ELECTRO-ACOUSTIC RESONATOR AND METHOD FOR MANUFACTURING THE SAME

Abstract

Electro-acoustic resonator and method for manufacturing the same An electro-acoustic resonator comprises an acoustic mirror (120) disposed on a carrier substrate (110), a bottom electrode (130) and a piezoelectric layer (140). A structured silicon dioxide flap layer (150) is disposed on the piezoelectric layer (140), both layers having a common contact surface. Direct disposal of the silicon dioxide (150) on the piezoelectric layer (140) increases the quality factor of the resonator and leads to enhanced RF filter performance.

Claims

1. An electro-acoustic resonator, comprising: a carrier substrate (110); an acoustic mirror (120) disposed on the carrier substrate; a bottom electrode (130) disposed on the acoustic mirror; a piezoelectric layer (140), disposed on the bottom electrode; a structured silicon dioxide layer (150) disposed on portions of the piezoelectric layer, the portions of the piezoelectric layer and the structured silicon dioxide layer having a common contact surface; and a top electrode (170) disposed on the piezoelectric layer.

2. The electro-acoustic resonator of claim 1, wherein the piezoelectric layer (140) and the structured silicon dioxide layer (150) have a common contact surface without a seed layer disposed therebetween.

3. The electro-acoustic resonator of claim 1, wherein the piezoelectric layer (140) and the structured silicon dioxide layer (150) have a direct mechanical contact with each other.

4. The electro-acoustic resonator of claim 1, wherein the structured silicon dioxide layer (150) surrounds a region in which the top electrode (170) is disposed.

5. The electro-acoustic resonator of claim 1, wherein the structured silicon dioxide layer (150) surrounds a region in which the silicon dioxide layer is removed and in which the top electrode (170) is disposed.

6. The electro-acoustic resonator of claim 1, wherein the top electrode (170) comprises a layer stack comprising a bottom layer of tungsten, an intermediate layer of a composition of aluminum and copper and a top layer of a metal nitride.

7. The electro-acoustic resonator of claim 1, further comprising a metal overlap layer (160) disposed on the structured silicon dioxide layer (150) and extending underneath a portion of the top electrode layer (170), wherein the metal overlap layer is disposed between the top electrode (170) and the piezoelectric layer (140) at said portion.

8. The electro-acoustic resonator of claim 7, wherein the metal overlap layer (160) comprises a layer stack of titanium and tungsten.

9. The electro-acoustic resonator of claim 1, wherein the piezoelectric layer (140) comprises one of aluminum nitride and aluminum scandium nitride.

10. A method for manufacturing an electro-acoustic resonator, comprising: providing a carrier substrate (110) and an acoustic mirror (120) disposed on the carrier substrate; forming a structured bottom electrode (130) on the acoustic mirror; forming a piezoelectric layer (140) on the bottom electrode; forming a layer of silicon dioxide (150) on the piezoelectric layer thereby forming a common contact surface between the layer of silicon dioxide (150) and the piezoelectric layer (140); removing a portion of the silicon dioxide layer (150) in a region opposite the bottom electrode (130) thereby exposing the piezoelectric layer; forming a top electrode (170) on the piezoelectric layer in the region of the exposed piezoelectric layer.

11. The method of claim 10, wherein the layer of silicon dioxide (150) is formed on the piezoelectric layer (140) without an intervening metal seed layer.

12. The method of claim 10, wherein the step of forming a layer of silicon dioxide (150) comprises depositing the layer of silicon dioxide by physical vapor deposition.

13. The method of claim 10, wherein the step of forming a piezoelectric layer (140) and the step of forming a layer of silicon dioxide (150) are performed without breaking a vacuum.

14. The method of claim 10, after the step of removing a portion of the silicon dioxide layer (150) and before the step of forming a top electrode (170), performing a step of forming an overlap layer (160) made of metal and removing a portion of the overlap layer in a region opposite the bottom electrode (130) so that the overlap layer is disposed between the top electrode (170) and the piezoelectric substrate (140) in a region where the portion of the silicon dioxide (150) layer is removed.

15. A radio frequency (RF) filter, comprising: a first and a second port (201, 202); a series path coupled between the first and second ports, the series path comprising a serial connection of electro-acoustic resonators (210, 211, 212, 213); and one or more shunt paths coupled to at least one of the resonators of the series path, the one or more shunt paths each including at least one electro-acoustic resonator (214, 215, 216, 217).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In the drawings:

[0025] FIG. 1 shows a cross-section of a portion of a bulk acoustic wave resonator;

[0026] FIG. 2 shows a schematic diagram of a RF filter; and

[0027] FIG. 3 shows a transmission diagram of the RF filter of FIG. 2.

DETAILED DESCRIPTION OF EMBODIMENTS

[0028] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings showing embodiments of the disclosure. The disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will fully convey the scope of the disclosure to those skilled in the art. The drawings are not necessarily drawn to scale but are configured to clearly illustrate the disclosure.

[0029] FIG. 1 depicts a cross-sectional view of a portion of a bulk acoustic wave (BAW) resonator according to the principles of the present disclosure. The resonator is of the solidly mounted resonator (SMR) type that includes an acoustic mirror such as a Bragg mirror on which an acoustically active region is disposed. In more detail, the depicted BAW resonator comprises a carrier substrate no such as a silicon wafer. A Bragg mirror arrangement 120 is disposed on carrier substrate 110. Bragg mirror 120 comprises a number of layers of acoustically higher impedance such as layers 122, 124 that may be made of tungsten and other layers of acoustically low impedance such as layers 121, 123, 125 that may be made of a dielectric material such as silicon dioxide. The topmost layer 125 of the Bragg mirror 120, in the present example, is made of silicon dioxide. A bottom electrode 130 is disposed on Bragg mirror 120. The electrode 130 extends on the left-hand side beyond the portion depicted in FIG. 1 to other circuit elements such as a bump contact to connect electrode 130 to other elements of the electronic circuit. A piezoelectric layer 140 is disposed on the Bragg mirror 120 and on the bottom electrode 130. Piezoelectric layer 140 may be made of aluminum scandium nitride having 7 wt % of scandium in the present example. Other piezoelectric materials such as aluminum scandium nitride with an arbitrary scandium portion or aluminum nitride or another piezoelectric material are also possible.

[0030] A dielectric flap layer such as a silicon dioxide layer 150 is disposed on the top surface of the piezoelectric layer 140. The silicon dioxide flap layer 150 is structured by masking and lithography steps to form a portion in which the silicon dioxide layer 150 is removed that is opposite the bottom electrode 130 and accommodates the top electrode 170. Silicon dioxide layer 150 surrounds and encloses the removed portion in which top electrode 170 is disposed. The thickness of the silicon dioxide flap layer may be in the range of 140 nm, for example, for a resonator for a band 25 filter. In a resonator for a filter according to the 5G standard, the thickness may be lower, for example, down to 20 nm.

[0031] It is to be noted that silicon dioxide flap layer 150 is disposed directly on piezoelectric layer 140. Silicon dioxide layer 150 has a bottom surface that is adjacent and opposite the top surface of piezoelectric layer 140. Layers 150, 140 have one common contact surface so that no additional layer is disposed between silicon dioxide layer 150 and piezoelectric layer 140. Silicon dioxide layer 150 is in direct mechanical contact with the top surface of the piezoelectric layer 140.

[0032] An overlap layer 160, which is made of a metal or a stack of metal layers, is disposed on silicon dioxide layer 150 and extends into the acoustically active area where a portion of silicon dioxide 150 is removed. Overlap layer 160 may comprise a bottom layer of titanium and a top layer of tungsten. Overlap 160 extends over the vertical sidewall of silicon dioxide layer 150 and contacts the top surface of piezoelectric layer 140. The overlap layer 160 is removed from an inner portion of the acoustically active area to allow contact between top electrode 170 and piezoelectric layer 140. Specifically, the top tungsten layer of overlap 160 may be removed, wherein the bottom titanium layer of overlap 160 may be still present as a seed layer in the acoustically active area to enable proper forming of top electrode 170 within the active area on piezoelectric layer 140.

[0033] The silicon dioxide layer 150 may be called a flap layer that covers the top surface of the piezoelectric layer except the portions where an electrode contacts the piezoelectric layer 140 such as the top electrode 170 in the acoustically active area. The acoustically active area is formed in the overlap region of bottom electrode 130 and top electrode 170. By application of an electrical RF signal to the electrodes 130, 170, an acoustic resonating wave is generated within the piezoelectric layer 140 between the electrodes 130, 170. The flap layer 150 generates a step feature at its vertical sidewall which has the function of an energy confinement ring surrounding the acoustically active area so that the acoustic energy concentrated in the acoustically active area is prevented from laterally escaping therefrom into the regions of the piezoelectric substrate 140 outside of the acoustically active area and outside of the removed portion of flap layer 150.

[0034] During manufacturing of the BAW resonator depicted in FIG. 1, carrier substrate 110 and acoustic mirror 120 disposed thereon are provided, exposing the top dielectric layer 125 of the Bragg mirror arrangement 120. The bottom electrode layer 130 is deposited on the top layer 125 of the Bragg mirror and structured to form the bottom electrode of the acoustically active area. Then, a piezoelectric layer 140 such as an aluminum scandium nitride layer with 7 wt % of scandium is deposited. According to an embodiment, the workpiece may be transferred under vacuum conditions to another deposition chamber for silicon dioxide deposition and the process is continued with the PVD deposition of the silicon dioxide layer 150. During the PVD process, a silicon target is bombarded by argon ions under an oxygen atmosphere so that deposition of silicon dioxide with a thickness of about 140 nm takes place on the surface of the piezoelectric layer 140. No additional layer is generated between piezoelectric layer 140 and silicon dioxide layer 150 during the in-situ deposition of both layers. Then, the silicon dioxide layer 150 is structured in that the portion of said layer opposite the bottom electrode 130 is removed to generate flap layer 150 that forms an energy confinement ring feature for the acoustic resonating wave. An overlap layer 160 is deposited, wherein at least a portion of overlapping layer 160 is removed within a portion of the active area. A top electrode layer 170 is deposited opposite the bottom electrode 130 to form the active area in the overlapping region of bottom and top electrodes 130, 170. The overlap layer 160 may slightly extend from the top surface of the silicon dioxide flap layer 150 along a defined amount of length into the active area underneath top electrode 170.

[0035] The etching of the silicon dioxide layer 150 to generate the flap structures may be performed through a dry etching process with suitable agents to dry etch silicon dioxide such as the gases CF .sub.4, CHF .sub.4, Ar, O.sub.2. Etching is performed in a region opposite the bottom electrode 130. The etch process continues until the piezoelectric substrate is reached and the piezoelectric substrate is used as an etch stop. The detection of reaction gases from the piezoelectric layer such as aluminum fluoride AlF2 may serve as a detection means to stop the etching.

[0036] The PVD sputtering process to deposit the silicon dioxide layer 150 may, in an exemplary process, use the following parameters:

[0037] Temperature of the substrate: 100° C.

[0038] Target power: 2.25 kW

[0039] Oxygen flow: 100 SCCM

[0040] Argon flow: 20 SCCM

[0041] Chamber pressure: 6.7 to 6.9 10-3 Torr (0.89 Pa to 0.92 Pa).

[0042] Platen RF forward power: 325 W

[0043] The PVD deposition of the flap layer 150 directly on the piezoelectric layer 140 without intervening seed layer achieves a resonator of increased quality factor. A RF filter including several of said resonators has increased performance as explained below.

[0044] FIG. 2 depicts the schematic diagram of a RF filter. The RF filter comprises a first and a second input/output port 201, 202 between which four series resonators 210, 211, 212, 213 are serially connected. The node between resonators 210, 211 is coupled to a shunt path that includes resonator 214. Resonator 214 is connected between node 221 and terminal 222 for ground potential. Other shunt paths each including a resonator 215, 216, 217 are provided between corresponding nodes of serial resonators and ground potential. The filter topology depicted in FIG. 2 is commonly known as ladder type filter. All resonators 210, . . . , 217 have the structure depicted in FIG. 1 with a flap layer 150 disposed directly on piezoelectric layer 140. According to ladder type circuit concepts, the resonators 210, . . . , 217 may have different resonance frequencies. Three different resonance frequencies are useful for the resonators of the ladder type filter of FIG. 2.

[0045] The filter of FIG. 2 may be dimensioned such that it forms a passband for band 25 as depicted in FIG. 3. The uplink (Tx) passband of band 25 has a lower edge 310 at 1.85 GHz and an upper edge 302 at 1.915 GHz. The diagram in FIG. 3 shows a variety of transmission curves 310 from RF filters with comparative resonators which exhibit a 5 nm thick titanium seed layer between the piezoelectric layer and the 140 nm thick CVD deposited silicon oxide flap layer and a variety of transmission curves 320 from RF filters with BAW resonators according to the principles of the present disclosure described in connection with FIG. 1 which include a 140 nm thick PVD-deposited silicon dioxide layer without seed layer. The curves depicted in FIG. 3 are based on actual measurements from RF filters with resonators disposed on wafers from the same manufacturing lot. The different curves may result from natural non-uniformity variations across the wafer.

[0046] As can be clearly gathered from FIG. 3, the RF filter with BAW resonators according to principles of the present disclosure shows transmission curves 320 disposed above the transmission curves 310 according to a comparative RF filter. The transmission curves 320 exhibit a higher transmission and lower attenuation than the comparative transmission curves 310. Specifically, the variety of curves 320 shows an improvement of about 0.1 dB in the area 331 at the lower edge of the passband which is an improvement of about 5%. The improvement at the upper passband edge at area 332 is about 0.3 dB which is an improvement of around 10%. The improvement in the center region is about 0.1 dB which equals about 5% improvement.

[0047] It will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit or scope of the disclosure as laid down in the appended claims. Since modifications, combinations, sub-combinations and variations of the disclosed embodiments incorporating the spirit and substance of the disclosure may occur to the persons skilled in the art, the disclosure should be construed to include everything within the scope of the appended claims.