OPTOELECTRONIC RADIATION DEVICE

Abstract

Optoelectronic radiation device, in particular for generating and emitting health-promoting and regenerative radiation, comprising: at least one or more optoelectronic radiation sources configured to generate infrared radiation, and at least one optoelectronic radiation source for generating white light, wherein the infrared radiation is in an infrared spectral range between 600 nm and 900 nm.

Claims

1. Optoelectronic radiation device, in particular for generating and emitting health-promoting and regenerative radiation, comprising at least one or more optoelectronic radiation sources configured to generate infrared radiation, and at least one optoelectronic radiation source for generating white light, wherein the infrared radiation is in an infrared spectral range between 600 nm and 900 nm, and wherein each radiation source is arranged in an associated, own cavity of a housing of the radiation device, or at least two radiation sources are arranged in the same cavity or on a same substrate.

2. Optoelectronic radiation device according to claim 1, characterized in that the infrared radiation comprises spectral components at at least one and preferably at several or all of the following wavelengths: λ1=670 nm±10 nm or ±30 nm λ2=760 nm±10 nm or ±30 nm λ3=780 nm±10 nm or ±30 nm λ4=830 nm±10 nm or ±30 nm.

3. Optoelectronic radiation device according to claim 1, characterized in that the infrared radiation comprises spectral components at at least one and preferably at several or all of the following wavelengths: λ5=620 nm±10 nm or ±30 nm λ6=675 nm±10 nm or ±30 nm λ7=760 nm±10 nm or ±30 nm λ8=830 nm±10 nm or ±30 nm

4. Optoelectronic radiation device according to claim 2, characterized in that one, several or all of said wavelengths form a local maximum in the infrared emission spectrum of the radiation device.

5. Optoelectronic radiation device according to claim 1, characterized in that the device comprises a separate optoelectronic radiation source for generating infrared radiation at a predetermined wavelength, in particular at at least one, some and preferably at each of said wavelengths.

6. Optoelectronic radiation device according to claim 3, characterized in that one, several or all of said wavelengths form a local maximum in the infrared emission spectrum of the radiation device.

7. Optoelectronic radiation device according to claim 1, characterized in that at least one of the radiation sources, several of the radiation sources or each of the radiation sources is arranged as a separate radiation source, in particular with an own enclosure, on a carrier.

8. Optoelectronic radiation device according to claim 1, characterized in that at least one radiation source is intrinsically configured to generate infrared radiation, in particular at at least one of the wavelengths λ1 to λ4 or λ5 to λ8.

9. Optoelectronic radiation device according to claim 1, characterized in that at least one radiation source is intrinsically configured to generate radiation in a spectral range outside the infrared spectral range, in particular outside the wavelengths λ1 to λ4 or λ5 to λ8, and that at least one converter is provided for at least partially converting the generated radiation into radiation comprising spectral components in the infrared spectral range, in particular at at least one of the wavelengths λ1 to λ4 or λ5 to λ8.

10. Optoelectronic radiation device according to claim 1, characterized in that at least one optoelectronic radiation source is configured both for generating white light and for generating infrared radiation, which comprises spectral components in the infrared spectral range, in particular at at least one of the wavelengths λ1 to λ4 or λ5 to λ8.

11. Optoelectronic radiation device according to claim 10, characterized in that the at least one optoelectronic radiation source comprises a converter which allows conversion of the radiation provided by the radiation source into white light and into infrared light.

12. Optoelectronic radiation device according to claim 1, characterized in that the at least one optoelectronic radiation source for generating white light and the at least one or more of the optoelectronic radiation sources for generating infrared radiation are arranged or arrangeable distant from each other.

13. Optoelectronic radiation device according to claim 1, characterized in that the radiation source for generating white light is arranged in a separate cavity of a housing of the radiation device.

14. Optoelectronic radiation device according to claim 1, characterized in that that the radiation source for generating white light and at least one radiation source for generating infrared radiation are arranged in a common cavity of the housing or on a substrate of the radiation device.

15. Optoelectronic radiation device according to claim 1, characterized in that the device comprises at least one sensor for detecting infrared radiation, in particular at at least one of the wavelengths λ1 to λ8, wherein, preferably, one or more of the emitters of the radiation sources are used as sensor.

16. Optoelectronic radiation device according to claim 15, characterized in that the device comprises a controller which is configured to control at least one radiation source for generating infrared radiation as a function of a signal generated by means of the sensor.

17. Optoelectronic radiation device according to claim 15, characterized in that the sensor is arranged in a cavity of a housing of the radiation device, wherein, preferably, at least one of the optoelectronic radiation sources for generating infrared radiation is arranged in the cavity.

18. Optoelectronic radiation device according to claim 1, characterized in that at least two and preferably all radiation sources for generating infrared radiation are electrically connected in series.

19. Optoelectronic radiation device according to claim 1, characterized in that at least one and preferably all radiation sources for generating infrared radiation are electrically connected in parallel to at least one radiation source for generating white light.

20. Electronic device, such as a cell phone, tablet, computer screen, television, comprising a display, and at least one optoelectronic radiation device according to claim 1, wherein the optoelectronic radiation device is integrated into the display.

21. Electronic device, such as a cell phone, tablet, computer screen, television, comprising. a display, and at least one optoelectronic radiation device according to claim 1, wherein the optoelectronic radiation device is integrated into the housing, in particular such that the user can be irradiated with infrared radiation during use of the device.

22. Electronic device according to claim 21, characterized in that the device comprises a proximity sensor which can be used to generate infrared radiation in at least one of the wavelength ranges mentioned.

23. Motor vehicle with: an interior and at least one optoelectronic radiation device according to claim 1, wherein the radiation device is arranged in the interior.

Description

[0071] The invention is explained below by way of example with reference to the accompanying drawings. They show, schematically in each case,

[0072] FIG. 1a a variant of an optoelectronic radiation device according to the invention,

[0073] FIG. 1b an emission spectrum similar to the radiation device of FIG. 1a,

[0074] FIG. 2a another variant of an optoelectronic radiation device according to the invention,

[0075] FIG. 2b an emission spectrum similar to the radiation device of FIG. 2a,

[0076] FIG. 3a another variant of an optoelectronic radiation device according to the invention,

[0077] FIG. 3b an emission spectrum similar to the radiation device of FIG. 3a,

[0078] FIG. 4 still another variant of an optoelectronic radiation device according to the invention,

[0079] FIG. 5 still another variant of an optoelectronic radiation device according to the invention,

[0080] FIG. 6 yet another variant of an optoelectronic radiation device according to the invention,

[0081] FIG. 7 a cross-sectional view of an optoelectronic radiation source that can be used in a variant of an optoelectronic radiation device according to the invention,

[0082] FIG. 8 a circuit diagram for the electrical connection of optoelectronic radiation sources according to a variant of an optoelectronic radiation device,

[0083] FIG. 9 a workplace scenario using a variant of an optoelectronic radiation device according to the invention,

[0084] FIG. 10 another workplace scenario, and

[0085] FIG. 11 yet another workplace scenario.

[0086] In the following figure description, the wavelengths λ1 to λ4 are referred to. The same applies to the wavelengths λ5 to λ8 or another selection of wavelengths, e.g., from the wavelengths λ1 to λ8. However, in some embodiments, wavelengths other than the wavelengths λ1 to λ4 can also be generated. In particular, the generated infrared radiation can be in the infrared spectral range between 600 nm and 900 nm or 600 nm and 860 nm. The spectrum may be continuous or interrupted.

[0087] The optoelectronic radiation device shown in FIG. 1a comprises five optoelectronic radiation sources 11, 13, 15, 17 and 21 and optionally a sensor 23. The optoelectronic radiation source 11 is configured to generate and emit white light, in particular in the spectral range from 430 nm to 650 nm. For this purpose, the optoelectronic radiation source can comprise an LED which generates blue light which, by means of a suitable conversion material known per se, generates white light, in particular with spectral components in the mentioned wavelength range.

[0088] The optoelectronic radiation source 13 is configured to generate infrared radiation at a wavelength of λ1=670 nm±10 nm. The optoelectronic radiation source 15 is configured to generate infrared radiation at a wavelength of λ2=760 nm±10 nm, the optoelectronic radiation source 17 is configured to generate infrared radiation at a wavelength of λ3=780 nm±10 nm, and the optoelectronic radiation source 21 is configured to generate infrared radiation at a wavelength of λ4=830 nm±10 nm.

[0089] FIG. 1b shows an approximate emission spectrum of the optoelectronic radiation device of FIG. 1a. In addition to visible spectral components, a continuous IR spectrum extends from components still visible to the eye at about 600 nm beyond the 830 nm shown in the scale of FIG. 1b to about 860 nm. The spectrum can also be considered a broad IR spectrum provided by the optoelectronic radiation device in addition to a visible light component in the wavelength range between about 420 nm and 630 nm.

[0090] The intensity of the emitted radiation is plotted against the wavelength. The emission spectrum is also continuous in the infrared spectral region up to above 860 nm, although the wavelengths are plotted only up to 830 nm. Strong changes in intensity over wavelength occur with high intensities at least approximately at wavelengths λ1, λ2, and λ3. Since the wavelength scale ends at 830 nm, a fourth “peak” at about wavelength λ4 is no longer plotted. Due to the continuous spectrum in the infrared spectral range, it is obvious that the radiation sources 13 to 21 can also emit infrared radiation that has other wavelengths than the mentioned wavelengths λ1 to λ4.

[0091] By generating and emitting white light by means of the optoelectronic radiation source 11, the optoelectronic radiation device can be used as an illumination device, for example in a room. In addition to the illumination function, the optoelectronic radiation device also provides a function for increasing well-being and/or health, in particular due to the infrared component in the radiated radiation. In particular, scientific studies have shown that spectral components at, for example, infrared wavelengths λ1, λ2, λ3, and λ4 can contribute to the promotion of health and regeneration of cell structure in the eye.

[0092] The sensor 23 may optionally be provided and configured to detect infrared radiation at at least one of the wavelengths λ1, λ2, λ3, and λ4 (or other wavelength). The sensor may be, for example, an LED that is operated in the blocking direction so that it acts as a sensor or a detector and can detect infrared radiation, particularly at one of the corresponding wavelengths λ1, λ2, λ3, or λ4.

[0093] The infrared radiation emitting radiation sources 13 to 21 may be intrinsically equipped to generate infrared radiation. In particular, each of the radiation sources may be an LED configured to generate infrared radiation at the respective wavelength λ1 to λ4 in its respective active zone. Alternatively, at least one of the infrared radiation sources 13 to 21 may also be configured to generate short-wave radiation, such as blue light, which is converted into infrared radiation via a suitable converter.

[0094] The five radiation sources 11 to 21 and the sensor 23 may be arranged in the optoelectronic radiation device in different ways. For example, each optoelectronic radiation source 21 may be housed in a separate housing or enclosure. It is also conceivable that each of the radiation sources 11 to 21 is arranged in a separate cavity of a housing of the optoelectronic radiation device (not shown). A respective light source 11 to 21 is thereby arranged on the bottom of a cavity. The upper side of the cavity distant from the bottom of the cavity may be closed by means of a window transparent to the electromagnetic radiation generated. The same can apply to the optional sensor 23.

[0095] The optoelectronic radiation device shown in FIG. 2a comprises an optoelectronic radiation source 25 for generating white light, in particular in the spectral range between 430 nm and 650 nm, and an optoelectronic radiation source 27 for generating a broad spectrum in the infrared wavelength range, in particular in the wavelength range between 650 nm and 850 nm. In this case, the infrared radiation comprises spectral components, for example, at the wavelengths λ1 to λ4 already mentioned above.

[0096] The optoelectronic radiation source 25 for generating white light may comprise an LED, in particular a blue light emitting LED chip. Furthermore, the radiation source 25 may comprise a converter material suitable for converting the blue light into white light, in particular with a continuous spectrum between 430 nm and 650 nm.

[0097] The light source 27 may be configured to generate infrared radiation by conversion. For example, the radiation source 27 may comprise an LED or LED chip to generate short wavelength light, such as blue light. Using a converter material known per se from the group of gallium oxides, a broad continuous spectrum in the infrared spectral range with wavelengths between 650 nm and 850 nm, as shown in FIG. 2b, can be generated.

[0098] The radiation source 27 may, alternatively or additionally, comprise so-called quantum dots for generating the infrared radiation. These can be manufactured with respect to the desired emission wavelengths, for example to one of the wavelengths λ1 to λ4. Thus, a spectrum can be generated in the infrared spectral range which, in contrast to the spectrum of FIG. 2b, comprises clearly protruding peaks at the emission wavelengths of the quantum dots.

[0099] The optoelectronic radiation device shown in FIG. 3a comprises an optoelectronic radiation source 29 for generating white light, in particular in the form of a continuous spectrum, with wavelengths between 430 nm and 650 nm.

[0100] In addition, the optoelectronic radiation device of FIG. 3a comprises an optoelectronic radiation source 31 for generating infrared radiation. This optoelectronic radiation source operates with a converter which is configured to convert light from a blue LED or ultraviolet radiation into infrared radiation with a continuous spectrum, for example between 650 nm and 850 nm.

[0101] The optoelectronic radiation source 33 is intrinsically configured to generate infrared radiation, for example at wavelength λ4. The radiation source 33 may be, for example, an LED chip that is intrinsically capable of generating infrared radiation at wavelength λ4. Tuning to other wavelengths, for example λ1, λ2 or λ3, is also possible.

[0102] The use of an optoelectronic radiation source 31 for generating a relatively broad infrared spectrum in combination with a further radiation source 33 for generating infrared radiation at a specific wavelength has the advantage that, for example, the dose of the radiation emitted by the radiation source 33 can be specifically adjusted and controlled. This is possible in particular if the radiation device according to FIG. 3a also uses a sensor as shown by way of example in FIG. 1a. Via the sensor, a detection of the radiation dose of the radiation emitted, for example, by the radiation source 33 is possible. By means of a control system not shown, the radiation source 33 can be controlled in such a way that it emits light depending on the radiation dose detected by means of the sensor.

[0103] The optoelectronic radiation device of FIG. 4 comprises, like the radiation device of FIG. 1a, a radiation source 11 for generating and emitting white light in the spectral range from 430 nm to 650 nm. It also comprises four optoelectronic radiation sources 13 to 21 for generating and emitting infrared radiation. The radiation source 13 is configured to emit infrared radiation at the wavelength λ1. Radiation source 15 is configured to emit infrared radiation at wavelength λ2, radiation source 17 is configured to emit infrared radiation at wavelength λ3, and radiation source 21 is configured to emit infrared radiation at wavelength λ4.

[0104] All radiation sources 11 to 21 are accommodated in a single cavity 35 in the radiation device of FIG. 4. The cavity 35 is formed in a housing 37 of the radiation device. The arrangement of all radiation sources in a single cavity 35 has the advantage that the optoelectronic radiation device can be made particularly compact.

[0105] A substrate can also be used instead of a cavity.

[0106] In contrast to the variant of FIG. 4, in the radiation device of FIG. 5 the optoelectronic radiation source 11 for generating white light is arranged in a separate first cavity 39, while the optoelectronic radiation sources for generating infrared radiation at the wavelengths λ1 to λ4 already mentioned above are accommodated in a further, second cavity 41. The first cavity 39 and the second cavity 41 are again formed in the housing 37 of the optoelectronic radiation device. A “cross-talk” between the radiation source 11 and the radiation sources 13 to 21 can be easily avoided due to the arrangement in different cavities.

[0107] In contrast to the variant of FIG. 5, the optoelectronic radiation device of FIG. 6 lacks the radiation source 15 for generating infrared radiation at the wavelength λ2. Instead, an optoelectronic radiation source not shown is provided, which emits shorter-wavelength light, such as blue light. In addition, a converter 43 is arranged in the cavity 41 to absorb the short wavelength light and convert it into infrared radiation. The generated infrared radiation may be broadband and, in particular, may include spectral components at wavelength λ2.

[0108] Variations on the variant according to FIG. 6 are conceivable. For example, one (or more) of the radiation sources 13 to 21 can be accommodated in a separate cavity. The radiation source for the emission of short-wave light with the converter material 41, which is not shown, can also be accommodated in a separate cavity. The accommodation in separate cavities has the advantage that thereby a “cross-talk” with other radiation sources can be avoided in a simple way.

[0109] The optoelectronic radiation source 71 shown in cross-section in FIG. 7 comprises a substrate 45 on which a first layer 47 is arranged. The first layer 47 is an epitaxial layer for generating blue light which is emitted in particular upwards. The formation of such a layer on a substrate for generating blue light is known per se. This layer can be formed from several thinner, individual layers, in particular for forming an active zone.

[0110] A second layer 49 is formed over a portion of the first layer 47, which is at least one epitaxial layer for generating infrared radiation, e.g., at one of the wavelengths λ1 to λ4. This epitaxial layer can be optically excited by the radiation from the first layer 47 and in turn generate and emit IR radiation. It is also possible for the entire first layer 47 to be covered by the second layer 49. Partial coverage has the advantage that the blue light from the first layer 47 is still available for conversion to white light. This conversion can be done by means of a conversion material arranged over the second layer 49 (not shown). The optoelectronic radiation source of FIG. 7 therefore fulfills a kind of double function, since both IR light and white light can be generated.

[0111] The circuit diagram shown in FIG. 8 illustrates one possibility for the electrical connection of optoelectronic radiation sources 51, 53, 55, which may be LEDs or LED chips. The radiation sources 51 and 53 for generating infrared radiation are connected in series. The current through the LEDs or LED chips can thus be kept constant, in particular by means of a current control element 57, such as a series resistor. The radiation source 55 for generating white light, in particular via conversion from blue or UV light, is connected in series with the current control element 57. The radiation source 55 and the current control element 57 are connected in parallel with the radiation sources 51 and 53, as shown in FIG. 8.

[0112] A voltage drop of 1.9 volts can occur at radiation source 51 and a voltage drop of 1.8 volts can occur at radiation source 53, while a voltage drop of 3 volts occurs at radiation source 55 and a voltage drop of 0.7 volts occurs at current control element 57. Different voltage drops at the different radiation sources can thus be compensated by a parallel connection and the use of series resistors or current control elements.

[0113] FIG. 9 illustrates a workplace scenario for illuminating a workstation 59 in a room or the like. A variant of an optoelectronic radiation device 61 according to the invention, which is configured to emit an IR broad spectrum according to the above explanations, can be arranged on the ceiling of the room in addition to lamps 63, 65 emitting white light. This allows a person working at the workplace to be exposed to the IR broad spectrum.

[0114] In the scenario shown in FIG. 10, two optoelectronic radiation devices 67 according to the invention, which can emit both white light and infrared radiation (see the spectra in FIGS. 1b, 2b and 3b), can be arranged on the ceiling above a workstation 67. Thus, not only white light but also infrared radiation can be provided at the workstation 67.

[0115] In the scenario of FIG. 11, in contrast to the scenario of FIG. 9, the optoelectronic radiation device 61 is not arranged on the ceiling next to the lamps 63, 65, but away from the ceiling and, for example, on the floor of the workspace. The optoelectronic radiation device 61 is arranged and designed in such a way that the generated infrared radiation is emitted in the form of a radiation cone 69. This radiation cone 69 floods the room and illuminates the ceiling of the room, as FIG. 11 illustrates.

REFERENCE LIST

[0116] 11 optoelectronic radiation source [0117] 13 optoelectronic radiation source [0118] 15 optoelectronic radiation source [0119] 17 optoelectronic radiation source [0120] 21 optoelectronic radiation source [0121] 23 sensor [0122] 25 optoelectronic radiation source [0123] 27 optoelectronic radiation source [0124] 29 optoelectronic radiation source [0125] 31 optoelectronic radiation source [0126] 33 optoelectronic radiation source [0127] 35 cavity [0128] 37 housing [0129] 39 cavity [0130] 41 cavity [0131] 43 converter [0132] 45 substrate [0133] 47 layer [0134] 49 layer [0135] 51 optoelectronic radiation source [0136] 53 optoelectronic radiation source [0137] 55 optoelectronic radiation source [0138] 57 current control element [0139] 59 workplace [0140] 61 optoelectronic radiation device [0141] 63 lamp [0142] 65 lamp [0143] 67 optoelectronic radiation device [0144] 69 light cone [0145] 71 optoelectronic radiation source