Display device using two-dimensional phase transition material and method for manufacturing same

Abstract

The present invention relates to a display device using a two-dimensional phase transition material including: a substrate; a metal layer formed on the substrate; an insulation layer formed on the metal layer; a transparent electrode layer formed on the insulation layer; a light absorption layer formed on the transparent electrode layer and formed of a phase transition material; and a passivation layer formed on the light absorption layer, wherein the light absorption layer undergoes reversible phase transition depending on any of temperature, magnetic field and electric field.

Claims

1. A display device using a two-dimensional phase transition material, comprising: a substrate; a metal layer formed on the substrate; an insulation layer formed on the metal layer; a transparent electrode layer formed on the insulation layer; a light absorption layer formed on the transparent electrode layer and consisting of a phase transition material; and a passivation layer formed on the light absorption layer, wherein the light absorption layer undergoes reversible phase transition depending on any of temperature, magnetic field and electric field, and the light absorption layer is formed of molybdenum ditelluride.

2. The display device using a two-dimensional phase transition material of claim 1, wherein the passivation layer is formed of aluminum oxide and the light absorption layer undergoes phase transition from 2H to 1T′ when heat is applied to the display device.

3. The display device using a two-dimensional phase transition material of claim 1, wherein the passivation layer is formed of indium tin oxide (ITO) and the light absorption layer undergoes phase transition from 2H to 1T′ when a voltage is applied between the metal layer and the passivation layer as the passivation layer transfers charge to the light absorption layer.

4. A method for manufacturing a display device using a two-dimensional phase transition material, comprising: a step of forming a metal layer on a substrate; a step of forming an insulation layer on the metal layer; a step of forming a transparent electrode layer on the insulation layer; a step of forming a light absorption layer consisting of a phase transition material on the transparent electrode layer; and a step of forming a passivation layer on the light absorption layer, wherein the light absorption layer undergoes reversible phase transition depending on any of temperature, magnetic field and electric field, and the light absorption layer is formed of molybdenum ditelluride.

5. The method for manufacturing a display device using a two-dimensional phase transition material of claim 4, wherein, in the step of forming the metal layer, silver is deposited on a silicon substrate to a thickness of 50 nm by electron-beam evaporation.

6. The method for manufacturing a display device using a two-dimensional phase transition material of claim 4, wherein, in the step of forming the insulation layer, silicon dioxide is deposited on the metal layer to a thickness of 20 nm by plasma-enhanced chemical vapor deposition.

7. The method for manufacturing a display device using a two-dimensional phase transition material of claim 4, wherein, in the step of forming the transparent electrode layer, the transparent electrode layer is formed by wet transfer of single-layer graphene grown by chemical vapor deposition on the insulation layer to a thickness of 0.34 nm.

8. The method for manufacturing a display device using a two-dimensional phase transition material of claim 4, wherein, in the step of forming the light absorption layer, the light absorption layer is formed by mechanical exfoliation of 2H phase molybdenum ditelluride on the transparent electrode layer to a thickness of 5 nm.

9. The method for manufacturing a display device using a two-dimensional phase transition material of claim 4, wherein, in the step of forming the passivation layer, indium tin oxide is deposited on the light absorption layer to a thickness of 10 nm by using a sputtering system.

10. The method for manufacturing a display device using a two-dimensional phase transition material of claim 4, wherein, in the step of forming the passivation layer, aluminum oxide is deposited on the light absorption layer to a thickness of 20 nm by atomic layer deposition.

11. A display device using a two-dimensional phase transition material, comprising: a substrate; a metal layer formed on the substrate; an insulation layer formed on the metal layer; a transparent electrode layer formed on the insulation layer; a light absorption layer formed on the transparent electrode layer and consisting of a phase transition material; and a passivation layer formed on the light absorption layer, wherein the light absorption layer is formed of molybdenum ditelluride.

12. The display device using a two-dimensional phase transition material of claim 11, wherein the passivation layer is formed of aluminum oxide and the light absorption layer undergoes phase transition from 2H to 1T′ when heat is applied to the display device.

13. The display device using a two-dimensional phase transition material of claim 11, wherein the passivation layer is formed of indium tin oxide (ITO) and the light absorption layer undergoes phase transition from 2H to 1T′ when a voltage is applied between the metal layer and the passivation layer as the passivation layer transfers charge to the light absorption layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 illustrates the phase transition of molybdenum ditelluride.

(2) FIG. 2 schematically shows a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure.

(3) FIGS. 3A-3F are cross-sectional views for illustrating the steps of a method for manufacturing a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure.

(4) FIG. 4 shows the light absorbance and reflectance of a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure depending on wavelength.

(5) FIG. 5 shows exemplary phase transition of a display device using a two-dimensional phase transition material manufactured according to an exemplary embodiment of the present disclosure depending on temperature.

(6) FIG. 6 schematically shows a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure.

(7) FIGS. 7A-7F are cross-sectional views for illustrating the steps of a method for manufacturing a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure.

(8) FIG. 8 shows the light reflectance of a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure depending on voltage.

BEST MODE FOR CARRYING OUT THE INVENTION

(9) Hereinafter, specific exemplary embodiments are described in detail so that those having ordinary skill in the art to which the present disclosure belongs can easily carry out the present disclosure referring to the attached drawings. When describing the specific exemplary embodiment of the present disclosure, detailed description of known function or constitution will be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure.

(10) The exemplary embodiments are provided as examples for fully conveying the idea of the present disclosure to those skilled in the art. Accordingly, the present disclosure is not limited by the exemplary embodiments and may be embodied into other forms. In the drawings, the width, length, thickness, etc. of the components may be exaggerated for the sake of convenience. Throughout the specification, like numerals denote like elements.

(11) The present disclosure provides an electrically variable display device using molybdenum ditelluride, which is a two-dimensional phase transition material, and a method for manufacturing the same. Molybdenum ditelluride undergoes reversible phase transition depending on external conditions, i.e., any of temperature, magnetic field and electric field, and an electrically variable display device can be embodied by utilizing this property.

(12) FIG. 2 schematically shows a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure.

(13) As shown in FIG. 2, a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure may be configured by including a metal layer (Ag) formed on a substrate (not shown), an insulation layer (SiO.sub.2) formed on the metal layer (Ag), a transparent electrode layer (graphene) formed on the insulation layer (SiO.sub.2), a light absorption layer (MoTe.sub.2) formed on the transparent electrode layer (graphene), and a passivation layer (Al.sub.2O.sub.3) formed on the light absorption layer (MoTe.sub.2).

(14) The light absorption layer may be formed of molybdenum ditelluride (MoTe.sub.2), which is a two-dimensional phase transition material. The light absorption layer of the display device undergoes reversible phase change (i.e., 2H MoTe.sub.2 .Math.1T′ MoTe.sub.2) depending on the temperature of the substrate. This allows light modulation since optical properties are changed due to the phase transition.

(15) The structure of the display device and a method for manufacturing the same are described more specifically referring to FIGS. 3A-3F.

(16) FIGS. 3A-3F are cross-sectional views for illustrating the steps of a method for manufacturing a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure.

(17) First, as shown in FIG. 3A, a metal layer 120 may be formed on a substrate 110. For example, the substrate 110 may be formed as a silicon substrate, and the metal layer 120 may be formed by depositing silver (Ag) to a thickness of 50 nm by electron-beam (e-beam) evaporation. The metal layer 120 may serve to reflect incident light wave to a back reflector.

(18) Then, as shown in FIG. 3B, an insulation layer 130 may be formed on the metal layer 120. For example, the insulation layer 130 may be formed by depositing silicon dioxide (SiO.sub.2) to a thickness of 20 nm by plasma-enhanced chemical vapor deposition (PECVD). The insulation layer 130 may serve as a spacer and may amplify the absorption of incident light wave.

(19) Then, as shown in FIG. 3C, a transparent electrode layer 140 may be formed on the insulation layer 130. For example, the transparent electrode layer 140 may be formed by wet transfer of single-layer graphene grown by chemical vapor deposition (CVD) to a thickness of 0.34 nm. Graphene is transparent in the visible region and may be used as a channel material of a phototransistor.

(20) Then, as shown in FIG. 3D, a light absorption layer 150 may be formed on the transparent electrode layer 140. For example, the light absorption layer 150 may be formed by mechanical exfoliation of 2H phase molybdenum ditelluride (MoTe.sub.2) in bulk and pick-up transfer to a thickness of 5 nm.

(21) Then, as shown in FIG. 3E, a passivation layer 160 may be formed on the light absorption layer 150. For example, the passivation layer 160 may be formed by depositing aluminum oxide (Al.sub.2O.sub.3) to a thickness of 20 nm by atomic layer deposition (ALD). The passivation layer 160 may serve to prevent oxidation of the light absorption layer 150.

(22) A display device 100 manufactured by the process described referring to FIGS. 3A-3E may have a structure optimized for increased absorbance of the light absorption layer 150. In addition, when heat is added to the display device 100, the light absorption layer 150′ undergoes phase transition of molybdenum ditelluride (MoTe.sub.2) to 1T′ phase as shown in FIG. 3F. The phase transition is a reversible process.

(23) Although the materials, thicknesses and formation methods of the layers constituting the display device were described in detail in the foregoing embodiments, it is apparent that the present disclosure is not necessarily limited thereto and various materials, thicknesses and formation methods known to those of ordinary skill can be applied.

(24) FIG. 4 shows the light absorbance and reflectance of a display device using a two-dimensional phase transition material according to an exemplary embodiment of the present disclosure depending on wavelength. FIG. 4 shows (a) absorbance depending on wavelength, and (b) reflectance depending on wavelength.

(25) Referring to FIG. 4, it can be seen that the absorbance of the light absorption layer formed of molybdenum ditelluride (MoTe.sub.2) is changed (by approximately 25%) due to phase transition. Through this, a black and white display device of complete absorption (i.e., black) and complete reflection (i.e., white) can be embodied.

(26) FIG. 5 shows exemplary phase transition of a display device using a two-dimensional phase transition material manufactured according to an exemplary embodiment of the present disclosure depending on temperature.

(27) Referring to FIG. 5, it can be seen that the light absorption layer formed of molybdenum ditelluride (MoTe.sub.2) undergoes phase transition from 2H phase to 1T′ phase as the temperature of the substrate is changed from 300 K to 400 K, 500 K and 700 K, resulting in change in color.

(28) FIG. 6 schematically shows a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure.

(29) As shown in FIG. 6, a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure may be configured by including metal layer (Ag) formed on a substrate (silicon substrate), an insulation layer (SiO.sub.2) formed on the metal layer (Ag), a transparent electrode layer (graphene) formed on the insulation layer (SiO.sub.2), a light absorption layer (MoTe.sub.2) formed on the transparent electrode layer (graphene), and a passivation layer (ITO) formed on the light absorption layer (MoTe.sub.2).

(30) The light absorption layer may be formed of molybdenum ditelluride (MoTe.sub.2), which is a two-dimensional phase transition material. The light absorption layer of the display device undergoes reversible phase change (i.e., 2H MoTe.sub.2 .Math.1T′ MoTe.sub.2) as a voltage is applied between the metal layer (Ag) and the passivation layer (ITO). This allows electrical light modulation since optical properties are changed due to the phase transition. More specifically, when a voltage is applied between the metal layer and the passivation layer, the charge of the passivation layer (ITO) is transported to the light absorption layer (MoTe.sub.2), and the transported charge fills the vacant energy of the light absorption layer (MoTe.sub.2) in the 2H phase, leading to transition to the 1T′ phase.

(31) The structure and manufacturing method of this display device are described in more detail referring to FIGS. 7A-7F.

(32) FIGS. 7A-7F are cross-sectional views for illustrating the steps of a method for manufacturing a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure.

(33) First, as shown in FIG. 7A, a metal layer 220 may be formed on a substrate 210. For example, the substrate 210 may be formed as a silicon substrate, and the metal layer 220 may be formed by depositing silver (Ag) to a thickness of 50 nm by electron-beam (e-beam) evaporation. The metal layer 220 may serve to reflect incident light wave to a back reflector and an electrode, and may serve to transport the charge of a passivation layer 260 to a light absorption layer 250.

(34) Then, as shown in FIG. 7b, an insulation layer 230 may be formed on the metal layer 220. For example, the insulation layer 230 may be formed by depositing silicon dioxide (SiO.sub.2) to a thickness of 20 nm by plasma-enhanced chemical vapor deposition (PECVD). The insulation layer 230 may serve as a spacer and may amplify the absorption of incident light wave.

(35) Then, as shown in FIG. 7C, a transparent electrode layer 240 may be formed on the insulation layer 230. For example, the transparent electrode layer 240 may be formed by wet transfer of single-layer graphene grown by chemical vapor deposition (CVD) to a thickness of 0.34 nm. Graphene is transparent in the visible region and may be used as a channel material of a phototransistor.

(36) Then, as shown in FIG. 7D, a light absorption layer 250 may be formed on the transparent electrode layer 240. For example, the light absorption layer 250 may be formed by mechanical exfoliation of 2H phase molybdenum ditelluride (MoTe.sub.2) in bulk and pick-up transfer to a thickness of 5 nm.

(37) Then, as shown in FIG. 7E, a passivation layer 260 may be formed on the light absorption layer 250. For example, the passivation layer 260 may be formed by depositing indium tin oxide (ITO) to a thickness of 10 nm by using a sputtering system. The passivation layer 260 may serve to prevent oxidation of the light absorption layer 250 and may also serve as a transparent electrode in the visible region.

(38) A display device 200 manufactured by the process described referring to FIGS. 7A-7E may have a structure optimized for increased absorbance of the light absorption layer 250. In addition, when a voltage is added between the metal layer 220 and the passivation layer 260 of the display device 200, the light absorption layer 250′ undergoes phase transition of molybdenum ditelluride (MoTe.sub.2) to 1T′ phase as shown in FIG. 7F. The phase transition is a reversible process.

(39) Although the materials, thicknesses and formation methods of the layers constituting the display device were described in detail in the foregoing embodiments, it is apparent that the present disclosure is not necessarily limited thereto and various materials, thicknesses and formation methods known to those of ordinary skill can be applied.

(40) FIG. 8 shows the light reflectance of a display device using a two-dimensional phase transition material according to another exemplary embodiment of the present disclosure depending on voltage.

(41) Referring to FIG. 8, it can be seen that phase transition is induced as a voltage is applied between the metal layer and the passivation layer of the display device and the reflectance is changed (by approximately 38%) as a result. That is to say, it can be seen that a black and white display device of complete absorption (i.e., black) and complete reflection (i.e., white), which can be operated electrically and is capable of reversible phase transition, can be embodied.

(42) In addition, the operation voltage range of the display device is from −3V to 4V and light modulation is possible with low power.

(43) In addition, it can be seen that a hysteresis curve is observed as the applied voltage is increased and decreased.

(44) The present disclosure is not limited by the above-described exemplary embodiments and the attached drawings. It will be apparent to those of ordinary skill in the art to which the present disclosure belongs that substitutions, changes and modifications can be made to the constitutional elements of the present disclosure without departing from the technical idea of the present disclosure.