DIELECTRIC BARRIER DISCHARGE DEVICE
20220087002 ยท 2022-03-17
Assignee
Inventors
- Yosuke SATO Sato (Kawasaki Kanagawa, JP)
- Akio Ui (Suginaki Tokyo, JP)
- Masato Akita (Shinjuku Tokyo, JP)
- Shotaro Oka (Tokyo, JP)
Cpc classification
H05H1/2406
ELECTRICITY
International classification
Abstract
A dielectric barrier discharge device in an embodiment includes: a dielectric having a hollow-shaped flow path; a first electrode and a second electrode provided apart along the dielectric so as to cause a first region in which plasma is formed inside the flow path; and a power supply to apply a voltage between the first electrode and the second electrode. The dielectric includes a flow path area adjusting portion provided to project from an inner wall of the dielectric toward a center of the flow path in a manner that a first flow path cross-sectional area in the first region is smaller than a second flow path cross-sectional area in a second region other than the first region in the flow path.
Claims
1. A dielectric barrier discharge device, comprising: a dielectric having a hollow-shaped flow path; a first electrode and a second electrode provided apart along the dielectric so as to cause a first region in which plasma is formed inside the flow path; and a power supply to apply a voltage between the first electrode and the second electrode, wherein the dielectric includes a flow path area adjusting portion provided to project from an inner wall of the dielectric toward a center of the flow path in a manner that a first flow path cross-sectional area in the first region is smaller than a second flow path cross-sectional area in a second region other than the first region in the flow path.
2. The device according to claim 1, wherein the first flow path cross-sectional area of the flow path is in a range of 30% or more and 90% or less of the second flow path cross-sectional area.
3. The device according to claim 1, wherein the first flow path cross-sectional area of the flow path is in a range of 60% or more and 90% or less of the second flow path cross-sectional area.
4. The device according to claim 1, wherein the dielectric has the flow path whose cross section is approximately circular.
5. The device according to claim 1, wherein the flow path area adjusting portion includes a projecting portion made by the inner wall of the dielectric being deformed toward the center.
6. The device according to claim 1, wherein the flow path area adjusting portion includes a projecting portion containing a dielectric material adhering to the inner wall of the dielectric toward the center.
7. The device according to claim 6, wherein the dielectric contains a first dielectric material, and the projecting portion contains a second dielectric material different from the first dielectric material.
8. The device according to claim 1, wherein the flow path area adjusting portion includes a projecting portion having an approximately hemispherical shape in cross section or an approximately semielliptical shape in cross section.
9. The device according to claim 1, wherein the flow path area adjusting portion includes a projecting portion having an approximately triangular shape in cross section.
10. The device according to claim 1, wherein at least one of the first electrode and the second electrode is provided along an outer wall of the dielectric.
11. The device according to claim 10, wherein at least one of the first electrode and the second electrode is covered with a dielectric material.
12. The device according to claim 1, wherein at least one of the first electrode and the second electrode is provided along the inner wall of the dielectric, and at least one of the first electrode and the second electrode that are provided along the inner wall of the dielectric is covered with a dielectric material.
13. The device according to claim 1, further comprising: a turbulence-generating member installed in the first region or an upstream region of the first region inside the flow path in a manner that a flow of a gas to be circulated inside the flow path is disturbed.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION
[0020] A dielectric barrier discharge device in an embodiment includes: a dielectric having a hollow-shaped flow path; a first electrode and a second electrode provided apart along the dielectric so as to cause a first region in which plasma is formed inside the flow path; and a power supply to apply a voltage between the first electrode and the second electrode, in which the dielectric includes a flow path area adjusting portion provided to project from an inner wall of the dielectric toward a center of the flow path in a manner that a first flow path cross-sectional area in the first region is smaller than a second flow path cross-sectional area in a second region other than the first region.
[0021] Hereinafter, a dielectric barrier discharge device in an embodiment will be explained with reference to the drawings. In each embodiment, substantially the same constituent parts are denoted by the same reference numerals and symbols and their explanations will be partly omitted in some cases. The drawings are schematic, and a relation of thickness and planar dimension among parts, a thickness ratio among parts, and so on are sometimes different from actual ones. Ten is indicating up and down directions in the explanation are sometimes different from actual directions based on a gravitational acceleration direction.
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[0023] In the dielectric barrier discharge electrode 2, the dielectric 4 has a hollow-shaped flow path 8. The shape of the hollow-shaped dielectric 4 is not limited in particular, but a cylindrical shape is common, for example, as illustrated in a cross section of the flow path 8 in
[0024] The inner dimension of the flow path 8 of the dielectric 4, for example, the inside diameter (diameter) of the flow path 8 having a circular cross-sectional shape is preferably 0.5 mm or more and 20 mm or less, and typically about 5 mm or more and 10 mm or less. When the inside diameter of the flow path 8 is too large, the distribution of the plasma formed is likely to be nonuniform and the voltage required to generate the discharge becomes high. When the inside diameter of the flow path 8 is too small, there is caused a problem that a gas will have difficulty in flowing. In the hollow-shaped flow path 8 of the dielectric 4, a gas to be processed, a reactive gas, or the like according to plasma processing is circulated in the z direction. For the dielectric 4, there are used, for example, glass materials such as alkali-free glass and borosilicate glass, ceramic materials such as alumina ceramics and silicon nitride ceramics, resin materials such as epoxy resin, polyether resin, and polyimide resin, and so on.
[0025] The first electrode 5 and the second electrode 6 are arranged along an outer wall 4a of the dielectric 4 as illustrated in
[0026] A gap (distance) between the first electrode 5 and the second electrode 6 is preferably about 5 mm to several tens of millimeters. As the gap is larger to some extent, a plasma region (the first region 9) can be made wider. The gap is also related to the ease of discharge, and if the gap is too large, a higher voltage is required in order to generate the discharge, or the uniformity decreases in some cases. The gap is typically about 10 mm or more and 20 mm or less. An alternating-current waveform or a pulse waveform is used as the waveform of the voltage to be applied to the first and second electrodes 5, 6. As for the frequency of the alternating current, frequencies from several Hz to several GHz can be used. The typical frequency of the alternating current is from several kHz to several MHz, and microwaves in the order of GHz can also be used. A commercial power supply frequency (50 or 60 Hz) can also be used. A pulse waveform with a rise time of several nanoseconds to several hundred microseconds can be used as the pulse waveform.
[0027] The first electrode 5 and the second electrode 6 are preferably covered with a dielectric material 10 as illustrated in
[0028] Inside the flow path 8 of the dielectric 4, a gas to be processed, a reactive gas, or the like is circulated according to plasma processing. For example, in the case where toxic components, odor components, or the like contained in a gas are processed, the gas to be processed containing such components is circulated inside the flow path 8. For example, in the case where a CH.sub.4 gas is made to react with an O.sub.2 gas to produce a fuel gas such as CH.sub.3OH, a reactive gas containing such a reaction component is circulated inside the flow path 8. The process in the flow path 8 is not limited in particular, and various processes using plasma are applied, and the gas corresponding to the process is circulated inside the flow path 8. A flow rate of the gas to flow inside the flow path 8 of the dielectric 4 is expected to be several slm (standard litter per minute), and is typically 1 slm or more and 5 slm or less. This flow rate can be set by considering the time required for the gas to react, the residence time, or the like. There is a large difference in the time scale between a plasma production time (several nanoseconds to several tens of microseconds) and a gas flow time (several milliseconds), and thus, these can basically be considered independently.
[0029] The process of the gas generated inside the flow path 8 of the dielectric 4 is performed by the gas passing through the plasma generated in the first region 9. In this case, if the plasma generated in the first region 9 between the first electrode 5 and the second electrode 6 is nonuniform, there is caused a risk that part of the gas does not pass through the plasma, resulting in that part of the gas passes through in an untreated state. This results in a factor of a decrease in the processing efficiency of the dielectric barrier discharge device 1. Thus, in the dielectric barrier discharge electrode 2 in the embodiment, the flow path area adjusting portion 7 is provided in the flow path 8 of the dielectric 4. The flow path area adjusting portion 7 is provided to project from the inner wall 4b of the dielectric 4 toward the center of the flow path 8 so as to make a first flow path cross-sectional area in the first region 9 smaller than a second flow path cross-sectional area in a second region 11 that is other than the first region 9. The second region 11 other than the first region 9 is flow path regions corresponding to installation positions of the first electrode 5 and the second electrode 6, and is flow path regions corresponding to an upstream side of the first electrode 5 and a downstream side of the second electrode 6.
[0030] The flow path area adjusting portion 7 includes a convex portion 12 projecting from the inner wall 4b of the dielectric 4 toward the center of the flow path 8. The convex portion 12 narrows the inside diameter of the flow path 8, thereby reducing the first flow path cross-sectional area of the first region 9. The convex portion 12 of the flow path area adjusting portion 7 is not limited to the curved projection (a hemispherical shape in cross section, semielliptical shape in cross section, or the like) as illustrated in
[0031] There is illustrated, in
[0032] As illustrated in
[0033] In order to improve the uniformity of the above-described plasma distribution, the ratio of reducing the first flow path cross-sectional area of the first region 9 is preferably set to 30% or more and 90% or less of the second flow path cross-sectional area of the second region 11, and is more preferably set to 60% or more and 90% or less.
[0034] When the first flow path cross-sectional area exceeds 90% of the second flow path cross-sectional area, the effect of uniformizing the plasma density due to the above-described reduction in the flow path cross-sectional area may not be sufficiently obtained. In the meantime, when the first flow path cross-sectional area is less than 30% of the second flow path cross-sectional area, the flow velocity in that region may increase, leading to a decrease in the residence time for the reaction. Thus, the first flow path cross-sectional area is preferably 30% or more and 90% or less of the second flow path cross-sectional area, and more preferably set to 60% or more and 90% or less.
[0035] The dielectric 4 provided with the flow path 8 having the flow path area adjusting portion 7 can be fabricated as follow, for example. For example, as illustrated in
[0036] As illustrated in
[0037] While certain embodiments of the present invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes may be made without departing from the spirit of the inventions. The inventions described in the accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.