open the graphene layer and passivate the surface of the Si substrate, wherein the specific process parameters were as follows: the substrate was heated to reach a temperature of 900° C., the flow rate of H.sub.2 was maintained at 80 sccm, and the time for H.sub.2 introduction was 5 min; and

(12) (6) using the MOCVD process to grow a two-dimensional AlN layer: specifically, after the introduction of H.sub.2, TMAl and NH.sub.3 were introduced at a substrate temperature of 900° C. to act on the surface of the substrate, so that Al and N atoms entered between the graphene layer and the substrate layer and reacted to form AlN; wherein the flow rates of TMAl and NH.sub.3 were kept at 200 sccm and 10 sccm, respectively, and the time for the introduction of TMAl and NH.sub.3 was 40 s, so as to obtain the two-dimensional AlN material.

(13) As shown in FIG. 1, the two-dimensional AlN material grown on the Si substrate prepared in this example comprised an Si substrate 1, a graphene layer 3 bonded to the Si substrate layer by a van der Waals force, a two-dimensional AlN structure 2 grown between the Si substrate layer and the graphene layer, and an AlN layer 4 grown on the graphene layer. The thicknesses of the Si substrate layer, the two-dimensional AlN structure layer, the graphene layer and the AlN layer were 420 μm, 2 nm, 4 nm and 300 nm, respectively.

(14) FIG. 2 shows a Raman spectrum of the two-dimensional AlN prepared in this example. It can be seen from the figure that the peaks at 1354 cm.sup.−1, 1588 cm.sup.−1 and 2697 cm.sup.−1 corresponded to the D peak (about 1350 cm.sup.−1), G peak (about 1587 cm.sup.−1) and 2D peak (2700 cm.sup.−1) of graphene, respectively, confirming the presence of graphene.

(15) FIG. 3 shows a scanning electron microscope characterization image of the two-dimensional AlN prepared in this example. It can be seen that the layered two-dimensional AlN was epitaxially grown on the Si substrate/graphene layer, and the wrinkle region on the surface might be caused by defects and inhomogeneity of the graphene.

(16) FIG. 4 shows an energy spectrum of the two-dimensional AlN prepared in this example. It can be seen that there were C, N, Al and Si elements in the epitaxial film, which confirmed the existence of the two-dimensional AlN and graphene.

Example 2

(17) A preparation method of the two-dimensional AlN material grown on a sapphire substrate was used, comprising the following steps:

(18) (1) selecting a substrate and its crystal orientation: a c-plane sapphire was used as a substrate, wherein an epitaxial plane was selected that was 0.6° away from the (0001) plane toward the (1-100) plane, and wherein the orientation relationship of the crystal epitaxy was that the (0002) plane of AlN was parallel to the (0001) plane of sapphire;

(19) (2) cleaning the surface of the substrate: specifically, putting the sapphire substrate in deionized water and ultrasonically cleaning it at room temperature for 8 min to remove particles adhering to the surface of the sapphire substrate, then washing with ethanol to remove organic matters on the surface, and then blowing the cleaned sapphire substrate dry with high-purity dry nitrogen;

(20) (3) transferring a graphene layer to the substrate layer to achieve van der Waals bonding: specifically, the graphene layer was released into deionized water, and air bubbles were removed from the surface of the graphene by a defoaming film, and then the defoamed graphene film layer was transferred to the sapphire substrate;

(21) (4) annealing the substrate: putting the sapphire substrate obtained in step (3) into an annealing chamber, and annealing the sapphire substrate for 1 h at 1000° C. to obtain an atomically flat surface of the sapphire substrate;

(22) (5) transferring the sapphire substrate/graphene obtained in step (4) to an MOCVD growth chamber, and then introducing H.sub.2 to open the graphene layer and passivate the surface of the sapphire substrate, wherein the specific process parameters were as follows: the substrate was heated to reach a temperature of 1000° C., the flow rate of H.sub.2 was maintained at 100 sccm, and the time for H.sub.2 introduction was 8 min; and

(23) (6) using the MOCVD process to grow a two-dimensional AlN layer: specifically, after the introduction of H.sub.2, TMAl and NH.sub.3 were introduced at a substrate temperature of 950° C. to act on the surface of the substrate, so that Al and N atoms entered between the graphene layer and the substrate layer and reacted to form AlN; wherein the flow rates of TMAl and NH.sub.3 were kept at 300 sccm and 30 sccm, respectively, and the time for the introduction of TMAl and NH.sub.3 was 60 s, so as to obtain the two-dimensional AlN material.

(24) The two-dimensional AlN material grown on the c-plane sapphire substrate prepared in this example comprised a c-plane sapphire substrate, a graphene layer bonded to the c-plane sapphire substrate layer by a van der Waals force, a two-dimensional AlN structure grown between the c-plane sapphire substrate layer and the graphene layer, and an AlN layer grown on the graphene layer. The thicknesses of the c-plane sapphire substrate layer, the two-dimensional AlN structure layer, the graphene layer and the AlN layer were 480 μm, 5 nm, 2 nm and 400 nm, respectively.

(25) The test data of the two-dimensional AlN material grown on the sapphire substrate prepared in this example were close to those in Example 1, and will not be repeated here.

Example 3

(26) A preparation method of the two-dimensional AlN material grown on an MgAl.sub.2O.sub.4 substrate was used, comprising the following steps:

(27) (1) selecting a substrate and its crystal orientation: an MgAl.sub.2O.sub.4 substrate was used, wherein an epitaxial plane was selected that was 1.0° away from the (111) plane toward the (110) plane, and wherein the orientation relationship of the crystal epitaxy was that the (0002) plane of AlN was parallel to the (111) plane of MgAl.sub.2O.sub.4;

(28) (2) cleaning the surface of the substrate: specifically, putting the MgAl.sub.2O.sub.4 substrate in deionized water and ultrasonically cleaning it at room temperature for 10 min to remove particles adhering to the surface of the MgAl.sub.2O.sub.4 substrate, then washing with ethanol to remove organic matters on the surface, and then blowing the cleaned MgAl.sub.2O.sub.4 substrate dry with high-purity dry nitrogen;

(29) (3) transferring a graphene layer to the substrate layer to achieve van der Waals bonding: specifically, the graphene layer was released into deionized water, and air bubbles were removed from the surface of the graphene by a defoaming film, and then the defoamed graphene film layer was transferred to the MgAl.sub.2O.sub.4 substrate;

(30) (4) annealing the substrate: putting the MgAl.sub.2O.sub.4 substrate obtained in step (3) into an annealing chamber, and annealing the MgAl.sub.2O.sub.4 substrate for 0.8 h at 1050° C. to obtain an atomically flat surface of the MgAl.sub.2O.sub.4 substrate;

(31) (5) transferring the MgAl.sub.2O.sub.4 substrate/graphene obtained in step (4) to an MOCVD growth chamber, and then introducing H.sub.2 to open the graphene layer and passivate the surface of the MgAl.sub.2O.sub.4 substrate, wherein the specific process parameters were as follows: the substrate was heated to reach a temperature of 950° C. , the flow rate of H.sub.2 was maintained at 90 sccm, and the time for H.sub.2 introduction was 10 min; and

(32) (6) using the MOCVD process to grow a two-dimensional AlN layer: specifically, after the introduction of H.sub.2, TMAl and NH.sub.3 were introduced at a substrate temperature of 1000° C. to act on the surface of the substrate, so that Al and N atoms entered between the graphene layer and the substrate layer and reacted to form AlN; wherein the flow rates of TMAl and NH.sub.3 were kept at 250 sccm and 25 sccm, respectively, and the time for the introduction of TMAl and NH.sub.3 was 50 s, so as to obtain the two-dimensional AlN material.

(33) The two-dimensional AlN material grown on the MgAl.sub.2O.sub.4 substrate prepared in this example comprised an MgAl.sub.2O.sub.4 substrate, a graphene layer bonded to the MgAl.sub.2O.sub.4 substrate layer by a van der Waals force, a two-dimensional AlN structure grown between the MgAl.sub.2O.sub.4 substrate layer and the graphene layer, and an AlN layer grown on the graphene layer. The thicknesses of the MgAl.sub.2O.sub.4 substrate layer, the two-dimensional AlN structure layer, the graphene layer and the AlN layer were 550 μm, 4 nm, 5 nm and 350 nm, respectively.

(34) The test data of the two-dimensional AlN material grown on the MgAl.sub.2O.sub.4 substrate prepared in this example were close to those in Example 1, and will not be repeated here.

(35) The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited thereto, and any other alterations, modifications, replacements, combinations and simplifications made without departing from the spirit and principle of the present invention should all be equivalent substitutions and included in the protection scope of the present invention.