Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module, and method for manufacturing thermoelectric conversion

Abstract

A thermoelectric conversion material consists of a non-doped sintered body of a magnesium-based compound, in which an electric resistance value is 1.0×10.sup.−4 Ω.Math.m or less. The magnesium-based compound is preferably one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

Claims

1. A thermoelectric conversion material consisting of: a non-doped sintered body of a magnesium-based compound, wherein an electric resistance value is 1.0×10.sup.−4 Ω.Math.m or less, the magnesium-based compound contains 0.1 mass % or more and 10.0 mass % or less of silicon oxide, and the magnesium-based compound is one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

2. The thermoelectric conversion material according to claim 1, wherein the thermoelectric conversion material is n-type.

3. The thermoelectric conversion material according to claim 1, wherein the magnesium-based compound is one or more selected from a MgSi-based compound, a MgSn-based compound, and a MgSiGe-based compound.

4. The thermoelectric conversion material according to claim 1, wherein the magnesium-based compound is a sintered body of a sintering raw material containing silicon oxide powder and non-doped magnesium-based compound powder.

5. A thermoelectric conversion element comprising: the thermoelectric conversion material according to claim 1; and electrodes respectively joined to one surface of the thermoelectric conversion material and the other surface opposite the one surface.

6. A thermoelectric conversion module comprising: the thermoelectric conversion element according to claim 5; and terminals respectively joined to the electrodes of the thermoelectric conversion element.

7. A method for manufacturing the thermoelectric conversion material according to claim 1, the method comprising: a sintering raw material powder forming step of mixing a silicon oxide powder with a non-doped magnesium-based compound powder to obtain a sintering raw material powder; and a sintering step of heating the sintering raw material powder while applying pressure to form a sintered body.

8. The method for manufacturing the thermoelectric conversion material according to claim 7, wherein an addition amount of the silicon oxide powder in the sintering raw material powder forming step is in a range of 0.1 mass % or more and 10.0 mass % or less.

Description

BRIEF DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a sectional view showing a thermoelectric conversion material according to an embodiment of the present invention, a thermoelectric conversion element using the same, and a thermoelectric conversion module.

(2) FIG. 2 is a flowchart showing an example of a method for manufacturing a thermoelectric conversion material according to an embodiment of the present invention.

(3) FIG. 3 is a sectional view showing an example of a sintering apparatus used in the method for manufacturing a thermoelectric conversion material shown in FIG. 2.

DESCRIPTION OF EMBODIMENTS

(4) Hereinafter, a thermoelectric conversion material according to an embodiment of the present invention, a thermoelectric conversion element, a thermoelectric conversion module, and a method for manufacturing a thermoelectric conversion material will be described with reference to the accompanying drawings.

(5) Each embodiment to be described below is specifically described for better understanding of the gist of the invention, and does not limit the present invention unless otherwise specified. In addition, in the drawings used in the following description, for convenience, in order to make the features of the present invention easy to understand, a portion that is a main part may be enlarged in some cases, and a dimensional ratio or the like of each component is not always the same as an actual one.

(6) FIG. 1 shows a thermoelectric conversion material 11 according to an embodiment of the present invention, a thermoelectric conversion element 10 using the thermoelectric conversion material 11, and a thermoelectric conversion module 1.

(7) The thermoelectric conversion module 1 shown in FIG. 1 includes the thermoelectric conversion material 11 according to the present embodiment, electrodes 12a and 12b respectively formed on one surface 11a of the thermoelectric conversion material 11 and the other surface 11b opposite the one surface, and terminals 13a and 13b respectively connected to the electrodes 12a and 12b.

(8) A part including the thermoelectric conversion material 11 and the electrodes 12a and 12b forms the thermoelectric conversion element 10.

(9) For the electrodes 12a and 12b, nickel, silver, cobalt, tungsten, molybdenum, or the like is used. The electrodes 12a and 12b can be formed by electric sintering, plating, electrodeposition, or the like.

(10) The terminals 13a and 13b are formed of a metal material excellent in conductivity, for example, a plate material such as copper or aluminum. In the present embodiment, a rolled aluminum plate is used. In addition, the electrodes 12a and 12b and the terminals 13a and 13b of the thermoelectric conversion element 10 can be respectively joined together, by Ag brazing, Ag plating, or the like.

(11) The thermoelectric conversion material 11 according to the present embodiment is formed of a sintered body of a magnesium-based compound.

(12) Here, the magnesium-based compound forming the sintered body is preferably one or more selected from a MgSi-based compound, a MgSn-based compound, a MgSiSn-based compound, and a MgSiGe-based compound.

(13) In the present embodiment, the compound forming the sintered body is magnesium silicide (Mg.sub.2Si).

(14) The thermoelectric conversion material 11 of the present embodiment is a non-doped thermoelectric conversion material, and has an electric resistance value of 1.0×10.sup.−4 Ω.Math.m or less in a temperature range of 100° C. or higher and 550° C. or lower. The electric resistance value of the thermoelectric conversion material 11 in a temperature range of 100° C. or higher and 550° C. or lower is preferably 6.0×10.sup.−5 Ω.Math.m or less.

(15) The lower limit of the electric resistance value of the thermoelectric conversion material 11 in the temperature range of 100° C. or higher and 550° C. or lower is preferably 1.0×10.sup.−5 Ω.Math.m.

(16) In addition, the thermoelectric conversion material 11 according to the present embodiment is an n-type thermoelectric conversion material in which electrons serve as carriers.

(17) Here, “non-doped” means that a dopant of a metal element is not added intentionally.

(18) However, the dopant element such as Sb, Bi, or Al is contained as inevitable impurities, in some cases. In this case, it is preferable that the amount of Sb is less than 0.001 mass %, the amount of Bi is less than 0.001 mass %, and the amount of Al is 0.25 mass % or less. In addition to Sb, Bi, and Al, elements such as Na, K, B, Ga, In, P, As, Cu, and Y are contained as inevitable impurities, in some cases. Also in this case, the amount of each element is preferably 0.01 mass % or less.

(19) In the thermoelectric conversion material 11 according to the present embodiment, the electric resistance value is 1.0×10.sup.−4 Ω.Math.m or less. Therefore, although the dopant element mixed as an inevitable impurity is very small, the electric resistance value is suppressed sufficiently to be low.

(20) Here, in the present embodiment, the electric resistance value is suppressed to be low by adding a silicon oxide. It is considered that the oxygen constituting the silicon oxide added reacts with Mg in the magnesium-based compound during sintering to form a magnesium oxide, while Si constituting the silicon oxide segregates at a grain boundary of the magnesium-based compound, and forms a dangling bond to reduce the resistance or is diffused into a Mg compound, enters a Mg lattice site, and emits electrons to lower the electric resistance. In the silicon oxide added, unreacted silicon oxide may be contained in the thermoelectric conversion material 11 in some cases.

(21) Hereinafter, an example of a method for manufacturing the thermoelectric conversion material 11 according to the present embodiment described above will be described with reference to FIGS. 2 and 3.

Magnesium-Based Compound Powder Preparing Step S01

(22) First, a non-doped powder of a magnesium-based compound (magnesium silicide) which is a parent phase of a sintered body which is the thermoelectric conversion material 11, is manufactured.

(23) In the present embodiment, a magnesium-based compound powder preparing step S01 includes a magnesium-based compound ingot forming step S11 for obtaining a non-doped ingot of a magnesium-based compound (magnesium silicide), and a pulverizing step S12 of pulverizing the magnesium-based compound ingot (magnesium silicide) to obtain a magnesium-based compound powder.

(24) In the magnesium-based compound ingot forming step S11, a raw material powder to be melted is weighed and mixed. In the present embodiment, since the magnesium-based compound is the magnesium silicide, the raw material to be melted is silicon particles and magnesium particles.

(25) In the present embodiment, in the silicon particles and the magnesium particles, it is preferable that the content of Sb is less than 0.001 mass %, the content of Bi is less than 0.001 mass %, and the content of Al is 0.25 mass % or less, and is further preferable that the content of each element of Na, K, B, Ga, In, P, As, Cu, and Y is 0.01 mass % or less.

(26) Then, this mixture is charged into a crucible in an atmosphere melting furnace and melted, and then cooled and solidified. Accordingly, an ingot of the magnesium-based compound (magnesium silicide) is manufactured.

(27) Since a small amount of magnesium sublimates during heating, it is preferable to add a large amount of magnesium, for example, approximately 5 at % to a stoichiometric composition of Mg:Si=2:1 when measuring the raw materials.

(28) In the pulverizing step S12, the obtained ingot of the magnesium-based compound (magnesium silicide) is pulverized by a pulverizer to form a magnesium-based compound powder (magnesium silicide powder) (pulverizing step S12).

(29) The average particle size of the magnesium-based compound powder (magnesium silicide powder) is preferably in a range of 0.5 μm or larger and 100 μm or smaller, and further preferably in a range of 1 μm or larger and 75 μm or smaller.

(30) In a case where a commercially available non-doped magnesium-based compound powder (magnesium silicide powder) is used, the magnesium-based compound ingot forming step S11 and the pulverizing step S12 can be omitted.

Sintering Raw Material Powder Forming Step S02

(31) Next, a silicon oxide powder is mixed with the obtained magnesium-based compound powder (magnesium silicide powder) to obtain a sintering raw material powder.

(32) Here, the addition amount of the silicon oxide powder is preferably in a range of 0.1 mass % or more and 10.0 mass % or less, and more preferably in a range of 0.3 mass % or more and 5.0 mass % or less.

(33) In addition, the average particle size of the silicon oxide powder is preferably in a range of 0.1 μm or larger and 100 μm or smaller, and more preferably in a range of 0.5 μm or larger and 50 μm or smaller.

(34) Further, the silicon oxide to be added may be SiOx (X=1 to 2). Further, the silicon oxide to be added may be either amorphous or crystalline.

Sintering Step S03

(35) Next, the sintering raw material powder obtained as described above is heated while applying pressure to obtain a sintered body.

(36) In the present embodiment, in the sintering step S03, a sintering apparatus (an electric sintering apparatus 100) shown in FIG. 3 is used.

(37) The sintering apparatus (electric sintering apparatus 100) shown in FIG. 3 includes, for example, a pressure-resistant housing 101, a vacuum pump 102 for reducing the pressure inside the pressure-resistant housing 101, and a hollow tubular carbon mold 103 disposed inside the pressure-resistant housing 101, a pair of electrode portions 105a and 105b for applying a current while pressing a sintering raw material powder Q with which the carbon mold 103 is filled, and a power supply device 106 for applying a voltage between the pair of electrode portions 105a and 105b. In addition, a carbon plate 107 and a carbon sheet 108 are respectively provided between the electrode portions 105a and 105b and the sintering raw material powder Q. In addition to these, a thermometer, a displacement gauge, and the like (which are not shown) are provided.

(38) In addition, in the present embodiment, a heater 109 is provided on an outer peripheral side of the carbon mold 103. The heater 109 are disposed on four sides so as to cover the entire outer peripheral side of the carbon mold 103. As the heater 109, a carbon heater, a nichrome wire heater, a molybdenum heater, a Kanthal wire heater, a high frequency heater, or the like can be used.

(39) In a sintering step S03, first, the carbon mold 103 of the electric sintering apparatus 100 shown in FIG. 3 is filled with the sintering raw material powder Q. For example, an inside of the carbon mold 103 is covered with a graphite sheet or a carbon sheet. Then, a direct current is applied between the pair of electrode portions 105a and 105b by using the power supply device 106, and the current is applied to the sintering raw material powder Q. Accordingly, a temperature increases by self-heating (electric heating). In addition, between the pair of electrode portions 105a and 105b, the electrode portion 105a on a movable side is caused to move toward the sintering raw material powder Q, and the sintering raw material powder Q is pressed at a predetermined pressure between the electrode portion 105a and the electrode portion 105b on a fixed side. In addition, the heater 109 is heated.

(40) Accordingly, the sintering raw material powder Q is sintered by the self-heating of the sintering raw material powder Q, the heat from the heater 109, and the pressing.

(41) In the present embodiment, sintering conditions in the sintering step S03 are as follows: a heating temperature of the sintering raw material powder Q is in a range of 850° C. or higher and 1030° C. or lower, and a holding time at the heating temperature is in a range of 0 minutes or longer and 3 minutes or shorter. In addition, pressing load is in a range of 15 MPa or more and 60 MPa or less.

(42) In addition, an atmosphere in the pressure-resistant housing 101 may be an inert atmosphere such as an argon atmosphere or a vacuum atmosphere. When the vacuum atmosphere is set, the pressure may be set to 5 Pa or less.

(43) The lower limit of the heating temperature of the sintering raw material powder is preferably 850° C. or higher. On the other hand, the upper limit of the heating temperature of the sintering raw material powder is preferably 1030° C. or lower.

(44) In addition, the lower limit of the holding time at the heating temperature is preferably 0 minutes or longer. On the other hand, the upper limit of the holding time at the heating temperature is preferably 3 minutes or shorter.

(45) Further, the lower limit of the pressing load is preferably 15 MPa or more. On the other hand, the upper limit of the pressing load is preferably 60 MPa or less.

(46) Thus, in the sintering step S03, when the direct current is applied to the sintering raw material powder Q, polarities of the one electrode portion 105a and the other electrode portion 105b may change at a predetermined time interval. That is, an energizing state in which the one electrode portion 105a is used as an anode and the other electrode portion 105b is used as a cathode, and an energizing state in which the one electrode portion 105a is used as a cathode and the other electrode portion 105b is used as an anode are implemented alternately. In the present embodiment, the predetermined time interval is set within a range of 10 seconds or longer and to 300 seconds or shorter. The predetermined time interval is preferably in a range of 30 seconds or longer and 120 seconds or shorter.

(47) According to the above steps, the thermoelectric conversion material 11 according to the present embodiment is manufactured. As described above, in the silicon particles and the magnesium particles, the amount of Sb is less than 0.001 mass %, the amount of Bi is less than 0.001 mass %, and the amount of Al is 0.25 mass % or less, and the amount of each element of Na, K, B, Ga, In, P, As, Cu, and Y is 0.01 mass % or less, and no dopant is added. Therefore, even in the thermoelectric conversion material including the sintered body of the magnesium-based compound, the amount of Sb is less than 0.001 mass %, the amount of Bi is less than 0.001 mass %, the amount of Al is 0.25 mass % or less, and the amount of each element such as Na, K, B, Ga, In, P, As, Cu, and Y becomes 0.01 mass % or less.

(48) According to the thermoelectric conversion material 11 of the present embodiment configurated described above, the thermoelectric conversion material can be relatively easily manufactured without using the dopant element, in particular, without using Sb, Bi, or Al, which is difficult to handle, as the dopant element.

(49) In addition, since the electric resistance value is suppressed to be low as 1.0×10.sup.−4 Ω.Math.m or less, the power factor (PF) and the dimensionless figure of merit (ZT) increase, and excellent thermoelectric property is obtained.

(50) Further, according to the present embodiment, since the magnesium-based compound forming the thermoelectric conversion material 11 is one or more selected from the MgSi-based compound, the MgSn-based compound, the MgSiSn-based compound, and the MgSiGe-based compound, the thermoelectric conversion material 11 further excellent in the thermoelectric property can be obtained.

(51) In addition, according to the thermoelectric conversion material 11 of the present embodiment, the n-type thermoelectric conversion material can be obtained without intentionally adding the dopant of a metal element such as Sb, Bi, or Al which is difficult to handle.

(52) In addition, according to the method for manufacturing the thermoelectric conversion material according to the present embodiment, the method includes the sintering raw material powder forming step S02 of mixing the silicon oxide powder with the non-doped magnesium-based compound powder (magnesium silicide powder) to obtain a sintering raw material powder, and the sintering step S03 of heating the sintering raw material powder Q while applying pressure to form the sintered body. Therefore, the thermoelectric conversion material 11 according to the present embodiment described above can be manufactured.

(53) Furthermore, in the present embodiment, the electric resistance value of the sintered body of the magnesium-based compound (magnesium silicide) can be suppressed to be low by adding silicon oxide, without adding the dopant element. In addition, since the silicon oxide is a relatively stable substance, it is easy to handle the silicon oxide during manufacturing, and the thermoelectric conversion material 11 can be manufactured efficiently.

(54) The thermoelectric conversion element 10 and the thermoelectric conversion module 1 according to the present embodiment include the thermoelectric conversion material 11 described above, and thus are excellent in the thermoelectric property. Accordingly, it is possible to configure a thermoelectric conversion device excellent in the thermoelectric conversion efficiency.

(55) As described above, the embodiments of the present invention are described. However, the present invention is not limited thereto, and can be appropriately modified without departing from the technical idea of the present invention.

(56) For example, in the present embodiment, it was described that the thermoelectric conversion element and the thermoelectric conversion module having a structure as shown in FIG. 1 are configured. However, the present invention is not limited thereto, and there is no particular limitation on a structure and disposition of the electrodes or terminals, as long as the thermoelectric conversion material of the present embodiment is used.

(57) In addition, in the present embodiment, it was described that the magnesium-based compound forming the sintered body is the magnesium suicide (Mg.sub.2Si). However, the present invention is not limited thereto, and a magnesium-based compound having another composition may be used, as long as the compound has a thermoelectric property.

(58) For example, the magnesium-based compound forming the non-doped sintered body may be obtained by adding a predetermined silicon oxide to one or more selected from MgSi-based compound, the MgSn-based compound, the MgSiSn-based compound, and the MgSiGe-based compound.

EXAMPLES

(59) Hereinafter, results of experiments performed to confirm the effects of the present invention will be described.

(60) Mg with a purity of 99.9 mass % (manufactured by Kojundo Chemical Lab. Co., Ltd., granular φ 6 mm×6 mmL) and Si with a purity of 99.999 mass % (manufactured by Kojundo Chemical Lab. Co., Ltd., granular 2 to 5 mm) were weighed. In consideration of deviation from Mg:Si=2:1 of a stoichiometric composition due to sublimation of Mg, Mg was mixed by 5 at % more.

(61) The weighed raw material particles described above were charged into a crucible in an atmosphere melting furnace and melted, and then cooled and solidified. Accordingly, an ingot of the magnesium-based compound (magnesium silicide) was manufactured.

(62) Next, this ingot was pulverized and classified to obtain a non-doped magnesium-based compound powder (magnesium silicide powder) having an average particle size of 30 μm.

(63) In addition, a silicon oxide powder (SiO.sub.2 powder) having an average particle size of 15 μm was prepared, and the magnesium silicide powder and the silicon oxide powder were mixed to each other to obtain a sintering raw material powder. In this case, as shown in Table 1, the amount of the silicon oxide powder was adjusted. In a comparative example, no silicon oxide was added.

(64) A carbon mold whose inside was covered with a carbon sheet was filled with the obtained sintering raw material powder. Thus, electric sintering was performed by the sintering apparatus (electric sintering apparatus 100) shown in FIG. 3. The electric sintering conditions were set to atmosphere: vacuum (5 Pa or less), sintering temperature: 940° C., holding time at the sintering temperature: 30 seconds, and pressure load: 40 MPa.

(65) In this manner, the thermoelectric conversion materials of present examples and the comparative example were obtained.

(66) The obtained thermoelectric conversion materials were evaluated for the amount of each of Sb, Bi, Al, Na, K, B, Ga, In, P, As, Cu, and Y, an electric resistance value (R), a Seebeck coefficient (S), a power factor (PF), a thermal conductivity (κ), and a dimensionless figure of merit (ZT).

(67) The amount of each element was measured by high frequency inductively coupled plasma emission spectroscopy using SPS3500 (manufactured by Seiko Instruments Inc.). Table 1 shows evaluation results.

(68) The electric resistance value R and the Seebeck coefficient S were measured by ZEM-3 (manufactured by Advance Riko, Inc.). The measurement was performed at 100° C., 200° C., 300° C., 400° C., 500° C., and 550° C.

(69) The power factor (PF) was determined from Equation (1) below.
PF=S.sup.2/R  (1)

(70) S: Seebeck coefficient (V/K), R: Electric resistance value (Ω.Math.m)

(71) The thermal conductivity κ was determined from “thermal diffusivity×density×specific heat capacity”. The thermal diffusivity was measured using a thermal constant measuring device (Model TC-7000 manufactured by Vacuum Riko, Inc). The density was measured using an Archimedes method. The specific heat was measured using a differential scanning calorimeter (Model DSC-7 manufactured by Perkin Elmer). The measurement was performed at 100° C., 200° C., 300° C., 400° C., 500° C., and 550° C. The dimensionless figure of merit (ZT) was determined from Equation (2) below.
ZT=S.sup.2σT/κ  (2)

(72) T=Absolute temperature (K), κ=Thermal conductivity (W/(m×K))

(73) Tables 2 to 6 show evaluation results.

(74) TABLE-US-00001 TABLE 1 Silicon oxide Addition amount Amount of each element in thermoelectric conversion material (mass %) Kind (mass %) Sb Bi Al Na K B Ga In P As Cu Y Present Amorphous 1.0 0.001 0.001 0.11 0.001 0.005 0.008 0.001 0.004 0.002 0.001 0.002 0.0001 Example 1 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Present Amorphous 3.0 0.001 0.001 0.11 0.001 0.005 0.004 0.001 0.004 0.002 0.001 0.002 0.0001 Example 2 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Present Amorphous 3.0 0.001 0.001 0.12 0.001 0.005 0.005 0.001 0.004 0.002 0.001 0.003 0.0001 Example 3 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Present Amorphous 5.0 0.001 0.001 0.10 0.001 0.005 0.005 0.001 0.004 0.002 0.001 0.002 0.0001 Example 4 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Present Amorphous 1.0 0.001 0.001 0.09 0.001 0.005 0.007 0.001 0.004 0.002 0.001 0.004 0.0001 Example 5 SiO.sub.2 25 μm or less or less or less or less or less or less or less or less or less Present Amorphous 1.0 0.001 0.001 0.08 0.001 0.005 0.003 0.001 0.004 0.002 0.001 0.002 0.0001 Example 6 SiO.sub.2 4 μm or less or less or less or less or less or less or less or less or less Present SiO.sub.2 2.0 0.001 0.001 0.21 0.001 0.005 0.007 0.001 0.004 0.002 0.001 0.004 0.0001 Example 7 38 μm or less or less or less or less or less or less or less or less or less Present Amorphous 0.5 0.001 0.001 0.06 0.001 0.005 0.002 0.001 0.004 0.002 0.001 0.002 0.0001 Example 8 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Present Amorphous 0.1 0.001 0.001 0.01 0.001 0.005 0.001 0.001 0.004 0.002 0.001 0.001 0.0001 Example 9 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Present Amorphous 10.0 0.001 0.001 0.24 0.001 0.005 0.009 0.001 0.004 0.002 0.001 0.005 0.0001 Example 10 SiO.sub.2 15 μm or less or less or less or less or less or less or less or less or less Comparative — 0.0 0.001 0.001 0.12 0.001 0.005 0.005 0.001 0.004 0.002 0.001 0.003 0.0001 Example or less or less or less or less or less or less or less or less or less

(75) TABLE-US-00002 TABLE 2 Electric resistance value (Ω .Math. m) 100° C. 200° C. 300° C. 400° C. 500° C. 550° C. Present 2.18 × 10.sup.−5 2.58 × 10.sup.−5 3.26 × 10.sup.−5 4.05 × 10.sup.−5 4.57 × 10.sup.−5 4.69 × 10.sup.−5 Example 1 Present 2.87 × 10.sup.−5 3.35 × 10.sup.−5 4.26 × 10.sup.−5 5.25 × 10.sup.−5 5.89 × 10.sup.−5 5.96 × 10.sup.−5 Example 2 Present 2.76 × 10.sup.−5 3.23 × 10.sup.−5 4.04 × 10.sup.−5 5.06 × 10.sup.−5 5.59 × 10.sup.−5 5.66 × 10.sup.−5 Example 3 Present 2.52 × 10.sup.−5 2.93 × 10.sup.−5 3.66 × 10.sup.−5 4.58 × 10.sup.−5 5.23 × 10.sup.−5 5.32 × 10.sup.−5 Example 4 Present 1.85 × 10.sup.−5 2.23 × 10.sup.−5 2.78 × 10.sup.−5 3.45 × 10.sup.−5 3.99 × 10.sup.−5 4.20 × 10.sup.−5 Example 5 Present 2.32 × 10.sup.−5 2.83 × 10.sup.−5 3.41 × 10.sup.−5 4.26 × 10.sup.−5 4.97 × 10.sup.−5 5.48 × 10.sup.−5 Example 6 Present 2.57 × 10.sup.−5 3.03 × 10.sup.−5 3.86 × 10.sup.−5 4.51 × 10.sup.−5 5.02 × 10.sup.−5 5.33 × 10.sup.−5 Example 7 Present 1.65 × 10.sup.−5 2.09 × 10.sup.−5 2.69 × 10.sup.−5 3.45 × 10.sup.−5 4.03 × 10.sup.−5 4.23 × 10.sup.−5 Example 8 Present 2.49 × 10.sup.−5 2.56 × 10.sup.−5 3.11 × 10.sup.−5 3.81 × 10.sup.−5 4.49 × 10.sup.−5 5.26 × 10.sup.−5 Example 9 Present 3.54 × 10.sup.−5 4.00 × 10.sup.−5 4.81 × 10.sup.−5 5.30 × 10.sup.−5 5.89 × 10.sup.−5 6.47 × 10.sup.−5 Example 10 Comparative 2.79 × 10.sup.4  — — — 2.76 × 10.sup.4  2.75 × 10.sup.4  Example

(76) TABLE-US-00003 TABLE 3 Seebeck coefficient S (V/K) 100° C. 200° C. 300° C. 400° C. 500° C. 550° C. Present −2.34 × 10.sup.−4 −2.52 × 10.sup.−4 −2.71 × 10.sup.−4 −2.91 × 10.sup.−4 −2.98 × 10.sup.−4 −2.92 × 10.sup.−4 Example 1 Present −2.24 × 10.sup.−4 −2.51 × 10.sup.−4 −2.73 × 10.sup.−4 −2.93 × 10.sup.−4 −2.96 × 10.sup.−4 −2.90 × 10.sup.−4 Example 2 Present −2.30 × 10.sup.−4 −2.59 × 10.sup.−4 −2.83 × 10.sup.−4 −3.01 × 10.sup.−4 −3.03 × 10.sup.−4 −2.93 × 10.sup.−4 Example 3 Present −2.17 × 10.sup.−4 −2.40 × 10.sup.−4 −2.64 × 10.sup.−4 −2.84 × 10.sup.−4 −2.89 × 10.sup.−4 −2.82 χ 10.sup.−4 Example 4 Present −2.22 × 10.sup.−4 −2.51 × 10.sup.−4 −2.70 × 10.sup.−4 −2.91 × 10.sup.−4 −2.99 × 10.sup.−4 −2.90 × 10.sup.−4 Example 5 Present −2.32 × 10.sup.−4 −2.53 × 10.sup.−4 −2.73 × 10.sup.−4 −2.96 × 10.sup.−4 −2.97 × 10.sup.−4 −2.93 × 10.sup.−4 Example 6 Present −2.31 × 10.sup.−4 −2.57 × 10.sup.−4 −2.75 × 10.sup.−4 −2.99 × 10.sup.−4 −2.96 × 10.sup.−4 −2.91 × 10.sup.−4 Example 7 Present −2.04 × 10.sup.−4 −2.03 χ 10.sup.−4 −2.55 × 10.sup.−4 −2.78 × 10.sup.−4 −2.86 × 10.sup.−4 −2.84 × 10.sup.−4 Example 8 Present −2.21 × 10.sup.−4 −2.35 × 10.sup.−4 −2.68 × 10.sup.−4 −2.83 × 10.sup.−4 −2.93 × 10.sup.−4 −2.99 × 10.sup.−4 Example 9 Present −2.51 × 10.sup.−4 −2.71 × 10.sup.−4 −2.86 × 10.sup.−4 −2.97 × 10.sup.−4 −3.12 × 10.sup.−4 −3.31 × 10.sup.−4 Example 10 Comparative  2.29 × 10.sup.−2 — −3.55 × 10.sup.−3 —  5.92 × 10.sup.−2 −6.14 × 10.sup.−3 Example

(77) TABLE-US-00004 TABLE 4 PF (W/(m .Math. K.sup.2)) 100° C. 200° C. 300° C. 400° C. 500° C. 550° C. Present 2.51 × 10.sup.−3 2.43 × 10.sup.−3 2.26 × 10.sup.−3 2.09 × 10.sup.−3 1.94 × 10.sup.−3 1.81 × 10.sup.−3 Example 1 Present 1.75 × 10.sup.−3 1.88 × 10.sup.−3 1.75 × 10.sup.−3 1.63 × 10.sup.−3 1.48 × 10.sup.−3 1.41 × 10.sup.−3 Example 2 Present 1.92 × 10.sup.−3 2.07 × 10.sup.−3 1.98 × 10.sup.−3 1.79 × 10.sup.−3 1.64 × 10.sup.−3 1.52 × 10.sup.−3 Example 3 Present 1.86 × 10.sup.−3 1.96 × 10.sup.−3 1.90 × 10.sup.−3 1.76 × 10.sup.−3 1.60 × 10.sup.−3 1.50 × 10.sup.−3 Example 4 Present 2.66 × 10.sup.−3 2.83 × 10.sup.−3 2.62 × 10.sup.−3 2.45 × 10.sup.−3 2.24 × 10.sup.−3 2.00 × 10.sup.−3 Example 5 Present 2.32 × 10.sup.−3 2.26 × 10.sup.−3 2.19 × 10.sup.−3 2.06 × 10.sup.−3 1.77 × 10.sup.−3 1.57 × 10.sup.−3 Example 6 Present 2.08 × 10.sup.−3 2.18 × 10.sup.−3 1.96 × 10.sup.−3 1.98 × 10.sup.−3 1.75 × 10.sup.−3 1.59 × 10.sup.−3 Example 7 Present 2.54 × 10.sup.−3 2.52 × 10.sup.−3 2.43 × 10.sup.−3 2.22 × 10.sup.−3 2.03 × 10.sup.−3 1.91 × 10.sup.−3 Example 8 Present 1.96 × 10.sup.−3 2.16 × 10.sup.−3 2.31 × 10.sup.−3 2.10 × 10.sup.−3 1.91 × 10.sup.−3 1.70 × 10.sup.−3 Example 9 Present 1.77 × 10.sup.−3 1.83 × 10.sup.−3 1.70 × 10.sup.−3 1.66 × 10.sup.−3 1.65 × 10.sup.−3 1.69 × 10.sup.−3 Example 10 Comparative 1.87 × 10.sup.−8 — — — 1.27 × 10.sup.−7 1.37 × 10.sup.−9 Example

(78) TABLE-US-00005 TABLE 5 Thermal conductivity κ (W/(m .Math. K)) 100° C. 200° C. 300° C. 400° C. 500° C. 550° C. Present 8.24 6.29 4.96 4.29 4.13 4.02 Example 1 Present 8.90 6.85 5.45 4.90 4.72 4.55 Example 2 Present 8.71 6.93 5.60 5.07 4.89 4.65 Example 3 Present 9.38 7.46 5.87 5.25 4.97 4.76 Example 4 Present 8.33 6.55 5.00 4.43 4.19 4.00 Example 5 Present 8.37 6.63 5.21 4.57 4.30 4.07 Example 6 Present 8.45 6.50 5.18 4.43 4.27 4.20 Example 7 Present 9.06 7.06 5.59 5.00 4.81 4.68 Example 8 Present 8.53 6.63 5.27 4.76 4.58 4.39 Example 9 Present 9.51 7.35 6.37 5.92 5.76 5.43 Example 10 Comparative 8.98 7.01 5.67 5.05 4.88 4.84 Example

(79) TABLE-US-00006 TABLE 6 Dimensionless figure of merit ZT 100° C. 200° C. 300° C. 400° C. 500° C. 550° C. Present 0.110 0.190 0.280 0.350 0.380 0.390 Example 1 Present 0.070 0.130 0.180 0.220 0.240 0.260 Example 2 Present 0.080 0.140 0.200 0.240 0.260 0.270 Example 3 Present 0.080 0.130 0.190 0.230 0.260 0.260 Example 4 Present 0.120 0.200 0.300 0.370 0.410 0.410 Example 5 Present 0.100 0.160 0.240 0.300 0.320 0.320 Example 6 Present 0.090 0.160 0.220 0.300 0.320 0.310 Example 7 Present 0.100 0.170 0.250 0.300 0.330 0.340 Example 8 Present 0.090 0.150 0.250 0.300 0.320 0.260 Example 9 Present 0.070 0.120 0.150 0.190 0.220 0.260 Example 10 Comparative 0.041 0.060 0.075 0.074 0.062 0.059 Example

(80) In the comparative example in which no silicon oxide was added, no dopant element was contained, and the electric resistance value R was very high. In addition, it is confirmed that the value of the Seebeck coefficient S is relatively unstable, the power factor (PF) is low, the dimensionless figure of merit ZT is also low, and the thermoelectric property is inferior.

(81) In the present examples to which a silicon oxide was added, the electric resistance value R was sufficiently low even without containing a dopant element. In addition, it is confirmed that the Seebeck coefficient S is stable, the power factor (PF) is also sufficiently high, the dimensionless figure of merit ZT is sufficiently high, and the thermoelectric property is excellent.

(82) From the above, it was confirmed that, according to the present examples, it is possible to provide a thermoelectric conversion material that can suppress an electric resistance value to be low without adding a dopant element complicated to handle and is excellent in a thermoelectric property.