Radiation source and device for feeding back emitted radiation to a laser source

Abstract

An FEL includes a feedback device for feeding back emitted illumination radiation.

Claims

1. A radiation source, comprising: a free electron laser configured to emit radiation having a wavelength of at most 30 nm; and a device configured to feed back the emitted radiation to the free electron laser, the device comprising: a first optical component configured to couple out of a beam path the emitted radiation; and a second optical component configured to couple into the free electron laser at least a portion of the coupled-out radiation, wherein the first optical component comprises a diffractive optical component configured to separate an order of diffraction of the emitted radiation and send the separated order of diffraction of the emitted radiation to the second optical component without sending at least one other order of diffraction to the second optical component, and wherein the separated out order of diffraction of the emitted radiation comprises the zeroth diffraction order of the emitted radiation.

2. The radiation source of claim 1, wherein the first optical component comprises a grazing incidence mirror.

3. The radiation source of claim 2, wherein the grazing incidence mirror comprises at least one member selected from the group consisting of silicon carbide (SiC), silicon (Si), copper (Cu), ruthenium (Ru), aluminum (Al), and diamond.

4. The radiation source of claim 2, wherein the second optical component comprises a grazing incidence mirror.

5. The radiation source of claim 1, wherein the second optical component comprises a grazing incidence mirror.

6. The radiation source of claim 5, wherein the grazing incidence mirror comprises at least one member selected from the group consisting of silicon carbide (SiC), silicon (Si), copper (Cu), ruthenium (Ru), aluminum (Al), and diamond.

7. The radiation source of claim 1, wherein the diffractive optical component is drivable.

8. The radiation source of claim 1, wherein the diffractive optical component comprises lines perpendicular to a direction of the radiation incident on the diffractive optical component.

9. The radiation source of claim 1, wherein the diffractive optical component comprises lines parallel to a direction of the radiation incident on the diffractive optical component.

10. The radiation source of claim 1, wherein the diffractive optical component comprises a cooling unit.

11. The radiation source of claim 1, wherein the device comprises two grazing incidence mirrors and two normal incidence mirrors.

12. A method, comprising: providing a radiation source according to claim 1; using the FEL to generate radiation; using the diffractive optical component to separate an order of diffraction of the radiation; and coupling into the FEL at least a portion of the separated order of diffraction of the radiation without coupling into the FEL at least one other order of diffraction of the radiation.

13. The method of claim 12, further comprising driving the diffractive optical component to control the radiation guided to an image field.

14. An illumination system, comprising: a radiation source according to claim 1, wherein the illumination system is selected from the group consisting of a microlithographic illumination system and a metrology illumination system.

15. A system, comprising: an illumination system comprising a radiation source according to claim 1, the illumination system configured to illuminate an object field; and a projection optical unit configured to image the object field into an image field, wherein the system is a microlithographic projection exposure system.

16. A method of using a microlithographic projection exposure system comprising an illumination system and a projection optical system, the method comprising: using the illumination system to illuminate a reticle in an object field with radiation; using the projection optical system to image the reticle onto a light-sensitive material in an image field, wherein the illumination system comprises a radiation source according to claim 1.

17. The radiation source of claim 1, wherein the diffractive optical component comprises a blazed grating.

18. The radiation source of claim 1, wherein the diffractive optical component comprises a grating having a line density of at least 30 lines per millimeter.

19. A radiation source, comprising: a free electron laser configured to emit radiation having a wavelength of at most 30 nm; and a device configured to feed back the emitted radiation to the free electron laser, the device comprising first, second, third and fourth mirrors, wherein: the first mirror comprises a diffractive optical element; the first mirror is configured to separate an order of diffraction of the emitted radiation and send the separated order of diffraction of the emitted radiation to the second mirror without sending at least one other order of diffraction to the second mirror; the separated out order of diffraction of the emitted radiation comprises the zeroth diffraction order of the emitted radiation; the second mirror is configured to reflect at least a portion of the separated order of diffraction of the emitted radiation to the third mirror; the third mirror is configured to reflect at least a portion of the separated order of diffraction of the emitted radiation to the fourth mirror; and the fourth mirror is configured to couple into the free electron laser at least a portion of the separated order of diffraction of the emitted radiation.

20. The radiation source of claim 19, wherein: the first mirror is a grazing incidence mirror; the second mirror is a normal incidence mirror; the third mirror is a normal incidence mirror; and the fourth mirror is a grazing incidence mirror.

21. The radiation source of claim 19, wherein the diffractive optical element is drivable.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) Further features and details of the disclosure will become apparent from the description of exemplary embodiments with reference to the figures, in which:

(2) FIG. 1 schematically shows the basic construction of a projection exposure system having a plurality of n scanners,

(3) FIG. 2 schematically shows an alternative illustration of the beam path in the projection exposure system in accordance with FIG. 1, and

(4) FIG. 3 schematically shows a detail view of the radiation source module of the projection exposure system in accordance with FIG. 1 with a device for feeding back illumination radiation.

DETAILED DESCRIPTION

(5) Firstly, certain constituent parts of a projection exposure system 1 will be described below with reference to FIGS. 1 and 2. The description of the general construction of the projection exposure system should be understood to be by way of example and not limiting. For further details, reference should be made to the description of DE 10 2016 217 426 A1 as a representative, which is hereby fully incorporated in the present disclosure as part thereof. In particular, the output coupling and/or beam expanding optical units disposed downstream of the radiation source module 2 can be embodied differently than is illustrated in FIGS. 1 and 2.

(6) The subdivision of the projection exposure system 1 into subsystems that is carried out below serves primarily for the conceptual demarcation thereof. The subsystems can form separate structural subsystems. However, the division into subsystems need not necessarily be reflected in a structural demarcation.

(7) The projection exposure system 1 includes a radiation source module 2 and one or a plurality of scanners 3.sub.i.

(8) The radiation source module 2 includes a radiation source 4 for generating illumination radiation 5.

(9) The radiation source 4 is a free electron laser (FEL), for example.

(10) The radiation source 4 has for example an average power in the range of 1 kW to 25 kW. It has a pulse frequency in the range of 10 MHz to 10 GHz. Each individual radiation pulse can amount to an energy of 83 μJ for example. Given a radiation pulse length of 100 fs, this corresponds to a radiation pulse power of 833 MW.

(11) The radiation source 4 can also have a repetition rate in the kilohertz range, for example of 100 kHz, or in the low megahertz range, for example at 3 MHz, in the medium megahertz range, for example at 30 MHz, in the upper megahertz range, for example at 300 MHz, or even in the gigahertz range, for example at 1.3 GHz.

(12) The radiation source 4 is an EUV radiation source, for example. The radiation source 4 emits in particular radiation having a wavelength of at most 30 nm, in particular EUV radiation in the wavelength range of, for example, between 2 nm and 30 nm, in particular between 2 nm and 15 nm.

(13) The radiation source 4 emits the illumination radiation 5 in the form of a raw beam 6. The raw beam 6 has a very small divergence. The divergence of the raw beam 6 can be less than 10 mrad, in particular less than 1 mrad, in particular less than 100 μrad, in particular less than 10 μrad. To facilitate the description of positional relationships, coordinates of a Cartesian xyz-coordinate system are used below. The x-coordinate together with the y-coordinate regularly spans a beam cross section of the illumination radiation 5. The z-direction regularly runs in the radiation direction of the illumination radiation 5. In the region of the object plane 21 and of the image plane 24, respectively, the y-direction runs parallel to a scan direction. The x-direction runs perpendicular to the scan direction. The raw beam 6 is emitted in a specific direction by the radiation source 4. The direction is also designated hereinafter as pointing P.

(14) The raw beam 6 can have an etendue that is less than 0.1 mm.sup.2, in particular less than 0.01 mm.sup.2. The etendue is the smallest volume of a phase space which contains 90% of the energy of the illumination radiation 5 emitted by the radiation source 2. Definitions of the etendue corresponding thereto can be found for example in EP 1 072 957 A2 and U.S. Pat. No. 6,198,793 B1.

(15) The radiation source module 2 furthermore includes a beam shaping optical unit 7 disposed downstream of the radiation source 4. The beam shaping optical unit 7 serves for generating a collective output beam 8 from the raw beam 6. The collective output beam 8 has a very small divergence. The divergence of the collective output beam 8 can be less than 10 mrad, in particular less than 1 mrad, in particular less than 100 μrad, in particular less than 10 μrad.

(16) In particular, the diameter of the raw beam 6 or of the collective output beam 8 can be influenced via the beam shaping optical unit 7. In particular, an expansion of the raw beam 6 can be achieved via the beam shaping optical unit 7. The raw beam 6 can be expanded via the beam shaping optical unit 7 in particular by a factor of at least 1.5, in particular at least 2, in particular at least 3, in particular at least 5, in particular at least 10. The expansion factor is in particular less than 1000. It is also possible to expand the raw beam 6 to different extents in different directions. In particular, it can be expanded to a greater extent in an x-direction than in a y-direction. In this case, the y-direction in the region of the object field 11.sub.i corresponds to the scan direction. The divergence of the collective output beam 8 can be less than the divergence, in particular less than half the divergence, of the raw beam 6.

(17) For further details of the beam shaping optical unit 7, reference should be made to DE 10 2013 223 935 A1, which is hereby incorporated into the present application. The beam shaping optical unit 7 can include, in particular, one or two beam shaping mirror groups each having two mirrors. The beam shaping mirror groups serve, in particular, for the beam shaping of the collective output beam 8 in mutually perpendicular planes which run parallel to the propagation direction of the collective output beam 8.

(18) The beam shaping optical unit 7 can also include further beam shaping mirrors.

(19) The beam shaping optical unit 7 can include in particular cylindrical mirrors, in particular at least one convex and at least one concave cylindrical mirror. It can also include mirrors having a freeform profile. Such mirrors have in each case a height profile which is not representable as a conic section.

(20) In addition, the intensity profile of the raw beam 6 can be influenced via the beam shaping optical unit 7.

(21) Moreover, the radiation source module 2 includes an output coupling optical unit 9, described in even greater detail below. The output coupling optical unit 9 serves for generating a plurality of, namely n, individual output beams 10.sub.i (i=1 to n) from the collective output beam 8. The individual output beams 10.sub.i in each case form beams for illuminating an object field 11.sub.i. The individual output beams 10.sub.i are in each case assigned to one of the scanners 3.sub.i. The beams of the individual output beams 10.sub.i can in each case include a plurality of separate partial beams 12.sub.i.

(22) As will be described in even greater detail below, the functionality of the beam shaping optical unit 7 can be integrated into the output coupling optical unit 9. In this case, a separate beam shaping optical unit 7 can be dispensed with.

(23) In the case of the alternative in accordance with FIG. 2, the output coupling optical unit 9 is arranged downstream of the beam shaping optical unit 7 in the direction of propagation of the illumination radiation. Preferably, the output coupling optical unit 9 is arranged directly downstream of the radiation source 4, in particular before the raw beam 6 is influenced via the beam shaping optical unit 7. In this case, provision can be made of separate beam shaping optical units for each of the individual output beams 10.sub.i. Such arrangement of the output coupling optical unit 9 makes it possible to reduce radiation losses on account of damping at the output coupling optical unit 9.

(24) The radiation source module 2 is arranged in an evacuatable housing, in particular.

(25) The scanners 3.sub.i in each case include a beam guiding optical unit 13.sub.i and a projection optical unit 14.sub.i.

(26) The beam guiding optical unit 13.sub.i serves for guiding the illumination radiation 5, in particular the respective individual output beams 10.sub.i, to the object fields 11.sub.i of the individual scanners 3.sub.i.

(27) The projection optical unit 14.sub.i serves in each case for imaging a reticle 22.sub.i arranged in one of the object fields 11.sub.i into an image field 23.sub.i, in particular onto a wafer 25.sub.i arranged in the image field 23.sub.i.

(28) The beam guiding optical unit 13.sub.i includes, in the order of the beam path of the illumination radiation 5, in each case a deflection optical unit 15.sub.i, an input coupling optical unit 16.sub.i, in particular in the form of a focusing assembly, and an illumination optical unit 17.sub.i. The input coupling optical unit 16.sub.i can in particular also be embodied as a Wolter type III collector.

(29) The deflection optical unit 15.sub.i can also be integrated into the output coupling optical unit 9. The output coupling optical unit 9 can be embodied in particular in such a way that it already deflects the individual output beams 10.sub.i in a desired direction. In accordance with one variant, the deflection optical units 15.sub.i in their entirety can also be dispensed with. Generally, the output coupling optical unit 9 and the deflection optical units 15.sub.i can form an output coupling-deflection device.

(30) For different variants of the deflection optical units 15.sub.i, reference should be made to DE 10 2013 223 935 A1, for example, which is hereby incorporated in the present application as part thereof.

(31) The input coupling optical unit 16.sub.i serves in particular for coupling in the illumination radiation 5, in particular one of the individual output beams 10.sub.i generated by the output coupling optical unit 9, into a respective one of the illumination optical units 17.sub.i.

(32) The beam guiding optical unit 13.sub.i together with the beam shaping optical unit 7 and the output coupling optical unit 9 form constituent parts of an illumination device 18.

(33) The illumination device 18, just like the radiation source 4, is part of an illumination system 19.

(34) Each of the illumination optical units 17.sub.i is respectively assigned one of the projection optical units 14.sub.i. Together the illumination optical unit 17.sub.i and the projection optical unit 14.sub.i assigned to one another are also referred to as an optical system 20.sub.i.

(35) The illumination optical unit 17.sub.i serves in each case for transferring illumination radiation 5 to a reticle 22.sub.i arranged in the object field 11.sub.i in an object plane 21. The projection optical unit 14.sub.i serves for imaging the reticle 22.sub.i, in particular for imaging structures on the reticle 22.sub.i, onto a wafer 25.sub.i arranged in an image field 23.sub.i in an image plane 24.

(36) The illumination optical unit 17.sub.i in each case includes a first facet mirror 28.sub.i and a second facet mirror 29.sub.i, the function of which corresponds in each case to that of the facet mirrors known from the prior art. The first facet mirror 28.sub.i can be a field facet mirror, in particular. The second facet mirror 29.sub.i can be a pupil facet mirror, in particular. However, the second facet mirror 29.sub.i can also be arranged at a distance from a pupil plane of the illumination optical unit 17. This general case is also referred to as specular reflector.

(37) The facet mirrors 28.sub.i, 29.sub.i each include a multiplicity of facets 28a, 29a. During the operation of the projection exposure system 1, each of the first facets 28a is respectively assigned one of the second facets 29a. The facets 28a, 29a assigned to one another in each case form an illumination channel of the illumination radiation 5 for illuminating the object field 11 at a specific illumination angle.

(38) The facets 28a of the first facet mirror 28.sub.i can be embodied such that they are displaceable, in particular tiltable, in particular with two degrees of freedom of tilting in each case. The facets 28a of the first facet mirror 28.sub.i can be embodied as virtual facets. This should be understood to mean that they are formed by a variable grouping of a plurality of individual mirrors, in particular a plurality of micromirrors. For details, reference should be made to WO 2009/100856 A1, which is hereby incorporated in the present application as part thereof.

(39) The facets 29a of the second facet mirror 29.sub.i can correspondingly be embodied as virtual facets 29a. They can also correspondingly be embodied such that they are displaceable, in particular tiltable.

(40) The reticle 22 having structures that are reflective for the illumination radiation 5 is carried by a reticle holder 30. The reticle holder 30 is displaceable in a manner driven via a displacement device 33.

(41) The wafer 25 is held by a wafer holder 32. The wafer holder 32 is displaceable in a manner controlled via a displacement device 33.

(42) The displacement device 31 of the reticle holder 30 and the displacement device 33 of the wafer holder 32 can be signal-connected to one another. They are synchronized, in particular. The reticle 22 and the wafer 25 are displaceable in particular in a synchronized manner with respect to one another.

(43) During projection exposure for producing a micro- or nanostructured component, both the reticle 22 and the wafer 25 are displaced in a synchronized manner, in particular scanned in a synchronized manner, by the corresponding driving of the displacement devices 31 and 33. The wafer 25 is scanned at a scan rate of 600 mm/s, for example, during projection exposure.

(44) The projection exposure system 1 includes in particular at least two, in particular at least three, in particular at least four, in particular at least five, in particular at least six, in particular at least seven, in particular at least eight, in particular at least nine, in particular at least ten, scanners 3.sub.i. The projection exposure system 1 can include up to twenty scanners 3.sub.i.

(45) The scanners 3.sub.i are supplied with illumination radiation 5 by the common radiation source module 2, in particular the common radiation source 4.

(46) The projection exposure system 1 serves for producing micro- or nanostructured components, in particular electronic semiconductor components.

(47) The input coupling optical unit 16.sub.i is arranged in the beam path between the radiation source module 2, in particular the output coupling optical unit 9, and a respective one of the illumination optical units 17.sub.i. It is embodied in particular as a focusing assembly. It serves for transferring a respective one of the individual output beams 10.sub.i into an intermediate focus 26.sub.i in an intermediate focal plane 27. The intermediate focus 26.sub.i can be arranged in the region of a through opening of a housing of the optical system 20.sub.i or of the scanner 3.sub.i. The housing is evacuatable, in particular.

(48) The illumination optical unit 17.sub.i in each case includes a first facet mirror and a second facet mirror, the function of which corresponds in each case to that of the facet mirrors known from the prior art. The first facet mirror can be a field facet mirror, in particular. The second facet mirror can be a pupil facet mirror, in particular. However, the second facet mirror can also be arranged at a distance from a pupil plane of the illumination optical unit 17.sub.i. This general case is also referred to as specular reflector.

(49) The facet mirrors in each case include a multiplicity of first and second facets, respectively. During the operation of the projection exposure system 1, each of the first facets is respectively assigned one of the second facets. The facets assigned to one another in each case form an illumination channel of the illumination radiation 5 for illuminating the object field 11.sub.i at a specific illumination angle.

(50) The channel-by-channel assignment of the second facets to the first facets is carried out depending on a desired illumination, in particular a predefined illumination setting. The facets of the first facet mirror can be embodied such that they are displaceable, in particular tiltable, in particular with two degrees of freedom of tilting in each case. The facets of the first facet mirror are switchable in particular between different positions. In different switching positions they are assigned to different second facets from among the latter. At least one switching position of the first facets can in each case also be provided in which the illumination radiation 5 impinging on them does not contribute to the illumination of the object field 11.sub.i. The facets of the first facet mirror can be embodied as virtual facets. This should be understood to mean that they are formed by a variable grouping of a plurality of individual mirrors, in particular a plurality of micromirrors. For details, reference should be made to WO 2009/100856 A1, which is hereby incorporated in the present application as part thereof.

(51) The facets of the second facet mirror can correspondingly be embodied as virtual facets. They can also correspondingly be embodied such that they are displaceable, in particular tiltable.

(52) Via the second facet mirror and, if appropriate, via a downstream transfer optical unit (not illustrated in the figures), which includes three EUV mirrors, for example, the first facets are imaged into the object field 11.sub.i in the reticle or object plane 21.

(53) The individual illumination channels lead to the illumination of the object field 11.sub.i at specific illumination angles. The totality of the illumination channels thus leads to an illumination angle distribution of the illumination of the object field 11.sub.i by the illumination optical unit 17.sub.i. The illumination angle distribution is also referred to as illumination setting.

(54) In a further embodiment of the illumination optical unit 17.sub.i, in particular given a suitable position of the entrance pupil of the projection optical unit 14.sub.i, it is also possible to dispense with the mirrors of the transfer optical unit upstream of the object field 11.sub.i, which leads to a corresponding increase in transmission for the used radiation beam.

(55) The reticle 22.sub.i having structures that are reflective to the illumination radiation 5 is arranged in the object plane 21 in the region of the object field 11.sub.i.

(56) The projection optical unit 14.sub.i in each case images the object field 11.sub.i into the image field 23.sub.i in the image plane 24. The wafer 25.sub.i is arranged in the image plane 24 during the projection exposure. The wafer 25.sub.i has a light-sensitive coating that is exposed during the projection exposure via the projection exposure system 1.

(57) One advantageous embodiment of the illumination system 19 is described below.

(58) It has been recognized that a free electron laser (FEL) or a synchrotron-based radiation source can advantageously be used as the main radiation source 4. An FEL scales very well, that is to say that it can be operated particularly economically in particular if it is designed to be large enough to supply a plurality of scanners 3.sub.i with illumination radiation 5. The FEL can supply in particular up to eight, ten, twelve or even twenty scanners with illumination radiation 5.

(59) On the other hand, it may be advantageous to provide compact and thus more cost-effective FELs that each pass illumination radiation just to a single scanner. This holds true in particular if just single scanners are installed in the EUVL factories. This is the application principally to which the storage-ring-based FELs are directed which are the subject matter of this disclosure without being restricted thereto.

(60) It is also possible for more than one radiation source 4 to be provided.

(61) A desirable property of the projection exposure system 1 is that the radiation intensity that reaches the individual reticles 22.sub.i and in particular the radiation dose that reaches the wafers 25.sub.i can be regulated very exactly and very rapidly. The radiation dose that reaches the wafers 25.sub.i is intended to be able to be kept as constant as possible, in particular.

(62) Fluctuations of the illumination radiation 5 impinging on the reticle 22.sub.i, in particular of the total intensity of the illumination radiation 5 impinging on the reticles 22.sub.i, and thus of the radiation dose impinging on the wafers 25.sub.i can be attributable to intensity fluctuations of the main radiation source and/or to geometric fluctuations, in particular to fluctuations of the direction of the raw beam 6 emitted by the main radiation source 4 and/or fluctuations of the cross-sectional profile, in particular in the region of the output coupling optical unit 9, of the raw beam. Fluctuations of the cross-sectional profile can be attributable in particular to divergence fluctuations of the raw beam 6 emitted by the radiation source 4 and/or of the collective output beam 8.

(63) Details of the radiation source module 2, in particular of the radiation source 4, are described below with reference to FIG. 3. The radiation source 4 includes the free electron laser 35 (FEL). The general construction of the compact FEL 35 is known. As a representative in this regard reference is made to the publications of Lyncean Technologies Inc. Michael Feser, https://www.euvlitho.com/2017/P17.pdf and Michael Feser et al., Proc SPIE Vol 10450 1045011-2 (2017). These publications also reveal the importance of the constituent parts of the FEL 35 that are only illustrated schematically in FIG. 3.

(64) The FEL 35 emits the illumination radiation 5. The FEL 35 emits, in particular, illumination radiation 5 having a wavelength of at most 30 nm, in particular having a wavelength in accordance with the description above.

(65) In addition, the radiation source 4 includes a device 36 for feeding back illumination radiation 5 to the FEL 35.

(66) The device 36 includes four mirrors M1, M2, M3 and M4 in the order of the beam path of the illumination radiation 5.

(67) The mirrors M1 to M4 are preferably arranged symmetrically with respect to a center plane 40.

(68) The mirrors M1 and M4 are grazing incidence mirrors (GI mirrors). Illumination radiation 5 impinges on them at an angle of incidence g (grazing angle) of approximately 6°.

(69) The mirrors M2 and M3 are normal incidence mirrors (NI mirrors).

(70) The angle of incidence n is, in particular, approximately 6°.

(71) A diffractive optical element, in particular in the form of a grating structure 41, is arranged on the first mirror M1. This can be a blazed grating, in particular. As an alternative thereto, an acousto-optical element can serve as grating structure 41. For details of such an acousto-optical element, reference should be made to DE 10 2016 217 426 A1.

(72) The mirror M1 with the grating structure 41 forms a mechanism for coupling out a part of the illumination radiation 5 from the raw beam 6 or the collective output beam 8. Provision is made, in particular, for guiding only one specific order of diffraction 42 of the illumination radiation 5 diffracted at the grating structure 41 to the mirror M2, while all other orders of diffraction are passed on to one or more of the scanners 3.sub.i.

(73) The mirror with the grating structure 41 can be regarded in particular as part of the beam shaping optical unit 7 and of the output coupling optical unit 9. It can form in particular a part of a combined beam shaping and output coupling optical unit.

(74) Preferably, the zero order of diffraction 42.sub.0 is guided to the mirror M2. The first order of diffraction 42.sub.+1 and the −1st order of diffraction 42.sub.−1 are guided to two of the scanners 3.sub.i, 3.sub.j. Alternatively, the higher orders of diffraction can be collected again by a suitable optical unit and be fed to a single scanner.

(75) Using suitable blazing of the grating structure 41, the reflected power can be concentrated in a few orders of diffraction, preferably in two orders of diffraction.

(76) The mirror M2 guides the coupled-out part of the illumination radiation 5, in particular the zero order of diffraction 42.sub.0, to the third mirror M3.

(77) The third mirror M3 passes the coupled-out illumination radiation 5 on to the fourth mirror M4. From there the illumination radiation 5 is coupled into the FEL 35 again in the circulation direction of the electron beam.

(78) The direction in which the raw beam 6 leaves the FEL 35 is referred to as the forward direction 43. The direction perpendicular thereto is referred to as the transverse direction 44. These directions are depicted schematically in FIG. 3.

(79) The mirror M1 is arranged at a distance of approximately 10 m from the output of the FEL 35 in the forward direction 43.

(80) The mirror M2 is at a distance of likewise approximately 10 m from the mirror M1 in the forward direction 43. The distance between the mirrors M1 and M2 in the transverse direction 44 is approximately 2 m.

(81) The distance between the mirrors M2 and M3 in the forward direction is approximately −52 m.

(82) The mirror M1 is superpolished. It has, in particular, an EUV-compatible figure error and an EUV-compatible roughness. The figure error of the mirror M1 is—at a wavelength of 13.5 nm—at most 2.5 nm rms, and the roughness is at most 1 nm rms. The mirror M4, apart from the grating structure 41, is constructed substantially identically to the mirror M1.

(83) The mirrors M2 and M3 have—at a wavelength of 13.5 nm—a figure error of at most 0.25 nm rms.

(84) The permissible figure errors typically scale with the wavelength, and the permissible roughnesses scale with the square of the wavelengths.

(85) All of the mirrors M1, M2, M3 and M4 can be coated in order to achieve the highest possible reflectivity. The NI mirrors M2 and M3 have a reflectivity of at least 60%, preferably 70%, at a wavelength of 13.5 nm.

(86) The GI mirrors M1 and M4 can have a coating, in particular a ruthenium coating. The reflectivity of the NI mirrors M1 and M4 at a wavelength of 13.5 nm can be increased to 94% as a result.

(87) The material and achievable reflectivity of the coatings are dependent on the exposure wavelength. By way of example, Mo/Si-based multilayer structures are used at 13.5 nm, while La/B-based multilayer structures are more readily used at 6.8 nm.

(88) The abovementioned indications conserving the roughness and the figure error of the mirrors relate to illumination radiation having a wavelength of 13.5 nm. In the case of illumination radiation having a different wavelength, for example of 6.8 nm, the values may deviate from those mentioned above. The permissible grazing angles are also dependent on the wavelength of the illumination radiation. They likewise decrease as the wavelength becomes shorter.

(89) Upon impinging on the first mirror M1, the illumination radiation 5 has a beam diameter of approximately 2 mm. Given a grazing angle of 0.1 rad=5.7°, the beam on the mirror M1 is expanded to approximately 20 mm in the forward direction 43.

(90) The beam diameter on the mirror M2 is approximately 50 mm. The thermal load per unit area is considerably reduced as a result.

(91) M1 can be embodied as a convex, to a first approximation off-axis paraboloidal mirror. It can also be embodied as an ellipsoid, in particular with the beam waist at a focal point, or as a hyperboloid or as a freeform surface. The freeform surface can be approximated by toroids, in particular.

(92) The grating structure 41 includes grating lines, which can be oriented either normal to the beam direction or in the beam direction. In particular, a conical grating having lines in the beam direction can serve as the grating structure 41.

(93) With the aid of the grating structure, a portion of the illumination radiation 5 that is appropriate to the seed line is coupled out into the zero order 42.sub.0, which forms the used order in this example. The remaining orders 42.sub.i, |i|≥1, are passed on to the scanners 3.sub.i.

(94) As already mentioned, the grating structure 41 can be embodied as a dynamic grating. This enables the portion of the coupled-out illumination radiation to be controlled, in particular by closed-loop control.

(95) In order that the orders of diffraction 42.sub.i, |i|≥1, which are not used for seeding can be passed on without obscuration, two adjacent orders at the mirror M2 have to be separated from one another by at least the beam diameter. This can be achieved—at wavelength of 13.5 nm—if the grating structure 41 has approximately 38 lines per millimeter. M2 and M3 are preferably designed as concave mirrors. They can be embodied to a first approximation as off-axis paraboloidal mirrors. It is thereby possible to generate a parallel beam 45 in the region between M2 and M3. The beam 45 has a diameter d of approximately 5 cm.

(96) The mirror M3 receives the beam 45 and focuses it onto the mirror M4.

(97) All of the mirrors M1, M2, M3 and M4 are embodied as multilayer mirrors having a multilayer structure.

(98) For a seeding power of 50 W, an output power of the FEL 35 of 1179 W is used with the feedback device 36 described above. The maximum thermal load on the components of the device 36 is less than 180 W/cm.sup.2 in this case. It arises at the mirror M1. The thermal load can be further reduced by reducing the grazing angle g and/or by increasing the distance between the mirror M1 and the output of the FEL 35.

(99) Preferably, the mirror M1 is produced from materials having a high thermal loading capacity, in particular thermally conductive materials. The mirror M1 can be produced in particular from silicon carbide, silicon, copper, ruthenium, aluminum or diamond. A solid ruthenium mirror can also serve as the mirror M1. A cooling unit (not illustrated in the figures) can be provided for cooling the mirror M1.

(100) The feedback device 36 is embodied in such a way that the seed pulse in the undulator passes parallel to the electron beam of the FEL 35. The undesired generation of high-energy x-ray radiation as a result of coherent inverse Compton scattering of light and electron radiation passing antiparallel is avoided as a result.

(101) Using an accurate adaptation of the distances between the mirrors M1, M2, M3 and M4 or via an adaptation of the propagation time of the illumination radiation 5 in the feedback loop, it is possible to achieve a synchronization with the pulses circulating in the FEL 35.

(102) Further details of the device 36 and of the operation of the radiation source 4 having the device 36 are described as a brief outline below.

(103) The pulse coupled into the FEL 35 again via the device 36 is matched to the laser mode. In terms of its lateral intensity profile, in particular, the pulse is identical to the pulse in the FEL 35.

(104) A controllable grating structure 41, for example with the aid of an acousto-optical element, enables variable power feedback.

(105) Provision can be made for embodying the radiation source 4 in such a way that the FEL 35 can be switched off during operation. This can be done by suppressing the diffraction efficiency into the order of diffraction used for “seeding”, in particular into the zero order of diffraction. This can be done for example by switching off the control voltage at the acousto-optical element. This can be achieved in the case of a static grating by displacing or totally removing the grating in or from the beam path. By influencing the amplitude of the grating, it is possible to directly influence the diffraction efficiencies.

(106) By influencing the grating period of the e.g. acousto-optical element, it is possible to control diffraction angles and powers coupled in as a result of overexposure losses at the downstream mirrors and mode mismatch, and the FEL power.

(107) With these measures, on the basis of suitable feedback or feedforward information, it is then possible to realize e.g. dose control at the reticle or wafer level.

(108) The radiation source 4 in accordance with the description above can also be used for a metrology system instead of the projection exposure system 1.