METHOD FOR APPLYING A COATING TO A SURFACE OF A MULLITE MATERIAL, MULLITE MATERIAL HAVING A COATING, AND GAS TURBINE COMPONENT
20220213000 · 2022-07-07
Inventors
Cpc classification
F05D2220/32
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F01D5/288
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C04B41/4586
CHEMISTRY; METALLURGY
C04B41/0054
CHEMISTRY; METALLURGY
F05D2230/313
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F05D2230/90
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C04B41/4586
CHEMISTRY; METALLURGY
C04B41/0054
CHEMISTRY; METALLURGY
F05D2230/31
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C23C14/022
CHEMISTRY; METALLURGY
F05D2300/2112
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F02C7/00
MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
C04B41/4558
CHEMISTRY; METALLURGY
C04B41/91
CHEMISTRY; METALLURGY
C04B2235/3463
CHEMISTRY; METALLURGY
International classification
C04B41/45
CHEMISTRY; METALLURGY
C04B41/00
CHEMISTRY; METALLURGY
C04B41/53
CHEMISTRY; METALLURGY
C04B41/91
CHEMISTRY; METALLURGY
C23C14/00
CHEMISTRY; METALLURGY
C23C14/32
CHEMISTRY; METALLURGY
Abstract
A method for applying a coating 1 to a surface 2 of a mullite material 3 is specified, which comprises pretreating the surface 2 of the mullite material 3 by means of a plasma-chemical process in which molecular hydrogen is excited in such a way that plasma-activated hydrogen is produced S1, and applying an aluminum oxide-containing layer 4 by means of a PVD process to the pretreated surface 2 of the mullite material 3 S2. Furthermore, a mullite material 3 with a coating and a gas turbine component with such a mullite material 3 are specified.
Claims
1. A method for applying a coating to a surface of a mullite material comprising: pre-treating the surface of the mullite material using a plasma-chemical process in which molecular hydrogen is excited in such a way that plasma-activated hydrogen is produced, and applying an aluminum oxide-containing layer on the pretreated surface of the mullite material using a PVD process.
2. The method according to claim 1, wherein the pretreatment is carried out using the plasma-chemical process in such a way that silicon is removed from silicon-containing phases of the surface of the mullite material.
3. The method according to claim 1, wherein the pretreatment using the plasma-chemical process is carried out in such a way that the pretreated surface of the mullite material comprises α-Al.sub.2O.sub.3.
4. The method according to claim 1, wherein the plasma-chemical process is carried out at a total pressure between 5×10.sup.−3 mbar and 5×10.sup.−2 mbar.
5. The method according to claim 1, wherein the PVD process is reactive cathodic spark evaporation or sputtering.
6. The method according to claim 1, wherein the aluminum oxide-containing layer is applied as an essentially single-phase layer.
7. The method according to claim 1, wherein the aluminum oxide-containing layer is deposited as a layer with metallic macroparticles.
8. The method according to claim 1, wherein the aluminum oxide-containing layer comprises at least one of the group consisting of chromium, titanium, hafnium, yttrium, erbium, silicon and zirconium.
9. The method according to claim 1 further comprising: heat treating the applied aluminum oxide-containing layer at a temperature in the range between 900° C. and 1400° C. for a time period between 15 min and 60 min.
10. The method according to claim 1 further comprising: oxidizing the applied aluminum oxide-containing layer using an oxygen plasma.
11. The method according to claim 1 further comprising: infiltrating the surface of the mullite material with an aluminum-containing material before pretreating the surface of the mullite material using the plasma-chemical process.
12. A mullite material comprising an aluminum oxide-containing layer arranged on a surface of the mullite material, wherein spike-like structures with tips directed into the aluminum oxide-containing layer are formed in a boundary area between the mullite material and the aluminum oxide-containing layer.
13. The mullite material according to claim 12, wherein the spike-like structures comprise an aluminum oxide-containing material or consist of aluminum oxide.
14. The mullite material according to claim 12, wherein the spike-like structures have a width b between 50 nm and 200 nm and a height h between 100 nm and 500 nm.
15. The mullite material according to claim 12, wherein a layer thickness of the aluminum oxide-containing layer is between 0.5 μm and 50 μm.
16. The mullite material according to claim 12, wherein the aluminum oxide-containing layer is essentially single-phase.
17. The mullite material according to claim 12, wherein the aluminum oxide-containing layer comprises metallic macroparticles.
18. The mullite material according to claim 12, wherein the aluminum oxide-containing layer comprises at least one of the group consisting of chromium, titanium, hafnium, yttrium, erbium, silicon and zirconium.
19. A gas turbine component comprising the mullite material according to claim 12.
Description
[0051] The invention is explained in more detail below with reference to the figures and the associated description. It is shown in:
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[0060] In
[0061] The aluminum oxide-containing layer 4 can consist, for example, of aluminum oxide. However, it can also contain other elements, such as chromium. The aluminum oxide-containing layer 4 was applied by means of a PVD process, preferably by means of reactive cathodic spark evaporation.
[0062] With reference to
[0063] In a first method step S1, the surface 2 of the mullite material 3 is pretreated. For this purpose a plasma-chemical process is used, in which molecular hydrogen is excited in such a way that plasma-activated hydrogen is produced, which acts on the surface 2. As a result, silicon is removed from the uppermost atomic layers of phases containing silicon so that a surface 2 is produced, which essentially contains only α-Al.sub.2O.sub.3 in different grain sizes.
[0064] Specifically, the pretreatment can be carried out, for example, as described below. First, the substrate is introduced into a coating chamber with a coating device. To generate the plasma-activated hydrogen (reactive hydrogen plasma), the coating chamber contains, in addition to a coating device, a further device with which an arc discharge can be generated and which consists of a cathode and an anode.
[0065] Depending on the application, the anode can be isolated from the coating chamber, i.e. also isolated from ground (or earth), or at the same potential as the coating chamber, or the anode can be realized by the conductive substrate holder. The arc discharge is operated with a noble gas, typically argon. This is introduced into the space between the cathode and anode, preferably near the cathode, and the flow of argon is chosen so that a pressure between 1×10.sup.−4 mbar and 1×10.sup.−2 mbar is produced in the coating chamber. The arc discharge is then ignited by a suitable ignition device. Such an arc discharge is characterized by high discharge currents (10 A-400 A) and low discharge voltages (20V-40V).
[0066] After the arc discharge has been ignited, the reactive gas to be activated, namely hydrogen, is added to it, the flow of the hydrogen gas being selected so that a total pressure of between 5×10.sup.−3 mbar and 5×10.sup.−2 mbar is produced in the coating chamber. In the arc discharge, the added hydrogen gas is dissociated, atomized, excited and ionized. This creates very reactive hydrogen, which can react with elements of the substrate surface to be coated and form gaseous, volatile compounds with elements such as Si or C, which compounds can be pumped off.
[0067] The result of this surface pretreatment in the hydrogen plasma is a surface from which both silicon, which is in the surface of the mullite material, and undesirable carbon-based impurities are removed. The cleaning depth of such a process is limited to the penetration depth of the activated hydrogen, i.e. to typical penetration depths in the range of 10 nm-100 nm. These modifications of the surface close to the substrate are of course not sufficient to achieve, for example, permanent protection against the volatilization of silicon under water vapor at high temperatures (over 1000° C.).
[0068] It is necessary that, after the hydrogen plasma treatment, the mullite material is protected by an additional layer, which is inert to reactive hydrogen.
[0069] In a subsequent method step S2, an aluminum oxide-containing layer 4 is therefore applied to the pretreated surface 2. The coating is preferably carried out directly after the pretreatment in the same coating chamber and without interrupting the vacuum. A PVD process, e.g. reactive cathodic spark evaporation or sputtering, is used for the coating.
[0070] After method step S2, the applied aluminum oxide-containing layer 4 can be post-treated. There are two ways of doing this. Either the aluminum oxide-containing layer 4 is subjected to a heat treatment in process step S3, e.g. for 30 min at 1200° C., or the aluminum oxide-containing layer 4 is oxidized in process step S4 by means of an oxygen plasma.
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[0073] The spike-like structures 6 lead to a significantly improved bonding or adhesion between the mullite material 3 and the aluminum oxide-containing layer 4.
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[0076] In the boundary area 7 between the mullite material 3 and the aluminum oxide-containing layer 4, spike-like structures 6 can be seen which begin at the boundary area between the mullite material 3 and the aluminum oxide-containing layer 4 or the surface 2. The tips 8 of the spike-like structures 6 are directed into the aluminum oxide-containing layer 4. The width b of a spike-like structure 6 is between 50 nm and 200 nm, while the height h is between 100 nm and 500 nm.