METHOD FOR DEPOSITING A COATING

Abstract

The present invention relates to a method of depositing a coating comprising zinc oxide on a substrate; to a chemical vapour deposition precursor mixture for use in same and to a coated glass article and a photovoltaic cell prepared with a zinc oxide coating prepared using the method which comprises: providing a substrate, providing a precursor mixture comprising an alkyl zinc compound and a phosphorus source, the phosphorus source comprising a compound of formula O.sub.nP(OR).sub.3, wherein n is 0 or 1 and each R is hydrocarbyl, and delivering the precursor mixture to a surface of the substrate.

Claims

1. A method of depositing a coating comprising zinc oxide on a substrate, the method comprising, providing a substrate, providing a precursor mixture comprising an alkyl zinc compound and a phosphorus source, the phosphorus source comprising a compound of formula O.sub.nP(OR.sup.3).sub.3, wherein n is 0 or 1 and each R.sup.3 is hydrocarbyl, and delivering the precursor mixture to a surface of the substrate.

2. The method according to claim 1, wherein the precursor mixture further comprises an oxygen source.

3. The method according to claim 1, wherein the alkyl zinc compound is dialkyl zinc, preferably dialkyl zinc of formula R.sup.1R.sup.2Zn, wherein R.sup.1 and R.sup.2 are each independently selected from a substituted or unsubstituted C.sub.1-C.sub.4 alkyl or phenyl.

4. The method according to claim 3, wherein R.sup.1 and R.sup.2 are each independently selected from methyl or ethyl.

5. The method according to claim 4, wherein R.sup.1 and R.sup.2 are each methyl or each ethyl.

6. The method according to claim 1, wherein each R.sup.3 is independently selected from a substituted or unsubstituted C.sub.1-C.sub.4 alkyl.

7. The method according to claim 6, wherein each R.sup.3 is propyl, ethyl or methyl.

8. The method according to claim 2, wherein the oxygen source comprises an ester.

9. The method according to claim 8, wherein the ester is selected from one or more of methyl acetate, ethyl acetate, propyl acetate, butyl acetate, or a mixture of two or more of these esters.

10. The method according to claim 9, wherein the ester comprises t-butyl acetate.

11. The method according to claim 1, wherein the precursor mixture is a gaseous precursor mixture.

12. The method according to claim 1, wherein the method is atmospheric pressure chemical vapour deposition.

13. The method according to claim 1, wherein the substrate comprises glass.

14. The method according to claim 13, wherein the substrate comprises float glass.

15. The method according to claim 1, wherein the surface of the substrate is at a temperature in the range 300° C. to 800° C.

16. The method according to claim 15, wherein the surface of the substrate is at a temperature in the range 580° C. to 650° C.

17. The method according to claim 1, wherein the coating comprising zinc oxide is deposited on-line during the float glass production process.

18. The method according to claim 17, wherein the coating comprising zinc oxide is deposited whilst the ribbon of float glass is in the float bath.

19. A chemical vapour deposition precursor mixture comprising an alkyl zinc compound, a phosphorus source and, optionally, an ester, the phosphorus source comprising a compound of formula O.sub.nP(OR.sup.3).sub.3, wherein n is 0 or 1 and each R.sup.3 is hydrocarbyl.

20. A coated glass article, comprising: a glass substrate; a silica or tin oxide coating deposited on the glass substrate; a zinc oxide coating deposited over the coating by a method according to claim 1.

21. A photovoltaic cell comprising a coated glass article having a zinc oxide coating deposited over a fluorine doped tin oxide coating by a method according to claim 1.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The present invention will now be described further with reference to the following examples and Figures in which:

[0036] FIG. 1 shows schematically a static coater used for laboratory scale chemical vapour deposition experiments as used in the Comparative Examples and Examples according to the method of the present invention.

[0037] FIG. 2 shows a graph of the X-ray photoelectron spectroscopy (XPS) depth profile for Comparative Example E.

[0038] FIG. 3 shows a graph of the XPS depth profile for Example 6.

[0039] FIG. 4 shows XPS depth profile for Example 33.

[0040] FIGS. 5 and 6 are scanning electron micrographs illustrating the thickness ‘A1’ of the zinc oxide layer for Comparative Example E.

[0041] FIGS. 7 and 8 are scanning electron micrographs illustrating the thickness ‘A2’ of the zinc oxide layer for Example 6.

[0042] FIG. 9 is a scanning electron micrograph illustrating the thickness ‘A3’ of the zinc oxide layer in Example 33.

[0043] FIG. 10 is an x-ray photoelectron spectroscopy (XPS) depth profile for Example 74.

[0044] FIG. 11 is a scanning electron micrograph (SEM) image of Example 74, for which the thickness of the zinc oxide layer is indicated by distance ‘A4’.

[0045] FIG. 12 is an x-ray photoelectron spectroscopy (XPS) depth profile for Example 53.

[0046] FIG. 13 is a scanning electron micrograph (SEM) image of Example 53, for which the thickness of the zinc oxide layer indicated by distance ‘A5’.

[0047] FIG. 14 is an x-ray photoelectron spectroscopy (XPS) depth profile for Example 77.

[0048] FIG. 15 is a scanning electron micrograph (SEM) image of Example 77, for which the thickness of the zinc oxide layer indicated by distance ‘A6’.

[0049] FIG. 16 is an x-ray photoelectron spectroscopy (XPS) depth profile for Example 82.

[0050] FIG. 17 is an x-ray photoelectron spectroscopy (XPS) depth profile for Example 83

[0051] FIG. 18 is a schematic representation of a photovoltaic cell comprising a zinc oxide coating applied by the method of the present invention to a coated glass substrate.

DETAILED DESCRIPTION OF THE INVENTION

[0052] Referring to FIG. 1, processes for deposition of zinc oxide coatings on glass substrates in relation to the present invention were performed using a laboratory scale static coater. In the laboratory scale static coater, premixed precursors move towards the coater through a heated line 1 before reaching baffle section 2, which equalises the precursor flow before it enters the sealed coating section. The glass substrate 4 sits on a heated carbon block 3 which is heated to the desired temperature using either: heating elements (not shown) inserted inside the carbon block; or, by an induction coil (not shown) around the sealed coating section. Any unreacted precursor or by-products are then directed towards fish tail exhaust 5, and continue towards the incinerator 6. The arrows in FIG. 1 show the direction in which the gaseous mixture moves.

EXAMPLES

[0053] All experiments were carried out using a static coater as described in relation to FIG. 1. Diethyl zinc (DEZ) was used as the zinc precursor and either ethyl acetate (CH.sub.3COOCH.sub.2CH.sub.3), or t-butyl acetate (CH.sub.3COOC(CH.sub.3).sub.3) served as the oxygen source. Zinc oxide (ZnO) films (also referred to herein as layers) were obtained. Esters (including ethyl acetate (EtOAc) and t-butyl acetate (tBuOAc)) were found to be efficient oxidants for the process, speeding the reaction and producing thick films, and allowing pre-mixing in the presence of the phosphorus with alkyl zinc compounds without premature pre-reaction or excessive powder formation.

[0054] The precursors were delivered in a nitrogen carrier gas via vessels/bubblers with a total flow rate of about 12 standard litres per minute (slm) to 13 standard litres per minute (slm) (litres min.sup.−1, at standard temperature and pressure, (stp)). Delivery lines were maintained at a temperature of about 150° C. to avoid condensation.

Comparative Examples A to F and Examples 1 to 35

[0055] In the Examples and Comparative Examples, t-butyl acetate was added as oxidant. In the Comparative Examples, no triethyl phosphite was used.

[0056] The substrate for Comparative Example F and Examples 5, 7, 11 and 34 was float glass coated with a transparent conductive oxide having the film sequence: glass/tin oxide, silicon dioxide/fluorine doped tin oxide (glass/SnO.sub.2/SiO.sub.2/SnO.sub.2:F) (available from NSG). The substrate for all the other Comparative Examples and Examples was float glass having a coating of silica approximately 25 nm thick.

[0057] During deposition for each sample, the diethyl zinc (DEZ) vessel temperature (° C.) was between 67° C. and 75° C. and the DEZ carrier gas flow in litres per minute (L min.sup.−1) at standard temperature and pressure, (stp) was between 0.44 L min.sup.−1 and 0.80 L min.sup.−1. The triethyl phosphite (P(OCH.sub.2CH.sub.3).sub.3), vessel temperature (° C.) was 64° C. or 65° C. and, for the Examples, the triethyl phosphite carrier gas flow rate in litres per minute (L min.sup.−1) at standard temperature and pressure (stp) was between 0.05 L min.sup.−1 and 0.55 L min.sup.−1.

[0058] The oxidant was supplied through a syringe, and the oxidant was injected into a carrier gas having a flow rate of 5.00 L min.sup.−1 (at standard temperature and pressure (stp)).

[0059] Further details of the zinc oxide deposition for Comparative Examples A to F and Examples 1 to 35 are provided in Table 1. The molar ratios of diethyl zinc (DEZ) to triethyl phosphite, diethyl zinc (DEZ) to oxidant and triethyl phosphite to oxidant are provided in Table 2, together with approximate values for the thickness of the coated layer of zinc oxide for some of the samples.

[0060] The thickness of the deposited zinc oxide layer in the examples was determined by examining the interference reflection colour of the coating at the thickest position and estimating the thickness, assuming a refractive index of 1.8.

[0061] The Examples show that a thicker zinc oxide layer is deposited when a phosphorus source, in the form of triethyl phosphite, is added to the precursor mixture compared to the Comparative Examples without triethyl phosphite (when the DEZ amount is the same).

[0062] When the zinc precursor flow rate is approximately constant, the addition of triethyl phosphite improved the deposition efficiency and in so doing also reduced the waste particulates generated. The X-ray photoelectron spectroscopy (XPS) results (described below and illustrated in FIGS. 2 to 4) show that there was very little or no phosphorus incorporation in the layers and that the layers had a stoichiometry close to ZnO. As discussed herein, a further advantage of the use of triethyl phosphite in the precursor mixture is in reducing the amount of powder generation, and significantly increasing the stability of the precursor mixture.

[0063] In addition, as the amount of triethyl phosphite in the precursor mixture is increased, the thickness of the zinc oxide coating layer obtained also generally increases. The quantity of triethyl phosphite required to produce a thickness increase is small with an increase seen at just 2% of the DEZ concentration. When the amount of triethyl phosphite is increased to 15% of the DEZ concentration, absorption was seen in the zinc oxide coating layer, indicating that the deposition rate was high enough to enable a fully oxidised zinc oxide layer to be produced at the amount of oxidant used. The use of greater amounts of oxidant is likely to lead to a fully oxidised layer.

[0064] Some of the Examples investigated whether the underlying substrate had an influence on the zinc oxide layer (or film) growth by using a glass substrate bearing a transparent conductive coating as seen in Comparative Examples F and Examples 5, 7, 11 and 34. The thickness of the zinc oxide layer was determined by looking at the reflection colour. The data provided by the examples confirms that a similar improvement in the thickness of the zinc oxide layer is achieved by adding triethyl phosphite when a transparent conductive coated substrate is used as when using a silica coated glass substrate.

TABLE-US-00001 TABLE 1 Triethyl Example or DEZ Phosphite Triethyl Comparative Reactor Carrier DEZ Carrier Gas Phosphite Oxidant Run Example Temp Gas Flow vessel T Flow vessel T supply Time (CE) (° C.) (L/min) (° C.) (L/min) (° C.) (cm.sup.3/hr) (s) CE A 600 0.75 69.0 0.00 — 100 30 CE B 600 0.80 67.0 0.00 — 100 30 CE C 600 0.80 68.0 0.00 — 100 30 CE D 600 0.71 70.0 0.00 — 100 30 CE E 600 0.61 73.0 0.00 — 100 30  CE F* 600 0.64 72.0 0.00 — 100 30  1 600 0.60 72.0 0.05 65.0 96 30  2 600 0.60 72.0 0.05 65.0 96 30  3 600 0.64 72.0 0.06 64.0 100 30  4 600 0.80 68.0 0.06 65.0 100 30  5* 600 0.64 72.0 0.06 65.0 100 30  6 600 0.70 70.0 0.14 65.0 100 30  7* 600 0.64 72.0 0.14 65.0 100 30  8 600 0.50 75.0 0.23 65.0 85 30  9 600 0.60 71.0 0.25 65.0 85 30 10 600 0.75 69.0 0.28 65.0 100 30  11* 600 0.64 72.0 0.28 65.0 100 30 12 625 0.61 73.0 0.28 65.0 100 8 13 625 0.68 71.0 0.28 65.0 100 9 14 600 0.61 73.0 0.28 65.0 100 10 15 625 0.71 70.0 0.28 65.0 100 5 16 625 0.61 73.0 0.28 65.0 100 10 17 600 0.64 72.0 0.28 65.0 100 15 18 600 0.71 70.0 0.28 65.0 100 9 19 475 0.64 72.0 0.28 65.0 100 60 20 475 0.71 70.0 0.28 65.0 100 60 21 475 0.64 72.0 0.28 65.0 100 90 22 450 0.64 72.0 0.28 65.0 100 120 23 425 0.58 74.0 0.28 65.0 100 120 24 575 0.64 72.0 0.28 65.0 100 10 25 550 0.61 73.0 0.28 65.0 100 12 26 525 0.71 70.0 0.28 65.0 100 14 27 525 0.71 70.0 0.28 65.0 100 16 28 500 0.68 71.0 0.28 65.0 100 19 29 500 0.68 71.0 0.28 65.0 100 24 30 500 0.71 70.0 0.28 65.0 100 30 31 500 0.75 69.0 0.28 65.0 100 50 32 600 0.55 69.0 0.41 65.0 73 30 33 600 0.75 69.0 0.55 65.0 100 30  34* 600 0.64 72.0 0.55 65.0 100 30 35 600 0.44 69.0 0.64 65.0 58 30 *Substrate is float glass coated with a transparent conductive oxide

TABLE-US-00002 TABLE 2 Thickness Example or Estimate of Comparative Molar Ratio Molar Ratio Zinc Oxide Example DEZ:Triethyl Molar Ratio Triethyl Phosphite: layer (CE) Phosphite DEZ:Oxidant Oxidant (nm) CE A 0.000 2.14 0.00 350-410 CE B 0.000 2.18 0.00 260-300 CE C 0.000 2.09 0.00 430-520 CE D 0.000 2.17 0.00 205-230 CE E 0.000 2.24 0.00 160-180  CE F* 0.000 2.22 0.00 260-300  1 0.018 2.28 129.64 260-300  2 0.018 2.27 128.94 300-320  3 0.019 2.22 117.04 160-180  4 0.019 2.09 111.93 300-320  5* 0.020 2.22 111.93 350-410  6 0.046 2.20 47.97 230-260  7* 0.046 2.22 47.97 410-430  8 0.086 2.14 24.82 205-230  9 0.092 2.10 22.83 300-320 10 0.089 2.14 23.98 430-520  11* 0.093 2.22 23.98 430-520 12 0.093 2.24 23.98 — 13 0.091 2.18 23.98  70-100 14 0.093 2.24 23.98 — 15 0.091 2.17 23.98 — 16 0.093 2.24 23.98  70-100 17 0.093 2.22 23.98 160-180 18 0.091 2.17 23.98 70 19 0.093 2.22 23.98 70 20 0.091 2.17 23.98 — 21 0.093 2.22 23.98 — 22 0.093 2.22 23.98 — 23 0.094 2.26 23.98 — 24 0.093 2.22 23.98 — 25 0.093 2.24 23.98 — 26 0.091 2.17 23.98 — 27 0.091 2.17 23.98 — 28 0.091 2.18 23.98 — 29 0.091 2.18 23.98 — 30 0.091 2.17 23.98 — 31 0.089 2.14 23.98 100-130 32 0.178 2.13 11.96 180-205 33 0.175 2.14 12.21 350-410  34* 0.182 2.22 12.21 350-410 35 0.348 2.12 6.09  70-100 *Substrate is float glass coated with a transparent conductive oxide

[0065] In Table 2, the thickness of the zinc oxide layer (in nm) was estimated based on colour interference fringes seen on the substrate after deposition. Below 70 nm, layers (or films) are colourless and the thickness cannot be estimated in the same way.

Comparative Examples G to K and Examples 36 to 48

[0066] Experiments were undertaken to investigate how the oxidant affected the zinc oxide layer (or film) growth. The conditions used for these Examples and Comparative Examples were generally similar to those used for Examples 1 to 35 but using ethyl acetate as the oxidant.

[0067] The substrate for Comparative Example K and Examples 38, 41, 44 and 47 was float glass coated with a transparent conductive oxide having the sequence: glass/tin oxide, silicon dioxide/fluorine doped tin oxide (glass/SnO.sub.2/SiO.sub.2/SnO.sub.2:F) (available from NSG). The substrate for the other Comparative Examples and Examples was float glass having a coating of silica approximately 25 nm thick.

[0068] During the zinc oxide layer depositions, the diethyl zinc (DEZ) vessel temperature (° C.) was between 73° C. and 85° C., and the DEZ carrier flow in litres per minute (L min.sup.−1), at standard temperature and pressure (stp) was between 0.63 L min.sup.−1 and 1.20 L min.sup.−1. The triethyl phosphite vessel temperature (° C.) was 64° C., 65° C. or 69° C. and the triethyl phosphite carrier flow in litres per minute (L min.sup.−1), for the Examples, was between 0.11 L min.sup.−1 and 1.17 L min.sup.−1. The oxidant, ethyl acetate (CH.sub.3COOCH.sub.2CH.sub.3) was supplied through a syringe, injecting the oxidant into a carrier gas at a flow rate of 5.00 L min.sup.−1 at standard temperature and pressure (stp).

[0069] Further details of the deposition of the zinc oxide layer for Comparative Examples G to K and Examples 36 to 48 are given in Table 3. The molar ratios of DEZ to triethyl phosphite and DEZ to oxidant are given in Table 4 together with the approximate thickness of the zinc oxide coating.

[0070] The thickness was determined by examining the interference reflection colour of the zinc oxide coating at the thickest position and estimating the thickness assuming a refractive index of 1.8.

[0071] The results show an improved deposition efficiency as the amount of triethyl phosphite is increased. Even with an increased flow of ethyl acetate, the zinc oxide coatings were still slightly thinner for Examples 36 to 48, compared with the Examples using tertbutylacetate as oxidant. This indicates that ethyl acetate and tertbutylacetate may both be used as effective oxidants.

TABLE-US-00003 TABLE 3 Example or DEZ TEP Comparative Reactor Carrier DEZ Carrier TEP Oxidant Run Example Temp Gas Flow vessel T Gas Flow vessel T Amount Time (CE) (° C.) (L/min) (° C.) (L/min) (° C.) (cm.sup.3/hr) (s) CE G 600 0.65 85.0 0.00 — 200 30 CE H 600 0.85 80.0 0.00 — 200 30 CE I 600 1.00 77.0 0.00 — 200 30 CE J 600 0.95 78.0 0.00 — 200 30  CE K* 600 1.17 74.0 0.00 — 200 30 36 600 1.20 73.0 0.11 65.0 194 30 37 600 1.11 75.0 0.11 65.0 200 30  38* 600 0.85 80.0 0.11 65.0 200 30 39 600 0.75 82.0 0.12 64.0 194 30 40 600 1.05 76.0 0.28 65.0 200 30  41* 600 0.90 79.0 0.28 65.0 200 30 42 600 0.83 78.0 0.48 65.0 175 30 43 600 1.05 76.0 0.55 65.0 200 30  44* 600 0.95 78.0 0.55 65.0 200 30 45 600 0.82 76.0 0.86 65.0 155 30 46 600 1.00 77.0 1.10 65.0 200 30  47* 600 1.11 75.0 1.11 65.0 200 30 48 600 0.63 77.0 1.17 69.0 126 30 *Substrate float glass coated with a transparent conductive oxide

TABLE-US-00004 TABLE 4 Thickness Example or Estimate of Comparative Ratio Zinc Oxide Example DEZ:Triethyl Ratio Molar Ratio layer (CE) Phosphite DEZ:Oxidant TEP:Oxidant (nm) CE G 0.000 2.44 0.00 100-130 CE H 0.000 2.45 0.00 160-180 CE I 0.000 2.44 0.00 205-230 CE J 0.000 2.44 0.00 180-205  CE K* 0.000 2.43 0.00 230-260 36 0.102 2.42 23.79 300-320 37 0.099 2.43 24.52 205-230  38* 0.100 2.45 24.52 205-230 39 0.106 2.42 22.77 100-130 40 0.254 2.44 9.63 205-230  41* 0.253 2.44 9.63 230 42 0.496 2.44 4.92 160-180 43 0.498 2.44 4.90 430-520  44* 0.497 2.44 4.90 335-350 45 0.998 2.43 2.43 180-205 46 0.994 2.44 2.45 205-230  47* 1.002 2.43 2.43 205-230 48 2.000 2.44 1.22 100-130 *Substrate float glass coated with a transparent conductive oxide

[0072] In Table 4, the thickness of the zinc oxide layer was estimated based on the colour interference fringes seen on the substrate after deposition. Below 70 nm layers (or films) are colourless and thickness cannot be estimated in the same way.

[0073] X-Ray Photoelectron Spectroscopy (XPS) Analysis

[0074] X ray photoelectron spectroscopy (XPS) was performed on Example 6, Example 33 and Comparative Example E.

[0075] XPS analysis was used to confirm the stoichiometry of the zinc oxide coating layers as ZnO. Chlorine was detected throughout the depth of all three samples. The value for Comparative Example E was 0.4 atomic % and for Examples 6 and 33, the value was 1 atomic %. Phosphorus was only detected within the silica layer of the transparent conductive oxide coating for sample Example 33 at around ˜0.5 atomic %. The XPS results for the zinc oxide coating layers are shown in FIGS. 2, 3 and 4. In each of FIGS. 2, 3 and 4 the numbered curves refer to the species as indicated in Table 5, below. The numbered curves for FIGS. 10, 12, 14, 16 and 17 are also indicated in Table 5 below.

TABLE-US-00005 TABLE 5 Reference Numeral assigned in FIGS. 2, 3, 4, 10, 12, 14, 16 and 17 Assignment 10 C 1s 12 Ca 2p3 14 Mg 1s 16 Na 1s 18 O 1s 20 O 1s Scan A 21 P 2p 22 Si 2p 23 Si 2p Scan A 24 Zn 2p3 26 Cl 2p 28 P 2p

[0076] Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS)

[0077] An ION-TOF 5 Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) instrument was used to obtain a compositional positive ion depth profile for each coating. The analysis beam was Bi.sub.3+ and the sputter beam was 1 keV Cs.sup.+ with a beam current of 70.2 nA. For each sample tested, the sputter beam was rastered over a 200×200 μm area and the bismuth analysis beam was rastered over a 50×50 μm area at the centre of the sputtered region.

[0078] Only Example 33 provided a phosphorus signal response at just above the limit of detection.

[0079] Scanning Electron Microscopy (SEM)

[0080] Example 6, Example 33 and Comparative Example E were analysed by SEM.

[0081] SEM was used to confirm the thickness of the zinc oxide layer for Comparative Example E, which was measured to be 187-194 nm, as illustrated in FIG. 5 and FIG. 6.

[0082] SEM was also used to confirm the thickness of the zinc oxide layer in Example 6, which was found to be 210-221 nm, as illustrated in FIG. 7 and FIG. 8.

[0083] SEM was further used to confirm the thickness of the zinc oxide layer in Example 33, which was found to 286 nm, as shown in FIG. 9.

[0084] All 3 examples used the same amounts of diethyl zinc (DEZ) and tertbutylacetate (tBuOAc) in the precursor mixture. The only difference between the samples was the amount of triethyl phosphite used.

[0085] The results and images show that by adding a small amount of triethyl phosphite to the precursor mixture in accordance with the method of the present invention, the thickness of the zinc oxide layer deposited was increased by an amount of from 10 to 15%. In addition, it was found that by adding a larger amount of triethyl phosphite to the precursor mixture in accordance with the method of the present invention the thickness of the zinc oxide layer deposited could be increased by from 39 to 44%.

[0086] X-Ray Diffraction (XRD)

[0087] Example 6, Example 33 and Comparative Example E were analysed by XRD.

[0088] X-ray diffraction (XRD) was performed using a Bruker D8 Discover X-ray diffractometer using monochromatic Cu Kα1 and Cu Kα2 radiation of wavelengths 0.154056 and 0.154439 nm respectively, emitted with a voltage of 40 kV and a current of 40 mA in an intensity ratio of 2:1. Diffraction patterns were obtained by scanning the samples from 5 to 95° 2θ using an X'Celerator detector, allowing detection of crystalline phases in the first 1 to 10 microns of the sample surface. A scanning time of 1 hour per sample was used.

[0089] The coating in each case exhibited crystalline phases identified as zinc oxide (indexed to Zincite, ZnO, Hexagonal). Information on the XRD results is provided in Tables 6 to 9, below.

[0090] The crystallite size was approximately 9 to 18 nm (see Table 6 below). The crystallite size for Example 33 was smaller than that of the other samples. All the samples showed some preferred orientation in the (100) plane.

TABLE-US-00006 TABLE 6 Integral Integral Peak Crystallite breadth breadth position size Sample Reflection (sample) (std) (2θ) (nm) Comparative (100) 0.646 0.139 31.73 19 Example E (101) 0.608 0.138 36.21 21 (110) 0.992 0.133 56.56 13 Average — — — 18 Example 6 (100) 0.668 0.139 31.75 19 (101) 0.701 0.138 36.23 18 (110) 1.091 0.133 56.56 11 Average — — — 16 Example 33 (100) 1.066 0.139 31.66 11 (101) 1.391 0.138 36.08 8 (110) 1.445 0.133 56.43 8 Average — — — 9

[0091] In Table 6 there is provided details of the crystallite size of the zinc oxide layer for Comparative Example 5, Example 6 and Example 33.

TABLE-US-00007 TABLE 7 Pos. Rel. Int. Rel. Int. Meas. d-spacing FWHM Height Measured ICDD {hkl} (2θ) [Å] (2θ) [cts] [%] [%] I/Io (100) 31.73 2.8175 0.45 874 95.7 55.2 1.73 (101) 36.21 2.4788 0.48 913 100.0 100.0 1.00 (110) 56.56 1.6259 0.60 210 22.9 31.4 0.73

[0092] Table 7 details the peak parameters obtained by X-ray diffraction for Comparative Example E.

TABLE-US-00008 TABLE 8 Pos. Rel. Int. Rel. Int. Meas. d-spacing FWHM Height Measured ICDD {hkl} (2θ) [Å] (2θ) [cts] [%] [%] I/Io (100) 31.75 2.8164 0.49 2586 100.0 55.2 1.81 (101) 36.23 2.4776 0.64 424 16.4 100.0 0.16 (110) 56.56 1.6259 0.80 674 26.1 31.4 0.83

[0093] Table 8 details the peak parameters obtained by X-ray diffraction for Example 6.

TABLE-US-00009 TABLE 9 Pos. Rel. Int. Rel. Int. Meas. d-spacing FWHM Height Measured ICDD {hkl} (2θ) [Å] (2θ) [cts] [%] [%] I/Io (100) 31.66 2.8242 0.75 2078 100.0 55.2 1.81 (101) 36.08 2.4875 0.90 271 13.0 100.0 0.13 (110) 56.43 1.6294 1.15 629 30.3 31.4 0.96

[0094] Table 9 details the peak parameters obtained by X-ray diffraction for Example 33.

[0095] Experiments to Evaluate Alternative Phosphorus Sources.

[0096] Different phosphorus sources were investigated in the method of the present invention. The derivatives explored were: trimethyl phosphite (TMP), triisopropyl phosphite (TIP) and triethyl phosphate (TEPa). The different phosphorus containing precursors are illustrated in Table 10.

TABLE-US-00010 TABLE 10 PHOSPHORUS PRECURSOR STRUCTURE Triethyl Phosphite [00001] Trimethyl Phosphite [00002] Triisopropyl Phosphite [00003] Triethyl Phosphate [00004]

[0097] Experiments were conducted again using a static coater as described above in relation to FIG. 1. Diethyl zinc (DEZ) was used as the zinc precursor and t-butyl acetate (CH.sub.3COOC(CH.sub.3).sub.3) served as the oxygen source. The phosphorus compounds identified in Table 10 were tested as part of the precursor mixture in the deposition of a zinc oxide (ZnO) layer.

[0098] The precursors were delivered in a nitrogen carrier gas via vessels/bubblers with a total flow rate of about 12 standard litres per minute (slm) to 13 standard litres per minute (slm), at standard temperature and pressure, (stp)). Delivery lines were maintained at a temperature in the region of about 150° C. to avoid condensation.

[0099] The experimental data obtained for each of the alternative phosphorus sources investigated as part of the precursor mixture according to the method of the present invention are illustrated in Tables 11 and Table 12.

[0100] Example 53, Example 74, and Example 77 were analysed by SEM and XPS. These Examples were chosen because a similar amount of diethyl zinc (DEZ), tertbutylacetate (tBuOAc) and phosphorus precursor were used for the deposition of the zinc oxide layer.

[0101] Example 74 provides a baseline example of the deposition of zinc oxide (ZnO) using DEZ and tBuOAc. FIG. 10 is an x-ray photoelectron spectroscopy (XPS) trace for Example 74. FIG. 10 illustrates that the film (or layer) deposited comprises zinc atoms and oxygen atoms in the correct stoichiometry for ZnO, and in the absence of any phosphorus atoms. This is to be expected since no phosphorus containing chemicals were involved in the deposition of the zinc oxide layer. FIG. 11 is a scanning electron micrograph (SEM) image of Example 74, for which the thickness of the zinc oxide layer indicated by distance A, was found to be in the range of 267-287 nm.

[0102] Example 53 provides a zinc oxide (ZnO) layer deposited using diethyl zinc (DEZ), tertbutylacetate (tBuOAc) and trimethylphosphite (TMP). FIG. 12 is an x-ray photoelectron spectroscopy (XPS) trace of Example 53. FIG. 12 illustrates again that the coating layer deposited by the method of the present invention comprises zinc (Zn) atoms and oxygen atoms in the correct stoichiometry for ZnO. However, no phosphorus atoms were detected. That is, the results are similar to the results seen when using triethyl phosphite. FIG. 13 is a scanning electron micrograph (SEM) image of Example 53 confirming the thickness of the zinc oxide layer to be in the range of 292 to 300 nm. That is, in Example 53 there was observed an increase in the thickness of the zinc oxide layer of between 4 and 9%, compared to the thickness of the zinc oxide layer in Example 74. Therefore, it can be seen from Example 53 that trimethylphosphite (TMP) may also be used as a phosphorus source in the method of the present invention.

[0103] In Example 77, a zinc oxide coating layer was deposited using diethyl zinc (DEZ), tertbutylacetate (tBuOAc) and triethylphosphate (TEPa). FIG. 14 is an x-ray photoelectron spectroscopy (XPS) trace of the zinc oxide later of Example 77. The x-ray photoelectron spectroscopy (XPS) trace, shows again that a zinc oxide film is deposited which comprises zinc atoms and oxygen atoms, in the correct stoichiometry for ZnO, in the absence of any phosphorus atoms. That is, similar results are seen for Example 77 when using triethyl phosphite. FIG. 15 is an SEM image of Example 77 confirming the thickness of the zinc oxide layer to be in the range of 396 to 406 nm. That is, there was an increase in the thickness of the zinc oxide layer in Example 77 of from 41 and 49% compared to the thickness of the zinc oxide layer obtained in Example 74. These results indicate that triethylphosphate (TEPa) may also be used as a phosphorus source for the deposition of a zinc oxide layer according to the method of the present invention.

[0104] Experiments were carried out using triisopropyl phosphite (tripropan-2-yl phosphite) (TIP), as shown in Table 11. The relevant vapour pressure data was not available, and hence, a comparison between the efficiency of the samples could not be made. However, the experiments still showed that it is possible to deposit a zinc oxide coating using triisopropyl phosphite (TIP).

TABLE-US-00011 TABLE 11 Phosphorus Example or DEZ Precursor Phosphorus Comparative Phosphorus Reactor Carrier DEZ Carrier Precursor Oxidant Run Example Precursor Temperature Gas Flow Vessel T Gas Flow Vessel T Supply Time (CE) Used (° C.) (L/min) (° C.) (L/min) (° C.) (cm.sup.3/hr) (s) 49 TMP 600 0.58 74.0 0.00 0.0 100.00 30 50 TMP 600 0.61 73.0 0.00 0.0 100.00 30 51 TMP 600 0.64 72.0 0.05 29.0 100.00 30 52 TMP 600 0.64 72.0 0.15 29.0 100.00 30  53* TMP 600 0.64 72.0 0.30 29.0 100.00 30  54* TMP 600 0.64 72.0 0.59 29.0 100.00 30  55* TMP 600 0.64 72.0 0.15 29.0 100.00 30 56 TMP 600 0.68 71.0 0.00 0.0 100.00 30 57 TMP 600 0.64 72.0 0.30 29.0 100.00 30 58 TMP 600 0.70 72.0 0.00 20.0 100.00 30 59 TMP 600 0.70 72.0 0.00 20.0 100.00 30 60 TMP 600 0.70 72.0 1.00 30.0 0.00 30 61 TMP 600 0.70 72.0 1.00 81.0 0.00 30 62 TMP 600 0.70 72.0 2.00 81.0 0.00 30 63 TMP 600 0.70 72.0 2.00 81.0 10.00 30 64 TMP 600 0.70 72.0 0.06 81.0 100.00 30 65 TMP 600 0.70 72.0 2.00 81.0 0.00 30 66 TMP 600 0.70 72.0 2.00 81.0 10.00 30 67 TMP 600 0.70 72.0 0.06 81.0 100.00 30 68 TIP 600 0.58 74.0 0.50 26.0 100.00 30 69 TIP 600 0.58 74.0 0.50 34.0 100.00 30 70 TIP 600 0.61 73.0 0.50 46.0 100.00 30 71 TIP 600 0.58 74.0 0.50 55.0 100.00 30 72 TIP 600 0.58 74.0 0.25 57.0 100.00 30 73 TIP 600 0.58 74.0 1.00 55.0 100.00 30 74 TEPa 600 0.68 71.0 0.00 0.0 100.00 30 75 TEPa 600 0.68 71.0 0.05 113.0 100.00 30 76 TEPa 600 0.71 70.0 0.14 114.0 100.00 30 77 TEPa 600 0.71 70.0 0.28 114.0 100.00 30 78 TEPa 600 0.75 69.0 0.54 114.0 100.00 30 79 TEPa 600 0.64 72.0 0.28 114.0 100.00 30 80 TEPa 600 0.64 72.0 0.28 114.0 100.00 30 81 TEPa 600 0.71 70.0 0.28 114.0 100.00 30 *Substrate is float glass coated with a transparent conductive oxide

[0105] Table 11 provides details of the experiments performed in accordance with the method of the present invention using alternative phosphorus sources in the precursor mixture.

TABLE-US-00012 Example or Comparative Molar Ratio Molar Ratio Example DEZ:Phosphorus Molar Ratio Phosphorus (CE) Precursor DEZ:Oxidant precursor:Oxidant 49 0.000 1.782 0.000 50 0.000 1.783 0.000 51 0.014 1.788 123.454 52 0.043 1.788 41.151  53* 0.087 1.788 20.576  54* 0.171 1.788 10.462  55* 0.043 1.788 41.151 56 0.000 1.770 0.000 57 0.087 1.788 20.576 58 0.000 2.029 0.000 59 0.000 2.029 0.000 60 0.330 0.000 0.000 61 2.992 0.000 0.000 62 5.983 0.000 0.000 63 5.983 0.203 0.034 64 0.179 2.029 11.304 65 5.983 0.000 0.000 66 5.983 0.203 0.034 67 0.179 2.029 11.304 74 0.000 1.770 0.000 75 0.013 1.770 134.559 76 0.039 1.782 46.071 77 0.077 1.782 23.035 78 0.149 1.774 11.944 79 0.078 1.788 23.035 80 0.078 1.788 23.035 81 0.077 1.782 23.035 *Substrate is float glass coated with a transparent conductive oxide

[0106] Table 12 provides the ratios of the components in the precursor mixture for the deposition of a layer of zinc oxide according to the present invention using alternative phosphorus sources.

[0107] Investigating the Presence of Phosphorus in Zinc Oxide Layers In the experiments discussed so far, all of the zinc oxide layers deposited had little (˜0.5 atomic %) to no phosphorus inclusion in the layers. This was found to be in contrast to the results analysed for analogous experiments performed by the inventors and described in WO2015177552, which investigated the deposition of zinc oxide layers using dimethylsulfoxide as part of the precursor mixture. In the experiments which used dimethylsulfoxide as part of the precursor mixture, all of the zinc oxide layers appeared to contain sulphur.

[0108] Two samples 82 and 83, were prepared and analysed in which no oxidant was used and for which diethyl zinc (DEZ) and triethyl phosphite were mixed together in the precursor mixture. The experimental conditions used for examples 82 and 83 are shown in Table 13 and Table 14.

[0109] FIG. 16 is an x-ray photoelectron spectroscopy (XPS) trace for Example 82. FIG. 16 illustrates that the layer (film) deposited comprises zinc atoms and oxygen atoms and phosphorus atoms. Table 15 provides the stoichiometry of the zinc oxide layer for Example 82 as ZnO:P.sub.0.75.

[0110] FIG. 17 is x-ray photoelectron spectroscopy (XPS) trace for Example 83. FIG. 17 illustrates that the film deposited comprises zinc atoms, oxygen atoms and phosphorus atoms. Table 15 also provides stoichiometry of the zinc oxide layer for Example 83 as ZnO:P.sub.0.5.

[0111] Table 15 shows that it is possible to deposit both ‘pure’ zinc oxide films, that is, zinc oxide film which do not comprise phosphorus, and also phosphorus doped zinc oxide films using triethyl phosphite by the method of the present invention.

TABLE-US-00013 TABLE 13 Example or DEZ TEP Comparative Reactor Carrier DEZ Carrier TEP Oxidant Run Example Temperature Gas Flow vessel T Gas Flow vessel T Amount Time (CE) (° C.) (L/min) (° C.) (L/min) (° C.) (cm.sup.3/hour) (s) 82 600 0.64 72.0 1.96 104.0 0.00 30 83 600 0.32 72.0 0.95 105.0 0.00 30

[0112] In Table 13 there is illustrated the experimental conditions used for the preparation of examples 82 and 83.

TABLE-US-00014 TABLE 14 Example or Comparative Example Molar Ratio Molar Ratio Molar Ratio (CE) DEZ:TEP DEZ:Oxidant TEP:Oxidant 82 3.003 0.000 0.000 83 3.014 0.000 0.000

[0113] In Table 13 there is illustrated the experimental conditions used for the preparation of examples 82 and 83.

TABLE-US-00015 TABLE 15 Example or Comparative Example Average concentration in the coating (atomic %) (CE) Zinc (Zn) Oxygen (O) Phosphorus (P) 82 23.6 58.5 17.9 83 29.2 55.8 15.0

[0114] In Table 15 there is illustrated the average concentration of each of the elements zinc, oxygen and phosphorus, present in the zinc oxide layer prepared according to the present invention for examples 82 and 83.

[0115] Therefore, by using the method of the present invention it is possible to deposit a zinc oxide coating layer atop a substrate, such as float glass. The zinc oxide coating may be applied to a layer of silica oxide or tin oxide deposited on the glass substrate such as float glass. The resultant coated glass may be used in a range of applications, including but not limited to, a photovoltaic cell. When used in a photovoltaic cell, the zinc oxide coating prepared according to the present invention may be deposited over a layer of fluorine doped tin oxide, the fluorine doped tin oxide being part of a transparent conductive coating, applied above a glass substrate such as float glass. In this regard, FIG. 18 is a schematic representation of a photovoltaic cell comprising a zinc oxide coating layer 120, applied above a transparent conductive coating (TCO) 110, deposited on a glass substrate, such as float glass 100. In a photovoltaic cell, photovoltaic material 130 such as for example a cadmium telluride layer 130 may be applied above the zinc oxide layer 120.