Light emitting filament device and method of manufacturing a light emitting filament device

Abstract

A light emitting filament device comprising a carrier extending in a longitudinal direction and having a first main surface, a second main surface opposite to the first main surface, and two side surfaces interconnecting the two main surfaces. Optoelectronic components are disposed on the first main surface of the carrier. A first converter layer is arranged on the first main surface of the carrier and covers the optoelectronic components. A second converter layer is arranged on the second main surface of the carrier. The carrier is designed at at least one location along the longitudinal direction such that at least one of the two side surfaces includes an angle with the first main surface of greater than 90°. The carrier is trapezoidal in cross-section at the at least one location.

Claims

1. A light emitting filament device, comprising: a carrier extending in a longitudinal direction and having a first main surface, a second main surface opposite the first main surface, and two side surfaces interconnecting the two main surfaces, optoelectronic components arranged on the first main surface of the carrier, a first converter layer disposed on the first main surface of the carrier and covering the optoelectronic components, a second converter layer disposed on the second main surface of the carrier, wherein the carrier is configured in at least one location along the longitudinal direction such that at least one of the two side surfaces includes an angle with the first main surface of greater than 90°, and wherein the carrier is trapezoidal in cross-section at the at least one location.

2. The light emitting filament device of claim 1, wherein an outer side of the at least one of the two side surfaces is at least partially exposed at the at least one location.

3. The light emitting filament device of claim 1, wherein the at least one of the two side surfaces at the at least one location includes an angle with the first main surface in a range of 120° to 150°.

4. The light emitting filament device according to claim 1, wherein the carrier is designed at the at least one location such that both side surfaces each include an angle with the first main surface of greater than 90°.

5. The light emitting filament device according to claim 1, wherein the first converter layer completely covers the first main surface of the carrier at the at least one location and/or the second converter layer completely covers the second main surface of the carrier at the at least one location.

6. The light emitting filament device according to claim 1, wherein the carrier is made of a material having a refractive index lower than 1.7.

7. The light emitting filament device according to claim 1, wherein the carrier is made of glass or a plastic.

8. The light emitting filament device according to claim 1, wherein the optoelectronic components are adapted to generate blue light.

9. The light emitting filament device according to claim 1, wherein the first converter layer and/or the second converter layer comprises phosphor.

10. A lighting device comprising one or more light emitting filament devices according to claim 1.

11. A license plate lighting device for a motor vehicle comprising one or more light emitting filament devices according to claim 1.

12. A method of manufacturing a light emitting filament device, comprising the steps of: providing a carrier which extends in a longitudinal direction and which has a first main surface, a second main surface opposite the first main surface, and two side surfaces interconnecting the two main surfaces, wherein the carrier at at least one location along the longitudinal direction is designed such that at least one of the two side surfaces includes an angle with the first main surface of greater than 90°, and wherein the carrier at the at least one location is trapezoidal in cross-section, arranging optoelectronic components on the first main surface of the carrier, applying a first converter layer on the first main surface of the carrier and the optoelectronic components, applying a second converter layer to the second main surface of the carrier.

13. The method of claim 12, wherein an outer side of the at least one of the two side surfaces remains at least partially exposed at the at least one location.

14. The method of claim 12, wherein the at least one of the two side surfaces at the at least one location includes an angle with the first main surface in a range of 120° to 150°.

Description

(1) In the following, embodiments of the invention are explained in more detail with reference to the accompanying drawings. In these schematically show:

(2) FIG. 1A An illustration of an embodiment of a light emitting filament device not according to the invention;

(3) FIG. 1B illustration of the color homogeneity of the light emitting filament device shown in FIG. 1A;

(4) FIG. 2A representation of another embodiment of a light emitting filament device not according to the invention;

(5) FIG. 2B illustration of the color homogeneity of the light emitting filament device shown in FIG. 2A;

(6) FIG. 3A representation of an embodiment of a light emitting filament device according to the invention in a cross-section along the extension of the light emitting filament device in a longitudinal direction;

(7) FIG. 3B illustration of the light emitting filaperpendicular to the longitudinal direction;

(8) FIG. 3C illustration of the color homogeneity of the light emitting filament device shown in FIGS. 3A and 3B; and

(9) FIG. 4 illustration of an embodiment of a method for manufacturing a light emitting filament device according to the invention.

(10) In the following detailed description, reference is made to the accompanying drawings, which form a part of this description and in which specific embodiments in which the invention may be practiced are shown for illustrative purposes. Since components of embodiments may be positioned in a number of different orientations, the directional terminology is for illustrative purposes and is not limiting in any way. It is understood that other embodiments may be used and structural or logical changes may be made without departing from the scope of protection. It is understood that the features of the various embodiments described herein may be combined with each other, unless specifically indicated otherwise. Therefore, the following detailed description is not to be construed in a limiting sense. In the figures, identical or similar elements are provided with identical reference signs where appropriate.

(11) FIG. 1A schematically shows a light emitting filament device 10 in a cross-section perpendicular to the longitudinal extent of the light emitting filament device 10.

(12) The light emitting filament device 10 includes a carrier 11 and a plurality of LED semiconductor chips 12 disposed on the top surface of the carrier 11. In FIG. 1A, one of the LED semiconductor chips 12 is shown. A first converter layer 13 and a second converter layer 14 are further provided on the top and bottom surfaces of the carrier 11, respectively.

(13) The carrier 11 is made of glass with a refractive index of 1.5 and has a rectangular cross-section. The LED semiconductor chips 12 generate blue light. Ideally, the blue light generated by the LED semiconductor chips 12 should pass through at least one of the converter layers 13, 14 so that the blue light can be converted into white light.

(14) However, the case may arise where light emitted by the LED semiconductor chips 12 emerges laterally directly from the carrier 11 without having passed through one of the converter layers 13, 14 or with only a very short path through the converter layer 13. In this case, the refractive index difference between glass (n=1.5) and air (n=1) is not sufficient to reflect the direct blue light at the interface of glass and air. As an example, such a light beam 16, which does not experience total reflection at the interface of glass and air, is shown in FIG. 1A.

(15) In FIG. 1B, the color of the light emitted from the light emitting filament device 10 is plotted in units of CIE-x against an angle indicating a radial position around the cross-section of the filament device 10 shown in FIG. 1A. It can be seen from FIG. 1B that there are two regions 17, 18 in which the color homogeneity is low because in these regions the light generated by the LED semiconductor chips 12 exits directly through the side surfaces of the carrier 11, and consequently the light spectrum in these regions contains a very high proportion of blue light.

(16) FIG. 2A schematically shows a light emitting filament device 19 in a cross-section perpendicular to the longitudinal extension of the light emitting filament device 19. The light emitting filament device 19 is in large parts identical to the light emitting filament device 10 shown in FIG. 1A. The only difference is that in the light emitting filament device 19 the carrier 11 is not made of glass, but of a material with a higher refractive index, for example a refractive index of 1.75. Such a refractive index can be achieved with an Al.sub.2O.sub.3 ceramic or sapphire.

(17) The higher refractive index difference at the interface between the carrier 11 and the air surrounding the light emitting filament device 19 ensures total reflection taking place at the interface. This is shown by way of example using the light beam 16.

(18) Consequently, only a small amount of blue light leaves the light emitting filament device 19, which increases the color homogeneity of the light emitted from the light emitting filament device 19, as can be seen in FIG. 2B.

(19) FIG. 3A schematically shows a light emitting filament device 20 as an example embodiment according to the invention. The light emitting filament device 20 has a carrier 21, a plurality of optoelectronic components in the form of LED semiconductor chips 22, a first converter layer 23 and a second converter layer 24.

(20) The carrier 21 extends in a longitudinal direction 25 shown in FIG. 3A. The LED semiconductor chips 22 are mounted on the carrier 21 with a distance in the longitudinal direction 25 between adjacent LED semiconductor chips 22. For example, the distance between each adjacent LED semiconductor chip 22 may be equal.

(21) FIG. 3B shows the cross-section of the light emitting filament device 20 at a location 26 shown in FIG. 3A along the longitudinal direction 25. The cross-section shown in FIG. 3B extends perpendicular to the longitudinal direction 25.

(22) The carrier 21 has a first main surface 31, a second main surface 32 opposite the first main surface 31, and two side surfaces 33, 34 connecting the two main surfaces 31, 32. The LED semiconductor chips 22 are mounted on the first main surface 31 of the carrier 21.

(23) The carrier 21 is made of glass or other transparent material having, for example, a refractive index less than 1.7.

(24) The LED semiconductor chips 22 emit blue light. The first and second converter layers 23, 24 contain phosphor particles as conversion material in a silicone matrix.

(25) The first converter layer 23 is applied to the first main surface 31 of the carrier 21 and covers the first main surface 31 and the semiconductor chips 22. At the location 26 and also at other locations along the longitudinal direction 25, the first converter layer 23 completely covers the first main surface 31 of the carrier 21, i.e., the first converter layer 23 extends from an outer edge of the first main surface 31 to the opposite outer edge of the first main surface 31. The side surfaces 33 and 34, respectively, abut the outer edges of the first main surface 31.

(26) The second converter layer 24 is applied to the second main surface 32 of the carrier 21 and covers the second main surface 32. At the location 26 and also at further locations along the longitudinal direction 25, the second converter layer 24 completely covers the second main surface 32 of the carrier 21, i.e., the second converter layer 24 extends from an outer edge of the second main surface 32 to the opposite outer edge of the second main surface 32. The side surfaces 33 and 34, respectively, abut the outer edges of the second main surface 32.

(27) The first and second converter layers 23, 24 each have the shape of a segment of a circle in cross-section, but they can also be of other shapes.

(28) The two side surfaces 33, 34 of the carrier are exposed and not covered with converter material.

(29) As can be seen from FIG. 3B, the cross-section of the carrier 21 is trapezoidal at the location 26 perpendicular to the longitudinal direction 25. The two main surfaces 31, 32 are parallel to each other, the second main surface 32 being wider than the first main surface 31.

(30) The side surface 33 includes an angle α.sub.1 with the first main surface 31. The side surface 34 includes an angle α.sub.2 with the first main surface 31. The angles α.sub.1 and α.sub.2 are each measured from the inside of the first main surface 31 to the inside of the respective side surface 33 and 34. Both angles α.sub.1 and α.sub.2 are each greater than 90°, which means that the side surfaces 33 and 34 are not oriented perpendicular to the first main surface 31 as in FIGS. 1A and 2A, but comprise a slope.

(31) In particular, the angles α.sub.1 and α.sub.2 are each in a range of 120° to 150°. Furthermore, the angles α.sub.1 and α.sub.2 in the embodiment example shown in FIGS. 3A and 3B are the same size. It is also possible to make the two angles α.sub.1 and α.sub.2 different sizes.

(32) The carrier 21 can be configured at further locations along the longitudinal direction 25 as described above and shown schematically in FIG. 3B. In particular, the carrier 21 can comprise the described embodiment over a contiguous region.

(33) The embodiment of the carrier 21 shown in FIG. 3B is advantageous in that light emitted from the LED semiconductor chip 22 directly toward one of the side surfaces 33, 34 falls on the respective side surface 33, 34 at an angle favorable for total internal reflection.

(34) Total internal reflection can occur at the interface between the carrier 21 and the ambient atmosphere when the angle of incidence exceeds a certain value, called the critical angle of total internal reflection. The angle of incidence is measured against the surface normal. For a glass/air interface, the critical angle of total internal reflection is approximately 42°.

(35) FIG. 3B illustrates an example of a light beam 35 that extends from the LED semiconductor chip 22 directly to the side surface 34 of the carrier 21 and impinges on the side surface 34 at an angle of incidence p that is greater than 42°. Accordingly, a total reflection takes place at the side surface 34 so that the light beam 35 is reflected from the inner side of the side surface 34 toward the second converter layer 24.

(36) The total reflection taking place on the inner sides of the side surfaces 33, 34 causes only a small amount of blue light to emerge through the side surfaces 33, 34 of the carrier 21. As can be seen from FIG. 3C, this significantly increases the color homogeneity of the light emitted from the light emitting filament device 20, even though the carrier 21 is made of glass or other material having a comparatively low refractive index.

(37) Glass is cheaper to produce than a ceramic or sapphire with a higher refractive index. In addition, glass is easier to process because it is not as hard as sapphire and a glass panel is easier to separate into individual substrates.

(38) In particular, the light emitting filament device 20 can be used in lighting devices or license plate lighting devices for motor vehicles.

(39) The limiting angle α.sub.min for angles α.sub.1 and α.sub.2, above which total internal reflection occurs, depends on the refractive index n.sub.1 of the material of the carrier. In the case that the surrounding medium has a refractive index of n.sub.2=1.0, such as air, the limiting angles β.sub.min and α.sub.min for angle β and angles α.sub.1 and α.sub.2, respectively, are as follows:

(40) TABLE-US-00001 n.sub.1 β.sub.min α.sub.min 1.1 65 155 1.2 56 146 1.3 50 140 1.4 46 136 1.5 42 132 1.6 39 129 1.7 36 126 1.8 34 124 1.9 32 122 2.0 30 120

(41) FIG. 4 schematically illustrates a method 40 for manufacturing the light emitting filament device 20 shown in FIGS. 3A and 3B.

(42) In a step 41, carrier 21 is manufactured. For example, the carrier 21 can be cut from a larger glass panel or the carrier 21 can be compression molded. The side surfaces 33, 34 of the carrier 21 preferably have a low roughness to allow total reflection. For example, the carrier 21 has a length of about 30 mm to about 45 mm. The width and thickness of the carrier 21 may be, for example, about 2 mm and about 0.9 mm, respectively. The carrier 21 may further be provided with stainless steel end contacts at its ends.

(43) In a step 42, the LED semiconductor chips 22 are mounted on the first main surface 31 of the carrier 21.

(44) In a step 43, the LED semiconductor chips 22 are electrically connected to each other and to the end contacts with bonding wires.

(45) In a step 44, the first and second converter layers 23, 24 are applied to the carrier 21.

LIST OF REFERENCE SIGNS

(46) 10 light emitting filament device 11 carrier 12 LED semiconductor chip 13 first converter layer 14 second converter layer 16 light beam 17 region 18 region 19 light emitting filament device 20 light emitting filament device 21 carrier 22 LED semiconductor chip 23 first converter layer 24 second converter layer 25 longitudinal direction 26 location 31 first main surface 32 second main surface 33 side surface 34 side surface 35 light beam 40 method 41 Step 42 Step 43 Step 44 Step