GLASS SOLID ELECTROLYTE LAYER, METHODS OF MAKING GLASS SOLID ELECTROLYTE LAYER AND ELECTRODES AND BATTERY CELLS THEREOF
20220045352 · 2022-02-10
Assignee
Inventors
- Steven J. Visco (Berkeley, CA)
- Vitaliy Nimon (San Francisco, CA, US)
- Valentina Loginova (Walnut Creek, CA, US)
- Yevgeniy S. Nimon (Danville, CA, US)
- Bruce D. Katz (Moraga, CA, US)
Cpc classification
H01M10/0585
ELECTRICITY
H01M4/131
ELECTRICITY
Y02E60/10
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H01M4/1391
ELECTRICITY
H01M10/0525
ELECTRICITY
C03C15/00
CHEMISTRY; METALLURGY
International classification
C03C15/00
CHEMISTRY; METALLURGY
Abstract
Battery component structures and manufacturing methods for solid-state battery cells include a unitary Li ion conducting sulfide glass solid electrolyte structure that serves as the basic building block around which a solid-state battery cell can be fabricated. The unitary glass structure approach can leverage precision controlled high throughput processes from the semiconductor industry that have been inventively modified as disclosed herein for processing a sulfide glass solid electrolyte substrate into a unitary Li ion conducting glass structure, for example, by using etching and lithographic photoresist formulations and methods. The glass substrate may be precision engineered to effectuate a dense glass portion and a porous glass portion that can be characterized as sublayers having predetermined thicknesses. The porous glass sublayer includes a plurality of discrete substantially vertical closed-end holes or trenches that are precision engineered into one or both major substrate surfaces using microfabrication processes.
Claims
1. A unitary Li ion conducting glass structure comprising: a substantially flat Li ion conducting sulfide glass substrate having first and second major opposing surfaces, the glass substrate having a first porous glass portion that is characterizable as a first porous sublayer with a certain thickness and a dense glass portion that is characterizable as a dense glass sublayer with a certain thickness, wherein the first porous sublayer comprises a first plurality of discrete closed-end substantially vertical holes and/or trenches that extend into the substrate from the substrate first major surface to a predetermined depth, the first porous sublayer defining a hole and/or trench pattern on the first major surface.
2. The unitary Li ion conducting glass structure of claim 1 wherein the glass substrate is characterizable as having a asymmetric architecture composed of the dense glass sublayer and the first porous glass sublayer, wherein the dense glass sublayer defines the substrate second major surface and extends therefrom into the substrate.
3. The unitary Li ion conducting glass structure of claim 1 further comprising a second porous portion that is characterizable as a second porous sublayer comprising a second plurality of discrete closed-end and substantially vertical holes that extend into the substrate from the substrate second major to a predetermined depth, the second porous sublayer defining a hole pattern on the second major surface; and wherein the glass substrate is characterizable as having a sandwich architecture composed of the dense glass sublayer sandwiched between the first and second porous glass sublayers.
4. The unitary Li ion conducting glass structure of claim 1 wherein the number density of holes in the first or second porous sublayer is >100 per mm.sup.2.
5. The unitary Li ion conducting glass structure of claim 1 wherein the holes are substantially circular and effectuate a substantially regular hole pattern on their respective substrate surface.
6. The unitary Li ion conducting glass structure of claim 1 wherein the holes are highly anisotropic with an aspect ratio >10:1.
7. The unitary Li ion conducting glass structure of claim 1 wherein the holes have substantially vertical sidewalls.
8. The unitary Li ion conducting glass structure of claim 1 wherein the holes have a concave shaped sidewall.
9. The unitary Li ion conducting glass structure of claim 1 wherein the hole pattern is created by lithography and etching.
10. The unitary Li ion conducting glass structure of claim 1 wherein the thickness of the dense glass sublayer is about 1-to-50 um.
11. The unitary Li ion conducting glass structure of claim 1 wherein the thickness of the first porous sublayer and second porous sublayer (when present) is about 5 to 100 um.
12. The solid electrolyte glass substrate of claim 3 wherein the first surface hole pattern and second surface hole pattern is different.
13. The unitary Li ion conducting glass structure of claim 1 wherein the holes are substantially circular shaped and have a diameter value that is in a selected from the group consisting of >5 to 10 um, >1 to 5 um, and >100 nm to 1 um.
14. The unitary Li ion conducting glass structure of claim 1 wherein the Li ion conducting sulfide glass substrate comprising lithium, sulfur, and one or more of boron, germanium, phosphorus and silicon.
15. A method of making a unitary Li ion conducting glass structure, the method comprising: i) providing a substantially dense and flat Li ion conducting sulfide glass substrate, the substrate having first and second opposing major surfaces; ii) etching a hole pattern into one or both major surfaces to produce a plurality of discrete spaced-apart closed end holes and/or trenches, wherein the etching involves contacting the substrate surface with an etching media.
16. The method of claim 15 wherein the etching step involves exposing the first substrate surface to a liquid etching solution comprising water as the etchant and a carrier solvent that is inert in direct contact with the glass substrate.
17-19. (canceled)
20. The method of claim 15 wherein the etching step involves exposing the first substrate surface to a liquid etching solution comprising an organic carbonic acid as the etchant and a carrier solvent that is inert in direct contact with the glass substrate.
21. (canceled)
22. The method of claim 15 wherein the etching media is a gaseous/vapor etching mixture comprising water as the etchant and a carrier gas that is inert in direct contact with the glass substrate.
23. The method of claim 15 wherein the etching media is a gaseous/vapor etching mixture comprising an organic carbonic acid as the etchant and a carrier gas that is inert in direct contact with the glass substrate.
24-33. (canceled)
34. A battery cell comprising a solid electrolyte glass substrate, comprising a unitary Li ion conducting glass structure comprising: a substantially flat Li ion conducting sulfide glass substrate having first and second major opposing surfaces, the glass substrate having a first porous glass portion that is characterizable as a first porous sublayer with a certain thickness and a dense glass portion that is characterizable as a dense glass sublayer with a certain thickness, wherein the first porous sublayer comprises a first plurality of discrete closed-end substantially vertical holes and/or trenches that extend into the substrate from the substrate first major surface to a predetermined depth, the first porous sublayer defining a hole and/or trench pattern on the first major surface; and further comprising active cathode material disposed inside the holes.
35-36. (canceled)
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS
[0030] Reference will now be made in detail to specific embodiments of the disclosure. Examples of the specific embodiments are illustrated in the accompanying drawings. While the disclosure will be described in conjunction with these specific embodiments, it will be understood that it is not intended to limit the disclosure to such specific embodiments. On the contrary, it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the disclosure as defined by the appended claims. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. Embodiments of the present disclosure may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present disclosure.
[0031] When used in combination with “comprising,” “a method comprising,” “a device comprising” or similar language in this specification and the appended claims, the singular forms “a,” “an,” and “the” include plural reference unless the context clearly dictates otherwise. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood to one of ordinary skill in the art to which this disclosure belongs.
[0032] In
[0033] With reference to
[0034] While substantially cylindrical holes are depicted in
[0035] In
[0036] In
[0037] In
[0038] In
[0039] As described herein, in combination with the thickness of the dense glass sublayer, the microstructure and hole pattern of the porous sublayer(s) can be adjusted to target a particular battery application. For instance, a high number density of narrow holes for enhanced battery power, or larger holes for an application in need of a compact or lightweight high energy density cell. The density of holes and their diameter and depth are factors to consider in terms of manufacturability, cost and overall structural strength.
[0040] With reference to
[0041] In various embodiments the closed-end holes have substantially uniform and regular diameters along their length. Typically, the holes have a circular cross section. However, the present disclosure contemplates diameters that vary along the length of the hole. Such a variation may result from the manner by which the hole is formed (e.g., wet etching), and this is described in more detail below. In various embodiments the hole diameter (when circular) or largest planar dimension for a square, oval or other shaped hole is in the range of >50 to 100 um, or >10 to 50 um, or >5 to 10 um, or >1 to 5 um, or less than 1 um (e.g., >100 nm to 1 um). In various embodiments the holes have diameter less than 100 nm (e.g., about 50 to 100 nm). Hole patterns and geometries are generally not limited. The holes are substantially vertical and highly anisotropic (e.g., cylindrical) with length to diameter aspect ratios of at least 2:1, or at least 10:1 (e.g., about 2:1, or about 5:1, or about 10:1, or about 20:1, or about 50:1; or about 100:1, or about 1000:1, or >1000:1). Generally, the number hole density (number of holes/mm.sup.2) is related to the total porosity of the porous sublayer. In various embodiments the number hole density is in the range of 1000 holes/mm.sup.2 to 10,000 holes/mm.sup.2, hole densities (holes/mm.sup.2) greater than 20,000, or greater than 50,000 or greater than 100,000 are also contemplated.
[0042] Precise control of the porous sublayer microstructure is achieved by using etching methods of the present disclosure combined with lithography techniques, to create engineered holes and trenches with specific geometric patterns and precise diameters and aspect ratios. In particular, precise geometric hole patterns may be engineered into the unitary glass structure using lithographic masking techniques modified for their applicability to be used for etching Li ion conducting sulfide solid electrolyte substrates.
[0043] In accordance with the present disclosure, methods for making unitary glass structures using etching and masking techniques are provided. Generally, the methods involve exposing precisely defined surface regions of a dense Li ion conducting sulfide glass with an etching media. In various embodiments the method involves: i) providing Li ion conducting sulfide glass substrate (e.g., a dense glass monolith) having first and second major opposing surfaces; and ii) exposing precisely defined surface regions to an etching media for a time that is sufficient to form the desired shape and depth. In various embodiments a patterned mask or masking layer may be used to define the etching regions. In preferred embodiments, masking techniques and lithographic processes are employed for exceptional precision and control over the size and location of the holes or trenches.
[0044] In accordance with embodiments of the present disclosure the porous sublayers are formed by etching processes, including wet or dry etching methods of the present disclosure, and combinations thereof.
[0045] In various embodiments the porous sublayer(s) are engineered into a Li ion conducting sulfide glass monolith (e.g., in the form of a glass sheet) using a wet etching process of the present disclosure. Li ion conducting sulfide glasses are extremely sensitive to moisture. In the presence of water or its vapor, sulfide glasses undergo rapid hydrolysis followed by evolution of hydrogen sulfide gas. In order to reduce the hydrolysis rate, water can be mixed with non-aqueous solvents that don't react with the glass. In particular, mixtures with very low water content can be prepared. In various embodiments, mixtures of water with glymes, for instance DME, are prepared and utilized to decrease the rate of glass hydrolysis. The mixtures having an H.sub.2O to DME ratio of 1:1, 1:5, 1:10, 1:20 1:50, 1:100, 1:200, 1:500, 1:1000 can be used for sulfide glass etching. In other embodiments, mixtures of water vapor and a carrier gas (nitrogen or argon) are used.
[0046] It is difficult to control the process of hydrolysis where at least one of the hydrolysis products is a salt poorly soluble in water. This can result in blocking of the glass surface with a solid precipitate and a progressive reduction in the rate of hydrolysis. For instance, hydrolysis of Li.sub.2S—P.sub.2S.sub.5 glasses leads to formation of lithium orthophosphate having low solubility in water. In order to prevent formation of insoluble products, strong inorganic acids such as hydrochloric acid, can be used.
[0047] Since hydrochloric acid is soluble in acetonitrile, in various embodiments low concentration solutions of hydrochloric acid in acetonitrile may be used as etching media. After the etching process is complete, the glass surface is rinsed with an excess of acetonitrile, which does not react with sulfide glasses.
[0048] In a specific case, organic carbonic acids may be used for etching of sulfide glasses. Formic, acetic, propionic, butyric, oxalic, and malonic acids are particularly suitable.
[0049] It was found that liquid formic, acetic, propionic, and butyric acids are miscible with certain aprotic solvents, in particular, glymes and organic carbonates, which are not reactive to sulfide glasses. The solid carbonic acids such as oxalic and malonic acids, have a significant solubility in these solvents. In various embodiments, in order to etch sulfide glasses and adjust the rate of glass hydrolysis (or completely eliminate it) mixtures of formic, acetic, propionic, and butyric acids with glymes, in particular, DME, diglyme or triglyme, or with organic carbonates, in particular, DMC, may be used.
[0050] In various embodiments, etching of sulfide glasses occurs in a gaseous phase containing a vapor of carbonic acids or their mixtures with carrier gases (nitrogen or argon). Regulation of the acid vapor pressure is achieved by changing the temperature or adjusting the ratio between the acid in the vapor phase and the carrier gas.
[0051] In various embodiments, the chemical etching process may include more than one step. In a particular case, a controlled hydrolysis step can be followed by a glass surface treatment with acidic solutions to dissolve the precipitate(s) consisting of compounds with low solubility in water. Finally, the glass surface is rinsed with aprotic solvents, such as glymes and organic carbonates, in order to remove water and acids from the glass surface.
[0052] In various embodiments, a sulfide solid electrolyte substrate is masked and then moved to a container where the unprotected (unmasked) substrate surface is exposed to an etching solution in order to produce a porous glass layer on the surface of a dense glass layer. After removal of the mask, the active components of the etching solution, such as water and acid, are rinsed away with an excess of an aprotic solvent. Wet etching may render a more concave shape along the depth of the hole, and, depending on how the wet etch is applied to the glass surface, may result in an isotropically etched hole.
[0053] In various embodiments a dry etching method is provided for creating the porous sublayer, including chemical and physical dry etching processes (e.g., plasma etch). Dry plasma etching may involve exposing glass surface regions to a chemically reactive plasma (a chemical process), leading to volatization and removal of glass reactive species. In various embodiments the dry plasma etch is a physical process performed using ion plasma etching (ion milling) (which is particularly well suited for creating micropore and small mesopore holes). For example, the etching is performed in an argon plasma.
[0054] In other embodiments a different physical process may be used that is based on the interaction of laser irradiation with the sulfide glass to create pores of various sizes into the sulfide glass substrate surface(s). This includes utilizing ultraviolet excimer lasers for glass ablation. High speed laser micromachining with high intensity picosecond or femtosecond pulsed lasers may also be used.
[0055] In various embodiments, the porous sublayer is created using a patterned structural mask (e.g., fabricated from metals and plastics). Mineral oil may also be used for masking areas that are outside the etching zone but may nonetheless be nearby the etching media. Aluminum, chromium, titanium and nickel masks are particularly suitable for wet etching processes that use a carbonic acid etchant. In particular embodiments, a titanium mask is used in combination with etching media based on acetic, formic, malonic, butyric, and propionic acids; nickel masks are particularly suitable when used in combination with malonic, oxalic, and formic acids; and aluminum masks for propionic and butyric acids.
[0056] In various embodiments, the method for making the porous glass sublayer involves lithography processes, including photolithography and electron beam lithography.
[0057] Photolithography is a process widely used by the microelectronics industry. The process involves transferring geometric patterns from a photomask to a light sensitive photoresist that is coated onto a substrate surface. In accordance with the present disclosure, photolithographic techniques are generally applied for patterning a hole or trench structure/pattern into an ionically conducting solid electrolyte to create a porous sublayer. Moreover, known photolithography processes cannot be used for Li ion conducting sulfide solid electrolytes due to their high reactivity to moisture. Accordingly, lithography processes provided herein have been specifically developed for creating porous sublayers into inorganic sulfide ion conducting solid electrolytes. In particular, conventional aqueous media that is used for semiconductor processing is replaced herein with dried non-aqueous media throughout all steps of the photolithography processes, and all heat treatments are performed below the glass transition temperature of the Li ion conducting sulfide glass substrate.
[0058] In various embodiments, negative photoresists are used in the lithography processes of the present disclosure. In other embodiments, positive photoresists may be used.
[0059] Photoresist application onto the surface of the Li ion conducting sulfide glass substrate is performed by dipping, spraying or, in a specific case, by spin coating. The utilized photoresists contain polymerized phenolic resins and dry organic solvents, such as PGMEA, ethyl lactate, or butyl acetate (having b.p. as low as 127° C.). The soft-baking step necessary to remove solvents from the photoresist, as well as hard-baking, which is the final step of the photolithographic process, are done at a temperature lower than T.sub.g of the sulfide glass (50° C. lower, 20° C. lower, at least 10° C. lower). After soft-baking, the photoresist (in the areas unprotected with mask) is exposed to short wavelength visible light or UV light. The following step of photoresist removal (in the exposed areas for positive photoresists and in the unexposed areas for negative photoresists) is called developing. In standard lithography, developing is usually performed in aqueous solutions of sodium hydroxide or tetramethylammonium hydroxide (TMAH). Herein developing media based on solutions of TMAH in dry aprotic solvents may be used. In a specific case, the developing solution is a solution of TMAH in acetonitrile. After the photoresist is no longer needed, it is removed by washing in dry NMP. In another case, the photoresist is removed with oxygen plasma.
[0060] In
[0061] In
[0062] In
[0063] Cell 700 includes cathode active material 722 disposed inside holes 122 and lithium metal layer 760. Surfaces of unitary glass structure 100 are covered by a protective film that enhances or renders interfacial stability between the surfaces of the Li ion conducting sulfide glass and the cathode and anode active material. Cathode active material 722 may be loaded into the holes using vacuum impregnation. For instance, a slurry consisting of active material, polymeric binder and conductive additive (e.g., carbon black or the like) and in some instances also including Li ion conducting sulfide glass particles dispersed in an appropriated liquid solvent (e.g., NMP) is impregnated into the pore channels, and then dried. Multiple impregnation and drying steps may be performed to provide the desired particle loading. When the slurry includes Li ion conducting sulfide glass particles, those particles are generally also surface coated with a protective layer. Generally, battery cell 700 further includes cathode active material overlayer 660, which may be formed onto surface 111 during or after impregnating the holes with cathode active material. A current collector is then generally applied onto the cathode overlayer (e.g., by evaporating a thin layer of Al metal). In various embodiments, lithium metal layer 750 is deposited onto protected surface 111 (e.g., using vacuum evaporation or other suitable physical vapor deposition approach). In other embodiments it is contemplated that the battery cell is built with an anode free configuration, and a current collector is applied directly onto surface 111.
[0064] In
CONCLUSION
[0065] Although the foregoing disclosure has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing both the process and compositions of the present disclosure. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the disclosure is not to be limited to the details given herein.
[0066] All references cited herein are incorporated by reference for all purposes.