POWER MODULE FOR THE OPERATION OF AN ELECTRIC VEHICLE DRIVE WITH IMPROVED TEMPERATURE DETERMINATION OF THE POWER SEMICONDUCTOR

Abstract

Method for measuring an operating temperature of a power module (10) that is used for operating an electric vehicle drive, the power module (10) comprising a plurality of semiconductor switching elements (14) and drive electronics (16), wherein the semiconductor switching elements (14) can be switched by the drive electronics (16) in such a way that the semiconductor switching elements (14) allow or interrupt a drain-source current in order to convert the direct current fed into the power module (10) at the input side into an output-side alternating current, wherein the method comprises measurement of a voltage present at a point located on a side of a diode (22) that is connected in series with the semiconductor switching element (14) and that faces away from the semiconductor switching element (14), wherein the method comprises measurement of a drain-source current of the semiconductor switching element (14) that is generated by a current source (18), wherein the method comprises determination of a mathematical dependency between the measured voltage and the measured current.

Claims

1. Method for measuring an operating temperature of a power module (10) that is used for operating an electric vehicle drive, the power module (10) comprising a plurality of semiconductor switching elements (14) and drive electronics (16), wherein the semiconductor switching elements (14) can be switched by the drive electronics (16) in such a way that the semiconductor switching elements (14) allow or interrupt a load current in order to convert the direct current fed into the power module (10) at the input side into an output-side alternating current, wherein the method comprises measurement of a voltage present at a point located on a side of a diode (22) that is connected in series with the semiconductor switching element (14) and that faces away from the semiconductor switching element (14), wherein the method comprises measurement of a drain-source current of the semiconductor switching element (14) that is generated by a current source (18), wherein the method comprises determination of a mathematical dependency between the measured voltage and the measured current.

2. Method according to claim 1, wherein the mathematical dependency describes the measured voltage as a function of the measured current.

3. Method according to claim 2, wherein the method further comprises the determination of a derivative of the function with respect to the measured current.

4. Method according to claim 3, wherein the method further comprises ascertaining an operating temperature of the semiconductor switching element (14) belonging to the value of the derivative on the basis of a predetermined correlation between a resistance of the semiconductor switching element (14) and its operating temperature.

5. Method according to one of claims 1 to 4, wherein the measurement of the load current takes place by means of a current measuring device (20) which serves simultaneously for measuring a phase current of the alternating current.

6. Method according to one of claims 1 to 5, wherein the method further comprises determination of a voltage offset of the measured voltage for the case in which the measured current is equal to zero, wherein the mathematical dependency between the measured voltage corrected by the voltage offset and the measured current is determined.

7. Method according to one of claims 1 to 6, wherein the method comprises measurement of a first voltage and/or of a second voltage, wherein the first voltage is present at a first point (P1) that is located on a side of the diode (22) that faces away from a semiconductor switching element (14), wherein the second voltage is present at a second point (P2) that is located on a side of the diode (22) that faces away from a semiconductor switching element (14), wherein the second point (P2) is located on a side of the first point (P1) that faces away from the diode (22).

8. Method according to claim 7, wherein a filter circuit is arranged between the first point (P1) and the second point (P2).

9. Method according to one of claim 7 or 8, wherein the method comprises determination of the mathematical dependency between the measured current on the one hand and on the other hand the first voltage, or the second voltage, or a further voltage resulting computationally from the first voltage and the second voltage.

10. Power module (10) for operating an electric vehicle drive, comprising a plurality of semiconductor switching elements (14) and drive electronics (16), wherein the semiconductor switching elements (14) can be switched by the drive electronics (16) in such a way that the semiconductor switching elements (14) allow or interrupt a load current, in order to convert an input-side direct current fed to the power module (10) into an output-side alternating current, wherein the power module (10) comprises a temperature measurement device that is designed to carry out the method according to one of claims 1 to 9.

11. Inverter comprising a power module (10) according to claim 10.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Embodiments are now described by way of example, and with reference to the appended drawings, in which:

[0021] FIG. 1 shows a schematic illustration of a power module according to one embodiment; and

[0022] FIG. 2 shows a schematic illustration of a method for measuring the operating temperature of the power module.

[0023] Identical reference signs in the figures indicate referenced components that are identical or functionally similar.

DETAILED DESCRIPTION

[0024] FIG. 1 shows a schematic illustration of a power module according to the invention 10. The power module 10 comprises a plurality of semiconductor switching elements 14 (wherein, for reasons of clarity, only a single semiconductor switching element 14 is shown in FIG. 1) and drive electronics 16. The semiconductor switching elements 14 can be switched by means of the drive electronics 16 in such a way that the semiconductor switching elements 14 allow or interrupt a drain-source current in order to convert an input-side direct current fed to the power module 10 into an output-side alternating current. The semiconductor switching elements 14 form one or a plurality of half-bridges, each of which comprises a high side and a low side. The high side and the low side each comprise one or a plurality of semiconductor switching elements that are connected in parallel. Through controlled drive of the semiconductor switching elements 14, three phase currents, differing from one another in phase, can be generated on the basis of the input-side direct current.

[0025] In order to determine the temperature of one of the semiconductor switching elements 14, in a step 102 (see the schematic illustration of the measuring method in FIG. 2) according to the invention, a voltage is measured that is present at a point P1, P2 that is located on a side of a diode 22 that faces away from the semiconductor switching element 14 concerned and is connected in series with the semiconductor switching element 14. As shown in FIG. 1, a first point P1 and a second point P2 can be used for this. A first voltage V1 is measured at the first point P1 by means of a first voltage measuring device 30. A second voltage V2 is measured at the second point by means of a second voltage measuring device 28. A filter circuit comprising a series resistor 24 and a capacitor 26 is arranged between the first point P1 and the second point P2. On the semiconductor switching element side, the diode 22 is connected to a drain contact 144 of the semiconductor switching element 14, and is located next to the series resistor 24 in series with the semiconductor switching element 14. The series resistor 24 is connected downstream to the drive electronics 16, to which a gate electrode 142 of the semiconductor switching element 14 is also connected.

[0026] Either the first voltage V1, the second voltage V2, or a third voltage derived computationally from the first voltage V1 and the second voltage V2, can be used as the measured voltage. In a further step 104, a drain-source current of the semiconductor switching element 1, generated by a current source 18 and flowing from the drain contact 144 to a source contact 146 of the semiconductor switching element 14, is additionally measured.

[0027] In a further step 106, a mathematical dependency between the measured voltage and the measured current is ascertained. The measured voltage can, for example, be plotted against the measured current graphically, in order to obtain a characteristic current-voltage curve. The mathematical dependency to be ascertained is preferably a function that describes the measured voltage depending on the measured current. The measurement method can further comprise a step 108 in which the first derivative of the function with respect to the current is calculated. This first derivative corresponds to the gradient of the characteristic current-voltage curve, and has the dimension of an ohmic resistance. Due to the topography of the circuitry, the resistance determined in this way is equal to the internal resistance of the semiconductor switching element 14. With the aid of a previously-stored correlation between the internal resistance of the semiconductor switching element 14 under consideration and its operating temperature, the current operating temperature of the semiconductor switching element 14 can be deduced on the basis of the first derivative or the gradient.

[0028] The diode 22 can be a decoupling diode, for example a Schottky diode, by means of which the applied high voltage is decoupled from the semiconductor switching element 14.

[0029] According to a further embodiment, the measured voltage can be corrected by an offset. The offset corresponds to the voltage value at the intersection between the characteristic current-voltage curve and the voltage axis. The voltage, corrected by this offset, corresponds to the drain-source voltage actually present at the semiconductor switching element 14. The offset is found from the characteristic curve of the diode through which a defined measurement current flows. The offset voltage, which corresponds to the forward voltage of the diode 22, is obtained in this way. The mathematical method can ascertain this offset voltage, and calculate it out.

REFERENCE DESIGNATIONS

[0030] 10 Power module

[0031] 14 Semiconductor switching element

[0032] 16 Drive electronics

[0033] 18 Current source

[0034] 20 Current measuring instrument

[0035] 22 Diode

[0036] 24 Series resistor

[0037] 26 Capacitor

[0038] 30 First voltage measuring device

[0039] 28 Second voltage measuring device

[0040] 32 Ground

[0041] 102-108 Method steps

[0042] P1 First point

[0043] P2 Second point