Structured optical fibre sensor integrating a tunable vernier effect laser emission device
11402240 · 2022-08-02
Assignee
Inventors
Cpc classification
H01S5/10
ELECTRICITY
G01D5/35322
PHYSICS
H01S5/06821
ELECTRICITY
H01S5/1032
ELECTRICITY
G01D5/35329
PHYSICS
G01D5/35335
PHYSICS
International classification
H01S5/10
ELECTRICITY
H01S5/30
ELECTRICITY
H01S5/12
ELECTRICITY
Abstract
The invention is concerned with a structured optical fibre sensor, comprising a light source (1), a detection system (2) and a Bragg grating optical fibre (3) connected to said source and said system. The light source is a wavelength-tunable laser emission device (1) comprising a cavity (CA) delimited by a first and a second Sagnac mirror (M1, M2). The cavity comprises an amplifying medium (AM) and a tunable spectral filter using the Vernier effect (F), said filter (F) comprising at least three resonant rings (R.sub.1, R.sub.2, R.sub.N−1, R.sub.N) arranged in cascade, each resonant ring integrating a wavelength-tunable reflectivity loop mirror (MBR).
Claims
1. A structured optical fibre sensor, comprising a light source, a detection system and a Bragg grating optical fibre connected to said source and said detection system, wherein the light source is a wavelength tunable laser emission device which comprises: a first and a second Sagnac mirror; a cavity delimited by the first and second Sagnac mirror, the cavity comprising an amplifying medium and a tunable spectral filter using the Vernier effect, said filter comprising at least three resonant rings arranged in cascade, each resonant ring incorporating a wavelength-tunable reflectivity loop mirror.
2. The structured optical fibre sensor according to claim 1, wherein each resonant ring of said filter comprises a Mach-Zehnder interferometric section.
3. The structured optical fibre sensor according to claim 1, wherein each of the first and second Sagnac mirrors is comprised of an adiabatic directional coupler looped back through a waveguide.
4. The structured optical fibre sensor according to claim 1, wherein the cavity further comprises a phase shift section.
5. The structured optical fibre sensor according to claim 1, wherein one of the first and second Sagnac mirrors is partially reflective.
6. The structured optical fibre sensor according to claim 5, further comprising, outside the cavity on the side of that of the first and second Sagnac mirrors which is partially reflective, a tilted grating coupler to/from a single-mode optical fibre.
7. The structured optical fibre sensor according to claim 1, wherein the amplifying medium comprises an III-V heterostructure.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) Further aspects, purposes, advantages and characteristics of the invention will become clearer upon reading the following detailed description of preferred embodiments of the invention, given by way of non-limiting example and with reference to the appended drawings in which:
(2)
(3)
(4)
(5)
(6)
(7)
DETAILED DISCLOSURE OF PARTICULAR EMBODIMENTS
(8) With reference to
(9) The light source is a wavelength tunable laser emission device 1 which comprises: a first and a second Sagnac mirror M1, M2; a cavity Ca delimited by the first and second Sagnac mirror M1, M2, the cavity comprising an amplifying medium AM and a tunable spectral filter using the Vernier effect F.
(10) In a favoured embodiment of the invention, the amplifying medium comprises an III-V heterostructure. By III-V type heterostructure, it is meant the use of binary, ternary, quaternary materials, which may be chosen from the following non-exhaustive list: InP, GaAs, InGaAlAs, InGaAsP, AlGaAs, InAsP, IInAs. The heterostructure of such an amplifying medium, also called a gain medium, may include a stack of various layers, such as a stack of layers forming quantum wells sandwiched between a first doped, preferably N-doped, layer, and a second doped, preferably P-doped, layer.
(11) This favoured mode is thus based on the technology of heterogeneous integration of III-V materials with silicon, which makes it possible to make photonic circuits associating III-V optical sources with silicon-based components. Heterogeneous III-V integration on silicon can especially consist in bonding a portion of active III-V material capable of emitting light onto a “passive” circuit etched on the surface of a silicon-on-insulator (SOI) substrate. A photonic circuit with a hybrid III-V active section on silicon thus generally comprises:
(12) an SOI substrate carrying a silicon waveguide,
(13) a gain structure which includes at least one optical amplifying medium with a III-V heterostructure, transferred by bonding to the SOI substrate,
(14) a thin oxide layer which serves as a bonding layer and separates the gain structure from the silicon waveguide.
(15) The III-V heterostructure is arranged to overlie a section of the silicon waveguide to form a hybrid waveguide section with the silicon waveguide. At this hybrid waveguide section, the vertical proximity of the III-V and silicon waveguides results in the occurrence of a coupled optical mode resulting from hybridisation between the fundamental eigen modes of each of these guides. This coupled mode is transferred from the active III-V/Silicon hybrid active section to passive pure silicon light propagation sections arranged on either side of the hybrid waveguide section. For this purpose, the silicon waveguide is structured to provide a modal transition section (taper) between the hybrid active section and the propagation sections.
(16) The propagation sections and the hybrid section are delimited by the Sagnac mirrors M1, M2, which thus form an optical feedback structure capable of forming a resonant cavity CA for the amplifying medium AM. One of the mirrors, here M1, is a high reflectivity mirror which for example has a reflectivity of more than 90%, while the other mirror, here M2, is a low reflectivity mirror (partially reflecting mirror) which for example has a reflectivity of less than 50%, typically between 35 and 10%. The low-reflectivity mirror thus forms the optical output of the laser emitting device 1. This optical output is equipped with a grating coupler CI to/from a single-mode optical fibre 4. This grating coupler is preferably a tilted grating which has the advantage of reduced reflectivity. The principle of such a tilted grating is for example described in the publication by Yanlu Li et al, “Tilted silicon-on-insulator grating coupler with improved fibre coupling efficiency and low back reflection based on a silicon overlay”, IEEE Photonics Technology Letters, vol. 25, no. 13, pp. 1195-1198, July 2013.
(17) The single-mode optical fibre 4 is coupled to the Bragg grating fibre 3 via an isolator 5 for limiting parasitic reflections and a coupler 6 to which the detection system 2 is also connected. Thus, the laser emitting device sends the light it generates into the Bragg grating fibre 3, and the detector system 2 detects light modified in response to temperature changes or deformations and provides electrical signals for determining these temperature changes or deformations.
(18) As compared with a diffraction-based DBR mirror, a Sagnac mirror is comprised of a directional coupler looped back through a waveguide and operates solely by constructive/destructive interference between two guides, which simplifies manufacturing thereof since there is no sub-wavelength grating to be made. The advantageous Sagnac loop concept has been widely used in the field of optical fibres, field in which where silica guides show very low chromatic dispersion, so that Sagnac fibre loops are considered achromatic. However, this property is no longer valid in integrated optics because when a directional coupler based on silicon microguides is used, the coupling rate is wavelength-dependent. Nevertheless, in a favoured embodiment of the invention, each of the first and second Sagnac M1, M2 mirrors utilises an adiabatic directional coupler. The adiabatic directional coupler has near-perfect relative coupling ratios over 100 nm of bandwidth, typically relative coupling ratios of between 0.45 and 0.55 over the entire bandwidth, for example over a band between 1260 nm and 1360 nm. An example of the development of such an adiabatic coupler is, for example, given in the publication by Karim Hassan et al, “Robust silicon-on-insulator adiabatic splitter optimized by metamodeling”, Applied Optics 56(8) 2017.
(19) In addition to the amplifying medium MA, the cavity CA may include a phase P control section capable of tuning the modes of the Fabry-Pérot cavity CA by being thermally controlled by means of a heater located above the section P.
(20) The cavity CA additionally includes a tunable spectral filter using the Vernier effect F. This filter is a multi-ring resonator which comprises several resonant rings arranged in cascade. As represented in
(21) The addition to each resonant ring of the adjustable reflectivity mirror significantly increases the effective length of each resonator. As seen previously, this increase reduces the free spectral range, which is not desirable to achieve high tunability. Anyway, in order to take advantage of this type of low-reflectivity resonator while at the same time benefiting from a Vernier effect offering broad tunability, the filter of the sensor emission device according to the invention is not ensured by two rings as is the case in the state of the art, but by a larger number of rings, that is at least three resonant rings R1, R2, R.sub.N−1, R.sub.N as represented in
(22) One advantage of such a number of rings is that the overall FSR of the ring systems is no longer restrictive: two resonances can coincide, if the third or fourth resonance does not coincide, there will be no overall resonance of the system. This means that, unlike the case with two rings, the order difference between the resonators can be greater than 1. So there is no need to choose the lowest possible ΔFSR since the tunability is no longer limited by
(23)
Thus, both high tunability and good SMSR can be achieved.
(24) An example of dimensioning the at least three rings of the filter is given below in connection with an example of an embodiment where the filter comprises five rings.
(25) A reference ring with a free spectral range FSR0 is considered. The other rings of the filter have an FSR expressed as FSR.sub.i=α.sub.iFSR.sub.0. The free spectral range of the 2-ring subsystems 0 and i is given by
(26)
while the free spectral range of the N-ring system is given by
(27)
(28) For example, if four rings are considered such that FSR.sub.1=0.9*FSR.sub.0, FSR.sub.2=0.8*FSR.sub.0 and FSR.sub.3=0.7*FSR.sub.0, the overall free spectral range of the system is 0.9*0.8*0.7/(0.1*0.2*0.3)=84*FSR.sub.0, or 126 nm if a typical FSR.sub.0 of 1.5 nm is taken. It is therefore noticed that the free spectral range of an N-ring system increases with the number of rings, making a wider range of tunability available.
(29) Let a waveguide with an effective index be n.sub.eff and a minimum resonant ring perimeter be L.sub.0. The lowest wavelength to be reached in the system is chosen: λ.sub.0=1.26 μm. The resonance order of the ring 0 is expressed as
(30)
and its free spectral range is
(31)
(32) A tunability range is then chosen, for example Δλ=100 nm, and λ.sub.m=λ.sub.0+Δλ is written. The resonance order shift for ring 0 to reach the maximum wavelength is expressed according to
(33)
and the free spectral range of ring 0 at λ.sub.m according to
(34)
(35) The selection of the other rings in terms of the difference in free spectral range from the reference ring 0 (typically taking ΔFSR>FWHM) is as follows. The ring i should have a free spectral interval FSR.sub.i by imposing its resonance with the condition λ.sub.i=λ.sub.0. Hence
(36)
This choice ensures a coincidence at λ.sub.0 but is not restrictive on the geometry of the other rings.
(37) Since the filter should be tunable in the range Δλ, a resonance of the ring system is searched for at λ.sub.s such that λ.sub.0<λ.sub.s<λ.sub.m. For this, for each ring N.sub.i,s=
(38)
is determined, that is the resonance order which is closest to λ.sub.s at
(39)
The FSR of each ring is then calculated at λ.sub.s, FSR.sub.i,s. For a given λ.sub.s, and as represented by the window FS in
(40) The rings are then attempted to be tuned to coincide at λ.sub.s. The phase shift to be applied to each ring is written as Δϕ.sub.i=2π(λ.sub.s−λ.sub.i,s)/FSR.sub.i,s. This phase shift can be applied by means of a heater placed above each ring. The individual resonances of the rings at λ.sub.0+100 nm, have been represented in
(41) In addition, the transmission spectrum T of the 5-ring filter has been represented in
(42) Ultimately, the laser emission device can consist of a low-reflection grating coupler, Sagnac loop mirrors with improved bandwidth through the use of wide-band adiabatic directional couplers, and in the core of the tuning mechanism, a series of resonant rings with low reflectivity. The use of at least three rings makes them compatible with the achievement of a Vernier effect offering wide tunability.
(43) In addition to its wide tuning range, the laser emission device has enhanced accuracy of the emitted wavelength. Since the management of the emitted wavelength is based on the coincidence of resonances, it proves to be possible to refine this emitted wavelength by simultaneously adjusting the N rings.
(44) Finally, the laser emission device has the advantage of being integrated onto a semiconductor chip. Its compactness and the absence of any mechanical parts thus allow low-cost industrialisation of the optical fibre sensor with high efficiencies of microelectronic technologies.