METHOD FOR PRODUCTION OF QUANTUM RODS USING FLOW REACTOR
20220089949 · 2022-03-24
Inventors
- Maksym F. Prodanov (Hong Kong, CN)
- Valerii Vladimirovich VASHCHENKO (Hong Kong, CN)
- Abhishek Kumar Srivastava (Hong Kong, HK)
Cpc classification
B01J19/0093
PERFORMING OPERATIONS; TRANSPORTING
B82Y20/00
PERFORMING OPERATIONS; TRANSPORTING
B01J19/248
PERFORMING OPERATIONS; TRANSPORTING
B82Y40/00
PERFORMING OPERATIONS; TRANSPORTING
B01J2219/00076
PERFORMING OPERATIONS; TRANSPORTING
B01J2219/00783
PERFORMING OPERATIONS; TRANSPORTING
B01J2219/00186
PERFORMING OPERATIONS; TRANSPORTING
B82Y30/00
PERFORMING OPERATIONS; TRANSPORTING
B01J19/0013
PERFORMING OPERATIONS; TRANSPORTING
International classification
C09K11/88
CHEMISTRY; METALLURGY
B01J19/00
PERFORMING OPERATIONS; TRANSPORTING
Abstract
A method for production of quantum rods is semiconductor luminescent nanoparticles of elongated shape. The semiconductor luminescent nanoparticles are core-shell nanoparticles, where core is CdSe coated with CdS shell. At the current state of the art, mass production of this type of quantum rods is challenging because of extremely fast growth of wurtzite CdSe seeds serving as the core, especially when the seeds size is below 3.0 nm that is required for synthesis of green emitting QRs. We propose the non-injection method for CdSe-seeds which comprises: preparation of single reaction mixture containing both Cd- and Se-precursors, which is liquid at room temperature: pumping the reaction mixture through the heating zone specially designed to provide highly reproducible and well-controllable residential time (0.1-60 seconds) in a heating chamber, thereby resulting in CdSe seeds with low size distribution and narrow emission bandwidth; synthesis of quantum rods using the prepared CdSe seeds.
Claims
1. A method for synthesis of semiconductor luminescent nanorods CdSe/Cd.sub.xZn.sub.(1-x)Se.sub.yS.sub.(1-y) comprising: preparing single reaction mixture containing cadmium organophosphonate and Se-precursor, which is homogeneous liquid at room temperature; pumping the said reaction mixture through the flow reactor heating zone to synthesize CdSe seeds of wurtzite crystal type with controllable emission wavelength, low size distribution, and narrow full width at half maximum of emission band; synthesizing semiconductor luminescent nanorods from the said CdSe seeds.
2. The method of claim 1, wherein to homogeneously dissolve the Cd- and Se-precursors, the mixture of trialkylphosphineoxides of general formulae RR.sup./R.sup.//PO is used as a solvent, where R, R.sup./ and R.sup.// are independently alkyl groups C.sub.nH.sub.2n+1 with n being in the range of 1 to 30; or wherein R is a branched alkyl or alkenyl group or a branched carbon chain of total length in the range of 4 to 22 carbon atoms comprising one or more double bonds.
3. The method of claim 1, wherein the cadmium organophosphonate is alkyl- or alkenylphosphonates, where alkyl group is linear or branched C.sub.nH.sub.2n+1 group with n being in the range of 3 to 30; or alkenyl group is linear or a branched carbon chain of total length in the range of 3 to 22 carbon atoms comprising one or more double bonds.
4. The method of claim 1, wherein the Se-precursor is obtained by dissolving the elemental Se in the trialkylphosphine of general formulae RR.sup./R.sup.//P, where R, R.sup./ and R.sup.// are independently alkyl groups C.sub.nH.sub.2n+1 with n being in the range of 1 to 30; or wherein R is a branched alkyl or alkenyl group or a branched carbon chain of total length in the range of 4 to 22 carbon atoms comprising one or more double bonds.
5. The method of claim 1, wherein the pumping of reaction mixture is performed by pulse-less high-pressure piston pump equipped with valves, with controllable flow rate.
6. The method of claim 5, wherein the pump provides the maximum flow rate no less than 10 ml/min at maximum backpressure no less than 10 bar and with accuracy of the flow rate no worth than 2%.
7. The method of claim 1, wherein emission wavelength of CdSe seeds is in the range of 480-620 nm and FWHM of emission band is less than 35 nm;
8. The method of claim 1, wherein the flow reactor comprises sequentially connected units with continuous flow channel, where at least one of the units is capable to heat the reaction mixture to 400° C. and at least one of the following unit is cooling unit.
9. The method of claim 8, wherein at least one of the flow reactor units in hot zone is a chamber with inlet and outlet ports, and tightly packed with inert filler.
10. The method of claim 9, wherein the inert filler is microparticles made of corrosive resistant metals or their alloy, or alumina, or silica, or silicon carbide, or graphite, or diamond.
11. The method of claim 10, wherein the inert filler is a non-porous material.
12. The method of claim 9, wherein the inert filler is made of good thermal conductive metal, plated with thin layer of chemically inert metal.
13. The method of claim 12, wherein the good thermal conductive metal is copper and chemically inert metal is nickel or its alloy.
14. The method of claim 8, wherein at least one of the flow reactor units in hot zone comprises metal block with continuous empty microchannel inside; the empty microchannel is connected with inlet and outlet ports.
15. The method of claim 8, wherein the metal block is made of corrosive resistant metals or their alloy.
16. The method of claim 15, wherein the corrosive resistant metals is chosen from one of the following: nickel, stainless steel, niobium, molybdenum, titanium or of their alloy.
17. The method of claim 14, wherein the metal block is made of good heat-transfer metal and the surface of the microchannel inside of the metal block is plated with thin layer of corrosive resistant metals or their alloy.
18. The method of claim 17, wherein the good heat-transfer metal is cooper and the corrosive resistant metal is nickel or its alloy.
19. The method of claim 14, wherein a continuous microchannel inside the metal block is made by 3D metal printing technique.
20. The method of claim 19, wherein microchannel includes coaxially displaced plurality of micro-plates or micro-helical inserts, which sequentially have left- or right-hand helicity thereby providing alternative radial twisting of the flow.
21. The method of claim 14, wherein a continuous empty microchannel inside the metal block is made on the top surface of one substrate and then hermetically covered with another substrate.
22. The method of claim 14, wherein a continuous empty microchannel has a zigzag periodical patterning.
23. The method of claim 14, wherein a continuous empty microchannel is a periodical plurality of divergent and convergent micro channels.
24. The method of claim 1, wherein the flow rate is controlled in the range from 0.1 to 1000 ml/min.
25. The method of claim 1, wherein the time of reaction mixture residence in the hot zone is controlled by the flow rate in the range from 0.1 to 60 s.
26. The method of claim 1, wherein semiconductor luminescent nanorods CdSe/Cd.sub.xZn.sub.(1-x)Se.sub.yS.sub.(1-y) are synthesized in flow from the CdSe seeds of wurtzite crystal type without intermediate purification of the CdSe seeds.
27. The method of claim 1, wherein the as prepared CdSe seeds are purified from the reaction mixture prior the synthesis of semiconductor luminescent nanorods.
28. The method of claim 1, wherein the semiconductor luminescent nanorods are synthesized in a flow reactor.
29. The method of claim 1 wherein the semiconductor luminescent nanorods are synthesized in a batch reactor.
30. A flow reactor for synthesis of semiconductor CdSe seeds according to claim 8, wherein the cooling unit is provided for flash cooling (rapid cooling) of the reaction mixture. Cooling is used to stop the growth of CdSe seeds.
31. A reaction system for synthesizing semiconductor CdSe seeds according to claim 8, wherein flow reactor after cooling unit further includes with the detection system comprises a fluorescence detector, the fluorescence detector is used for in-situ monitoring and rapid feedback of the process to adjust the flow rate or temperature in the hot zone.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0045] A full and enabling disclosure to one of ordinary skill in the art is set forth more particularly in the remainder of the specification, including reference to the accompanying figures, in which:
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DETAILED DESCRIPTION
[0058] Reference now will be made in detail to embodiments of the invention, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation of the invention, not limitation of the invention. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention. For instance, features illustrated or described as part of one embodiment can be used with another embodiment to yield a still further embodiment. Thus, it is intended that the present invention covers such modifications and variations as come within the scope of the appended claims and their equivalents.
[0059] General Introduction
[0060] CdSe/CdS core-shell quantum rods (QRs) are semiconductor nanoparticles of elongated shape with additional advantages over quantum dots (QDs), namely: linearly polarized emission, lower PL quenching in the film and higher thermal stability. Particularly, parallel aligned QRs in films are used as enhancement films (EF) for display backlight applications in liquid crystalline displays (LCDs) and are competitive alternative materials to replace quantum dot enhancement films (QDEFs) which are used in current state of the art. Due to polarized emission, the QRs, which are mainly concerned to core-shell CdSe/CdS nanorods, can increase the colour gamut of LCDs and improve considerably their overall optical efficiency. These advantageous of QRs are also in high demand for application in LEDs either as on-chip light convertors or as utilizing electroluminescent effect.
[0061] For display applications QRs with λ.sub.em=620-630 nm and λ.sub.em=520-525 nm and are required for red and green colours. In order to provide colour purity and expand colour triangle, the width of emission band of the QRs (FWHM) should not exceeded 35 nm, preferably 25-30 nm.
[0062] The core-shell QRs are currently obtained by two-steps procedure, where first step is synthesis of the CdSe seeds, further used as a core, and second step is growing the rod-shaped CdS shell coating the CdSe core.
[0063] The first step is the most challenging because of extremely fast growth of wurtzite CdSe (w-CdSe) seeds, especially when the particle size is below 3.0 nm that is required for synthesis of high-quality of green emitting QRs. An essential red shift during the following CdS shell growth additionally aggravates the problem compelling to reduce the size of the seeds to as small as 2 nm. where the required reaction time is shortened to few seconds. Such synthetic requirements are well-beyond of capability of the batch reactor synthesis using both hot-injection or non-injection methods, where it is almost impossible to cool down the reaction mixture from 370° C. to below 200° C. in few seconds, especially in the case of large-scale synthesis.
[0064] Methods based on dilution of reaction solutions or use of less reactive element precursors cannot result in formation of rod-like nanoparticles as both concentration and reactivity are key prerequisites for shape control during anisotropic growth. Any options to achieve better control on the reaction time of w-CdSe seeds synthesis by decreasing the temperature of reaction, are not applicable to high-quality w-CdSe of small size, since a lower temperature always favours to formation of smaller number of initial CdSe nuclei, whereas the further growing rate of CdSe over the nuclei weakly depends on temperature. Thus, instead of smaller-sized CdSe, the nanoparticles of larger size forms. Additionally, at lower temperature the CdSe nanoparticles of worse crystallinity are obtained, which deteriorates the luminescent properties of the following CdSe/CdS rods. Moreover, at lower temperature CdSe nanocrystals with cubic lattice type (zinc blende) forms as this crystal type is kinetically more preferable. Special techniques of fast reaction cooling, for example either by dipping of reaction vessel to cold acetone and/or 2-propanole bath or by injection of a cold solvent into reaction mixture, also do not allow to control the cooling rate reproducibly even in low-scale synthesis (of few tens of mL of reaction mixture) and is not applicable when scaling up the synthesis.
[0065] Here, we propose the non-injection method which comprises: a) preparation of single reaction mixture containing both Cd- and Se-precrursors, which is liquid at room temperature; b) pumping the reaction mixture through the heating zone specially designed to provide extremely small (0.1-60 seconds) residential time in a heating chamber in a highly reproducible and controllable manner, thereby synthesizing CdSe seeds with low size distribution and narrow emission bandwidth; c) synthesis of quantum rods using the prepared CdSe seeds. The independent precise control of reaction time and temperature including “flash” heat-up and cool-down of the reaction mixture entering and exiting the heating zone correspondingly, enables a boosted nucleation and homogeneous growth of the nanoparticles. Quantum rods with a very well reproducible PL properties including high photoluminescence quantum yield and narrow emission bandwidth can be obtained by the proposed method.
[0066] Solution delivery block includes: [0067] one piston-type pump providing max. flow rate >150 ml/min at pressure >275 bar (e.g. HPLC Pump) with built-in pressure sensor, [0068] two reservoirs with Solvent (TRPO) and Cd/Se precursors solution (in TRPO) equipped with inlet/outlet tubes for inert gas (N.sub.2 or He) and stored under the blanket of an inert gas. The delivering solutions should be degassed, e.g. by immersing of both reservoirs into ultrasonic bath. Each of reservoirs is connected with Pump through the switching Valve 1 providing delivery of the liquid from only one of them.
[0069] Hot zone includes several sequential chambers (at least two) allowing to maintain different temperatures in each of them. Each chamber includes metal blocks with heaters and flow path, temperature sensors and temperature control unit. The range of available temperatures is from r.t. to 450° C. with accuracy not worth than ±1.0° C.
[0070] Cooler is a metal-made heat exchanger, where outlet tubing from the last hot zone immersed into jacket with circulated coolant (water or another appropriate cooling liquid). The temperature of coolant can be varied at least from +5° C. to room temperature.
[0071] Online detector is fluorescence flow detector. It can be composed of flow-cell, excitation light source and spectrometer. [0072] Flow cell should be of pressure-resistant (up to 150 bar) type with short optical path cell (<1 mm) enabling detection of the fluorescence in high-concentrated solutions; [0073] Excitation light source is a LED of at least 1 W power and emitting narrow band light (<10 nm FWHM) in the range of 360-420 nm; [0074] Spectrometer, e.g. fibre-optical spectrometer is Ocean Optics USB 2000+ or similar one, enabling online recording the spectra every 0.5 s within the range at least 400-800 nm with resolution 1-2 nm and sensitivity not less than 30 photons/count.
[0075] Product collector consists of two reservoirs, Product and Waste, connected with two valves 2 and 3. Valve 2 allows redirecting the flow either to Product reservoir or to the inlet of Valve 3. Valve 3 allows redirecting the flow either to Waste or back to Solvent vessel for its recycling.
[0076] Optionally, the HPLC pump, temperature controllers, on-line detectors and all valves (in motorized design) can be connected to a PC and integrated in one computer controllable system.
[0077] Here, for synthesis of CdSe seeds with the quality appropriate for the further preparation of QRs, we propose special design of heating chamber, which combines high thermal conductivity (fast homogeneous heating of the incoming flow), good mixing, and flow of liquid close to ideal plug flow regime (PFR). Several types of the heat chamber is proposed for the flow reactor to meet the needed requirements (
[0078] First type is filled column chambers, where the filler (metal spheres of micrometres size) serves both as vortex inducer of the flow and as heat transfer improvers. The column are either of round or flatted cross-section shape, the latter is preferable for better heat transfer from walls to inner volume of the flowing reactants. Similar to high performance liquid chromatography (HPLC) for similarly filled column, one can expect the PFR of the flow passing through the tube with minimized front and tail blurring. As an example of column type chamber, empty HPLC columns charged with 40-100 μm sized Ti spheres can be used (see
[0079] Other types of the heating chamber shown in
[0080] The metal is chosen from, but not limited to, the chemically resistant metal, e.g. stainless steel, nickel, titanium, or made of high-heat conductive metal, e.g. cooper, further additionally plated in wetted path with thing protective layer of chemically resistant metal, e.g. nickel.
[0081] We also show that heating chamber of conventional tube type, used in common flow systems cannot be used for synthesis of CdSe of quality as high as in a batch reactor injection approach, and therefore, it is not applicable in the QRs synthesis process. For this, we tested tube with internal diameters 1 mm in the simplest coil type chamber (
TABLE-US-00001 TABLE 1 Synthesis of QDs seeds in coil type chamber Flow rate λ.sub.max FWHM (ml/min) (nm) (nm) 4.5 625 44 6.5 605 45 8.5 579 47 10 531 58 (broadr)
[0082] The results for two tested filled columns (ID=2.0 and 4.6 mm) are shown in Error! Reference source not found.. It is clearly seen that the PL quality of the obtained NPs is much better than that for both coil- and flat-type heating chambers. Thus, the emission peak position can be easily tuned in 500-620 nm spectral range, which is enough for synthesis of high quality green and red CdSe/CdS QRs. The latter were successfully synthesized from the as obtained CdSe QDs (see Error! Reference source not found.). FWHM for these CdSe QDs and CdSe/CdS QRs are in the range of 25-40 and 32-36 nm correspondingly, which matches with the best reported values for materials obtained in a batch reactor.
TABLE-US-00002 TABLE 2 Syntheis of QDs seeds in the chamber of column type filled with Ti microspheres. Column size Flow rate T (1.sup.st zone/2.sup.nd zone/ λ.sub.max FWHM (ID/L, mm) (ml/min) 3.sup.rd zone, ° C.) (nm) (nm) 2.0/150 0.7 365/350/350 578 30 2.0/150 1 365/350/350 569 28 2.0/150 2 365/350/350 563 26 2.0/150 3 365/350/350 554 30 2.0/150 5 365/350/350 536 37 2.0/150 4.5 365/350/350 520 33 2.0/150 4 365/350/350 502 39 (br.) 2.0/150 5 365/350/350 491 br. 4.6/75 1.5 400/320/320 612 34 4.6/75 2 400/320/320 600 32 4.6/75 2.5 400/320/320 583 34 4.6/75 3 400/320/320 573 32 4.6/75 3.5 400/320/320 550 32 4.6/75 4 400/320/320 539 36 4.6/75 4.5 400/320/320 526 36
DETAILED EXAMPLES
Example 1
Preparation of Cd-Precursor
[0083] The mixture of CdO (3.52 g, 27.4 mmol), hexadecylphosphonic acid (15.06 g, 49.1 mmol) and TRPO (200 ml) were thoroughly degassed at reduced pressure at 130° C. for 90 min upon vigorous stirring: five cycles of pumping out and filling with inert gas (nitrogen) sequence were repeated. The mixture was then heated up to 330° C. during 1 hour and allowed to cool to r.t. This results in the obtained Cd concentration in solution 0.14 mm/g or 0.134 mol/L.
Preparation of Se-Precursor
[0084] The vessel containing Se powder (5.0 g, 64.8 mmol) was degassed by means of nitrogen purging for 20 minutes at stirring. Then, trioctylphosphine (200 ml) was added and degassing was continued by bubbling of nitrogen through the suspension at stirring. The mixture was stirred for 1 hour until full dissolution of Se. The concentration of thus obtained Se solution is 25 g/L.
Reaction Mixture for Flow Reactor
[0085] The as prepared Cd- and Se-precursors are mixed in a volume ratio 3/2 and the vessel is set into continuously working ultrasonic bath at temperature −45-55° C. under blanket of nitrogen.
Synthesis of Cyan-Emitting CdSe QDs and the Corresponding Green-Emitting CdSe/CdS Quantum Rods
[0086] The experimental setup for flow synthesis of CdSe seeds is generally shown in Error! Reference source not found. The used heating chamber is of column type filled with 40-100 μm sized Ti sphere, see
[0087] 1 L of TRPO (as a Solvent) and 500 ml of mixed [Cd] and [Se] precursor solutions (reaction mixture) were transferred into the corresponding reagent delivery reservoirs equipped with gas-tight screw cap, two inlet/outlet inert gas (N.sub.2) tubing, solvent delivery PTFE tubing capped with titanium 10 μm filter. Both solvent delivery tubes were attached to the switching Valve 1. Ultrasonic sonication of these chemicals (Solvent and Precursors) at temperature ˜45-55° C. under inert atmosphere (N.sub.2 flow rate is ˜15 ml/min) was performed for 30 minutes for their degassing. Thereafter, N.sub.2 flow was reduced to 4-5 ml/min and both these chemicals were kept under the flow of N.sub.2 for all time of their use. The pump, detector/LED source and water chiller were switched on. The Valve 1 was set to suck the Solvent (individual TRPO). The Solvent was set for the recirculation regime: the Valve 2 is switched to Valve 3, and Valve 3 is switched to be connected with Solvent reservoir. The flow rate was set to 1 ml/min on the pump. All the temperature controllers were switched on and the in all hot zones to 120° C. was set. After that, the flow rate was set to 7.5 ml/min. The temperatures were set to 365/350/350° C. for the 1.sup.st/2.sup.nd/3.sup.rd zones correspondingly. When the temperatures were stabilized the flow rate 5 m/min was set. When the temperature and pressure is stabilized (T deviation is less than 2° C. and pressure deviation is less than 50 psi), the Valve 3 was turned to connect with Waste discharge vessel and then the Valve 1 was set to position for supply of [Cd]/[Se] reaction mixture. When the PL spectra is stabilized by wavelength and intensity (˜20 s), the valve 2 was turned to collect the product. The collected solution of the product was mixed with equal amount of methanol and centrifuged at 7800 rpm for 5 min. The supernatant was discarded. The solid residue was then washed 2 times by means of dissolution in toluene, precipitation with methanol and separation on centrifuge. Finally, the product was dissolved in toluene and centrifuged to remove any insoluble material. Then, product was again precipitated from toluene solution with methanol and centrifuged. The obtained CdSe seeds precipitate was dissolved in appropriate amount of TOP to get the solution with concentration of CdSe seeds 20 g/L. In a separate flask, in 16 ml of this CdSe seeds solution the sulfur (840 mg, 26 mmol) was dissolved at with vigorous stirring and used at the next step.
[0088] CdO (900 mg, 7 mmol), hexadecylphoshonic acid (2.65 g, 8.6 mmol), hexylphosphonic acid (800 mg, 4.8 mmol) and trioctylphosphine oxide (30.0 g, 78 mmol) were thoroughly degassed at reduced pressure (10-20 mbar) at 130° C. for 90 min with vigorous stirring, followed by five cycles of pumping out and filling with inert gas (nitrogen) sequence. Then, the suspension was heated to 340° C. with vigorous stirring, after which it became transparent colorless solution. At this temperature, trioctylphosphine (10 ml) was swiftly injected. Then, the obtained above solution of CdSe seeds and S was swiftly injected to Cd-precursor solution at 375° C. The synthesis was terminated after 7 minutes by removing the heating source. When the temperature of the reaction mass decreased to 180° C., the 100 ml of toluene were added. After cooling to r.t., the product was precipitated with 50 ml of ethanol, collected by centrifugation, and washed once by re-dispersion in toluene (80 ml, 10 min of sonication) followed by precipitation with ethanol (40 ml, centrifugation). The obtained solid product was then re-dispersed in toluene (5 ml) and centrifuged at 4000 rpm for 10 min in order to remove insoluble materials. The solution was collected and filtered through a 0.2 μm PTFE filter. Then, solvent was evaporated under reduced pressure at 50° C. and dried in vacuo, the yield was 930 mg. PL spectra and TEM images of the obtained CdSe/CdS QRs are shown in Error! Reference source not found.
Example 2
Synthesis of Yellow-Emitting CdSe QDs and the Corresponding Red-Emitting CdSe/CdS Quantum Rods
[0089] Preparation of Cd-precursor and Se-precursor solutions as well as reaction mixture are essentially the same as described in Example 1. The synthesis of yellow-emitting CdSe QDs was performed using the same flow reactor and by the same procedure as described in Example 1 except of the flow rate, which was set to 0.7 ml/min. The CdSe seeds was isolated and purified similarly to Example 2, except that the Sulphur was dissolved in 12.8 ml of CdSe seeds solution in TOP (20 g/L). The further synthesis of the yellow-emitting CdSe/CdS quantum rods was performed in the same way, as in Example 2. Yield of CdSe/CdS quantum rods is 860 mg. PL spectra and TEM images of the obtained CdSe/CdS QRs are shown in Error! Reference source not found.
[0090] It should be understood that various forms of the processes shown above can be used, including reordering, adding or deleting step(s). For example, the steps described in the present disclosure can be executed in parallel, sequentially, or in a different order, as long as a desired result of the technical solution disclosed in the present disclosure can be achieved, and they are not restricted in the present disclosure.
[0091] These and other modifications and variations to the present invention may be practiced by those of ordinary skill in the art, without departing from the spirit and scope of the present invention, which is more particularly set forth in the appended claims. In addition, it should be understood that aspects of the various embodiments may be interchanged in whole or in part. Furthermore, those of ordinary skill in the art will appreciate that the foregoing description is by way of example only and is not intended to limit the invention so further described in such appended claims.