GALLIUM OXIDE FILM BASED ON SAPPHIRE SUBSTRATE AS WELL AS GROWTH METHOD AND APPLICATION THEREOF

Abstract

The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-Ga.sub.2O.sub.3 and α-Al.sub.2O.sub.3, but also effectively reduce the defect density of α-Ga.sub.2O.sub.3 epitaxial film, thus further improving the crystal quality of the α-Ga.sub.2O.sub.3 epitaxial film materials.

Claims

1. A preparation method of a gallium oxide film based on a sapphire substrate, comprising: forming more than one α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers.

2. The preparation method according to claim 1, further comprising: placing the sapphire substrate into a reaction chamber, then feeding an oxygen source, a gallium source and/or an aluminum source into the reaction chamber separately at different times by means of pulse to form the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers.

3. The preparation method according to claim 2, wherein, in a growth cycle for each of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers, any one of the oxygen source, the gallium source and/or the aluminum source is firstly fed into the reaction chamber continuously for a first time period, then an interval of a second time period, then another one of the oxygen source, the gallium source and/or the aluminum source is fed into the reaction chamber continuously for a third time period, and then an interval of a fourth time period.

4. The preparation method according to claim 3, wherein: the first time period, the second time period, the third time period, and the fourth time period each has a duration of 0.1 to 99 s.

5. The preparation method according to claim 2, wherein: the oxygen source is selected from oxygen-containing substances.

6. The preparation method according to claim 5, wherein: the oxygen-containing substances comprise any one or a combination of two or more of oxygen gas, water, nitrous oxide, nitric oxide, carbon dioxide and carbon monoxide.

7. The preparation method according to claim 2, wherein: the gallium source is selected from gallium-containing organic compounds.

8. The preparation method according to claim 7, wherein: the gallium source comprises trimethyl gallium and/or triethyl gallium.

9. The preparation method according to claim 2, wherein: the aluminum source is selected from aluminum-containing organic compounds.

10. The preparation method according to claim 9, wherein: the aluminum source comprises trimethyl aluminum and/or triethyl aluminum.

11. The preparation method according to claim 1, wherein: for the forming of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers, a growth pressure is 10 to 760 Torr, and a growth temperature is 100 to 1000° C.

12. The preparation method according to claim 1, comprising: successively forming 1 to 99 of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers on the sapphire substrate.

13. The preparation method according to claim 1, wherein: each of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers has a thickness of 1 to 1000 nm.

14. The preparation method according to claim 1, wherein: at least two of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers contain different amounts of Al element.

15. The preparation method according to claim 1, wherein: for the forming of the gallium oxide epitaxial layers, a growth pressure is 10 to 760 Torr, and a growth temperature is 100 to 600° C.

16. The preparation method according to claim 1, wherein: the gallium oxide epitaxial layers are made of α-Ga.sub.2O.sub.3.

17. A gallium oxide film based on a sapphire substrate, wherein the gallium oxide film is prepared by the preparation method according to claim 1.

18. A gallium oxide film based on a sapphire substrate, comprising a sapphire substrate and a gallium oxide epitaxial layer, wherein: there are more than one α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers further formed between the sapphire substrate and the gallium oxide epitaxial layers, wherein 0.99≥x≥0.01.

19. The gallium oxide film based on the sapphire substrate according to claim 18, wherein: each of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers has a thickness of 1 to 1000 nm.

20. The gallium oxide film based on the sapphire substrate according to claim 18, wherein: the gallium oxide film comprises 1 to 99 of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers.

21. The gallium oxide film based on the sapphire substrate according to claim 18, wherein: at least two of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers contain different amounts of Al element.

22. A method of producing semiconductor power devices or semiconductor photoelectronic devices, comprising the step of using the gallium oxide film based on the sapphire substrate according to claim 18.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG. 1 is the structural representation of a gallium oxide film based on a sapphire substrate according to an exemplary embodiment of the disclosure.

[0018] FIG. 2 is a diagram showing the flux of oxygen source and aluminum/gallium source in the pulsed epitaxial growth according to an exemplary embodiment of the disclosure.

[0019] FIG. 3 is a diagram showing the epitaxial growth of α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers according to an exemplary embodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

[0020] In view of the deficiencies in the prior art, the present inventor has tried to employ a pulsed epitaxy method to grow a structure of α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers containing different amounts of Al components at low temperature, so as to alleviate the α-Ga.sub.2O.sub.3 film strain, reduce the dislocation density of the epitaxial film, and improve the quality of α-Ga.sub.2O.sub.3 crystals. However, on one hand, Al.sub.2O.sub.3 has a smaller bond-length and a higher decomposition temperature compared with Ga.sub.2O.sub.3, so the epitaxy of α-Al.sub.2O.sub.3 also requires a higher temperature. The quality of α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 crystals is affected by the physical and chemical absorption capacities of Al atoms on the surface of the epitaxial layer, the mobility capacities and the abilities to be incorporated into the crystal lattice as well as the desorption temperature and the like. On the other hand, the epitaxy of α-Ga.sub.2O.sub.3 requires low temperature, and the phase transition would occur above 550° C. This results in that it is difficult to grow α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers containing a high amount of Al components below this temperature. That is, if the above solution which has been attempted by the inventor is employed, the contradictory problem of the epitaxial temperatures of α-Ga.sub.2O.sub.3 and α-Al.sub.2O.sub.3 will be unavoidable.

[0021] For this, a long time of research and a great deal of practices have been further conducted by the present inventor to propose the technical scheme of the disclosure, in which a pulsed epitaxy method is mainly employed to grow a composite strain buffering structure of α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 at low temperature to solve the problem in the existing technology.

[0022] An embodiment of the disclosure provides a preparation method of a gallium oxide film based on a sapphire substrate, including:

[0023] Forming more than one α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and

[0024] Forming gallium oxide epitaxial layers on the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers.

[0025] Further, the preparation method includes: placing the sapphire substrate into a reaction chamber, then feeding an oxygen source, a gallium source and/or an aluminum source into the reaction chamber separately at different time by means of pulse to form the more than one α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers.

[0026] Furthermore, the preparation method specifically includes: in each growth cycle, any one of the oxygen source, the gallium source and/or the aluminum source is firstly fed into the reaction chamber continuously for a first time period, then an interval of a second time period, then another one of the oxygen source, the gallium source and/or the aluminum source is fed into the reaction chamber continuously for a third time period, and then an interval of a fourth time period.

[0027] Further, the first time period, the second time period, the third time period, and the fourth time period each has a duration of 0.1 to 99 s.

[0028] Further, the oxygen source is selected from oxygen-containing substances which are capable of supplying oxygen element.

[0029] Preferably, the oxygen-containing substances includes any one or a combination of two or more of oxygen gas, water, nitrous oxide, nitric oxide, carbon dioxide and carbon monoxide, but not limited to this.

[0030] Further, the gallium source is selected from gallium-containing organic compounds.

[0031] Preferably, the gallium source includes trimethyl gallium and/or triethyl gallium, but not limited to this.

[0032] Further, the aluminum source is selected from aluminum-containing organic compounds.

[0033] Preferably, the aluminum source includes trimethyl aluminum and/or triethyl gallium, but not limited to this.

[0034] Further, for the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers, the growth pressure is 10 to 760 Torr, and the growth temperature is 100 to 1000° C.

[0035] Furthermore, the preparation method includes: successively forming 1 to 99 the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers on the sapphire substrate.

[0036] Furthermore, each of the α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers has a thickness of 1 to 1000 nm.

[0037] Further, at least two α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 layers contain different amounts of Al element.

[0038] Further, for the gallium oxide epitaxial layer, the growth pressure is 10 to 760 Torr, and the growth temperature is 100 to 600° C.

[0039] Further, the gallium oxide epitaxial layer is made of α-Ga.sub.2O.sub.3.

[0040] An embodiment of the disclosure further provides a gallium oxide film based on a sapphire substrate prepared by the above preparation method.

[0041] An embodiment of the disclosure further provides a gallium oxide film based on a sapphire substrate, including a sapphire substrate and a gallium oxide epitaxial layer, and there are more than one α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers further formed between the sapphire substrate and the gallium oxide epitaxial layer, wherein 0.99≥x≥0.01.

[0042] Further, each α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 layer has a thickness of 1 to 1000 nm.

[0043] Further, the gallium oxide film includes 1 to 99 α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 layers.

[0044] Further, at least two α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 layers contain different amounts of Al element.

[0045] A pulsed epitaxy method is employed in the disclosure to grow a structure of α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers containing different amounts of Al components at low temperature, which can not only avoid the difficulty of contradictory epitaxial temperatures of α-Ga.sub.2O.sub.3 and α-Al.sub.2O.sub.3, but also effectively reduce the defect density of α-Ga.sub.2O.sub.3 epitaxial film, and alleviate the α-Ga.sub.2O.sub.3 film strain, thus improving the crystal quality of the α-Ga.sub.2O.sub.3 epitaxial film materials.

[0046] An embodiment of the disclosure further provides an application of the gallium oxide film based on the sapphire substrate in the production of semiconductor power devices or semiconductor photoelectronic devices.

[0047] The implementation process and principle of the technical scheme according to the embodiments of the disclosure are further illustrated below in combination with the embodiments and the accompanying drawings.

[0048] With reference to FIG. 1, showing a structural representation of a gallium oxide film based on a sapphire substrate according to an exemplary embodiment of the disclosure, which includes a sapphire substrate, as well as multiple α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers and one or more α-Ga.sub.2O.sub.3 epitaxial layers successively disposed on the sapphire substrate.

[0049] The gallium oxide film based on the sapphire substrate in this embodiment can be prepared by a process including the following steps:

[0050] 1) A pulsed epitaxy method is employed to grow α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers on a sapphire substrate at low temperature. The epitaxial growth method may be selected from chemical vapor deposition (CVD), especially metal organic chemical vapor deposition (MOCVD) and the like; the applicable equipment includes CVD (Chemical vapor deposition equipment), LPCVD (Low pressure chemical vapor deposition equipment), MOCVD (Metal organic chemical vapor deposition equipment), MBE (Molecular beam epitaxy equipment), LMBE (Laser molecular beam epitaxy equipment), ALD (Monoatomic layer deposition equipment), PEALD (Plasma enhanced atomic layer deposition equipment), HVPE (Hydride vapor phase epitaxy equipment) and the like.

[0051] In particular, with reference to FIG. 2 and FIG. 3, oxygen source (may be oxygen gas) and gallium/aluminum source (e.g., triethyl gallium/trimethyl gallium) are epitaxial grown periodically by means of pulse separation, that is, in one pulse cycle period (t.sub.1, t.sub.2, t.sub.3, t.sub.4 pulse widths represent the following four variables respectively: the time for feeding the oxygen source into the reaction chamber, the interval time, the time for feeding the gallium/aluminum source into the reaction chamber, and the interval time, which are alternating, wherein 0.1 s≤t.sub.1/t.sub.2/t.sub.3/t.sub.4≤99 s), the number of pulse cycles, the pulse width (corresponding to the time for feeding the oxygen source, the gallium/aluminum source into the reaction chamber) and the number of pulses (corresponding to the number of times the oxygen source, the gallium/aluminum source are fed into the reaction chamber) are monitored and designed flexibly, so as to realize the growth of high-quality α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 film materials (i.e., the strain buffering layers) at low temperature (that is, allowing the atoms migrate to the optimal position at lower temperature to form bonds, thus realizing the high-quality film epitaxy).

[0052] A pulsed epitaxy method is employed to feed an oxygen source and a gallium source/an aluminum source into the reaction chamber separately at different time, which can reduce the chance of pre-reaction between O and Al/Ga due to their contact before reaching the substrate, reduce the material defects caused by the precipitation of the pre-reaction products, increase the lateral mobility of Al/Ga atoms on the growth surface, thus allowing Al/Ga—O to react to form bonds at the optimal lattice point on the growth surface, making the binding of (Al.sub.xGa.sub.1−x).sub.2O.sub.3 more regular, allowing the atoms to be arranged regularly when bound into the crystals and obtaining an atomically smooth surface.

[0053] The growth process can be controlled by adjusting the process parameters of pulsed growth such as pulse width, interval, cycles and stacked time, etc., to improve the quality of crystals. Based on the buffering layers containing different amounts of Al component, the strain during the epitaxy can be adjusted and the stress can be released by controlling the temperature and thickness of (Al.sub.xGa.sub.1−x).sub.2O.sub.3 (0.99≥x≥0.01).

[0054] In this embodiment, the oxygen source may be selected from various oxygen-containing substances being capable of generating O molecules, such as oxygen gas, water, nitrous oxide, nitric oxide, carbon dioxide, carbon monoxide, etc.

[0055] In this embodiment, the gallium source may be selected from various metal organic sources of Ga, such as trimethyl gallium (TEG), triethyl gallium (TMG); other Ga-containing sub stances.

[0056] In this embodiment, the aluminum source may be selected from various metal organic sources of Al, such as trimethyl aluminum (TEA), triethyl gallium (TMA); other Al-containing substances.

[0057] In this embodiment, for each α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layer, the pressure for epitaxial growth is preferably controlled at 10 Torr to 760 Torr or higher.

[0058] In this embodiment, for each α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layer, the temperature for epitaxial growth is preferably 100° C. to 1000° C.

[0059] In this embodiment, for each α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layer, the temperature for epitaxial growth is preferably 100° C. to 600° C.

[0060] In this embodiment, in each α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layer, x is preferably selected from the range of 0.99≥x≥0.01.

[0061] In this embodiment, the number of α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layers is preferably in the range of 99≥the number of layers≥1.

[0062] In this embodiment, each α-(Al.sub.xGa.sub.1−x).sub.2O.sub.3 strain buffering layer has a thickness preferably in the range of 1 nm≥thickness≥1000 nm.

[0063] In this embodiment, the various times in the above pulsed epitaxy (t.sub.1, t.sub.2, t.sub.3, t.sub.4) are preferably in the range of 99 s≥t≥0.1 s.

[0064] 2) Conducting the growth of α-Ga.sub.2O.sub.3 epitaxial layer

[0065] In this embodiment, the growth equipment of α-Ga.sub.2O.sub.3 epitaxial layer also may be MOCVD (metal organic chemical vapor deposition) and the like, and the applicable equipment includes the applicable equipment includes CVD (Chemical vapor deposition equipment), LPCVD (Low pressure chemical vapor deposition equipment), MOCVD (Metal organic chemical vapor deposition equipment), MBE (LMBE) (Molecular beam epitaxy equipment), ALD (PEALD) (Monoatomic layer deposition equipment), HVPE (hydride vapor phase epitaxy equipment) and the like.

[0066] In this embodiment, the epitaxial growth pressure used in the step 2) is preferably 10 Torr to 760 Torr or higher.

[0067] In this embodiment, the growth temperature of the α-Ga.sub.2O.sub.3 epitaxial layer is preferably 100° C. to 600° C.

[0068] The method provided in the embodiments of the disclosure can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-Ga.sub.2O.sub.3 and α-Al.sub.2O.sub.3, but also effectively reduce the defect density of α-Ga.sub.2O.sub.3 epitaxial film, thus obtaining the α-Ga.sub.2O.sub.3 epitaxial film materials with an ideal quality.

[0069] It should be understood that the above embodiments are only intended to illustrate the technical conception and features of the disclosure, and aim to enable persons familiar with the art to understand the content of the disclosure and apply it accordingly, rather than limiting the scope of the disclosure thereby. All equivalent changes or modifications made substantially according to the spirit of the disclosure should be covered within the scope of the disclosure.