METHOD FOR WATER-REPELLENT TREATMENT OF BORON NITRIDE POWDER AND WATER-REPELLENT-TREATED BORON NITRIDE

Abstract

Disclosed in the present invention are a method for water-repellent coating treatment of a boron nitride powders and water-repellent treated boron nitride, the method comprising producing a water-repellent coating layer on the surface of the boron nitride powders by plasma treatment using a silicon-containing organic compound containing silicone, wherein the water-repellent coating layer remains on the boron nitride through chemical binding with the boron nitride even after ultrasonic water washing.

Claims

1. A method for water-repellent treatment of boron nitride powders, the method including performing plasma treatment on the boron nitride powders.

2. The method of claim 1, wherein the method includes: placing the boron nitride powders in a plasma generated region; and exposing the boron nitride powders to plasma of the plasma generated region.

3. The method of claim 1, wherein the plasma includes plasma of a silicon-containing organic compound.

4. The method of claim 3, wherein the silicon-containing organic compound includes hexamethyldisiloxane, tetraethoxysilane (TEOS) or trimethylchlorosilane (TMCS).

5. The method of claim 4, wherein performing the plasma treatment includes forming a water-repellent coating layer on surfaces of the boron nitride powders.

6. The method of claim 5, wherein a thickness of the water-repellent coating layer is 40 nm or smaller.

7. The method of claim 5, wherein the water-repellent coating layer contains silicon, carbon and oxygen, wherein the water-repellent coating layer chemically bonds to the boron nitride.

8. The method of claim 5, wherein the water-repellent coating layer remains on the boron nitride after ultrasonic water washing is performed thereon.

9. The method of claim 5, wherein the water-repellent treated boron nitride powders are mixed into a non-polar solvent to form a colloid.

10. The method of claim 3, wherein the method further includes injecting a vaporized silicon-containing organic compound into the plasma generated region.

11. The method of claim 10, wherein the injection of the vaporized silicon-containing organic compound includes passing a solution of the silicon-containing organic compound through a bubbler, and injecting the vaporized silicon-containing organic compound and a carrier gas into the plasma generated region.

12. A water-repellent coating treated boron nitride produced by the method of claim 3, wherein the water-repellent coating treated boron nitride includes boron nitride powders, and a water-repellent coating layer formed on the boron nitride powders, wherein the water-repellent coating layer is chemically bonded to the boron nitride.

13. The water-repellent coating treated boron nitride of claim 12, wherein a thickness of the water-repellent coating layer is 40 nm or smaller.

14. The water-repellent coating treated boron nitride of claim 12, wherein the water-repellent coating layer contains silicon, carbon and oxygen, wherein the water-repellent coating layer is chemically bonded to the boron nitride.

15. The water-repellent coating treated boron nitride of claim 12, wherein the water-repellent coating layer remains on the boron nitride after ultrasonic water washing is performed thereon.

16. The water-repellent coating treated boron nitride of claim 12, wherein the water-repellent treated boron nitride powders are mixed into a non-polar solvent to form a colloid.

Description

BRIEF DESCRIPTION OF DRAWINGS

[0024] FIG. 1 is a schematic diagram illustrating a surface dielectric barrier discharge plasma apparatus used for water-repellent treatment of boron nitride powders according to one embodiment of the present disclosure.

[0025] FIG. 2 is a diagram for illustrating a method for water-repellent treatment of boron nitride powders according to one embodiment of the present disclosure.

[0026] FIG. 3 is a view showing a scanning electron microscope image of a sample 1 prepared according to a present example 1 of the present disclosure.

[0027] FIG. 4 and FIG. 5 are diagrams showing scanning electron microscope images of a comparative sample 1 and a comparative sample 2 prepared according to a comparative example 1 and a comparative example 2 of the present disclosure, respectively.

[0028] FIG. 6 is a view showing a field emission transmission electron microscope image of the sample 1 prepared according to the present example 1 of the present disclosure.

[0029] FIG. 7 and FIG. 8 are diagrams showing field emission transmission electron microscope images of the comparative sample 1 and the comparative sample 2, respectively, prepared according to the comparative example 1 and the comparative example 2 of the present disclosure.

[0030] FIG. 9 is a diagram showing an EDAX mapping image of the sample 1 prepared according to the present example 1 of the present disclosure.

[0031] FIG. 10 and FIG. 11 are diagrams showing EDAX mapping images of the comparative sample 1 and the comparative sample 2, respectively, prepared according to the comparative example 1 and the comparative example 2 of the present disclosure.

[0032] FIG. 12 is a view showing an XPS spectrum of each of samples prepared according to the present example 1, the comparative example 1 and the comparative example 2 of the present disclosure.

[0033] FIG. 13 is an image showing a dispersion evaluation result of each of the samples prepared according to the present example 1 and the comparative example 2 of the present disclosure.

DETAILED DESCRIPTIONS

[0034] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings. The present disclosure may have various changes and modifications. Specific embodiments are illustrated in the drawings and are described in the Detailed descriptions. However, the embodiments are not intended to limit the present disclosure to specific forms. All changes, equivalents to, and substitutes may be included in the spirit and scope of the present disclosure. In describing the drawings, similar reference numerals are used for similar components.

[0035] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. As used herein, the singular forms “a” and “an” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises”, “comprising”, “includes”, and “including” when used in this specification, specify the presence of the stated features, integers, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and/or portions thereof.

[0036] Unless otherwise defined, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0037] FIG. 1 is a schematic diagram illustrating a surface dielectric barrier discharge (hereinafter referred to as SDBD) plasma apparatus among plasma treatment apparatuses used for water-repellent treatment of boron nitride powders according to one embodiment of the present disclosure. As shown in FIG. 1, the SDBD plasma apparatus 100 that may be used in one embodiment of the present disclosure includes a treatment target 300 located in a plasma generated region 210; and a first inlet for injecting gas into the plasma generated region 210. The SDBD plasma apparatus 100 includes a chamber 110 made of an insulator and having an inner space 200 defined therein; a dielectric layer 130 and disposed in the inner space 200; a first electrode 140 placed on one face of the dielectric layer 130; a second electrode 120 placed on the opposite face of the dielectric layer, wherein the second electrode 120 includes a plurality of bars extending in one direction and spaced apart from each other; and a voltage applicator 160 connected to the first electrode 140 and the second electrode 120 to apply a voltage to the two electrodes. Additionally, the SDBD plasma apparatus may include a cooling fluid channel 150, and a second inlet through which the cooling fluid is injected into the cooling fluid channel; and a second outlet through which the injected cooling fluid exits.

[0038] FIG. 2 is a diagram for illustrating a method for water-repellent treatment of boron nitride powders of the present disclosure.

[0039] Referring to FIG. 2, the method for water-repellent treatment of boron nitride powders in accordance with one embodiment of the present disclosure is described as follows.

[0040] The method for water-repellent treatment of boron nitride powders according to the present disclosure includes placing boron nitride powders as a treatment target into the plasma generated region and on a top face of the first electrode provided inside the plasma apparatus configured as described above.

[0041] In order to produce a silicon-containing organic compound plasma atmosphere inside the plasma apparatus, a vaporized silicon-containing organic compound is injected into the plasma generated region. The injection of the vaporized silicon-containing organic compound may be carried out by passing a solution of the silicon-containing organic compound through a bubbler and then injecting the compound gas as the process gas and a carrier gas into the plasma generated region through the first gas inlet. In this connection, the silicon-containing organic compound used may be a carbon compound containing silicon, such as hexamethyldisiloxane, tetraethoxysilane (TEOS) or trimethylchlorosilane (TMCS).

[0042] Then, when a voltage is applied to the first and second electrodes in the plasma apparatus, a silicon-containing organic compound plasma is generated around the second electrode. The generated silicon-containing organic compound plasma may be diffused into pores existing between the boron nitride powders present on the top face of the first electrode. The diffused silicon-containing organic compound plasma may produce a functional group containing silicon exhibiting hydrophobic properties on surfaces of the boron nitride powders. For example, the functional group containing the silicon may be a silane group.

[0043] The thus water-repellent coating treated boron nitride may be composed of the boron nitride particles and the water-repellent coating layer formed on the surfaces of the boron nitride particles. The water-repellent coating layer may contain silicon, carbon and oxygen, and may chemically bond to the boron nitride. Further, the water-repellent coating layer may have a thickness of 40 nm or greater.

[0044] The water-repellent coating treated boron nitride has strong water-repellent ability due to chemical bonding between boron nitride and the water-repellent coating layer. Thus, even after ultrasonic water washing, the water-repellent coating layer remains on the boron nitride without losing the water-repellent properties. When the water-repellent coating treated boron nitride powders are mixed with a non-polar solvent, the powders are not agglomerated but forms a colloid and disperses well.

[0045] Hereinafter, a method for water-repellent coating treatment of boron nitride powders and the water-repellent coating treated boron nitride according to the present example and the comparative examples of the present disclosure will be described in more detail.

Present Example 1: Preparation of Present boron nitride Powder Sample 1

[0046] A hexamethyldisiloxane (hereinafter referred to as HMDSO) silicon-containing organic compound was used as a process gas and a N.sub.2 purge gas was used as a carrier gas. Using the plasma treatment apparatus configured as shown in FIG. 1, the plasma treatment was carried out based on the method for water-repellent treatment of boron nitride powders as described above. Thus, a present boron nitride powder sample 1 was obtained. The present boron nitride powder sample 1 was referred to as “HMDSO bubbling (N2) plasma—BN”.

Comparative Example 1: Preparation of Comparative boron nitride Powder Sample 1

[0047] A comparative boron nitride powder sample 1 was obtained via substantially the same process as the preparation process of the water-repellent coating treated boron nitride powder sample 1 according to the present example 1, except that plasma treatment was not carried out. The comparative boron nitride powder sample 1 was referred to as “HMDSO bubbling (N.sub.2)—BN”.

Comparative Example 2: Preparation of Comparative boron nitride Powder Sample 2

[0048] A pure comparative boron nitride powder sample 2 which was not subjected to any treatment was prepared. The pure comparative boron nitride powder sample 2 was referred to as “Untreated BN”.

Surface Analysis-1: Scanning Electron Microscopy Image

[0049] A scanning electron microscope image of each of the present example 1, the comparative example 1 and the comparative example 2 as prepared above was obtained under an acceleration voltage of 3 kV using a field emission scanning electron microscope (Gemini, Carl Zeiss Microscopy, Germany). The results are shown in FIG. 3 to FIG. 5.

[0050] FIG. 3 shows a scanning electron microscope image of the present boron nitride powder sample 1 according to the present example 1 of the present disclosure.

[0051] Referring to FIG. 3, it may be identified that a foreign matter is formed at a surface of the sample 1 obtained by performing HMDSO bubbling and plasma treatment on boron nitride powders.

[0052] FIG. 4 and FIG. 5 show scanning electron microscope images of the comparative boron nitride powder sample 1 and the comparative boron nitride powder sample 2 as prepared according to the comparative example 1 and the comparative example 2 of the present disclosure, respectively.

[0053] Referring to FIG. 4 and FIG. 5, compared with FIG. 6, it may be seen that a surface of the comparative boron nitride powder sample 1 subjected only to HMDSO bubbling using N.sub.2 gas and a surface of the pure comparative boron nitride powder sample 2 are relatively clean.

Surface Analysis-2: Field Emission Transmission Electron Microscopy Image

[0054] A field emission transmission electron microscope image of each of the present example 1, the comparative example 1 and the comparative example 2 as prepared above was obtained under 200 kV accelerating voltage using a cold FEG field emission transmission electron microscope (JEM-ARM200, JEOL USA, Inc. the United States). The results are shown in FIG. 6 to FIG. 8.

[0055] FIG. 6 is a view showing a field emission transmission electron microscope image of the present boron nitride powder sample 1 according to the present example 1 of the present disclosure. (a), (b), (c), and (d) in FIG. 6 show magnified surface images having a magnification increasing in this order.

[0056] Referring to FIG. 6, it may be seen that a new layer having a thickness of 40 nm or smaller is formed at a surface of the present boron nitride powder sample 1 obtained by performing the HMDSO bubbling and plasma treatment on boron nitride powders.

[0057] FIG. 7 and FIG. 8 show field emission transmission electron microscope images of the comparative boron nitride powder sample 1 and the comparative boron nitride powder sample 2 prepared according to the comparative example 1 and the comparative example 2, respectively.

[0058] Referring to FIG. 7 and FIG. 8, compared with FIG. 6, it may be identified that a new layer is not formed at a surface of the comparative boron nitride powder sample 1 subjected only to HMDSO bubbling using N.sub.2 gas and a surface of the pure comparative boron nitride powder sample 2.

Surface Analysis-3: EDAX Mapping Image

[0059] An EDAX mapping image of each of the present example 1, the comparative example 1 and the comparative example 2 as prepared above was obtained under an acceleration voltage of 3 kV using a field emission scanning electron microscope (Gemini, Carl Zeiss Microscopy, Germany) The results are shown in FIG. 9 to FIG. 11.

[0060] FIG. 9 shows the EDAX mapping image of the present sample 1 according to the present example 1 of the present disclosure.

[0061] Referring to FIG. 9, it may be identified that elements present at the surface of the sample 1 obtained by performing HMDSO bubbling and plasma treatment on boron nitride powders include silicon (Si), carbon (C) and oxygen (O) in addition to boron (B) and nitrogen (N). Silicon (Si) may be considered to be due to the use of hexamethyldisiloxane (HMDSO) as a liquid silicon precursor. Further, due to the presence of carbon (C) and oxygen (O), the boron nitride powders may be chemically bonded to the layer formed on the surface thereof. Based on the results shown in FIG. 3 and FIG. 6, it may be seen that the layer formed at the surface of the present boron nitride powder sample 1 subjected to the HMDSO bubbling and the plasma treatment is a water-repellent coating layer. It may be seen that the present sample 1 has water-repellency ability due to the silicon (Si) present in the water-repellent coating layer.

[0062] FIG. 10 and FIG. 11 show boron nitride powders EDAX mapping images of the comparative boron nitride powder sample 1 and the comparative boron nitride powder sample 2 as prepared according to the comparative example 1 and the comparative example 2, respectively.

[0063] Referring to FIG. 10 and FIG. 11, compared with FIG. 9, it may be identified that only boron (B) and nitrogen (N) are present at a surface of the comparative boron nitride powder sample 1 subjected only to HMDSO bubbling using N.sub.2 gas and a surface of the pure comparative boron nitride powder sample 2.

[0064] Thus, it may be seen that a water-repellent coating layer is not formed on the surface of the boron nitride powders of each of the comparative sample 1 and the comparative sample 2.

[0065] In particular, referring to the results of the comparative sample 1 compared to the present sample 1, it may be seen that only the HMDSO bubbling using N.sub.2 gas cannot form a water-repellent coating layer on the surface of the boron nitride powder.

Surface Analysis-4: XPS

[0066] An XPS spectrum of each of the present example 1, the comparative example 1 and the comparative example 2 as prepared above was measured under a voltage of 13 kV, using X-ray Photoelectron Spectroscopy (ESCA2000, VG microtech, UK), and using twin anodes Al K.sub.a ( 1,486.6 eV) and Mg K.sub.a (1,253.6 eV) as an X-ray generation source material. The results are shown in FIG. 12.

[0067] Referring to FIG. 12, it may be identified that the MDSO bubbling (N.sub.2) plasma—BN as the present sample 1 according to the present example 1 has Si binding energy based on peaks of Si 2p and Si 2s. Thus, it may be seen that the boron nitride powders are chemically bonded to the water-repellent coating layer formed on the surface thereof.

[0068] On the contrary, it may be identified that in the comparative sample 1 and the comparative sample 2 according to the comparative example 1 and the comparative example 2, respectively, only peaks of B1s and N1s are prominent, but the peaks of Si 2p and Si 2s are not present, and thus the Si bond is absent.

Dispersion Evaluation

[0069] A dispersion evaluation was performed on the present example 1 and the comparative example 2 as prepared above by respectively adding the present boron nitride powder sample 1 and the comparative boron nitride powders sample 2 to n-hexane solution as a non-polar solvent. The result is shown in FIG. 13.

[0070] Referring to FIG. 13, (a) in FIG. 13 showing the dispersion of the present boron nitride powder sample 1 according to the present example 1 may identify a colloidal state in which powders of the present boron nitride powder sample 1 are not agglomerated with each other. Unlike (a) in FIG. 13, (b) in FIG. 13 showing the dispersion of the comparative boron nitride powders sample 2 may identify that powders of the comparative boron nitride powder sample 2 are aggregated with each other and are precipitated in a larger grain state.

[0071] Thus, it may be identified that the water-repellent coating layer formed on the surface of the boron nitride powders of the present sample 1 obtained by performing the HMDSO bubbling and the plasma treatment on boron nitride powders according to the present example 1 has the water-repellency ability.

[0072] The present disclosure has been described with reference to the preferred embodiment of the present disclosure. Those skilled in the art will understand that various modifications and changes may be made to the present disclosure without departing from the spirit and scope of the present disclosure set forth in the following claims.

REFERENCE NUMERALS

[0073] 100: surface dielectric barrier discharge plasma apparatus

[0074] 110: chamber

[0075] 120: second electrode

[0076] 130: dielectric layer

[0077] 140: first electrode

[0078] 150: cooling fluid channel

[0079] 160: voltage applicator

[0080] 200: inner space

[0081] 210: plasma generated region

[0082] 300: treatment target